JP4744175B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus including a transfer chamber that introduces and exhausts outside air, a load lock chamber, and the like.

  A substrate processing apparatus that performs a predetermined process such as an etching process or a film forming process on a substrate to be processed such as a glass substrate (for example, a liquid crystal substrate) or a semiconductor wafer (hereinafter also simply referred to as a “wafer”) is, for example, a wafer. A processing unit having a load lock chamber connected to a processing chamber for performing a predetermined processing is provided, and a wafer is transferred (wafer loading / unloading) to the processing unit by a transfer mechanism such as a transfer arm. A room is provided.

  In such a transfer chamber, for example, an unprocessed wafer stored in a cassette container is taken out by a transfer mechanism and delivered to the processing unit. As a result, the unprocessed wafer is transferred to the processing chamber via the load lock chamber, and the wafer is processed in the processing chamber. The processed wafer that has been processed in the processing chamber is returned from the processing chamber to the load lock chamber. Then, in the transfer chamber, the processed wafer returned to the load lock chamber by the transfer mechanism is received and collected in the cassette container.

  In such a substrate processing apparatus, in order to prevent particles (for example, dust, dust, deposits, reaction products, etc.) that cause a decrease in yield on the wafer from adhering to the wafer, for example, the wafer is delivered in the atmosphere. An air supply fan that takes in outside air from the air supply port is provided in the upper part of the transfer chamber, and an exhaust port is provided in the lower part. By driving this air supply fan, outside air is taken in from the air supply port. By exhausting from the air, a constant gas flow (for example, air downflow) from the upper part to the lower part in the transfer chamber is formed. Since the substrate processing apparatus is usually installed in a clean room, the air in the clean room is introduced into the transfer room and returned from the transfer room to the clean room.

JP 2001-15578 A JP-A-6-224144 kanzawa.K, Kitano.J, "A semiconductor device manufacturer'sefforts for controlling and evaluating atmospheric pollution", (AdvancedSemiconductor Manufacturing Conference and Workshop, 1995.ASMC 95 Proceedings.IEEE/SEMI 1995), 13-15 Nov 1995, pp.190 -193

However, when the processed wafer is collected by the transfer chamber, the processed gas may be carried into the transfer chamber with the gas component of the processing gas attached to the processed wafer. In such a case, according to the transfer chamber as described above, such a gas component is exhausted together with the air in the transfer chamber to, for example, a clean room. Depending on the type of the gas component contained in the exhaust, the clean room is contaminated. There is a risk of doing. For example, when a corrosive gas such as a gas containing Cl or Br is used as the processing gas, air containing such a gas component (for example, Cl ₂ , Br ₂ , HCl, HBr, etc.) is exhausted from the transfer chamber to the clean room. If it is done, the equipment in the clean room may corrode.

  In this regard, it may be necessary to connect the exhaust port of the transfer room to the factory exhaust system (for example, abatement equipment) and exhaust all the exhaust from the transfer room to the factory exhaust system. There is a problem that the burden on the exhaust system of the factory increases.

  Conventionally, in a substrate processing apparatus or a clean room, a filter is provided on the air supply side of the substrate processing chamber or the clean room so as to prevent particles from entering the substrate processing apparatus or the clean room, thereby removing the particles. For example, Patent Document 1 and Non-Patent Document 1 are provided with a filter on the air supply side (upper side) in the entire clean room in which a substrate processing apparatus or the like is arranged or in a region partitioning the clean room. A filter is provided on the air supply side (side portion side) of the heat treatment apparatus.

  However, in such a conventional substrate processing apparatus or clean room, a filter is provided on the air supply side, and the air supply side is considered so that particles do not enter the substrate processing apparatus or the clean room. Is not considered. Therefore, even if the supply side filter as in the prior art is applied to the transfer chamber of the substrate processing apparatus as it is, the above-described problem due to exhaust from the transfer chamber cannot be solved.

  Therefore, the present invention has been made in view of such problems, and the object of the present invention is, for example, that the gas components of the processing gas such as corrosive gas adhering to the processed substrate are mixed with the exhaust of the transfer chamber or the like. It is an object of the present invention to provide a substrate processing apparatus that can prevent discharge to the outside as it is and can reduce the burden on the exhaust equipment of a factory.

  In order to solve the above problems, according to one aspect of the present invention, a processing unit for performing a predetermined process on a substrate to be processed and a transfer chamber for carrying the substrate in and out of the processing unit are provided. In the substrate processing apparatus, the transfer chamber includes an air supply unit that introduces outside air into the transfer chamber, an exhaust unit that is provided opposite to the air supply unit and exhausts the transfer chamber, and an exhaust unit. There is provided a substrate processing apparatus provided with exhaust filter means for filtering the exhaust. In this case, the exhaust filter means is constituted by, for example, a harmful component removal filter that removes at least harmful components contained in the exhaust. Specifically, for example, a chemical filter or an activated carbon filter is used.

  According to such a substrate processing apparatus according to the present invention, for example, when a gas component of a processing gas such as a corrosive gas adheres to a processed substrate and is carried into the transfer chamber, the gas component of the processing gas Is removed by the exhaust filter and then exhausted to the outside. For this reason, it is possible to prevent the gas component from being discharged to the outside together with the exhaust from the transfer chamber or the like. Further, since the gas components adhering to the processed substrate and entering the transfer chamber can be removed and then exhausted, the exhaust of the transfer chamber is exhausted as it is outside the transfer chamber without going through the factory exhaust equipment, for example. can do. As a result, the burden on the exhaust system of the factory can be greatly reduced.

  The exhaust section includes an exhaust fan provided on the downstream side of the exhaust with respect to the exhaust filter means, so that the exhaust fan is not exposed to corrosive components contained in the exhaust, so that the exhaust fan is resistant to exhaust. There is no need to use corrosives.

  In addition, the air supply unit in the substrate processing apparatus preferably includes an air supply filter unit that filters outside air introduced into the transfer chamber. In this case, the air supply filter means is composed of, for example, an amine component removal filter that removes at least amine components (ammonia, amine, etc.) contained in the outside air introduced into the transfer chamber. Specifically, for example, a chemical filter or an activated carbon filter is used.

  According to this, by removing amine-based components (for example, ammonia) from the outside air introduced into the transfer chamber by the air supply filter means provided in the air supply unit, for example, processing of corrosive gas or the like on the processed substrate. When the gas component is carried into the transfer chamber or the like with the gas component attached, it is possible to prevent the gas component from being generated on the substrate by causing a chemical reaction with the amine component. In this way, not only the exhaust filter means is provided in the exhaust part, but also the air supply filter means is provided in the air supply part so that, for example, a countermeasure can be taken when the processed substrate is carried into the transfer chamber with the gas adhered thereto. It can be done perfectly.

  The air supply filter means may include not only the amine-based component removal filter but also a particle removal filter that removes particles contained in the outside air introduced into the transfer chamber. This prevents particles such as dust and dust from entering the transfer chamber along with the outside air.

  In order to solve the above problems, according to another aspect of the present invention, a processing unit for performing a predetermined process on a substrate to be processed, and a substrate to be processed are unloaded from the processing unit via a load lock chamber. A substrate processing apparatus including a transfer chamber, and the load lock chamber includes an air supply unit that introduces outside air into the load lock chamber, an acid exhaust unit that performs acid exhaust in the load lock chamber, and the acid lock unit. There is provided a substrate processing apparatus, comprising: an exhaust filter unit provided in an exhaust unit for filtering the acid exhaust. In this case, the exhaust filter means is constituted by, for example, a harmful component removal filter that removes at least harmful components contained in the exhaust gas.

  According to such a substrate processing apparatus according to the present invention, harmful components such as gas components of corrosive gas can be removed from the exhaust discharged through the acid exhaust portion of the load lock chamber. As a result, the acid exhaust part of the load lock chamber can be exhausted as it is without being connected to the factory exhaust system, so the burden on the factory exhaust system can be reduced.

  An air supply filter means for filtering outside air introduced into the load lock chamber may be provided in the air supply portion of the load lock chamber. In this case, the air supply filter means is constituted by, for example, an amine-based component removal filter that removes at least the amine-based component contained in the outside air introduced into the load lock chamber. As a result, for example, when a gas component of a processing gas such as a corrosive gas adheres to a processed substrate and is carried into the load lock chamber, the gas component causes a chemical reaction with an amine-based component such as ammonia. Thus, generation of particles on the substrate can be prevented.

  In order to solve the above problems, according to another aspect of the present invention, a substrate processing apparatus including a processing unit for performing a predetermined process on a substrate to be processed and a transfer chamber for carrying in and out of the processing unit. A standby unit having a substrate standby chamber connected to the transfer chamber and temporarily waiting for a substrate to be processed processed by the processing unit; and an exhaust unit for exhausting the substrate standby chamber; There is provided a substrate processing apparatus provided with an exhaust filter means provided in an exhaust part of the unit for filtering the acid exhaust. In this case, for example, the exhaust filter means includes a harmful component removal filter that removes at least harmful components contained in the exhaust.

  According to such a substrate processing apparatus according to the present invention, harmful components such as gas components of corrosive gas can be removed from the exhaust discharged through the exhaust unit of the standby unit. As a result, the exhaust unit of the standby unit can be exhausted as it is without being connected to the exhaust system of the factory, so the burden on the exhaust system of the factory can be reduced.

  In this case, a positioning device for positioning the substrate to be processed may be further connected to the transfer chamber, and the standby unit may be disposed directly below the positioning device. With such an arrangement, the working efficiency of the transport mechanism for transporting the substrate to be processed in the transport chamber can be improved, and the throughput can be improved.

  According to the present invention, for example, when a gas component of a processing gas such as a corrosive gas adheres on a processed substrate and is carried into a transfer chamber or the like, the gas component is directly discharged to the outside together with the exhaust of the transfer chamber or the like. It can prevent being discharged. As a result, the exhaust from the transfer chamber and the like can be exhausted directly into the clean room, for example. For this reason, it is not necessary to exhaust the exhaust from the transfer chamber or the like having a relatively large exhaust amount to, for example, the exhaust system of the factory, and the burden on the exhaust system of the factory can be greatly reduced.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

(Configuration example of substrate processing equipment)
First, a configuration example of a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. Here, a substrate processing apparatus in which at least one vacuum processing unit is connected to the transfer chamber will be described as an example. FIG. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus according to the present embodiment.

  The substrate processing apparatus 100 includes one or two or more vacuum processing units for performing various processes such as a film forming process and an etching process on a substrate to be processed such as a semiconductor wafer (hereinafter also simply referred to as “wafer”) W. 110 and a transfer unit 120 for transferring the wafer W to and from the vacuum processing unit 110. The transfer unit 120 has a transfer chamber 200 shared when transferring the wafer W.

  In FIG. 1, for example, two vacuum processing units 110 </ b> A and 110 </ b> B are arranged on the side surface of the transport unit 120. Each of the vacuum processing units 110A and 110B includes processing chambers 140A and 140B, and load lock chambers 150A and 150B that are connected to the processing chambers 140A and 140B and can be evacuated. The vacuum processing units 110A and 110B perform, for example, the same type of processing or different types of processing on the wafer W in the processing chambers 140A and 140B. In the processing chambers 140A and 140B, mounting tables 142A and 142B for mounting the wafer W are provided, respectively. Note that the number of vacuum processing units 110 including the processing chamber 140 and the load lock chamber 150 is not limited to two, and may be additionally provided.

The transfer chamber 200 of the transfer unit 120 is configured by a box having a substantially rectangular cross section in which an inert gas such as N ₂ gas or clean air is circulated. A plurality of cassette stands 132 </ b> A to 132 </ b> C are arranged in parallel on one side surface that forms a long side having a substantially rectangular cross section in the transfer chamber 200. These cassette bases 132A to 132C function as target substrate standby ports on which cassette containers 134A to 134C are placed. In FIG. 1, for example, three cassette containers 134A to 134C can be mounted one by one on each cassette base 132A to 132C, but the number of cassette bases and cassette containers is not limited to this. For example, one or two units may be provided, or four or more units may be provided.

Each cassette container 134A to 134C can accommodate, for example, a maximum of 25 wafers W placed in multiple stages at an equal pitch, and the inside has a sealed structure filled with, for example, an N ₂ gas atmosphere. Yes. The transfer chamber 200 is configured such that the wafer W can be transferred into and out of the transfer chamber 200 via gate valves 136A to 136C.

  In the transfer chamber 200, a common transfer mechanism (atmosphere side transfer mechanism) 160 for transferring the wafer W along the longitudinal direction (the arrow direction shown in FIG. 1) is provided. The common transport mechanism 160 is fixed on, for example, a base 162. The base 162 is moved on a guide rail (not shown) provided in the center of the transport chamber 200 along the length direction by, for example, a linear motor driving mechanism. It is configured to be slidable. The common transport mechanism 160 may be a double arm mechanism having two picks as shown in FIG. 1, for example, or may be a single arm mechanism having one pick.

  On the other side of the long side having a substantially rectangular cross section in the transfer chamber, the base ends of the two load lock chambers 150A and 150B are provided with gate valves (atmosphere side gate valves) 152A and 152B that can be opened and closed. They are connected to each other. The front ends of the load lock chambers 150A and 150B are connected to the processing chambers 140A and 140B via gate valves (vacuum side gate valves) 144A and 144B configured to be openable and closable, respectively.

  In each of the load lock chambers 150A and 150B, a pair of buffer mounting tables 154A, 156A and 154B, 156B for temporarily placing the wafer W on standby are provided. Here, the buffer mounting tables 154A and 154B on the transfer chamber side are the first buffer mounting tables, and the buffer mounting tables 156A and 156B on the opposite side are the second buffer mounting tables. Between the buffer mounting tables 154A and 156A and between 154B and 156B, there are provided individual transfer mechanisms (vacuum side transfer mechanisms) 170A and 170B made up of articulated arms that can be bent, stretched, turned, and raised and lowered. .

  Picks 172A and 172B are provided at the tips of the individual transfer mechanisms 170A and 170B, and the picks 172A and 172B are used to place the wafer W between the first and second buffer mounting tables 154A and 156A and 154B and 156B. You can transfer and transfer. Note that the wafers are carried into and out of the processing chambers 140A and 140B from the load lock chambers 150A and 150B using the individual transfer mechanisms 170A and 170B, respectively.

  An orientationer (pre-alignment stage) 137 as a wafer W positioning device is provided at one end of the transfer chamber 200, that is, on one side surface constituting a short side having a substantially rectangular cross section. The orienter 137 includes, for example, a rotary mounting table 138 and an optical sensor 139 that optically detects the peripheral portion of the wafer W, and performs alignment by detecting an orientation flat, a notch, or the like of the wafer W.

  An acid exhaust unit 300 serving as a standby unit is provided at the other end of the transfer chamber 200, that is, the other side surface constituting a short side having a substantially rectangular cross section. The acid exhaust unit 300 is on standby until no gas is released from the processed wafer W due to a gas component of the processing gas adhering to the processed wafer W. The configuration of such an acid exhaust unit 300 will be described later.

  In the configuration example of the substrate processing apparatus shown in FIG. 1, the case where the acid exhaust unit 300 is provided at the end opposite to the orienter 137 has been described as an example. The unit 300 may be provided at the end on the same side as the orienter 137, that is, at one end of the transfer chamber 200. In this case, it is preferable to provide the acid exhaust unit 300 directly below the orienter 137.

  With this arrangement, when the processed wafer W is unloaded from the load lock chamber 150, for example, by the common transfer mechanism 160, the common transfer mechanism 160 is moved to a predetermined position at one end of the transfer chamber 200 and processed. The wafer W can be loaded into the acid exhaust unit 300 and the unprocessed wafer W can be unloaded from the orienter 137. Thereby, the working efficiency of the common transport mechanism 160 can be improved, and the throughput can be improved.

  When a wafer is processed by the substrate processing apparatus having such a configuration, the wafer W to be processed is taken out from each of the cassette containers 134A to 134C by the common transfer mechanism 160. The wafer W taken out by the common transfer mechanism 160 is transferred to the orienter 137 and transferred to the rotary mounting table 138 of the orienter 137, where it is positioned. The positioned wafer W is again received and held by the common transfer mechanism 160, and is transferred to just before the load lock chamber 150A or 150B of the vacuum processing unit 110A or 110B for processing the wafer W. When the gate valve 152A or 152B is opened, the wafer W held in the common transfer mechanism 160 is loaded from the transfer chamber 200 into the load lock chamber 150A or 150B. When the loading of the wafer W into the load lock chamber 150A or 150B is completed, the gate valve 152A or 152B is closed.

  The wafer W loaded into the load lock chamber 150A or 150B is loaded into the processing chamber 140A or 140B by the individual transfer mechanism 170A or 170B when the gate valve 144A or 144B is opened. When the loading of the wafer W into the processing chamber 140A or 140B is completed, the gate valve 144A or 144B is closed, and in the processing chamber 140A or 140B, for example, a corrosive gas is used as a processing gas, and a predetermined process such as etching is performed on the wafer W. Is processed.

  When the processing of the wafer W in the processing chamber 140A or 140B is completed and the gate valve 144A or 144B is opened, the wafer W is transferred to the load lock chamber 150A or 150B by the individual transfer mechanism 170A or 170B. When unloading of the wafer W to the load lock chamber 150A or 150B is completed, the gate valve 144A or 144B is closed, and the unloading operation of the wafer W to the transfer chamber 200 is performed. That is, in order to eliminate the pressure difference between the transfer chamber 200 in the atmospheric pressure state and the load lock chamber 150A or 150B, the gate valve 152A or 152B is opened after the atmosphere in the load lock chamber 150A or 150B is released. Opened. Then, the processed wafer W is returned from the load lock chamber 150A or 150B to the transfer chamber 200 by the common transfer mechanism 160, and the gate valve 152A or 152B is closed.

(Measures against gas adhering to processed wafers)
By the way, the processed wafer W immediately after the processing may be returned to the transfer chamber 200 from the processing chamber 140 through the load lock chamber 150 with the gas component of the processing gas adhering thereto. The following problem occurs due to the gas adhering to the processed wafer W.

For example, when the processed wafer W is transferred to the transfer chamber 200 with the gas attached thereto, the gas component of the processing gas attached to the processed wafer W enters the transfer chamber 200 together with the processed wafer W. Exhaust gas may contain such a gas component. Therefore, when a corrosive gas such as a gas containing Cl, Br or the like is used as the processing gas, if the air in the transfer chamber 200 is discharged to the outside as it is, its gas components (for example, Cl ₂ , Br ₂ , HCl, etc.) , HBr) may be exhausted while containing harmful components.

Therefore, in the present invention, an exhaust filter means for removing gas components (eg, Cl ₂ , Br ₂ , HCl, HBr) such as a gas containing Cl and Br is provided on the exhaust side of the transfer chamber 200, and the exhaust from the transfer chamber 200 is exhausted. It exhausts through an exhaust filter means. As a result, the components contained in the exhaust from the transfer chamber 200 are removed through the exhaust filter means, so that gas containing Cl, Br, etc. to the outside of the transfer chamber 200 (for example, a clean room in which the substrate processing apparatus 100 is installed). It is possible to prevent exhaust in a state containing the gas component.

  Further, the gas component of the processing gas adhering to the processed wafer W immediately after the processing as described above (for example, a halogen-based gas component such as a gas containing F, Br, or Cl) is combined with the surface of the processed wafer W. May form a compound. When such a compound is formed on the processed wafer W, for example, depending on the components contained in the atmosphere surrounding the processed wafer W, particles (reaction products) may be generated on the processed wafer W. .

  Here, the particles generated on the processed wafer W due to the gas component of the processing gas adhering to the processed wafer W will be described with reference to the drawings. FIG. 2 is a diagram for explaining a process in which particles are generated on the processed wafer W. FIG.

As shown in FIG. 2A, the compound A is formed by combining the gas component of the processing gas adhering to the processed wafer W and the surface of the processed wafer W. For example, when the processing gas contains a halogen-based gas component (for example, a gas component containing F, Cl, Br, etc.), these gas components are combined with, for example, SiO ₂ on the processed wafer W and processed. Compound A is formed on the finished wafer W.

  In this case, if, for example, an amine component is contained in the atmosphere surrounding the processed wafer W, the halogen compound of the compound A of the processed wafer W reacts with the amine component in the atmosphere, and FIG. As shown in (b), salt B is formed on the surface of the processed wafer W. Here, the amine component includes, for example, ammonia and amine. Examples of the amine include trimethylamine, triethylamine, and organic base amine.

A series of processes in which the salt B is formed on the surface of the processed wafer W in this way is represented by the following chemical formulas (1-1) to (1-3). Here, the surface component (SiO ₂ ) of the processed wafer W is combined with the gas component (HF) of the processing gas to form a compound (SiF ₄ ), and the compound (SiF ₄ ) is ammonia (NH ₃ ) in the atmosphere. ) To form a halogenated ammonia salt (for example, (NH ₄ ) ₂ SiF ₆ ).

SiO ₂ + 4HF → SiF ₄ + 2H ₂ O (1-1)

SiO ₂ + 4HF + 4NH ₃ → SiF ₄ + 2H ₂ O + 4NH ₃ (1-2)

SiF ₄ + 2HF + 2NH ₃ → (NH ₄ ) ₂ SiF ₆ (1-3)

When the surface component (SiO ₂ ) of the processed wafer W is combined with the gas component (HF) of the processing gas to form a compound (SiF ₄ ), the chemical formula (1-1) is generally used. It is thought that it reacts as follows.

However, in this case, if ammonia (NH ₃ ) is contained in the atmosphere, a reaction represented by the above chemical formula (1-2) is also conceivable. The reaction energy required to react from the left side to the right side in such a chemical formula (1-1) is 1.0 eV, whereas it is necessary to react from the left side to the right side in the chemical formula (1-2). The reaction energy is 0.4 eV, which is much lower than that in the chemical formula (1-1).

For this reason, when ammonia (NH ₃ ) is contained in the atmosphere, the reaction represented by the chemical formula (1-2) is more likely to proceed, so that the compound (SiF ₄ ) is easily formed on the surface of the processed wafer W. Become. Accordingly, the reaction represented by the chemical formula (1-3) is likely to proceed, so that a halogen-based ammonia salt ((NH ₄ ) ₂ SiF ₆ ) is easily formed.

As described above, when the processed wafer W to which the halogen-based gas component is attached is placed in an atmosphere containing ammonia (NH ₃ ), a halogen-based ammonia salt (for example, (NH _{4) 2} SiF ₆₎ is formed.

When the salt B such as a halogen-based ammonia salt is thus formed on the surface of the processed wafer W, the salt B on the processed wafer W is converted to moisture (H) contained in the atmosphere surrounding the processed wafer W. ₂ O) is absorbed gradually. Then, with the passage of time, particles C as shown in FIG. 2C are generated. That is, at first, small particles C that cannot be measured with an electron microscope of about 0.001 μm are generated, and the number of these particles C gradually increases as the number thereof gradually increases. For example, when about 1 hour elapses, it grows to about 0.1 μm, and when about 24 hours elapse, some grow to particles C of about 0.5 to 0.7 μm.

Then, after a few days, salt B deliquesces into moisture (H ₂ O) in the atmosphere and aggregates. When the particle C contains, for example, SiO ₂ , SiO ₂ remains as a residue D on the processed wafer W after the particle C volatilizes, as shown in FIG. If the particle C does not contain, for example, SiO ₂ , the particle C volatilizes and disappears.

  Here, for example, when a processed wafer W that has been subjected to processing such as etching with a processing gas containing an F component is left in an atmosphere that does not contain an ammonia component, and when it is left in an atmosphere that contains an ammonia component, FIG. 3 is a graph showing the relationship between the standing time and the number of particles generated on the processed wafer W.

FIG. 3A shows a case where the processed wafer W is left in an atmosphere containing no ammonia component, and FIG. 3B shows a case where the processed wafer W is left in an atmosphere containing an ammonia component. In FIG. 3, the horizontal axis represents time and the vertical axis represents the number of particles. The graph shown in FIG. 3, the processing immediately before _{t p,} the processing immediately (0 hours post) _{t 0,} after treatment 1 hour after _{t 1,} observed on the processed wafer W in 24 hours after _{t 24} after treatment such as by electron microscopy Particles having a size of 0.12 μm or more that can be measured are measured.

According to such an experimental result, when the processed wafer W is left in an atmosphere containing no ammonia component as shown in FIG. 3A, the number of particles on the processed wafer W Almost no change even after elapse. On the other hand, when the processed wafer W is left in an atmosphere containing an ammonia component as shown in FIG. 3 (b), the number of particles on the processed wafer W can be calculated as follows. It turns out that it increases with progress. In the above experiment, an example is given in which ammonia salt ((NH ₄ ) ₂ SiF ₆ ) is formed on the processed wafer W when the processing gas of the processed wafer W contains an F component. Even when other halogen components (for example, Br) are included in the processing gas of the processed wafer W, an ammonia salt (for example, (NH ₄ ) ₂ SiBr ₆ ) is formed on the processed wafer W in the same manner as described above. As a result, particles are generated on the processed wafer W.

  As described above, in the processed wafer W immediately after the processing, depending on the type of the processing gas, the gas component of the processing gas (for example, a halogen-based gas component containing F, Br, Cl) is combined with the surface of the processed wafer W. Then, a compound is formed, and the compound reacts with an amine-based component such as ammonia contained in the atmosphere to form a salt that becomes particles. For this reason, the processed wafer W immediately after processing generates particles just by leaving it in an atmosphere containing an amine-based component such as ammonia. Therefore, when the processed wafer W is transferred to the transfer chamber 200, if outside air containing an ammonia component is introduced, particles may be generated on the processed wafer W depending on the atmosphere in the transfer chamber 200. .

  Such an ammonia component is also released from, for example, the human body of a clean room worker. Therefore, if the clean room air is introduced as it is into the transfer chamber 200 as the outside air, the introduced air always contains the ammonia component. , The probability that particles are generated on the processed wafer W is high. In this case, it is conceivable to remove the ammonia component from the clean room itself by filtering the clean room itself. However, in this case, there is a problem that it takes a lot of cost to maintain the environment in the clean room.

  In particular, in recent years, due to the above-mentioned cost problems, substrate processing is not performed in a factory or a clean room, but a substrate processing such as a mini-environment system using SMIF (Standard Mechanical Interface), for example. There is a tendency to perform local cleaning such as highly cleaning only necessary parts such as in the apparatus.

  However, in the latest factory where such a mini-environment system using SMIF or the like is introduced, particles such as dust and dust are taken using local cleaning technology, but the corrosive gas described above is used. At present, no countermeasure is taken against generation of component particles such as particles derived from ammonia components.

  Therefore, in the present invention, an air supply filter means such as a chemical filter that removes amine-based components such as ammonia is provided at the air supply port of the transfer chamber 200, and outside air is introduced into the transfer chamber 200 through the air supply filter means. . As a result, the amine-based component contained in the air introduced into the transfer chamber 200 is removed by the air supply filter means, and therefore particles (for example, corrosive properties) caused by the gas component of the processing gas adhering to the processed wafer W are removed. Generation of gas component particles (for example, particles derived from an ammonia component) can be prevented.

  As described above, according to the present invention, by providing the filter means not only on the exhaust side of the transfer chamber 200 but also on the supply side, it is possible to take measures against gas adhering to the processed wafer W.

(Configuration example of transfer chamber)
Next, a configuration example of the transfer chamber according to the embodiment of the present invention will be described with reference to the drawings. 4 and 5 are sectional views showing a schematic configuration of the transfer chamber 200 according to the present embodiment. 4 is a view of the cross section of the transfer chamber 200 as viewed from the end direction, and FIG. 5 is a view of the cross section of the transfer chamber 200 as viewed from the side of the longitudinal direction (the side on which the cassette stand 132 is provided). is there. In FIG. 4, the common transport mechanism 160 is omitted, and the orienter 137 is omitted in FIG.

  As shown in the figure, the transfer chamber 200 is partitioned by a casing 210 made of, for example, stainless steel or aluminum. An air supply unit 230 for introducing air into the transfer chamber 200 is disposed on the ceiling (upper) 220 of the housing 210, and an air supply unit 230 is provided on the bottom (lower) 240 of the housing 210. An exhaust unit 250 that exhausts air introduced from the outside (outside air) to the outside of the transfer chamber 200 is provided. Thus, by disposing the exhaust unit 250 so as to face the air supply unit 230, a downflow 280 of air from the ceiling (upper part) 220 to the bottom (lower part) 240 is formed in the transfer chamber 200. The Hereinafter, the configuration of the air supply unit 230 and the exhaust unit 250 will be described in detail.

  First, the air supply unit 230 will be described. The air supply unit 230 filters an air supply fan 232 that introduces air from an air supply port 222 formed in the ceiling (upper) 220 of the casing 210, and air that is introduced from the air supply port 222 by the air supply fan 232. And an air supply filter means 234.

  Specifically, a plurality of air supply ports 222 (222A to 222C) are formed at substantially equal intervals in the longitudinal direction of the ceiling portion (upper part) 220 of the casing 210, and these air supply ports 222 (222A to 222C). A plurality of air supply fans 232 (232A to 232C) are respectively disposed immediately below the air supply. Further, an air supply filter means 234 is disposed immediately below these air supply fans 232 (232A to 232C).

  The air supply filter means 234 includes, for example, an air supply filter 236 and a frame body 238 that detachably holds the air supply filter 236. The air supply filter means 234 may be configured by attaching the air supply filter 236 directly and detachably to the housing 210 or the like.

  The air supply filter 236 is configured by an amine-based component removal filter that removes amine-based components contained in the air introduced from the air supply port 222 (222A to 222C). Here, the amine component includes, for example, ammonia and amine. Examples of the amine include trimethylamine, triethylamine, and organic base amine. The air supply filter 236 is specifically configured by a chemical filter, an activated carbon filter, or the like.

The air supply filter means 234 has a two-stage configuration of the amine-based component removal filter and a particle removal filter that removes particles (particles) such as dust and dirt contained in the outside air introduced into the transfer chamber 200. Also good. Thereby, it is possible to prevent particles such as dust and dust from entering the transfer chamber 200 together with the outside air. As a particle removal filter, for example, ULPA (Ultra
Low Penetration Air) filter.

  On the other hand, the exhaust unit 250 includes an exhaust fan 252 that exhausts air from an exhaust port 242 formed in the bottom (lower) 240 of the casing 210, and an exhaust filter unit that filters air exhausted from the exhaust port 242 by the exhaust fan 252. 254.

  Specifically, a plurality of exhaust ports 242 (242A to 242E) are formed at substantially equal intervals in the longitudinal direction of the bottom portion 240 of the casing 210, and a plurality of exhaust ports 242 (242A to 242E) are respectively provided immediately below the exhaust ports 242 (242A to 242E). Exhaust fans 252 (252A to 252E) are provided. Further, exhaust filter means 254 is disposed above the exhaust ports 242 (242A to 242E) so as to cover the exhaust ports 242 (242A to 242E).

  Each exhaust fan 252 (252A to 252E) is configured by a DC fan capable of controlling the rotation speed of the fan by controlling the rotation by a DC (direct current) motor, for example. Thereby, the air downflow 280 formed in the transfer chamber 200 can be adjusted to be linear by individually adjusting the wind speed of each exhaust fan 252 (252A to 252E). If the downflow 280 formed in the transfer chamber 200 is inclined and the flow is disturbed, for example, particles may roll up and adhere to the wafer W being transferred by the common transfer mechanism 160 in the transfer chamber 200. In the present embodiment, since the air downflow 280 can be adjusted to be linear, for example, particles can be prevented from rolling up.

  Further, the number of exhaust fans 252 (252A to 252E) is not limited to five as shown in FIG. 5, and may be four or less or six or more. Thus, by providing a plurality of exhaust fans 252 along the longitudinal direction of the transfer chamber 200, fine adjustment of the air downflow 280 in the longitudinal direction of the transfer chamber 200 is possible.

  In the present embodiment, the case where the air supply fan 232 is provided in the air supply unit 230 and the exhaust fan 252 is also provided in the exhaust unit 250 has been described, but only one of the air supply fan 232 and the exhaust fan 252 is provided. You may do it. This is because if any one of the air supply fan 232 and the exhaust fan 252 is provided, the flow of the air that is taken into the transfer chamber 200 and exhausted, for example, the downflow 280 can be generated.

  However, the air downflow 280 as described above may disturb the flow of air as it goes downward in the transfer chamber 200 only with the air supply fan 232, so that the exhaust part 250 is not used as in this embodiment. Further, by providing the exhaust fan 252, the air downflow 280 can be made more linear by applying a suction force from below.

In the exhaust section 250 shown in FIG. 5, since the exhaust fan 252 is provided below the exhaust filter means 254, the exhaust filter means 254 causes gas components such as gas containing Cl and Br (for example, Cl ₂ , Br _2). , HCl, HBr, etc.) pass through the exhaust fan 252. For this reason, since the exhaust fan 252 is not exposed to the corrosive component contained in the exhaust, it is not necessary to use a corrosion-resistant exhaust fan 252. Therefore, an inexpensive fan can be used as the exhaust fan 252. However, the exhaust unit 250 is not limited to the case as described above, and the exhaust fan 252 may be provided below the exhaust filter unit 254. In such a case, it is preferable to use a corrosion-resistant exhaust fan 252.

  The exhaust filter means 254 includes, for example, an exhaust filter 256 and a frame body 258 that detachably holds the exhaust filter 256. The frame body 258 holds the exhaust filter 256 by opening a space 260 below the exhaust filter 256. Thus, by disposing the exhaust filter 256 away from each exhaust fan 252 (252A to 252E) by the space 260, the air almost uniformly enters the entire surface of the exhaust filter 256 (256A, 256B). can do.

  Further, the frame body 258 of the exhaust filter means 254 may have a configuration in which an opening is provided at one or both ends, and the exhaust filter 256 can be slidably detached from the opening in the longitudinal direction. Thereby, the exhaust filter 256 can be easily attached to and detached from the frame body 258, so that the filter can be easily replaced.

  In this case, the exhaust filter 256 may be divided into a plurality of parts. As a result, the exhaust filter 256 can be easily slid out of the exhaust filter means 254, so that replacement is facilitated. In addition, the larger the number of exhaust filters 256, the smaller the space secured in the housing 210 for taking out the exhaust filters 256 from the exhaust filter means 254. The number of exhaust filters 256 may be divided into any number, but if the number of exhaust filters 256 is too large, it will take time to replace them.

  Therefore, the number of the exhaust filters 256 is preferably set to about two in consideration of the size of the space in the transfer chamber 200 and the labor for replacement. The exhaust filter means 254 may be configured by attaching the exhaust filter 256 to the housing 210 or the like directly and detachably.

  Note that a ladder may be attached to the upper portion of the exhaust filter means 254 so as to serve as a scaffold when an operator enters the transfer chamber 200 due to maintenance or the like.

The exhaust filter 256 is constituted by, for example, a harmful component removal filter capable of removing harmful components contained in the air exhausted from the exhaust ports 242 (242A to 242E). Examples of harmful components include gas components such as corrosive gases such as gases containing Cl and Br (for example, Cl ₂ , Br ₂ , HCl, and HBr).

  As such an exhaust filter 256, for example, a chemical filter or the like that chemically adsorbs and removes harmful components (for example, HCl, HBr, etc.) contained in the exhaust by a neutralization reaction with carbonate is applied. The process for removing, for example, HCl and HBr as harmful components by such a chemical filter is represented by the following chemical formulas (2-1) and (2-2).

2HCl + K ₂ CO ₃ + H ₂ O + CO ₂ → 2KCl + 2H ₂ CO ₃ (2-1)

2HBr + K ₂ CO ₃ + H ₂ O + CO ₂ → 2KBr + 2H ₂ CO ₃ (2-2)

  For example, HCl and HBr contained in the air passing through such a chemical filter are converted into salts such as potassium chloride (KCl) and potassium bromide (KBr) by the reactions shown in the chemical formulas (2-1) and (2-2), respectively. And then removed by adhering to the surface of the chemical filter. It should be noted that salts such as potassium chloride and potassium bromide once adhered to the chemical filter do not leave the chemical filter unless a certain amount of energy is applied, for example, heat is applied.

Here, the structure of the above chemical filter will be described with reference to the drawings. FIG. 6 is a conceptual diagram for explaining the configuration of the chemical filter, and is a view when a part of the chemical filter is viewed from above. For example, the chemical filter has a honeycomb structure as shown in FIG. In such a chemical filter, when the above chemical filter through which air downward, for example, contained in the air on the sides of each structure body constituting the honeycomb structured Cl, harmful, such as gas components of a gas containing Br By adhering the components and causing the above-described chemical reaction (for example, neutralization reaction of carbonate), harmful components such as HCl and HBr are removed from the air.

  Accordingly, in such a chemical filter, the ability to remove harmful components increases as the surface area of each structure constituting the honeycomb structure, that is, the area touched by air increases. Therefore, for example, the higher the height of the chemical filter and the thicker the thickness, the larger the area, and the greater the removal capability.

  In this respect, the height and thickness of the portion where the exhaust filter means 254 is disposed in the transfer chamber 200 are limited. Even in such a case, in order to improve the removal ability (removal efficiency) of harmful components as much as possible, the wave of each structure constituting the honeycomb structure of the chemical filter may be reduced to increase the entire area. Good. For example, FIGS. 6A and 6B are enlarged views of a chemical filter having the same thickness L. FIG. Of these, FIG. 6B shows a smaller wave of each structural body k constituting the honeycomb structure than that shown in FIG. Thus, by reducing the wave of each structural body k constituting the honeycomb structure, the entire area can be increased even with the same thickness, so that the ability to remove harmful components can be improved. it can.

  Further, the replacement time of the exhaust filter 256 of the exhaust filter means 254 is determined, for example, by measuring the endurance time by an experiment or the like, and setting the replacement time based on this, for example, a memory provided in the control unit of the substrate processing apparatus 100 Or the like in advance. Then, for example, the control unit measures the usage time of the exhaust filter 256, and when the replacement time is reached, for example, a process of displaying a display informing the replacement time on the display unit of the control unit may be performed. Good.

  Further, a life sensor for detecting the life of the exhaust filter 256 may be attached to the exhaust filter means 254. In this case, for example, the control unit monitors the life sensor, and when the life sensor detects the life of the exhaust filter 256, for example, a process for displaying a display informing the replacement time on the display unit of the control unit is performed. You may do it. Examples of such a life sensor include a sensor that detects the amount of gas components such as HCl and HBr contained in the air in the transfer chamber 200. In addition, as a life sensor, for example, a silica gel type detection sheet whose color changes according to the amount of a gas component such as HCl may be attached to, for example, the exhaust filter means 254 so that the operator can visually check it.

  In addition, the housing 210 of the transfer chamber 200 is provided between the load lock chamber 560 and the load lock chamber 560 for loading and unloading the wafer W from the cassette container 134 placed on the cassette stand 132 as shown in FIG. Thus, a loading / unloading port 214 for loading / unloading the wafer W is formed. The carry-in / out ports 212 and 214 are provided with the gate valves 136 and 564, respectively, and are configured to be airtightly openable and closable. In FIG. 4, the gate valves 136 and 564 are omitted.

  Further, the housing 210 of the transfer chamber 200 is provided with a loading / unloading port 216 for loading / unloading the wafer W into / from the acid exhaust unit 300 as a standby unit as shown in FIG. The acid exhaust unit 300 includes, for example, a substrate standby chamber 310 that temporarily waits for a processed wafer W loaded from the transfer chamber 200 and an acid exhaust unit 320 that exhausts the substrate standby chamber 310.

  The substrate standby chamber 310 is configured such that a plurality (for example, 19) of substrates can be mounted in multiple stages. Specifically, for example, the substrate standby chamber 310 includes a base plate and a plurality of (for example, four) substrates that are fixed to the base plate and have multi-stage (for example, 19 wafers) holding grooves for holding the peripheral edge of the wafer. A holding column and a rod heater as a heating member provided inside the substrate holding column are provided.

  The exhaust pipe 322 of the acid exhaust unit 320 is connected to, for example, an exhaust facility (for example, a clean room abatement facility) in a factory where the substrate processing apparatus 100 is installed. The acid exhaust unit 320 is provided with, for example, a differential pressure sensor and a variable valve for controlling exhaust. By controlling the exhaust amount with the variable valve of the acid exhaust unit 320, the exhaust amount of the acid exhaust unit 320 can be matched with the exhaust power in the exhaust facility of the factory where the substrate processing apparatus 100 is disposed, for example.

  For example, the processed wafer W returned to the transfer chamber 200 from the processing unit 110 side by the common transfer mechanism 160 is temporarily loaded into the substrate standby chamber 310 of the acid exhaust unit 300 before being returned to the cassette container 134. At this time, the processed wafer W is held on the plate holding column, heated to a predetermined temperature by the bar heater, and waited until a predetermined time elapses. As a result, the gas component of the processing gas adhering to the processed wafer W is released from the processed wafer W.

  On the other hand, in the acid exhaust unit 320, a suction force that exhausts the substrate standby chamber 310 is generated by the exhaust suction force from the exhaust equipment of the factory connected to the exhaust pipe 322. Therefore, for example, even if the gas components (for example, HCl, HBr) are released from the processed wafer W stored in the substrate standby chamber 310, the gas is exhausted to the factory exhaust facility via the acid exhaust unit 320. Is done.

  Thereafter, when a predetermined time elapses, the processed wafer W is taken out from the substrate standby chamber 310 by the common transfer mechanism 160 and returned to the cassette container 134, for example. As a result, it is possible to prevent the processed wafer W from being returned to the cassette container 134 with the gas adhering thereto. For example, the inside of the cassette container 134 or the cassette container 134 is caused by the gas component of the corrosive gas adhering to the processed wafer W. It is possible to prevent contamination of other wafers W and the like housed therein.

(Operation example of transfer chamber)
Next, an operation example of the transfer chamber 200 configured as described above will be described. When the substrate processing apparatus 100 is operated, the air supply fans 232 (232A to 232C) of the air supply unit 230 of the transfer chamber 200 and the exhaust fans 252 (252A to 252E) of the exhaust unit 250 are driven. Then, air from the outside is introduced into the transfer chamber 200 from the air supply port 222 (222A to 222C), and the introduced air is forcibly exhausted to the outside from the exhaust port 242 (242A to 242E). Thus, in the transfer chamber 200, an air downflow 280 is formed from the air supply unit 230 to the exhaust unit 250, that is, from the ceiling (upper) 220 to the bottom (lower) 240 of the casing 210 of the transfer chamber 200. The

  In this case, air from the outside (for example, a clean room in which the substrate processing apparatus 100 is installed) is introduced into the housing 210 through the air supply filter unit 234 of the air supply unit 230. For this reason, even if an amine-based component such as ammonia is contained in the air of the clean room, for example, the air from which such an amine-based component has been removed by the supply air filter means 234 is introduced into the transfer chamber 200.

  Thereby, since the atmosphere in the transfer chamber 200 does not contain an amine-based component, for example, when the processed wafer W processed in the process chamber is returned from the load lock chamber 560 to the transfer chamber 200 by the common transfer mechanism 160, It is possible to prevent generation of particles due to the gas component of the processing gas adhering to the processed wafer described above on the processed wafer.

  Further, for example, air introduced from the clean room into the transfer chamber 200 is exhausted through the exhaust filter means 254 of the exhaust unit 250 and returned to the clean room again. For this reason, for example, when the processed wafer W is returned from the load lock chamber 560 into the transfer chamber 200 by the common transfer mechanism 160, the processed wafer W is combined with the processed wafer W by the gas component of the process gas adhering to the processed wafer W. Even if a processing gas containing a harmful component such as a gas component containing Cl or Br enters the transfer chamber 200, the air from which such a harmful component has been removed by the exhaust filter means 254 is transferred to the outside of the transfer chamber 200. Exhausted. Therefore, for example, the air in the transfer chamber 200 can be prevented from being exhausted in a state where harmful components are contained in the clean room.

(Comparison with the transfer chamber that exhausts using the acid exhaust unit)
By the way, when the acid exhaust unit 300 is provided as in the substrate processing apparatus 100, all the exhaust from the transfer chamber 200 is also performed using the acid exhaust unit 320 of the acid exhaust unit 300, so It is also possible to exhaust to a detoxification facility. In this way, it is not necessary to exhaust the exhaust from the transfer chamber 200 to the clean room as in this embodiment.

  Therefore, a configuration example of the transfer chamber that exhausts using the acid exhaust unit will be described more specifically as a comparative example with the present invention. FIG. 7 shows a configuration example when the transfer chamber 200 shown in FIG. 5 is evacuated using the acid exhaust unit 300, for example. In the transfer chamber 400 shown in FIG. 7, instead of providing the exhaust part 250 as in the transfer chamber 200 shown in FIG. 5, for example, a substantially square cylindrical exhaust pipe 410 is provided at the bottom 240 of the casing 210. One of the end portions is opened and connected to the acid exhaust unit 320 of the acid exhaust unit 300.

  In the transfer chamber 400 shown in FIG. 7, instead of providing the exhaust ports 242 (242 </ b> A to 242 </ b> E) at the bottom portion 240 of the housing 210 as in the transfer chamber 200 shown in FIG. 5, the exhaust port 412 ( 412A to 412E), the air in the transfer chamber 200 is guided from the exhaust port 412 (412A to 412E) to the acid exhaust unit 320 of the acid exhaust unit 300 through the exhaust pipe 410.

In the transfer chamber 400 having such a configuration, the exhaust pipe 410 is exhausted through the acid exhaust unit 320 by the exhaust suction force from the exhaust system of the factory connected to the exhaust pipe 322 of the acid exhaust unit 320 of the acid exhaust unit 300. A suction force is generated from the mouth 412 (412A to 412E). As a result, the air in the transfer chamber 400 is sucked from the exhaust ports 412 (412A to 412E) and is exhausted through the exhaust pipe 410 to the exhaust equipment in the factory via the acid exhaust unit 320. Therefore, even if harmful components are contained in the exhaust from the transfer chamber 400, the harmful components are not discharged into the clean room.

However, since the exhaust amount from the transfer chamber 400 is much larger than the exhaust amount from the acid exhaust unit 320 of the acid exhaust unit 300, the exhaust from the transfer chamber 400 as in the transfer chamber 400 shown in FIG. Exhausting all of these to the factory exhaust equipment puts a heavy burden on the factory exhaust equipment. The amount of exhaust in the transfer chamber varies depending on the processing capability of the substrate processing apparatus. For example, if the amount of exhaust from the acid exhaust unit 320 of the acid exhaust unit 300 is 2 m ³ / min, The displacement is 11.5 m ³ / min, which is approximately six times that amount. Therefore, if all these exhaust gases (for example, 13.5 m ³ / min) are processed by the factory exhaust equipment, the burden on the factory exhaust equipment is also large.

In contrast, in the transfer chamber 200 shown in FIG. 5 according to the present embodiment, the exhaust in the transfer chamber 200 can be exhausted directly from the exhaust ports 242 (242A to 242E) formed in the bottom 240. The burden on the exhaust system of the factory can be greatly reduced. According to the above example, since the exhaust (for example, 11.5 m ³ / min) of the transfer chamber 200 can be directly exhausted from the transfer chamber 200, the acid exhaust unit 300 is exhausted to the exhaust system of the factory. Only the exhaust from the acid exhaust unit 320 (for example, 2 m ³ / min), and the burden on the exhaust system of the factory is greatly reduced.

  Moreover, in the transfer chamber 400 shown in FIG. 5, the exhaust part 250 having the exhaust filter means 254 for removing harmful components contained in the exhaust is provided at the bottom part 240 of the casing 210, so that it adheres to the processed wafer W. Even if a harmful component such as a corrosive component is contained in the exhaust from the transfer chamber 200 due to the gas component of the processing gas, it is removed by the exhaust filter means 254, so that clean air is exhausted from the transfer chamber 200. For this reason, even if the exhaust from the transfer chamber 200 directly to, for example, the clean room, the exhaust from the transfer chamber 200 does not exhaust while containing harmful components such as corrosive components, so the equipment in the clean room is corroded, for example. Can be prevented.

  In addition, since the transfer chamber 200 according to the present embodiment can perform exhaust without using the acid exhaust unit 300 as described above, the transfer chamber 200 can also be applied to the substrate processing apparatus 100 in which the acid exhaust unit 300 is not provided. It is.

  Further, the acid exhaust unit 320 of the acid exhaust unit 300 may be provided with an exhaust fan and an exhaust filter such as the exhaust unit 250 according to the present embodiment, and the acid exhaust unit 320 may be exhausted through the exhaust filter. Good. By doing so, since the exhaust from the acid exhaust unit 320 can also remove harmful components such as halogen-based components by the exhaust filter, the exhaust pipe 322 of the acid exhaust unit 320 is connected to factory exhaust equipment. For example, it can be exhausted directly into a clean room. As a result, the burden on the exhaust system of the factory can be further reduced.

  In this case, the exhaust filter may be provided on the connection side of the acid exhaust unit 320 with, for example, the substrate standby chamber 310. By doing so, air from which harmful components have been removed by the exhaust filter enters the inside of the acid exhaust unit 320, so that it is possible to eliminate the need for countermeasures against corrosion inside the acid exhaust unit 320. Accordingly, for example, inexpensive parts such as a differential pressure sensor and a variable valve provided inside the acid exhaust unit 320 can be used.

  In the present embodiment, the exhaust filter unit 254 is provided in the exhaust unit 250 and the air supply filter unit 234 is provided in the air supply unit 230. However, the present invention is not limited to this. Only the exhaust filter means 254 may be provided. By providing the exhaust filter means 254 at least in the exhaust part 250, it is possible to prevent the air containing harmful gas components such as halogen-based gas from being exhausted by the gas adhering to the processed wafer W. Because.

  However, if the air supply unit 230 is further provided with an air supply filter means 234, it is possible to prevent, for example, particles derived from the ammonia component from being generated on the processed wafer W by the gas adhering to the processed wafer W. In this manner, by combining the exhaust filter unit 254 with the supply air filter unit 234, measures against gas adhering to the processed wafer W can be taken.

(Another configuration example of the substrate processing apparatus)
Next, another configuration example of the substrate processing apparatus according to the embodiment of the present invention will be described with reference to the drawings. For example, the present invention is not limited to the substrate processing apparatus 100 shown in FIG. 1 and can be applied to various substrate processing apparatuses. FIG. 8 shows a schematic configuration of a substrate processing apparatus in which the vacuum processing unit includes a multi-chamber.

  A substrate processing apparatus 500 shown in FIG. 8 includes a vacuum processing unit 510 having a plurality of processing chambers 540 for performing various processes such as a film forming process and an etching process on a substrate, for example, a wafer W, and the vacuum processing unit 510. And a transfer unit 120 for loading and unloading the wafer W. Since the configuration of the transport unit 120 is substantially the same as that shown in FIG. 1, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

  The transfer unit 120 shown in FIG. 8 is an example in which a common transfer mechanism (atmosphere side transfer mechanism) 160 disposed in the transfer chamber 200 is configured as a single arm mechanism having one pick. The base 162 to which the common transport mechanism 160 is fixed is supported so as to be slidable on a guide rail (not shown) provided in the center of the transport chamber 200 along the length direction. Each of the base 162 and the guide rail is provided with a mover and a stator of a linear motor. A linear motor drive mechanism (not shown) for driving the linear motor is provided at the end of the guide rail. A controller (not shown) is connected to the linear motor drive mechanism. Thus, the linear motor drive mechanism is driven based on the control signal from the control unit, and the common transport mechanism 160 moves along the guide rail in the direction of the arrow together with the base 162.

In FIG. 8, for example, a vacuum processing unit 510 having six processing chambers 540 </ b> A to 540 </ b> F is provided on the side surface of the transfer unit 120 . The vacuum processing unit 510 includes a common transfer chamber 550 for carrying wafers in and out of the six process chambers 540A to 540F, and the process chambers 540A to 540F are connected to the common transfer chamber 550 via gate valves 544A to 544F, respectively. It is arranged. In the common transfer chamber 550, first and second load lock chambers 560M and 560N configured to be evacuated are provided via gate valves 554M and 554N, respectively. The first and second load lock chambers 560M and 560N are connected to the side surface of the transfer chamber 200 via gate valves 564M and 564N, respectively.

  In this manner, the common transfer chamber 550 and the six processing chambers 540A to 540F and the common transfer chamber 550 and the load lock chambers 560M and 560N can be opened and closed in an airtight manner. A cluster tool is formed so that it can communicate with the inside of the common transfer chamber 550 as necessary. Further, the first and second load lock chambers 560M and 560N and the transfer chamber 200 can be opened and closed in an airtight manner.

Each of the processing chambers 540A to 540F performs, for example, the same type of processing or different types of processing on the wafer W. Each processing chambers 540A ~ in 540 F, table 542A~542F for mounting the wafer W are provided.

  The load lock chambers 560M and 560N have a function of temporarily holding the wafer W and adjusting the pressure to pass to the next stage. The load lock chambers 560M and 560N may further include a cooling mechanism and a heating mechanism.

  In the common transfer chamber 550, for example, a transfer mechanism (vacuum-side transfer mechanism) 570 made of an articulated arm configured to be able to bend, extend, elevate, and turn is provided. The transport mechanism 570 is rotatably supported on the base 572. The base 572 is configured to be slidable on, for example, an arm mechanism 576 on a guide rail 574 disposed from the base end side to the tip end side in the common transfer chamber 550.

  According to the transport mechanism 570 configured as described above, the load lock chambers 560M and 560N and the processing chambers 540A to 540F can be accessed by sliding the transport mechanism 570 along the guide rails 574. For example, when accessing the load lock chambers 560M and 560N and the processing chambers 540A and 540F arranged to face each other, the transfer mechanism 570 is positioned along the guide rail 574 closer to the base end side of the common transfer chamber 550.

Also, when accessing the four processing chambers 540B~540E may be positioned on the distal end side toward the common transfer chamber 550 along the conveying mechanism 570 to the guide rail 574. Accordingly, it is possible to access all the load lock chambers 560M and 560N and the processing chambers 540A to 540F connected to the common transfer chamber 550 by one transfer mechanism 570. The transfer mechanism 570 has two picks so that two wafers can be handled at a time.

  Note that the configuration of the transport mechanism 570 is not limited to the above, and may be configured by two transport mechanisms. For example, a first transfer mechanism composed of an articulated arm that is configured to be able to bend, elevate, lower, and swivel is provided near the base end side of the common transfer chamber 550, and can be bent, raised, lowered, and swung near the distal end side of the common transfer chamber You may make it provide the 2nd conveyance mechanism which consists of an articulated arm comprised. Further, the number of picks of the transport mechanism 570 is not limited to two, and for example, it may have only one pick.

  The configuration shown in FIG. 5 can also be applied to the transfer chamber 200 of the substrate processing apparatus 500 shown in FIG. As a result, the substrate processing apparatus 500 of the type shown in FIG. 8 can achieve the same effects as the substrate processing apparatus 100 of the type shown in FIG.

  Note that the number of processing chambers 540 in the substrate processing apparatus 500 is not limited to six as shown in FIG. 8, but may be five or less, or may be additionally provided. Moreover, although the vacuum processing unit 510 shown in FIG. 8 demonstrated the case where there was one processing chamber unit which connected the some processing chamber around the common conveyance chamber 550, it is not necessarily limited to this, A so-called tandem type configuration in which two or more processing chamber units having a plurality of processing chambers connected around one common transfer chamber 550 are connected via a buffer chamber may be employed.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. Understood.

  For example, in the above embodiment, a case has been described in which an exhaust unit including an exhaust filter that removes harmful gas components such as halogen-based gas components contained in corrosive gas is provided in the transfer chamber of the substrate processing apparatus. However, the present invention is not necessarily limited to this, and may be applied to a load lock chamber (for example, the load lock chambers 150A and 150B shown in FIG. 1 and the load lock chambers 560M and 560N shown in FIG. 8) of the substrate processing apparatus. Good.

  In the load lock chamber provided in the substrate processing apparatus, for example, an acid exhaust unit that performs acid exhaust in the load lock chamber is provided separately from a vacuum exhaust unit that is connected to a vacuum pump or the like for performing vacuum exhaust in the load lock chamber. There is something. The acid exhaust pipe of the acid exhaust section is connected to the factory exhaust facility. In such a load lock chamber, a gas component of a processing gas (for example, a halogen-based gas such as HCl or HBr) adhering to the processed wafer and entering the load lock chamber at a predetermined timing by valve control of each exhaust pipe. The component) is exhausted (acid exhaust). Therefore, even in such a load lock chamber, by providing an exhaust portion including an exhaust filter and an exhaust fan in the acid exhaust pipe, the gas component of corrosive gas from the exhaust discharged through the acid exhaust pipe of the load lock chamber. And other harmful components can be removed. As a result, the acid exhaust pipe of the load lock chamber can be exhausted as it is without being connected to the factory exhaust equipment, so the burden on the factory exhaust equipment can be reduced.

  Moreover, although the said embodiment demonstrated the case where the air supply part provided with the air supply filter which removes amine components, such as ammonia, for example was provided in the transfer chamber of the substrate processing apparatus, it is not necessarily limited to this. Instead, it may be applied to the load lock chamber of the substrate processing apparatus.

  The load lock chamber provided in the substrate processing apparatus is provided with a communication port that communicates with outside air (for example, a clean room), for example, to release the atmosphere. For this reason, air containing amine components such as ammonia may enter the load lock chamber from the communication port. For example, the gas component of the processing gas adhering to the processed wafer in the load lock chamber enters the load lock chamber. There is a risk that ammonia or the like reacts to generate particles on the processed wafer. Therefore, even at the communication port of such a load lock chamber, the air introduced through the communication port of the load lock chamber is provided by providing an air supply unit including an air supply filter that removes amine components such as ammonia. Since the amine component is removed from the wafer, the generation of particles due to the gas component adhering to the processed wafer can be prevented.

  Moreover, the present invention can be applied to various types of substrate processing apparatuses in addition to the substrate processing apparatus according to the above-described embodiment. For example, the substrate processing apparatus may be applied to a vertical heat treatment apparatus, a coating and developing apparatus, or the like.

  The present invention is applicable to a substrate processing apparatus including a transfer chamber that introduces and exhausts outside air, a load lock chamber, and the like.

It is sectional drawing which shows the structural example of the substrate processing apparatus concerning embodiment of this invention. It is a figure for demonstrating the process in which a particle generate | occur | produces on a processed wafer. It is a figure which shows the relationship between the leaving time of a processed wafer, and the number of the particles which generate | occur | produce on a processed wafer. It is sectional drawing which shows schematic structure of a conveyance chamber, Comprising: The cross section of a conveyance chamber is seen from the edge part direction. It is sectional drawing which shows schematic structure of a conveyance chamber, Comprising: The cross section of the conveyance chamber 200 is seen from the side surface of the longitudinal direction. It is a conceptual diagram for demonstrating the structure of a chemical filter, Comprising: It is a figure at the time of seeing a part of chemical filter from upper direction. It is a figure which shows the structural example of the conveyance chamber exhausted using an acid exhaust unit. It is sectional drawing which shows the other structural example of the substrate processing apparatus which shows embodiment of this invention.

Explanation of symbols

100 Substrate processing apparatus 110 (110A, 110B) Vacuum processing unit 120 Transport unit 132 (132A to 132C) Cassette stand 134 (134A to 134C) Cassette container 136 (136A to 136C) Gate valve 137 Orienter 138 Rotation mounting table 139 Optical sensor 140 (140A, 140B) Each processing chamber 142 (142A, 142B) Mounting table 144 (144A, 144B) Gate valve 150 (150A, 150B) Load lock chamber 152 (152A, 152B) Gate valve 154 (154A, 154B) Mounted for buffer Mounting table 156 (156A, 156B) Buffer mounting table 160 Common transport mechanism (atmosphere side transport mechanism)
162 Base 170 (170A, 170B) Individual transfer mechanism 172 (172A, 172B) Pick 180 Control unit 200 Transfer chamber 210 Cases 212, 214, 216 Carry-in / out port 220 Ceiling (upper part)
222 Air supply port 230 Air supply part 232 Air supply fan 234 Air supply filter means 236 Air supply filter 238 Frame 240 Bottom (lower part)
242 Exhaust port 250 Exhaust unit 252 Exhaust fan 254 Exhaust filter means 256 Exhaust filter 258 Frame 260 Space 280 Downflow 300 Acid exhaust unit 310 Substrate standby chamber 320 Acid exhaust unit 322 Exhaust pipe 400 Transport chamber 410 Exhaust pipe 412 Exhaust port 500 Substrate Processing device 510 Vacuum processing unit 520 Transfer unit 540 (540A to 540F) Processing chamber 542 (542A to 542F) Mounting table 544 (544A to 544F) Gate valve 550 Common transfer chamber 554 (554M, 554N) Gate valve 560 (560M, 560N) ) Load lock chamber 564 (564M, 564N) Gate valve 570 Transport mechanism (vacuum side transport mechanism)
572 Base 574 Guide rail 576 Arm mechanism W Wafer

Claims (15)

A substrate processing apparatus comprising a processing unit for performing a predetermined process on a substrate to be processed, and a transfer chamber for carrying the substrate into and out of the processing unit,
The transfer chamber is
An air supply unit for introducing outside air into the room;
Provided opposite to the air supply unit, and an exhaust portion for exhausting the previous Symbol chamber,
Exhaust filter means provided in the room so as to face the air supply unit so as to cover a plurality of exhaust ports disposed in the exhaust unit, and filtering the exhaust gas and exhausting the exhaust gas from each exhaust port to the outside;
A plurality of exhaust DC fans that are respectively provided in the exhaust ports and that form a downflow from the air supply unit toward the exhaust unit in the room ;
The substrate processing apparatus , wherein the exhaust filter means is disposed such that a direction in which air to be filtered passes is in a direction of the downflow, and is separated from the exhaust DC fan . The exhaust filter means includes a plurality of structures having a honeycomb structure, and includes a harmful component removal filter that removes at least harmful components contained in the exhaust gas passing between the structures. Substrate processing equipment. The substrate processing apparatus according to claim 1, wherein the exhaust filter means is a chemical filter or an activated carbon filter. 2. The substrate processing apparatus according to claim 1, wherein the exhaust DC fan is provided on the downstream side of the exhaust with respect to the exhaust filter means. The substrate processing apparatus according to claim 1, wherein the air supply unit includes an air supply filter unit that filters outside air introduced into the transfer chamber.   6. The substrate processing apparatus according to claim 5, wherein the air supply filter means includes an amine component removal filter that removes at least an amine component contained in the outside air introduced into the transfer chamber. 6. The substrate processing apparatus according to claim 5, wherein the air supply filter means is a chemical filter or an activated carbon filter. The air supply filter means includes: an amine component removal filter that removes at least an amine component contained in the outside air introduced into the transfer chamber; and a particle removal filter that removes particles contained in the outside air introduced into the transfer chamber. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus is provided. A substrate processing apparatus comprising: a processing unit for performing a predetermined process on a substrate to be processed; and a transfer chamber for carrying the substrate into and out of the processing unit via a load lock chamber,
The load lock chamber is
An air supply unit for introducing outside air into the room;
An acid exhaust unit provided opposite to the air supply unit for exhausting the acid in the room;
Exhaust filter means provided in the room so as to face the air supply part so as to cover a plurality of exhaust ports provided in the acid exhaust part, and filtering the acid exhaust and exhausting it from the exhaust ports to the outside When,
A plurality of exhaust DC fans that are respectively provided in the exhaust ports and that form a downflow from the air supply unit toward the exhaust unit in the room ;
The substrate processing apparatus , wherein the exhaust filter means is disposed such that a direction in which air to be filtered passes is in a direction of the downflow, and is separated from the exhaust DC fan . 10. The exhaust filter means includes a plurality of structures having a honeycomb structure, and includes a harmful component removal filter that removes at least harmful components contained in the exhaust gas passing between the structures. Substrate processing equipment. The substrate processing apparatus according to claim 9, wherein the air supply unit of the load lock chamber includes an air supply filter unit that filters outside air introduced into the load lock chamber. The substrate processing apparatus according to claim 11, wherein the air supply filter unit includes an amine-based component removal filter that removes at least an amine-based component contained in outside air introduced into the load lock chamber. A standby unit connected to the transfer chamber and having a substrate standby chamber for temporarily waiting for a substrate to be processed which has been processed by the processing unit; and an acid exhaust unit for exhausting acid from the substrate standby chamber;
An exhaust filter means provided in the acid exhaust part of the standby unit for filtering the acid exhaust;
The substrate processing apparatus according to claim 1, further comprising: The substrate processing apparatus according to claim 13, wherein the exhaust filter unit includes a harmful component removal filter that removes at least a harmful component contained in the exhaust gas. A positioning device for positioning the substrate to be processed is connected to the transfer chamber,
The substrate processing apparatus according to claim 14, wherein the standby unit is disposed directly below the positioning device.

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