TW202430670A - 附導電膜基板、反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 - Google Patents

附導電膜基板、反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 Download PDF

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Publication number
TW202430670A
TW202430670A TW112136717A TW112136717A TW202430670A TW 202430670 A TW202430670 A TW 202430670A TW 112136717 A TW112136717 A TW 112136717A TW 112136717 A TW112136717 A TW 112136717A TW 202430670 A TW202430670 A TW 202430670A
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TW
Taiwan
Prior art keywords
substrate
film
conductive film
layer
reflective mask
Prior art date
Application number
TW112136717A
Other languages
English (en)
Chinese (zh)
Inventor
岸田響
中川真德
Original Assignee
日商Ｈｏｙａ股份有限公司
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Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202430670A publication Critical patent/TW202430670A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW112136717A 2022-09-28 2023-09-26 附導電膜基板、反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 TW202430670A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-154690 2022-09-28
JP2022154690 2022-09-28

Publications (1)

Publication Number Publication Date
TW202430670A true TW202430670A (zh) 2024-08-01

Family

ID=90477833

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112136717A TW202430670A (zh) 2022-09-28 2023-09-26 附導電膜基板、反射型遮罩基底、反射型遮罩及半導體裝置之製造方法

Country Status (4)

Country Link
JP (1) JPWO2024071026A1 (https=)
KR (1) KR20250076524A (https=)
TW (1) TW202430670A (https=)
WO (1) WO2024071026A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121115389A (zh) * 2024-06-12 2025-12-12 信越化学工业株式会社 反射型掩模坯料、反射型掩模及反射型掩模坯料的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2581789B1 (en) 2011-10-14 2020-04-29 Fundació Institut de Ciències Fotòniques Optically transparent and electrically conductive coatings and method for their deposition on a substrate
JP6157874B2 (ja) 2012-03-19 2017-07-05 Hoya株式会社 Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法
SG11201710317RA (en) * 2015-06-17 2018-01-30 Hoya Corp Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
JP7350571B2 (ja) * 2019-08-30 2023-09-26 Hoya株式会社 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法
JP7354005B2 (ja) * 2020-02-12 2023-10-02 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPWO2024071026A1 (https=) 2024-04-04
KR20250076524A (ko) 2025-05-29
WO2024071026A1 (ja) 2024-04-04

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