TW276360B - - Google Patents

Info

Publication number
TW276360B
TW276360B TW084106074A TW84106074A TW276360B TW 276360 B TW276360 B TW 276360B TW 084106074 A TW084106074 A TW 084106074A TW 84106074 A TW84106074 A TW 84106074A TW 276360 B TW276360 B TW 276360B
Authority
TW
Taiwan
Application number
TW084106074A
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW276360B publication Critical patent/TW276360B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
TW084106074A 1994-05-31 1995-06-14 TW276360B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6119074A JPH07326192A (ja) 1994-05-31 1994-05-31 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW276360B true TW276360B (zh) 1996-05-21

Family

ID=14752242

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084106074A TW276360B (zh) 1994-05-31 1995-06-14

Country Status (4)

Country Link
US (1) US5757707A (zh)
JP (1) JPH07326192A (zh)
KR (1) KR100207970B1 (zh)
TW (1) TW276360B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3085241B2 (ja) * 1997-04-11 2000-09-04 日本電気株式会社 半導体記憶装置
JPH10308100A (ja) * 1997-05-06 1998-11-17 Mitsubishi Electric Corp 半導体記憶装置
JP4226686B2 (ja) * 1998-05-07 2009-02-18 株式会社東芝 半導体メモリシステム及び半導体メモリのアクセス制御方法及び半導体メモリ
US6275435B1 (en) 1999-03-31 2001-08-14 Vanguard International Semiconductor Corp. Bi-directional sense amplifier stage for memory datapath
US6115308A (en) * 1999-06-17 2000-09-05 International Business Machines Corporation Sense amplifier and method of using the same with pipelined read, restore and write operations
KR20030037263A (ko) * 2000-07-07 2003-05-12 모사이드 테크놀로지스 인코포레이티드 한 쌍의 신호라인 사이에서 신호 등화를 가속화하는 방법및 장치
JP5262706B2 (ja) * 2008-12-26 2013-08-14 富士通セミコンダクター株式会社 半導体集積回路，データ転送システムおよびデータ転送方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0646513B2 (ja) * 1989-07-12 1994-06-15 株式会社東芝 半導体記憶装置のデータ読出回路
DE69122293T2 (de) * 1990-04-27 1997-04-24 Nec Corp Halbleiterspeicheranordnung
JPH04186593A (ja) * 1990-11-21 1992-07-03 Mitsubishi Electric Corp 半導体記憶装置
JP2672721B2 (ja) * 1991-05-27 1997-11-05 株式会社東芝 センスアンプ回路
JP2876830B2 (ja) * 1991-06-27 1999-03-31 日本電気株式会社 半導体記憶装置
JPH0612604A (ja) * 1992-06-29 1994-01-21 Matsushita Electric Ind Co Ltd 磁界発生装置

Also Published As

Publication number Publication date
KR100207970B1 (ko) 1999-07-15
JPH07326192A (ja) 1995-12-12
US5757707A (en) 1998-05-26
KR950034793A (ko) 1995-12-28

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