KR20250138715A - 플라스마 처리 장치 - Google Patents

플라스마 처리 장치

Info

Publication number
KR20250138715A
KR20250138715A KR1020257021049A KR20257021049A KR20250138715A KR 20250138715 A KR20250138715 A KR 20250138715A KR 1020257021049 A KR1020257021049 A KR 1020257021049A KR 20257021049 A KR20257021049 A KR 20257021049A KR 20250138715 A KR20250138715 A KR 20250138715A
Authority
KR
South Korea
Prior art keywords
temperature
wafer
locations
refrigerant passage
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257021049A
Other languages
English (en)
Korean (ko)
Inventor
웬페이 판
신타로 나카타니
다카마사 이치노
유키 다나카
도모아키 효도
Original Assignee
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 히타치하이테크 filed Critical 주식회사 히타치하이테크
Publication of KR20250138715A publication Critical patent/KR20250138715A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01L21/67248—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020257021049A 2024-03-11 2024-03-11 플라스마 처리 장치 Pending KR20250138715A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/009248 WO2025191634A1 (ja) 2024-03-11 2024-03-11 プラズマ処理装置

Publications (1)

Publication Number Publication Date
KR20250138715A true KR20250138715A (ko) 2025-09-22

Family

ID=97062947

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257021049A Pending KR20250138715A (ko) 2024-03-11 2024-03-11 플라스마 처리 장치

Country Status (5)

Country Link
JP (1) JPWO2025191634A1 (https=)
KR (1) KR20250138715A (https=)
CN (1) CN120937120A (https=)
TW (1) TW202603817A (https=)
WO (1) WO2025191634A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021019066A (ja) 2019-07-19 2021-02-15 東京エレクトロン株式会社 温度制御装置、温度制御方法、および検査装置
WO2023013637A1 (ja) 2021-08-06 2023-02-09 株式会社堀場エステック ウエハ温度制御装置、ウエハ温度制御装置用制御方法、及び、ウエハ温度制御装置用プログラム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100755295B1 (ko) * 1998-07-14 2007-09-05 델타 디자인, 인코포레이티드 전력 종속 피드백을 사용한 전자소자 제어
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP5414172B2 (ja) * 2007-12-05 2014-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6276919B2 (ja) * 2013-02-01 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置および試料台

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021019066A (ja) 2019-07-19 2021-02-15 東京エレクトロン株式会社 温度制御装置、温度制御方法、および検査装置
WO2023013637A1 (ja) 2021-08-06 2023-02-09 株式会社堀場エステック ウエハ温度制御装置、ウエハ温度制御装置用制御方法、及び、ウエハ温度制御装置用プログラム

Also Published As

Publication number Publication date
WO2025191634A1 (ja) 2025-09-18
JPWO2025191634A1 (https=) 2025-09-18
CN120937120A (zh) 2025-11-11
TW202603817A (zh) 2026-01-16

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