KR20250076524A - 도전막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 - Google Patents

도전막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR20250076524A
KR20250076524A KR1020257007565A KR20257007565A KR20250076524A KR 20250076524 A KR20250076524 A KR 20250076524A KR 1020257007565 A KR1020257007565 A KR 1020257007565A KR 20257007565 A KR20257007565 A KR 20257007565A KR 20250076524 A KR20250076524 A KR 20250076524A
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KR
South Korea
Prior art keywords
film
substrate
layer
conductive film
reflective mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257007565A
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English (en)
Korean (ko)
Inventor
히비키 기시다
마사노리 나카가와
Original Assignee
호야 가부시키가이샤
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Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20250076524A publication Critical patent/KR20250076524A/ko
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020257007565A 2022-09-28 2023-09-25 도전막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Pending KR20250076524A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022154690 2022-09-28
JPJP-P-2022-154690 2022-09-28
PCT/JP2023/034697 WO2024071026A1 (ja) 2022-09-28 2023-09-25 導電膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20250076524A true KR20250076524A (ko) 2025-05-29

Family

ID=90477833

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257007565A Pending KR20250076524A (ko) 2022-09-28 2023-09-25 도전막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Country Status (4)

Country Link
JP (1) JPWO2024071026A1 (https=)
KR (1) KR20250076524A (https=)
TW (1) TW202430670A (https=)
WO (1) WO2024071026A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121115389A (zh) * 2024-06-12 2025-12-12 信越化学工业株式会社 反射型掩模坯料、反射型掩模及反射型掩模坯料的制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013225662A (ja) 2012-03-19 2013-10-31 Hoya Corp Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法
JP2014532313A (ja) 2011-10-14 2014-12-04 フンダシオ インスティテュート デ サイエンセズ フォトニクス 光透過性導電性コーティング及び基板上へのそれらの堆積の方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201710317RA (en) * 2015-06-17 2018-01-30 Hoya Corp Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
JP7350571B2 (ja) * 2019-08-30 2023-09-26 Hoya株式会社 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法
JP7354005B2 (ja) * 2020-02-12 2023-10-02 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014532313A (ja) 2011-10-14 2014-12-04 フンダシオ インスティテュート デ サイエンセズ フォトニクス 光透過性導電性コーティング及び基板上へのそれらの堆積の方法
JP2013225662A (ja) 2012-03-19 2013-10-31 Hoya Corp Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法

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Publication number Publication date
JPWO2024071026A1 (https=) 2024-04-04
WO2024071026A1 (ja) 2024-04-04
TW202430670A (zh) 2024-08-01

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PA0105 International application

Patent event date: 20250306

Patent event code: PA01051R01D

Comment text: International Patent Application

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