TW265457B - - Google Patents

Info

Publication number
TW265457B
TW265457B TW084102817A TW84102817A TW265457B TW 265457 B TW265457 B TW 265457B TW 084102817 A TW084102817 A TW 084102817A TW 84102817 A TW84102817 A TW 84102817A TW 265457 B TW265457 B TW 265457B
Authority
TW
Taiwan
Application number
TW084102817A
Other languages
Chinese (zh)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW265457B publication Critical patent/TW265457B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW084102817A 1993-12-23 1995-03-23 TW265457B (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17339693A 1993-12-23 1993-12-23

Publications (1)

Publication Number Publication Date
TW265457B true TW265457B (en:Method) 1995-12-11

Family

ID=22631817

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084102817A TW265457B (en:Method) 1993-12-23 1995-03-23

Country Status (7)

Country Link
US (1) US5516721A (en:Method)
EP (1) EP0660390A3 (en:Method)
JP (1) JP2804446B2 (en:Method)
KR (1) KR0167813B1 (en:Method)
BR (1) BR9405158A (en:Method)
CA (1) CA2131668C (en:Method)
TW (1) TW265457B (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688669B (zh) * 2016-05-02 2020-03-21 日商東京威力科創股份有限公司 凹部之填埋方法

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US6429061B1 (en) * 2000-07-26 2002-08-06 International Business Machines Corporation Method to fabricate a strained Si CMOS structure using selective epitaxial deposition of Si after device isolation formation
US6613641B1 (en) * 2001-01-17 2003-09-02 International Business Machines Corporation Production of metal insulator metal (MIM) structures using anodizing process
US6605506B2 (en) * 2001-01-29 2003-08-12 Silicon-Based Technology Corp. Method of fabricating a scalable stacked-gate flash memory device and its high-density memory arrays
WO2002101818A2 (en) * 2001-06-08 2002-12-19 Amberwave Systems Corporation Method for isolating semiconductor devices
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US7060633B2 (en) * 2002-03-29 2006-06-13 Texas Instruments Incorporated Planarization for integrated circuits
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US6593221B1 (en) * 2002-08-13 2003-07-15 Micron Technology, Inc. Selective passivation of exposed silicon
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US6767786B1 (en) * 2003-04-14 2004-07-27 Nanya Technology Corporation Method for forming bottle trenches by liquid phase oxide deposition
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US7125815B2 (en) * 2003-07-07 2006-10-24 Micron Technology, Inc. Methods of forming a phosphorous doped silicon dioxide comprising layer
US7273794B2 (en) * 2003-12-11 2007-09-25 International Business Machines Corporation Shallow trench isolation fill by liquid phase deposition of SiO2
US7053010B2 (en) * 2004-03-22 2006-05-30 Micron Technology, Inc. Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells
US7074690B1 (en) * 2004-03-25 2006-07-11 Novellus Systems, Inc. Selective gap-fill process
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
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CN101452873B (zh) * 2007-12-06 2010-08-11 上海华虹Nec电子有限公司 浅沟槽隔离工艺方法
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US8105956B2 (en) * 2009-10-20 2012-01-31 Micron Technology, Inc. Methods of forming silicon oxides and methods of forming interlevel dielectrics
KR101758944B1 (ko) 2009-12-09 2017-07-18 노벨러스 시스템즈, 인코포레이티드 신규한 갭 충진 집적화
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CN103632961B (zh) * 2012-08-20 2016-08-10 上海华虹宏力半导体制造有限公司 功率mosfet芯片保护结构制造方法
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688669B (zh) * 2016-05-02 2020-03-21 日商東京威力科創股份有限公司 凹部之填埋方法

Also Published As

Publication number Publication date
CA2131668C (en) 1999-03-02
JPH07201979A (ja) 1995-08-04
BR9405158A (pt) 1995-08-01
US5516721A (en) 1996-05-14
CA2131668A1 (en) 1995-06-24
EP0660390A2 (en) 1995-06-28
JP2804446B2 (ja) 1998-09-24
EP0660390A3 (en) 1997-07-09
KR0167813B1 (ko) 1999-02-01
KR950021405A (ko) 1995-07-26

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