TW202347434A - 基板處理裝置及基板處理方法 - Google Patents
基板處理裝置及基板處理方法 Download PDFInfo
- Publication number
- TW202347434A TW202347434A TW112117650A TW112117650A TW202347434A TW 202347434 A TW202347434 A TW 202347434A TW 112117650 A TW112117650 A TW 112117650A TW 112117650 A TW112117650 A TW 112117650A TW 202347434 A TW202347434 A TW 202347434A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- liquid
- nozzle
- potentiometer
- processing liquid
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 244
- 238000012545 processing Methods 0.000 title claims abstract description 88
- 238000003672 processing method Methods 0.000 title claims description 12
- 239000007788 liquid Substances 0.000 claims abstract description 206
- 230000002093 peripheral effect Effects 0.000 claims abstract description 36
- 238000005259 measurement Methods 0.000 claims description 19
- 210000000078 claw Anatomy 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 abstract description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 81
- 238000001035 drying Methods 0.000 description 66
- 239000007789 gas Substances 0.000 description 43
- 239000000126 substance Substances 0.000 description 31
- 238000010586 diagram Methods 0.000 description 17
- 239000008367 deionised water Substances 0.000 description 14
- 229910021641 deionized water Inorganic materials 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 238000009826 distribution Methods 0.000 description 9
- 238000011010 flushing procedure Methods 0.000 description 5
- 230000009365 direct transmission Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022086351 | 2022-05-26 | ||
JP2022-086351 | 2022-05-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202347434A true TW202347434A (zh) | 2023-12-01 |
Family
ID=88919089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW112117650A TW202347434A (zh) | 2022-05-26 | 2023-05-12 | 基板處理裝置及基板處理方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2023228776A1 (enrdf_load_stackoverflow) |
TW (1) | TW202347434A (enrdf_load_stackoverflow) |
WO (1) | WO2023228776A1 (enrdf_load_stackoverflow) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004186633A (ja) * | 2002-12-06 | 2004-07-02 | Shimada Phys & Chem Ind Co Ltd | 平板状被処理物の処理装置および処理方法 |
JP2008016660A (ja) * | 2006-07-06 | 2008-01-24 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP5408982B2 (ja) * | 2008-12-09 | 2014-02-05 | 芝浦メカトロニクス株式会社 | 基板の帯電除去装置及び帯電除去方法 |
JP2011222886A (ja) * | 2010-04-14 | 2011-11-04 | Panasonic Corp | 基板洗浄方法及び基板洗浄装置 |
JP2014194965A (ja) * | 2013-03-28 | 2014-10-09 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2019046869A (ja) * | 2017-08-30 | 2019-03-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
-
2023
- 2023-05-12 JP JP2024523036A patent/JPWO2023228776A1/ja active Pending
- 2023-05-12 TW TW112117650A patent/TW202347434A/zh unknown
- 2023-05-12 WO PCT/JP2023/017891 patent/WO2023228776A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2023228776A1 (ja) | 2023-11-30 |
JPWO2023228776A1 (enrdf_load_stackoverflow) | 2023-11-30 |
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