TWI821138B - Equipment front-end module (EFEM) - Google Patents
Equipment front-end module (EFEM) Download PDFInfo
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- TWI821138B TWI821138B TW112110392A TW112110392A TWI821138B TW I821138 B TWI821138 B TW I821138B TW 112110392 A TW112110392 A TW 112110392A TW 112110392 A TW112110392 A TW 112110392A TW I821138 B TWI821138 B TW I821138B
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- 238000012546 transfer Methods 0.000 claims abstract description 130
- 239000011261 inert gas Substances 0.000 claims abstract description 55
- 238000004891 communication Methods 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims description 102
- 238000005192 partition Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 31
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 137
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 69
- 238000009434 installation Methods 0.000 abstract description 53
- 239000000428 dust Substances 0.000 abstract description 12
- 239000003570 air Substances 0.000 description 39
- 235000012431 wafers Nutrition 0.000 description 28
- 238000012545 processing Methods 0.000 description 21
- 230000007246 mechanism Effects 0.000 description 17
- 230000032258 transport Effects 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 238000005259 measurement Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67775—Docking arrangements
Abstract
本發明係一種設備前端模組(EFEM),其課題為在搬送室內,成為容易垂直地流動非活性氣體,而作為不易揚起塵埃。 解決手段為EFEM係包含:構成搬送室於內部之框體(2),和在框體(2)內,為了構成FFU設置室(42)於搬送室的上方之支持板(37),和為了供給氮於FFU設置室(42)之供給管(47),和呈各被覆形成於支持板(37)之連通口(37a)地加以配置之3個風扇。供給管(47)係具有在FFU設置室(42)內加以分散配置之3個供給口(47a)。 The present invention is an equipment front-end module (EFEM), the subject of which is to make it easier for inert gas to flow vertically in a transfer chamber and to make it less likely to raise dust. The solution is that the EFEM system includes: a frame (2) that constitutes the transfer chamber inside, and a support plate (37) above the transfer chamber in order to form an FFU installation chamber (42) inside the frame (2), and in order to A supply pipe (47) that supplies nitrogen to the FFU installation chamber (42), and three fans are arranged so as to cover the communication ports (37a) formed in the support plate (37). The supply pipe (47) has three supply ports (47a) dispersedly arranged in the FFU installation chamber (42).
Description
本發明係有關供給非活性氣體於閉鎖的搬送室,可置換為非活性氣體環境之EFEM(Equipment Front End Module)。The present invention relates to an EFEM (Equipment Front End Module) that supplies inert gas to a closed transfer chamber and can be replaced with an inert gas environment.
對於專利文獻1係對於包含:載置收容有晶圓(半導體基板)之FOUP(Front-Opening Unified Pod)的裝載埠,和由連接裝載埠於設置在前面壁的開口者而加以閉鎖,形成有進行晶圓的搬送之搬送室的框體;在對於晶圓施以特定處理之處理裝置與FOUP之間進行晶圓的授受之EFEM加以記載。
以往,對於在晶圓上所製造之半導體電路之搬送室內的氧或水分等的影響係為少,但近年,伴隨著半導體電路之更細微化,此等的影響則明顯化。因此,記載於專利文獻1之EFEM係以非活性氣體的氮填充搬送室內地加以構成。具體而言,EFEM係具有:以為了在框體的內部使氮循環之搬送室與氣體返還路徑所構成之循環流路,和供給氮於氣體返還路徑的上部空間之氣體供給手段,和配置於氣體返還路徑之上部空間,將非活性氣體送出於搬送室的複數之風扇,和自氣體返還路徑之下部,排出氮之氣體排出手段。氮係因應循環流路內的氧濃度等之變動而加以適宜供給及排出。經由此,可將搬送室內保持為氮環境氣者。
[先前技術文獻]
[專利文獻]
In the past, the influence of oxygen, moisture, etc. in the transfer chamber on semiconductor circuits manufactured on wafers has been small. However, in recent years, as semiconductor circuits have become more miniaturized, these effects have become more significant. Therefore, the EFEM described in
[專利文獻1] 日本特開2015-146349號公報[Patent Document 1] Japanese Patent Application Publication No. 2015-146349
[發明欲解決之課題][Problem to be solved by the invention]
但在記載於上述專利文獻1之EFEM中,係氣體供給手段連接於氣體返還路徑之上部空間,自其連接處,即1處之供給口加以供給非活性氣體之故,而在上部空間內,風扇的吸入側之壓力則於各風扇產生不均,對於自各風扇至搬送室的供給量產生不均。也就是,自複數的風扇之排列方向的一方側,加以供給非活性氣體的情況,對於一方的風扇係雖供給有充份量的非活性氣體,但對於另一方側的風扇之非活性氣體的供給量則比較於一方而變少。也就是在上部空間內,一方的風扇之吸入側的壓力則變為較另一方的風扇為大,而對於自各風扇至搬送室的非活性氣體的供給量產生不均。其結果,對於在搬送室的非活性氣體的氣流產生混亂,產生有容易揚起灰塵之問題。However, in the EFEM described in the above-mentioned
因此,在本發明之目的係提供:容易將非活性氣體垂直地流入至搬送室內,而可不易揚起灰塵之EFEM者。 [為了解決課題之手段] Therefore, an object of the present invention is to provide an EFEM that can easily flow inert gas vertically into a transfer chamber and can hardly raise dust. [To solve the problem]
本發明之EFEM係具備:由連接裝載埠於設置在隔壁之開口者而加以閉鎖,將為了搬送基板之搬送室構成於內部的框體,和配置於前述搬送室內,進行前述基板之搬送的基板搬送裝置,和設置於前述框體內,為了構成上部空間於前述搬送室的上方之間隔構件,和為了供給非活性氣體於前述上部空間之非活性氣體之非活性氣體供給手段,和形成於前述間隔構件,使前述搬送室與前述上部空間連通之複數的連通口,和呈各被覆前述連通口地加以配置,藉由前述連通口而為了傳送前述上部空間的非活性氣體於前述搬送室的複數之送風器,和設置於前述搬送室的下部,吸引前述搬送室內之非活性氣體的氣體吸引口,和使自前述氣體吸引口所吸引之非活性氣體,返還至前述上部空間的氣體返還路徑,和為了排出前述搬送室內的氣體之氣體排出手段。並且,前述非活性氣體供給手段係具有:在前述上部空間內,加以分散配置,為了供給非活性氣體的複數之供給口。The EFEM system of the present invention includes a frame that connects a loading port to an opening provided in a partition and locks it, and has a transfer chamber for transferring substrates inside, and a substrate that is disposed in the transfer chamber to transfer the substrates. A conveying device, and an inert gas supply means for supplying inert gas to the inert gas in the above-mentioned upper space, and an inert gas supply means provided in the above-mentioned frame, and a partition member is provided above the above-mentioned transfer chamber in order to form an upper space, and is formed in the above-mentioned partition. A member, a plurality of communication openings connecting the transfer chamber and the upper space, and each of the communication openings is arranged to cover the communication openings, and the inert gas in the upper space is transferred to the plurality of transfer chambers through the communication openings. an air blower, a gas suction port provided at the lower part of the transfer chamber to suck inert gas in the transfer chamber, and a gas return path for returning the inert gas sucked from the gas suction port to the upper space, and Gas exhaust means for exhausting the gas in the transfer chamber. Furthermore, the inert gas supply means has a plurality of supply ports dispersedly arranged in the upper space for supplying the inert gas.
當經由此時,成為可將自非活性氣體供給手段供給至上部空間的非活性氣體,自複數的供給口分散進行供給者。因此,成為可遍佈全體均勻供給非活性氣體於上部空間,而在上部空間之複數的送風器之吸入側的壓力不均變小。隨之,對於自各送風器至搬送室的非活性氣體之供給量,不易產生不均。其結果,在搬送室內,成為容易垂直地流動非活性氣體,而不易揚起塵埃。Through this, the inert gas supplied from the inert gas supply means to the upper space can be distributed and supplied from a plurality of supply ports. Therefore, the inert gas can be uniformly supplied to the upper space throughout the entire space, and the pressure unevenness on the suction sides of the plurality of air blowers in the upper space becomes smaller. Accordingly, unevenness in the supply amount of the inert gas from each air blower to the transfer chamber is less likely to occur. As a result, the inert gas easily flows vertically in the transfer chamber and becomes less likely to raise dust.
在本發明中,前述供給口係在為了間隔前述上部空間與外部空間的前述框體之隔壁及前述間隔構件之任一中,呈朝向至前述供給口之距離最近的範圍,供給非活性氣體地加以構成者為佳。經由此,自供給口所供給之非活性氣體則接觸於間隔構件及隔壁之任一,其勢力則變弱之同時,沿著間隔構件及隔壁之任一而流動非活性氣體。因此,自氣體返還路徑流動至送風器的上部空間內之氣流則成為不易混亂,在上部空間的複數之送風器的吸入側之壓力不均則變更小。隨之,更抑制自各送風器至搬送室的非活性氣體之供給量不均。In the present invention, the supply port is located in any one of the partition wall and the partition member of the frame that separates the upper space and the external space, and is oriented toward a range closest to the supply port to supply the inert gas. The one that is composed is better. Through this, the inert gas supplied from the supply port contacts either the partition member or the partition wall, and its force is weakened, and the inert gas flows along either the partition member or the partition wall. Therefore, the air flow flowing from the gas return path to the upper space of the air blower becomes less likely to be disrupted, and the pressure unevenness on the suction sides of the plurality of air blowers in the upper space becomes smaller. Accordingly, uneven supply of the inert gas from each air blower to the transfer chamber is further suppressed.
另外,本發明中,前述氣體吸引口係加以複數設置於前述搬送室的下部,而前述氣體返還路徑係具有:自各複數的前述氣體吸引口朝向於上方而延伸存在的複數之第1流路,和與前述複數之第1流路連接之第2流路,更具有為了將前述第2流路內的氣體送出於前述上部空間的送出口者為佳。經由此,來自搬送室的氣體則藉由複數之第1流路,暫時流動於第2流路之後,流動至上部空間。如此,由暫時將來自複數之第1流路的氣體流動至第2流路者,成為可吸收在複數之第1流路間的氣體之流通量不均者。因此,較自各第1流路,直接送出氣體於上部空間時,來自送出口之氣體的送出量則為安定,更抑制自各送風器至搬送室之非活性氣體的供給量不均。In addition, in the present invention, a plurality of the gas suction ports are provided in the lower part of the transfer chamber, and the gas return path has a plurality of first flow paths extending upward from each of the plurality of gas suction ports, It is preferable that the second flow path connected to the plurality of first flow paths further has a delivery port for sending the gas in the second flow path out of the upper space. Through this, the gas from the transfer chamber passes through the plurality of first flow paths, temporarily flows into the second flow paths, and then flows into the upper space. In this way, by temporarily flowing the gas from the plurality of first flow paths to the second flow path, it becomes possible to absorb the uneven flow rate of the gas between the plurality of first flow paths. Therefore, compared with when the gas is directly sent to the upper space from each first flow path, the amount of gas sent from the outlet is more stable, and the uneven supply amount of the inert gas from each air blower to the transfer chamber is further suppressed.
另外,在本發明中,前述第2流路係沿著前述複數之第1流路的排列方向而延伸存在,而前述送出口係在該排列方向中,各配置於鄰接之2個前述第1流路間者為佳。經由此,自送出口至上部空間的氣體之送出量則更安定,更一層抑制自各送風器至搬送室的非活性氣體之供給量不均。In addition, in the present invention, the second flow path extends along the arrangement direction of the plurality of first flow paths, and the delivery ports are each arranged at two adjacent first flow paths in the arrangement direction. The one between the flow paths is better. Through this, the amount of gas delivered from the outlet to the upper space becomes more stable, and uneven supply of inert gas from each air blower to the transfer chamber is further suppressed.
另外,在本發明中,前述送出口係在與前述複數之送風器的排列方向交叉之交叉方向中,在與前述供給口之間,配置於夾持前述送風器的位置者為佳。經由此,自氣體返還路徑流動至送風器的上部空間內之氣流則變為不易混亂,更一層抑制自各送風器至搬送室的非活性氣體之供給量不均。Furthermore, in the present invention, it is preferable that the outlet is disposed at a position sandwiching the air blower between the outlet and the supply port in an intersecting direction intersecting the arrangement direction of the plurality of air blowers. Through this, the air flow flowing from the gas return path to the upper space of the air blower becomes less likely to be disrupted, further suppressing uneven supply of the inert gas from each air blower to the transfer chamber.
另外,本發明之EFEM係在其他的觀點中,具備:由連接裝載埠於設置在隔壁之開口者而加以閉鎖,將為了搬送基板之搬送室構成於內部的框體,和設置於前述框體內,為了構成上部空間於前述搬送室的上方之間隔構件,形成於前述間隔構件,使前述搬送室與前述上部空間連通之複數的連通口,和設置於前述連通口,為了傳送前述上部空間的氣體於前述搬送室的複數之送風器,和設置於前述搬送室的下部,吸引該搬送室內之氣體的複數之氣體吸引口,和使自各前述氣體吸引口所吸引之氣體,返還至前述上部空間的氣體返還路徑。並且,前述氣體返還路徑係具備:自前述複數之氣體吸引口延伸存在之複數的第1流路,和連接於前述複數之第1流路而自前述第1流路,流入前述氣體之同時,將前述氣體送出至前述上部空間的第2流路。In addition, in another aspect, the EFEM of the present invention is provided with a frame that connects the loading port to an opening provided in the partition and locks it, and includes a transfer chamber for transferring the substrate inside, and is provided in the frame. In order to form a partition member between the upper space above the transfer chamber, a plurality of communication ports are formed on the partition member to connect the transfer chamber and the upper space, and the communication ports are provided in order to transmit the gas in the upper space. A plurality of air blowers in the transfer chamber, a plurality of gas suction ports provided at the lower part of the transfer chamber to suck gas in the transfer chamber, and a device that returns the gas sucked from each of the gas suction ports to the upper space. Gas return path. Furthermore, the gas return path includes a plurality of first flow paths extending from the plurality of gas suction ports, and is connected to the plurality of first flow paths so that the gas flows from the first flow paths, The gas is sent to the second flow path of the upper space.
當經由此時,來自搬送室的氣體則藉由複數之第1流路,暫時流動於第2流路之後,流動至上部空間。如此,由暫時將來自複數之第1流路的氣體流動至第2流路者,成為可吸收在複數之第1流路間的氣體之流量不均者。因此,較自各第1流路,直接送出氣體於上部空間時,來自送出口之氣體的送出量則為安定,抑制自各送風器至搬送室之氣體的供給量不均。When passing through this, the gas from the transfer chamber passes through the plurality of first flow paths, temporarily flows into the second flow paths, and then flows to the upper space. In this way, by temporarily flowing the gas from the plurality of first flow paths to the second flow path, it becomes possible to absorb the uneven flow rate of the gas between the plurality of first flow paths. Therefore, compared with when the gas is directly sent to the upper space from each first flow path, the amount of gas sent from the outlet is more stable, and the uneven supply amount of gas from each air blower to the transfer chamber is suppressed.
另外,在本發明中,前述第2流路係延伸存在於與前述第1流路的延伸存在方向交叉之方向,而流動在前述氣體返還路徑的前述氣體係在自前述第1流路流動在前述第2流路時,變更其氣流的方向,且對於在自前述第2流路流入至前述上部空間時,亦變更該氣流的方向者為佳。經由此,在第2流路中,可作為緩和在第1流路的延伸存在方向的氣體的流動者。隨之,與自第1流路至上部空間,未變更氣流的方向而氣體直接流入至上部空間之情況作比較,可作為不易混亂上部空間內的氣流者。In addition, in the present invention, the second flow path extends in a direction intersecting the extending direction of the first flow path, and the gas system flowing in the gas return path flows from the first flow path. It is preferable to change the direction of the air flow when entering the second flow path, and also to change the direction of the air flow when flowing from the second flow path to the upper space. Through this, the second flow path can serve as a means to relax the flow of gas in the extending direction of the first flow path. Therefore, compared with the case where the direction of the air flow is not changed from the first flow path to the upper space and the gas flows directly into the upper space, it can be considered that the air flow in the upper space is less likely to be disturbed.
另外,在本發明中,具有:固定位置之基台部,和配置於前述基台部之上方,搬送前述基板之搬送部,更具備配置於前述搬送室內之基板搬送裝置,對於前述搬送室係配置有設置物於較經由前述搬送部而搬送基板之搬送範圍為下方,前述氣體吸引口係自垂直方向而視時,配置於未與前述基台部及前述設置物之任一重疊之位置亦可。 [發明效果] In addition, in the present invention, there is a base portion at a fixed position, a conveying portion disposed above the base portion, and conveying the substrate, and a substrate conveying device disposed in the conveying chamber. The conveying chamber is The installation object is disposed below the conveying range of the substrate through the conveyance part, and the gas suction port is disposed at a position that does not overlap with any of the base part and the installation object when viewed from the vertical direction. Can. [Effects of the invention]
當經由本發明之EFEM時,成為可遍佈全體均勻供給非活性氣體於上部空間,而在上部空間之複數的送風器之吸入側的壓力不均變小。隨之,對於自各送風器至搬送室的非活性氣體之供給量,不易產生不均。其結果,在搬送室內,成為容易垂直地流動非活性氣體,而不易揚起塵埃。When the EFEM of the present invention is used, the inert gas can be uniformly supplied to the upper space throughout the entire space, and the pressure unevenness on the suction side of the plurality of air blowers in the upper space becomes smaller. Accordingly, unevenness in the supply amount of the inert gas from each air blower to the transfer chamber is less likely to occur. As a result, the inert gas easily flows vertically in the transfer chamber and becomes less likely to raise dust.
以下,對於有關本發明之一實施形態的EFEM1,參照圖1~圖8同時,於以下加以說明。然而,說明的方便上,將圖1所示之方向作為前後左右方向。即,在本實施形態中,將排列有EFEM(Equipment Front End Module)1與基板處理裝置6之方向作為前後方向,而將EFEM1側作為前方,將基板處理裝置6側作為後方。另外,將與前後方向正交,排列複數之裝載埠4之方向作為左右方向。另外,與前後方向及左右方向的雙方正交之方向作為上下方向。Hereinafter, an
(EFEM及周邊的概略構成)
首先,對於EFEM1及其周邊的概略構成,使用圖1及圖2而加以說明。圖1係顯示有關本實施形態之EFEM1及其周邊的概略構成之平面圖。圖2係顯示EFEM1之電性構成的圖。如圖1所示,EFEM1係包括:框體2,和搬送機器手臂3(基板搬送裝置),和3個裝載埠4,和控制裝置5。對於EFEM1之後方係配置有對於晶圓W(基板)施以特定處裡之基板處理裝置6。EFEM1係經由配置於框體2內之搬送機器手臂3,在載置於裝載埠4之FOUP(Front-Opening Unified Pod)100與基板處理裝置6之間,進行晶圓W的授受。FOUP100係排列複數之晶圓W於上下方向而可收容之容器,而設置有開閉可能的蓋101於後端部(在前後方向之框體2側的端部)。FOUP100係例如,經由公知的OHT(天頂行走式無人搬送車:未圖示)而進行搬送。在OHT與裝載埠4之間,進行FOUP100之授受。
(Schematic structure of EFEM and surrounding areas)
First, the schematic structure of EFEM1 and its surroundings will be described using FIGS. 1 and 2 . FIG. 1 is a plan view showing the schematic configuration of the
框體2係為了連接3個裝載埠4與基板處理裝置6之構成。對於框體2之內部係形成有對於外部空間而言作為略密閉,為了將晶圓W未暴露於外氣而進行搬送的搬送室41。當EFEM1稼動時,搬送室41係以氮而加以填充。然而,在本實施形態中,搬送室41係以氮加以填充,但如為非活性氣體,亦可維持氮以外的構成(例如,氬等)。框體2係在呈氮循環在包含搬送室41之內部空間地加以構成(對於詳細係後述之)。另外,對於框體2之後端部係安裝有開閉可能的門2a,而搬送室41係隔著門2a而與基板處理裝置6連接。The
搬送機器手臂3係配置於搬送室41內,進行晶圓W的搬送。搬送機器手臂3係具有:固定位置之基台部90(參照圖3),和配置於基台部90之上方,保持晶圓W而進行搬送的手臂機構70(搬送部,參照圖3),和機器手臂控制部11(參照圖2)。搬送機器手臂3係主要進行取出FOUP100內之晶圓W而交付至基板處理裝置6之動作,或接受經由基板處理裝置6所處理之晶圓W而返回至FOUP100之動作。The
裝載埠4係為了載置FOUP100(參照圖7)之構成。複數之裝載埠4係如圖1及圖5所示,沿著框體2之前側的隔壁33,排列配置於左右方向。各裝載埠4係各閉鎖在位於後端的空間51(參照圖7),形成於框體2之隔壁33的3個開口33a1(參照圖4)。經由此,於框體2內,搬送室41則構成為略密閉空間。另外,裝載埠4係可置換FOUP100內之環境氣為氮。對於裝載埠4之後端部係設置有後述之開閉機構54之一部分的門4a。門4a係經由門驅動機構55(開閉機構54之一部分)而加以開閉。門4a係可解除FOUP100的蓋101的鎖,且可保持蓋101地加以構成。在門4a保持解除鎖的蓋101之狀態,由門驅動機構55則開啟門4a者,開啟蓋101。經由此,FOUP100內之晶圓W則成為可經由搬送機器手臂3而取出。另外,成為可經由搬送機器手臂3而將晶圓W收納於FOUP100內。The
如圖2所示,控制裝置5係與搬送機器手臂3之機器手臂控制部11,裝載埠4之裝載埠控制部12,基板處理裝置6之控制部(未圖示)加以電性連接,而進行與此等之控制部的通信。另外,控制裝置5係與設置於框體2內之氧濃度計85,壓力計86,濕度計87等加以電性連接,將此等之計測機器的計測結果進行收訊,把握有關框體2內之環境氣的資訊。另外,控制裝置5係與供給閥112及排出閥113(後述)加以電性連接,而由調節此等閥的開度者,適宜調節框體2內之氮環境氣。As shown in Figure 2, the
如圖1所示,基板處理裝置6係例如,具有加載互鎖真空室6a,和處理室6b。加載互鎖真空室6a係隔著框體2的門2a而與搬送室41加以連接,為了暫時使晶圓W待機的室。處理室6b係隔著門6c而與加載互鎖真空室6a加以連接。在處理室6b中,經由未圖示之處理機構,對於晶圓W施以特定的處理。As shown in FIG. 1 , the
(框體及其內部的構成)
接著,對於框體2及其內部的構成,使用圖3~圖6加以說明。圖3係自前方而視框體2時之正面圖。圖4係沿著圖3所示之IV-IV線的剖面圖。圖5係沿著圖3所示之V-V線的剖面圖。圖6係沿著圖3所示之VI-VI線的剖面圖。然而,在圖3及圖6中係省略隔壁的圖示。另外,在圖5中,省略搬送機器手臂3等之圖示,對於裝載埠4係以2點鎖鏈線而顯示。
(Frame and its internal composition)
Next, the structure of the
框體2係作為全體,具有略長方體形狀。如圖3~圖5所示,框體2係具有:柱21~26,和連結管27,和隔壁31~36。於延伸於上下方向的柱21~26,安裝有隔壁31~36,而框體2之內部空間(搬送室41及FFU設置室42)則對於外部空間而言略密閉地加以構成。The
更具體而言,如圖4所示,在框體2之前端部中,柱21~24則自左方朝向右方相互隔離之同時依序加以配置。也就是,4支的柱21~24係沿著左右方向而加以排列。另外,柱21~24係如圖3所示,呈沿著上下方向地加以立設。柱21,24係由配置於下側的第1部分21b,24b,和配置於上側的第2部分21c,24c而加以構成。第1部分21b,24b係立設於隔壁31上,其上端則連接於連結管27。另外,柱22,23亦立設於隔壁31上,其上端則連接於連結管27。此等第1部分21b,24b及柱22,23係其上下方向的長度則成為略相同長度。第2部分21c,24c係在連結管27上,立設於沿著上下方向與第1部分21b,24b重疊之位置。對於框體2之後端部的左右兩側係2支的柱25,26則沿著上下方向加以立設配置。連結管27係延伸存在於左右方向(4支的柱21~24之排列方向),與4支的柱21~24相互加以連接。More specifically, as shown in FIG. 4 , in the front end of the
如圖3所示,於框體2之底部配置有隔壁31,而於天頂部配置有隔壁32。如圖4所示,各於前端部配置有隔壁33,而於後端部配置有隔壁34,於左端部配置有隔壁35,於右端部配置有隔壁36。對於隔壁33係形成有前述之3個開口33a1。此等3個開口33a1係在左右方向中,配置於4個柱21~24間,而經由裝載埠4之基底51而加以閉鎖。對於框體2之右端部係設置有配置有後述之定位器84的載置部83(參照圖3)。定位器84及載置部83亦收容於框體2之內側(參照圖4)。As shown in FIG. 3 , a
如圖5所示,在框體2內之上側部分,對於連結管27之後端側係配置有延伸於水平方向之支持板37(間隔構件)。經由此,框體2之內部係分為前述之搬送室41,和形成於搬送室41之上方之FFU設置室42。也就是,經由支持板37,在框體2之內部空間中,於搬送室41之上方,構成有作為上部空間的FFU設置室42。As shown in FIG. 5 , in the upper portion of the
對於FFU設置室42內係配置有後述之3個FFU(風扇過濾單元)44。在支持板37之前後方向的中央部,對向於與FFU44上下方向之位置,係形成有使搬送室41與FFU設置室42連通之3個連通口37a。此等3個連通口37a係如圖6所示,沿著左右方向加以排列配置。另外,3個連通口37a係在左右方向中,配置於4支的柱21~24間。然而,框體2之隔壁33~36係分為搬送室41用之下部壁與FFU設置室42用之上部壁(例如,參照在圖5之前端部的隔壁33a,33b及後端部之隔壁34a,34b)。各FFU44係在後述之搬送範圍200之氣流速度則呈成為期望的值而預先決定旋轉數。作為在搬送範圍200之氣流速度係不足1m/s,理想係0.1m/s~0.7m/s,而更理想係0.2m/s~0.6m/s,因應目標的值而決定各FFU之旋轉數。Three FFU (fan filter units) 44 to be described later are arranged in the
接著,對於框體2之內部的構成加以說明。具體而言,對於為了在框體2內使氮循環之構成及其周邊構成,以及配置於搬送室41內之機器等加以說明。Next, the internal structure of the
對於為了在框體2內使氮循環之構成及其周邊構成,使用圖3~圖6加以說明。如圖5所示,對於框體2之內部係形成有為了使氮循環之循環路徑40。循環路徑40係經由搬送室41,和FFU設置室42,和返還路徑43(氣體返還路徑)而加以構成。在循環路徑40中,自FFU設置室42,將清淨的氮通過各連通口37a而送出於下方,到達至搬送室41之下端部之後,成為通過返還路徑43而上升,呈返回於FFU設置室42(參照圖5之箭頭)。以下,詳細說明。The structure for circulating nitrogen in the
對於FFU設置室42係如圖5及圖6所示,設置有配置於支持板37上之3個FFU44,和配置於FFU44上之3個化學過濾器45。各FFU44係如圖5所示,具有風扇44a(送風器)與過濾器44b,作為呈被覆連通口37a而加以配置於支持板37上。FFU44係如由圖6中箭頭所示,經由風扇44a而將FFU設置室42內的氮,自FFU44之周圍吸入送出於下方之同時,經由過濾器44b而除去含於氮之灰塵(未圖示)。化學過濾器45係例如,為了除去自基板處理裝置6帶入於循環路徑40內之活性氣體等之構成。經由FFU44及化學過濾器45所清淨化的氮係自FFU設置室42,藉由形成於支持板37之連通口37a而送出於搬送室41。送出於搬送室41的氮係形成層流,流動於下方。As shown in FIGS. 5 and 6 , the
返還路徑43係形成於配置於框體2之前端部的柱21~24(在圖5中係柱23)及連結管27。柱21,24之第1部分21b,24b、柱22,23、及連結管27之內部係成為中空,而各形成有相互可流通氮的空間21a~24a,27a(參照圖4)。柱21,24之第1部分21b,24b係如圖4所示,左右方向的寬度則成為較柱22,23為大。也就是,空間21a,24a(第1流路)之平面尺寸(即、第1部分21b,24b之開口面積)則成為較空間22a,23a(柱22,23之開口面積)為大。另外,空間21a~24a(第1流路)係延伸存在於上下方向而加以形成,均自柱21~24的下端延伸存在至連結管27之位置。The
連結管27係加以配置於框體2之前端部。連結管27之空間27a(第2流路)係延伸存在於左右方向。另外,對於連結管27之下面係如圖5及圖6所示,形成有為了使空間21a~24a與空間27a相互連通之連通口27b~27e。另外,對於連結管27之上面係如圖6所示,形成有朝向FFU設置室42(即,朝向上方)開口之3個送出口27f~27h。此等3個送出口27f~27h係在左右方向中,配置於4支柱21~24間,而相互於左右方向具有長尺之矩形平面形狀。另外,3個送出口27f~27h係配置於框體2之前端部。如此,連結管27係使自4個空間21a~24a流入的氮一旦合流之後,可自3個送出口27f~27h送出至FFU設置室42地加以構成。氮在自空間21a~24a流動於空間27a時,其氣流的方向則自上方變更為左右方向,且自空間27a,藉由送出口27f~27h而流入至FFU設置室42時,其氣流的方向則自左右方向而變更為上方。經由如此之空間21a~24a,27a而構成返還路徑43。另外,3個送出口27f~27h係配置於與FFU44沿著前後方向而重疊之位置。也就是,各對應連接於前後方向之送出口27f~27h與FFU44。並且,3個送出口27f~27h係長尺地形成於左右方向,具有比較大的開口面積。因此,自各送出口27f~27h送出至FFU設置室42之氣體的流動則變為緩和,而3個FFU44之吸入側(上方側)之壓力不均則變小。然而,自送出口27f~27h送出至FFU設置室42之氣體係如圖5所示,通過隔壁33與FFU44之間而流動於上方。The connecting
對於返還路徑43,參照圖5之同時更具體地加以說明。然而,對於圖5係顯示柱23,但對於其他的柱21,24之第1部分21b,24b及柱22亦為相同。對於柱23之下端部,係安裝有為了容易使搬送室41內的氮流入至返還路徑43(空間23a)之導入導管28。導入導管28係亦同樣地安裝於其他的柱21,22,24。然而,柱21,24係較柱23寬度寬地形成於左右方向之故,在所安裝之導入導管28中,亦寬度寬地加以形成,但除此以外係為同樣的構成。對於導入導管28係形成有開口28a,到達至搬送室41之下端部的氮則成為可流入至返還路徑43。也就是,開口28a係將搬送室41內的氮吸引至返還路徑43之氣體吸引口。另外,開口28a係朝向下方而加以構成。因此,成為可將自上方到達至隔壁31的氣體,未混亂來自上方之氣體的流動而平順地吸入者。更且,成為可將由開口28a吸入的氣體,對於上方未改變氣流方向而流動者。The
對於導入導管28之上部,係形成有越朝向下方越擴散於後方之擴大部28b。在導入導管28內,對於擴大部28b的下方係配置有風扇46。風扇46係經由未圖示之馬達而加以驅動,將到達至搬送室41之下端部的氮,吸入於返還路徑43(在圖5中係空間23a)而送出至上方,將氮返回至FFU設置室42。返回至FFU設置室42的氮係自化學過濾器45之上面吸入至FFU44側,經由此等FFU44或化學過濾器45而加以清淨化,再次藉由連通口37a而送出至搬送室41。由以上作為,氮則成為可循環在循環路徑40內。The upper portion of the
另外,如圖3所示,對於FFU設置室42之後端上部(即,框體2之後端部),係配置有為了供給氮於FFU設置室42(循環路徑40)內之供給管47。供給管47係與連接於氮的供給源111之外部配管48加以連接。對於外部配管48之途中部位,係設置有可變更氮的每單位時間之供給量的供給閥112。經由此等供給管47,外部配管48,供給閥112及供給源111而加以構成非活性氣體供給手段。然而,非活性氣體供給線則設置於工場等之情況,係如連接該供給線與供給管47即可。因此,非活性氣體供給手段係僅自供給管47而加以構成亦可。In addition, as shown in FIG. 3 , a
供給管47係如圖3及圖6所示,沿著左右方向而延伸存在,而形成有3個供給口47a。3個供給口47a係沿著左右方向而相互隔離加以配置,而自供給管47供給氮於FFU設置室42內。此等3個供給口47a係如圖5及圖6所示,形成於供給管47之下端,而呈與支持板37之供給管47朝向對向於上下方向的範圍37b(即,至支持板37之供給口47a的距離為最近的範圍),加以供給氮地加以構成。另外,3個供給口47a係在左右方向,配置於與FFU44之中心相同之位置關係。經由此,3個供給口47a係在前後方向中,配置於在送出口27f~27h之間夾持風扇44a之位置。As shown in FIGS. 3 and 6 , the
當自如此之供給管47之3個供給口47a供給氮於FFU設置室42時,3個供給口47a則在FFU設置室42內加以分散配置之故,氮則平均供給至FFU設置室42全體。例如,自連接於框體2之右端部的外部配管48之1個供給口,直接供給氮於FFU設置室42內之情況,FFU設置室42之右方部分的壓力則上升。即,配置於最右方之FFU44之吸入側的壓力則成為較其他2個FFU44為大。如此,當於FFU44之吸入側的壓力產生大的不均時,對於自3個FFU44至搬送室41之氮的供給量容易產生不均。但在本實施形態中,係自相互隔離而配置於左右方向之3個供給口47a供給氮之故,3個FFU44之吸入側的壓力不均則變小。隨之,自3個FFU44至搬送室41之氮的供給量則安定,送出至搬送室41的氮則形成層流,流動至下方。When nitrogen is supplied to the
另外,如圖5所示,對於裝載埠4之下端係連接有為了排出循環路徑40內的氣體的排出管49。然而,裝載埠4係如後述,收容有門驅動機構55之收容室60則藉由形成於基底51之縫隙51b而連通著(參照圖7)。並且,排出管49則連接於收容室60。排出管49係例如,連結於未圖示之排氣埠,而對於其途中部位係設置有可變更循環路徑40內之氣體的每單位時間之排出量的排出閥113。經由此等排出管49及排出閥113而加以構成氣體排出手段。In addition, as shown in FIG. 5 , a
供給閥112及排出閥113係與控制裝置5電性連接(參照圖2)。經由此,成為可適宜供給及排出氮於循環路徑40之情況。例如,始動EFEM1時(例如,包含維護EFEM1之後開始始動時等),循環路徑40內之氧濃度上升之情況,自供給源111,藉由外部配管48及供給管47而將氮供給至循環路徑40,由藉由排出管49而排出循環路徑40及收容室60內之氣體(氣體:包含氮及氧等)者,可降低氧濃度。也就是,可將循環路徑40及收容室60內置換為氮環境氣者。然而,當使EFEM1稼動時,循環路徑40內的氧濃度上升之情況,亦由一時性地多供給氮於循環路徑40,藉由排出管49而與氮同時排出氧者,可降低氧濃度。例如,在使氮循環之形式的EFEM1中,係抑制自循環路徑40至外部之氮的漏出同時,為了確實地抑制自外部至循環路徑40之大氣的侵入,必須將循環路徑40內的壓力,較外部的壓力為稍微高地進行保持。具體而言係1Pa(G)~3000Pa(G)之範圍內,而理想為3Pa(G)~500Pa(G)、更理想為5Pa(G)~ 100Pa(G)。因此,控制裝置5係當循環路徑40內之壓力則自特定的範圍脫離時,由變更排出閥113的開度者而變更氮的排出流量,壓力則呈成為特定之目標壓力地進行調節。如此,依據氧濃度而調節氮的供給流量,再由依據壓力而調節氮的排出流量者,加以抑制氧濃度及壓力。在本實施形態中,呈成為10Pa(G)之差壓進行調整。The
接著,對於配置於搬送室41內的機器等,使用圖3及圖4而加以說明。如圖3及圖4所示,對於搬送室41內係配置有上述之搬送機器手臂3,和控制部收容箱81,和計測機器收容箱82,和定位器84。控制部收容箱81係例如,設置於搬送機器手臂3之基台部90(參照圖3)的左方,設置於較經由手臂機構70(參照圖3)而搬送晶圓W之搬送範圍200為下方。對於控制部收容箱81係收容有上述之機器手臂控制部11或裝載埠控制部12。計測機器收容箱82係例如,配置於基台部90之右方,配置於較手臂機構70之搬送範圍200為下方。對於計測機器收容箱82係成為可收容有上述之氧濃度計85,壓力計86,濕度計87等之計測機器(參照圖2)。控制部收容箱81及計測機器收容箱82則相當於本發明之設置物。上述之導入導管28(參照圖4)係配置於基台部90,控制部收容箱81,及計測機器收容箱82之前方。也就是,開口28a係自上下方向(垂直方向)而視時,配置於基台部90,控制部收容箱81,及計測機器收容箱82之任一均未重疊之位置(參照圖4,圖5)。Next, the equipment and the like arranged in the
定位器84係為了檢出保持於搬送機器手臂3之手臂機構70(參照圖3)之晶圓W的保持位置,自目標保持位置偏移多少之構成。例如,在經由上述之OHT(未圖示)所搬送之FOUP100(參照圖1)之內部中,晶圓W則有微妙移動之虞。因此,搬送機器手臂3係將自FOUP100取出之處理前的晶圓W,暫時載置於定位器84。定位器84係計測晶圓W經由搬送機器手臂3而保持在自目標保持位置偏移多少之位置,將計測結果送訊至機器手臂控制部11。機器手臂控制部11係依據上述計測結果,補正經由手臂機構70之保持位置,控制手臂機構70而使晶圓W保持在目標保持位置,搬送至基板處理裝置6之加載互鎖真空室6a。經由此,可正常地進行經由基板處理裝置6之晶圓W的處理。The
(裝載埠之構成)
接著,對於裝載埠之構成,參照圖7及圖8之同時,於以下加以說明。圖7係顯示關閉門之狀態的裝載埠之側剖面圖。圖8係顯示開啟門之狀態的裝載埠之側剖面圖。然而,圖7及圖8係在拆除位置於載置台53之下方的外部蓋體4b(參照圖5)之狀態所描繪。
(Construction of loading port)
Next, the structure of the loading port will be described below with reference to FIGS. 7 and 8 . Figure 7 is a side cross-sectional view of the loading port showing the state of the door being closed. Figure 8 is a side cross-sectional view of the loading port showing the state of the door being opened. However, FIGS. 7 and 8 illustrate a state in which the
如圖7所示,裝載埠4係具有:沿著上下方向而立設之板狀的基底51,和自此基底51之上下方向的中央部分朝向前方而突出加以形成之水平基部52。對於水平基部52之上部係設置有為了載置FOUP100之載置台53。載置台53係在載置FOUP100之狀態,成為可經由載置台驅動部(未圖示)而移動於前後方向者。As shown in FIG. 7 , the
基底51係構成自外部空間隔離搬送室41的隔壁33之一部分。基底51係自前方而視,具有於上下方向長尺之略矩形平面形狀。另外,基底51係於與所載置之FOUP100可對向於前後方向的位置,形成有窗部51a。另外,基底51係在上下方向中,於較水平基部52為下方位置,形成有延伸存在於後述之支持框體56可移動之上下方向的縫隙51b。縫隙51b係支持框體56則在貫通基底51之狀態,僅形成於可移動於上下之範圍,而左右方向的開口寬度則變小。因此,收容室60之灰塵則不易自縫隙51b侵入至搬送室41。The base 51 forms part of the
裝載埠4係具有可開閉FOUP100的蓋101之開閉機構54。開閉機構54係具有:可閉鎖窗部51a的門4a,和為了使門4a驅動的門驅動機構55。門4a係可閉鎖窗部51a地加以構成。另外,門4a係可解除FOUP100的蓋101的鎖,且可保持蓋101地加以構成。門驅動機構55係包含:為了支持門4a之支持框體56,和藉由滑件支持手段57而將支持框體56可移動於前後方向之可動部件58,和將此可動部件58,對於基底51而言可移動於上下方向地支持之滑軌59。The
支持框體56係支持門4a之後部下方的構成,而在朝向下方而延伸存在之後,通過設置於基底51之縫隙51b而朝向基底51之前方突出之略彎曲狀的板狀構件。並且,為了支持此支持框體56之滑件支持手段57,可動部件58及滑軌59係設置於基底51之前方。即,為了使門4a移動之驅動處則在框體2之外側,收容於設置於水平基部52之下方的收容室60。收容室60係由水平基部52,和自水平基部52朝向下方而延伸存在之略箱狀的蓋體61與基底51而加以圍繞所構成,作為略密閉狀態。The
對於蓋體61之底壁61a係連接有上述之排出管49。也就是,連接收容室60與排出管49。在本實施形態中,在3個裝載埠4之任一中,均連接收容室60與排出管49。經由此,成為可藉由收容室60而自排出管49排出循環路徑40的氣體者。在自排出管49排出氣體時,存在於收容室60內的灰塵亦可與氣體同時進行排出者。另外,在收容室60內,對於底壁61a上係設置有與排出管49對向之風扇62。由如此,設置風扇62於收容室60內者,抑制灰塵之揚起同時,容易自收容室60排出氣體於排出管49者。假設,設置將搬送室41內的氣體,朝向收容室60而送出的風扇之情況,容易對於搬送室41內的氣流產生混亂,而容易揚起搬送室41內的灰塵,但在本實施形態中,於收容室60內配置有風扇62之故,可抑制揚起搬送室41內的灰塵之情況。The above-mentioned
接著,對於FOUP100的蓋101及門4a之開閉動作,於以下加以說明。首先,如圖7所示,在自基底51隔離之狀態,使載置台53朝向後方來移動,使載置於載置台53上之FOUP100,與蓋101和門4a接觸。此時,以開閉機構54的門4a,解除FOUP100的蓋101的鎖,且使蓋101保持。Next, the opening and closing operations of the
接著,如圖8所示,使支持框體56朝向後方來移動。經由此,門4a及蓋101則移動於後方。由如此作為,FOUP100的蓋101開啟之同時,門4a則開啟,框體2之搬送室41與FOUP100則連通。Next, as shown in FIG. 8 , the
接著,如圖8所示,使支持框體56朝向下方來移動。經由此,門4a及蓋101則移動於下方。由如此作為,FOUP100則作為搬出入口而大開放,在FOUP100與EFEM1之間,可進行晶圓W之移動者。然而,關閉蓋101及門4a之情況係如進行與上述相反的動作即可。另外,裝載埠4之一連串的動作係經由裝載埠控制部12而加以控制。Next, as shown in FIG. 8 , the
如以上所述,當經由本實施形態之EFEM1時,3個供給口47a則在FFU設置室42內加以分散配置之故,可平均地供給氮於FFU設置室42全體者。因此,在FFU設置室42之3個FFU44的風扇44a(送風器)之吸入側的壓力不均則變小。隨之,自各風扇44a至搬送室41之氮的供給量則安定,在搬送室41內,容易垂直地流動氮(氮則形成層流),成為不易揚起塵埃。As described above, when passing through the
另外,排出管49則與各裝載埠4之收容室60加以連接,對於循環路徑40之外部的氣體排出則藉由複數之排出管49及複數的收容室60而加以進行。因此,與僅設置1個排出管49之情況作比較,可平均地排出在搬送室41內流動於下方之氣體者。經由此,在搬送室41對於氮所形成之層流的影響則變小。另外,在搬送室41中氮所形成之層流係至少形成在晶圓W之搬送範圍200及其上方即可。In addition, the
另外,對於搬送室41係於較搬送範圍200為下方配置有控制部收容箱81及計測機器收容箱82(設置物),開口28a係自垂直方向而視時,設置於未與基台部90及設置物之任一重疊之位置亦可。In addition, in the
然而,本申請發明者係經由層流可視化之實驗,在搬送機器手臂3之上方,控制部收容箱81之上方,及計測機器收容箱82之上方的三處(參照圖3的點201、202、203)中,測定氣流速度,確認層流的形成狀態。在本實施形態中,在搬送範圍之氣流速度則呈成為0.3m/s而預先決定各FFU之旋轉數。其結果,確認到經由氣體衝突於搬送機器手臂3等,對於搬送範圍200之氣體的逆流係未有引起者。另外,即使使來自供給源111(參照圖3)之氮的供給量或風扇46(參照圖5)的旋轉數變化,亦確認到在上述之三處之間,氣體的流量差則成為不足30%者。也就是,即使設置設置物於搬送範圍200內,至少在搬送範圍200及其上方中,確認到形成有安定的層流者。However, the inventor of the present application conducted laminar flow visualization experiments at three locations above the
另外,供給口47a係呈朝向至支持板37之供給口47a的距離為最近之範圍37b而供給氮地加以構成。經由此,自供給口47a所供給的氮則首先接觸於支持板37之範圍37b,其態勢變弱之同時,沿著支持板37而流動。因此,自送出口27f~27h流動於FFU44之FFU設置室42內的氣流則不易混亂,在FFU設置室42之FFU44的吸入側之壓力不均則變小。隨之,加以抑制自各FFU44之風扇44a至搬送室41之氮的供給量的不均。In addition, the
作為變形例,供給口47a係呈朝向框體2之天頂部的隔壁32或後端部之隔壁34而供給氮地加以構成亦可。在此中,亦與前述同樣地,自供給口47a所供給的氮之氣勢變弱而流動,更抑制自各FFU44之風扇44a至搬送室41之氮的供給量之不均。As a modified example, the
返還路徑43則由具有與4個空間21a~24a(第1流路)加以連接之空間27a(第2流路),於具有空間27a之連結管27,形成有送出口27f~27h者,來自搬送室41之氣體則藉由4個空間21a~24a,暫時流動於空間27a之後而流動至FFU設置室42。更詳細係如圖6所示,來自空間21a之空氣則通過空間27a而朝向於送出口27f,來自空間22a之空氣則通過空間27a而朝向於左右的送出口27f,27g,來自空間23a的空氣則通過空間27a而朝向於左右之送出口27g,27h,來自空間24a之空氣則通過空間27a而朝向於送出口27h流動。由如此,將來自4個空間21a~24a的氣體,暫時流動於空間27a者,呈為可吸收在4個空間21a~24a間之氣體的流通量不均者。在本實施形態中,空間21a,24a之開口面積則成為較空間22a,23a為大,而空間21a,24a則氣體的流通量變多,但在空間27a合流來自各空間21a~24a之氣體,自各送出口27f~27h送出至FFU設置室42。因此,較自各空間21a~24a直接送出氣體至FFU設置室42時,來自送出口27f~27h之氣體的送出量則為安定,亦加以抑制各風扇44a之吸入側的壓力不均,更抑制自各風扇44a至搬送室41之氮的供給量不均。The
各送出口27f~27h係在左右方向中,各配置於鄰接之2個空間21a~24a間之故,即使對於來自鄰接之2個空間21a~24a之氣體的流通量有不均,來自送出口27f~ 27h之氣體的送出量則更為安定。因此,更一層加以抑制自風扇44a至搬送室41之氮的供給量不均。Since the
另外,各送出口27f~27h係在前後方向中,配置於在與供給口47a之間夾持風扇44a之位置。經由此,自返還路徑43流動至風扇44a之FFU設置室42內的氣流則不易混亂,更一層加以抑制自各風扇44a至搬送室41之氮的供給量不均。In addition, each of the
以上,以對於本發明之最佳的實施形態加以說明過,但本發明並非限定於上述之實施形態者,只要在記載於申請專利範圍之範圍內,可作種種之變更者。在前述之實施形態中,形成於供給管47之3個供給口47a則在FFU設置室42中,加以分散配置,但於供給管47,2或4以上的供給口47a則在FFU設置室42中,加以分散配置亦可。另外,取代於供給管47,將多孔質管(例如,多孔石等)則配置於FFU設置室42亦可。在此,亦可將多孔質管的複數之供給口,加以分散配置於FFU設置室42,可得到與前述實施形態同樣的效果者。The best embodiments of the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope described in the patent application. In the aforementioned embodiment, the three
另外,複數的供給口47a係配置於各FFU設置室42亦可。也就是,配置於框體2之前端部側亦可。另外,作為氣體吸引口之開口28a係配置於較搬送室41之下部為上方亦可。另外,返還路徑43係僅由作為第1流路之空間21a~24a而加以構成,而自各空間21a~24a直接送出氣體於FFU設置室42亦可。此情況,作為第1流路的空間為1~3或5以上亦可。另外,返還路徑43則具有作為第2流路之空間27a的情況,作為第1流路之空間則為2,3或5以上亦可。In addition, a plurality of
另外,各送出口27f~27h則在左右方向中,未配置於鄰接之2個空間21a~24a間亦可。風扇44a(FFU44)係設置2或4以上亦可。此情況,連通口37a亦如與風扇44a作對應而形成於支持板37即可。In addition, each of the
另外,取代送出口27f~27h,而例如,作為將形成有多數的孔之穿孔金屬板(未圖示),設置於連結管27之上面全體等,改變氣體的流動亦可。In addition, instead of the
另外,形成於柱21~24及連結管27內部之空間21a~24a,27a則作成返還路徑43之構成,但並不限定於此。即,返還路徑43係經由其他的構件而形成亦可。In addition, the
1:EFEM
2:框體
3:搬送機器手臂(基板搬送裝置)
4:裝載埠
21a~24a:空間(第1流路)
27a:空間(第2流路)
27f~27h:送出口
28a:開口(氣體吸引口)
33:隔壁
33a1:開口
37:支持板
37a:連通口
37b:範圍
41:搬送室
42:FFU設置室(上部空間)
43:返還路徑(氣體返還路徑)
44a:風扇(送風器)
47:供給管(非活性氣體供給手段)
47a:供給口
49:排出管(氣體排出手段)
W:晶圓(基板)
1:EFEM
2: Frame
3: Transport robot arm (substrate transport device)
4:
圖1係顯示有關本發明之第一實施形態的EFEM及其周邊的概略構成的平面圖。 圖2係顯示圖1所示之EFEM之電性構成的圖。 圖3係自前方而視圖1所示之框體時之正面圖。 圖4係沿著圖3所示之IV-IV線的剖面圖。 圖5係沿著圖3所示之V-V線的剖面圖。 圖6係沿著圖3所示之VI-VI線的剖面圖。 圖7係顯示關閉門之狀態的裝載埠之側剖面圖。 圖8係顯示開啟門之狀態的裝載埠之側剖面圖。 FIG. 1 is a plan view showing the schematic configuration of the EFEM and its surroundings according to the first embodiment of the present invention. FIG. 2 is a diagram showing the electrical structure of the EFEM shown in FIG. 1 . Figure 3 is a front view of the frame shown in Figure 1 from the front. FIG. 4 is a cross-sectional view along line IV-IV shown in FIG. 3 . FIG. 5 is a cross-sectional view along line V-V shown in FIG. 3 . FIG. 6 is a cross-sectional view along line VI-VI shown in FIG. 3 . Figure 7 is a side cross-sectional view of the loading port showing the state of the door being closed. Figure 8 is a side cross-sectional view of the loading port showing the state of the door being opened.
2:框體
21a:空間(第1流路)
22a:空間(第1流路)
23a:空間(第1流路)
24a:空間(第1流路)
27:連結管
27a:空間(第2流路)
27b:連通口
27c:連通口
27d:連通口
27e:連通口
27f:送出口
27g:送出口
27h:送出口
37:支持板
37a:連通口
42:FFU設置室(上部空間)
44:FFU
45:化學過濾器
47:供給管(非活性氣體供給手段)
47a:供給口
48:外部配管
2:
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JP2018048470A JP7140960B2 (en) | 2018-03-15 | 2018-03-15 | EFEM |
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KR (2) | KR102652346B1 (en) |
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KR20190109246A (en) | 2019-09-25 |
JP7140960B2 (en) | 2022-09-22 |
JP2022162003A (en) | 2022-10-21 |
TWI799449B (en) | 2023-04-21 |
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CN110277338A (en) | 2019-09-24 |
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