TW201939655A - EFEM system and gas supply method for EFEM system reducing supply amount of the inert gas required for lowering the humidity of the internal space that is open to the atmosphere - Google Patents

EFEM system and gas supply method for EFEM system reducing supply amount of the inert gas required for lowering the humidity of the internal space that is open to the atmosphere Download PDF

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TW201939655A
TW201939655A TW107133749A TW107133749A TW201939655A TW 201939655 A TW201939655 A TW 201939655A TW 107133749 A TW107133749 A TW 107133749A TW 107133749 A TW107133749 A TW 107133749A TW 201939655 A TW201939655 A TW 201939655A
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internal space
dry air
efem
inert gas
supply path
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TWI800533B (en
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河合俊宏
小倉源五郎
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日商昕芙旎雅股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

This invention relates to an EFEM system and a gas supply method for an EFEM system. When the atmosphere gas of the internal space of the EFEM is replaced with the inert gas, the supply amount of the inert gas required for lowering the humidity of the internal space that is open to the atmosphere is reduced. The solution is to install an inert gas supply path 61 capable of supplying nitrogen to the internal space 40 of the EFEM 1, a first switching unit 63 for switching between a state of supplying inert gas to the internal space 40 from the inert gas supply path 61 and a state of not supplying it, and a second switching unit 73 for switching between a state of supplying dry air to the internal space 40 from the dry air supply path 71 and a state of not supplying it.

Description

ＥＦＥＭ系統及ＥＦＥＭ系統之氣體供給方法EFEM system and gas supply method of EFEM system

本發明係有關經由以非活性氣體而置換EFEM內部空間的環境氣，而將內部空間的氧濃度及濕度維持為目標值以下的EFEM系統，及該EFEM系統之氣體供給方法。The present invention relates to an EFEM system that maintains the oxygen concentration and humidity of the internal space below a target value by replacing the ambient gas in the internal space of the EFEM with an inert gas, and a gas supply method for the EFEM system.

自以往，知道有在收納晶圓之FOUP(Front-Opening Unified Pod)，和對於晶圓施以特定的處理之基板處理裝置之間，為了授受晶圓之EFEM(Equipment Front End Module)。近年，半導體元件的微細化進展著，而不僅存在於EFEM之內部空間的灰塵，氧或水分的影響亦不可錯過。因此，在記載於專利文獻1之EFEM之中，經由密閉EFEM的內部空間之同時，以氮(非活性氣體)而置換內部空間的環境氣之時，自內部空間除去氧或水分。因當大量消耗氮時，運行成本變高之故，在專利文獻1中，經由在內部空間而使氮循環之時，抑制氮的消耗。

[先前技術文獻]
[專利文獻]From the past, it is known that there is an EFEM (Equipment Front End Module) for receiving and receiving wafers between a FOUP (Front-Opening Unified Pod) for storing wafers and a substrate processing apparatus that performs a specific process on the wafers. In recent years, the miniaturization of semiconductor devices has progressed, and not only the dust, oxygen or moisture in the internal space of EFEM cannot be missed. Therefore, in the EFEM described in Patent Document 1, when the internal space of the EFEM is sealed and the ambient gas in the internal space is replaced with nitrogen (inert gas), oxygen or moisture is removed from the internal space. When a large amount of nitrogen is consumed, the running cost becomes high. In Patent Document 1, when nitrogen is circulated through the internal space, the consumption of nitrogen is suppressed.

[Prior technical literature]
[Patent Literature]

[專利文獻1] 日本特開2015-146349號公報[Patent Document 1] Japanese Patent Laid-Open No. 2015-146349

[發明欲解決之課題][Questions to be Solved by the Invention]

但在專利文獻1之EFEM中，例如，在維護時一旦大氣開放內部空間時，對於之後將氧濃度或濕度降低至目標值，必須供給大量的非活性氣體(氮)，而運行成本則依然為高。特別是在大氣開放時，大氣中的水分則吸附於EFEM內的裝置或配線等之故，對於將濕度下降至目標值，而必須要大量的非活性氣體。However, in the EFEM of Patent Document 1, for example, once the internal space is opened to the atmosphere during maintenance, a large amount of inert gas (nitrogen) must be supplied to reduce the oxygen concentration or humidity to a target value afterwards, and the running cost is still high. In particular, when the atmosphere is open, the moisture in the atmosphere is adsorbed to the devices or wiring in the EFEM. To reduce the humidity to the target value, a large amount of inert gas is required.

本發明係有鑑於上述情事所作為之構成，而其目的為削減對於將大氣開放之EFEM之內部空間的濕度降低至目標值時成為必要之非活性氣體的供給量者。

[為了解決課題之手段]The present invention has a structure made in view of the above circumstances, and an object thereof is to reduce a supply amount of an inert gas necessary to reduce the humidity of an internal space of an EFEM that is open to the atmosphere to a target value.

[Means for solving problems]

有關本發明之EFEM系統，係經由以非活性氣體而置換EFEM之內部空間的環境氣之時，將前述內部空間的氧濃度及濕度維持為目標值以下之EFEM系統，其特徵為具備：可供給前述非活性氣體於前述內部空間的非活性氣體供給路徑，和切換成自前述非活性氣體供給路徑，供給前述非活性氣體於前述內部空間的狀態與未供給之狀態的第1切換部，和可供給乾燥空氣於前述內部空間之乾燥空氣供給路徑，和切換成自前述乾燥空氣供給路徑，供給前述乾燥空氣於前述內部空間的狀態與未供給之狀態的第2切換部者。The EFEM system of the present invention is an EFEM system that maintains the oxygen concentration and humidity of the internal space below a target value when the ambient gas in the internal space of the EFEM is replaced with an inert gas, and is characterized by: An inert gas supply path for the inert gas in the internal space, and a first switching section that switches from the inert gas supply path to supply the inactive gas to the internal space and a state in which the inactive gas is not supplied; and A dry air supply path that supplies dry air to the internal space, and a second switching unit that switches from the dry air supply path to supply the dry air in the internal space and a state in which it is not supplied.

如根據具有如此構成之EFEM系統，經由於大氣開放之EFEM的內部空間，取代非活性氣體而供給乾燥空氣之時，可降低內部空間的濕度者。隨之，可削減對於將內部空間的濕度下降至目標值而成為必要之非活性氣體的供給量者。According to the EFEM system having such a structure, when the internal space of the EFEM that is open to the atmosphere is used instead of inert gas to supply dry air, the humidity of the internal space can be reduced. Accordingly, it is possible to reduce a supply amount of the inert gas necessary to reduce the humidity of the internal space to a target value.

有關本發明之EFEM系統，係更具備：測定前述內部空間的濕度之濕度計，和控制前述第1切換部及前述第2切換部之控制部；前述控制部係在密閉大氣開放之前述內部空間之後，自前述乾燥空氣供給路徑，供給前述乾燥空氣於前述內部空間，前述內部空間的濕度則下降至特定值時，停止前述乾燥空氣的供給，再自前述非活性氣體供給路徑，供給前述非活性氣體即可。The EFEM system according to the present invention further includes a hygrometer for measuring the humidity of the internal space, and a control section for controlling the first switching section and the second switching section; the control section is the internal space opened in a closed atmosphere. After that, the dry air is supplied from the dry air supply path to the internal space, and when the humidity of the internal space drops to a specific value, the supply of the dry air is stopped, and then the inactive gas is supplied from the inactive gas supply path. Just gas.

如此，在經由乾燥空氣而將內部空間的濕度，下降某種程度之後，如作為呈供給非活性氣體時，可有效果地削減對於將濕度降低至目標值而成為必要之非活性氣體的供給量者。In this way, after reducing the humidity of the internal space to a certain extent through dry air, for example, when supplying inert gas, it is possible to effectively reduce the amount of inactive gas required to reduce the humidity to a target value. By.

有關本發明之EFEM系統，前述控制部係在大氣開放前述內部空間之間，自前述乾燥空氣供給路徑，供給前述乾燥空氣於前述內部空間即可。With regard to the EFEM system of the present invention, the control unit may be provided between the internal space and the dry air supply path, and may supply the dry air to the internal space.

在經由維護等而大氣開放內部空間之間，經由將乾燥空氣供給至內部空間之時，運算子可安全地進行作業之同時，可抑制內部空間的濕度上升者。因此，可減少在大氣開放後殘存於內部空間之水分，可縮短對於將濕度降低至目標值所需的時間。隨之，可使EFEM之稼動率提升。When the interior space is opened to the atmosphere through maintenance or the like, and when dry air is supplied to the interior space, the operator can perform work safely while suppressing a rise in humidity in the interior space. Therefore, the moisture remaining in the internal space after the atmosphere is opened can be reduced, and the time required to reduce the humidity to the target value can be shortened. As a result, EFEM's crop rate can be increased.

有關本發明之EFEM系統，於前述乾燥空氣供給路徑，加以設置為了更將前述乾燥空氣進行除濕之除濕過濾器即可。In the EFEM system of the present invention, a dehumidifying filter may be provided in the aforementioned dry air supply path to further dehumidify the aforementioned dry air.

由設置如此之除濕過濾器者，因可供給更低濕度之乾燥空氣之故，可經由乾燥空氣而有效率地降低內部空間的濕度者。The person who installs such a dehumidifying filter can supply dry air with a lower humidity, and can effectively reduce the humidity of the internal space through the dry air.

有關本發明之EFEM系統，前述非活性氣體供給路徑係作為前述非活性氣體而供給氮的構成，而更具備：自前述乾燥空氣供給路徑分歧的分歧路徑，和設置於前述分歧路徑，自前述乾燥空氣除去氮，提高氮濃度之氮富化過濾器，和切換前述乾燥空氣通過前述乾燥空氣供給路徑，或通過前述分歧路徑之第3切換部即可。In the EFEM system of the present invention, the inert gas supply path is configured to supply nitrogen as the inert gas, and further includes a branch path branched from the dry air supply path, and a branch path provided in the branch path and dried from the drying path. The nitrogen-enriched filter that removes nitrogen from the air and increases the nitrogen concentration may switch the dry air through the dry air supply path or the third switching section of the branch path.

如根據如此之構成，因可將低濕度且低氧濃度之乾燥空氣供給至內部空間之故，在供給乾燥空氣至內部空間而降低濕度時，同時亦可降低氧濃度者。隨之，可更有效果地削減對於將氧濃度及濕度下降至目標值而成為必要之非活性氣體的供給量者。According to this structure, dry air with low humidity and low oxygen concentration can be supplied to the internal space, and when dry air is supplied to the internal space to reduce humidity, the oxygen concentration can also be reduced. Accordingly, it is possible to more effectively reduce the supply amount of the inert gas necessary to reduce the oxygen concentration and humidity to the target values.

有關本發明之EFEM系統的氣體供給方法，係經由以非活性氣體而置換EFEM之內部空間的環境氣之時，將前述內部空間的氧濃度及濕度維持成目標值以下之EFEM系統的氣體供給方法，其特徵為具備：在密閉大氣開放之前述內部空間之後，將乾燥空氣供給至前述內部空間的乾燥空氣供給工程，和當前述內部空間的濕度降低至特定值時，停止前述乾燥空氣的供給，供給前述非活性氣體之非活性氣體供給工程者。The gas supply method of the EFEM system of the present invention is a gas supply method of the EFEM system in which the oxygen concentration and humidity in the internal space are maintained below a target value when the ambient gas in the internal space of the EFEM is replaced with an inert gas. It is characterized by comprising: a dry air supply process for supplying dry air to the internal space after the internal space is opened in a closed atmosphere, and stopping the supply of the dry air when the humidity of the internal space is reduced to a specific value, An inert gas supply engineer who supplies the aforementioned inert gas.

如此，在經由乾燥空氣而將內部空間的濕度，下降某種程度之後，如作為呈供給非活性氣體時，可有效果地削減對於將濕度降低至目標值而成為必要之非活性氣體的供給量者。In this way, after reducing the humidity of the internal space to a certain extent through dry air, for example, when supplying inert gas, it is possible to effectively reduce the amount of inactive gas required to reduce the humidity to a target value. By.

有關本發明之EFEM系統的氣體供給方法，在大氣開放前述內部空間之間，供給前述乾燥空氣於前述內部空間即可。Regarding the gas supply method of the EFEM system of the present invention, it is sufficient to supply the dry air to the internal space while the atmosphere is open to the internal space.

在經由維護等而大氣開放內部空間之間，經由將乾燥空氣供給至內部空間之時，運算子可安全地進行作業之同時，可抑制內部空間的濕度上升者。因此，可減少在大氣開放後殘存於內部空間之水分，可縮短對於將濕度降低至目標值所需的時間。隨之，可使EFEM之稼動率提升。When the interior space is opened to the atmosphere through maintenance or the like, and when dry air is supplied to the interior space, the operator can perform work safely while suppressing a rise in humidity in the interior space. Therefore, the moisture remaining in the internal space after the atmosphere is opened can be reduced, and the time required to reduce the humidity to the target value can be shortened. As a result, EFEM's crop rate can be increased.

對於本發明之實施形態，參照圖面之同時加以說明。然而，說明的方便上，將圖1所示之方向作為前後左右方向。即，將排列EFEM(Equipment Front End Module)1與基板處理裝置6的方向作為前後方向。將EFEM1側作為前方，而將基板處理裝置6側作為後方。與前後方向正交，排列複數之裝載埠4之方向作為左右方向。另外，與前後方向及左右方向的雙方正交之方向作為上下方向。An embodiment of the present invention will be described with reference to the drawings. However, for convenience of explanation, the direction shown in FIG. 1 is taken as the front-back, left-right, and left-right directions. That is, the direction in which the EFEM (Equipment Front End Module) 1 and the substrate processing apparatus 6 are arranged is taken as the front-rear direction. The EFEM1 side is set to the front, and the substrate processing apparatus 6 side is set to the rear. A direction orthogonal to the front-rear direction, and a plurality of loading ports 4 are arranged as the left-right direction. In addition, a direction orthogonal to both the front-rear direction and the left-right direction is taken as the vertical direction.

(EFEM及周邊的概略構成)
首先，對於EFEM 1及其周邊的概略構成，使用圖1而加以說明。圖1係有關本實施形態之EFEM 1及其周邊的概略性平面圖。如圖1所示，EFEM 1係具備：框體2，和搬送機器手臂3，和複數的裝載埠4。對於EFEM1之後方係配置有對於晶圓W施以特定處裡之基板處理裝置6。EFEM 1係經由配置於框體2內之搬送機器手臂3，在載置於裝載埠4之FOUP(Front-Opening Unified Pod)100與基板處理裝置6之間，進行晶圓W的授受。(Schematic configuration of EFEM and its surroundings)
First, a schematic configuration of EFEM 1 and its surroundings will be described using FIG. 1. FIG. 1 is a schematic plan view of the EFEM 1 and its surroundings according to this embodiment. As shown in FIG. 1, the EFEM 1 is provided with a frame 2, a transfer robot arm 3, and a plurality of loading ports 4. After the EFEM 1, a substrate processing apparatus 6 that applies a specific position to the wafer W is disposed. The EFEM 1 transmits and receives wafers W between a FOUP (Front-Opening Unified Pod) 100 and a substrate processing apparatus 6 placed in a loading port 4 through a transfer robot arm 3 disposed in a housing 2.

FOUP 100係排列複數之晶圓W於上下方向而可收容之容器，而安裝有蓋101於後端部(在前後方向之框體2側的端部)。FOUP 100係例如垂釣於設置在裝載埠4上方之未圖示之軌道而行走，經由未圖示之OHT(天頂行走式無人搬送車)而加以搬送。在OHT與裝載埠4之間，進行FOUP 100之授受。The FOUP 100 is a container capable of accommodating a plurality of wafers W in an up-down direction, and a cover 101 is attached to a rear end portion (an end portion on the frame 2 side in the front-rear direction). The FOUP 100 is, for example, fished and traveled on an unillustrated track provided above the loading port 4 and is transported via an unillustrated OHT (Zenith walking unmanned transport vehicle). FOUP 100 is granted between OHT and loading port 4.

框體2係為了連接複數的裝載埠4與基板處理裝置6之構成。對於框體2之內部係形成有對於外部空間而言作為略密閉，搬送晶圓W的搬送室41。當EFEM1稼動時，搬送室41係以氮而加以填充。框體2係呈氮循環在包含搬送室41之內部空間地加以構成(對於詳細係後述之)。另外，對於框體2之後端部係安裝有門2a，而搬送室41係隔著門2a而與基板處理裝置6連接。The housing 2 is configured to connect a plurality of loading ports 4 and a substrate processing apparatus 6. The inside of the housing 2 is formed with a transfer chamber 41 that is slightly closed to the outside space and transfers the wafer W. When the EFEM 1 is moved, the transfer chamber 41 is filled with nitrogen. The housing 2 is configured in a nitrogen cycle in an internal space including the transfer chamber 41 (the details will be described later). A door 2 a is attached to the rear end of the housing 2, and the transfer chamber 41 is connected to the substrate processing apparatus 6 via the door 2 a.

搬送機器手臂3係配置於搬送室41內，進行晶圓W的搬送。搬送機器手臂3係主要進行取出FOUP 100內之晶圓W而交付至基板處理裝置6之動作，或接受經由基板處理裝置6所處理之晶圓W而返回至FOUP 100之動作。The transfer robot arm 3 is arranged in the transfer chamber 41 and transfers the wafer W. The transfer robot arm 3 mainly performs an operation of taking out the wafer W in the FOUP 100 and delivering it to the substrate processing apparatus 6, or receiving a wafer W processed by the substrate processing apparatus 6 and returning to the FOUP 100.

裝載埠4係為了載置FOUP 100之構成。複數之裝載埠4係各後端部則呈沿著框體2之前側的隔壁地，排列配置於左右方向。裝載埠4係可置換FOUP 100內之環境氣為氮等之非活性氣體地加以構成。對於裝載埠4之後端部係設置有門4a。門4a係經由未圖示的門開閉機構而加以開閉。門4a係可解除FOUP 100的蓋101的鎖，且可保持蓋101地加以構成。在門4a保持解除鎖的蓋101之狀態，由門移動機構則開啟門4a者，開啟蓋101。經由此，FOUP 100內之晶圓W則成為可經由搬送機器手臂3而取出。The loading port 4 is configured to mount the FOUP 100. The rear end portions of the plurality of loading ports 4 are arranged along the partition wall along the front side of the housing 2 and are arranged in the left-right direction. The loading port 4 is configured to replace the ambient gas in the FOUP 100 with an inert gas such as nitrogen. A door 4a is provided at the rear end of the loading port 4. The door 4a is opened and closed by a door opening and closing mechanism (not shown). The door 4 a is configured to unlock the cover 101 of the FOUP 100 and to hold the cover 101. The door 101 is kept in the unlocked state of the cover 101, and the door 4a is opened by the door moving mechanism to open the cover 101. As a result, the wafer W in the FOUP 100 can be taken out via the transfer robot arm 3.

控制裝置5係與設置於框體2內，更詳細係搬送室41內之氧濃度計55，壓力計56，濕度計57(參照圖3)而加以電性連接。控制裝置5係收訊此等計測機器的計測結果，把握有關框體2內之環境氣的資訊，再依據此等而適宜調節框體2之內部空間的環境氣。對於氣體供給控制係在之後詳細說明。The control device 5 is electrically connected to an oxygen concentration meter 55, a pressure gauge 56, and a hygrometer 57 (see FIG. 3) installed in the housing 2 and more specifically in the transfer chamber 41. The control device 5 receives the measurement results of these measuring devices, grasps the information about the ambient air in the frame body 2, and adjusts the ambient air in the internal space of the frame body 2 accordingly. The gas supply control system will be described in detail later.

基板處理裝置6係例如，具有加載互鎖真空室6a，和處理室6b。加載互鎖真空室6a係隔著框體2的門2a而與搬送室41加以連接，為了暫時使晶圓W待機的室。處理室6b係隔著門6c而與加載互鎖真空室6a加以連接。在處理室6b中，經由未圖示之處理機構，對於晶圓W施以特定的處理。The substrate processing apparatus 6 includes, for example, a load-locking vacuum chamber 6a and a processing chamber 6b. The load-locking vacuum chamber 6a is a chamber which is connected to the transfer chamber 41 via the door 2a of the housing 2 to temporarily wait for the wafer W. The processing chamber 6b is connected to the load interlocking vacuum chamber 6a via a door 6c. In the processing chamber 6b, a specific process is performed on the wafer W via a processing mechanism (not shown).

(EFEM之詳細構成)
接著，對於框體2及其內部的構成，使用圖2加以說明。圖2係有關本實施形態之EFEM 1之剖面圖。然而，在圖2中，省略搬送機器手臂3等之圖示。(Detailed composition of EFEM)
Next, the frame body 2 and its internal configuration will be described using FIG. 2. Fig. 2 is a sectional view of the EFEM 1 according to this embodiment. However, in FIG. 2, illustrations of the transfer robot arm 3 and the like are omitted.

框體2係經由底壁31，天頂壁32，前壁33，後壁34，右壁(省略圖示)，及左壁(省略圖示)而加以密閉，作為全體而為長方體狀之構造體。框體2之內部空間係經由延伸於水平方向之支持板37，分為下側之搬送室41，和上側之FFU設置室42。前壁33係分割為面對搬送室41的下蓋33a，和面對於FFU設置室42之上蓋33b。同樣地，後壁34係分割為面對搬送室41的下蓋34a，和面對於FFU設置室42之上蓋34b。對於未圖示之右壁及左壁，亦成為同樣的構成。The frame 2 is closed by a bottom wall 31, a zenith wall 32, a front wall 33, a rear wall 34, a right wall (not shown), and a left wall (not shown), and has a rectangular parallelepiped structure as a whole. . The internal space of the frame 2 is divided into a lower transfer chamber 41 and an upper FFU installation chamber 42 via a support plate 37 extending in the horizontal direction. The front wall 33 is divided into a lower cover 33 a facing the transfer chamber 41 and an upper cover 33 b facing the FFU installation chamber 42. Similarly, the rear wall 34 is divided into a lower cover 34 a facing the transfer chamber 41 and an upper cover 34 b facing the FFU installation chamber 42. The right and left walls (not shown) have the same configuration.

蓋體33a、33b、34a、34b等之各蓋體係對於構成框體2之未圖示的框體而言拆裝自由地加以構成。由安裝各蓋體者，框體2之內部空間則作為密閉狀態。另一方面，由拆除各蓋體者，開放框體2之內部空間，可進行維護等者。Each cover system such as the cover bodies 33a, 33b, 34a, 34b and the like is detachably configured for a frame body (not shown) constituting the frame body 2. By installing each cover, the internal space of the frame 2 is closed. On the other hand, the person who removes each cover opens the internal space of the frame 2 and can perform maintenance and the like.

對於FFU設置室42係設置有配置於支持板37上之FFU(風扇過濾單元)44，和配置於FFU 44上之化學過濾器45。FFU 44係具有風扇44a與過濾器44b。FFU 44係經由風扇44a而生成朝向下方的氣流，經由過濾器44b而除去含於氣流之灰塵。化學過濾器45係例如，為了除去自基板處理裝置6帶入於EFEM 1內之活性氣體等之構成。經由FFU 44及化學過濾器45所清淨化的氣流則自FFU設置室42，藉由形成於支持板37之開口37a而送出於搬送室41。送出於搬送室41的氣流係形成層流，流動於下方。The FFU installation room 42 is provided with a FFU (fan filter unit) 44 disposed on the support plate 37 and a chemical filter 45 disposed on the FFU 44. The FFU 44 includes a fan 44a and a filter 44b. The FFU 44 generates a downward airflow through a fan 44a, and removes dust contained in the airflow through a filter 44b. The chemical filter 45 is configured, for example, to remove an active gas or the like introduced into the EFEM 1 from the substrate processing apparatus 6. The air flow cleaned by the FFU 44 and the chemical filter 45 is sent from the FFU installation chamber 42 through the opening 37 a formed in the support plate 37 to the transfer chamber 41. The air flow sent out from the transfer chamber 41 forms a laminar flow and flows downward.

對於EFEM 1(框體2)之內部空間40係形成有為了使氮循環的循環路徑。此循環路徑係自FFU設置室42送出於下方的氮則呈自搬送室41之下端部歷經返還路徑43而返回至FFU設置室42地加以構成(參照圖2之箭頭)。返還路徑43係形成於柱23，導入導管27，及支持板37。柱23係亦作為框體2之構造構件而使用，而於內部形成有中空空間23a。對於柱23之下端部係安裝有導入導管27。形成於導入導管27內之導入路徑27a係與柱23之中空空間23a連通。另外，對於支持板37係形成有連接柱23之中空空間23a與FFU設置室42的流路37b。返還路徑43係具有連結導入導管27之導入路徑27a，和柱23之中空空間23a，和支持板37之流路37b的構成。The internal space 40 of EFEM 1 (frame 2) has a circulation path for circulating nitrogen. This circulation path is configured such that nitrogen sent from the FFU installation chamber 42 to the lower side returns to the FFU installation chamber 42 through the return path 43 from the lower end of the transfer chamber 41 (see the arrow in FIG. 2). The return path 43 is formed in the column 23, the introduction duct 27, and the support plate 37. The column 23 is also used as a structural member of the frame body 2, and a hollow space 23a is formed inside. An introduction duct 27 is attached to the lower end of the column 23. The introduction path 27 a formed in the introduction duct 27 communicates with the hollow space 23 a of the column 23. In addition, the support plate 37 is formed with a flow path 37 b connecting the hollow space 23 a of the pillar 23 and the FFU installation chamber 42. The return path 43 has a configuration in which the introduction path 27a connecting the introduction duct 27, the hollow space 23a of the column 23, and the flow path 37b of the support plate 37 are connected.

對於導入導管27內係配置有風扇46。當驅動風扇46時，將到達至搬送室41之下端部的氮，吸入於返還路徑43而送出於上方，再返回至FFU設置室42。返回至FFU設置室42的氮係經由FFU 44或化學過濾器45而加以清淨化，再次送出於搬送室41。由以上作為，氮則成為可循環在EFEM 1之內部空間40。A fan 46 is arranged in the introduction duct 27. When the fan 46 is driven, nitrogen reaching the lower end portion of the transfer chamber 41 is sucked into the return path 43 and sent upward, and then returned to the FFU installation chamber 42. The nitrogen system returned to the FFU installation chamber 42 is cleaned through the FFU 44 or the chemical filter 45 and sent out of the transfer chamber 41 again. From the above, nitrogen becomes the internal space 40 which can be circulated in the EFEM 1.

EFEM 1係內部空間40則作為氮環境之故，為了維護等而突然開啟蓋，開放內部空間40時，而有運算子引起窒息之虞。為了避免此，對於EFEM 1係設置有連鎖機構58(參照圖3)。當控制裝置5將連鎖機構58解鎖時，可開啟框體2的蓋體，但將連鎖機構58上鎖時係無法開啟蓋體。The EFEM 1 series internal space 40 is used as a nitrogen environment. When the cover is suddenly opened for maintenance, etc., the internal space 40 may be suffocated by an operator. To avoid this, an interlocking mechanism 58 is provided for the EFEM 1 series (see FIG. 3). When the control device 5 unlocks the interlocking mechanism 58, the cover of the frame 2 can be opened, but when the interlocking mechanism 58 is locked, the cover cannot be opened.

(氣體供給控制)
在如以上所構成之EFEM 1中，經由以氮而置換內部空間40之環境氣之時，可將內部空間40(特別是搬送室41)的氧濃度及濕度維持成目標值以下。在本實施形態中，氧濃度的目標值則作為100ppm，而作為濕度的目標值，將露點溫度作為設定為-70℃者。當然，此等目標值係可作適宜變更，而亦可以露點溫度以外的指標而設定濕度的目標值。(Gas supply control)
In the EFEM 1 configured as described above, when the ambient gas in the internal space 40 is replaced with nitrogen, the oxygen concentration and humidity of the internal space 40 (especially the transfer chamber 41) can be maintained below a target value. In this embodiment, the target value of the oxygen concentration is set to 100 ppm, and the target value of the humidity is set to a dew point temperature of -70 ° C. Of course, these target values can be appropriately changed, and the target value of humidity can also be set by indexes other than the dew point temperature.

圖3係顯示為了進行氣體供給控制之EFEM系統10的構成之模式圖。EFEM系統10係經由EFEM 1，和為了供給及排出氣體於EFEM 1之各手段而加以構成。對於EFEM 1係連接有氮供給路徑61，而自設置於設施之氮供給源62，藉由氮供給路徑61而供給氮於EFEM 1之內部空間40。對於氮供給路徑61係設置有閥63，而控制裝置5則由控制閥63之開度者，加以調整氮的供給量。FIG. 3 is a schematic diagram showing the configuration of the EFEM system 10 for gas supply control. The EFEM system 10 is configured via EFEM 1 and various means for supplying and exhausting gas to and from EFEM 1. The EFEM 1 is connected to a nitrogen supply path 61, and nitrogen is supplied from the nitrogen supply source 62 installed in the facility to the internal space 40 of the EFEM 1 through the nitrogen supply path 61. The nitrogen supply path 61 is provided with a valve 63, and the control device 5 adjusts the supply amount of nitrogen by controlling the opening degree of the valve 63.

另外，對於EFEM 1係連接有CDA(Clean Dry Air：乾燥空氣)供給路徑71，而自設置於設施之CDA供給源72，藉由CDA供給路徑71而供給CDA於EFEM 1之內部空間40。對於CDA供給路徑71係設置有閥73，而控制裝置5則由控制閥73之開度者，加以調整CDA的供給量。對於CDA供給路徑71係更設置有除濕過濾器74。經由除濕過濾器74而更加除濕自CDA供給源72所供給之CDA之時，可供給更低濕度之CDA者。然而，在圖3中，記載著在途中將氮供給路徑61與CDA供給路徑71合流之構成，但將氮供給路徑61及CDA供給路徑71各個別地連接於EFEM 1之構成亦可。In addition, a CDA (Clean Dry Air) supply path 71 is connected to the EFEM 1 system, and a CDA supply source 72 installed in the facility supplies the CDA to the internal space 40 of the EFEM 1 through the CDA supply path 71. The CDA supply path 71 is provided with a valve 73, and the control device 5 adjusts the CDA supply amount by controlling the opening of the valve 73. The CDA supply path 71 is further provided with a dehumidifying filter 74. When the CDA supplied from the CDA supply source 72 is further dehumidified through the dehumidifying filter 74, a CDA having a lower humidity can be supplied. However, FIG. 3 illustrates a configuration in which the nitrogen supply path 61 and the CDA supply path 71 are merged on the way, but the configuration in which the nitrogen supply path 61 and the CDA supply path 71 are separately connected to the EFEM 1 may be used.

更且，對於EFEM 1係連接有排氣路徑81，而可自EFEM1之內部空間40排出氣體者。對於排氣路徑81係設置有閥82，而控制裝置5則由控制閥82之開度者，加以調整氣體的排出量。Furthermore, the EFEM 1 is connected to the exhaust path 81 and can discharge gas from the internal space 40 of the EFEM 1. The exhaust path 81 is provided with a valve 82, and the control device 5 controls the opening of the valve 82 to adjust the gas discharge amount.

在如此所構成之EFEM系統10中，對於EFEM 1之通常稼動時(晶圓W之搬送時)，係未供給CDA於內部空間40，而加以供給氮。控制裝置5係作為成保持關閉閥73，因應來自氧濃度計55及濕度計(露點溫度計)57之輸出而控制閥63的開度。由如此作為而調整對於內部空間40之氮的供給量者，將各內部空間40之氧濃度及露點溫度維持為目標值以下。In the EFEM system 10 configured as described above, for the normal operation of the EFEM 1 (when the wafer W is transferred), the CDA is not supplied to the internal space 40, and nitrogen is supplied. The control device 5 serves as a holding and closing valve 73, and controls the opening degree of the valve 63 in response to the output from the oxygen concentration meter 55 and the hygrometer (dew point thermometer) 57. In this way, the supply amount of nitrogen to the internal space 40 is adjusted, and the oxygen concentration and the dew point temperature of each internal space 40 are maintained below the target values.

另外，對於EFEM 1之通常稼動時，EFEM 1之內部空間40的壓力則維持為較大氣壓稍微高之微陽壓。經由此，防止自EFEM 1之外部，空氣流入至內部空間40者。控制裝置5係因應來自壓力計56之輸出而控制閥82之開度。由如此作為而調整自內部空間40之氣體的排出量者，將內部空間40之壓力維持為微陽壓。具體而言係1Pa(G)~3000Pa(G)之範圍內，而理想為3Pa(G)~500Pa(G)、更理想為5Pa(G)~100Pa(G)。在本實施形態中，呈成為10Pa(G)之差壓進行調整。In addition, during the normal operation of the EFEM 1, the pressure in the internal space 40 of the EFEM 1 is maintained at a slightly positive pressure that is slightly higher than the atmospheric pressure. This prevents air from flowing into the inner space 40 from outside the EFEM 1. The control device 5 controls the opening degree of the valve 82 in response to the output from the pressure gauge 56. By doing so, the amount of gas discharged from the internal space 40 is adjusted to maintain the pressure of the internal space 40 at a slightly positive pressure. Specifically, it is in a range of 1 Pa (G) to 3000 Pa (G), and is preferably 3 Pa (G) to 500 Pa (G), and more preferably 5 Pa (G) to 100 Pa (G). In this embodiment, the pressure is adjusted to a differential pressure of 10 Pa (G).

(維護時之氣體供給控制)
對於在維護等，開放EFEM 1之內部空間40時，或在維護等之結束後，將EFEM 1之內部空間40返回至氮環境氣時，係進行與通常稼動時不同之控制。圖4係顯示維護時之氣體供給控制之流程圖。當輸入經由運算子而進行維護之內容的信號時，控制裝置5係關閉閥63之同時，開啟閥73，開始供給CDA於EFEM 1之內部空間40(步驟S11)。之後，內部空間40之氧濃度則成為特定值(例如，19.5%)以上(在步驟S12為YES)，當成為可完全地開放內部空間40之狀態時，控制裝置5係將連鎖機構58解鎖(步驟S13)。(Gas supply control during maintenance)
When the internal space 40 of EFEM 1 is opened during maintenance, etc., or when the internal space 40 of EFEM 1 is returned to the nitrogen ambient gas after maintenance, etc., the control is performed differently from the normal operation time. Fig. 4 is a flowchart showing the gas supply control during maintenance. When a signal is input to perform maintenance through an operator, the control device 5 closes the valve 63 and opens the valve 73 to start supplying the CDA to the internal space 40 of the EFEM 1 (step S11). After that, the oxygen concentration in the internal space 40 becomes a specific value (for example, 19.5%) or more (YES in step S12). When the internal space 40 is fully opened, the control device 5 unlocks the interlocking mechanism 58 ( Step S13).

當連鎖機構58解鎖時，運算子係開啟EFEM 1之蓋體而開放內部空間40，進行必要的維護(步驟S14)。期間亦持續對於內部空間40之CDA的供給。經由此，可抑制在維護中，內部空間40之濕度上升者。當維護結束時，運算子係關閉EFEM 1之蓋體而將內部空間40作為成密閉狀態，對於控制裝置5輸入維護結束之內容。接受此等，控制裝置5係將連鎖機構58進行上鎖(步驟S15)。When the chain mechanism 58 is unlocked, the operator opens the cover of the EFEM 1 to open the internal space 40 and performs necessary maintenance (step S14). During this period, the supply of CDA to the internal space 40 continued. As a result, it is possible to suppress a rise in humidity of the internal space 40 during maintenance. When the maintenance is completed, the operator closes the cover of the EFEM 1 and sets the internal space 40 as a closed state, and inputs the content of the maintenance completion to the control device 5. In response to this, the control device 5 locks the interlocking mechanism 58 (step S15).

在密閉EFEM 1之內部空間40之後，亦持續對於內部空間40之CDA的供給。因經由CDA之供給而除去內部空間40之水分之故，露點溫度係下降，但內部空間40之氧濃度係與大氣幾乎保持相同。當內部空間40之露點溫度下降至特定值(例如，-50℃)時(在步驟S16為YES)，控制裝置5係關閉閥73之同時，開啟閥63，開始供給氮於內部空間40(步驟S17)。之後，當將各內部空間40之露點溫度及氧濃度降低至目標值時(-70℃、100ppm)(在步驟S18為YES)，再開啟EFEM1之通常稼働(步驟S19)。After the internal space 40 of the EFEM 1 is closed, the supply of the CDA to the internal space 40 is also continued. Since the moisture in the internal space 40 is removed by the supply of the CDA, the dew point temperature decreases, but the oxygen concentration in the internal space 40 remains almost the same as the atmosphere. When the dew point temperature of the internal space 40 drops to a specific value (for example, -50 ° C) (YES in step S16), the control device 5 closes the valve 73 and opens the valve 63 to start supplying nitrogen to the internal space 40 (step S17). After that, when the dew point temperature and oxygen concentration of each internal space 40 are reduced to the target values (-70 ° C, 100 ppm) (YES in step S18), the normal operation of EFEM1 is turned on (step S19).

在此，將一旦大氣開放的EFEM 1之內部空間40的露點溫度下降至目標值係需要較將氧濃度下降至目標值為長的時間。雖說氧係如以氮進行置換而解決，但為了在進行大氣開放時，除去吸附於EFEM 1內之裝置或配線等之水分，係因有必要以大量的乾燥氣體(氮或CDA)而析出水分之必要之故。隨之，如本實施形態，如可以CDA僅使濕度(露點溫度)作某種程度降低，可大幅削減氮的供給量者。其結果，可抑制EFEM1之運行成本。然而，在本實施形態中，作成當露點溫度下降至較目標值(-70℃)為高的特定值(-50℃)時，停止CDA之供給而開始氮的供給者，但露點溫度下降至目標值之後，切換為氮的供給亦可。Here, it takes a longer time to decrease the dew point temperature of the internal space 40 of the EFEM 1 once the atmosphere is opened to the target value than to reduce the oxygen concentration to the target value. Although the oxygen system is solved by replacing with nitrogen, in order to remove the moisture adsorbed to the equipment or wiring in EFEM 1 when the atmosphere is opened, it is necessary to precipitate the water with a large amount of dry gas (nitrogen or CDA). Necessary reason. Accordingly, as in the present embodiment, if the CDA can reduce only the humidity (dew point temperature) to a certain extent, the amount of nitrogen supplied can be significantly reduced. As a result, the running cost of EFEM1 can be suppressed. However, in the present embodiment, when the dew point temperature drops to a specific value (-50 ° C.) higher than the target value (-70 ° C.), the supply of nitrogen is stopped and the supplier of nitrogen is started, but the dew point temperature drops to After the target value, the supply of nitrogen may be switched.

(效果)
有關本實施形態之EFEM系統10係經由以氮(非活性氣體)而置換EFEM 1之內部空間40的環境氣之時，將內部空間40的氧濃度及濕度(露點溫度)維持成目標值以下之構成，其中，具備：可供給氮於內部空間40之氮供給路徑61 (非活性氣體供給路徑)，和切換為自氮供給路徑61供給氮於內部空間40之狀態，與未供給之狀態的閥63(第1切換部)，和可供給CDA(乾燥空氣)於內部空間40之CDA供給路徑71(乾燥空氣供給路徑)，和切換為自CDA供給路徑71供給CDA於內部空間40之狀態，與未供給之狀態的閥73(第2切換部)。如根據具有如此構成之EFEM系統10，經由於大氣開放之EFEM 1的內部空間40，取代氮而供給CDA之時，可降低內部空間40的濕度者。隨之，可削減對於將內部空間40的濕度下降至目標值而成為必要之氮的供給量者。(effect)
When the EFEM system 10 according to this embodiment replaces the ambient gas in the internal space 40 of the EFEM 1 with nitrogen (inert gas), the oxygen concentration and humidity (dew point temperature) of the internal space 40 are maintained below a target value. The structure includes a nitrogen supply path 61 (inactive gas supply path) capable of supplying nitrogen to the internal space 40, and a valve that switches between a state in which nitrogen is supplied to the internal space 40 from the nitrogen supply path 61, and a valve that is not supplied. 63 (first switching section), and a state in which the CDA supply path 71 (dry air supply path) capable of supplying CDA (dry air) to the internal space 40 is switched to a state in which the CDA supply path 71 supplies CDA to the internal space 40, and Non-supplying valve 73 (second switching section). According to the EFEM system 10 having such a configuration, when the internal space 40 of the EFEM 1 which is open to the atmosphere is supplied to the CDA instead of nitrogen, the humidity of the internal space 40 can be reduced. Accordingly, it is possible to reduce the amount of nitrogen that is necessary to reduce the humidity of the internal space 40 to a target value.

在本實施形態中，控制裝置5(控制部)係作為呈在密閉大氣開放之內部空間40之後，自CDA供給路徑71供給CDA於內部空間40(相當於本發明之「乾燥空氣供給工程」)，內部空間40之濕度則降低至特定值時，停止CDA之供給，自氮供給路徑61供給氮(相當於本發明之「非活性氣體供給工程」)。如此，如作為呈在經由CDA而將內部空間40的濕度，下降某種程度之後，供給氮時，可有效果地削減對於將濕度降低至目標值而成為必要之非活性氣體的供給量者。In the present embodiment, the control device 5 (control unit) serves as an internal space 40 opened in a closed atmosphere, and then supplies CDA to the internal space 40 from the CDA supply path 71 (corresponding to the "dry air supply process" of the present invention) When the humidity of the internal space 40 decreases to a specific value, the supply of CDA is stopped, and nitrogen is supplied from the nitrogen supply path 61 (corresponding to the "inert gas supply process" of the present invention). As described above, when the humidity of the internal space 40 is reduced to a certain extent via the CDA, the supply of nitrogen can effectively reduce the amount of inactive gas required to reduce the humidity to a target value.

在本實施形態中，控制裝置5係大氣開放內部空間40之間，自CDA供給路徑71供給CDA於內部空間40。如此，在經由維護等而大氣開放內部空間40之間，經由將CDA供給至內部空間40之時，運算子可安全地進行作業之同時，可抑制內部空間40的濕度上升者。因此，可減少在大氣開放後殘存於內部空間40之水分，可縮短對於將濕度降低至目標值所需的時間。隨之，可使EFEM 1之稼動率提升。In the present embodiment, the control device 5 is open between the internal spaces 40 in the atmosphere, and supplies the CDA to the internal space 40 from the CDA supply path 71. In this way, when the interior space 40 is opened to the atmosphere through maintenance or the like, and when the CDA is supplied to the interior space 40, the operator can safely perform operations while suppressing a rise in humidity in the interior space 40. Therefore, the moisture remaining in the internal space 40 after the atmosphere is opened can be reduced, and the time required to reduce the humidity to the target value can be shortened. As a result, the EFEM 1's crop rate can be increased.

在本實施形態中，對於CDA供給路徑71，設置有為了更加將CDA除濕之除濕過濾器74。由設置如此之除濕過濾器74者，因可供給更低濕度之CDA之故，可經由CDA而有效率地降低內部空間40的濕度者。In the present embodiment, a CDA supply path 71 is provided with a dehumidifying filter 74 to further dehumidify the CDA. By providing such a dehumidifying filter 74, since a CDA having a lower humidity can be supplied, the humidity of the internal space 40 can be efficiently reduced through the CDA.

(其他的實施形態)
對於上述實施形態加上種種變更之變更例，加以說明。(Other embodiments)
A modification example in which the above embodiment is added with various changes will be described.

(1)在上述實施形態中，作成控制裝置5，以自動控制閥63，73之構成。但，作為呈運算子則經由以手動開關閥63，73之時，進行氣體供給控制亦可。(1) In the above-mentioned embodiment, the control device 5 is constructed so that the valves 63 and 73 are automatically controlled. However, the gas supply control may be performed when the valves 63 and 73 are manually opened and closed as a display operator.

(2)在上述實施形態中，作成於CDA供給路徑71設置除濕過濾器74之構成。但，作為呈將除濕過濾器74設置於EFEM 1之內部空間40(例如，返還路徑43)亦可。另外，未必必須設置除濕過濾器74，而省略除濕過濾器74亦可。(2) In the embodiment described above, the CDA supply path 71 is provided with a dehumidifying filter 74. However, the dehumidification filter 74 may be provided in the internal space 40 (for example, the return path 43) of the EFEM 1. In addition, it is not necessary to provide the dehumidifying filter 74, and the dehumidifying filter 74 may be omitted.

(3)在上述實施形態中，作成在維護等，將EFEM 1之內部空間40進行大氣開放之間，供給CDA於內部空間40之構成。但，未必必須在將內部空間40進行大氣開放之間，供給CDA者。(3) In the above embodiment, a configuration is provided in which the internal space 40 of the EFEM 1 is opened to the atmosphere during maintenance and the like, and the CDA is supplied to the internal space 40. However, it is not necessary to supply the CDA to the atmosphere before the internal space 40 is opened to the atmosphere.

(4)如圖5所示，作為呈於EFEM 1之內部空間40，設置加熱器59亦可。由設置加熱器59者，可增大EFEM1內之飽和水蒸氣量，而容易使吸附於裝置或配線等之水分蒸發。其結果，可縮短將內部空間40之濕度下降至目標值所需之時間之同時，可削減乾燥氣體(氮或CDA)之消耗量者。當考慮到於許多裝置或配線等配置於框體2之底面時，將加熱器59設置於框體2之底面附近者為佳，但當然亦可設置於其他處。(4) As shown in FIG. 5, a heater 59 may be provided as the internal space 40 provided in the EFEM 1. By installing the heater 59, the amount of saturated water vapor in the EFEM1 can be increased, and the moisture adsorbed on the device or wiring can be easily evaporated. As a result, while reducing the time required to reduce the humidity of the internal space 40 to the target value, it is possible to reduce the consumption of dry gas (nitrogen or CDA). When it is considered that many devices, wirings, and the like are arranged on the bottom surface of the casing 2, it is preferable to install the heater 59 near the bottom surface of the casing 2, but of course, it may be disposed elsewhere.

(5)如圖6所示，作為呈於CDA供給路徑71之途中，設置自CDA供給路徑71分歧之分歧路徑75，設置氮富化過濾器76於分歧路徑75亦可。氮富化過濾器76係自空氣除去氧而可提高氮濃度之過濾器。對於CDA供給路徑71與分歧路徑75之分歧部，係設置為了切換CDA通過CDA供給路徑71，或通過分歧路徑75之切換閥77(相當於本發明之「第3切換部」)。如根據如此之構成，因可將低濕度且低氧濃度之CDA供給至內部空間40之故，在供給CDA至內部空間40而降低濕度時，同時亦可降低氧濃度者。隨之，可更有效果地削減對於將氧濃度及濕度下降至目標值而成為必要之氮的供給量者。(5) As shown in FIG. 6, a branch path 75 branching from the CDA supply path 71 may be provided in the middle of the CDA supply path 71, and a nitrogen enrichment filter 76 may be provided on the branch path 75. The nitrogen-enriched filter 76 is a filter that removes oxygen from the air and increases the nitrogen concentration. A branching portion of the CDA supply path 71 and the branching path 75 is provided with a switching valve 77 (which corresponds to the "third switching part" of the present invention) for switching the CDA through the CDA supply path 71 or the branching path 75. According to such a configuration, since the CDA having a low humidity and a low oxygen concentration can be supplied to the internal space 40, when the CDA is supplied to the internal space 40 to reduce the humidity, the oxygen concentration can also be reduced at the same time. Accordingly, it is possible to more effectively reduce the amount of nitrogen that is necessary to reduce the oxygen concentration and humidity to the target values.

(6)在上述實施形態中，作成作為本發明之非活性氣體而供給氮者。但，非活性氣體係不限定於氮，而例如亦可作為呈供給氬等之其他非活性氣體。(6) In the above embodiment, a person who supplies nitrogen as the inert gas of the present invention is prepared. However, the inert gas system is not limited to nitrogen, and may be used as another inert gas such as argon.

1‧‧‧EFEM1‧‧‧EFEM

5‧‧‧控制裝置(控制部) 5‧‧‧control device (control section)

10‧‧‧EFEM系統 10‧‧‧EFEM system

40‧‧‧內部空間 40‧‧‧Internal space

57‧‧‧濕度計 57‧‧‧ Hygrometer

61‧‧‧氮供給路徑(非活性氣體供給路徑) 61‧‧‧Nitrogen supply path (inactive gas supply path)

63‧‧‧閥(第1切換部) 63‧‧‧ valve (first switching section)

71‧‧‧CDA供給路徑(乾燥空氣供給路徑) 71‧‧‧CDA supply path (dry air supply path)

73‧‧‧閥(第2切換部) 73‧‧‧ valve (second switching section)

74‧‧‧除濕過濾器 74‧‧‧ Dehumidifying Filter

75‧‧‧分歧路徑 75‧‧‧ divergence path

76‧‧‧氮富化過濾器 76‧‧‧ Nitrogen enriched filter

77‧‧‧切換閥(第3切換部) 77‧‧‧ switching valve (3rd switching section)

圖1係有關本實施形態之EFEM及其周邊的概略性平面圖。FIG. 1 is a schematic plan view of an EFEM and its surroundings according to this embodiment.

圖2係有關本實施形態之EFEM之剖面圖。 FIG. 2 is a cross-sectional view of an EFEM according to this embodiment.

圖3係顯示為了進行氣體供給控制之EFEM系統的構成之模式圖。 Fig. 3 is a schematic diagram showing the configuration of an EFEM system for gas supply control.

圖4係顯示維護時之氣體供給控制之流程圖。 Fig. 4 is a flowchart showing the gas supply control during maintenance.

圖5係顯示EFEM系統之變形例的模式圖。 FIG. 5 is a schematic diagram showing a modified example of the EFEM system.

圖6係顯示EFEM系統之變形例的模式圖。 FIG. 6 is a schematic diagram showing a modified example of the EFEM system.

Claims (7)

一種EFEM系統，係經由以非活性氣體而置換EFEM之內部空間的環境氣之時，將前述內部空間的氧濃度及濕度維持為目標值以下之EFEM系統，其特徵為具備： 可供給前述非活性氣體於前述內部空間的非活性氣體供給路徑， 和切換成自前述非活性氣體供給路徑，供給前述非活性氣體於前述內部空間的狀態與未供給之狀態的第1切換部， 和可供給乾燥空氣於前述內部空間之乾燥空氣供給路徑， 和切換成自前述乾燥空氣供給路徑，供給前述乾燥空氣於前述內部空間的狀態與未供給之狀態的第2切換部者。An EFEM system is an EFEM system that maintains the oxygen concentration and humidity of the internal space below the target value when the ambient gas in the internal space of EFEM is replaced with an inert gas, and is characterized by: An inert gas supply path capable of supplying the inert gas to the internal space, And a first switching section that switches between a state in which the inert gas is supplied to the internal space and a state in which it is not supplied from the inert gas supply path, And a dry air supply path that can supply dry air to the aforementioned internal space, And a second switching unit that switches between a state in which the dry air is supplied to the internal space and a state in which the dry air is not supplied from the dry air supply path. 如申請專利範圍第1項記載之EFEM系統，其中，更具備：測定前述內部空間的濕度之濕度計， 和控制前述第1切換部及前述第2切換部之控制部; 前述控制部係 在密閉大氣開放之前述內部空間之後，自前述乾燥空氣供給路徑，供給前述乾燥空氣於前述內部空間，前述內部空間的濕度則下降至特定值時，停止前述乾燥空氣的供給，再自前述非活性氣體供給路徑，供給前述非活性氣體者。For example, the EFEM system described in item 1 of the patent application scope further includes a hygrometer for measuring the humidity of the internal space, And a control section that controls the aforementioned first switching section and the aforementioned second switching section; Aforementioned control department After the internal space opened in a closed atmosphere, the dry air is supplied from the dry air supply path to the internal space, and when the humidity of the internal space drops to a specific value, the supply of the dry air is stopped, and then the inactive The gas supply path supplies the aforementioned inert gas. 如申請專利範圍第2項記載之EFEM系統，其中，前述控制部係在大氣開放前述內部空間之間，自前述乾燥空氣供給路徑，供給前述乾燥空氣於前述內部空間者。For example, in the EFEM system described in the second item of the patent application scope, the control unit is configured to supply the dry air from the dry air supply path to the internal space from the dry air supply path. 如申請專利範圍第1項至第3項任一項記載之EFEM系統，其中，於前述乾燥空氣供給路徑，加以設置為了更將前述乾燥空氣進行除濕之除濕過濾器者。According to the EFEM system described in any one of claims 1 to 3, a dehumidifying filter is provided in the dry air supply path to further dehumidify the dry air. 如申請專利範圍第1項至第4項任一項記載之EFEM系統，其中，前述非活性氣體供給路徑係作為前述非活性氣體而供給氮的構成， 更具備：自前述乾燥空氣供給路徑分歧的分歧路徑， 和設置於前述分歧路徑，自前述乾燥空氣除去氧，提高氮濃度之氮富化過濾器， 和切換前述乾燥空氣通過前述乾燥空氣供給路徑，或通過前述分歧路徑之第3切換部者。According to the EFEM system described in any one of claims 1 to 4, in which the inert gas supply path is configured to supply nitrogen as the inert gas, It further includes a branching path that diverges from the dry air supply path, And a nitrogen enrichment filter installed on the branch path to remove oxygen from the dry air and increase the nitrogen concentration, And switching the dry air through the dry air supply path or the third switching section of the branch path. 一種EFEM系統的氣體供給方法，係經由以非活性氣體而置換EFEM之內部空間的環境氣之時，將前述內部空間的氧濃度及濕度維持成目標值以下之EFEM系統的氣體供給方法，其特徵為具備： 在密閉大氣開放之前述內部空間之後，將乾燥空氣供給至前述內部空間的乾燥空氣供給工程， 和當前述內部空間的濕度降低至特定值時，停止前述乾燥空氣的供給，供給前述非活性氣體之非活性氣體供給工程者。An EFEM system gas supply method is an EFEM system gas supply method that maintains the oxygen concentration and humidity of the internal space below a target value when the ambient gas in the internal space of EFEM is replaced with an inert gas. To have: A dry air supply process for supplying dry air to the aforementioned internal space after the aforementioned internal space is opened in a closed atmosphere, And when the humidity of the internal space is reduced to a specific value, the supply of the dry air is stopped, and an inert gas supply engineer who supplies the inert gas is provided. 如申請專利範圍第6項記載之EFEM系統的氣體供給方法，其中，在大氣開放前述內部空間之間，供給前述乾燥空氣於前述內部空間者。The gas supply method of the EFEM system according to item 6 of the scope of application for a patent, wherein the dry air is supplied to the internal space when the internal space is opened to the atmosphere.
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