TW202505000A - 蝕刻組成物、蝕刻組成物的製造方法、矽氮化膜的蝕刻方法及半導體記憶體的製造方法 - Google Patents
蝕刻組成物、蝕刻組成物的製造方法、矽氮化膜的蝕刻方法及半導體記憶體的製造方法 Download PDFInfo
- Publication number
- TW202505000A TW202505000A TW113127665A TW113127665A TW202505000A TW 202505000 A TW202505000 A TW 202505000A TW 113127665 A TW113127665 A TW 113127665A TW 113127665 A TW113127665 A TW 113127665A TW 202505000 A TW202505000 A TW 202505000A
- Authority
- TW
- Taiwan
- Prior art keywords
- mass
- etching
- etching composition
- allyltrimethoxysilane
- less
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-121097 | 2023-07-25 | ||
| JP2023121097 | 2023-07-25 | ||
| JP2023192709 | 2023-11-13 | ||
| JP2023-192709 | 2023-11-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202505000A true TW202505000A (zh) | 2025-02-01 |
Family
ID=94375448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113127665A TW202505000A (zh) | 2023-07-25 | 2024-07-25 | 蝕刻組成物、蝕刻組成物的製造方法、矽氮化膜的蝕刻方法及半導體記憶體的製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7632780B1 (https=) |
| TW (1) | TW202505000A (https=) |
| WO (1) | WO2025023298A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070009448A1 (en) * | 2005-02-25 | 2007-01-11 | Kanca John A Iii | Silanol based dental treatment |
| KR102749433B1 (ko) * | 2019-07-12 | 2024-12-31 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이의 제조방법 |
| KR102325905B1 (ko) * | 2021-03-22 | 2021-11-12 | 연세대학교 산학협력단 | 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법 |
-
2024
- 2024-07-25 TW TW113127665A patent/TW202505000A/zh unknown
- 2024-07-25 JP JP2024569040A patent/JP7632780B1/ja active Active
- 2024-07-25 WO PCT/JP2024/026645 patent/WO2025023298A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025023298A1 (ja) | 2025-01-30 |
| JP7632780B1 (ja) | 2025-02-19 |
| JPWO2025023298A1 (https=) | 2025-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101380487B1 (ko) | 실리콘 질화막의 에칭 용액 | |
| KR101320416B1 (ko) | 식각액 조성물 및 이를 이용한 습식 식각방법 | |
| KR101623764B1 (ko) | 실리카질 막의 제조에 사용하는 침지용 용액 및 이를 사용한 실리카질 막의 제조법 | |
| JP4874614B2 (ja) | 多孔質の低誘電率組成物並びにそれを作製及び使用するための方法 | |
| TWI462158B (zh) | Film forming composition | |
| JP2001522536A (ja) | ナノポーラス・シリカ薄膜を製造するための改善された方法 | |
| KR102484988B1 (ko) | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 | |
| CN109207151B (zh) | 蚀刻组合物及利用其的蚀刻方法 | |
| CN110028971B (zh) | 蚀刻组合物及利用其的蚀刻方法 | |
| KR20190080290A (ko) | 식각 조성물 및 이를 이용한 식각 방법 | |
| KR101806328B1 (ko) | 실리카계 막 형성용 조성물, 실리카계 막, 및 전자 디바이스 | |
| EP3787008B1 (en) | Aqueous composition and cleaning method using same | |
| TW202505000A (zh) | 蝕刻組成物、蝕刻組成物的製造方法、矽氮化膜的蝕刻方法及半導體記憶體的製造方法 | |
| JP7632779B1 (ja) | エッチング組成物 | |
| JP2025019189A (ja) | エッチング組成物 | |
| JP2025019188A (ja) | エッチング組成物 | |
| TWI858437B (zh) | 氮化矽膜蝕刻組合物及其製備方法 | |
| JP7389007B2 (ja) | シリコン窒化膜エッチング用組成物及びこれを用いたシリコン窒化膜エッチング方法 | |
| KR20190142077A (ko) | 폴리실록산계 화합물 및 이를 포함하는 실리콘 질화막 식각 조성물 | |
| KR102194975B1 (ko) | 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막 | |
| KR102311328B1 (ko) | 실리콘 질화막 식각 방법 및 이를 이용한 반도체 소자의 제조 방법 | |
| TWI799994B (zh) | 用於提昇介電膜的性質的添加物及製造緻密有機二氧化矽膜之方法 | |
| WO2026075173A1 (ja) | エッチング液 | |
| WO2023223936A1 (ja) | 窒化ケイ素エッチング液組成物 | |
| JP2026066219A (ja) | エッチング液 |