TWI821138B - Equipment front-end module (EFEM) - Google Patents

Equipment front-end module (EFEM) Download PDF

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TWI821138B
TWI821138B TW112110392A TW112110392A TWI821138B TW I821138 B TWI821138 B TW I821138B TW 112110392 A TW112110392 A TW 112110392A TW 112110392 A TW112110392 A TW 112110392A TW I821138 B TWI821138 B TW I821138B
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transfer chamber
gas
inert gas
aforementioned
upper space
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TW202331911A (en
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河合俊宏
小倉源五郎
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日商昕芙旎雅股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766Mechanical parts of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775Docking arrangements

Abstract

本發明係一種設備前端模組(EFEM),其課題為在搬送室內,成為容易垂直地流動非活性氣體,而作為不易揚起塵埃。 解決手段為EFEM係包含:構成搬送室於內部之框體(2),和在框體(2)內,為了構成FFU設置室(42)於搬送室的上方之支持板(37),和為了供給氮於FFU設置室(42)之供給管(47),和呈各被覆形成於支持板(37)之連通口(37a)地加以配置之3個風扇。供給管(47)係具有在FFU設置室(42)內加以分散配置之3個供給口(47a)。 The present invention is an equipment front-end module (EFEM), the subject of which is to make it easier for inert gas to flow vertically in a transfer chamber and to make it less likely to raise dust. The solution is that the EFEM system includes: a frame (2) that constitutes the transfer chamber inside, and a support plate (37) above the transfer chamber in order to form an FFU installation chamber (42) inside the frame (2), and in order to A supply pipe (47) that supplies nitrogen to the FFU installation chamber (42), and three fans are arranged so as to cover the communication ports (37a) formed in the support plate (37). The supply pipe (47) has three supply ports (47a) dispersedly arranged in the FFU installation chamber (42).

Description

設備前端模組(EFEM)Equipment front-end module (EFEM)

本發明係有關供給非活性氣體於閉鎖的搬送室,可置換為非活性氣體環境之EFEM(Equipment Front End Module)。The present invention relates to an EFEM (Equipment Front End Module) that supplies inert gas to a closed transfer chamber and can be replaced with an inert gas environment.

對於專利文獻1係對於包含:載置收容有晶圓(半導體基板)之FOUP(Front-Opening Unified Pod)的裝載埠,和由連接裝載埠於設置在前面壁的開口者而加以閉鎖,形成有進行晶圓的搬送之搬送室的框體;在對於晶圓施以特定處理之處理裝置與FOUP之間進行晶圓的授受之EFEM加以記載。Patent Document 1 has a loading port that contains a FOUP (Front-Opening Unified Pod) that accommodates wafers (semiconductor substrates) and is connected to an opening provided on the front wall and is closed to form a The frame of the transfer chamber for transferring wafers; the EFEM that transfers wafers between the processing equipment that performs specific processing on the wafers and the FOUP are described.

以往,對於在晶圓上所製造之半導體電路之搬送室內的氧或水分等的影響係為少,但近年,伴隨著半導體電路之更細微化,此等的影響則明顯化。因此,記載於專利文獻1之EFEM係以非活性氣體的氮填充搬送室內地加以構成。具體而言,EFEM係具有:以為了在框體的內部使氮循環之搬送室與氣體返還路徑所構成之循環流路,和供給氮於氣體返還路徑的上部空間之氣體供給手段,和配置於氣體返還路徑之上部空間,將非活性氣體送出於搬送室的複數之風扇,和自氣體返還路徑之下部,排出氮之氣體排出手段。氮係因應循環流路內的氧濃度等之變動而加以適宜供給及排出。經由此,可將搬送室內保持為氮環境氣者。 [先前技術文獻] [專利文獻] In the past, the influence of oxygen, moisture, etc. in the transfer chamber on semiconductor circuits manufactured on wafers has been small. However, in recent years, as semiconductor circuits have become more miniaturized, these effects have become more significant. Therefore, the EFEM described in Patent Document 1 is configured so that the transfer chamber is filled with nitrogen as an inert gas. Specifically, the EFEM system has a circulation flow path composed of a transfer chamber and a gas return path for circulating nitrogen inside the frame, a gas supply means for supplying nitrogen to the upper space of the gas return path, and a gas supply means arranged in the gas return path. A plurality of fans are used to send the inert gas out of the transfer chamber in the upper space of the gas return path, and a gas discharge means is used to discharge nitrogen from the lower part of the gas return path. Nitrogen is appropriately supplied and discharged in response to changes in the oxygen concentration in the circulation flow path. Through this, the transfer chamber can be maintained in a nitrogen atmosphere. [Prior technical literature] [Patent Document]

[專利文獻1] 日本特開2015-146349號公報[Patent Document 1] Japanese Patent Application Publication No. 2015-146349

[發明欲解決之課題][Problem to be solved by the invention]

但在記載於上述專利文獻1之EFEM中,係氣體供給手段連接於氣體返還路徑之上部空間,自其連接處,即1處之供給口加以供給非活性氣體之故,而在上部空間內,風扇的吸入側之壓力則於各風扇產生不均,對於自各風扇至搬送室的供給量產生不均。也就是,自複數的風扇之排列方向的一方側,加以供給非活性氣體的情況,對於一方的風扇係雖供給有充份量的非活性氣體,但對於另一方側的風扇之非活性氣體的供給量則比較於一方而變少。也就是在上部空間內,一方的風扇之吸入側的壓力則變為較另一方的風扇為大,而對於自各風扇至搬送室的非活性氣體的供給量產生不均。其結果,對於在搬送室的非活性氣體的氣流產生混亂,產生有容易揚起灰塵之問題。However, in the EFEM described in the above-mentioned Patent Document 1, the gas supply means is connected to the upper space of the gas return path, and the inert gas is supplied from the connection point, that is, one supply port. In the upper space, The pressure on the suction side of the fan is uneven among the fans, and the supply amount from each fan to the transfer chamber is uneven. That is, when inert gas is supplied from one side of the arrangement direction of the plurality of fans, a sufficient amount of inert gas is supplied to one fan, but the supply of inert gas to the fan on the other side is limited. The quantity is less than one side. That is, in the upper space, the pressure on the suction side of one fan becomes larger than that of the other fan, and the supply amount of the inert gas from each fan to the transfer chamber becomes uneven. As a result, the air flow of the inert gas in the transfer chamber is disrupted, causing a problem that dust is easily raised.

因此,在本發明之目的係提供:容易將非活性氣體垂直地流入至搬送室內,而可不易揚起灰塵之EFEM者。 [為了解決課題之手段] Therefore, an object of the present invention is to provide an EFEM that can easily flow inert gas vertically into a transfer chamber and can hardly raise dust. [To solve the problem]

本發明之EFEM係具備:由連接裝載埠於設置在隔壁之開口者而加以閉鎖,將為了搬送基板之搬送室構成於內部的框體,和配置於前述搬送室內,進行前述基板之搬送的基板搬送裝置,和設置於前述框體內,為了構成上部空間於前述搬送室的上方之間隔構件,和為了供給非活性氣體於前述上部空間之非活性氣體之非活性氣體供給手段,和形成於前述間隔構件,使前述搬送室與前述上部空間連通之複數的連通口,和呈各被覆前述連通口地加以配置,藉由前述連通口而為了傳送前述上部空間的非活性氣體於前述搬送室的複數之送風器,和設置於前述搬送室的下部,吸引前述搬送室內之非活性氣體的氣體吸引口,和使自前述氣體吸引口所吸引之非活性氣體,返還至前述上部空間的氣體返還路徑,和為了排出前述搬送室內的氣體之氣體排出手段。並且,前述非活性氣體供給手段係具有:在前述上部空間內,加以分散配置,為了供給非活性氣體的複數之供給口。The EFEM system of the present invention includes a frame that connects a loading port to an opening provided in a partition and locks it, and has a transfer chamber for transferring substrates inside, and a substrate that is disposed in the transfer chamber to transfer the substrates. A conveying device, and an inert gas supply means for supplying inert gas to the inert gas in the above-mentioned upper space, and an inert gas supply means provided in the above-mentioned frame, and a partition member is provided above the above-mentioned transfer chamber in order to form an upper space, and is formed in the above-mentioned partition. A member, a plurality of communication openings connecting the transfer chamber and the upper space, and each of the communication openings is arranged to cover the communication openings, and the inert gas in the upper space is transferred to the plurality of transfer chambers through the communication openings. an air blower, a gas suction port provided at the lower part of the transfer chamber to suck inert gas in the transfer chamber, and a gas return path for returning the inert gas sucked from the gas suction port to the upper space, and Gas exhaust means for exhausting the gas in the transfer chamber. Furthermore, the inert gas supply means has a plurality of supply ports dispersedly arranged in the upper space for supplying the inert gas.

當經由此時,成為可將自非活性氣體供給手段供給至上部空間的非活性氣體,自複數的供給口分散進行供給者。因此,成為可遍佈全體均勻供給非活性氣體於上部空間,而在上部空間之複數的送風器之吸入側的壓力不均變小。隨之,對於自各送風器至搬送室的非活性氣體之供給量,不易產生不均。其結果,在搬送室內,成為容易垂直地流動非活性氣體,而不易揚起塵埃。Through this, the inert gas supplied from the inert gas supply means to the upper space can be distributed and supplied from a plurality of supply ports. Therefore, the inert gas can be uniformly supplied to the upper space throughout the entire space, and the pressure unevenness on the suction sides of the plurality of air blowers in the upper space becomes smaller. Accordingly, unevenness in the supply amount of the inert gas from each air blower to the transfer chamber is less likely to occur. As a result, the inert gas easily flows vertically in the transfer chamber and becomes less likely to raise dust.

在本發明中,前述供給口係在為了間隔前述上部空間與外部空間的前述框體之隔壁及前述間隔構件之任一中,呈朝向至前述供給口之距離最近的範圍,供給非活性氣體地加以構成者為佳。經由此,自供給口所供給之非活性氣體則接觸於間隔構件及隔壁之任一,其勢力則變弱之同時,沿著間隔構件及隔壁之任一而流動非活性氣體。因此,自氣體返還路徑流動至送風器的上部空間內之氣流則成為不易混亂,在上部空間的複數之送風器的吸入側之壓力不均則變更小。隨之,更抑制自各送風器至搬送室的非活性氣體之供給量不均。In the present invention, the supply port is located in any one of the partition wall and the partition member of the frame that separates the upper space and the external space, and is oriented toward a range closest to the supply port to supply the inert gas. The one that is composed is better. Through this, the inert gas supplied from the supply port contacts either the partition member or the partition wall, and its force is weakened, and the inert gas flows along either the partition member or the partition wall. Therefore, the air flow flowing from the gas return path to the upper space of the air blower becomes less likely to be disrupted, and the pressure unevenness on the suction sides of the plurality of air blowers in the upper space becomes smaller. Accordingly, uneven supply of the inert gas from each air blower to the transfer chamber is further suppressed.

另外,本發明中,前述氣體吸引口係加以複數設置於前述搬送室的下部,而前述氣體返還路徑係具有:自各複數的前述氣體吸引口朝向於上方而延伸存在的複數之第1流路,和與前述複數之第1流路連接之第2流路,更具有為了將前述第2流路內的氣體送出於前述上部空間的送出口者為佳。經由此,來自搬送室的氣體則藉由複數之第1流路,暫時流動於第2流路之後,流動至上部空間。如此,由暫時將來自複數之第1流路的氣體流動至第2流路者,成為可吸收在複數之第1流路間的氣體之流通量不均者。因此,較自各第1流路,直接送出氣體於上部空間時,來自送出口之氣體的送出量則為安定,更抑制自各送風器至搬送室之非活性氣體的供給量不均。In addition, in the present invention, a plurality of the gas suction ports are provided in the lower part of the transfer chamber, and the gas return path has a plurality of first flow paths extending upward from each of the plurality of gas suction ports, It is preferable that the second flow path connected to the plurality of first flow paths further has a delivery port for sending the gas in the second flow path out of the upper space. Through this, the gas from the transfer chamber passes through the plurality of first flow paths, temporarily flows into the second flow paths, and then flows into the upper space. In this way, by temporarily flowing the gas from the plurality of first flow paths to the second flow path, it becomes possible to absorb the uneven flow rate of the gas between the plurality of first flow paths. Therefore, compared with when the gas is directly sent to the upper space from each first flow path, the amount of gas sent from the outlet is more stable, and the uneven supply amount of the inert gas from each air blower to the transfer chamber is further suppressed.

另外,在本發明中,前述第2流路係沿著前述複數之第1流路的排列方向而延伸存在,而前述送出口係在該排列方向中,各配置於鄰接之2個前述第1流路間者為佳。經由此,自送出口至上部空間的氣體之送出量則更安定,更一層抑制自各送風器至搬送室的非活性氣體之供給量不均。In addition, in the present invention, the second flow path extends along the arrangement direction of the plurality of first flow paths, and the delivery ports are each arranged at two adjacent first flow paths in the arrangement direction. The one between the flow paths is better. Through this, the amount of gas delivered from the outlet to the upper space becomes more stable, and uneven supply of inert gas from each air blower to the transfer chamber is further suppressed.

另外,在本發明中,前述送出口係在與前述複數之送風器的排列方向交叉之交叉方向中,在與前述供給口之間,配置於夾持前述送風器的位置者為佳。經由此,自氣體返還路徑流動至送風器的上部空間內之氣流則變為不易混亂,更一層抑制自各送風器至搬送室的非活性氣體之供給量不均。Furthermore, in the present invention, it is preferable that the outlet is disposed at a position sandwiching the air blower between the outlet and the supply port in an intersecting direction intersecting the arrangement direction of the plurality of air blowers. Through this, the air flow flowing from the gas return path to the upper space of the air blower becomes less likely to be disrupted, further suppressing uneven supply of the inert gas from each air blower to the transfer chamber.

另外,本發明之EFEM係在其他的觀點中,具備:由連接裝載埠於設置在隔壁之開口者而加以閉鎖,將為了搬送基板之搬送室構成於內部的框體,和設置於前述框體內,為了構成上部空間於前述搬送室的上方之間隔構件,形成於前述間隔構件,使前述搬送室與前述上部空間連通之複數的連通口,和設置於前述連通口,為了傳送前述上部空間的氣體於前述搬送室的複數之送風器,和設置於前述搬送室的下部,吸引該搬送室內之氣體的複數之氣體吸引口,和使自各前述氣體吸引口所吸引之氣體,返還至前述上部空間的氣體返還路徑。並且,前述氣體返還路徑係具備:自前述複數之氣體吸引口延伸存在之複數的第1流路,和連接於前述複數之第1流路而自前述第1流路,流入前述氣體之同時,將前述氣體送出至前述上部空間的第2流路。In addition, in another aspect, the EFEM of the present invention is provided with a frame that connects the loading port to an opening provided in the partition and locks it, and includes a transfer chamber for transferring the substrate inside, and is provided in the frame. In order to form a partition member between the upper space above the transfer chamber, a plurality of communication ports are formed on the partition member to connect the transfer chamber and the upper space, and the communication ports are provided in order to transmit the gas in the upper space. A plurality of air blowers in the transfer chamber, a plurality of gas suction ports provided at the lower part of the transfer chamber to suck gas in the transfer chamber, and a device that returns the gas sucked from each of the gas suction ports to the upper space. Gas return path. Furthermore, the gas return path includes a plurality of first flow paths extending from the plurality of gas suction ports, and is connected to the plurality of first flow paths so that the gas flows from the first flow paths, The gas is sent to the second flow path of the upper space.

當經由此時,來自搬送室的氣體則藉由複數之第1流路,暫時流動於第2流路之後,流動至上部空間。如此,由暫時將來自複數之第1流路的氣體流動至第2流路者,成為可吸收在複數之第1流路間的氣體之流量不均者。因此,較自各第1流路,直接送出氣體於上部空間時,來自送出口之氣體的送出量則為安定,抑制自各送風器至搬送室之氣體的供給量不均。When passing through this, the gas from the transfer chamber passes through the plurality of first flow paths, temporarily flows into the second flow paths, and then flows to the upper space. In this way, by temporarily flowing the gas from the plurality of first flow paths to the second flow path, it becomes possible to absorb the uneven flow rate of the gas between the plurality of first flow paths. Therefore, compared with when the gas is directly sent to the upper space from each first flow path, the amount of gas sent from the outlet is more stable, and the uneven supply amount of gas from each air blower to the transfer chamber is suppressed.

另外,在本發明中,前述第2流路係延伸存在於與前述第1流路的延伸存在方向交叉之方向,而流動在前述氣體返還路徑的前述氣體係在自前述第1流路流動在前述第2流路時,變更其氣流的方向,且對於在自前述第2流路流入至前述上部空間時,亦變更該氣流的方向者為佳。經由此,在第2流路中,可作為緩和在第1流路的延伸存在方向的氣體的流動者。隨之,與自第1流路至上部空間,未變更氣流的方向而氣體直接流入至上部空間之情況作比較,可作為不易混亂上部空間內的氣流者。In addition, in the present invention, the second flow path extends in a direction intersecting the extending direction of the first flow path, and the gas system flowing in the gas return path flows from the first flow path. It is preferable to change the direction of the air flow when entering the second flow path, and also to change the direction of the air flow when flowing from the second flow path to the upper space. Through this, the second flow path can serve as a means to relax the flow of gas in the extending direction of the first flow path. Therefore, compared with the case where the direction of the air flow is not changed from the first flow path to the upper space and the gas flows directly into the upper space, it can be considered that the air flow in the upper space is less likely to be disturbed.

另外,在本發明中,具有:固定位置之基台部,和配置於前述基台部之上方,搬送前述基板之搬送部,更具備配置於前述搬送室內之基板搬送裝置,對於前述搬送室係配置有設置物於較經由前述搬送部而搬送基板之搬送範圍為下方,前述氣體吸引口係自垂直方向而視時,配置於未與前述基台部及前述設置物之任一重疊之位置亦可。 [發明效果] In addition, in the present invention, there is a base portion at a fixed position, a conveying portion disposed above the base portion, and conveying the substrate, and a substrate conveying device disposed in the conveying chamber. The conveying chamber is The installation object is disposed below the conveying range of the substrate through the conveyance part, and the gas suction port is disposed at a position that does not overlap with any of the base part and the installation object when viewed from the vertical direction. Can. [Effects of the invention]

當經由本發明之EFEM時,成為可遍佈全體均勻供給非活性氣體於上部空間,而在上部空間之複數的送風器之吸入側的壓力不均變小。隨之,對於自各送風器至搬送室的非活性氣體之供給量,不易產生不均。其結果,在搬送室內,成為容易垂直地流動非活性氣體,而不易揚起塵埃。When the EFEM of the present invention is used, the inert gas can be uniformly supplied to the upper space throughout the entire space, and the pressure unevenness on the suction side of the plurality of air blowers in the upper space becomes smaller. Accordingly, unevenness in the supply amount of the inert gas from each air blower to the transfer chamber is less likely to occur. As a result, the inert gas easily flows vertically in the transfer chamber and becomes less likely to raise dust.

以下,對於有關本發明之一實施形態的EFEM1,參照圖1~圖8同時,於以下加以說明。然而,說明的方便上,將圖1所示之方向作為前後左右方向。即,在本實施形態中,將排列有EFEM(Equipment Front End Module)1與基板處理裝置6之方向作為前後方向,而將EFEM1側作為前方,將基板處理裝置6側作為後方。另外,將與前後方向正交,排列複數之裝載埠4之方向作為左右方向。另外,與前後方向及左右方向的雙方正交之方向作為上下方向。Hereinafter, an EFEM 1 according to an embodiment of the present invention will be described below with reference to FIGS. 1 to 8 . However, for the convenience of explanation, the direction shown in Figure 1 is regarded as the front, rear, left and right directions. That is, in this embodiment, the direction in which the EFEM (Equipment Front End Module) 1 and the substrate processing apparatus 6 are arranged is regarded as the front-rear direction, the EFEM 1 side is regarded as the front, and the substrate processing apparatus 6 side is regarded as the rear. In addition, the direction orthogonal to the front-rear direction and in which a plurality of loading ports 4 are arranged is defined as the left-right direction. In addition, the direction orthogonal to both the front-rear direction and the left-right direction is defined as the up-down direction.

(EFEM及周邊的概略構成) 首先,對於EFEM1及其周邊的概略構成,使用圖1及圖2而加以說明。圖1係顯示有關本實施形態之EFEM1及其周邊的概略構成之平面圖。圖2係顯示EFEM1之電性構成的圖。如圖1所示,EFEM1係包括:框體2,和搬送機器手臂3(基板搬送裝置),和3個裝載埠4,和控制裝置5。對於EFEM1之後方係配置有對於晶圓W(基板)施以特定處裡之基板處理裝置6。EFEM1係經由配置於框體2內之搬送機器手臂3,在載置於裝載埠4之FOUP(Front-Opening Unified Pod)100與基板處理裝置6之間,進行晶圓W的授受。FOUP100係排列複數之晶圓W於上下方向而可收容之容器,而設置有開閉可能的蓋101於後端部(在前後方向之框體2側的端部)。FOUP100係例如,經由公知的OHT(天頂行走式無人搬送車:未圖示)而進行搬送。在OHT與裝載埠4之間,進行FOUP100之授受。 (Schematic structure of EFEM and surrounding areas) First, the schematic structure of EFEM1 and its surroundings will be described using FIGS. 1 and 2 . FIG. 1 is a plan view showing the schematic configuration of the EFEM 1 and its surroundings according to this embodiment. Figure 2 is a diagram showing the electrical structure of EFEM1. As shown in FIG. 1 , the EFEM1 system includes a frame 2 , a transfer robot arm 3 (substrate transfer device), three loading ports 4 , and a control device 5 . Behind the EFEM 1 is a substrate processing device 6 that performs specific processing on the wafer W (substrate). The EFEM 1 transfers the wafer W between the FOUP (Front-Opening Unified Pod) 100 placed in the loading port 4 and the substrate processing apparatus 6 via the transfer robot arm 3 arranged in the housing 2 . The FOUP 100 is a container that can accommodate a plurality of wafers W arranged in the up-and-down direction, and is provided with an openable and closable lid 101 at the rear end (the end on the frame 2 side in the front-rear direction). The FOUP 100 is transported via a well-known OHT (overhead traveling unmanned transport vehicle: not shown), for example. Between OHT and load port 4, FOUP100 is exchanged.

框體2係為了連接3個裝載埠4與基板處理裝置6之構成。對於框體2之內部係形成有對於外部空間而言作為略密閉,為了將晶圓W未暴露於外氣而進行搬送的搬送室41。當EFEM1稼動時,搬送室41係以氮而加以填充。然而,在本實施形態中,搬送室41係以氮加以填充,但如為非活性氣體,亦可維持氮以外的構成(例如,氬等)。框體2係在呈氮循環在包含搬送室41之內部空間地加以構成(對於詳細係後述之)。另外,對於框體2之後端部係安裝有開閉可能的門2a,而搬送室41係隔著門2a而與基板處理裝置6連接。The frame 2 is configured to connect the three loading ports 4 and the substrate processing apparatus 6 . A transfer chamber 41 is formed inside the frame 2 so as to be slightly sealed from the outside space so as to transport the wafer W without being exposed to outside air. When EFEM1 is activated, the transfer chamber 41 is filled with nitrogen. However, in this embodiment, the transfer chamber 41 is filled with nitrogen, but if it is an inert gas, it may maintain a composition other than nitrogen (for example, argon, etc.). The frame 2 is configured to circulate nitrogen in an internal space including the transfer chamber 41 (details will be described later). In addition, an openable and closable door 2 a is attached to the rear end of the frame 2 , and the transfer chamber 41 is connected to the substrate processing apparatus 6 via the door 2 a.

搬送機器手臂3係配置於搬送室41內,進行晶圓W的搬送。搬送機器手臂3係具有:固定位置之基台部90(參照圖3),和配置於基台部90之上方,保持晶圓W而進行搬送的手臂機構70(搬送部,參照圖3),和機器手臂控制部11(參照圖2)。搬送機器手臂3係主要進行取出FOUP100內之晶圓W而交付至基板處理裝置6之動作,或接受經由基板處理裝置6所處理之晶圓W而返回至FOUP100之動作。The transfer robot arm 3 is disposed in the transfer chamber 41 and transfers the wafer W. The transfer robot arm 3 has a fixed-position base portion 90 (see FIG. 3 ), and an arm mechanism 70 (transfer portion, see FIG. 3 ) disposed above the base portion 90 to hold and transfer the wafer W. and the robot arm control unit 11 (see Figure 2). The transfer robot arm 3 mainly performs the operation of taking out the wafer W in the FOUP 100 and delivering it to the substrate processing apparatus 6 , or receiving the wafer W processed by the substrate processing apparatus 6 and returning it to the FOUP 100 .

裝載埠4係為了載置FOUP100(參照圖7)之構成。複數之裝載埠4係如圖1及圖5所示,沿著框體2之前側的隔壁33,排列配置於左右方向。各裝載埠4係各閉鎖在位於後端的空間51(參照圖7),形成於框體2之隔壁33的3個開口33a1(參照圖4)。經由此,於框體2內,搬送室41則構成為略密閉空間。另外,裝載埠4係可置換FOUP100內之環境氣為氮。對於裝載埠4之後端部係設置有後述之開閉機構54之一部分的門4a。門4a係經由門驅動機構55(開閉機構54之一部分)而加以開閉。門4a係可解除FOUP100的蓋101的鎖,且可保持蓋101地加以構成。在門4a保持解除鎖的蓋101之狀態,由門驅動機構55則開啟門4a者,開啟蓋101。經由此,FOUP100內之晶圓W則成為可經由搬送機器手臂3而取出。另外,成為可經由搬送機器手臂3而將晶圓W收納於FOUP100內。The load port 4 is configured to load the FOUP 100 (see FIG. 7 ). As shown in FIGS. 1 and 5 , the plurality of loading ports 4 are arranged in the left and right directions along the partition wall 33 on the front side of the frame 2 . Each loading port 4 is closed in the space 51 at the rear end (see FIG. 7 ), and has three openings 33a1 formed in the partition wall 33 of the frame 2 (see FIG. 4 ). As a result, the transfer chamber 41 is configured as a substantially closed space within the housing 2 . In addition, loading port 4 can replace the ambient air in FOUP100 with nitrogen. The rear end of the loading port 4 is provided with a door 4a which is a part of an opening and closing mechanism 54 to be described later. The door 4a is opened and closed via the door driving mechanism 55 (part of the opening and closing mechanism 54). The door 4a is configured to unlock the cover 101 of the FOUP 100 and hold the cover 101. When the door 4a is opened with the lid 101 unlocked and the door 4a is opened by the door driving mechanism 55, the lid 101 is opened. Through this, the wafer W in the FOUP 100 can be taken out via the transfer robot arm 3 . In addition, the wafer W can be stored in the FOUP 100 via the transfer robot arm 3 .

如圖2所示,控制裝置5係與搬送機器手臂3之機器手臂控制部11,裝載埠4之裝載埠控制部12,基板處理裝置6之控制部(未圖示)加以電性連接,而進行與此等之控制部的通信。另外,控制裝置5係與設置於框體2內之氧濃度計85,壓力計86,濕度計87等加以電性連接,將此等之計測機器的計測結果進行收訊,把握有關框體2內之環境氣的資訊。另外,控制裝置5係與供給閥112及排出閥113(後述)加以電性連接,而由調節此等閥的開度者,適宜調節框體2內之氮環境氣。As shown in Figure 2, the control device 5 is electrically connected to the robot arm control part 11 of the transport robot arm 3, the loading port control part 12 of the loading port 4, and the control part (not shown) of the substrate processing device 6, and Communicates with the control unit. In addition, the control device 5 is electrically connected to the oxygen concentration meter 85, the pressure gauge 86, the hygrometer 87, etc. installed in the frame 2, and receives the measurement results of these measuring devices to grasp the relevant information about the frame 2. Information about the internal environment. In addition, the control device 5 is electrically connected to a supply valve 112 and a discharge valve 113 (described later), and by adjusting the opening of these valves, the nitrogen ambient gas in the frame 2 can be appropriately adjusted.

如圖1所示,基板處理裝置6係例如,具有加載互鎖真空室6a,和處理室6b。加載互鎖真空室6a係隔著框體2的門2a而與搬送室41加以連接,為了暫時使晶圓W待機的室。處理室6b係隔著門6c而與加載互鎖真空室6a加以連接。在處理室6b中,經由未圖示之處理機構,對於晶圓W施以特定的處理。As shown in FIG. 1 , the substrate processing apparatus 6 has, for example, a load lock vacuum chamber 6 a and a processing chamber 6 b. The load lock vacuum chamber 6a is connected to the transfer chamber 41 via the door 2a of the housing 2, and is a chamber for temporarily waiting for the wafer W. The processing chamber 6b is connected to the load lock vacuum chamber 6a via the door 6c. In the processing chamber 6b, specific processing is performed on the wafer W via a processing mechanism (not shown).

(框體及其內部的構成) 接著,對於框體2及其內部的構成,使用圖3~圖6加以說明。圖3係自前方而視框體2時之正面圖。圖4係沿著圖3所示之IV-IV線的剖面圖。圖5係沿著圖3所示之V-V線的剖面圖。圖6係沿著圖3所示之VI-VI線的剖面圖。然而,在圖3及圖6中係省略隔壁的圖示。另外,在圖5中,省略搬送機器手臂3等之圖示,對於裝載埠4係以2點鎖鏈線而顯示。 (Frame and its internal composition) Next, the structure of the frame 2 and its interior will be described using FIGS. 3 to 6 . Figure 3 is a front view of the frame 2 when viewed from the front. FIG. 4 is a cross-sectional view along line IV-IV shown in FIG. 3 . FIG. 5 is a cross-sectional view along line V-V shown in FIG. 3 . FIG. 6 is a cross-sectional view along line VI-VI shown in FIG. 3 . However, illustration of the partition wall is omitted in FIGS. 3 and 6 . In addition, in FIG. 5 , the illustration of the transport robot arm 3 and the like is omitted, and the loading port 4 is shown as a two-point chain line.

框體2係作為全體,具有略長方體形狀。如圖3~圖5所示,框體2係具有:柱21~26,和連結管27,和隔壁31~36。於延伸於上下方向的柱21~26,安裝有隔壁31~36,而框體2之內部空間(搬送室41及FFU設置室42)則對於外部空間而言略密閉地加以構成。The frame 2 as a whole has a substantially rectangular parallelepiped shape. As shown in Figures 3 to 5, the frame 2 system has columns 21 to 26, a connecting pipe 27, and partition walls 31 to 36. The partition walls 31 to 36 are attached to the columns 21 to 26 extending in the vertical direction, and the internal space of the frame 2 (the transfer chamber 41 and the FFU installation chamber 42) is configured to be somewhat airtight from the outside space.

更具體而言,如圖4所示,在框體2之前端部中,柱21~24則自左方朝向右方相互隔離之同時依序加以配置。也就是,4支的柱21~24係沿著左右方向而加以排列。另外,柱21~24係如圖3所示,呈沿著上下方向地加以立設。柱21,24係由配置於下側的第1部分21b,24b,和配置於上側的第2部分21c,24c而加以構成。第1部分21b,24b係立設於隔壁31上,其上端則連接於連結管27。另外,柱22,23亦立設於隔壁31上,其上端則連接於連結管27。此等第1部分21b,24b及柱22,23係其上下方向的長度則成為略相同長度。第2部分21c,24c係在連結管27上,立設於沿著上下方向與第1部分21b,24b重疊之位置。對於框體2之後端部的左右兩側係2支的柱25,26則沿著上下方向加以立設配置。連結管27係延伸存在於左右方向(4支的柱21~24之排列方向),與4支的柱21~24相互加以連接。More specifically, as shown in FIG. 4 , in the front end of the frame 2 , the columns 21 to 24 are arranged in sequence while being isolated from each other from the left to the right. That is, the four pillars 21 to 24 are arranged along the left and right directions. In addition, the columns 21 to 24 are erected along the up-and-down direction as shown in FIG. 3 . The columns 21 and 24 are composed of first parts 21b and 24b arranged on the lower side and second parts 21c and 24c arranged on the upper side. The first parts 21b and 24b are erected on the partition wall 31, and their upper ends are connected to the connecting pipe 27. In addition, the columns 22 and 23 are also erected on the partition wall 31, and their upper ends are connected to the connecting pipe 27. The lengths of the first portions 21b, 24b and the columns 22, 23 in the up-down direction are approximately the same length. The second parts 21c and 24c are connected to the connecting pipe 27 and are erected at a position overlapping the first parts 21b and 24b in the vertical direction. Two columns 25 and 26 are arranged vertically on the left and right sides of the rear end of the frame 2 along the up and down direction. The connecting pipe 27 extends in the left-right direction (the direction in which the four columns 21 to 24 are arranged), and is connected to the four columns 21 to 24 with each other.

如圖3所示,於框體2之底部配置有隔壁31,而於天頂部配置有隔壁32。如圖4所示,各於前端部配置有隔壁33,而於後端部配置有隔壁34,於左端部配置有隔壁35,於右端部配置有隔壁36。對於隔壁33係形成有前述之3個開口33a1。此等3個開口33a1係在左右方向中,配置於4個柱21~24間,而經由裝載埠4之基底51而加以閉鎖。對於框體2之右端部係設置有配置有後述之定位器84的載置部83(參照圖3)。定位器84及載置部83亦收容於框體2之內側(參照圖4)。As shown in FIG. 3 , a partition wall 31 is arranged at the bottom of the frame 2 and a partition wall 32 is arranged at the top of the ceiling. As shown in FIG. 4 , a partition wall 33 is arranged at the front end, a partition wall 34 is arranged at the rear end, a partition wall 35 is arranged at the left end, and a partition wall 36 is arranged at the right end. The partition wall 33 is formed with the aforementioned three openings 33a1. These three openings 33a1 are arranged between the four columns 21 to 24 in the left-right direction, and are closed through the base 51 of the loading port 4. The right end portion of the frame 2 is provided with a placement portion 83 (see FIG. 3 ) in which a positioner 84 to be described later is arranged. The positioner 84 and the placing part 83 are also accommodated inside the frame 2 (see FIG. 4 ).

如圖5所示,在框體2內之上側部分,對於連結管27之後端側係配置有延伸於水平方向之支持板37(間隔構件)。經由此,框體2之內部係分為前述之搬送室41,和形成於搬送室41之上方之FFU設置室42。也就是,經由支持板37,在框體2之內部空間中,於搬送室41之上方,構成有作為上部空間的FFU設置室42。As shown in FIG. 5 , in the upper portion of the frame 2 , a support plate 37 (spacer member) extending in the horizontal direction is arranged on the rear end side of the connecting pipe 27 . Through this, the inside of the frame 2 is divided into the aforementioned transfer chamber 41 and the FFU installation room 42 formed above the transfer chamber 41 . That is, the FFU installation chamber 42 is formed as an upper space above the transfer chamber 41 in the internal space of the frame 2 via the support plate 37 .

對於FFU設置室42內係配置有後述之3個FFU(風扇過濾單元)44。在支持板37之前後方向的中央部,對向於與FFU44上下方向之位置,係形成有使搬送室41與FFU設置室42連通之3個連通口37a。此等3個連通口37a係如圖6所示,沿著左右方向加以排列配置。另外,3個連通口37a係在左右方向中,配置於4支的柱21~24間。然而,框體2之隔壁33~36係分為搬送室41用之下部壁與FFU設置室42用之上部壁(例如,參照在圖5之前端部的隔壁33a,33b及後端部之隔壁34a,34b)。各FFU44係在後述之搬送範圍200之氣流速度則呈成為期望的值而預先決定旋轉數。作為在搬送範圍200之氣流速度係不足1m/s,理想係0.1m/s~0.7m/s,而更理想係0.2m/s~0.6m/s,因應目標的值而決定各FFU之旋轉數。Three FFU (fan filter units) 44 to be described later are arranged in the FFU installation room 42. Three communication openings 37 a are formed in the center portion of the support plate 37 in the front-rear direction, facing the up-down direction of the FFU 44 , for connecting the transfer chamber 41 and the FFU installation chamber 42 . These three communication ports 37a are arranged in an array along the left-right direction as shown in FIG. 6 . In addition, three communication ports 37a are arranged in the left-right direction between the four pillars 21 to 24. However, the partition walls 33 to 36 of the frame 2 are divided into a lower wall for the transfer chamber 41 and an upper wall for the FFU installation chamber 42 (for example, refer to the partition walls 33a and 33b at the front end and the partition wall at the rear end in FIG. 5 34a, 34b). The number of revolutions of each FFU 44 is determined in advance so that the air flow velocity in the conveyance range 200 described below becomes a desired value. The airflow velocity in the conveyance range 200 is less than 1m/s, ideally 0.1m/s~0.7m/s, and more ideally 0.2m/s~0.6m/s. The rotation of each FFU is determined according to the target value. Count.

接著,對於框體2之內部的構成加以說明。具體而言,對於為了在框體2內使氮循環之構成及其周邊構成,以及配置於搬送室41內之機器等加以說明。Next, the internal structure of the housing 2 will be described. Specifically, the structure for circulating nitrogen in the housing 2 and its surrounding structure, as well as the equipment arranged in the transfer chamber 41 will be described.

對於為了在框體2內使氮循環之構成及其周邊構成,使用圖3~圖6加以說明。如圖5所示,對於框體2之內部係形成有為了使氮循環之循環路徑40。循環路徑40係經由搬送室41,和FFU設置室42,和返還路徑43(氣體返還路徑)而加以構成。在循環路徑40中,自FFU設置室42,將清淨的氮通過各連通口37a而送出於下方,到達至搬送室41之下端部之後,成為通過返還路徑43而上升,呈返回於FFU設置室42(參照圖5之箭頭)。以下,詳細說明。The structure for circulating nitrogen in the frame 2 and its peripheral structure will be explained using FIGS. 3 to 6 . As shown in FIG. 5 , a circulation path 40 for circulating nitrogen is formed inside the frame 2 . The circulation path 40 is configured through the transfer chamber 41, the FFU installation chamber 42, and the return path 43 (gas return path). In the circulation path 40, clean nitrogen is sent downward from the FFU installation chamber 42 through each communication port 37a. After reaching the lower end of the transfer chamber 41, it rises through the return path 43 and returns to the FFU installation chamber. 42 (refer to the arrow in Figure 5). Detailed description below.

對於FFU設置室42係如圖5及圖6所示,設置有配置於支持板37上之3個FFU44,和配置於FFU44上之3個化學過濾器45。各FFU44係如圖5所示,具有風扇44a(送風器)與過濾器44b,作為呈被覆連通口37a而加以配置於支持板37上。FFU44係如由圖6中箭頭所示,經由風扇44a而將FFU設置室42內的氮,自FFU44之周圍吸入送出於下方之同時,經由過濾器44b而除去含於氮之灰塵(未圖示)。化學過濾器45係例如,為了除去自基板處理裝置6帶入於循環路徑40內之活性氣體等之構成。經由FFU44及化學過濾器45所清淨化的氮係自FFU設置室42,藉由形成於支持板37之連通口37a而送出於搬送室41。送出於搬送室41的氮係形成層流,流動於下方。As shown in FIGS. 5 and 6 , the FFU installation chamber 42 is provided with three FFU 44 arranged on the support plate 37 and three chemical filters 45 arranged on the FFU 44 . As shown in FIG. 5 , each FFU 44 has a fan 44a (air blower) and a filter 44b, and is arranged on the support plate 37 to form a covered communication port 37a. As shown by the arrow in FIG. 6 , the FFU 44 sucks the nitrogen in the FFU installation chamber 42 from around the FFU 44 through the fan 44 a and sends it out to the bottom, and at the same time removes dust containing nitrogen through the filter 44 b (not shown in the figure). ). The chemical filter 45 is configured, for example, to remove active gas and the like introduced into the circulation path 40 from the substrate processing apparatus 6 . The nitrogen purified by the FFU 44 and the chemical filter 45 is sent from the FFU installation chamber 42 to the transfer chamber 41 through the communication port 37 a formed in the support plate 37 . The nitrogen sent out of the transfer chamber 41 forms a laminar flow and flows downward.

返還路徑43係形成於配置於框體2之前端部的柱21~24(在圖5中係柱23)及連結管27。柱21,24之第1部分21b,24b、柱22,23、及連結管27之內部係成為中空,而各形成有相互可流通氮的空間21a~24a,27a(參照圖4)。柱21,24之第1部分21b,24b係如圖4所示,左右方向的寬度則成為較柱22,23為大。也就是,空間21a,24a(第1流路)之平面尺寸(即、第1部分21b,24b之開口面積)則成為較空間22a,23a(柱22,23之開口面積)為大。另外,空間21a~24a(第1流路)係延伸存在於上下方向而加以形成,均自柱21~24的下端延伸存在至連結管27之位置。The return path 43 is formed in the columns 21 to 24 (the bollard 23 in FIG. 5 ) and the connecting pipe 27 arranged at the front end of the frame 2 . The interiors of the first portions 21b and 24b of the columns 21 and 24, the columns 22 and 23, and the connecting tube 27 are hollow, and spaces 21a to 24a and 27a through which nitrogen can flow to each other are formed (see Fig. 4). The first portions 21b and 24b of the columns 21 and 24 are as shown in Fig. 4, and their left and right widths are larger than those of the columns 22 and 23. That is, the planar dimensions of the spaces 21a and 24a (the first flow path) (that is, the opening areas of the first portions 21b and 24b) are larger than those of the spaces 22a and 23a (the opening areas of the columns 22 and 23). In addition, the spaces 21a to 24a (first flow paths) are formed to extend in the up and down direction, and extend from the lower ends of the columns 21 to 24 to the position of the connecting pipe 27 .

連結管27係加以配置於框體2之前端部。連結管27之空間27a(第2流路)係延伸存在於左右方向。另外,對於連結管27之下面係如圖5及圖6所示,形成有為了使空間21a~24a與空間27a相互連通之連通口27b~27e。另外,對於連結管27之上面係如圖6所示,形成有朝向FFU設置室42(即,朝向上方)開口之3個送出口27f~27h。此等3個送出口27f~27h係在左右方向中,配置於4支柱21~24間,而相互於左右方向具有長尺之矩形平面形狀。另外,3個送出口27f~27h係配置於框體2之前端部。如此,連結管27係使自4個空間21a~24a流入的氮一旦合流之後,可自3個送出口27f~27h送出至FFU設置室42地加以構成。氮在自空間21a~24a流動於空間27a時,其氣流的方向則自上方變更為左右方向,且自空間27a,藉由送出口27f~27h而流入至FFU設置室42時,其氣流的方向則自左右方向而變更為上方。經由如此之空間21a~24a,27a而構成返還路徑43。另外,3個送出口27f~27h係配置於與FFU44沿著前後方向而重疊之位置。也就是,各對應連接於前後方向之送出口27f~27h與FFU44。並且,3個送出口27f~27h係長尺地形成於左右方向,具有比較大的開口面積。因此,自各送出口27f~27h送出至FFU設置室42之氣體的流動則變為緩和,而3個FFU44之吸入側(上方側)之壓力不均則變小。然而,自送出口27f~27h送出至FFU設置室42之氣體係如圖5所示,通過隔壁33與FFU44之間而流動於上方。The connecting pipe 27 is arranged at the front end of the frame 2 . The space 27a (second flow path) of the connecting pipe 27 extends in the left-right direction. In addition, as shown in FIGS. 5 and 6 , the lower surface of the connecting pipe 27 is formed with communication ports 27b to 27e for communicating the spaces 21a to 24a and the space 27a with each other. In addition, as shown in FIG. 6 , three delivery ports 27f to 27h opening toward the FFU installation chamber 42 (that is, upward) are formed on the upper surface of the connecting pipe 27 . These three delivery ports 27f to 27h are arranged between the four pillars 21 to 24 in the left and right direction, and have a long rectangular plan shape in the left and right direction. In addition, three delivery ports 27f to 27h are arranged at the front end of the frame 2. In this way, the connecting pipe 27 is configured so that the nitrogen flowing in from the four spaces 21a to 24a can be once combined and then sent out to the FFU installation chamber 42 from the three delivery ports 27f to 27h. When nitrogen flows from the spaces 21a to 24a to the space 27a, the direction of the air flow changes from above to the left and right directions. When nitrogen flows from the space 27a through the delivery ports 27f to 27h into the FFU installation chamber 42, the direction of the air flow changes. Then it changes from the left and right direction to the top. The return path 43 is formed through such spaces 21a to 24a and 27a. In addition, the three delivery ports 27f to 27h are arranged in positions overlapping the FFU 44 in the front-rear direction. That is, they are respectively connected to the delivery ports 27f to 27h and the FFU 44 in the front and rear directions. Furthermore, the three delivery ports 27f to 27h are formed elongated in the left-right direction and have a relatively large opening area. Therefore, the flow of the gas sent to the FFU installation chamber 42 from the respective delivery ports 27f to 27h becomes gentle, and the pressure unevenness on the suction side (upper side) of the three FFUs 44 becomes smaller. However, as shown in FIG. 5 , the gas system sent out from the sending outlets 27f to 27h to the FFU installation chamber 42 passes between the partition wall 33 and the FFU 44 and flows upward.

對於返還路徑43,參照圖5之同時更具體地加以說明。然而,對於圖5係顯示柱23,但對於其他的柱21,24之第1部分21b,24b及柱22亦為相同。對於柱23之下端部,係安裝有為了容易使搬送室41內的氮流入至返還路徑43(空間23a)之導入導管28。導入導管28係亦同樣地安裝於其他的柱21,22,24。然而,柱21,24係較柱23寬度寬地形成於左右方向之故,在所安裝之導入導管28中,亦寬度寬地加以形成,但除此以外係為同樣的構成。對於導入導管28係形成有開口28a,到達至搬送室41之下端部的氮則成為可流入至返還路徑43。也就是,開口28a係將搬送室41內的氮吸引至返還路徑43之氣體吸引口。另外,開口28a係朝向下方而加以構成。因此,成為可將自上方到達至隔壁31的氣體,未混亂來自上方之氣體的流動而平順地吸入者。更且,成為可將由開口28a吸入的氣體,對於上方未改變氣流方向而流動者。The return path 43 will be described in more detail with reference to FIG. 5 . However, FIG. 5 shows column 23, but the same applies to the first portions 21b, 24b and column 22 of other columns 21, 24. An introduction pipe 28 is installed at the lower end of the column 23 to facilitate the flow of nitrogen in the transfer chamber 41 into the return path 43 (space 23a). The introduction duct 28 is similarly installed on the other columns 21, 22, and 24. However, since the columns 21 and 24 are formed wider than the column 23 in the left-right direction, the installed introduction duct 28 is also formed wider, but other than that, they have the same structure. The introduction duct 28 is formed with an opening 28 a so that nitrogen reaching the lower end of the transfer chamber 41 can flow into the return path 43 . That is, the opening 28 a is a gas suction port that sucks nitrogen in the transfer chamber 41 to the return path 43 . In addition, the opening 28a is configured to face downward. Therefore, the gas reaching the partition wall 31 from above can be smoothly inhaled without disrupting the flow of the gas from above. Furthermore, the gas that can be sucked in through the opening 28a flows upward without changing the direction of the gas flow.

對於導入導管28之上部,係形成有越朝向下方越擴散於後方之擴大部28b。在導入導管28內,對於擴大部28b的下方係配置有風扇46。風扇46係經由未圖示之馬達而加以驅動,將到達至搬送室41之下端部的氮,吸入於返還路徑43(在圖5中係空間23a)而送出至上方,將氮返回至FFU設置室42。返回至FFU設置室42的氮係自化學過濾器45之上面吸入至FFU44側,經由此等FFU44或化學過濾器45而加以清淨化,再次藉由連通口37a而送出至搬送室41。由以上作為,氮則成為可循環在循環路徑40內。The upper portion of the introduction duct 28 is formed with an enlarged portion 28 b that spreads toward the rear as it goes downward. In the introduction duct 28, a fan 46 is arranged below the enlarged portion 28b. The fan 46 is driven by a motor (not shown), sucks the nitrogen that reaches the lower end of the transfer chamber 41 into the return path 43 (space 23a in FIG. 5 ), sends it upward, and returns the nitrogen to the FFU installation. Room 42. The nitrogen returned to the FFU installation chamber 42 is sucked from the upper surface of the chemical filter 45 to the FFU 44 side, is cleaned through the FFU 44 or the chemical filter 45, and is sent out to the transfer chamber 41 through the communication port 37a again. As a result, nitrogen can be circulated in the circulation path 40 .

另外,如圖3所示,對於FFU設置室42之後端上部(即,框體2之後端部),係配置有為了供給氮於FFU設置室42(循環路徑40)內之供給管47。供給管47係與連接於氮的供給源111之外部配管48加以連接。對於外部配管48之途中部位,係設置有可變更氮的每單位時間之供給量的供給閥112。經由此等供給管47,外部配管48,供給閥112及供給源111而加以構成非活性氣體供給手段。然而,非活性氣體供給線則設置於工場等之情況,係如連接該供給線與供給管47即可。因此,非活性氣體供給手段係僅自供給管47而加以構成亦可。In addition, as shown in FIG. 3 , a supply pipe 47 for supplying nitrogen into the FFU installation chamber 42 (circulation path 40 ) is arranged at the upper rear end of the FFU installation chamber 42 (that is, the rear end of the frame 2 ). The supply pipe 47 is connected to an external pipe 48 connected to the nitrogen supply source 111 . A supply valve 112 capable of changing the supply amount of nitrogen per unit time is provided in the middle of the external pipe 48 . The inert gas supply means is configured through the supply pipe 47, the external pipe 48, the supply valve 112 and the supply source 111. However, when the inert gas supply line is installed in a factory or the like, the supply line and the supply pipe 47 may be connected. Therefore, the inert gas supply means may be configured from the supply pipe 47 only.

供給管47係如圖3及圖6所示,沿著左右方向而延伸存在,而形成有3個供給口47a。3個供給口47a係沿著左右方向而相互隔離加以配置,而自供給管47供給氮於FFU設置室42內。此等3個供給口47a係如圖5及圖6所示,形成於供給管47之下端,而呈與支持板37之供給管47朝向對向於上下方向的範圍37b(即,至支持板37之供給口47a的距離為最近的範圍),加以供給氮地加以構成。另外,3個供給口47a係在左右方向,配置於與FFU44之中心相同之位置關係。經由此,3個供給口47a係在前後方向中,配置於在送出口27f~27h之間夾持風扇44a之位置。As shown in FIGS. 3 and 6 , the supply pipe 47 extends in the left-right direction and has three supply ports 47 a formed therein. The three supply ports 47a are spaced apart from each other in the left-right direction, and nitrogen is supplied from the supply pipe 47 into the FFU installation chamber 42. As shown in FIGS. 5 and 6 , these three supply ports 47 a are formed at the lower end of the supply pipe 47 , and form a range 37 b opposite to the supply pipe 47 of the support plate 37 in the up and down direction (that is, to the support plate 37 ). The distance between the supply port 47a of 37 is the shortest range) and is configured to supply nitrogen. In addition, the three supply ports 47a are arranged in the left and right direction in the same positional relationship as the center of the FFU 44. Through this, the three supply ports 47a are arranged in the front-rear direction at a position sandwiching the fan 44a between the delivery ports 27f to 27h.

當自如此之供給管47之3個供給口47a供給氮於FFU設置室42時,3個供給口47a則在FFU設置室42內加以分散配置之故,氮則平均供給至FFU設置室42全體。例如,自連接於框體2之右端部的外部配管48之1個供給口,直接供給氮於FFU設置室42內之情況,FFU設置室42之右方部分的壓力則上升。即,配置於最右方之FFU44之吸入側的壓力則成為較其他2個FFU44為大。如此,當於FFU44之吸入側的壓力產生大的不均時,對於自3個FFU44至搬送室41之氮的供給量容易產生不均。但在本實施形態中,係自相互隔離而配置於左右方向之3個供給口47a供給氮之故,3個FFU44之吸入側的壓力不均則變小。隨之,自3個FFU44至搬送室41之氮的供給量則安定,送出至搬送室41的氮則形成層流,流動至下方。When nitrogen is supplied to the FFU installation chamber 42 from the three supply ports 47a of the supply pipe 47, since the three supply ports 47a are dispersedly arranged in the FFU installation chamber 42, nitrogen is evenly supplied to the entire FFU installation chamber 42. . For example, when nitrogen is directly supplied into the FFU installation chamber 42 from a supply port of the external pipe 48 connected to the right end of the frame 2, the pressure in the right portion of the FFU installation chamber 42 increases. That is, the pressure on the suction side of the rightmost FFU 44 is larger than that of the other two FFU 44 . In this way, when large unevenness occurs in the pressure on the suction side of the FFU 44 , unevenness is likely to occur in the supply amount of nitrogen from the three FFU 44 to the transfer chamber 41 . However, in this embodiment, since nitrogen is supplied from three supply ports 47a that are isolated from each other and arranged in the left and right directions, the pressure unevenness on the suction sides of the three FFUs 44 becomes smaller. Accordingly, the supply amount of nitrogen from the three FFUs 44 to the transfer chamber 41 becomes stable, and the nitrogen sent to the transfer chamber 41 forms a laminar flow and flows downward.

另外,如圖5所示,對於裝載埠4之下端係連接有為了排出循環路徑40內的氣體的排出管49。然而,裝載埠4係如後述,收容有門驅動機構55之收容室60則藉由形成於基底51之縫隙51b而連通著(參照圖7)。並且,排出管49則連接於收容室60。排出管49係例如,連結於未圖示之排氣埠,而對於其途中部位係設置有可變更循環路徑40內之氣體的每單位時間之排出量的排出閥113。經由此等排出管49及排出閥113而加以構成氣體排出手段。In addition, as shown in FIG. 5 , a discharge pipe 49 for discharging gas in the circulation path 40 is connected to the lower end of the loading port 4 . However, as will be described later, the loading port 4 is connected to the storage chamber 60 in which the door driving mechanism 55 is stored through the slit 51 b formed in the base 51 (see FIG. 7 ). Furthermore, the discharge pipe 49 is connected to the storage chamber 60 . The discharge pipe 49 is connected to an exhaust port (not shown), for example, and is provided with a discharge valve 113 at an intermediate position thereof that can change the discharge amount of gas in the circulation path 40 per unit time. Gas discharging means is formed through the discharge pipe 49 and the discharge valve 113 .

供給閥112及排出閥113係與控制裝置5電性連接(參照圖2)。經由此,成為可適宜供給及排出氮於循環路徑40之情況。例如,始動EFEM1時(例如,包含維護EFEM1之後開始始動時等),循環路徑40內之氧濃度上升之情況,自供給源111,藉由外部配管48及供給管47而將氮供給至循環路徑40,由藉由排出管49而排出循環路徑40及收容室60內之氣體(氣體:包含氮及氧等)者,可降低氧濃度。也就是,可將循環路徑40及收容室60內置換為氮環境氣者。然而,當使EFEM1稼動時,循環路徑40內的氧濃度上升之情況,亦由一時性地多供給氮於循環路徑40,藉由排出管49而與氮同時排出氧者,可降低氧濃度。例如,在使氮循環之形式的EFEM1中,係抑制自循環路徑40至外部之氮的漏出同時,為了確實地抑制自外部至循環路徑40之大氣的侵入,必須將循環路徑40內的壓力,較外部的壓力為稍微高地進行保持。具體而言係1Pa(G)~3000Pa(G)之範圍內,而理想為3Pa(G)~500Pa(G)、更理想為5Pa(G)~ 100Pa(G)。因此,控制裝置5係當循環路徑40內之壓力則自特定的範圍脫離時,由變更排出閥113的開度者而變更氮的排出流量,壓力則呈成為特定之目標壓力地進行調節。如此,依據氧濃度而調節氮的供給流量,再由依據壓力而調節氮的排出流量者,加以抑制氧濃度及壓力。在本實施形態中,呈成為10Pa(G)之差壓進行調整。The supply valve 112 and the discharge valve 113 are electrically connected to the control device 5 (see FIG. 2 ). Through this, nitrogen can be supplied and discharged appropriately to the circulation path 40 . For example, when EFEM1 is started (for example, including starting after maintenance of EFEM1, etc.), the oxygen concentration in the circulation path 40 increases. Nitrogen is supplied to the circulation path from the supply source 111 through the external pipe 48 and the supply pipe 47. 40. By discharging the gas (gas: including nitrogen, oxygen, etc.) in the circulation path 40 and the storage chamber 60 through the discharge pipe 49, the oxygen concentration can be reduced. That is, the circulation path 40 and the storage chamber 60 can be replaced with nitrogen ambient gas. However, when EFEM1 is activated and the oxygen concentration in the circulation path 40 increases, the oxygen concentration can be reduced by temporarily supplying more nitrogen to the circulation path 40 and discharging oxygen together with the nitrogen through the discharge pipe 49 . For example, in the EFEM 1 that circulates nitrogen, the leakage of nitrogen from the circulation path 40 to the outside is suppressed. In order to reliably suppress the intrusion of the atmosphere from the outside into the circulation path 40, the pressure within the circulation path 40 must be reduced. The external pressure is maintained slightly higher. Specifically, it is in the range of 1Pa(G)~3000Pa(G), and ideally it is 3Pa(G)~500Pa(G), and more preferably 5Pa(G)~100Pa(G). Therefore, when the pressure in the circulation path 40 deviates from a specific range, the control device 5 adjusts the nitrogen discharge flow rate by changing the opening of the discharge valve 113 so that the pressure reaches a specific target pressure. In this way, the nitrogen supply flow rate is adjusted based on the oxygen concentration, and the nitrogen discharge flow rate is adjusted based on the pressure, thereby suppressing the oxygen concentration and pressure. In this embodiment, the pressure difference is adjusted to 10 Pa (G).

接著,對於配置於搬送室41內的機器等,使用圖3及圖4而加以說明。如圖3及圖4所示,對於搬送室41內係配置有上述之搬送機器手臂3,和控制部收容箱81,和計測機器收容箱82,和定位器84。控制部收容箱81係例如,設置於搬送機器手臂3之基台部90(參照圖3)的左方,設置於較經由手臂機構70(參照圖3)而搬送晶圓W之搬送範圍200為下方。對於控制部收容箱81係收容有上述之機器手臂控制部11或裝載埠控制部12。計測機器收容箱82係例如,配置於基台部90之右方,配置於較手臂機構70之搬送範圍200為下方。對於計測機器收容箱82係成為可收容有上述之氧濃度計85,壓力計86,濕度計87等之計測機器(參照圖2)。控制部收容箱81及計測機器收容箱82則相當於本發明之設置物。上述之導入導管28(參照圖4)係配置於基台部90,控制部收容箱81,及計測機器收容箱82之前方。也就是,開口28a係自上下方向(垂直方向)而視時,配置於基台部90,控制部收容箱81,及計測機器收容箱82之任一均未重疊之位置(參照圖4,圖5)。Next, the equipment and the like arranged in the transfer chamber 41 will be described using FIGS. 3 and 4 . As shown in FIGS. 3 and 4 , the above-mentioned transfer robot arm 3 , a control unit storage box 81 , a measurement device storage box 82 , and a positioner 84 are arranged in the transfer chamber 41 . The control unit storage box 81 is, for example, provided on the left side of the base portion 90 of the transport robot arm 3 (see FIG. 3 ), and is located farther than the transport range 200 in which the wafer W is transported via the arm mechanism 70 (see FIG. 3 ). below. The control unit storage box 81 stores the above-described robot arm control unit 11 or loading port control unit 12. The measuring device storage box 82 is, for example, disposed on the right side of the base portion 90 and below the transport range 200 of the arm mechanism 70 . The measuring device storage box 82 is configured to accommodate the above-mentioned measuring devices such as the oxygen concentration meter 85, the pressure meter 86, the hygrometer 87, etc. (see FIG. 2). The control unit storage box 81 and the measurement device storage box 82 correspond to the installations of the present invention. The above-mentioned introduction duct 28 (see FIG. 4 ) is arranged in front of the base portion 90 , the control unit storage box 81 , and the measurement device storage box 82 . That is, the opening 28a is disposed at a position where none of the base portion 90, the control unit storage box 81, and the measurement device storage box 82 overlap when viewed from the up and down direction (vertical direction) (see FIG. 4, FIG. 5).

定位器84係為了檢出保持於搬送機器手臂3之手臂機構70(參照圖3)之晶圓W的保持位置,自目標保持位置偏移多少之構成。例如,在經由上述之OHT(未圖示)所搬送之FOUP100(參照圖1)之內部中,晶圓W則有微妙移動之虞。因此,搬送機器手臂3係將自FOUP100取出之處理前的晶圓W,暫時載置於定位器84。定位器84係計測晶圓W經由搬送機器手臂3而保持在自目標保持位置偏移多少之位置,將計測結果送訊至機器手臂控制部11。機器手臂控制部11係依據上述計測結果,補正經由手臂機構70之保持位置,控制手臂機構70而使晶圓W保持在目標保持位置,搬送至基板處理裝置6之加載互鎖真空室6a。經由此,可正常地進行經由基板處理裝置6之晶圓W的處理。The positioner 84 is configured to detect how much the wafer W is held by the arm mechanism 70 (see FIG. 3 ) of the transfer robot arm 3 and is shifted from the target holding position. For example, within the FOUP 100 (see FIG. 1 ) transported via the above-mentioned OHT (not shown), the wafer W may move slightly. Therefore, the transfer robot 3 temporarily places the unprocessed wafer W taken out from the FOUP 100 on the positioner 84 . The positioner 84 measures how far the wafer W is held by the transfer robot 3 from the target holding position, and sends the measurement result to the robot control unit 11 . The robot arm control unit 11 corrects the holding position via the arm mechanism 70 based on the above measurement results, controls the arm mechanism 70 to hold the wafer W at the target holding position, and transports the wafer W to the load lock vacuum chamber 6 a of the substrate processing apparatus 6 . Thereby, the wafer W can be processed normally by the substrate processing apparatus 6 .

(裝載埠之構成) 接著,對於裝載埠之構成,參照圖7及圖8之同時,於以下加以說明。圖7係顯示關閉門之狀態的裝載埠之側剖面圖。圖8係顯示開啟門之狀態的裝載埠之側剖面圖。然而,圖7及圖8係在拆除位置於載置台53之下方的外部蓋體4b(參照圖5)之狀態所描繪。 (Construction of loading port) Next, the structure of the loading port will be described below with reference to FIGS. 7 and 8 . Figure 7 is a side cross-sectional view of the loading port showing the state of the door being closed. Figure 8 is a side cross-sectional view of the loading port showing the state of the door being opened. However, FIGS. 7 and 8 illustrate a state in which the outer cover 4b (see FIG. 5 ) is removed and located below the mounting table 53 .

如圖7所示,裝載埠4係具有:沿著上下方向而立設之板狀的基底51,和自此基底51之上下方向的中央部分朝向前方而突出加以形成之水平基部52。對於水平基部52之上部係設置有為了載置FOUP100之載置台53。載置台53係在載置FOUP100之狀態,成為可經由載置台驅動部(未圖示)而移動於前後方向者。As shown in FIG. 7 , the loading port 4 has a plate-shaped base 51 standing upright in the up-down direction, and a horizontal base 52 formed to protrude forward from the center portion of the base 51 in the up-down direction. A mounting base 53 for mounting the FOUP 100 is provided above the horizontal base 52 . The mounting base 53 is in a state where the FOUP 100 is mounted, and is movable in the front-rear direction via a mounting base driving unit (not shown).

基底51係構成自外部空間隔離搬送室41的隔壁33之一部分。基底51係自前方而視,具有於上下方向長尺之略矩形平面形狀。另外,基底51係於與所載置之FOUP100可對向於前後方向的位置,形成有窗部51a。另外,基底51係在上下方向中,於較水平基部52為下方位置,形成有延伸存在於後述之支持框體56可移動之上下方向的縫隙51b。縫隙51b係支持框體56則在貫通基底51之狀態,僅形成於可移動於上下之範圍,而左右方向的開口寬度則變小。因此,收容室60之灰塵則不易自縫隙51b侵入至搬送室41。The base 51 forms part of the partition wall 33 that isolates the transfer chamber 41 from the outside space. The base 51 has a substantially rectangular planar shape that is long in the up and down direction when viewed from the front. In addition, the base 51 is formed with a window portion 51 a at a position facing the FOUP 100 placed therein in the front-rear direction. In addition, the base 51 is formed in a position lower than the horizontal base 52 in the up-down direction, and is formed with a slit 51 b extending in the up-down direction in which the support frame 56 described later can move. The slit 51b is formed in a state where the support frame 56 penetrates the base 51 and is only movable up and down, and the opening width in the left and right directions becomes smaller. Therefore, dust in the storage chamber 60 is less likely to invade into the transfer chamber 41 through the gap 51b.

裝載埠4係具有可開閉FOUP100的蓋101之開閉機構54。開閉機構54係具有:可閉鎖窗部51a的門4a,和為了使門4a驅動的門驅動機構55。門4a係可閉鎖窗部51a地加以構成。另外,門4a係可解除FOUP100的蓋101的鎖,且可保持蓋101地加以構成。門驅動機構55係包含:為了支持門4a之支持框體56,和藉由滑件支持手段57而將支持框體56可移動於前後方向之可動部件58,和將此可動部件58,對於基底51而言可移動於上下方向地支持之滑軌59。The loading port 4 has an opening and closing mechanism 54 capable of opening and closing the cover 101 of the FOUP 100 . The opening and closing mechanism 54 includes a door 4a capable of closing the window portion 51a, and a door driving mechanism 55 for driving the door 4a. The door 4a is configured so that the window portion 51a can be closed. In addition, the door 4a is configured to unlock the cover 101 of the FOUP 100 and hold the cover 101. The door driving mechanism 55 includes a support frame 56 for supporting the door 4a, a movable member 58 that moves the support frame 56 in the front-rear direction by the slide support means 57, and this movable member 58 with respect to the base. 51 is a slide rail 59 that is supported movable in the up and down direction.

支持框體56係支持門4a之後部下方的構成,而在朝向下方而延伸存在之後,通過設置於基底51之縫隙51b而朝向基底51之前方突出之略彎曲狀的板狀構件。並且,為了支持此支持框體56之滑件支持手段57,可動部件58及滑軌59係設置於基底51之前方。即,為了使門4a移動之驅動處則在框體2之外側,收容於設置於水平基部52之下方的收容室60。收容室60係由水平基部52,和自水平基部52朝向下方而延伸存在之略箱狀的蓋體61與基底51而加以圍繞所構成,作為略密閉狀態。The support frame 56 is a slightly curved plate-like member that supports the lower portion of the rear portion of the door 4 a and extends downward, and then protrudes toward the front of the base 51 through the slit 51 b provided in the base 51 . In addition, in order to support the slide support means 57 of the support frame 56, the movable member 58 and the slide rail 59 are provided in front of the base 51. That is, the driving point for moving the door 4 a is outside the frame 2 and is accommodated in the storage chamber 60 provided below the horizontal base 52 . The storage chamber 60 is composed of a horizontal base 52, surrounded by a substantially box-shaped lid 61 and a base 51 extending downward from the horizontal base 52, and is in a substantially sealed state.

對於蓋體61之底壁61a係連接有上述之排出管49。也就是,連接收容室60與排出管49。在本實施形態中,在3個裝載埠4之任一中,均連接收容室60與排出管49。經由此,成為可藉由收容室60而自排出管49排出循環路徑40的氣體者。在自排出管49排出氣體時,存在於收容室60內的灰塵亦可與氣體同時進行排出者。另外,在收容室60內,對於底壁61a上係設置有與排出管49對向之風扇62。由如此,設置風扇62於收容室60內者,抑制灰塵之揚起同時,容易自收容室60排出氣體於排出管49者。假設,設置將搬送室41內的氣體,朝向收容室60而送出的風扇之情況,容易對於搬送室41內的氣流產生混亂,而容易揚起搬送室41內的灰塵,但在本實施形態中,於收容室60內配置有風扇62之故,可抑制揚起搬送室41內的灰塵之情況。The above-mentioned discharge pipe 49 is connected to the bottom wall 61a of the cover 61. That is, the storage chamber 60 and the discharge pipe 49 are connected. In this embodiment, the storage chamber 60 and the discharge pipe 49 are connected to any one of the three loading ports 4 . Through this, the gas in the circulation path 40 can be discharged from the discharge pipe 49 through the storage chamber 60 . When the gas is discharged from the discharge pipe 49, the dust present in the storage chamber 60 may be discharged simultaneously with the gas. In addition, in the storage chamber 60, a fan 62 is provided on the bottom wall 61a to face the discharge pipe 49. In this way, disposing the fan 62 in the storage chamber 60 can suppress the dust from being raised and at the same time, it is easy to discharge gas from the storage chamber 60 to the exhaust pipe 49 . If a fan is provided to send the air in the transfer chamber 41 toward the storage chamber 60 , it is easy to cause confusion in the air flow in the transfer chamber 41 and easily raise dust in the transfer chamber 41 . However, in this embodiment , since the fan 62 is disposed in the storage chamber 60, the dust in the transfer chamber 41 can be suppressed from being raised.

接著,對於FOUP100的蓋101及門4a之開閉動作,於以下加以說明。首先,如圖7所示,在自基底51隔離之狀態,使載置台53朝向後方來移動,使載置於載置台53上之FOUP100,與蓋101和門4a接觸。此時,以開閉機構54的門4a,解除FOUP100的蓋101的鎖,且使蓋101保持。Next, the opening and closing operations of the cover 101 and the door 4a of the FOUP 100 will be described below. First, as shown in FIG. 7 , in a state of being isolated from the base 51 , the mounting base 53 is moved toward the rear, so that the FOUP 100 placed on the mounting base 53 comes into contact with the cover 101 and the door 4 a. At this time, the door 4a of the opening and closing mechanism 54 unlocks the cover 101 of the FOUP 100 and holds the cover 101.

接著,如圖8所示,使支持框體56朝向後方來移動。經由此,門4a及蓋101則移動於後方。由如此作為,FOUP100的蓋101開啟之同時,門4a則開啟,框體2之搬送室41與FOUP100則連通。Next, as shown in FIG. 8 , the support frame 56 is moved toward the rear. Through this, the door 4a and the cover 101 move to the rear. By doing this, when the cover 101 of the FOUP 100 is opened, the door 4a is opened, and the transfer chamber 41 of the frame 2 and the FOUP 100 are connected.

接著,如圖8所示,使支持框體56朝向下方來移動。經由此,門4a及蓋101則移動於下方。由如此作為,FOUP100則作為搬出入口而大開放,在FOUP100與EFEM1之間,可進行晶圓W之移動者。然而,關閉蓋101及門4a之情況係如進行與上述相反的動作即可。另外,裝載埠4之一連串的動作係經由裝載埠控制部12而加以控制。Next, as shown in FIG. 8 , the support frame 56 is moved downward. Through this, the door 4a and the cover 101 move downward. By doing this, the FOUP 100 is widely opened as a transfer entrance, and the wafer W can be moved between the FOUP 100 and the EFEM 1 . However, in order to close the cover 101 and the door 4a, the opposite operation to the above may be performed. In addition, a series of operations of the load port 4 are controlled via the load port control unit 12 .

如以上所述,當經由本實施形態之EFEM1時,3個供給口47a則在FFU設置室42內加以分散配置之故,可平均地供給氮於FFU設置室42全體者。因此,在FFU設置室42之3個FFU44的風扇44a(送風器)之吸入側的壓力不均則變小。隨之,自各風扇44a至搬送室41之氮的供給量則安定,在搬送室41內,容易垂直地流動氮(氮則形成層流),成為不易揚起塵埃。As described above, when passing through the EFEM 1 of this embodiment, the three supply ports 47a are dispersedly arranged in the FFU installation chamber 42, so that nitrogen can be evenly supplied to the entire FFU installation chamber 42. Therefore, the pressure unevenness on the suction side of the fans 44a (air blowers) of the three FFUs 44 in the FFU installation room 42 becomes smaller. Accordingly, the supply amount of nitrogen from each fan 44a to the transfer chamber 41 becomes stable, and nitrogen easily flows vertically in the transfer chamber 41 (nitrogen forms a laminar flow), making it less likely to raise dust.

另外,排出管49則與各裝載埠4之收容室60加以連接,對於循環路徑40之外部的氣體排出則藉由複數之排出管49及複數的收容室60而加以進行。因此,與僅設置1個排出管49之情況作比較,可平均地排出在搬送室41內流動於下方之氣體者。經由此,在搬送室41對於氮所形成之層流的影響則變小。另外,在搬送室41中氮所形成之層流係至少形成在晶圓W之搬送範圍200及其上方即可。In addition, the discharge pipe 49 is connected to the storage chamber 60 of each loading port 4, and the gas discharge to the outside of the circulation path 40 is performed through the plurality of discharge pipes 49 and the plurality of storage chambers 60. Therefore, compared with the case where only one discharge pipe 49 is provided, the gas flowing downward in the transfer chamber 41 can be discharged evenly. This reduces the influence on the laminar flow of nitrogen in the transfer chamber 41 . In addition, the laminar flow of nitrogen in the transfer chamber 41 may be formed at least in the transfer range 200 of the wafer W and above.

另外,對於搬送室41係於較搬送範圍200為下方配置有控制部收容箱81及計測機器收容箱82(設置物),開口28a係自垂直方向而視時,設置於未與基台部90及設置物之任一重疊之位置亦可。In addition, in the transfer chamber 41, the control unit storage box 81 and the measurement device storage box 82 (installation objects) are arranged below the transfer range 200, and the opening 28a is provided in a position not connected with the base portion 90 when viewed from the vertical direction. It can also be used at any overlapping position of the installation.

然而,本申請發明者係經由層流可視化之實驗,在搬送機器手臂3之上方,控制部收容箱81之上方,及計測機器收容箱82之上方的三處(參照圖3的點201、202、203)中,測定氣流速度,確認層流的形成狀態。在本實施形態中,在搬送範圍之氣流速度則呈成為0.3m/s而預先決定各FFU之旋轉數。其結果,確認到經由氣體衝突於搬送機器手臂3等,對於搬送範圍200之氣體的逆流係未有引起者。另外,即使使來自供給源111(參照圖3)之氮的供給量或風扇46(參照圖5)的旋轉數變化,亦確認到在上述之三處之間,氣體的流量差則成為不足30%者。也就是,即使設置設置物於搬送範圍200內,至少在搬送範圍200及其上方中,確認到形成有安定的層流者。However, the inventor of the present application conducted laminar flow visualization experiments at three locations above the transport robot arm 3, above the control unit storage box 81, and above the measurement machine storage box 82 (refer to points 201 and 202 in Figure 3 , 203), measure the air flow velocity and confirm the formation state of laminar flow. In this embodiment, the air flow velocity in the conveyance range is 0.3m/s and the rotation number of each FFU is determined in advance. As a result, it was confirmed that the gas passed through collided with the transport robot arm 3 and the like, and no backflow of gas was caused in the transport range 200 . In addition, even if the supply amount of nitrogen from the supply source 111 (see FIG. 3 ) or the rotational speed of the fan 46 (see FIG. 5 ) is changed, it is confirmed that the gas flow rate difference between the above three places is less than 30 %By. That is, even if the installation object is installed in the conveyance range 200, it is confirmed that a stable laminar flow is formed in at least the conveyance range 200 and above.

另外,供給口47a係呈朝向至支持板37之供給口47a的距離為最近之範圍37b而供給氮地加以構成。經由此,自供給口47a所供給的氮則首先接觸於支持板37之範圍37b,其態勢變弱之同時,沿著支持板37而流動。因此,自送出口27f~27h流動於FFU44之FFU設置室42內的氣流則不易混亂,在FFU設置室42之FFU44的吸入側之壓力不均則變小。隨之,加以抑制自各FFU44之風扇44a至搬送室41之氮的供給量的不均。In addition, the supply port 47a is configured to supply nitrogen toward the range 37b that is closest to the supply port 47a of the support plate 37. Through this, the nitrogen supplied from the supply port 47a first contacts the range 37b of the support plate 37, and flows along the support plate 37 while weakening. Therefore, the airflow flowing in the FFU installation chamber 42 of the FFU 44 from the delivery ports 27f to 27h is less likely to be disrupted, and the pressure unevenness on the suction side of the FFU 44 in the FFU installation chamber 42 becomes smaller. Accordingly, uneven supply of nitrogen from the fan 44a of each FFU 44 to the transfer chamber 41 is suppressed.

作為變形例,供給口47a係呈朝向框體2之天頂部的隔壁32或後端部之隔壁34而供給氮地加以構成亦可。在此中,亦與前述同樣地,自供給口47a所供給的氮之氣勢變弱而流動,更抑制自各FFU44之風扇44a至搬送室41之氮的供給量之不均。As a modified example, the supply port 47a may be configured to supply nitrogen toward the partition wall 32 at the top of the frame 2 or the partition wall 34 at the rear end. Here, similarly to the above, the gas momentum of the nitrogen supplied from the supply port 47a becomes weak and flows, and unevenness in the supply amount of nitrogen from the fan 44a of each FFU 44 to the transfer chamber 41 is further suppressed.

返還路徑43則由具有與4個空間21a~24a(第1流路)加以連接之空間27a(第2流路),於具有空間27a之連結管27,形成有送出口27f~27h者,來自搬送室41之氣體則藉由4個空間21a~24a,暫時流動於空間27a之後而流動至FFU設置室42。更詳細係如圖6所示,來自空間21a之空氣則通過空間27a而朝向於送出口27f,來自空間22a之空氣則通過空間27a而朝向於左右的送出口27f,27g,來自空間23a的空氣則通過空間27a而朝向於左右之送出口27g,27h,來自空間24a之空氣則通過空間27a而朝向於送出口27h流動。由如此,將來自4個空間21a~24a的氣體,暫時流動於空間27a者,呈為可吸收在4個空間21a~24a間之氣體的流通量不均者。在本實施形態中,空間21a,24a之開口面積則成為較空間22a,23a為大,而空間21a,24a則氣體的流通量變多,但在空間27a合流來自各空間21a~24a之氣體,自各送出口27f~27h送出至FFU設置室42。因此,較自各空間21a~24a直接送出氣體至FFU設置室42時,來自送出口27f~27h之氣體的送出量則為安定,亦加以抑制各風扇44a之吸入側的壓力不均,更抑制自各風扇44a至搬送室41之氮的供給量不均。The return path 43 has a space 27a (second flow path) connected to the four spaces 21a to 24a (first flow path), and is formed with delivery ports 27f to 27h in the connecting pipe 27 having the space 27a. The gas in the transfer chamber 41 passes through the four spaces 21a to 24a, temporarily flows into the space 27a, and then flows into the FFU installation chamber 42. In more detail, as shown in Figure 6, the air from space 21a passes through space 27a and heads to the outlet 27f, the air from space 22a passes through space 27a and heads to the left and right outlet 27f, 27g, and the air from space 23a Then, it passes through the space 27a and flows toward the left and right delivery ports 27g and 27h. The air from the space 24a flows through the space 27a and heads toward the delivery port 27h. In this way, the gas from the four spaces 21a to 24a temporarily flows into the space 27a, so that the gas flow rate between the four spaces 21a to 24a can be absorbed unevenly. In this embodiment, the opening areas of the spaces 21a and 24a are larger than those of the spaces 22a and 23a, and the gas circulation amounts in the spaces 21a and 24a are increased. However, the gases from the spaces 21a to 24a are combined in the space 27a, and the gases from the respective spaces 21a to 24a are combined. The delivery ports 27f to 27h deliver the material to the FFU installation room 42. Therefore, compared with the case where the gas is directly sent from the spaces 21a to 24a to the FFU installation chamber 42, the delivery amount of the gas from the delivery ports 27f to 27h is stable, and the pressure unevenness on the suction side of each fan 44a is suppressed, and the pressure from each fan 44a is also suppressed. The supply amount of nitrogen from the fan 44a to the transfer chamber 41 is uneven.

各送出口27f~27h係在左右方向中,各配置於鄰接之2個空間21a~24a間之故,即使對於來自鄰接之2個空間21a~24a之氣體的流通量有不均,來自送出口27f~ 27h之氣體的送出量則更為安定。因此,更一層加以抑制自風扇44a至搬送室41之氮的供給量不均。Since the delivery ports 27f to 27h are arranged in the left-right direction between the two adjacent spaces 21a to 24a, even if there is uneven flow of gas from the two adjacent spaces 21a to 24a, the delivery ports will The amount of gas delivered from 27f to 27h is more stable. Therefore, the uneven supply amount of nitrogen from the fan 44a to the transfer chamber 41 is further suppressed.

另外,各送出口27f~27h係在前後方向中,配置於在與供給口47a之間夾持風扇44a之位置。經由此,自返還路徑43流動至風扇44a之FFU設置室42內的氣流則不易混亂,更一層加以抑制自各風扇44a至搬送室41之氮的供給量不均。In addition, each of the delivery ports 27f to 27h is disposed in a position sandwiching the fan 44a between the supply port 47a and the front-rear direction. Thereby, the air flow in the FFU installation chamber 42 flowing from the return path 43 to the fan 44a is less likely to be disrupted, and uneven supply of nitrogen from the fans 44a to the transfer chamber 41 is further suppressed.

以上,以對於本發明之最佳的實施形態加以說明過,但本發明並非限定於上述之實施形態者,只要在記載於申請專利範圍之範圍內,可作種種之變更者。在前述之實施形態中,形成於供給管47之3個供給口47a則在FFU設置室42中,加以分散配置,但於供給管47,2或4以上的供給口47a則在FFU設置室42中,加以分散配置亦可。另外,取代於供給管47,將多孔質管(例如,多孔石等)則配置於FFU設置室42亦可。在此,亦可將多孔質管的複數之供給口,加以分散配置於FFU設置室42,可得到與前述實施形態同樣的效果者。The best embodiments of the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope described in the patent application. In the aforementioned embodiment, the three supply ports 47a formed in the supply pipe 47 are dispersedly arranged in the FFU installation chamber 42. However, in the supply pipe 47, two or more supply ports 47a are arranged in the FFU installation chamber 42. , it can also be configured in a distributed manner. In addition, instead of the supply pipe 47, a porous pipe (for example, porous stone, etc.) may be disposed in the FFU installation chamber 42. Here, a plurality of supply ports of the porous tubes may be dispersedly arranged in the FFU installation chamber 42, and the same effect as that of the above-mentioned embodiment can be obtained.

另外,複數的供給口47a係配置於各FFU設置室42亦可。也就是,配置於框體2之前端部側亦可。另外,作為氣體吸引口之開口28a係配置於較搬送室41之下部為上方亦可。另外,返還路徑43係僅由作為第1流路之空間21a~24a而加以構成,而自各空間21a~24a直接送出氣體於FFU設置室42亦可。此情況,作為第1流路的空間為1~3或5以上亦可。另外,返還路徑43則具有作為第2流路之空間27a的情況,作為第1流路之空間則為2,3或5以上亦可。In addition, a plurality of supply ports 47a may be arranged in each FFU installation chamber 42. That is, it may be disposed on the front end side of the frame 2 . In addition, the opening 28a serving as the gas suction port may be arranged above the lower part of the transfer chamber 41. In addition, the return path 43 is composed only of the spaces 21a to 24a as the first flow path, and the gas may be directly sent from the spaces 21a to 24a to the FFU installation chamber 42. In this case, the number of spaces used as the first flow path may be 1 to 3 or 5 or more. In addition, the return path 43 may have 2, 3, or 5 or more spaces as the second flow path.

另外,各送出口27f~27h則在左右方向中,未配置於鄰接之2個空間21a~24a間亦可。風扇44a(FFU44)係設置2或4以上亦可。此情況,連通口37a亦如與風扇44a作對應而形成於支持板37即可。In addition, each of the delivery ports 27f to 27h may not be arranged between the two adjacent spaces 21a to 24a in the left-right direction. The number of fans 44a (FFU44) may be 2 or 4 or more. In this case, the communication port 37a may be formed in the support plate 37 corresponding to the fan 44a.

另外,取代送出口27f~27h,而例如,作為將形成有多數的孔之穿孔金屬板(未圖示),設置於連結管27之上面全體等,改變氣體的流動亦可。In addition, instead of the delivery ports 27f to 27h, for example, a perforated metal plate (not shown) formed with a plurality of holes may be provided on the entire upper surface of the connecting pipe 27 to change the flow of the gas.

另外,形成於柱21~24及連結管27內部之空間21a~24a,27a則作成返還路徑43之構成,但並不限定於此。即,返還路徑43係經由其他的構件而形成亦可。In addition, the spaces 21a to 24a and 27a formed inside the columns 21 to 24 and the connecting pipe 27 serve as the return path 43, but the structure is not limited thereto. That is, the return path 43 may be formed through other members.

1:EFEM 2:框體 3:搬送機器手臂(基板搬送裝置) 4:裝載埠 21a~24a:空間(第1流路) 27a:空間(第2流路) 27f~27h:送出口 28a:開口(氣體吸引口) 33:隔壁 33a1:開口 37:支持板 37a:連通口 37b:範圍 41:搬送室 42:FFU設置室(上部空間) 43:返還路徑(氣體返還路徑) 44a:風扇(送風器) 47:供給管(非活性氣體供給手段) 47a:供給口 49:排出管(氣體排出手段) W:晶圓(基板) 1:EFEM 2: Frame 3: Transport robot arm (substrate transport device) 4: Loading port 21a~24a: Space (1st flow path) 27a: Space (2nd flow path) 27f~27h: Send to the exit 28a: Opening (gas suction port) 33: Next door 33a1: Open your mouth 37: Support board 37a: Connecting port 37b: Range 41: Transport room 42: FFU installation room (upper space) 43: Return path (gas return path) 44a: Fan (air blower) 47: Supply pipe (inactive gas supply means) 47a: Supply port 49: Discharge pipe (gas discharge means) W: Wafer (substrate)

圖1係顯示有關本發明之第一實施形態的EFEM及其周邊的概略構成的平面圖。 圖2係顯示圖1所示之EFEM之電性構成的圖。 圖3係自前方而視圖1所示之框體時之正面圖。 圖4係沿著圖3所示之IV-IV線的剖面圖。 圖5係沿著圖3所示之V-V線的剖面圖。 圖6係沿著圖3所示之VI-VI線的剖面圖。 圖7係顯示關閉門之狀態的裝載埠之側剖面圖。 圖8係顯示開啟門之狀態的裝載埠之側剖面圖。 FIG. 1 is a plan view showing the schematic configuration of the EFEM and its surroundings according to the first embodiment of the present invention. FIG. 2 is a diagram showing the electrical structure of the EFEM shown in FIG. 1 . Figure 3 is a front view of the frame shown in Figure 1 from the front. FIG. 4 is a cross-sectional view along line IV-IV shown in FIG. 3 . FIG. 5 is a cross-sectional view along line V-V shown in FIG. 3 . FIG. 6 is a cross-sectional view along line VI-VI shown in FIG. 3 . Figure 7 is a side cross-sectional view of the loading port showing the state of the door being closed. Figure 8 is a side cross-sectional view of the loading port showing the state of the door being opened.

2:框體 21a:空間(第1流路) 22a:空間(第1流路) 23a:空間(第1流路) 24a:空間(第1流路) 27:連結管 27a:空間(第2流路) 27b:連通口 27c:連通口 27d:連通口 27e:連通口 27f:送出口 27g:送出口 27h:送出口 37:支持板 37a:連通口 42:FFU設置室(上部空間) 44:FFU 45:化學過濾器 47:供給管(非活性氣體供給手段) 47a:供給口 48:外部配管 2: Frame 21a: Space (1st flow path) 22a: Space (1st flow path) 23a: Space (1st flow path) 24a: Space (1st flow path) 27: Connecting tube 27a: Space (2nd flow path) 27b: Connecting port 27c: Connecting port 27d: Connecting port 27e: Connecting port 27f: Send to the exit 27g: sent to export 27h: Send to the exit 37: Support board 37a: Connecting port 42: FFU installation room (upper space) 44:FFU 45: Chemical filter 47: Supply pipe (inactive gas supply means) 47a: Supply port 48: External piping

Claims (6)

一種EFEM,其特徵為具備:藉由於設置在隔壁之開口,連接裝載埠而加以閉鎖,將為了搬送基板之搬送室構成於內部的框體、 和配置於前述搬送室內,進行前述基板之搬送的基板搬運裝置、 和設置於前述框體內,為了構成上部空間於前述搬送室的上方之間隔構件、 和為了供給非活性氣體於前述上部空間之非活性氣體供給手段、 和形成於前述間隔構件,連通前述搬送室與前述上部空間之連通口、 和被覆前述連通口地加以配置,藉由前述連通口,為了將前述上部空間的非活性氣體,傳送至前述搬送室的送風器、 和設置於前述搬送室的下部,吸引前述搬送室內之非活性氣體的氣體吸引口、 和使自前述氣體吸引口所吸引之非活性氣體,返還至前述上部空間的氣體返還路徑、 和為了排出前述搬送室內的氣體之氣體排出手段; 前述非活性氣體供給手段係具備在前述上部空間內,沿著將前述框體以平面所視時之長度方向加以配置之供給管,前述供給管係具有為了供給非活性氣體的複數之供給口。 An EFEM characterized by having a frame in which a transfer chamber for transferring substrates is built in and locked by openings provided in the partition walls, connected to the loading port, and and a substrate transfer device disposed in the transfer chamber to transfer the substrate, and are installed in the aforementioned frame, and are provided with a partition member above the aforementioned transfer chamber in order to form an upper space, and inert gas supply means for supplying inert gas to the aforementioned upper space, and a communication port formed in the aforementioned partition member to communicate the aforementioned transfer chamber and the aforementioned upper space, and an air blower arranged to cover the communication port in order to transmit the inert gas in the upper space to the transfer chamber through the communication port. and a gas suction port provided at the lower part of the aforementioned transfer chamber to suck inert gas in the aforementioned transfer chamber, and a gas return path for returning the inert gas sucked from the gas suction port to the upper space, and gas exhaust means for exhausting the gas in the aforementioned transfer chamber; The inert gas supply means includes a supply pipe arranged in the upper space along the length direction of the frame when viewed in a plan view, and the supply pipe has a plurality of supply ports for supplying the inert gas. 一種EFEM,其特徵為具備:藉由於設置在隔壁之開口,連接裝載埠而加以閉鎖,將為了搬送基板之搬送室構成於內部的框體、 和配置於前述搬送室內,進行前述基板之搬送的基板搬運裝置、 和設置於前述框體內,為了構成上部空間於前述搬送室的上方之間隔構件、 和為了供給非活性氣體於前述上部空間之非活性氣體供給手段、 和形成於前述間隔構件,連通前述搬送室與前述上部空間之連通口、 和被覆前述連通口地加以配置,藉由前述連通口,為了將前述上部空間的非活性氣體,傳送至前述搬送室的送風器、 和設置於前述搬送室的下部,吸引前述搬送室內之非活性氣體的氣體吸引口、 和使自前述氣體吸引口所吸引之非活性氣體,返還至前述上部空間的氣體返還路徑、 和為了排出前述搬送室內的氣體之氣體排出手段; 前述非活性氣體供給手段係具有在前述上部空間內,避開前述返還路徑與前述上部空間之連接部上部,進行分散配置,為供給非活性氣體的複數之供給口。 An EFEM characterized by having a frame in which a transfer chamber for transferring substrates is built in and locked by openings provided in the partition walls, connected to the loading port, and and a substrate transfer device disposed in the transfer chamber to transfer the substrate, and are installed in the aforementioned frame, and are provided with a partition member above the aforementioned transfer chamber in order to form an upper space, and inert gas supply means for supplying inert gas to the aforementioned upper space, and a communication port formed in the aforementioned partition member to communicate the aforementioned transfer chamber and the aforementioned upper space, and an air blower arranged to cover the communication port in order to transmit the inert gas in the upper space to the transfer chamber through the communication port. and a gas suction port provided at the lower part of the aforementioned transfer chamber to suck inert gas in the aforementioned transfer chamber, and a gas return path for returning the inert gas sucked from the gas suction port to the upper space, and gas exhaust means for exhausting the gas in the aforementioned transfer chamber; The inert gas supply means has a plurality of supply ports for supplying the inert gas, which are dispersedly arranged in the upper space, avoiding the upper portion of the connection portion between the return path and the upper space. 如請求項2記載之EFEM,其中,前述複數之供給口係具備沿著令前述框體以平面所視時之長度方向加以配置之供給管, 前述供給管係連通令前述框體以平面所視時之短邊方向之隔壁。 The EFEM according to Claim 2, wherein the plurality of supply ports include supply pipes arranged along the length direction of the frame when viewed in a plane, The supply pipe system is connected to a partition wall in the short side direction of the frame when viewed in a plane. 如請求項1~3之任1項記載之EFEM,其中,前述複數之供給口係從較前述送風器更上游,供給非活性氣體者。Such as the EFEM described in any one of claims 1 to 3, wherein the plurality of supply ports supply inert gas from upstream of the air blower. 如請求項1~3之任1項記載之EFEM,其中,前述複數之供給口係避開前述送風器之上部加以配置。Such as the EFEM described in any one of claims 1 to 3, wherein the plurality of supply ports are arranged so as to avoid the upper part of the air blower. 如請求項4記載之EFEM,其中,前述複數之供給口係避開前述送風器之上部加以配置。In the EFEM described in claim 4, the plurality of supply ports are arranged so as to avoid the upper part of the air blower.
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