JPWO2025191634A1 - - Google Patents
Info
- Publication number
- JPWO2025191634A1 JPWO2025191634A1 JP2025535331A JP2025535331A JPWO2025191634A1 JP WO2025191634 A1 JPWO2025191634 A1 JP WO2025191634A1 JP 2025535331 A JP2025535331 A JP 2025535331A JP 2025535331 A JP2025535331 A JP 2025535331A JP WO2025191634 A1 JPWO2025191634 A1 JP WO2025191634A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2024/009248 WO2025191634A1 (ja) | 2024-03-11 | 2024-03-11 | プラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025191634A1 true JPWO2025191634A1 (https=) | 2025-09-18 |
Family
ID=97062947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025535331A Pending JPWO2025191634A1 (https=) | 2024-03-11 | 2024-03-11 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2025191634A1 (https=) |
| KR (1) | KR20250138715A (https=) |
| CN (1) | CN120937120A (https=) |
| TW (1) | TW202603817A (https=) |
| WO (1) | WO2025191634A1 (https=) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002009064A (ja) * | 2000-06-21 | 2002-01-11 | Hitachi Ltd | 試料の処理装置及び試料の処理方法 |
| JP2009141034A (ja) * | 2007-12-05 | 2009-06-25 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
| JP4703850B2 (ja) * | 1998-07-14 | 2011-06-15 | デルタ・デザイン・インコーポレイテッド | 電力追従帰還作用を利用した電子装置の温度制御 |
| JP2014150160A (ja) * | 2013-02-01 | 2014-08-21 | Hitachi High-Technologies Corp | プラズマ処理装置および試料台 |
| JP2021019066A (ja) * | 2019-07-19 | 2021-02-15 | 東京エレクトロン株式会社 | 温度制御装置、温度制御方法、および検査装置 |
| WO2023013637A1 (ja) * | 2021-08-06 | 2023-02-09 | 株式会社堀場エステック | ウエハ温度制御装置、ウエハ温度制御装置用制御方法、及び、ウエハ温度制御装置用プログラム |
-
2024
- 2024-03-11 CN CN202480006022.0A patent/CN120937120A/zh active Pending
- 2024-03-11 JP JP2025535331A patent/JPWO2025191634A1/ja active Pending
- 2024-03-11 KR KR1020257021049A patent/KR20250138715A/ko active Pending
- 2024-03-11 WO PCT/JP2024/009248 patent/WO2025191634A1/ja active Pending
-
2025
- 2025-03-10 TW TW114108766A patent/TW202603817A/zh unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4703850B2 (ja) * | 1998-07-14 | 2011-06-15 | デルタ・デザイン・インコーポレイテッド | 電力追従帰還作用を利用した電子装置の温度制御 |
| JP2002009064A (ja) * | 2000-06-21 | 2002-01-11 | Hitachi Ltd | 試料の処理装置及び試料の処理方法 |
| JP2009141034A (ja) * | 2007-12-05 | 2009-06-25 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
| JP2014150160A (ja) * | 2013-02-01 | 2014-08-21 | Hitachi High-Technologies Corp | プラズマ処理装置および試料台 |
| JP2021019066A (ja) * | 2019-07-19 | 2021-02-15 | 東京エレクトロン株式会社 | 温度制御装置、温度制御方法、および検査装置 |
| WO2023013637A1 (ja) * | 2021-08-06 | 2023-02-09 | 株式会社堀場エステック | ウエハ温度制御装置、ウエハ温度制御装置用制御方法、及び、ウエハ温度制御装置用プログラム |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20250138715A (ko) | 2025-09-22 |
| WO2025191634A1 (ja) | 2025-09-18 |
| CN120937120A (zh) | 2025-11-11 |
| TW202603817A (zh) | 2026-01-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250617 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260303 |
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| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260408 |