TW272316B - - Google Patents

Info

Publication number
TW272316B
TW272316B TW084102170A TW84102170A TW272316B TW 272316 B TW272316 B TW 272316B TW 084102170 A TW084102170 A TW 084102170A TW 84102170 A TW84102170 A TW 84102170A TW 272316 B TW272316 B TW 272316B
Authority
TW
Taiwan
Application number
TW084102170A
Original Assignee
Hitachi Seisakusyo Kk
Hitachi Cho Lsi Eng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Seisakusyo Kk, Hitachi Cho Lsi Eng Co Ltd filed Critical Hitachi Seisakusyo Kk
Application granted granted Critical
Publication of TW272316B publication Critical patent/TW272316B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
TW084102170A 1994-03-25 1995-03-06 TW272316B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6055812A JPH07263576A (ja) 1994-03-25 1994-03-25 半導体集積回路装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW272316B true TW272316B (zh) 1996-03-11

Family

ID=13009350

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084102170A TW272316B (zh) 1994-03-25 1995-03-06

Country Status (5)

Country Link
US (1) US5661061A (zh)
JP (1) JPH07263576A (zh)
KR (1) KR0144587B1 (zh)
CN (1) CN1124407A (zh)
TW (1) TW272316B (zh)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6969671B2 (en) * 1995-11-14 2005-11-29 Renesas Technology Corporation Semiconductor integrated device and method of fabrication thereof
JP3443219B2 (ja) 1995-11-14 2003-09-02 株式会社日立製作所 半導体集積回路装置およびその製造方法
JP2809185B2 (ja) * 1996-03-29 1998-10-08 日本電気株式会社 半導体装置およびその製造方法
US5888863A (en) * 1996-05-16 1999-03-30 Vanguard International Semiconductor Corporation Method to fabricate capacitors in memory circuits
TW412862B (en) * 1997-06-30 2000-11-21 Hitachi Ltd Method for fabricating semiconductor integrated circuit device
US7098502B2 (en) * 2003-11-10 2006-08-29 Freescale Semiconductor, Inc. Transistor having three electrically isolated electrodes and method of formation
US7604908B2 (en) * 2005-03-09 2009-10-20 Tokyo Electron Limited Fine pattern forming method
JP2006344635A (ja) * 2005-06-07 2006-12-21 Matsushita Electric Ind Co Ltd 評価用半導体装置
US20090306027A1 (en) * 2006-04-10 2009-12-10 Nitomed, Inc. Genetic risk assessment in heart failure: impact of the genetic variation of g-protein beta 3 subunit polymorphism
US9190494B2 (en) * 2008-02-19 2015-11-17 Micron Technology, Inc. Systems and devices including fin field-effect transistors each having U-shaped semiconductor fin
US7742324B2 (en) * 2008-02-19 2010-06-22 Micron Technology, Inc. Systems and devices including local data lines and methods of using, making, and operating the same
US8866254B2 (en) * 2008-02-19 2014-10-21 Micron Technology, Inc. Devices including fin transistors robust to gate shorts and methods of making the same
US7915659B2 (en) * 2008-03-06 2011-03-29 Micron Technology, Inc. Devices with cavity-defined gates and methods of making the same
US7808042B2 (en) 2008-03-20 2010-10-05 Micron Technology, Inc. Systems and devices including multi-gate transistors and methods of using, making, and operating the same
US8546876B2 (en) * 2008-03-20 2013-10-01 Micron Technology, Inc. Systems and devices including multi-transistor cells and methods of using, making, and operating the same
US7898857B2 (en) 2008-03-20 2011-03-01 Micron Technology, Inc. Memory structure having volatile and non-volatile memory portions
US7969776B2 (en) * 2008-04-03 2011-06-28 Micron Technology, Inc. Data cells with drivers and methods of making and operating the same
US8076229B2 (en) * 2008-05-30 2011-12-13 Micron Technology, Inc. Methods of forming data cells and connections to data cells
US8148776B2 (en) 2008-09-15 2012-04-03 Micron Technology, Inc. Transistor with a passive gate
US8294511B2 (en) 2010-11-19 2012-10-23 Micron Technology, Inc. Vertically stacked fin transistors and methods of fabricating and operating the same
WO2016137985A1 (en) 2015-02-26 2016-09-01 Merck Patent Gmbh Pd-1 / pd-l1 inhibitors for the treatment of cancer
MX2017016324A (es) 2015-06-16 2018-03-02 Merck Patent Gmbh Tratamientos de combinacion de antagonista de ligando 1 de muerte programada (pd-l1).
AU2017339856A1 (en) 2016-10-06 2019-05-23 Merck Patent Gmbh Dosing regimen of avelumab for the treatment of cancer
JP2018146278A (ja) * 2017-03-02 2018-09-20 セイコーエプソン株式会社 圧力センサー、圧力センサーの製造方法、圧力センサーモジュール、電子機器および移動体
JP2018151310A (ja) * 2017-03-14 2018-09-27 セイコーエプソン株式会社 圧力センサー、圧力センサーの製造方法、圧力センサーモジュール、電子機器および移動体
US10622030B1 (en) * 2018-10-28 2020-04-14 Nanya Technology Corporation Memory structure with non-straight word line

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3123073B2 (ja) * 1990-11-08 2001-01-09 日本電気株式会社 半導体記憶装置の製造方法
KR920017248A (ko) * 1991-02-18 1992-09-26 문정환 반도체 메모리 소자의 커패시터 제조방법
KR100215338B1 (ko) * 1991-03-06 1999-08-16 가나이 쓰도무 반도체 장치의 제조방법

Also Published As

Publication number Publication date
CN1124407A (zh) 1996-06-12
JPH07263576A (ja) 1995-10-13
KR950034789A (ko) 1995-12-28
US5661061A (en) 1997-08-26
KR0144587B1 (ko) 1998-07-15

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