TW202603817A - 電漿處理裝置 - Google Patents

電漿處理裝置

Info

Publication number
TW202603817A
TW202603817A TW114108766A TW114108766A TW202603817A TW 202603817 A TW202603817 A TW 202603817A TW 114108766 A TW114108766 A TW 114108766A TW 114108766 A TW114108766 A TW 114108766A TW 202603817 A TW202603817 A TW 202603817A
Authority
TW
Taiwan
Prior art keywords
temperature
aforementioned
wafer
flow path
refrigerant flow
Prior art date
Application number
TW114108766A
Other languages
English (en)
Chinese (zh)
Inventor
范雯霏
中谷信太郎
一野貴雅
田中優貴
兵藤友昭
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW202603817A publication Critical patent/TW202603817A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602Temperature monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90Thermal treatments, e.g. annealing or sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW114108766A 2024-03-11 2025-03-10 電漿處理裝置 TW202603817A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2024/009248 WO2025191634A1 (ja) 2024-03-11 2024-03-11 プラズマ処理装置
WOPCT/JP2024/009248 2024-03-11

Publications (1)

Publication Number Publication Date
TW202603817A true TW202603817A (zh) 2026-01-16

Family

ID=97062947

Family Applications (1)

Application Number Title Priority Date Filing Date
TW114108766A TW202603817A (zh) 2024-03-11 2025-03-10 電漿處理裝置

Country Status (5)

Country Link
JP (1) JPWO2025191634A1 (https=)
KR (1) KR20250138715A (https=)
CN (1) CN120937120A (https=)
TW (1) TW202603817A (https=)
WO (1) WO2025191634A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100755295B1 (ko) * 1998-07-14 2007-09-05 델타 디자인, 인코포레이티드 전력 종속 피드백을 사용한 전자소자 제어
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP5414172B2 (ja) * 2007-12-05 2014-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6276919B2 (ja) * 2013-02-01 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置および試料台
JP7266481B2 (ja) * 2019-07-19 2023-04-28 東京エレクトロン株式会社 温度制御装置、温度制御方法、および検査装置
KR20240045237A (ko) * 2021-08-06 2024-04-05 가부시키가이샤 호리바 에스텍 웨이퍼 온도 제어 장치, 웨이퍼 온도 제어 장치용 제어 방법, 및 웨이퍼 온도 제어 장치용 프로그램

Also Published As

Publication number Publication date
KR20250138715A (ko) 2025-09-22
WO2025191634A1 (ja) 2025-09-18
JPWO2025191634A1 (https=) 2025-09-18
CN120937120A (zh) 2025-11-11

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