TW202343648A - EFEM system and gas supply method in EFEM system - Google Patents

EFEM system and gas supply method in EFEM system Download PDF

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TW202343648A
TW202343648A TW112112454A TW112112454A TW202343648A TW 202343648 A TW202343648 A TW 202343648A TW 112112454 A TW112112454 A TW 112112454A TW 112112454 A TW112112454 A TW 112112454A TW 202343648 A TW202343648 A TW 202343648A
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internal space
efem
inert gas
dry air
supply path
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河合俊宏
小倉源五郎
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日商昕芙旎雅股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices

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Abstract

The invention provides an EFEM system and a gas supply method in the EFEM system. On the condition that the atmosphere of the inner space of the EFEM is replaced by non-active gas, the supplying amount of the non-active gas required for humidity reduction of the inner space after opening to atmosphere is reduced. The EFEM system comprises a non-active gas supplying channel (61) which can supply nitrogen to the inner space (40) of the EFEM (1); a first switching part (63) which performs switching between a state of supplying the non-active gas to the inner space (40) from the non-active gas supplying channel (61) and a state of performing no supplying; a dry air supplying channel (71) which supplies dry air to the inner space (40); and a second switching part (73) which performs switching between a state of supplying the dry air from the dry air supplying channel (71) to the inner space (40) and a state of performing no supplying.

Description

ＥＦＥＭ系統及ＥＦＥＭ系統之氣體供給方法EFEM system and gas supply method of EFEM system

本發明係有關經由以非活性氣體而置換EFEM內部空間的環境氣，而將內部空間的氧濃度及濕度維持為目標值以下的EFEM系統，及該EFEM系統之氣體供給方法。The present invention relates to an EFEM system that maintains the oxygen concentration and humidity in the internal space below target values by replacing the ambient air in the internal space of the EFEM with an inert gas, and a gas supply method for the EFEM system.

自以往，知道有在收納晶圓之FOUP(Front-Opening Unified Pod)，和對於晶圓施以特定的處理之基板處理裝置之間，為了授受晶圓之EFEM(Equipment Front End Module)。近年，半導體元件的微細化進展著，而不僅存在於EFEM之內部空間的灰塵，氧或水分的影響亦不可錯過。因此，在記載於專利文獻1之EFEM之中，經由密閉EFEM的內部空間之同時，以氮(非活性氣體)而置換內部空間的環境氣之時，自內部空間除去氧或水分。因當大量消耗氮時，運行成本變高之故，在專利文獻1中，經由在內部空間而使氮循環之時，抑制氮的消耗。 [先前技術文獻] [專利文獻] Conventionally, it has been known that there is an EFEM (Equipment Front End Module) for transferring wafers between a FOUP (Front-Opening Unified Pod) that stores wafers and a substrate processing device that performs specific processing on the wafers. In recent years, the miniaturization of semiconductor devices has been progressing, and the influence of not only dust but also oxygen or moisture existing in the internal space of EFEM cannot be ignored. Therefore, in the EFEM described in Patent Document 1, oxygen and moisture are removed from the internal space by sealing the internal space of the EFEM and replacing the ambient air in the internal space with nitrogen (inert gas). When a large amount of nitrogen is consumed, the running cost becomes high. According to Patent Document 1, the consumption of nitrogen is suppressed when nitrogen is circulated through the internal space. [Prior technical literature] [Patent Document]

[專利文獻1] 日本特開2015-146349號公報[Patent Document 1] Japanese Patent Application Publication No. 2015-146349

[發明欲解決之課題][Problem to be solved by the invention]

但在專利文獻1之EFEM中，例如，在維護時一旦大氣開放內部空間時，對於之後將氧濃度或濕度降低至目標值，必須供給大量的非活性氣體(氮)，而運行成本則依然為高。特別是在大氣開放時，大氣中的水分則吸附於EFEM內的裝置或配線等之故，對於將濕度下降至目標值，而必須要大量的非活性氣體。However, in the EFEM of Patent Document 1, for example, once the internal space is opened to the atmosphere during maintenance, a large amount of inert gas (nitrogen) must be supplied to subsequently reduce the oxygen concentration or humidity to the target value, and the running cost remains high. Especially when the atmosphere is open, moisture in the atmosphere is adsorbed on the devices and wiring within the EFEM. Therefore, a large amount of inert gas is required to reduce the humidity to the target value.

本發明係有鑑於上述情事所作為之構成，而其目的為削減對於將大氣開放之EFEM之內部空間的濕度降低至目標值時成為必要之非活性氣體的供給量者。 [為了解決課題之手段] The present invention is constructed in view of the above-mentioned circumstances, and its object is to reduce the supply amount of inert gas necessary to reduce the humidity of the internal space of an EFEM open to the atmosphere to a target value. [To solve the problem]

有關本發明之EFEM系統，係經由以非活性氣體而置換EFEM之內部空間的環境氣之時，將前述內部空間的氧濃度及濕度維持為目標值以下之EFEM系統，其特徵為具備：可供給前述非活性氣體於前述內部空間的非活性氣體供給路徑，和切換成自前述非活性氣體供給路徑，供給前述非活性氣體於前述內部空間的狀態與未供給之狀態的第1切換部，和可供給乾燥空氣於前述內部空間之乾燥空氣供給路徑，和切換成自前述乾燥空氣供給路徑，供給前述乾燥空氣於前述內部空間的狀態與未供給之狀態的第2切換部者。The EFEM system of the present invention is an EFEM system that maintains the oxygen concentration and humidity in the internal space below target values by replacing the ambient air in the internal space of the EFEM with inert gas. It is characterized by: being able to supply an inert gas supply path for the inert gas in the internal space; and a first switching unit capable of switching between a state in which the inert gas is supplied to the internal space and a state in which the inert gas is not supplied from the inert gas supply path; and A dry air supply path that supplies dry air to the internal space, and a second switching unit that switches between a state where the dry air is supplied to the internal space and a state where the dry air is not supplied from the dry air supply path.

如根據具有如此構成之EFEM系統，經由於大氣開放之EFEM的內部空間，取代非活性氣體而供給乾燥空氣之時，可降低內部空間的濕度者。隨之，可削減對於將內部空間的濕度下降至目標值而成為必要之非活性氣體的供給量者。According to the EFEM system having such a structure, when dry air is supplied instead of inert gas through the internal space of the EFEM that is open to the atmosphere, the humidity of the internal space can be reduced. Accordingly, the supply amount of the inert gas necessary to reduce the humidity of the internal space to the target value can be reduced.

有關本發明之EFEM系統，係更具備：測定前述內部空間的濕度之濕度計，和控制前述第1切換部及前述第2切換部之控制部；前述控制部係在密閉大氣開放之前述內部空間之後，自前述乾燥空氣供給路徑，供給前述乾燥空氣於前述內部空間，前述內部空間的濕度則下降至特定值時，停止前述乾燥空氣的供給，再自前述非活性氣體供給路徑，供給前述非活性氣體即可。The EFEM system according to the present invention further includes: a hygrometer for measuring the humidity of the internal space, and a control unit for controlling the first switching unit and the second switching unit; the control unit operates in the internal space before the airtight atmosphere is opened. Thereafter, the dry air is supplied from the dry air supply path to the internal space. When the humidity of the internal space drops to a specific value, the supply of the dry air is stopped, and the inert gas is supplied from the inert gas supply path. Just gas.

如此，在經由乾燥空氣而將內部空間的濕度，下降某種程度之後，如作為呈供給非活性氣體時，可有效果地削減對於將濕度降低至目標值而成為必要之非活性氣體的供給量者。In this way, after the humidity of the internal space has been reduced to a certain extent by using dry air, when an inert gas is supplied as the present invention, the supply amount of the inert gas necessary to reduce the humidity to the target value can be effectively reduced. By.

有關本發明之EFEM系統，前述控制部係在大氣開放前述內部空間之間，自前述乾燥空氣供給路徑，供給前述乾燥空氣於前述內部空間即可。Regarding the EFEM system of the present invention, the control unit is configured to open the internal space to the atmosphere and supply the dry air to the internal space from the dry air supply path.

在經由維護等而大氣開放內部空間之間，經由將乾燥空氣供給至內部空間之時，運算子可安全地進行作業之同時，可抑制內部空間的濕度上升者。因此，可減少在大氣開放後殘存於內部空間之水分，可縮短對於將濕度降低至目標值所需的時間。隨之，可使EFEM之稼動率提升。By supplying dry air to the internal space before the internal space is opened to the atmosphere for maintenance, etc., the operator can safely perform operations while suppressing an increase in humidity in the internal space. Therefore, the moisture remaining in the internal space after the atmosphere is opened can be reduced, and the time required to reduce the humidity to the target value can be shortened. Subsequently, the utilization rate of EFEM can be increased.

有關本發明之EFEM系統，於前述乾燥空氣供給路徑，加以設置為了更將前述乾燥空氣進行除濕之除濕過濾器即可。Regarding the EFEM system of the present invention, a dehumidification filter for further dehumidifying the dry air may be provided in the dry air supply path.

由設置如此之除濕過濾器者，因可供給更低濕度之乾燥空氣之故，可經由乾燥空氣而有效率地降低內部空間的濕度者。By providing such a dehumidification filter, dry air with lower humidity can be supplied, so that the humidity of the internal space can be effectively reduced through the dry air.

有關本發明之EFEM系統，前述非活性氣體供給路徑係作為前述非活性氣體而供給氮的構成，而更具備：自前述乾燥空氣供給路徑分歧的分歧路徑，和設置於前述分歧路徑，自前述乾燥空氣除去氮，提高氮濃度之氮富化過濾器，和切換前述乾燥空氣通過前述乾燥空氣供給路徑，或通過前述分歧路徑之第3切換部即可。In the EFEM system of the present invention, the inert gas supply path is configured to supply nitrogen as the inert gas, and further includes: a branch path branched from the dry air supply path, and a branch path provided in the branch path from the drying air supply path. It is sufficient to use a nitrogen enrichment filter to remove nitrogen from the air and increase the nitrogen concentration, and to switch the dry air through the dry air supply path or through the third switching part of the branch path.

如根據如此之構成，因可將低濕度且低氧濃度之乾燥空氣供給至內部空間之故，在供給乾燥空氣至內部空間而降低濕度時，同時亦可降低氧濃度者。隨之，可更有效果地削減對於將氧濃度及濕度下降至目標值而成為必要之非活性氣體的供給量者。With this structure, dry air with low humidity and low oxygen concentration can be supplied to the internal space. When dry air is supplied to the internal space to reduce the humidity, the oxygen concentration can also be reduced at the same time. Accordingly, the supply amount of the inert gas necessary to reduce the oxygen concentration and humidity to the target values can be more effectively reduced.

有關本發明之EFEM系統的氣體供給方法，係經由以非活性氣體而置換EFEM之內部空間的環境氣之時，將前述內部空間的氧濃度及濕度維持成目標值以下之EFEM系統的氣體供給方法，其特徵為具備：在密閉大氣開放之前述內部空間之後，將乾燥空氣供給至前述內部空間的乾燥空氣供給工程，和當前述內部空間的濕度降低至特定值時，停止前述乾燥空氣的供給，供給前述非活性氣體之非活性氣體供給工程者。The gas supply method of the EFEM system of the present invention is a gas supply method of the EFEM system that maintains the oxygen concentration and humidity in the internal space below target values while replacing the ambient air in the internal space of the EFEM with an inert gas. , characterized by having: a dry air supply process for supplying dry air to the internal space after the airtight atmosphere is opened to the internal space; and when the humidity of the internal space decreases to a specific value, stopping the supply of the dry air, An inert gas supply project that supplies the aforementioned inert gas.

如此，在經由乾燥空氣而將內部空間的濕度，下降某種程度之後，如作為呈供給非活性氣體時，可有效果地削減對於將濕度降低至目標值而成為必要之非活性氣體的供給量者。In this way, after the humidity of the internal space has been reduced to a certain extent by using dry air, when an inert gas is supplied as the present invention, the supply amount of the inert gas necessary to reduce the humidity to the target value can be effectively reduced. By.

有關本發明之EFEM系統的氣體供給方法，在大氣開放前述內部空間之間，供給前述乾燥空氣於前述內部空間即可。Regarding the gas supply method of the EFEM system of the present invention, the dry air is supplied to the internal space while the internal space is open to the atmosphere.

在經由維護等而大氣開放內部空間之間，經由將乾燥空氣供給至內部空間之時，運算子可安全地進行作業之同時，可抑制內部空間的濕度上升者。因此，可減少在大氣開放後殘存於內部空間之水分，可縮短對於將濕度降低至目標值所需的時間。隨之，可使EFEM之稼動率提升。By supplying dry air to the internal space before the internal space is opened to the atmosphere for maintenance, etc., the operator can safely perform operations while suppressing an increase in humidity in the internal space. Therefore, the moisture remaining in the internal space after the atmosphere is opened can be reduced, and the time required to reduce the humidity to the target value can be shortened. Subsequently, the utilization rate of EFEM can be increased.

對於本發明之實施形態，參照圖面之同時加以說明。然而，說明的方便上，將圖1所示之方向作為前後左右方向。即，將排列EFEM(Equipment Front End Module)1與基板處理裝置6的方向作為前後方向。將EFEM1側作為前方，而將基板處理裝置6側作為後方。與前後方向正交，排列複數之裝載埠4之方向作為左右方向。另外，與前後方向及左右方向的雙方正交之方向作為上下方向。Embodiments of the present invention will be described with reference to the drawings. However, for the convenience of explanation, the direction shown in Figure 1 is regarded as the front, rear, left and right directions. That is, the direction in which the EFEM (Equipment Front End Module) 1 and the substrate processing apparatus 6 are arranged is regarded as the front-rear direction. Let the EFEM 1 side be the front and the substrate processing apparatus 6 side be the rear. The direction in which a plurality of loading ports 4 are arranged is orthogonal to the front-to-back direction and serves as the left-right direction. In addition, the direction orthogonal to both the front-rear direction and the left-right direction is defined as the up-down direction.

(EFEM及周邊的概略構成) 首先，對於EFEM 1及其周邊的概略構成，使用圖1而加以說明。圖1係有關本實施形態之EFEM 1及其周邊的概略性平面圖。如圖1所示，EFEM 1係具備：框體2，和搬送機器手臂3，和複數的裝載埠4。對於EFEM1之後方係配置有對於晶圓W施以特定處裡之基板處理裝置6。EFEM 1係經由配置於框體2內之搬送機器手臂3，在載置於裝載埠4之FOUP(Front-Opening Unified Pod)100與基板處理裝置6之間，進行晶圓W的授受。 (Schematic structure of EFEM and surrounding areas) First, the schematic configuration of the EFEM 1 and its surroundings will be described using FIG. 1 . FIG. 1 is a schematic plan view of the EFEM 1 and its surroundings according to this embodiment. As shown in Figure 1, the EFEM 1 series is equipped with a frame 2, a transport robot arm 3, and a plurality of loading ports 4. Behind the EFEM 1 is a substrate processing device 6 that performs specific processing on the wafer W. The EFEM 1 transfers the wafer W between the FOUP (Front-Opening Unified Pod) 100 placed in the loading port 4 and the substrate processing apparatus 6 via the transfer robot 3 arranged in the housing 2 .

FOUP 100係排列複數之晶圓W於上下方向而可收容之容器，而安裝有蓋101於後端部(在前後方向之框體2側的端部)。FOUP 100係例如垂釣於設置在裝載埠4上方之未圖示之軌道而行走，經由未圖示之OHT(天頂行走式無人搬送車)而加以搬送。在OHT與裝載埠4之間，進行FOUP 100之授受。The FOUP 100 is a container that can accommodate a plurality of wafers W arranged in the up-down direction, and has a cover 101 attached to the rear end (the end on the frame 2 side in the front-rear direction). For example, the FOUP 100 runs on a track (not shown) provided above the loading port 4, and is transported via an OHT (overhead traveling unmanned transport vehicle) (not shown). Between OHT and load port 4, FOUP 100 is exchanged.

框體2係為了連接複數的裝載埠4與基板處理裝置6之構成。對於框體2之內部係形成有對於外部空間而言作為略密閉，搬送晶圓W的搬送室41。當EFEM1稼動時，搬送室41係以氮而加以填充。框體2係呈氮循環在包含搬送室41之內部空間地加以構成(對於詳細係後述之)。另外，對於框體2之後端部係安裝有門2a，而搬送室41係隔著門2a而與基板處理裝置6連接。The housing 2 is configured to connect a plurality of loading ports 4 and the substrate processing apparatus 6 . A transfer chamber 41 for transferring the wafer W is formed inside the housing 2 in a manner that is slightly sealed from the outside space. When EFEM1 is activated, the transfer chamber 41 is filled with nitrogen. The frame 2 is configured to circulate nitrogen in an internal space including the transfer chamber 41 (details will be described later). In addition, a door 2a is attached to the rear end of the frame 2, and the transfer chamber 41 is connected to the substrate processing apparatus 6 via the door 2a.

搬送機器手臂3係配置於搬送室41內，進行晶圓W的搬送。搬送機器手臂3係主要進行取出FOUP 100內之晶圓W而交付至基板處理裝置6之動作，或接受經由基板處理裝置6所處理之晶圓W而返回至FOUP 100之動作。The transfer robot arm 3 is disposed in the transfer chamber 41 and transfers the wafer W. The transfer robot arm 3 mainly performs the action of taking out the wafer W from the FOUP 100 and delivering it to the substrate processing device 6 , or receiving the wafer W processed by the substrate processing device 6 and returning it to the FOUP 100 .

裝載埠4係為了載置FOUP 100之構成。複數之裝載埠4係各後端部則呈沿著框體2之前側的隔壁地，排列配置於左右方向。裝載埠4係可置換FOUP 100內之環境氣為氮等之非活性氣體地加以構成。對於裝載埠4之後端部係設置有門4a。門4a係經由未圖示的門開閉機構而加以開閉。門4a係可解除FOUP 100的蓋101的鎖，且可保持蓋101地加以構成。在門4a保持解除鎖的蓋101之狀態，由門移動機構則開啟門4a者，開啟蓋101。經由此，FOUP 100內之晶圓W則成為可經由搬送機器手臂3而取出。Load port 4 is configured to load FOUP 100. The rear end portions of the plurality of loading ports 4 are arranged in a row along the partition wall on the front side of the frame 2 in the left and right direction. The loading port 4 is configured to replace the ambient gas in the FOUP 100 with inert gas such as nitrogen. For the rear end of the loading port 4 a door 4a is provided. The door 4a is opened and closed via a door opening and closing mechanism (not shown). The door 4a is configured to unlock the cover 101 of the FOUP 100 and hold the cover 101. When the door 4a is opened with the lid 101 unlocked and the door 4a is opened by the door moving mechanism, the lid 101 is opened. Through this, the wafer W in the FOUP 100 can be taken out via the transfer robot arm 3 .

控制裝置5係與設置於框體2內，更詳細係搬送室41內之氧濃度計55，壓力計56，濕度計57(參照圖3)而加以電性連接。控制裝置5係收訊此等計測機器的計測結果，把握有關框體2內之環境氣的資訊，再依據此等而適宜調節框體2之內部空間的環境氣。對於氣體供給控制係在之後詳細說明。The control device 5 is electrically connected to the oxygen concentration meter 55, the pressure meter 56, and the hygrometer 57 (see FIG. 3) installed in the housing 2, more specifically, in the transfer chamber 41. The control device 5 receives the measurement results of these measurement machines, grasps information about the ambient air in the frame 2, and then appropriately adjusts the ambient air in the internal space of the frame 2 based on this. The gas supply control system will be described in detail later.

基板處理裝置6係例如，具有加載互鎖真空室6a，和處理室6b。加載互鎖真空室6a係隔著框體2的門2a而與搬送室41加以連接，為了暫時使晶圓W待機的室。處理室6b係隔著門6c而與加載互鎖真空室6a加以連接。在處理室6b中，經由未圖示之處理機構，對於晶圓W施以特定的處理。The substrate processing apparatus 6 has, for example, a load lock vacuum chamber 6a and a processing chamber 6b. The load lock vacuum chamber 6a is connected to the transfer chamber 41 via the door 2a of the housing 2, and is a chamber for temporarily waiting for the wafer W. The processing chamber 6b is connected to the load lock vacuum chamber 6a via the door 6c. In the processing chamber 6b, specific processing is performed on the wafer W via a processing mechanism (not shown).

(EFEM之詳細構成) 接著，對於框體2及其內部的構成，使用圖2加以說明。圖2係有關本實施形態之EFEM 1之剖面圖。然而，在圖2中，省略搬送機器手臂3等之圖示。 (Detailed composition of EFEM) Next, the frame 2 and its internal structure will be described using FIG. 2 . Fig. 2 is a cross-sectional view of the EFEM 1 according to this embodiment. However, in FIG. 2 , illustration of the transport robot arm 3 and the like is omitted.

框體2係經由底壁31，天頂壁32，前壁33，後壁34，右壁(省略圖示)，及左壁(省略圖示)而加以密閉，作為全體而為長方體狀之構造體。框體2之內部空間係經由延伸於水平方向之支持板37，分為下側之搬送室41，和上側之FFU設置室42。前壁33係分割為面對搬送室41的下蓋33a，和面對於FFU設置室42之上蓋33b。同樣地，後壁34係分割為面對搬送室41的下蓋34a，和面對於FFU設置室42之上蓋34b。對於未圖示之右壁及左壁，亦成為同樣的構成。The frame 2 is sealed through a bottom wall 31, a ceiling wall 32, a front wall 33, a rear wall 34, a right wall (illustration omitted), and a left wall (illustration omitted), and is a rectangular parallelepiped-shaped structure as a whole. . The internal space of the frame 2 is divided into a lower transfer chamber 41 and an upper FFU installation chamber 42 via a support plate 37 extending in the horizontal direction. The front wall 33 is divided into a lower cover 33a facing the transfer chamber 41 and an upper cover 33b facing the FFU installation chamber 42. Similarly, the rear wall 34 is divided into a lower cover 34a facing the transfer chamber 41 and an upper cover 34b facing the FFU installation chamber 42. The right wall and the left wall (not shown in the figure) also have the same configuration.

蓋體33a、33b、34a、34b等之各蓋體係對於構成框體2之未圖示的框體而言拆裝自由地加以構成。由安裝各蓋體者，框體2之內部空間則作為密閉狀態。另一方面，由拆除各蓋體者，開放框體2之內部空間，可進行維護等者。Each lid system such as the lids 33a, 33b, 34a, 34b, etc. is configured to be detachable from the frame (not shown) constituting the frame 2. By installing each cover, the internal space of the frame 2 is in a sealed state. On the other hand, by removing each cover, the internal space of the frame 2 is opened and maintenance can be performed.

對於FFU設置室42係設置有配置於支持板37上之FFU(風扇過濾單元)44，和配置於FFU 44上之化學過濾器45。FFU 44係具有風扇44a與過濾器44b。FFU 44係經由風扇44a而生成朝向下方的氣流，經由過濾器44b而除去含於氣流之灰塵。化學過濾器45係例如，為了除去自基板處理裝置6帶入於EFEM 1內之活性氣體等之構成。經由FFU 44及化學過濾器45所清淨化的氣流則自FFU設置室42，藉由形成於支持板37之開口37a而送出於搬送室41。送出於搬送室41的氣流係形成層流，流動於下方。The FFU installation chamber 42 is provided with an FFU (fan filter unit) 44 arranged on the support plate 37 and a chemical filter 45 arranged on the FFU 44 . The FFU 44 system has a fan 44a and a filter 44b. The FFU 44 generates downward airflow through the fan 44a, and removes dust contained in the airflow through the filter 44b. The chemical filter 45 is configured, for example, to remove active gas and the like introduced into the EFEM 1 from the substrate processing apparatus 6 . The air flow cleaned by the FFU 44 and the chemical filter 45 is sent from the FFU installation chamber 42 to the transfer chamber 41 through the opening 37 a formed in the support plate 37 . The air flow sent out of the transfer chamber 41 forms a laminar flow and flows downward.

對於EFEM 1(框體2)之內部空間40係形成有為了使氮循環的循環路徑。此循環路徑係自FFU設置室42送出於下方的氮則呈自搬送室41之下端部歷經返還路徑43而返回至FFU設置室42地加以構成(參照圖2之箭頭)。返還路徑43係形成於柱23，導入導管27，及支持板37。柱23係亦作為框體2之構造構件而使用，而於內部形成有中空空間23a。對於柱23之下端部係安裝有導入導管27。形成於導入導管27內之導入路徑27a係與柱23之中空空間23a連通。另外，對於支持板37係形成有連接柱23之中空空間23a與FFU設置室42的流路37b。返還路徑43係具有連結導入導管27之導入路徑27a，和柱23之中空空間23a，和支持板37之流路37b的構成。A circulation path for circulating nitrogen is formed in the internal space 40 of the EFEM 1 (casing 2). This circulation path is configured so that nitrogen sent from the lower end of the FFU installation chamber 42 returns to the FFU installation chamber 42 through the return path 43 from the lower end of the transfer chamber 41 (see the arrow in FIG. 2 ). The return path 43 is formed in the column 23, the introduction duct 27, and the support plate 37. The column 23 is also used as a structural member of the frame 2, and a hollow space 23a is formed inside. An introduction conduit 27 is installed at the lower end of the column 23 . The introduction path 27a formed in the introduction duct 27 communicates with the hollow space 23a in the column 23. In addition, the support plate 37 is formed with a flow path 37 b connecting the hollow space 23 a in the column 23 and the FFU installation chamber 42 . The return path 43 has a structure including an introduction path 27a connecting the introduction duct 27, the hollow space 23a in the column 23, and the flow path 37b of the support plate 37.

對於導入導管27內係配置有風扇46。當驅動風扇46時，將到達至搬送室41之下端部的氮，吸入於返還路徑43而送出於上方，再返回至FFU設置室42。返回至FFU設置室42的氮係經由FFU 44或化學過濾器45而加以清淨化，再次送出於搬送室41。由以上作為，氮則成為可循環在EFEM 1之內部空間40。A fan 46 is arranged inside the introduction duct 27 . When the fan 46 is driven, nitrogen that has reached the lower end of the transfer chamber 41 is sucked into the return path 43 and sent upward, and then returned to the FFU installation chamber 42 . The nitrogen returned to the FFU installation chamber 42 is purified through the FFU 44 or the chemical filter 45 and is sent out of the transfer chamber 41 again. As a result of the above, nitrogen can be circulated in the internal space 40 of the EFEM 1 .

EFEM 1係內部空間40則作為氮環境之故，為了維護等而突然開啟蓋，開放內部空間40時，而有運算子引起窒息之虞。為了避免此，對於EFEM 1係設置有連鎖機構58(參照圖3)。當控制裝置5將連鎖機構58解鎖時，可開啟框體2的蓋體，但將連鎖機構58上鎖時係無法開啟蓋體。Since the internal space 40 of the EFEM 1 series is a nitrogen environment, there is a risk of operator suffocation if the cover is suddenly opened for maintenance, etc., and the internal space 40 is opened. In order to avoid this, the EFEM 1 series is provided with a locking mechanism 58 (see FIG. 3 ). When the control device 5 unlocks the interlocking mechanism 58, the cover of the frame 2 can be opened, but when the interlocking mechanism 58 is locked, the cover cannot be opened.

(氣體供給控制) 在如以上所構成之EFEM 1中，經由以氮而置換內部空間40之環境氣之時，可將內部空間40(特別是搬送室41)的氧濃度及濕度維持成目標值以下。在本實施形態中，氧濃度的目標值則作為100ppm，而作為濕度的目標值，將露點溫度作為設定為-70℃者。當然，此等目標值係可作適宜變更，而亦可以露點溫度以外的指標而設定濕度的目標值。 (gas supply control) In the EFEM 1 configured as above, by replacing the ambient air in the internal space 40 with nitrogen, the oxygen concentration and humidity in the internal space 40 (especially the transfer chamber 41) can be maintained below the target value. In this embodiment, the target value of the oxygen concentration is set to 100 ppm, and the target value of the humidity is set to -70° C. for the dew point temperature. Of course, these target values can be changed appropriately, and the target value of humidity can also be set with indicators other than dew point temperature.

圖3係顯示為了進行氣體供給控制之EFEM系統10的構成之模式圖。EFEM系統10係經由EFEM 1，和為了供給及排出氣體於EFEM 1之各手段而加以構成。對於EFEM 1係連接有氮供給路徑61，而自設置於設施之氮供給源62，藉由氮供給路徑61而供給氮於EFEM 1之內部空間40。對於氮供給路徑61係設置有閥63，而控制裝置5則由控制閥63之開度者，加以調整氮的供給量。FIG. 3 is a schematic diagram showing the structure of the EFEM system 10 for gas supply control. The EFEM system 10 is composed of the EFEM 1 and various means for supplying and exhausting gas to the EFEM 1 . A nitrogen supply path 61 is connected to the EFEM 1, and nitrogen is supplied to the internal space 40 of the EFEM 1 through the nitrogen supply path 61 from a nitrogen supply source 62 installed in the facility. The nitrogen supply path 61 is provided with a valve 63, and the control device 5 controls the opening of the valve 63 to adjust the supply amount of nitrogen.

另外，對於EFEM 1係連接有CDA(Clean Dry Air：乾燥空氣)供給路徑71，而自設置於設施之CDA供給源72，藉由CDA供給路徑71而供給CDA於EFEM 1之內部空間40。對於CDA供給路徑71係設置有閥73，而控制裝置5則由控制閥73之開度者，加以調整CDA的供給量。對於CDA供給路徑71係更設置有除濕過濾器74。經由除濕過濾器74而更加除濕自CDA供給源72所供給之CDA之時，可供給更低濕度之CDA者。然而，在圖3中，記載著在途中將氮供給路徑61與CDA供給路徑71合流之構成，但將氮供給路徑61及CDA供給路徑71各個別地連接於EFEM 1之構成亦可。In addition, a CDA (Clean Dry Air) supply path 71 is connected to the EFEM 1, and CDA is supplied to the internal space 40 of the EFEM 1 through the CDA supply path 71 from a CDA supply source 72 installed in the facility. The CDA supply path 71 is provided with a valve 73, and the control device 5 controls the opening of the valve 73 to adjust the supply amount of CDA. The CDA supply path 71 is further provided with a dehumidification filter 74 . When the CDA supplied from the CDA supply source 72 is further dehumidified through the dehumidification filter 74, CDA with a lower humidity can be supplied. However, in FIG. 3 , the structure in which the nitrogen supply path 61 and the CDA supply path 71 are merged is described, but the nitrogen supply path 61 and the CDA supply path 71 may be connected to the EFEM 1 separately.

更且，對於EFEM 1係連接有排氣路徑81，而可自EFEM1之內部空間40排出氣體者。對於排氣路徑81係設置有閥82，而控制裝置5則由控制閥82之開度者，加以調整氣體的排出量。Furthermore, the EFEM 1 is connected to an exhaust path 81 so that gas can be exhausted from the internal space 40 of the EFEM 1 . The exhaust path 81 is provided with a valve 82, and the control device 5 controls the opening of the valve 82 to adjust the amount of gas discharged.

在如此所構成之EFEM系統10中，對於EFEM 1之通常稼動時(晶圓W之搬送時)，係未供給CDA於內部空間40，而加以供給氮。控制裝置5係作為成保持關閉閥73，因應來自氧濃度計55及濕度計(露點溫度計)57之輸出而控制閥63的開度。由如此作為而調整對於內部空間40之氮的供給量者，將各內部空間40之氧濃度及露點溫度維持為目標值以下。In the EFEM system 10 configured in this way, during the normal operation of the EFEM 1 (during the transfer of the wafer W), CDA is not supplied to the internal space 40 but nitrogen is supplied. The control device 5 serves as a closed valve 73 and controls the opening of the valve 63 in response to outputs from the oxygen concentration meter 55 and the hygrometer (dew point thermometer) 57 . By adjusting the supply amount of nitrogen to the internal spaces 40 in this way, the oxygen concentration and dew point temperature of each internal space 40 are maintained below the target value.

另外，對於EFEM 1之通常稼動時，EFEM 1之內部空間40的壓力則維持為較大氣壓稍微高之微陽壓。經由此，防止自EFEM 1之外部，空氣流入至內部空間40者。控制裝置5係因應來自壓力計56之輸出而控制閥82之開度。由如此作為而調整自內部空間40之氣體的排出量者，將內部空間40之壓力維持為微陽壓。具體而言係1Pa(G)~3000Pa(G)之範圍內，而理想為3Pa(G)~500Pa(G)、更理想為5Pa(G)~100Pa(G)。在本實施形態中，呈成為10Pa(G)之差壓進行調整。In addition, during normal operation of EFEM 1, the pressure in the internal space 40 of EFEM 1 is maintained at a slight positive pressure slightly higher than the maximum atmospheric pressure. This prevents air from outside the EFEM 1 from flowing into the internal space 40 . The control device 5 controls the opening of the valve 82 in response to the output from the pressure gauge 56 . By adjusting the discharge amount of gas from the internal space 40 in this way, the pressure of the internal space 40 is maintained at a slight positive pressure. Specifically, it is in the range of 1Pa(G)~3000Pa(G), and ideally it is 3Pa(G)~500Pa(G), and more preferably 5Pa(G)~100Pa(G). In this embodiment, the pressure difference is adjusted to 10 Pa (G).

(維護時之氣體供給控制) 對於在維護等，開放EFEM 1之內部空間40時，或在維護等之結束後，將EFEM 1之內部空間40返回至氮環境氣時，係進行與通常稼動時不同之控制。圖4係顯示維護時之氣體供給控制之流程圖。當輸入經由運算子而進行維護之內容的信號時，控制裝置5係關閉閥63之同時，開啟閥73，開始供給CDA於EFEM 1之內部空間40(步驟S11)。之後，內部空間40之氧濃度則成為特定值(例如，19.5%)以上(在步驟S12為YES)，當成為可完全地開放內部空間40之狀態時，控制裝置5係將連鎖機構58解鎖(步驟S13)。 (Gas supply control during maintenance) When the internal space 40 of the EFEM 1 is opened during maintenance, etc., or when the internal space 40 of the EFEM 1 is returned to the nitrogen atmosphere after the maintenance, etc., different controls are performed from those during normal operation. Figure 4 is a flow chart showing gas supply control during maintenance. When a signal indicating the content of maintenance is input through the operator, the control device 5 closes the valve 63 and opens the valve 73 to start supplying CDA to the internal space 40 of the EFEM 1 (step S11). After that, when the oxygen concentration of the internal space 40 becomes a specific value (for example, 19.5%) or above (YES in step S12), and the internal space 40 becomes a state that can be completely opened, the control device 5 unlocks the interlock mechanism 58 ( Step S13).

當連鎖機構58解鎖時，運算子係開啟EFEM 1之蓋體而開放內部空間40，進行必要的維護(步驟S14)。期間亦持續對於內部空間40之CDA的供給。經由此，可抑制在維護中，內部空間40之濕度上升者。當維護結束時，運算子係關閉EFEM 1之蓋體而將內部空間40作為成密閉狀態，對於控制裝置5輸入維護結束之內容。接受此等，控制裝置5係將連鎖機構58進行上鎖(步驟S15)。When the interlocking mechanism 58 is unlocked, the operator opens the cover of the EFEM 1 to open the internal space 40 and perform necessary maintenance (step S14). During this period, the supply of CDA for the internal space 40 was also continued. This can suppress an increase in humidity in the internal space 40 during maintenance. When the maintenance is completed, the operator closes the cover of the EFEM 1 to make the internal space 40 in a sealed state, and inputs the maintenance completion content to the control device 5 . Upon accepting this, the control device 5 locks the interlock mechanism 58 (step S15).

在密閉EFEM 1之內部空間40之後，亦持續對於內部空間40之CDA的供給。因經由CDA之供給而除去內部空間40之水分之故，露點溫度係下降，但內部空間40之氧濃度係與大氣幾乎保持相同。當內部空間40之露點溫度下降至特定值(例如，-50℃)時(在步驟S16為YES)，控制裝置5係關閉閥73之同時，開啟閥63，開始供給氮於內部空間40(步驟S17)。之後，當將各內部空間40之露點溫度及氧濃度降低至目標值時(-70℃、100ppm)(在步驟S18為YES)，再開啟EFEM1之通常稼働(步驟S19)。After the internal space 40 of the EFEM 1 is sealed, the supply of CDA to the internal space 40 is also continued. Since the moisture in the internal space 40 is removed through the supply of CDA, the dew point temperature decreases, but the oxygen concentration in the internal space 40 remains almost the same as that of the atmosphere. When the dew point temperature of the internal space 40 drops to a specific value (for example, -50°C) (YES in step S16), the control device 5 closes the valve 73 and at the same time opens the valve 63 to start supplying nitrogen to the internal space 40 (step S16). S17). After that, when the dew point temperature and oxygen concentration of each internal space 40 are reduced to the target values (-70° C., 100 ppm) (YES in step S18), the normal operation of EFEM1 is started again (step S19).

在此，將一旦大氣開放的EFEM 1之內部空間40的露點溫度下降至目標值係需要較將氧濃度下降至目標值為長的時間。雖說氧係如以氮進行置換而解決，但為了在進行大氣開放時，除去吸附於EFEM 1內之裝置或配線等之水分，係因有必要以大量的乾燥氣體(氮或CDA)而析出水分之必要之故。隨之，如本實施形態，如可以CDA僅使濕度(露點溫度)作某種程度降低，可大幅削減氮的供給量者。其結果，可抑制EFEM1之運行成本。然而，在本實施形態中，作成當露點溫度下降至較目標值(-70℃)為高的特定值(-50℃)時，停止CDA之供給而開始氮的供給者，但露點溫度下降至目標值之後，切換為氮的供給亦可。Here, it takes a longer time to reduce the dew point temperature of the internal space 40 of the EFEM 1 once the atmosphere is opened to the target value than to reduce the oxygen concentration to the target value. Although oxygen can be replaced by nitrogen, for example, in order to remove moisture adsorbed on devices or wiring within EFEM 1 when opening to the atmosphere, it is necessary to use a large amount of dry gas (nitrogen or CDA) to precipitate moisture. Because of necessity. Accordingly, as in this embodiment, if CDA can only reduce the humidity (dew point temperature) to a certain extent, the supply amount of nitrogen can be significantly reduced. As a result, the operating cost of EFEM1 can be suppressed. However, in this embodiment, when the dew point temperature drops to a specific value (-50°C) higher than the target value (-70°C), the supply of CDA is stopped and the supply of nitrogen is started. However, the dew point temperature drops to After reaching the target value, you may switch to nitrogen supply.

(效果) 有關本實施形態之EFEM系統10係經由以氮(非活性氣體)而置換EFEM 1之內部空間40的環境氣之時，將內部空間40的氧濃度及濕度(露點溫度)維持成目標值以下之構成，其中，具備：可供給氮於內部空間40之氮供給路徑61 (非活性氣體供給路徑)，和切換為自氮供給路徑61供給氮於內部空間40之狀態，與未供給之狀態的閥63(第1切換部)，和可供給CDA(乾燥空氣)於內部空間40之CDA供給路徑71(乾燥空氣供給路徑)，和切換為自CDA供給路徑71供給CDA於內部空間40之狀態，與未供給之狀態的閥73(第2切換部)。如根據具有如此構成之EFEM系統10，經由於大氣開放之EFEM 1的內部空間40，取代氮而供給CDA之時，可降低內部空間40的濕度者。隨之，可削減對於將內部空間40的濕度下降至目標值而成為必要之氮的供給量者。 (Effect) The EFEM system 10 of this embodiment maintains the oxygen concentration and humidity (dew point temperature) in the internal space 40 below target values by replacing the ambient air in the internal space 40 of the EFEM 1 with nitrogen (inert gas). The structure includes: a nitrogen supply path 61 (inert gas supply path) that can supply nitrogen to the internal space 40; and a valve that switches between a state in which nitrogen is supplied from the nitrogen supply path 61 to the internal space 40 and a state in which nitrogen is not supplied. 63 (first switching unit), and the CDA supply path 71 (dry air supply path) that can supply CDA (dry air) to the internal space 40, and switching to a state in which CDA is supplied from the CDA supply path 71 to the internal space 40, and Valve 73 (second switching part) in the unsupplied state. According to the EFEM system 10 having such a structure, when CDA is supplied instead of nitrogen through the internal space 40 of the EFEM 1 that is open to the atmosphere, the humidity of the internal space 40 can be reduced. Accordingly, the supply amount of nitrogen necessary to lower the humidity of the internal space 40 to the target value can be reduced.

在本實施形態中，控制裝置5(控制部)係作為呈在密閉大氣開放之內部空間40之後，自CDA供給路徑71供給CDA於內部空間40(相當於本發明之「乾燥空氣供給工程」)，內部空間40之濕度則降低至特定值時，停止CDA之供給，自氮供給路徑61供給氮(相當於本發明之「非活性氣體供給工程」)。如此，如作為呈在經由CDA而將內部空間40的濕度，下降某種程度之後，供給氮時，可有效果地削減對於將濕度降低至目標值而成為必要之非活性氣體的供給量者。In this embodiment, the control device 5 (control unit) is configured to supply CDA from the CDA supply path 71 to the internal space 40 after the internal space 40 is open to the airtight atmosphere (corresponding to the "dry air supply process" of the present invention) , when the humidity of the internal space 40 drops to a specific value, the supply of CDA is stopped and nitrogen is supplied from the nitrogen supply path 61 (equivalent to the "inert gas supply process" of the present invention). In this way, when nitrogen is supplied after the humidity of the internal space 40 has been reduced to a certain extent through CDA, the supply amount of the inert gas necessary to reduce the humidity to the target value can be effectively reduced.

在本實施形態中，控制裝置5係大氣開放內部空間40之間，自CDA供給路徑71供給CDA於內部空間40。如此，在經由維護等而大氣開放內部空間40之間，經由將CDA供給至內部空間40之時，運算子可安全地進行作業之同時，可抑制內部空間40的濕度上升者。因此，可減少在大氣開放後殘存於內部空間40之水分，可縮短對於將濕度降低至目標值所需的時間。隨之，可使EFEM 1之稼動率提升。In this embodiment, the control device 5 is located between the internal space 40 that is open to the atmosphere, and CDA is supplied from the CDA supply path 71 to the internal space 40 . In this way, when CDA is supplied to the internal space 40 before the internal space 40 is released to the atmosphere for maintenance or the like, the operator can safely perform operations while suppressing an increase in humidity in the internal space 40 . Therefore, the moisture remaining in the internal space 40 after the atmosphere is opened can be reduced, and the time required to reduce the humidity to the target value can be shortened. Subsequently, the utilization rate of EFEM 1 can be increased.

在本實施形態中，對於CDA供給路徑71，設置有為了更加將CDA除濕之除濕過濾器74。由設置如此之除濕過濾器74者，因可供給更低濕度之CDA之故，可經由CDA而有效率地降低內部空間40的濕度者。In this embodiment, the CDA supply path 71 is provided with a dehumidification filter 74 for further dehumidifying CDA. By providing such a dehumidification filter 74, CDA with lower humidity can be supplied, so that the humidity of the internal space 40 can be efficiently reduced through CDA.

(其他的實施形態) 對於上述實施形態加上種種變更之變更例，加以說明。 (Other embodiments) Modified examples in which various modifications are added to the above embodiment will be described.

(1)在上述實施形態中，作成控制裝置5，以自動控制閥63，73之構成。但，作為呈運算子則經由以手動開關閥63，73之時，進行氣體供給控制亦可。(1) In the above embodiment, the control device 5 is configured to automatically control the valves 63 and 73 . However, as an operator, the gas supply control may be performed by manually opening and closing the valves 63 and 73.

(2)在上述實施形態中，作成於CDA供給路徑71設置除濕過濾器74之構成。但，作為呈將除濕過濾器74設置於EFEM 1之內部空間40(例如，返還路徑43)亦可。另外，未必必須設置除濕過濾器74，而省略除濕過濾器74亦可。(2) In the above embodiment, the dehumidification filter 74 is provided in the CDA supply path 71 . However, the dehumidification filter 74 may be provided in the internal space 40 (for example, the return path 43) of the EFEM 1. In addition, the dehumidification filter 74 is not necessarily required, and the dehumidification filter 74 may be omitted.

(3)在上述實施形態中，作成在維護等，將EFEM 1之內部空間40進行大氣開放之間，供給CDA於內部空間40之構成。但，未必必須在將內部空間40進行大氣開放之間，供給CDA者。(3) In the above embodiment, CDA is supplied to the internal space 40 of the EFEM 1 when the internal space 40 of the EFEM 1 is opened to the atmosphere during maintenance or the like. However, it is not necessarily necessary to provide CDA before opening the internal space 40 to the atmosphere.

(4)如圖5所示，作為呈於EFEM 1之內部空間40，設置加熱器59亦可。由設置加熱器59者，可增大EFEM1內之飽和水蒸氣量，而容易使吸附於裝置或配線等之水分蒸發。其結果，可縮短將內部空間40之濕度下降至目標值所需之時間之同時，可削減乾燥氣體(氮或CDA)之消耗量者。當考慮到於許多裝置或配線等配置於框體2之底面時，將加熱器59設置於框體2之底面附近者為佳，但當然亦可設置於其他處。(4) As shown in FIG. 5 , a heater 59 may be provided in the internal space 40 of the EFEM 1 . By providing the heater 59, the amount of saturated water vapor in the EFEM 1 can be increased, and the moisture adsorbed on the device or wiring can be easily evaporated. As a result, the time required to reduce the humidity of the internal space 40 to the target value can be shortened, and the consumption of dry gas (nitrogen or CDA) can be reduced. When considering that many devices, wiring, etc. are arranged on the bottom surface of the frame 2, it is preferable to dispose the heater 59 near the bottom surface of the frame 2, but of course it can also be disposed elsewhere.

(5)如圖6所示，作為呈於CDA供給路徑71之途中，設置自CDA供給路徑71分歧之分歧路徑75，設置氮富化過濾器76於分歧路徑75亦可。氮富化過濾器76係自空氣除去氧而可提高氮濃度之過濾器。對於CDA供給路徑71與分歧路徑75之分歧部，係設置為了切換CDA通過CDA供給路徑71，或通過分歧路徑75之切換閥77(相當於本發明之「第3切換部」)。如根據如此之構成，因可將低濕度且低氧濃度之CDA供給至內部空間40之故，在供給CDA至內部空間40而降低濕度時，同時亦可降低氧濃度者。隨之，可更有效果地削減對於將氧濃度及濕度下降至目標值而成為必要之氮的供給量者。(5) As shown in FIG. 6 , a branch path 75 branched from the CDA supply path 71 may be provided in the middle of the CDA supply path 71 , and a nitrogen enrichment filter 76 may be provided in the branch path 75 . The nitrogen enrichment filter 76 is a filter that removes oxygen from the air to increase nitrogen concentration. A switching valve 77 (corresponding to the "third switching part" of the present invention) is provided at the bifurcated portion of the CDA supply path 71 and the branch path 75 to switch CDA through the CDA supply path 71 or through the branch path 75 . According to this structure, CDA with low humidity and low oxygen concentration can be supplied to the internal space 40. Therefore, when CDA is supplied to the internal space 40 to reduce the humidity, the oxygen concentration can also be reduced at the same time. Accordingly, the supply amount of nitrogen necessary to reduce the oxygen concentration and humidity to the target values can be more effectively reduced.

(6)在上述實施形態中，作成作為本發明之非活性氣體而供給氮者。但，非活性氣體係不限定於氮，而例如亦可作為呈供給氬等之其他非活性氣體。(6) In the above embodiment, nitrogen is supplied as the inert gas of the present invention. However, the inert gas system is not limited to nitrogen. For example, other inert gases such as argon may be supplied.

1:EFEM 5:控制裝置(控制部) 10:EFEM系統 40:內部空間 57:濕度計 61:氮供給路徑(非活性氣體供給路徑) 63:閥(第1切換部) 71:CDA供給路徑(乾燥空氣供給路徑) 73:閥(第2切換部) 74:除濕過濾器 75:分歧路徑 76:氮富化過濾器 77:切換閥(第3切換部) 1:EFEM 5: Control device (control part) 10:EFEM system 40:Internal space 57:Hygrometer 61: Nitrogen supply path (inert gas supply path) 63: Valve (1st switching part) 71: CDA supply path (dry air supply path) 73: Valve (2nd switching part) 74:Dehumidification filter 75:Divergent paths 76:Nitrogen enrichment filter 77: Switching valve (3rd switching part)

[圖1]係有關本實施形態之EFEM及其周邊的概略性平面圖。 [圖2]係有關本實施形態之EFEM之剖面圖。 [圖3]係顯示為了進行氣體供給控制之EFEM系統的構成之模式圖。 [圖4]係顯示維護時之氣體供給控制之流程圖。 [圖5]係顯示EFEM系統之變形例的模式圖。 [圖6]係顯示EFEM系統之變形例的模式圖。 [Fig. 1] is a schematic plan view of the EFEM and its surroundings according to this embodiment. [Fig. 2] is a cross-sectional view of the EFEM according to this embodiment. [Fig. 3] is a schematic diagram showing the structure of the EFEM system for gas supply control. [Fig. 4] is a flowchart showing gas supply control during maintenance. [Fig. 5] is a schematic diagram showing a modification of the EFEM system. [Fig. 6] is a schematic diagram showing a modification of the EFEM system.

1:EFEM 1:EFEM

2:框體 2:Frame

5:控制裝置(控制部) 5: Control device (control part)

10:EFEM系統 10:EFEM system

41(40):搬送室(內部空間) 41(40):Transfer room (inner space)

42(40):FFU設置室(內部空間) 42(40):FFU installation room (inner space)

43(40):返還路徑(內部空間) 43(40): Return path (internal space)

44:FFU 44:FFU

55:氧濃度計 55: Oxygen concentration meter

56:壓力計 56: Pressure gauge

57:濕度計 57:Hygrometer

58:連鎖機構 58:Chain institutions

61:氮供給路徑(非活性氣體供給路徑) 61: Nitrogen supply path (inert gas supply path)

62:氮供給源 62:Nitrogen supply source

63:閥(第1切換部) 63: Valve (1st switching part)

71:CDA供給路徑(乾燥空氣供給路徑) 71: CDA supply path (dry air supply path)

72:CDA供給源 72:CDA supply source

73:閥(第2切換部) 73: Valve (2nd switching part)

74:除濕過濾器 74:Dehumidification filter

81:排氣路徑 81:Exhaust path

82:控制閥 82:Control valve

Claims (5)

一種EFEM系統，經由以非活性氣體置換EFEM之內部空間之環境，將前述內部空間之氧濃度及濕度維持在目標值以下之EFEM系統，其特徵係 具備：於前述內部空間可供給前述非活性氣體之非活性氣體供給路徑、 和從前述非活性氣體供給路徑切換為向前述內部空間供給前述非活性氣體之狀態和不供給的狀態之第1切換部、 和向前述內部空間可供給乾燥空氣之乾燥空氣供給路徑、 和從前述乾燥空氣供給路徑切換為向前述內部空間供給前述乾燥空氣之狀態和不供給之狀態之第2切換部、 和測定前述內部空間之濕度的濕度計、 和控制前述第1切換部及第2切換部之控制部； 前述控制部係根據前述濕度計之檢測值，控制前述第1切換部和前述第2切換部。 An EFEM system that maintains the oxygen concentration and humidity in the internal space below target values by replacing the environment of the internal space of the EFEM with inert gas, and is characterized by: Having: an inert gas supply path capable of supplying the inert gas in the aforementioned internal space; and a first switching unit for switching from the inert gas supply path to a state where the inert gas is supplied to the internal space and a state where the inert gas is not supplied, and a dry air supply path for supplying dry air to the aforementioned internal space, and a second switching unit for switching from the dry air supply path to a state where the dry air is supplied to the internal space and a state where the dry air is not supplied, and a hygrometer for measuring the humidity of the aforementioned internal space, and a control unit that controls the aforementioned first switching unit and second switching unit; The control unit controls the first switching unit and the second switching unit based on the detection value of the hygrometer. 如請求項1記載之EFEM系統，其中， 前述非活性氣體供給路徑和前述乾燥空氣供給路徑則合流而，連接於前述內部空間。 The EFEM system as described in request item 1, wherein, The inert gas supply path and the dry air supply path merge and are connected to the internal space. 如請求項1或2記載之EFEM系統，其中， 前述內部空間係具備設置形成降流之風扇過濾單元之FFU設置室； 前述非活性氣體供給路徑或前述乾燥空氣供給路徑係與前述FFU設置室連通。 An EFEM system as described in claim 1 or 2, wherein, The aforementioned internal space is equipped with an FFU installation room equipped with a fan filter unit that forms a downflow; The inert gas supply path or the dry air supply path communicates with the FFU installation chamber. 如請求項1或2記載之EFEM系統，其中， 前述內部空間係具有： 設置形成降流之風扇過濾單元之FFU設置室、 和設置搬送機器手臂之輸送室、 和從前述輸送室形成上升氣流，將氣體向FFU設置室輸送之回歸路徑。 An EFEM system as described in claim 1 or 2, wherein, The aforementioned internal space system has: FFU installation room with fan filter unit that forms downflow, and a transfer room where the transfer robot arm is installed, and a return path that forms an upward airflow from the aforementioned transport chamber and transports the gas to the FFU installation chamber. 一種氣體供給方法，經由以非活性氣體置換EFEM之內部空間之環境，將前述內部空間之氧濃度及濕度維持在目標值以下之EFEM系統之氣體供給方法，其特徵係 將乾燥空氣向前述內部空間供給之乾燥空氣供給工程、 和將非活性氣體向前述內部空間供給之非活性氣體供給工程； 根據濕度，切換前述乾燥空氣供給工程和前述非活性氣體供給工程。 A gas supply method for an EFEM system that maintains the oxygen concentration and humidity in the internal space below target values by replacing the environment of the internal space of the EFEM with inert gas, and is characterized by: Dry air supply process for supplying dry air to the aforementioned internal space, and an inert gas supply project for supplying inert gas to the aforementioned internal space; Depending on the humidity, the dry air supply process and the inert gas supply process are switched.
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7379042B2 (en) * 2019-09-20 2023-11-14 東京エレクトロン株式会社 Vacuum transfer device and vacuum transfer device control method
KR102276150B1 (en) * 2019-09-27 2021-07-12 시너스텍 주식회사 Oven Chamber
KR102310953B1 (en) * 2019-12-20 2021-10-12 멜콘 주식회사 Apparatus and method for supplying dry air
CN111090295A (en) * 2019-12-31 2020-05-01 北京海岚科技有限公司 Control method and control system for environmental parameters in EFEM (electronic flash memory)
JP2023048293A (en) * 2021-09-28 2023-04-07 株式会社Kokusai Electric Substrate processing apparatus, semiconductor device manufacturing method, substrate processing method, and program
US20240125491A1 (en) * 2022-10-13 2024-04-18 Applied Materials, Inc. Filter isolation for equipment front end module

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH113867A (en) * 1997-06-11 1999-01-06 Kokusai Electric Co Ltd Semiconductor manufacturing device
JP2000353738A (en) * 1999-06-11 2000-12-19 Sony Corp Closed container, preserving device, transfer system for electronic component, and method for transfer and preserving of electronic component
SG185822A1 (en) * 2000-02-01 2012-12-28 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
JP2002056643A (en) * 2000-08-04 2002-02-22 Matsushita Electric Ind Co Ltd Magnetic disk device and method for manufacturing the same
JP2002359180A (en) * 2001-06-01 2002-12-13 Toshiba Corp Gas circulation system
JP2004160444A (en) * 2002-09-20 2004-06-10 Tokyo Electron Ltd Dry air feeding device and treatment apparatus
JP4344593B2 (en) * 2002-12-02 2009-10-14 ローツェ株式会社 Mini-environment device, thin plate manufacturing system, and atmosphere replacement method for clean container
JP2005101185A (en) * 2003-09-24 2005-04-14 Dainippon Screen Mfg Co Ltd Substrate cleaner an dryer
JP2005142185A (en) * 2003-11-04 2005-06-02 Canon Inc Aligner and its environmental control method
DE102006013997B4 (en) * 2006-03-27 2009-05-07 Rm Michaelides Software & Elektronik Gmbh Dry storage for storage of moisture-sensitive materials, method for influencing the atmospheric moisture
JP2010072624A (en) * 2008-08-18 2010-04-02 Nec Electronics Corp Reticle storage device and reticle storage method
JP5631011B2 (en) * 2010-01-25 2014-11-26 高砂熱学工業株式会社 Clean room system and operation method thereof
JP5925474B2 (en) * 2011-12-06 2016-05-25 株式会社日立ハイテクマニファクチャ＆サービス Wafer processing equipment
JP2013171757A (en) * 2012-02-22 2013-09-02 Ngk Insulators Ltd Inert gas purging method
JP2014038888A (en) * 2012-08-10 2014-02-27 Hitachi High-Tech Control Systems Corp Mini-environment device, and inner atmosphere replacement method of the same
JP6268425B2 (en) * 2013-07-16 2018-01-31 シンフォニアテクノロジー株式会社 EFEM, load port, wafer transfer method
CN105453246A (en) * 2013-08-12 2016-03-30 应用材料公司 Substrate processing systems, apparatus, and methods with factory interface environmental controls
JP6292835B2 (en) * 2013-11-20 2018-03-14 オリンパス株式会社 Optical element manufacturing apparatus and optical element manufacturing method
JP6349750B2 (en) * 2014-01-31 2018-07-04 シンフォニアテクノロジー株式会社 EFEM
JP2016015435A (en) * 2014-07-03 2016-01-28 株式会社アマダホールディングス Fiber laser oscillator, fiber laser processing device, and dehumidification method of fiber laser oscillator
CN204011459U (en) * 2014-07-09 2014-12-10 无锡易比达半导体科技有限公司 A kind of light clean Turnover Box of silicon chip

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