TW202343648A - EFEM system and gas supply method in EFEM system - Google Patents
EFEM system and gas supply method in EFEM system Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 29
- 239000011261 inert gas Substances 0.000 claims description 47
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 27
- 239000001301 oxygen Substances 0.000 claims description 27
- 229910052760 oxygen Inorganic materials 0.000 claims description 27
- 238000012546 transfer Methods 0.000 claims description 26
- 238000009434 installation Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 6
- 230000032258 transport Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 116
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 58
- 239000012298 atmosphere Substances 0.000 abstract description 25
- 239000003570 air Substances 0.000 description 40
- 238000012545 processing Methods 0.000 description 18
- 238000012423 maintenance Methods 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 14
- 238000007791 dehumidification Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 9
- 239000012080 ambient air Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 239000011796 hollow space material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 206010003497 Asphyxia Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical class O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
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Abstract
Description
本發明係有關經由以非活性氣體而置換EFEM內部空間的環境氣,而將內部空間的氧濃度及濕度維持為目標值以下的EFEM系統,及該EFEM系統之氣體供給方法。The present invention relates to an EFEM system that maintains the oxygen concentration and humidity in the internal space below target values by replacing the ambient air in the internal space of the EFEM with an inert gas, and a gas supply method for the EFEM system.
自以往,知道有在收納晶圓之FOUP(Front-Opening Unified Pod),和對於晶圓施以特定的處理之基板處理裝置之間,為了授受晶圓之EFEM(Equipment Front End Module)。近年,半導體元件的微細化進展著,而不僅存在於EFEM之內部空間的灰塵,氧或水分的影響亦不可錯過。因此,在記載於專利文獻1之EFEM之中,經由密閉EFEM的內部空間之同時,以氮(非活性氣體)而置換內部空間的環境氣之時,自內部空間除去氧或水分。因當大量消耗氮時,運行成本變高之故,在專利文獻1中,經由在內部空間而使氮循環之時,抑制氮的消耗。
[先前技術文獻]
[專利文獻]
Conventionally, it has been known that there is an EFEM (Equipment Front End Module) for transferring wafers between a FOUP (Front-Opening Unified Pod) that stores wafers and a substrate processing device that performs specific processing on the wafers. In recent years, the miniaturization of semiconductor devices has been progressing, and the influence of not only dust but also oxygen or moisture existing in the internal space of EFEM cannot be ignored. Therefore, in the EFEM described in
[專利文獻1] 日本特開2015-146349號公報[Patent Document 1] Japanese Patent Application Publication No. 2015-146349
[發明欲解決之課題][Problem to be solved by the invention]
但在專利文獻1之EFEM中,例如,在維護時一旦大氣開放內部空間時,對於之後將氧濃度或濕度降低至目標值,必須供給大量的非活性氣體(氮),而運行成本則依然為高。特別是在大氣開放時,大氣中的水分則吸附於EFEM內的裝置或配線等之故,對於將濕度下降至目標值,而必須要大量的非活性氣體。However, in the EFEM of
本發明係有鑑於上述情事所作為之構成,而其目的為削減對於將大氣開放之EFEM之內部空間的濕度降低至目標值時成為必要之非活性氣體的供給量者。 [為了解決課題之手段] The present invention is constructed in view of the above-mentioned circumstances, and its object is to reduce the supply amount of inert gas necessary to reduce the humidity of the internal space of an EFEM open to the atmosphere to a target value. [To solve the problem]
有關本發明之EFEM系統,係經由以非活性氣體而置換EFEM之內部空間的環境氣之時,將前述內部空間的氧濃度及濕度維持為目標值以下之EFEM系統,其特徵為具備:可供給前述非活性氣體於前述內部空間的非活性氣體供給路徑,和切換成自前述非活性氣體供給路徑,供給前述非活性氣體於前述內部空間的狀態與未供給之狀態的第1切換部,和可供給乾燥空氣於前述內部空間之乾燥空氣供給路徑,和切換成自前述乾燥空氣供給路徑,供給前述乾燥空氣於前述內部空間的狀態與未供給之狀態的第2切換部者。The EFEM system of the present invention is an EFEM system that maintains the oxygen concentration and humidity in the internal space below target values by replacing the ambient air in the internal space of the EFEM with inert gas. It is characterized by: being able to supply an inert gas supply path for the inert gas in the internal space; and a first switching unit capable of switching between a state in which the inert gas is supplied to the internal space and a state in which the inert gas is not supplied from the inert gas supply path; and A dry air supply path that supplies dry air to the internal space, and a second switching unit that switches between a state where the dry air is supplied to the internal space and a state where the dry air is not supplied from the dry air supply path.
如根據具有如此構成之EFEM系統,經由於大氣開放之EFEM的內部空間,取代非活性氣體而供給乾燥空氣之時,可降低內部空間的濕度者。隨之,可削減對於將內部空間的濕度下降至目標值而成為必要之非活性氣體的供給量者。According to the EFEM system having such a structure, when dry air is supplied instead of inert gas through the internal space of the EFEM that is open to the atmosphere, the humidity of the internal space can be reduced. Accordingly, the supply amount of the inert gas necessary to reduce the humidity of the internal space to the target value can be reduced.
有關本發明之EFEM系統,係更具備:測定前述內部空間的濕度之濕度計,和控制前述第1切換部及前述第2切換部之控制部;前述控制部係在密閉大氣開放之前述內部空間之後,自前述乾燥空氣供給路徑,供給前述乾燥空氣於前述內部空間,前述內部空間的濕度則下降至特定值時,停止前述乾燥空氣的供給,再自前述非活性氣體供給路徑,供給前述非活性氣體即可。The EFEM system according to the present invention further includes: a hygrometer for measuring the humidity of the internal space, and a control unit for controlling the first switching unit and the second switching unit; the control unit operates in the internal space before the airtight atmosphere is opened. Thereafter, the dry air is supplied from the dry air supply path to the internal space. When the humidity of the internal space drops to a specific value, the supply of the dry air is stopped, and the inert gas is supplied from the inert gas supply path. Just gas.
如此,在經由乾燥空氣而將內部空間的濕度,下降某種程度之後,如作為呈供給非活性氣體時,可有效果地削減對於將濕度降低至目標值而成為必要之非活性氣體的供給量者。In this way, after the humidity of the internal space has been reduced to a certain extent by using dry air, when an inert gas is supplied as the present invention, the supply amount of the inert gas necessary to reduce the humidity to the target value can be effectively reduced. By.
有關本發明之EFEM系統,前述控制部係在大氣開放前述內部空間之間,自前述乾燥空氣供給路徑,供給前述乾燥空氣於前述內部空間即可。Regarding the EFEM system of the present invention, the control unit is configured to open the internal space to the atmosphere and supply the dry air to the internal space from the dry air supply path.
在經由維護等而大氣開放內部空間之間,經由將乾燥空氣供給至內部空間之時,運算子可安全地進行作業之同時,可抑制內部空間的濕度上升者。因此,可減少在大氣開放後殘存於內部空間之水分,可縮短對於將濕度降低至目標值所需的時間。隨之,可使EFEM之稼動率提升。By supplying dry air to the internal space before the internal space is opened to the atmosphere for maintenance, etc., the operator can safely perform operations while suppressing an increase in humidity in the internal space. Therefore, the moisture remaining in the internal space after the atmosphere is opened can be reduced, and the time required to reduce the humidity to the target value can be shortened. Subsequently, the utilization rate of EFEM can be increased.
有關本發明之EFEM系統,於前述乾燥空氣供給路徑,加以設置為了更將前述乾燥空氣進行除濕之除濕過濾器即可。Regarding the EFEM system of the present invention, a dehumidification filter for further dehumidifying the dry air may be provided in the dry air supply path.
由設置如此之除濕過濾器者,因可供給更低濕度之乾燥空氣之故,可經由乾燥空氣而有效率地降低內部空間的濕度者。By providing such a dehumidification filter, dry air with lower humidity can be supplied, so that the humidity of the internal space can be effectively reduced through the dry air.
有關本發明之EFEM系統,前述非活性氣體供給路徑係作為前述非活性氣體而供給氮的構成,而更具備:自前述乾燥空氣供給路徑分歧的分歧路徑,和設置於前述分歧路徑,自前述乾燥空氣除去氮,提高氮濃度之氮富化過濾器,和切換前述乾燥空氣通過前述乾燥空氣供給路徑,或通過前述分歧路徑之第3切換部即可。In the EFEM system of the present invention, the inert gas supply path is configured to supply nitrogen as the inert gas, and further includes: a branch path branched from the dry air supply path, and a branch path provided in the branch path from the drying air supply path. It is sufficient to use a nitrogen enrichment filter to remove nitrogen from the air and increase the nitrogen concentration, and to switch the dry air through the dry air supply path or through the third switching part of the branch path.
如根據如此之構成,因可將低濕度且低氧濃度之乾燥空氣供給至內部空間之故,在供給乾燥空氣至內部空間而降低濕度時,同時亦可降低氧濃度者。隨之,可更有效果地削減對於將氧濃度及濕度下降至目標值而成為必要之非活性氣體的供給量者。With this structure, dry air with low humidity and low oxygen concentration can be supplied to the internal space. When dry air is supplied to the internal space to reduce the humidity, the oxygen concentration can also be reduced at the same time. Accordingly, the supply amount of the inert gas necessary to reduce the oxygen concentration and humidity to the target values can be more effectively reduced.
有關本發明之EFEM系統的氣體供給方法,係經由以非活性氣體而置換EFEM之內部空間的環境氣之時,將前述內部空間的氧濃度及濕度維持成目標值以下之EFEM系統的氣體供給方法,其特徵為具備:在密閉大氣開放之前述內部空間之後,將乾燥空氣供給至前述內部空間的乾燥空氣供給工程,和當前述內部空間的濕度降低至特定值時,停止前述乾燥空氣的供給,供給前述非活性氣體之非活性氣體供給工程者。The gas supply method of the EFEM system of the present invention is a gas supply method of the EFEM system that maintains the oxygen concentration and humidity in the internal space below target values while replacing the ambient air in the internal space of the EFEM with an inert gas. , characterized by having: a dry air supply process for supplying dry air to the internal space after the airtight atmosphere is opened to the internal space; and when the humidity of the internal space decreases to a specific value, stopping the supply of the dry air, An inert gas supply project that supplies the aforementioned inert gas.
如此,在經由乾燥空氣而將內部空間的濕度,下降某種程度之後,如作為呈供給非活性氣體時,可有效果地削減對於將濕度降低至目標值而成為必要之非活性氣體的供給量者。In this way, after the humidity of the internal space has been reduced to a certain extent by using dry air, when an inert gas is supplied as the present invention, the supply amount of the inert gas necessary to reduce the humidity to the target value can be effectively reduced. By.
有關本發明之EFEM系統的氣體供給方法,在大氣開放前述內部空間之間,供給前述乾燥空氣於前述內部空間即可。Regarding the gas supply method of the EFEM system of the present invention, the dry air is supplied to the internal space while the internal space is open to the atmosphere.
在經由維護等而大氣開放內部空間之間,經由將乾燥空氣供給至內部空間之時,運算子可安全地進行作業之同時,可抑制內部空間的濕度上升者。因此,可減少在大氣開放後殘存於內部空間之水分,可縮短對於將濕度降低至目標值所需的時間。隨之,可使EFEM之稼動率提升。By supplying dry air to the internal space before the internal space is opened to the atmosphere for maintenance, etc., the operator can safely perform operations while suppressing an increase in humidity in the internal space. Therefore, the moisture remaining in the internal space after the atmosphere is opened can be reduced, and the time required to reduce the humidity to the target value can be shortened. Subsequently, the utilization rate of EFEM can be increased.
對於本發明之實施形態,參照圖面之同時加以說明。然而,說明的方便上,將圖1所示之方向作為前後左右方向。即,將排列EFEM(Equipment Front End Module)1與基板處理裝置6的方向作為前後方向。將EFEM1側作為前方,而將基板處理裝置6側作為後方。與前後方向正交,排列複數之裝載埠4之方向作為左右方向。另外,與前後方向及左右方向的雙方正交之方向作為上下方向。Embodiments of the present invention will be described with reference to the drawings. However, for the convenience of explanation, the direction shown in Figure 1 is regarded as the front, rear, left and right directions. That is, the direction in which the EFEM (Equipment Front End Module) 1 and the
(EFEM及周邊的概略構成)
首先,對於EFEM 1及其周邊的概略構成,使用圖1而加以說明。圖1係有關本實施形態之EFEM 1及其周邊的概略性平面圖。如圖1所示,EFEM 1係具備:框體2,和搬送機器手臂3,和複數的裝載埠4。對於EFEM1之後方係配置有對於晶圓W施以特定處裡之基板處理裝置6。EFEM 1係經由配置於框體2內之搬送機器手臂3,在載置於裝載埠4之FOUP(Front-Opening Unified Pod)100與基板處理裝置6之間,進行晶圓W的授受。
(Schematic structure of EFEM and surrounding areas)
First, the schematic configuration of the
FOUP 100係排列複數之晶圓W於上下方向而可收容之容器,而安裝有蓋101於後端部(在前後方向之框體2側的端部)。FOUP 100係例如垂釣於設置在裝載埠4上方之未圖示之軌道而行走,經由未圖示之OHT(天頂行走式無人搬送車)而加以搬送。在OHT與裝載埠4之間,進行FOUP 100之授受。The FOUP 100 is a container that can accommodate a plurality of wafers W arranged in the up-down direction, and has a
框體2係為了連接複數的裝載埠4與基板處理裝置6之構成。對於框體2之內部係形成有對於外部空間而言作為略密閉,搬送晶圓W的搬送室41。當EFEM1稼動時,搬送室41係以氮而加以填充。框體2係呈氮循環在包含搬送室41之內部空間地加以構成(對於詳細係後述之)。另外,對於框體2之後端部係安裝有門2a,而搬送室41係隔著門2a而與基板處理裝置6連接。The
搬送機器手臂3係配置於搬送室41內,進行晶圓W的搬送。搬送機器手臂3係主要進行取出FOUP 100內之晶圓W而交付至基板處理裝置6之動作,或接受經由基板處理裝置6所處理之晶圓W而返回至FOUP 100之動作。The
裝載埠4係為了載置FOUP 100之構成。複數之裝載埠4係各後端部則呈沿著框體2之前側的隔壁地,排列配置於左右方向。裝載埠4係可置換FOUP 100內之環境氣為氮等之非活性氣體地加以構成。對於裝載埠4之後端部係設置有門4a。門4a係經由未圖示的門開閉機構而加以開閉。門4a係可解除FOUP 100的蓋101的鎖,且可保持蓋101地加以構成。在門4a保持解除鎖的蓋101之狀態,由門移動機構則開啟門4a者,開啟蓋101。經由此,FOUP 100內之晶圓W則成為可經由搬送機器手臂3而取出。
控制裝置5係與設置於框體2內,更詳細係搬送室41內之氧濃度計55,壓力計56,濕度計57(參照圖3)而加以電性連接。控制裝置5係收訊此等計測機器的計測結果,把握有關框體2內之環境氣的資訊,再依據此等而適宜調節框體2之內部空間的環境氣。對於氣體供給控制係在之後詳細說明。The
基板處理裝置6係例如,具有加載互鎖真空室6a,和處理室6b。加載互鎖真空室6a係隔著框體2的門2a而與搬送室41加以連接,為了暫時使晶圓W待機的室。處理室6b係隔著門6c而與加載互鎖真空室6a加以連接。在處理室6b中,經由未圖示之處理機構,對於晶圓W施以特定的處理。The
(EFEM之詳細構成)
接著,對於框體2及其內部的構成,使用圖2加以說明。圖2係有關本實施形態之EFEM 1之剖面圖。然而,在圖2中,省略搬送機器手臂3等之圖示。
(Detailed composition of EFEM)
Next, the
框體2係經由底壁31,天頂壁32,前壁33,後壁34,右壁(省略圖示),及左壁(省略圖示)而加以密閉,作為全體而為長方體狀之構造體。框體2之內部空間係經由延伸於水平方向之支持板37,分為下側之搬送室41,和上側之FFU設置室42。前壁33係分割為面對搬送室41的下蓋33a,和面對於FFU設置室42之上蓋33b。同樣地,後壁34係分割為面對搬送室41的下蓋34a,和面對於FFU設置室42之上蓋34b。對於未圖示之右壁及左壁,亦成為同樣的構成。The
蓋體33a、33b、34a、34b等之各蓋體係對於構成框體2之未圖示的框體而言拆裝自由地加以構成。由安裝各蓋體者,框體2之內部空間則作為密閉狀態。另一方面,由拆除各蓋體者,開放框體2之內部空間,可進行維護等者。Each lid system such as the
對於FFU設置室42係設置有配置於支持板37上之FFU(風扇過濾單元)44,和配置於FFU 44上之化學過濾器45。FFU 44係具有風扇44a與過濾器44b。FFU 44係經由風扇44a而生成朝向下方的氣流,經由過濾器44b而除去含於氣流之灰塵。化學過濾器45係例如,為了除去自基板處理裝置6帶入於EFEM 1內之活性氣體等之構成。經由FFU 44及化學過濾器45所清淨化的氣流則自FFU設置室42,藉由形成於支持板37之開口37a而送出於搬送室41。送出於搬送室41的氣流係形成層流,流動於下方。The
對於EFEM 1(框體2)之內部空間40係形成有為了使氮循環的循環路徑。此循環路徑係自FFU設置室42送出於下方的氮則呈自搬送室41之下端部歷經返還路徑43而返回至FFU設置室42地加以構成(參照圖2之箭頭)。返還路徑43係形成於柱23,導入導管27,及支持板37。柱23係亦作為框體2之構造構件而使用,而於內部形成有中空空間23a。對於柱23之下端部係安裝有導入導管27。形成於導入導管27內之導入路徑27a係與柱23之中空空間23a連通。另外,對於支持板37係形成有連接柱23之中空空間23a與FFU設置室42的流路37b。返還路徑43係具有連結導入導管27之導入路徑27a,和柱23之中空空間23a,和支持板37之流路37b的構成。A circulation path for circulating nitrogen is formed in the
對於導入導管27內係配置有風扇46。當驅動風扇46時,將到達至搬送室41之下端部的氮,吸入於返還路徑43而送出於上方,再返回至FFU設置室42。返回至FFU設置室42的氮係經由FFU 44或化學過濾器45而加以清淨化,再次送出於搬送室41。由以上作為,氮則成為可循環在EFEM 1之內部空間40。A
EFEM 1係內部空間40則作為氮環境之故,為了維護等而突然開啟蓋,開放內部空間40時,而有運算子引起窒息之虞。為了避免此,對於EFEM 1係設置有連鎖機構58(參照圖3)。當控制裝置5將連鎖機構58解鎖時,可開啟框體2的蓋體,但將連鎖機構58上鎖時係無法開啟蓋體。Since the
(氣體供給控制)
在如以上所構成之EFEM 1中,經由以氮而置換內部空間40之環境氣之時,可將內部空間40(特別是搬送室41)的氧濃度及濕度維持成目標值以下。在本實施形態中,氧濃度的目標值則作為100ppm,而作為濕度的目標值,將露點溫度作為設定為-70℃者。當然,此等目標值係可作適宜變更,而亦可以露點溫度以外的指標而設定濕度的目標值。
(gas supply control)
In the
圖3係顯示為了進行氣體供給控制之EFEM系統10的構成之模式圖。EFEM系統10係經由EFEM 1,和為了供給及排出氣體於EFEM 1之各手段而加以構成。對於EFEM 1係連接有氮供給路徑61,而自設置於設施之氮供給源62,藉由氮供給路徑61而供給氮於EFEM 1之內部空間40。對於氮供給路徑61係設置有閥63,而控制裝置5則由控制閥63之開度者,加以調整氮的供給量。FIG. 3 is a schematic diagram showing the structure of the
另外,對於EFEM 1係連接有CDA(Clean Dry Air:乾燥空氣)供給路徑71,而自設置於設施之CDA供給源72,藉由CDA供給路徑71而供給CDA於EFEM 1之內部空間40。對於CDA供給路徑71係設置有閥73,而控制裝置5則由控制閥73之開度者,加以調整CDA的供給量。對於CDA供給路徑71係更設置有除濕過濾器74。經由除濕過濾器74而更加除濕自CDA供給源72所供給之CDA之時,可供給更低濕度之CDA者。然而,在圖3中,記載著在途中將氮供給路徑61與CDA供給路徑71合流之構成,但將氮供給路徑61及CDA供給路徑71各個別地連接於EFEM 1之構成亦可。In addition, a CDA (Clean Dry Air)
更且,對於EFEM 1係連接有排氣路徑81,而可自EFEM1之內部空間40排出氣體者。對於排氣路徑81係設置有閥82,而控制裝置5則由控制閥82之開度者,加以調整氣體的排出量。Furthermore, the
在如此所構成之EFEM系統10中,對於EFEM 1之通常稼動時(晶圓W之搬送時),係未供給CDA於內部空間40,而加以供給氮。控制裝置5係作為成保持關閉閥73,因應來自氧濃度計55及濕度計(露點溫度計)57之輸出而控制閥63的開度。由如此作為而調整對於內部空間40之氮的供給量者,將各內部空間40之氧濃度及露點溫度維持為目標值以下。In the
另外,對於EFEM 1之通常稼動時,EFEM 1之內部空間40的壓力則維持為較大氣壓稍微高之微陽壓。經由此,防止自EFEM 1之外部,空氣流入至內部空間40者。控制裝置5係因應來自壓力計56之輸出而控制閥82之開度。由如此作為而調整自內部空間40之氣體的排出量者,將內部空間40之壓力維持為微陽壓。具體而言係1Pa(G)~3000Pa(G)之範圍內,而理想為3Pa(G)~500Pa(G)、更理想為5Pa(G)~100Pa(G)。在本實施形態中,呈成為10Pa(G)之差壓進行調整。In addition, during normal operation of
(維護時之氣體供給控制)
對於在維護等,開放EFEM 1之內部空間40時,或在維護等之結束後,將EFEM 1之內部空間40返回至氮環境氣時,係進行與通常稼動時不同之控制。圖4係顯示維護時之氣體供給控制之流程圖。當輸入經由運算子而進行維護之內容的信號時,控制裝置5係關閉閥63之同時,開啟閥73,開始供給CDA於EFEM 1之內部空間40(步驟S11)。之後,內部空間40之氧濃度則成為特定值(例如,19.5%)以上(在步驟S12為YES),當成為可完全地開放內部空間40之狀態時,控制裝置5係將連鎖機構58解鎖(步驟S13)。
(Gas supply control during maintenance)
When the
當連鎖機構58解鎖時,運算子係開啟EFEM 1之蓋體而開放內部空間40,進行必要的維護(步驟S14)。期間亦持續對於內部空間40之CDA的供給。經由此,可抑制在維護中,內部空間40之濕度上升者。當維護結束時,運算子係關閉EFEM 1之蓋體而將內部空間40作為成密閉狀態,對於控制裝置5輸入維護結束之內容。接受此等,控制裝置5係將連鎖機構58進行上鎖(步驟S15)。When the interlocking
在密閉EFEM 1之內部空間40之後,亦持續對於內部空間40之CDA的供給。因經由CDA之供給而除去內部空間40之水分之故,露點溫度係下降,但內部空間40之氧濃度係與大氣幾乎保持相同。當內部空間40之露點溫度下降至特定值(例如,-50℃)時(在步驟S16為YES),控制裝置5係關閉閥73之同時,開啟閥63,開始供給氮於內部空間40(步驟S17)。之後,當將各內部空間40之露點溫度及氧濃度降低至目標值時(-70℃、100ppm)(在步驟S18為YES),再開啟EFEM1之通常稼働(步驟S19)。After the
在此,將一旦大氣開放的EFEM 1之內部空間40的露點溫度下降至目標值係需要較將氧濃度下降至目標值為長的時間。雖說氧係如以氮進行置換而解決,但為了在進行大氣開放時,除去吸附於EFEM 1內之裝置或配線等之水分,係因有必要以大量的乾燥氣體(氮或CDA)而析出水分之必要之故。隨之,如本實施形態,如可以CDA僅使濕度(露點溫度)作某種程度降低,可大幅削減氮的供給量者。其結果,可抑制EFEM1之運行成本。然而,在本實施形態中,作成當露點溫度下降至較目標值(-70℃)為高的特定值(-50℃)時,停止CDA之供給而開始氮的供給者,但露點溫度下降至目標值之後,切換為氮的供給亦可。Here, it takes a longer time to reduce the dew point temperature of the
(效果)
有關本實施形態之EFEM系統10係經由以氮(非活性氣體)而置換EFEM 1之內部空間40的環境氣之時,將內部空間40的氧濃度及濕度(露點溫度)維持成目標值以下之構成,其中,具備:可供給氮於內部空間40之氮供給路徑61 (非活性氣體供給路徑),和切換為自氮供給路徑61供給氮於內部空間40之狀態,與未供給之狀態的閥63(第1切換部),和可供給CDA(乾燥空氣)於內部空間40之CDA供給路徑71(乾燥空氣供給路徑),和切換為自CDA供給路徑71供給CDA於內部空間40之狀態,與未供給之狀態的閥73(第2切換部)。如根據具有如此構成之EFEM系統10,經由於大氣開放之EFEM 1的內部空間40,取代氮而供給CDA之時,可降低內部空間40的濕度者。隨之,可削減對於將內部空間40的濕度下降至目標值而成為必要之氮的供給量者。
(Effect)
The
在本實施形態中,控制裝置5(控制部)係作為呈在密閉大氣開放之內部空間40之後,自CDA供給路徑71供給CDA於內部空間40(相當於本發明之「乾燥空氣供給工程」),內部空間40之濕度則降低至特定值時,停止CDA之供給,自氮供給路徑61供給氮(相當於本發明之「非活性氣體供給工程」)。如此,如作為呈在經由CDA而將內部空間40的濕度,下降某種程度之後,供給氮時,可有效果地削減對於將濕度降低至目標值而成為必要之非活性氣體的供給量者。In this embodiment, the control device 5 (control unit) is configured to supply CDA from the
在本實施形態中,控制裝置5係大氣開放內部空間40之間,自CDA供給路徑71供給CDA於內部空間40。如此,在經由維護等而大氣開放內部空間40之間,經由將CDA供給至內部空間40之時,運算子可安全地進行作業之同時,可抑制內部空間40的濕度上升者。因此,可減少在大氣開放後殘存於內部空間40之水分,可縮短對於將濕度降低至目標值所需的時間。隨之,可使EFEM 1之稼動率提升。In this embodiment, the
在本實施形態中,對於CDA供給路徑71,設置有為了更加將CDA除濕之除濕過濾器74。由設置如此之除濕過濾器74者,因可供給更低濕度之CDA之故,可經由CDA而有效率地降低內部空間40的濕度者。In this embodiment, the
(其他的實施形態) 對於上述實施形態加上種種變更之變更例,加以說明。 (Other embodiments) Modified examples in which various modifications are added to the above embodiment will be described.
(1)在上述實施形態中,作成控制裝置5,以自動控制閥63,73之構成。但,作為呈運算子則經由以手動開關閥63,73之時,進行氣體供給控制亦可。(1) In the above embodiment, the
(2)在上述實施形態中,作成於CDA供給路徑71設置除濕過濾器74之構成。但,作為呈將除濕過濾器74設置於EFEM 1之內部空間40(例如,返還路徑43)亦可。另外,未必必須設置除濕過濾器74,而省略除濕過濾器74亦可。(2) In the above embodiment, the
(3)在上述實施形態中,作成在維護等,將EFEM 1之內部空間40進行大氣開放之間,供給CDA於內部空間40之構成。但,未必必須在將內部空間40進行大氣開放之間,供給CDA者。(3) In the above embodiment, CDA is supplied to the
(4)如圖5所示,作為呈於EFEM 1之內部空間40,設置加熱器59亦可。由設置加熱器59者,可增大EFEM1內之飽和水蒸氣量,而容易使吸附於裝置或配線等之水分蒸發。其結果,可縮短將內部空間40之濕度下降至目標值所需之時間之同時,可削減乾燥氣體(氮或CDA)之消耗量者。當考慮到於許多裝置或配線等配置於框體2之底面時,將加熱器59設置於框體2之底面附近者為佳,但當然亦可設置於其他處。(4) As shown in FIG. 5 , a
(5)如圖6所示,作為呈於CDA供給路徑71之途中,設置自CDA供給路徑71分歧之分歧路徑75,設置氮富化過濾器76於分歧路徑75亦可。氮富化過濾器76係自空氣除去氧而可提高氮濃度之過濾器。對於CDA供給路徑71與分歧路徑75之分歧部,係設置為了切換CDA通過CDA供給路徑71,或通過分歧路徑75之切換閥77(相當於本發明之「第3切換部」)。如根據如此之構成,因可將低濕度且低氧濃度之CDA供給至內部空間40之故,在供給CDA至內部空間40而降低濕度時,同時亦可降低氧濃度者。隨之,可更有效果地削減對於將氧濃度及濕度下降至目標值而成為必要之氮的供給量者。(5) As shown in FIG. 6 , a
(6)在上述實施形態中,作成作為本發明之非活性氣體而供給氮者。但,非活性氣體係不限定於氮,而例如亦可作為呈供給氬等之其他非活性氣體。(6) In the above embodiment, nitrogen is supplied as the inert gas of the present invention. However, the inert gas system is not limited to nitrogen. For example, other inert gases such as argon may be supplied.
1:EFEM 5:控制裝置(控制部) 10:EFEM系統 40:內部空間 57:濕度計 61:氮供給路徑(非活性氣體供給路徑) 63:閥(第1切換部) 71:CDA供給路徑(乾燥空氣供給路徑) 73:閥(第2切換部) 74:除濕過濾器 75:分歧路徑 76:氮富化過濾器 77:切換閥(第3切換部) 1:EFEM 5: Control device (control part) 10:EFEM system 40:Internal space 57:Hygrometer 61: Nitrogen supply path (inert gas supply path) 63: Valve (1st switching part) 71: CDA supply path (dry air supply path) 73: Valve (2nd switching part) 74:Dehumidification filter 75:Divergent paths 76:Nitrogen enrichment filter 77: Switching valve (3rd switching part)
[圖1]係有關本實施形態之EFEM及其周邊的概略性平面圖。 [圖2]係有關本實施形態之EFEM之剖面圖。 [圖3]係顯示為了進行氣體供給控制之EFEM系統的構成之模式圖。 [圖4]係顯示維護時之氣體供給控制之流程圖。 [圖5]係顯示EFEM系統之變形例的模式圖。 [圖6]係顯示EFEM系統之變形例的模式圖。 [Fig. 1] is a schematic plan view of the EFEM and its surroundings according to this embodiment. [Fig. 2] is a cross-sectional view of the EFEM according to this embodiment. [Fig. 3] is a schematic diagram showing the structure of the EFEM system for gas supply control. [Fig. 4] is a flowchart showing gas supply control during maintenance. [Fig. 5] is a schematic diagram showing a modification of the EFEM system. [Fig. 6] is a schematic diagram showing a modification of the EFEM system.
1:EFEM 1:EFEM
2:框體 2:Frame
5:控制裝置(控制部) 5: Control device (control part)
10:EFEM系統 10:EFEM system
41(40):搬送室(內部空間) 41(40):Transfer room (inner space)
42(40):FFU設置室(內部空間) 42(40):FFU installation room (inner space)
43(40):返還路徑(內部空間) 43(40): Return path (internal space)
44:FFU 44:FFU
55:氧濃度計 55: Oxygen concentration meter
56:壓力計 56: Pressure gauge
57:濕度計 57:Hygrometer
58:連鎖機構 58:Chain institutions
61:氮供給路徑(非活性氣體供給路徑) 61: Nitrogen supply path (inert gas supply path)
62:氮供給源 62:Nitrogen supply source
63:閥(第1切換部) 63: Valve (1st switching part)
71:CDA供給路徑(乾燥空氣供給路徑) 71: CDA supply path (dry air supply path)
72:CDA供給源 72:CDA supply source
73:閥(第2切換部) 73: Valve (2nd switching part)
74:除濕過濾器 74:Dehumidification filter
81:排氣路徑 81:Exhaust path
82:控制閥 82:Control valve
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KR102310953B1 (en) * | 2019-12-20 | 2021-10-12 | 멜콘 주식회사 | Apparatus and method for supplying dry air |
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JP2023048293A (en) * | 2021-09-28 | 2023-04-07 | 株式会社Kokusai Electric | Substrate processing apparatus, semiconductor device manufacturing method, substrate processing method, and program |
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TWI800533B (en) | 2023-05-01 |
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