TW232076B - - Google Patents

Info

Publication number
TW232076B
TW232076B TW082109441A TW82109441A TW232076B TW 232076 B TW232076 B TW 232076B TW 082109441 A TW082109441 A TW 082109441A TW 82109441 A TW82109441 A TW 82109441A TW 232076 B TW232076 B TW 232076B
Authority
TW
Taiwan
Application number
TW082109441A
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of TW232076B publication Critical patent/TW232076B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond
TW082109441A 1993-02-01 1993-11-10 TW232076B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/011,595 US5619092A (en) 1993-02-01 1993-02-01 Enhanced electron emitter

Publications (1)

Publication Number Publication Date
TW232076B true TW232076B (zh) 1994-10-11

Family

ID=21751109

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082109441A TW232076B (zh) 1993-02-01 1993-11-10

Country Status (7)

Country Link
US (4) US5619092A (zh)
EP (1) EP0609532B1 (zh)
JP (1) JP3171290B2 (zh)
CN (1) CN1059050C (zh)
DE (1) DE69320617T2 (zh)
RU (1) RU94011577A (zh)
TW (1) TW232076B (zh)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5619092A (en) * 1993-02-01 1997-04-08 Motorola Enhanced electron emitter
CA2164294A1 (en) * 1993-06-02 1994-12-08 Nalin Kumar Amorphic diamond film flat field emission cathode
CN1134754A (zh) * 1993-11-04 1996-10-30 微电子及计算机技术公司 制作平板显示系统和元件的方法
US5578901A (en) * 1994-02-14 1996-11-26 E. I. Du Pont De Nemours And Company Diamond fiber field emitters
US5602439A (en) * 1994-02-14 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Diamond-graphite field emitters
US6246168B1 (en) 1994-08-29 2001-06-12 Canon Kabushiki Kaisha Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same
AU728397B2 (en) * 1994-08-29 2001-01-11 Canon Kabushiki Kaisha Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same
US5439753A (en) 1994-10-03 1995-08-08 Motorola, Inc. Electron emissive film
US5637950A (en) * 1994-10-31 1997-06-10 Lucent Technologies Inc. Field emission devices employing enhanced diamond field emitters
US5623180A (en) * 1994-10-31 1997-04-22 Lucent Technologies Inc. Electron field emitters comprising particles cooled with low voltage emitting material
KR100405886B1 (ko) * 1995-08-04 2004-04-03 프린터블 필드 에미터스 리미티드 전계전자방출물질과그제조방법및그물질을이용한소자
WO1997007522A1 (en) * 1995-08-14 1997-02-27 Sandia Corporation Method for creation of controlled field emission sites
US5982095A (en) * 1995-09-19 1999-11-09 Lucent Technologies Inc. Plasma displays having electrodes of low-electron affinity materials
JP3580930B2 (ja) * 1996-01-18 2004-10-27 住友電気工業株式会社 電子放出装置
KR100284272B1 (ko) * 1996-03-27 2001-04-02 모리시타 요이찌 전자방출소자 및 그 제조방법
JP3745844B2 (ja) * 1996-10-14 2006-02-15 浜松ホトニクス株式会社 電子管
US5973452A (en) * 1996-11-01 1999-10-26 Si Diamond Technology, Inc. Display
US6020677A (en) * 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
US6445114B1 (en) 1997-04-09 2002-09-03 Matsushita Electric Industrial Co., Ltd. Electron emitting device and method of manufacturing the same
US5869922A (en) * 1997-08-13 1999-02-09 Si Diamond Technology, Inc. Carbon film for field emission devices
DE19757141A1 (de) * 1997-12-20 1999-06-24 Philips Patentverwaltung Array aus Diamant/wasserstoffhaltigen Elektroden
KR100377284B1 (ko) 1998-02-09 2003-03-26 마쯔시다덴기산교 가부시키가이샤 전자 방출 소자 및 이의 제조 방법
FR2780808B1 (fr) * 1998-07-03 2001-08-10 Thomson Csf Dispositif a emission de champ et procedes de fabrication
US6181055B1 (en) 1998-10-12 2001-01-30 Extreme Devices, Inc. Multilayer carbon-based field emission electron device for high current density applications
US6441550B1 (en) 1998-10-12 2002-08-27 Extreme Devices Inc. Carbon-based field emission electron device for high current density applications
KR100311209B1 (ko) * 1998-10-29 2001-12-17 박종섭 전계방출표시소자의제조방법
DE19910156C2 (de) * 1999-02-26 2002-07-18 Hahn Meitner Inst Berlin Gmbh Elektronenemitter und Verfahren zu dessen Herstellung
US6059627A (en) * 1999-03-08 2000-05-09 Motorola, Inc. Method of providing uniform emission current
RU2155412C1 (ru) * 1999-07-13 2000-08-27 Закрытое акционерное общество "Патинор Коутингс Лимитед" Плоский люминесцентный экран, способ изготовления плоского люминесцентного экрана и способ получения изображения на плоском люминесцентном экране
FR2803944B1 (fr) * 2000-01-14 2002-06-14 Thomson Tubes Electroniques Cathode generatrice d'electrons et son procede de fabrication
DE10036889C1 (de) * 2000-07-28 2002-04-18 Infineon Technologies Ag Verfahren und Einrichtung zur Bestimmung eines in einem differentiellen Sendesignalabschnitt eines Funkgerätes auftretenden Offsetwerts
US6686696B2 (en) * 2001-03-08 2004-02-03 Genvac Aerospace Corporation Magnetron with diamond coated cathode
US6554673B2 (en) 2001-07-31 2003-04-29 The United States Of America As Represented By The Secretary Of The Navy Method of making electron emitters
US6577058B2 (en) 2001-10-12 2003-06-10 Hewlett-Packard Development Company, L.P. Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base
US6822380B2 (en) 2001-10-12 2004-11-23 Hewlett-Packard Development Company, L.P. Field-enhanced MIS/MIM electron emitters
US6847045B2 (en) 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
JP3647436B2 (ja) 2001-12-25 2005-05-11 キヤノン株式会社 電子放出素子、電子源、画像表示装置、及び電子放出素子の製造方法
US20070197732A1 (en) * 2003-07-11 2007-08-23 Tetranova Ltd. Cold cathodes made of carbon materials
US7327829B2 (en) * 2004-04-20 2008-02-05 Varian Medical Systems Technologies, Inc. Cathode assembly
TWI324024B (en) * 2005-01-14 2010-04-21 Hon Hai Prec Ind Co Ltd Field emission type light source
GB0620259D0 (en) * 2006-10-12 2006-11-22 Astex Therapeutics Ltd Pharmaceutical compounds
JP5450022B2 (ja) * 2009-12-11 2014-03-26 株式会社デンソー 熱電子発電素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
EP0713241B1 (en) * 1987-02-06 2001-09-19 Canon Kabushiki Kaisha A display device comprising an electron emission element
GB8818445D0 (en) * 1988-08-03 1988-09-07 Jones B L Stm probe
NL8802409A (nl) * 1988-09-30 1990-04-17 Philips Nv Weergeefinrichting, steunplaat voorzien van diode en geschikt voor de weergeefinrichting en werkwijze ter vervaardiging van de steunplaat.
JP3085407B2 (ja) * 1991-03-08 2000-09-11 キヤノン株式会社 半導体電子放出素子
US5141460A (en) * 1991-08-20 1992-08-25 Jaskie James E Method of making a field emission electron source employing a diamond coating
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating
US5536193A (en) * 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5686791A (en) * 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5449970A (en) * 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5619092A (en) * 1993-02-01 1997-04-08 Motorola Enhanced electron emitter

Also Published As

Publication number Publication date
EP0609532A1 (en) 1994-08-10
CN1059050C (zh) 2000-11-29
JP3171290B2 (ja) 2001-05-28
DE69320617T2 (de) 1999-03-11
RU94011577A (ru) 1995-12-10
EP0609532B1 (en) 1998-08-26
CN1092904A (zh) 1994-09-28
US5619092A (en) 1997-04-08
JPH06318428A (ja) 1994-11-15
DE69320617D1 (de) 1998-10-01
US5945778A (en) 1999-08-31
US5753997A (en) 1998-05-19
US5757114A (en) 1998-05-26

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