WO2023228776A1 - 基板処理装置、および基板処理方法 - Google Patents

基板処理装置、および基板処理方法 Download PDF

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Publication number
WO2023228776A1
WO2023228776A1 PCT/JP2023/017891 JP2023017891W WO2023228776A1 WO 2023228776 A1 WO2023228776 A1 WO 2023228776A1 JP 2023017891 W JP2023017891 W JP 2023017891W WO 2023228776 A1 WO2023228776 A1 WO 2023228776A1
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WIPO (PCT)
Prior art keywords
substrate
liquid
nozzle
processing liquid
electrometer
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PCT/JP2023/017891
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English (en)
French (fr)
Japanese (ja)
Inventor
博史 竹口
孝仁 中庄谷
一樹 小佐井
和義 篠原
Original Assignee
東京エレクトロン株式会社
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Priority to JP2024523036A priority Critical patent/JPWO2023228776A1/ja
Publication of WO2023228776A1 publication Critical patent/WO2023228776A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present disclosure relates to a substrate processing apparatus and a substrate processing method.
  • the substrate processing apparatus described in Patent Document 1 supplies DIW (deionized water) and IPA (isopropyl alcohol) to the upper surface of the substrate in this order.
  • DIW deionized water
  • IPA isopropyl alcohol
  • the substrate processing apparatus supplies IPA to the center of the top surface of the substrate and replenishes DIW to the outer periphery of the top surface of the substrate.
  • the substrate processing apparatus supplies IPA to the center of the upper surface of the substrate for a predetermined period of time.
  • One aspect of the present disclosure provides a technique for reducing the consumption amount of a second processing liquid that replaces the first processing liquid.
  • a substrate processing apparatus includes a substrate holding part that holds a substrate horizontally, and a first processing liquid supply supplying a first processing liquid to a surface of the substrate held by the substrate holding part. a second processing liquid supply section that supplies a second processing liquid to replace the first processing liquid to the surface of the substrate held by the substrate holding section; and an electrometer for measuring the potential at the outer periphery of the surface of the substrate.
  • FIG. 1 is a sectional view showing a substrate processing apparatus according to one embodiment.
  • FIG. 2 is a plan view showing an example of the first nozzle moving section and the second nozzle moving section.
  • FIG. 3 is a flowchart illustrating a substrate processing method according to one embodiment.
  • FIG. 4(A) is a diagram showing an example of step S101
  • FIG. 4(B) is a diagram showing an example of the first stage of step S102
  • FIG. 4(C) is a diagram showing an example of the second stage of step S102.
  • FIG. 4D is a diagram showing an example of the third stage of step S102.
  • FIG. 5(A) is a diagram showing an example of the first stage of step S103, FIG.
  • FIG. 5(B) is a diagram showing an example of the second stage of step S103
  • FIG. 5(C) is a diagram showing an example of step S104
  • FIG. 5(D) is a diagram showing an example of step S105
  • FIG. 5(E) is a diagram showing an example of step S106.
  • FIG. 6 is a diagram showing an example of experimental data regarding IPA supply time.
  • FIG. 7 is a diagram showing an example of experimental data regarding IPA supply time and potential distribution.
  • FIG. 8(A) is a diagram showing an example of the potential distribution when DIW is supplied
  • FIG. 8(B) is a diagram showing an example of the potential distribution during replacement from DIW to IPA
  • FIG. 8(D) is a diagram showing an example of the potential distribution at the end of supplying IPA
  • FIG. 8(D) is a diagram showing an example of the potential distribution after drying.
  • FIG. 9 is a diagram showing an example of a change in the potential of the outer peripheral portion of the upper surface of the substrate depending on the IPA supply time in step S104.
  • the same or corresponding configurations are denoted by the same reference numerals, and the description thereof may be omitted.
  • the X-axis direction, Y-axis direction, and Z-axis direction are directions perpendicular to each other.
  • the X-axis direction and the Y-axis direction are horizontal, and the Z-axis direction is vertical.
  • the substrate processing apparatus 1 processes the substrate W by supplying a processing liquid to the substrate W.
  • the substrate processing apparatus 1 supplies, for example, a chemical liquid, a rinsing liquid, and a drying liquid as processing liquids to the substrate W in this order.
  • the chemical solution is, for example, DHF (dilute hydrofluoric acid), although it is not particularly limited.
  • the rinsing liquid is, for example, DIW (deionized water), although it is not particularly limited.
  • the drying liquid is, for example, IPA (isopropyl alcohol), although it is not particularly limited.
  • the drying liquid may have a surface tension lower than that of the rinsing liquid.
  • the substrate processing apparatus 1 may supply dry gas to the substrate W.
  • the drying gas is, for example, nitrogen gas. Note that the drying gas is not limited to nitrogen gas.
  • the drying gas may be, for example, dry air.
  • the substrate processing apparatus 1 includes, for example, a processing container 10, a substrate holding section 20, a substrate rotation section 25, a chemical solution supply section 31, a first rinsing solution supply section 32, a drying solution supply section 33, and a second rinsing solution supply section 32.
  • a second dry gas nozzle 45 a first nozzle moving section 51, a second nozzle moving section 52, a recovery section 60, and a control section 90.
  • the processing container 10 accommodates the substrate holding section 20 and the like.
  • a gate 12 and a gate valve 13 for opening and closing the gate 12 are provided on the side wall of the processing container 10 .
  • the substrate W is carried into the processing chamber 10 via the gate 12 by a transport device (not shown).
  • the substrate W is processed with a processing liquid inside the processing container 10.
  • the substrate W is transported to the outside of the processing container 10 via the gate 12 by the transport device.
  • the substrate holding unit 20 is provided inside the processing container 10 and holds the substrate W horizontally.
  • the substrate holding section 20 has, for example, a claw section 21 that holds the outer peripheral portion of the substrate W.
  • a plurality of claw portions 21 are provided at equal intervals in the circumferential direction of the substrate W.
  • the substrate holder 20 may vacuum suck the lower surface of the substrate W.
  • the substrate rotating section 25 rotates the substrate W together with the substrate holding section 20 by rotating the substrate holding section 20 .
  • the chemical liquid supply unit 31 supplies a chemical liquid to the substrate W via the chemical liquid/rinsing liquid nozzle 41.
  • the first rinsing liquid supply section 32 supplies a rinsing liquid to the substrate W via the chemical/rinsing liquid nozzle 41 .
  • the drying liquid supply unit 33 supplies a drying liquid to the substrate W via the drying liquid nozzle 42 .
  • the chemical liquid/rinsing liquid nozzle 41 and the drying liquid nozzle 42 are arranged above the substrate W and supply the processing liquid to the upper surface Wa of the substrate. Note that instead of the chemical liquid/rinsing liquid nozzle 41, a chemical liquid nozzle and a rinsing liquid nozzle may be provided separately.
  • the second rinsing liquid supply unit 34 supplies a rinsing liquid to the substrate W via the rinsing liquid nozzle 43.
  • the first dry gas supply section 35 supplies dry gas to the substrate W via the first dry gas nozzle 44 .
  • the second dry gas supply unit 36 supplies dry gas to the substrate W via the second dry gas nozzle 45 .
  • the rinse liquid nozzle 43, the first dry gas nozzle 44, and the second dry gas nozzle 45 are arranged above the substrate W, and supply the processing liquid or dry gas to the upper surface Wa of the substrate.
  • the chemical solution supply section 31, the first rinsing solution supply section 32, the drying solution supply section 33, the second rinsing solution supply section 34, the first drying gas supply section 35, and the second drying gas supply section 36 each have an opening/closing mechanism (not shown), for example. It has a valve, a flow meter, and a flow controller.
  • the opening/closing valve opens and closes the flow path of the processing liquid or drying gas.
  • a flow meter measures the flow rate of processing liquid or drying gas.
  • the flow rate controller controls the flow rate of the processing liquid or drying gas so that the measured value of the flow meter becomes a set value.
  • the first nozzle moving unit 51 moves the rinse liquid nozzle 43, the first dry gas nozzle 44, and the second dry gas nozzle 45.
  • the first nozzle moving section 51 includes a first arm 51a and a first turning mechanism 51b.
  • the first turning mechanism 51b moves the rinse liquid nozzle 43, the first dry gas nozzle 44, and the second dry gas nozzle 45 in the horizontal direction by turning the first arm 51a.
  • the first turning mechanism 51b moves the rinse liquid nozzle 43, the first dry gas nozzle 44, and the second dry gas nozzle 45 in the vertical direction by raising and lowering the first arm 51a.
  • first nozzle moving section 51 may include a guide rail and a linear motion mechanism instead of the first arm 51a and the first turning mechanism 51b.
  • the linear motion mechanism moves the rinse liquid nozzle 43, the first dry gas nozzle 44, and the second dry gas nozzle 45 in the horizontal and vertical directions along the guide rail.
  • the second nozzle moving unit 52 moves the chemical liquid/rinsing liquid nozzle 41 and the drying liquid nozzle 42 independently of the rinsing liquid nozzle 43 and the like.
  • the second nozzle moving section 52 includes a second arm 52a and a second turning mechanism 52b.
  • the second turning mechanism 52b moves the chemical solution/rinsing liquid nozzle 41 and the drying liquid nozzle 42 in the horizontal direction by rotating the second arm 52a.
  • the second rotating mechanism 52b moves the chemical liquid/rinsing liquid nozzle 41 and the drying liquid nozzle 42 in the vertical direction by raising and lowering the second arm 52a.
  • the second nozzle moving section 52 may include a guide rail and a linear motion mechanism instead of the second arm 52a and the second turning mechanism 52b.
  • the linear motion mechanism moves the chemical liquid/rinsing liquid nozzle 41 and the drying liquid nozzle 42 in the horizontal and vertical directions along the guide rail.
  • the rinsing liquid corresponds to the first processing liquid
  • the second rinsing liquid supply section 34 corresponds to the first processing liquid supply section
  • the rinsing liquid nozzle 43 corresponds to the first nozzle.
  • the drying liquid corresponds to the second processing liquid
  • the drying liquid supply section 33 corresponds to the second processing liquid supply section
  • the drying liquid nozzle 42 corresponds to the second nozzle.
  • the combination of the first treatment liquid and the second treatment liquid is not particularly limited.
  • the second treatment liquid may be replaced with the first treatment liquid.
  • the first treatment liquid may be a chemical liquid
  • the second treatment liquid may be a rinse liquid.
  • the first treatment liquid and the second treatment liquid may be sequentially discharged from the same nozzle.
  • the nozzle may be arranged below the substrate W, and may supply the processing liquid or dry gas to the substrate lower surface Wb.
  • the recovery unit 60 recovers the processing liquid supplied to the substrate W.
  • the collection unit 60 includes, for example, a cup 61.
  • the cup 61 surrounds the outer periphery of the substrate W held by the substrate holder 20 and receives the processing liquid splashed from the outer periphery of the substrate W. Although the cup 61 does not rotate together with the substrate holder 20 in this embodiment, it may rotate together with the substrate holder 20.
  • a drain pipe 62 and an exhaust pipe 63 are provided at the bottom of the cup 61.
  • the drain pipe 62 drains the liquid accumulated inside the cup 61.
  • the exhaust pipe 63 exhausts the gas accumulated inside the cup 61.
  • the control unit 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage unit 92 such as a memory.
  • the storage unit 92 stores programs that control various processes executed in the substrate processing apparatus 1.
  • the control unit 90 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute a program stored in the storage unit 92 .
  • the substrate processing method includes steps S101 to S106, for example, as shown in FIG. Steps S101 to S106 are performed under the control of the control section 90.
  • the processing from step S101 onwards is started when a transport device (not shown) carries the substrate W into the processing container 10 and the substrate holding section 20 holds the substrate W horizontally. Note that the substrate processing method may not include steps S103 and S105.
  • Step S101 includes the chemical liquid supply unit 31 (see FIG. 1) supplying the chemical liquid L1 to the substrate W via the chemical liquid/rinsing liquid nozzle 41, as shown in FIG. 4(A).
  • the chemical liquid/rinsing liquid nozzle 41 supplies the chemical liquid L1 to the center of the upper surface Wa of the substrate.
  • the substrate W is being rotated, and the chemical liquid L1 flows radially outward of the upper surface Wa of the substrate due to centrifugal force, forming a liquid film over the entire upper surface Wa of the substrate.
  • step S102 includes the first rinsing liquid supply unit 32 (see FIG. 1) supplying the rinsing liquid L2 to the substrate W via the chemical liquid/rinsing liquid nozzle 41. .
  • the chemical/rinsing liquid nozzle 41 supplies the rinsing liquid L2 to the center of the upper surface Wa of the substrate.
  • the substrate W is being rotated, and the rinsing liquid L2 flows radially outward of the substrate top surface Wa due to centrifugal force, forming a liquid film over the entire substrate top surface Wa.
  • the chemical liquid L1 is replaced with the rinse liquid L2.
  • Step S102 may include preparation for performing step S103, as shown in FIGS. 4(C) and 4(D). Note that, as described above, step S103 may not be performed. If step S103 is not performed, step S102 does not include preparation for step S103.
  • step S104 is performed following step S102 without step S103, the chemical/rinsing liquid nozzle 41 may supply the drying liquid L3 to the center of the upper surface Wa of the substrate in step S104.
  • step S102 includes the chemical solution/rinsing liquid nozzle 41 and the rinsing liquid nozzle 43 simultaneously discharging the rinsing liquid L2, as shown in FIG. 4(C), for example.
  • the second nozzle moving section 52 moves the chemical liquid/rinsing liquid nozzle 41 radially outward of the substrate top surface Wa
  • the first nozzle moving section 51 moves the rinsing liquid nozzle 43 radially inward of the substrate top surface Wa. move it towards the Thereby, the nozzle located directly above the center of the substrate upper surface Wa can be replaced without interrupting the supply of the rinsing liquid L2.
  • FIG. 4(C) the second nozzle moving section 52 moves the chemical liquid/rinsing liquid nozzle 41 radially outward of the substrate top surface Wa
  • the first nozzle moving section 51 moves the rinsing liquid nozzle 43 radially inward of the substrate top surface Wa. move it towards the Thereby, the nozzle located directly above the center of the substrate upper surface Wa can be replaced without interrupting
  • step S103 the second rinsing liquid supply unit 34 (see FIG. 1) supplies the rinsing liquid L2 to the substrate upper surface Wa through the rinsing liquid nozzle 43.
  • the drying liquid supply section 33 (see FIG. 1) supplies the drying liquid L3 to the upper surface Wa of the substrate via the drying liquid nozzle 42.
  • the supply of the rinsing liquid L2 and the supply of the drying liquid L3 are performed simultaneously.
  • the first nozzle moving section 51 moves the rinsing liquid nozzle 43 radially outward of the substrate top surface Wa
  • the second nozzle moving section 52 moves the drying liquid nozzle 42 radially inward of the substrate top surface Wa. move it.
  • the nozzle located directly above the center of the substrate upper surface Wa can be replaced while suppressing drying of the substrate upper surface Wa.
  • the drying liquid nozzle 42 stops moving right above the center of the substrate top surface Wa, and continues to discharge the drying liquid L3 to the center of the substrate top surface Wa.
  • the rinse liquid nozzle 43 continues to move outward in the radial direction of the substrate upper surface Wa and continues to discharge the rinse liquid L2.
  • the rinsing liquid L2 is replenished in front of the drying liquid L3. This makes it possible to prevent the liquid film from discontinuing.
  • the rinsing liquid nozzle 43 stops discharging the rinsing liquid after reaching just above the outer peripheral portion of the upper surface Wa of the substrate.
  • Step S104 includes the drying liquid supply unit 33 (see FIG. 1) supplying the drying liquid L3 to the upper surface Wa of the substrate via the drying liquid nozzle 42, as shown in FIG. 5(C).
  • the drying liquid nozzle 42 supplies the drying liquid L3 to the center of the upper surface Wa of the substrate.
  • the substrate W is being rotated, and the drying liquid L3 flows radially outward of the upper surface Wa of the substrate due to centrifugal force, forming a liquid film over the entire upper surface Wa of the substrate.
  • the rinsing liquid L2 is replaced with the drying liquid L3.
  • Step S105 includes the second nozzle moving unit 52 moving the drying liquid nozzle 42 radially outward of the upper surface Wa of the substrate, as shown in FIG. 5(D).
  • the drying liquid nozzle 42 moves from directly above the center of the substrate upper surface Wa to directly above the outer peripheral portion of the substrate upper surface Wa while discharging the drying liquid L3.
  • the exposed portion is a portion exposed from the drying liquid L3, and the covered portion is a portion covered with the drying liquid L3.
  • Step S105 may include, as shown in FIG. 5(D), the second drying gas nozzle 45 discharging drying gas to the boundary between the exposed portion and the covered portion of the upper surface Wa of the substrate, thereby suppressing the boundary.
  • the discharge direction of the second dry gas nozzle 45 is inclined radially outward as it goes vertically downward.
  • the second dry gas nozzle 45 moves radially outward of the substrate upper surface Wa while discharging dry gas.
  • step S105 may include suppressing the boundary between the exposed portion and the covered portion of the substrate upper surface Wa by causing the first dry gas nozzle 44 instead of the second dry gas nozzle 45 to discharge dry gas to the boundary. .
  • the discharge direction of the first dry gas nozzle 44 is directly downward.
  • step S105 may not be performed. By not performing step S105, the consumption amount of the drying liquid L3 can be reduced.
  • Step S106 includes drying the substrate W by rotating the substrate W by the substrate rotation unit 25 (see FIG. 1), as shown in FIG. 5(E).
  • the processing liquid attached to the substrate W can be shaken off, and the substrate W can be dried. Thereafter, the substrate W is carried out of the processing container 10 by a transport device (not shown).
  • the inventor of the present invention considered shortening the IPA supply time in order to reduce the consumption of IPA, which is the drying liquid L3.
  • the inventor investigated the relationship between the supply time of IPA in step S104 and the quality of the top surface Wa of the substrate after drying.
  • the quality of the upper surface Wa of the substrate was evaluated using three items: (A) the number of attached particles, (B) the collapse rate of the uneven pattern, and (C) the potential of the outer periphery.
  • the charging of the substrate W may cause electrostatic damage or particle adhesion in the next process.
  • the evaluation in FIG. 6 is the evaluation when steps S101 to S104 and S106, excluding step S105 in FIG. 3, were performed.
  • An evaluation of "OK” means that quality equivalent to the standard quality was obtained.
  • the evaluation "NG” means that a quality lower than the standard quality was obtained.
  • the standard quality is the quality when all steps S101 to S106 are performed without shortening the IPA supply time in step S104.
  • FIG. 6 shows the radial distribution of potential on the upper surface Wa of the substrate. As is clear from FIG. 7, there was a tendency that the shorter the IPA supply time, the higher the potential at the outer circumference. It has been confirmed that if the potential distribution is the standard distribution (standard quality) shown by the solid line in FIG. 7, no problems will occur in the next process.
  • a dashed line L indicates the rotation center line of the substrate W.
  • the upper surface Wa of the substrate is negatively charged except for the outer peripheral portion of the upper surface Wa of the substrate. This is considered to be because negatively charged OH groups adhere to the upper surface Wa of the substrate.
  • - ions are scattered at the outer peripheral portion of the upper surface Wa of the substrate due to the scattering of DIW, and + ions remain on the upper surface Wa of the substrate.
  • the replacement of DIW with IPA proceeds from the center of the upper surface Wa of the substrate toward the outer periphery of the upper surface Wa of the substrate.
  • FIG. 8C if DIW is insufficiently replaced by IPA at the outer periphery of the upper surface Wa of the substrate, + ions remain.
  • FIG. 8(D) the outer circumferential portion of the upper surface Wa of the substrate after drying is considered to be positively charged.
  • the inventors of the present application have found that in order to reduce the consumption of IPA while maintaining the quality of the substrate W, it is sufficient to monitor the potential at the outer periphery of the upper surface Wa of the substrate. As shown in FIG. 9, the longer the IPA supply time in step S104, the more gradual the change in potential becomes. If the supply of IPA is terminated when the difference ( ⁇ 0) between two potentials measured at intervals of a unit time reaches the threshold value or less, the consumption of IPA can be reduced while maintaining the quality of the substrate W.
  • the substrate processing apparatus 1 includes electrometers 71 and 72.
  • the electrometers 71 and 72 measure the potential at the outer periphery of the upper surface Wa of the substrate held by the substrate holder 20.
  • the upper surface Wa of the substrate includes a horizontal surface and a beveled surface.
  • the outer periphery of the substrate upper surface Wa refers to a portion within 30 mm from the outer periphery of the substrate upper surface Wa.
  • the substrate processing apparatus 1 only needs to include one of the electrometers 71 and 72. Further, when the nozzle supplies the processing liquid to the substrate lower surface Wb, the electrometers 71 and 72 may measure the potential of the outer peripheral portion of the substrate lower surface Wb.
  • the substrate lower surface Wb includes a horizontal surface and a beveled surface.
  • the control unit 90 controls the electrometers 71 and 72 to measure measurement data (for example, the measurement data shown in FIG. 9) regarding changes in potential depending on the supply time of the drying liquid L3, and stores the measurement data in the storage unit 92. control.
  • measurement data for example, the measurement data shown in FIG. 9
  • an average value of the measured values may be stored in the storage section 92.
  • the control unit 90 determines the time to end the supply of the drying liquid L3 based on the measurement data stored in the storage unit 92.
  • control unit 90 determines the time to end the supply of the drying liquid L3 based on the time when the difference ( ⁇ 0) between two potentials measured at a unit time interval reaches a threshold value or less.
  • the difference ( ⁇ 0) between two potentials measured at a unit time interval represents the speed of change in potential.
  • the threshold value is set in advance through experiments or the like, and is set in consideration of the quality of the substrate W and the consumption amount of the drying liquid L3.
  • the control unit 90 may terminate the supply of the drying liquid L3 when the difference reaches the threshold value or less, but the control unit 90 may terminate the supply of the drying liquid L3 when a desired delay time has elapsed since the difference reached the threshold value or less. The supply may be terminated.
  • control unit 90 may determine the time to end the supply of the drying liquid L3 based on the potential itself instead of the rate of change of the potential.
  • the control unit 90 may determine the time to end the supply of the drying liquid L3, for example, based on the time when the potential reaches a threshold value or less.
  • the control unit 90 determines the supply time of the drying liquid L3 in step S104, for example, by determining the time to end the supply of the drying liquid L3. After that, the control unit 90 may perform step S104 at the determined supply time of the drying liquid L3. Therefore, acquisition of measurement data as shown in FIG. 9 does not have to be performed every time the substrate W is processed.
  • control unit 90 may perform control such that the potential is measured every unit time using electrometers 71 and 72 while the drying liquid L3 is being supplied to the substrate W.
  • measurement data regarding changes in potential depending on the supply time of the drying liquid L3 can be acquired. Therefore, measurement data can be created using the same single substrate W.
  • control unit 90 may perform control to repeatedly measure the potential using the electrometers 71 and 72 after drying the substrate W while changing the supply time of the drying liquid L3. In this case, the potential can be measured after the rotation of the substrate W has stopped. Therefore, as the electrometers 71 and 72, contact type and wired type ones can be used.
  • the electrometer 71 may be a surface electrometer that measures the potential at a distance from the upper surface Wa of the substrate. Surface electrometers are non-contact. Since the electrometer 71 does not rotate together with the substrate W, it is possible to measure the potential at the outer periphery of the substrate upper surface Wa over the entire circumferential direction of the substrate W. Further, since the electrometer 71 does not rotate together with the substrate W, the measurement data can be transmitted to the control unit 90 by wire. However, the electrometer 71 can also transmit measurement data to the control unit 90 wirelessly.
  • the electrometer 71 may be moved together with the rinse liquid nozzle 43 by the first nozzle moving section 51. Interference between the substrate W and the electrometer 71 can be prevented when the substrate W is loaded or unloaded. Furthermore, the electrometer 71 can be moved using existing equipment. However, if there is no cost problem, a new moving section for moving the electrometer 71 may be installed.
  • the electrometer 72 may be electrically connected to the outer circumferential portion of the substrate W via the claw portion 21 by contacting the claw portion 21 of the substrate holder 20, as shown in FIG. 5(C).
  • the electrometer 72 is a contact type. There may be a plurality of electrometers 72, and the plurality of electrometers 72 may contact different claw portions 21.
  • the potential of the outer circumferential portion of the substrate W can be measured at a plurality of locations in the circumferential direction of the substrate W.
  • the electrometer 72 may be fixed to the claw portion 21 or may rotate together with the substrate W. When the electrometer 72 rotates together with the substrate W, the electrometer 72 wirelessly transmits measurement data to the control unit 90 .
  • the electrometer 72 may be moved toward and away from the claw portion 21 so as not to rotate together with the substrate W.
  • the electrometer 72 is separated from the claw portion 21 while the substrate W is rotating.
  • the electrometer 72 is brought into contact with the claw portion 21.
  • the electrometer 72 measures the potential at the outer periphery of the upper surface Wa of the substrate.
  • the electrometer 72 can transmit measurement data to the control unit 90 by wire.
  • the electrometer 72 may be provided between the claw portion 21 and the substrate W, and may contact the outer peripheral portion of the substrate W. In this case, the electrometer 72 is rotated together with the substrate W. Therefore, in this case, the electrometer 72 transmits the measurement data to the control unit 90 wirelessly.
  • Substrate processing apparatus 20 Substrate holding section 33 Drying liquid supply section (second processing liquid supply section) 34 Second rinsing liquid supply section (first processing liquid supply section) L2 Rinse liquid (first treatment liquid) L3 Drying liquid (second processing liquid)

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  • Manufacturing & Machinery (AREA)
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PCT/JP2023/017891 2022-05-26 2023-05-12 基板処理装置、および基板処理方法 WO2023228776A1 (ja)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186633A (ja) * 2002-12-06 2004-07-02 Shimada Phys & Chem Ind Co Ltd 平板状被処理物の処理装置および処理方法
JP2008016660A (ja) * 2006-07-06 2008-01-24 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2010140966A (ja) * 2008-12-09 2010-06-24 Shibaura Mechatronics Corp 基板の帯電除去装置及び帯電除去方法
JP2011222886A (ja) * 2010-04-14 2011-11-04 Panasonic Corp 基板洗浄方法及び基板洗浄装置
JP2014194965A (ja) * 2013-03-28 2014-10-09 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2019046869A (ja) * 2017-08-30 2019-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186633A (ja) * 2002-12-06 2004-07-02 Shimada Phys & Chem Ind Co Ltd 平板状被処理物の処理装置および処理方法
JP2008016660A (ja) * 2006-07-06 2008-01-24 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2010140966A (ja) * 2008-12-09 2010-06-24 Shibaura Mechatronics Corp 基板の帯電除去装置及び帯電除去方法
JP2011222886A (ja) * 2010-04-14 2011-11-04 Panasonic Corp 基板洗浄方法及び基板洗浄装置
JP2014194965A (ja) * 2013-03-28 2014-10-09 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2019046869A (ja) * 2017-08-30 2019-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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