TW265475B - - Google Patents

Info

Publication number
TW265475B
TW265475B TW084100181A TW84100181A TW265475B TW 265475 B TW265475 B TW 265475B TW 084100181 A TW084100181 A TW 084100181A TW 84100181 A TW84100181 A TW 84100181A TW 265475 B TW265475 B TW 265475B
Authority
TW
Taiwan
Application number
TW084100181A
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW265475B publication Critical patent/TW265475B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW084100181A 1994-04-29 1995-01-10 TW265475B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/236,752 US5411905A (en) 1994-04-29 1994-04-29 Method of making trench EEPROM structure on SOI with dual channels

Publications (1)

Publication Number Publication Date
TW265475B true TW265475B (zh) 1995-12-11

Family

ID=22890804

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084100181A TW265475B (zh) 1994-04-29 1995-01-10

Country Status (5)

Country Link
US (1) US5411905A (zh)
JP (1) JP2921653B2 (zh)
KR (1) KR0167467B1 (zh)
DE (1) DE19511846C2 (zh)
TW (1) TW265475B (zh)

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JP3403877B2 (ja) * 1995-10-25 2003-05-06 三菱電機株式会社 半導体記憶装置とその製造方法
US5886376A (en) * 1996-07-01 1999-03-23 International Business Machines Corporation EEPROM having coplanar on-insulator FET and control gate
US6166409A (en) 1996-09-13 2000-12-26 Alliance Semiconductor Corporation Flash EPROM memory cell having increased capacitive coupling
US6008112A (en) * 1998-01-08 1999-12-28 International Business Machines Corporation Method for planarized self-aligned floating gate to isolation
US6040605A (en) * 1998-01-28 2000-03-21 Hitachi, Ltd. Semiconductor memory device
JPH11214640A (ja) * 1998-01-28 1999-08-06 Hitachi Ltd 半導体記憶素子、半導体記憶装置とその制御方法
US6319774B1 (en) * 1998-02-27 2001-11-20 Micron Technology, Inc. Method for forming a memory cell
US6611020B2 (en) 1998-08-17 2003-08-26 Micron Technology, Inc. Memory cell structure
US6252275B1 (en) 1999-01-07 2001-06-26 International Business Machines Corporation Silicon-on-insulator non-volatile random access memory device
TW444402B (en) * 1999-03-11 2001-07-01 Mosel Vitelic Inc Flash memory cell and its manufacturing method
US6690056B1 (en) 1999-04-06 2004-02-10 Peregrine Semiconductor Corporation EEPROM cell on SOI
US6667506B1 (en) 1999-04-06 2003-12-23 Peregrine Semiconductor Corporation Variable capacitor with programmability
US6151248A (en) * 1999-06-30 2000-11-21 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
US6091633A (en) * 1999-08-09 2000-07-18 Sandisk Corporation Memory array architecture utilizing global bit lines shared by multiple cells
US6316298B1 (en) * 1999-10-22 2001-11-13 United Microelectronics Corp. Fabrication method for a flash memory device
US6512263B1 (en) 2000-09-22 2003-01-28 Sandisk Corporation Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
US6406962B1 (en) 2001-01-17 2002-06-18 International Business Machines Corporation Vertical trench-formed dual-gate FET device structure and method for creation
DE10117037A1 (de) * 2001-04-05 2002-10-17 Infineon Technologies Ag Speicherzellenarray mit einzeln adressierbaren Speicherzellen und Verfahren zur Herstellung desselben
US6894343B2 (en) * 2001-05-18 2005-05-17 Sandisk Corporation Floating gate memory cells utilizing substrate trenches to scale down their size
US6936887B2 (en) 2001-05-18 2005-08-30 Sandisk Corporation Non-volatile memory cells utilizing substrate trenches
JP4809545B2 (ja) * 2001-05-31 2011-11-09 株式会社半導体エネルギー研究所 半導体不揮発性メモリ及び電子機器
KR100426488B1 (ko) * 2001-12-29 2004-04-14 주식회사 하이닉스반도체 플래시 메모리 셀과 그 제조 방법 및 프로그램/소거/독출방법
DE10220922B4 (de) * 2002-05-10 2006-09-28 Infineon Technologies Ag Flash-Speicherzelle, Anordnung von Flash-Speicherzellen und Verfahren zur Herstellung von Flash-Speicherzellen
DE10220923B4 (de) * 2002-05-10 2006-10-26 Infineon Technologies Ag Verfahren zur Herstellung eines nicht-flüchtigen Flash-Halbleiterspeichers
DE10241171A1 (de) * 2002-09-05 2004-03-18 Infineon Technologies Ag Wort- und Bitleitungsanordnung für einen FINFET-Halbleiterspeicher
DE10241170A1 (de) * 2002-09-05 2004-03-18 Infineon Technologies Ag Hochdichter NROM-FINFET
KR100474850B1 (ko) * 2002-11-15 2005-03-11 삼성전자주식회사 수직 채널을 가지는 비휘발성 ｓｏｎｏｓ 메모리 및 그 제조방법
US7196372B1 (en) * 2003-07-08 2007-03-27 Spansion Llc Flash memory device
US6958939B2 (en) * 2003-09-15 2005-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Flash memory cell having multi-program channels
KR20060103455A (ko) * 2003-12-19 2006-09-29 인피니언 테크놀로지스 아게 핀 전계 효과 트랜지스터 메모리 셀, 핀 전계 효과트랜지스터 메모리 셀 장치 및 핀 전계 효과 트랜지스터메모리 셀 제조 방법
US6958512B1 (en) 2004-02-03 2005-10-25 Advanced Micro Devices, Inc. Non-volatile memory device
US7518179B2 (en) * 2004-10-08 2009-04-14 Freescale Semiconductor, Inc. Virtual ground memory array and method therefor
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
US7262997B2 (en) * 2005-07-25 2007-08-28 Freescale Semiconductor, Inc. Process for operating an electronic device including a memory array and conductive lines
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7619270B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
EP1932171B1 (en) * 2005-09-28 2011-11-16 Nxp B.V. Finfet-based non-volatile memory device
US7560334B2 (en) * 2005-10-20 2009-07-14 Atmel Corporation Method and system for incorporating high voltage devices in an EEPROM
US7859026B2 (en) 2006-03-16 2010-12-28 Spansion Llc Vertical semiconductor device
US7592224B2 (en) 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
KR101427362B1 (ko) * 2006-09-19 2014-08-07 샌디스크 테크놀로지스, 인코포레이티드 기판 트렌치에 스페이서로 형성된 플로팅 게이트를 구비하는 비휘발성 메모리 셀의 어레이
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US7651916B2 (en) * 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
KR20090017041A (ko) * 2007-08-13 2009-02-18 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
US7847338B2 (en) * 2007-10-24 2010-12-07 Yuniarto Widjaja Semiconductor memory having both volatile and non-volatile functionality and method of operating
JP2009135214A (ja) * 2007-11-29 2009-06-18 Toshiba Corp 半導体記憶装置およびその製造方法
CN101582454B (zh) * 2008-05-16 2011-03-16 南亚科技股份有限公司 双位u型存储器结构及其制作方法
US8750037B2 (en) * 2009-06-16 2014-06-10 Globalfoundries Singapore Pte. Ltd. Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof
KR101662276B1 (ko) * 2010-03-09 2016-10-04 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 프로그램 및 읽기 방법들
CN102339753B (zh) * 2010-07-16 2014-03-19 中国科学院微电子研究所 一种隧穿晶体管结构及其制造方法
CN102456403B (zh) * 2010-10-22 2014-11-12 北京大学 利用分裂槽栅快闪存储器实现四位存储的方法
US8999828B2 (en) * 2011-08-03 2015-04-07 Globalfoundries Singapore Pte. Ltd. Method and device for a split-gate flash memory with an extended word gate below a channel region
TWI597826B (zh) * 2016-01-27 2017-09-01 聯華電子股份有限公司 具內埋式單元之半導體元件及其製造方法
CN109326595B (zh) 2017-07-31 2021-03-09 联华电子股份有限公司 半导体元件及其制作方法
JP6626070B2 (ja) * 2017-11-10 2019-12-25 矢崎総業株式会社 ワイヤハーネス
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Also Published As

Publication number Publication date
JP2921653B2 (ja) 1999-07-19
DE19511846A1 (de) 1995-11-02
KR0167467B1 (ko) 1999-01-15
JPH07302854A (ja) 1995-11-14
US5411905A (en) 1995-05-02
DE19511846C2 (de) 1997-09-18

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