JP7632780B1 - エッチング組成物 - Google Patents
エッチング組成物 Download PDFInfo
- Publication number
- JP7632780B1 JP7632780B1 JP2024569040A JP2024569040A JP7632780B1 JP 7632780 B1 JP7632780 B1 JP 7632780B1 JP 2024569040 A JP2024569040 A JP 2024569040A JP 2024569040 A JP2024569040 A JP 2024569040A JP 7632780 B1 JP7632780 B1 JP 7632780B1
- Authority
- JP
- Japan
- Prior art keywords
- mass
- less
- etching
- allyltrimethoxysilane
- etching composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024203372A JP2025019189A (ja) | 2023-07-25 | 2024-11-21 | エッチング組成物 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023121097 | 2023-07-25 | ||
| JP2023121097 | 2023-07-25 | ||
| JP2023192709 | 2023-11-13 | ||
| JP2023192709 | 2023-11-13 | ||
| PCT/JP2024/026645 WO2025023298A1 (ja) | 2023-07-25 | 2024-07-25 | エッチング組成物 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024203372A Division JP2025019189A (ja) | 2023-07-25 | 2024-11-21 | エッチング組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2025023298A1 JPWO2025023298A1 (https=) | 2025-01-30 |
| JP7632780B1 true JP7632780B1 (ja) | 2025-02-19 |
| JPWO2025023298A5 JPWO2025023298A5 (https=) | 2025-07-01 |
Family
ID=94375448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024569040A Active JP7632780B1 (ja) | 2023-07-25 | 2024-07-25 | エッチング組成物 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7632780B1 (https=) |
| TW (1) | TW202505000A (https=) |
| WO (1) | WO2025023298A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070009448A1 (en) * | 2005-02-25 | 2007-01-11 | Kanca John A Iii | Silanol based dental treatment |
| JP2021015968A (ja) * | 2019-07-12 | 2021-02-12 | オーシーアイ カンパニー リミテッドOCI Company Ltd. | シリコン窒化膜エッチング溶液及びこの製造方法 |
| KR102325905B1 (ko) * | 2021-03-22 | 2021-11-12 | 연세대학교 산학협력단 | 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법 |
-
2024
- 2024-07-25 TW TW113127665A patent/TW202505000A/zh unknown
- 2024-07-25 JP JP2024569040A patent/JP7632780B1/ja active Active
- 2024-07-25 WO PCT/JP2024/026645 patent/WO2025023298A1/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070009448A1 (en) * | 2005-02-25 | 2007-01-11 | Kanca John A Iii | Silanol based dental treatment |
| JP2021015968A (ja) * | 2019-07-12 | 2021-02-12 | オーシーアイ カンパニー リミテッドOCI Company Ltd. | シリコン窒化膜エッチング溶液及びこの製造方法 |
| KR102325905B1 (ko) * | 2021-03-22 | 2021-11-12 | 연세대학교 산학협력단 | 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법 |
Non-Patent Citations (2)
| Title |
|---|
| PARK, Taegun et al.,Passivation of poly-Si surface using vinyl and epoxy group additives for selective Si3N4 etching in H3PO4 solution,Applied Surface Science,2022年10月04日,Vol. 608, 155143,pp. 1-9 |
| PARK, TAEGUN ET AL.: "Passivation of poly-Si surface using vinyl and epoxy group additives for selective Si3N4 etching in", APPLIED SURFACE SCIENCE, vol. Vol. 608, 155143, JPN6024037618, 4 October 2022 (2022-10-04), pages 1 - 9, ISSN: 0005500206 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025023298A1 (ja) | 2025-01-30 |
| TW202505000A (zh) | 2025-02-01 |
| JPWO2025023298A1 (https=) | 2025-01-30 |
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