TW202341529A - 固晶結構及其製造方法 - Google Patents

固晶結構及其製造方法 Download PDF

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TW202341529A
TW202341529A TW112123276A TW112123276A TW202341529A TW 202341529 A TW202341529 A TW 202341529A TW 112123276 A TW112123276 A TW 112123276A TW 112123276 A TW112123276 A TW 112123276A TW 202341529 A TW202341529 A TW 202341529A
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Taiwan
Prior art keywords
energy beam
layer
bonding
target substrate
semiconductor
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TW112123276A
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English (en)
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謝明勳
廖世安
蘇英陽
劉欣茂
王子翔
蒲計志
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晶元光電股份有限公司
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Publication of TW202341529A publication Critical patent/TW202341529A/zh

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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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Abstract

本申請揭露一種固晶製程，步驟包含提供目標基板，其中目標基板包含支撐基板以及電路結構形成在支撐基板之一側，其中電路結構包含玻璃板形成在支撐基板上，透明導電層形成在玻璃板上，金屬層形成在透明導電層上，黏合增強電路層形成在金屬層上，以及複數個電接觸點形成在黏合增強電路層上；提供複數個半導體元件黏附到承載板上並且彼此間具有一間隙隔開，每個半導體元件具有一電極對與目標基板上的電路結構的兩對應的電接觸點對準；以及提供能量束產生器產生能量束，用於在加熱循環中通過由能量束攜帶的熱能，來接合和電連接其中一個半導體元件的電極對以及與其對準的電接觸點。

Description

固晶結構及其製造方法
本申請案係關於一種固晶方法及固晶結構，尤關於一種使用能量束發射設備產生能量以固晶的方法及結構。
近來發光二極體（LED）和液晶顯示器（LCD）產業裡上流行的術語之一是“局部調光”。從字義上解釋，局部調光可以使需要的屏幕區域變暗，同時使屏幕上需要明亮的部分保持明亮。這項技術可以真正提高對比度和3D色域，從而獲得更好的顯像效果。如此，液晶電視加入局部調光的技術後，在提供高清解析度的影像時，液晶電視可以與有機發光二極體（OLED）電視匹敵。
但是，為了達到局部調光的目的必須安裝大量的LED在背光模組上，此與傳統的側投式電視和直下式電視中採用的手法不同。因此，需要大尺寸的電路板來安裝此大量的LED，而從統計學上講，這樣做可能導致LED的固晶良率低落的問題。解決問題的一個對策是使用多層電路板。然而，由於多層電路板是由FR-4(Flame Retardant)或BT(Bismaleimide-Triazine)樹脂以及形成其上的銅導體所構成，在回流焊接（Reflow Soldering）後時常發生翹曲（Warppage）問題。
本申請案的一個目的是提供一種將半導體元件鍵合在目標基板上的固晶方法和結構，以解決常規回流工藝中的印刷電路板翹曲問題，並確保半導體元件與目標基板之間有較高的鍵合強度。
為了達到上述目的，固晶的方法包括以下步驟：
（a）提供其上形成有電路結構的目標基板和多個半導體元件；電路結構具有形成在其上的多個電接觸點和一玻璃板，並且每個半導體元件包括一對電極；
（b）將多個半導體元件放置在目標基板上，每個半導體元件的一對電極與目標基板的兩個對應的電接觸點對準；以及
（c）施加至少一個能量束，以在加熱週期中通過由能量束攜帶的熱能來接合和電連接至少一個半導體元件的一對電極以及與其對準的對應電接觸點。
優選地，步驟（a）還包括：
決定固晶類型，其中固晶的類型與固晶材料設置的位置以及固晶材料的數量有關。
當固晶材料包括一結合材料，且固晶材料是在步驟(a)前預先形成在目標基板之電路結構的電接觸點上，此為第一固晶類型；
當固晶材料包括一結合材料，且固晶材料是在步驟(a)前預先形成在半導體元件的一對電極上，此為第二固晶類型；
當固晶材料包括一結合材料，且在步驟(a)中，將固晶材料形成在目標基板之電路結構的電接觸點上，為第三固晶類型；
當固晶材料包括兩部份結合材料，其中一部份結合材料在步驟(a)前預先形成在半導體元件的一對電極上，另一部份結合材料在步驟(a)中形成在電接觸點上，此為第四固晶類型。
在第一固晶類型中，固晶材料在步驟(a)前預先形成在目標基板的電接觸點上；
在第二固晶類型中，固晶材料在步驟(a)前預先形成在半導體元件的一對電極上；
在第三固晶類型中，固晶材料在步驟(a)中形成在目標基板的電接觸點上；
在第四固晶類型中，固晶材料包含一第一結合材料以及一第二結合材料，第一材料在步驟(a)前預先形成在半導體元件的一對電極上，以及第二材料在步驟(a)中形成在目標基板的電接觸點上。
優選地，在第一固晶類型中，固晶材料為熔點在140℃至300℃範圍內的焊料，其包含選自錫、鈦、銦和銀群組的金屬、選自上述金屬的合金或疊層。
優選地，在第二固晶類型中，固晶材料為熔點在140℃至300℃範圍內的焊料，其包含選自錫，、鈦，、銦和銀群組的金屬中的一種金屬，、該選自上述金屬的合金選自 金屬組或堆疊層。
優選地，在第三固晶類型中，固晶材料為含有絕緣粘合劑或含有助熔劑的粘合劑，或含有選自包括錫，鈦，銦和銀的金屬中的一種的金屬顆粒之粘合劑的結合材料。
優選地，在第四固晶類型中，固晶材料中第一結合材料為錫或錫銀的金屬層，第二結合材料為助焊劑或絕緣粘合劑，例如環氧樹脂或矽樹脂。
上述固晶方法包含產生一個或多個能量束用以加熱並電連接多個半導體元件的電極對和目標基板的電路結構中與電極對相對應之電接觸點，以及將固晶材料施加到半導體元件和電路結構上的各種方式，如此可利用能量束將熱傳遞到目標基板上以達到點狀分散地加熱目標基板的優點，從而大幅地減少了在傳統回流工藝中印刷電路板的翹曲問題，並利用各種不同的方式和不同的接合材料來提高半導體元件與目標基板上電路結構之間的接合強度。
為了達到上述目的，固晶結構包括一目標基板、多個半導體元件以及一射線產生器。
目標基板具有一支撐基板以及一電路結構。
電路結構係形成在支撐基板之一側上，且具有一玻璃板、一透明導電層、一金屬層、一黏合增強電路層以及複數個電接觸點。
玻璃板係形成在支撐基板上。
透明導電層係形成在玻璃板上。
金屬層係形成在透明導電層上。
黏合增強電路層係形成在金屬層上。
複數個電接觸點係形成在黏合增強電路層上。
複數個半導體元件被固定到一承載板上且彼此之間具有一間隙隔開。 每個半導體元件具有一對電極與目標基板的電路結構的兩個對應的電接觸點對準。
在一加熱循環中，射線產生器產生至少一個能量束，藉由其所攜帶的熱能來接合和電連接至少一個半導體元件的電極以及與其對準的對應電接觸點。
上述的固晶結構中，射線產生器產生至少一個能量束並用以加熱並電連接多個半導體元件以及目標基板的電路結構，能量束可攜帶熱能均勻地分佈在目標基板上以達到點狀散佈的加熱模式，解決了印刷電路板翹曲的問題，並對於半導體元件和目標基板的電路結構之間提供更高的接合強度，因為針對傳統的玻璃上的晶片(chip on glass)電路、各種固晶材料以及各種施加固晶材料方法的缺點，可定制電路的設計以提高目標基板與半導體元件之間固晶結構的接合強度。
後續實施方式結合圖式，將進一步地說明本申請案的其他目的、優點以及新穎的特徵。
第1圖係根據本發明第一實施例之使用能量束製作之固晶結構的固晶製程示意圖，包括一目標基板10、一多個半導體元件20和一能量束產生器50。
目標基板10具有一支撐基座30和一電路結構40。支撐基座30對於能量束為透明，可以由玻璃環氧樹脂層壓材料，例如FR4和BT（Bismaleimide Triazine）印刷電路板（PCB），或玻璃基板製成。 電路結構40形成在支撐基座30的一側上並且具有多個電接觸點40a。目標基板10包含印刷電路板(例如柔性印刷電路板)、玻璃電路板或具有薄膜電晶體（TFT）電路或脈衝寬度調頻（PWM）驅動電路的背板。
多個半導體元件20以矩陣的形式附接到一載體板70上，並且相鄰的半導體元件20之間彼此以一間隙隔開。每一個半導體元件20具有一電極對21，其中電極對21包含至少兩電極。間隙可以包括水平間距和垂直間距。換句話說，多個半導體元件20可以分別以水平間距和垂直間距以水平和垂直間隔放置，每個半導體元件20的電極對21與目標基板10上的各個電觸點40a對準。半導體元件20包括一發光二極體（LED）具有一對電極21和一發光疊層22，其中發光二極體可以具有一成長基板或一黏接合基板用以支撐發光疊層22。
能量束產生器50產生至少一個能量束51，當每個半導體元件20的電極對21與目標基板10上對應的電接觸點40a對準後，在一加熱週期中，半導體元件20的電極對21和相應的電接觸點40a被能量束51提供的熱能加熱直到接合並且電連接為止。
根據加熱和製造狀況，能量束產生器50可以放置在與半導體元件20同一側上並且緊鄰半導體元件20，或者可以放置在與目標基板10同一側上並且緊鄰支撐基座30。如圖1所示，當將能量束產生器50放置在多個半導體元件20的旁邊時，在一加熱週期中，能量束51攜帶的熱能首先傳到其中一個半導體元件20後，然後再傳到半導體元件20的電極對21以及與其對應之電接觸點40a之間的接合處。在部份情況下，集成電路（IC）晶片已經預先被接合到目標基板10的支撐基座30上且位於具有電路結構40相對側的表面上；在這種情況下，當將半導體元件20接合在目標基板10的電路結構40上，係藉由傳統的回流焊接來完成時，集成電路（IC）晶片和目標基板10之間的結合強度可能會因為回流焊接製程而變弱，而且在某些情況下需要重複多次的回流焊接，使得結合強度會變得更糟。與傳統的回流焊接製程中的將目標基板10整面加熱不同，本申請所揭露之由能量束51完成的固晶加熱製程係提供矩陣分佈的加熱點，僅有輕微的熱會影響集成電路（IC）晶片和目標基板10之間鍵合，尤其當能量束51係與半導體元件20位於同一側時，每個能量束51提供的大部分熱能都會被相應的半導體元件20和目標基板10所吸收。
能量束51攜帶的部份熱能被相應半導體元件20吸收。如第2圖所示，當將能量束產生器50放置於緊鄰目標基板10與支撐基座30同一側時，如果支撐基座30對能量束51是透明的，除非被支撐基座30折射，否則在加熱週期中產生大部分的能量束51會穿過目標基板10的支撐基座30，然後將熱能傳播到對應的半導體元件20的電極對21以及相應之電路結構40的電接觸點40a。因為目標基板10的支撐基座30對於能量束51是透明的，意即支撐基座30不會吸收能量束51的能量，除了一小部分的能量束51被折射轉向而未照射在目標的電極對21和電接觸點40a上，其餘大部分的被能量束51會照射到目標的電極對21和電接觸點40a上，從而將熱能傳遞到目標的電極對21和電接觸點40a。因此，當將能量束產生器50放置於緊鄰目標基板10與支撐基座30同一側時，由於目標基板10對能量束51的低吸收率可以有效率地將熱能傳遞到目標的電極對21和電接觸點40a上，得以縮短加熱週期並提高固晶製程的效率。 此外，由於熱能沒有流過半導體元件20中除了電極對21以外的部分，所以可以減輕由於能量束51的加熱作用而對半導體元件20的影響。
關於能量束51的數量和照射方式，如第1圖所示的實施例，由能量束產生器50產生的一個能量束51進行加熱的製程，在加熱週期中，能量束51一次通過一個導體元件20，依序地將每一半導體元件20的電極對21與目標基板10上對應的電接觸點40a加熱並電連接。在另一實施例中，參考第3圖，由能量束產生器50產生一個能量束51，在加熱週期中，一個能量束51一次通過至少兩個半導體元件20，將此兩個半導體元件20的電極對21與目標基板10上相應的電接觸點40a加熱並電連接。在另一個實施例中，參考第4圖，在加熱週期中，由能量束產生器50產生的至少兩個能量束51，分別施加在至少兩個半導體元件20上，以分別加熱和電連接至少兩個半導體元件20的電極對21和目標基板10上對應的電接觸點40a。上述實施例中提到的加熱週期的持續時間，介於0.001秒至1秒的範圍內。上述能量束51的類型包含紫外（UV）雷射光束、可見光雷射光束和紅外（IR）雷射光束之一的雷射光束。當能量束51為紅外雷射光束時，其波長介於1,000奈米(nm)至2,000奈米(nm)的範圍內。在另一實施例中，由能量束產生器50產生的至少兩個能量束51可同時施加在同一個半導體元件20上(圖未示)，以縮短加熱的週期，或使用較低能量的能量束51以降低加熱過程中對半導體元件20所引發的衝擊。
在繼續以下實施例之前，預先定義後續使用特定術語的意義。 “預形成固晶材料在電接觸點40a或電極對21之上”，表示在目標基板10或相應的半導體元件20的製造過程中，固晶材料是預先形成在目標基板10或相應的半導體元件20上的。“在電接觸點40a上施加固晶材料”，表示在目標基板10與多個半導體元件20對準之前，將固晶材料施加到目標基板10的電接觸點40a上。為了提高接合強度並在製造中便於將半導體元件20接合至目標基板10，可採用多種類型的固晶材料及其施加方式，並將其施加至目標基板10、半導體元件20以及目標基板10的多個電接觸點40a與半導體元件20的相應電極對21之間。
在一實施例中，參照第5圖和第5A圖，焊料80A預先形成在每個半導體元件20的電極對21上或在電路結構40的每個電接觸點40a上，其中焊料80A的熔點在140℃至300℃的範圍內並且包括錫、鈦、銦、銀、或上述金屬之合金或疊層。
在一實施例中，參照第6圖和第6A圖，將包含絕緣粘合劑和選自包括錫、鈦、銦、銀之中的一種的金屬顆粒80P的粘合劑80C施加至電路結構40的每一個電接觸點40a。絕緣粘合劑，例如環氧樹脂和矽樹脂之類的膠材，將半導體元件20牢固地形成在目標基板10上，並有助於將固晶材料輕易地散佈在電極對21與相應電接觸點40a之間的接合處，並通過加熱半導體元件20，使得粘合劑80C中的金屬顆粒80P能夠聚集並在電極對21和對應的電接觸點40a之間形成電連接通道81。
在另一實施例中，如第7圖和第7A圖所示，在每個半導體元件20的電極對21上預先形成包含錫或錫銀的金屬層80E，並且將粘合劑80F，例如環氧樹脂或矽樹脂，施加到目標基板10的電接觸點40a上。然後，將電極對21與相應的電觸點40a對準。在此實施例中，粘合劑80F更包括助焊劑，助焊劑用於潤濕和清潔金屬層80E，並保護金屬層80E免於氧化。在此實施例揭露之固晶製程的最後，助焊劑蒸發，剩下的是粘合劑80F中的環氧樹脂或矽樹脂以及金屬層80E，由於能量束51攜帶的熱能使金屬層80E熔化，當金屬層80E處於熔化狀態時會接觸到相應的電接觸點40a，並在電極對21和相應的電接觸點40a之間形成電連接通道81。
當施加粘合劑80F後，能量束51照射半導體元件20時，金屬層80E開始熔化並且自動聚集在相應的電極對21和電觸點40a之間並建立起電連接通道81。然後，由能量束51攜帶的熱能再被傳遞到粘合劑80F以使其固化，而此時電連接通道81在粘合劑80F固化之前已經形成。若是改為使用傳統的回流焊爐進行加熱時，由於粘合劑80F在回流焊爐的加熱過程中被持續加熱，因此在金屬層80E所形成的電連接通道81完整成型前，粘合劑80F中的環氧樹脂或矽樹脂早已固化。但是，這樣的不完全成型的電連接通道81可能導致不希望遇到的開路問題。上述實施例中所揭露之形成電連接通道81的模式，可以適用於第6圖和第6A圖所揭露含有金屬顆粒80P的粘合劑80C的實施例。粘合劑80C在被能量束51加熱之後，在粘合劑80C中的絕緣粘合劑完全固化之前，粘合劑80C中的金屬顆粒80P自動在相應的電極對21和電接觸點40a之間建立好電連接通道81。由於粘合劑80C與粘合劑80F的固化時間晚於電連接通道81完全成型的時間，因此本申請中所揭露用能量束51加熱固晶材料的方式，可確保電連接通道81的成功率或固晶製程的成功率高於使用傳統回流焊爐的加熱方式。
玻璃基板晶片接合 (Chip on Glass, COG)電路常見於薄膜電晶體液晶顯示器(TFT-LCD)與主動矩陣有機發光二極體(AMOLED)顯示器中。COG電路係採用玻璃板作為基板，然後在其上建構電路。習知的COG電路具有以下優點：卓越而簡潔的設計可形成極高密度組件電路；無焊點因此具有更高的可靠性；玻璃基板及其電路具有良好的散熱性能；可發展不同高度的精細圖案，在製作處理高速和高頻信號的電路時比習知的多層印刷電路板，例如HDI(high density interconnections)載板及BT(Bismaleimide Triazine)板，更簡單、更便宜，因為多層印刷電路板需要昂貴的金屬疊層。上述優點使COG電路技術非常適合製造涉及微型互連、精細導線圖案、薄型化設計及低成本的電路板。通常，在市場上可獲得的COG電路板，其玻璃板表面上形成的電路結構通常包括透明導電層，例如氧化銦錫(ITO)以及形成在ITO上的金屬層。由於並非所有金屬都適合形成在ITO上，因此，傳統上，在ITO上形成的金屬層可以選擇性地由鉬(Mo)、鋁(Al)或鋁釹(AlNd)形成。然而，上述金屬所形成的金屬層具有以下缺點：在回流焊製程或共晶接合製中，難以將LED晶片牢固地接合在其上，因為包含鉬或鋁的金屬層和LED晶片的電極材料很難形成共晶化合物。因此，為了克服上述缺點並增加LED晶片與前述COG電路板上電路結構的金屬層之間的結合強度，上述電路結構40可採用結合增強電路層，結合增強電路層係進一步形成在前述COG電路板上傳統金屬層之上作為界面層，與鉬(Mo)、鋁(Al)或鋁釹(AlNd)形成的金屬層和LED晶片的電極之間均具有較佳的結合強度，以增進LED晶片與前述COG電路結構的金屬層之間的結合強度。在以下實施例中，更詳細地描述了具有結合增強電路層的電路結構40。
第8圖顯示第1圖中的目標基板10上電路結構40的一實施例，電路結構40包括玻璃板41、透明導電層42、金屬層43、結合層44和共金層45。在本實施例中，習知的部分包括玻璃板41、透明導電層42和金屬層43，結合增強電路層包括結合層44和共金層45。透明導電層42形成在玻璃板41上，並且係由銦錫氧化物（ITO）、銦鋅氧化物（IZO）或銦鎵鋅氧化物（IGZO）形成。金屬層43由鉬(Mo)、鋁(Al)或鋁釹(AlNd)形成，並形成在透明導電層42上。金屬層43由鉬、鋁或鋁釹（AlNd）形成，並形成在透明導電層42上。接合層44由鈦、氮化鈦、氮化鈦和鈦的疊層，或者依次堆疊的氮化鈦、鈦和氮化鈦的疊層所形成。共金層45包含銅或金，並且形成在結合層44上。為了加強金屬層43和設置在其上的半導體元件20(例如LED)的電極對之間的結合強度，包含結合層44和共金層45的結合增強電路層位於金屬層43和半導體元件20的電極對21之間，作為金屬層43和半導體元件20的電極對21之間的鍵合界面以達到預期的鍵合強度。基本上，結合層44作為金屬層43與共金層45之間的結合界面，讓金屬層43與共金層45之間達到預期的結合強度。同樣地，為了促進半導體元件20(例如LED)的電極對21產生共晶混合物，共金層45作為結合層44與半導體元件20的電極對21之間的結合界面，並讓結合層44和半導體層20的電極對21之間達到預期的結合強度。
參考第9圖，第9圖所示之第1圖中的目標基板10上電路結構40的另一實施例與前述第8圖所示的實施例不同之處在於，還多了輔助結合層46和濕潤層47。在本實施例中，除了第8圖所示實施例的部分外，結合增強電路層還包括輔助結合層46和濕潤層47。輔助結合層46形成在共金層45上，包括鈦、氮化鈦、彼此堆疊的氮化鈦和鈦疊層，或者依次相繼堆疊的氮化鈦、鈦和氮化鈦疊層。濕潤層47形成在輔助接合層46上並且由金或銀形成。在本實施例中提供的輔助接合層46和濕潤層47，使得電路結構40和半導體元件20的電極對21之間的接合強度高於前述第8圖所示實施例中的接合強度。本實施例的另一個優點是，在濕潤層47中使用的金屬例如金或銀具有比銅更低的共晶溫度，以縮短的固晶製程的時間並確保高的固晶結構強度。然而，不管前述第8圖的實施例和本實施例的結構有何差異，前述第8圖實施例的電路結構40的共金層45以及本實施例中的共金層45和濕潤層47都需具備一定的厚度。如果第8圖實施例的結構要擁有與本實施例的濕潤層47和半導體元件20的電極對21之間相似的結合強度，則共金層45可以選擇使用貴金屬(例如金)，但貴金屬所需的厚度較厚將造成此實施例的成本效益較低。可替代地，本實施例提供了濕潤層47在最佳厚度的範圍中選擇使用貴金屬種類的彈性，同時在共晶層45中使用諸如銅等較便宜的材料，將電路結構40的厚度保持在所需的厚度範圍內。就成本效益和固晶強度兩者權衡而言，本實施例在不減低固晶強度的情況下滿足了成本效益。
參考第10圖，第10圖顯示第1圖中的目標基板10上電路結構40的另一實施例，本實施例與前述第8圖所示的實施例不同之處在於，共金層46被第一複合層48代替，第一複合層48形成在結合層44上以充當共金層和金屬阻擋層，並且由鈦/鋁/鈦/鋁/鎳/鉑/金等金屬層依次堆疊而成。在本實施例中，除了結合增強電路層包括結合層44和第一複合層48以外，其他部份與前述第8圖所示之實施例的結構相同。第一複合層48作為電路結構40的一部分，多個電觸點40a形成在第一複合層48上。
參考第11圖，第11圖顯示第1圖中的目標基板10的電路結構40的另一實施例，本實施例的電路結構40包括玻璃板41、透明導電層42和第二複合層49。在本實施例中，電路結構40包括玻璃板41和透明導電層42，並且結合增強電路層包括第二複合層49。透明導電層42形成在玻璃板41上。第二複合層49形成在透明導電層42上，並且由鉻/鋁/鈦/鋁/鎳/鉑/金等金屬層依次堆疊而成。第二複合層49作為電路結構40的一部分，多個電觸點40a形成在第二複合層49上。
參考第12圖，第12圖顯示第1圖中的目標基板10的電路結構40的另一實施例，本實施例的電路結構40包括玻璃板41、透明導電層42、第一增強電路層43'、絕緣層44'以及第二增強電路層45'。透明導電層42形成在玻璃板41上，並用作玻璃板41和第一增強電路層43'之間的粘合層。第一增強電路層43'形成在透明導電層42上。絕緣層44'形成在第一增強電路層43'上，並且包含穿過絕緣層44'的多個通孔441。在絕緣層44'上形成第二增強電路層45'。第二增強電路層45'通過絕緣層44'的多個通孔441電連接到第一增強電路層43'。本實施例中，目標基板10具有兩個增強電路層堆疊的電路結構與市場上多層印刷電路板類似，具有相同功能。
參考第13圖，第13圖顯示第1圖中的目標基板10的電路結構40的另一實施例，本實施例是前述第12圖顯示之實施例的變型，差異在於本實施例的結構不具有透明導電層42。透明導電層42是非必要的部份，因為透明導電層42的目的僅用於當作粘合層，用以粘合玻璃板和與其相鄰的金屬層。其他具有類似功能的黏合材料，皆可以被用作替代透明導電層42的替代物。
第12圖和第13圖中的第一增強電路層43'和第二增強電路層45'的結構可以包括第8圖中去除金屬層43的結構中的結合層44和共金層45；可以包括第9圖中去除金屬層43的結構中的結合層44、共金層45、輔助接合層46以及濕潤層47；在第10圖中去除金屬層43的結構中的結合層44和第一複合層48；以及在第11圖結構中的第二複合層49。此外，當將上述具有玻璃板41的電路結構40應用於背光源時，由於考慮到背光源的發光效率，需要將一反射層結合到目標基板10中用以反射由多個半導體元件，例如LEDs，產生的光。參照第14圖，第14圖顯示第1圖中的目標基板10的電路結構40的另一實施例，與前述相關實施方式的不同之處在於，目標基板10還具有一背面反射器60位於在支撐基座30與電路結構40之間。假設支撐基座30包括玻璃板，則背面反射器60不需要在其中具有一玻璃板。
與背面反射器60有關的一實施例中，參考第15圖，背面反射器60包括反射層62和絕緣介電層64。形成反射層62的方式包含在支撐基座30上沉積鋁，反射層62僅用於反射照射到其上的光而不具導電的功能。藉由在反射層62上沉積二氧化矽，在反射層62上形成絕緣介電層64。電路結構40形成在絕緣介電層64上。應當理解，絕緣介電層64位於反射層62和目標基板10的電路結構40之間，將反射層62與目標基板10的電路結構40電絕緣隔離。
參照第16圖，在與背面反射器60有關的另一實施例中，本實施例與前述第15圖顯示的實施例不同在附加一保護膜63。當絕緣介電層64直接形成在反射層62上時，絕緣介電層64可能會包含多個孔洞。由於絕緣介電層64具有多孔性，電路結構40可能會藉由絕緣介電層64的孔洞和反射層62電連接而發生短路的問題。為了解決短路問題，使用保護膜63當作絕緣層以使反射層62與電路結構40互連隔離，並避免電路結構40與反射層62之間互連電連接而發生短路。其中，使用爐管對反射層62的頂部進行氧化製程或氮化製程來形成保護膜63，因此保護膜63的材料為金屬氧化物或金屬氮化物以防止短路的發生。然後，藉由在保護膜63上沉積二氧化矽形成絕緣介電層64。接著，在絕緣介電層64上形成電路結構40。
為了解決一般回流焊製程中出現的電路板翹曲問題，上述的固晶結構實施例中，讓半導體元件20的電極對21與目標基板10上的電路結構40的電觸點40a之間對準後，利用能量束產生器50產生至少一個能量束51，用以加熱和電連接半導體元件20的電極對21和目標基板10的電接觸點40a。在複數個半導體元件20的電極對21與目標基板10上各個電接觸點40a對準好之後，因為目標基板10上的被能量束51照射而黏合的電接觸點40a是目標基板10的一小部分，所以本發明中的能量束51的加熱圖案僅包括一小部分分散的加熱點，不像在一般回流焊製程中那樣，將整個目標基板10放置在烤箱中整體一起加熱。與一般回流焊製程相比，本發明中的目標基板10由於這種點分散加熱點模式而吸收較少的熱能，這有效地避免了在某些區域上的過度集中的熱應力，從而引起翹曲的問題。此外，關於接合材料的類型和玻璃上TFT-LCD/AMOLED電路結構的選擇，兩者的目標均在半導體元件20與目標基板10之間提供更高的接合強度。
參照第17圖，本發明的固晶方法包括以下步驟。
步驟S101：提供一目標基板10具有一電路結構40形成在上面，以及多個半導體元件20，其中，電路結構40具有多個電觸點40a形成在其上，每個半導體元件20包括一電極對21。每一個半導體元件20可以包括但不限於一對電極和多個發光層的發光二極管（LED）彼此堆疊。目標基板10可以包括但不限於印刷電路板(PCB)、柔性印刷電路板、玻璃電路板和具有薄膜晶體體(TFT)電路或脈衝寬度調製(PWM)驅動電路底板中。
步驟S102：將多個半導體元件20佈置在目標基板10上，每個半導體元件20的電極對21與目標基板10的兩個對應的電觸點40a對準。
步驟S103：施加由能量束產生器50產生的能量束51，以將多個半導體元件20中的電極對21和與其對準的對應電觸點40a接合並電連接。在加熱循環中，藉由能量束51所攜帶的熱能進行加熱，直到所有半導體元件20的電極對21和與之對準的目標基板10相對應的電接觸點40a被加熱並電連接。
說到由能量束產生器50產生能量束51的數量，可包括如第1圖所示的一個能量束51，在一加熱循環中，其被施加用以加熱並電連接一個半導體元件20之電極對21與目標基板10的兩個相對應的電接觸點40a；或如第3圖所示，在一加熱週期中，一個能量束51被施加用以加熱並電連接多個半導體元件20的電極對21和目標基板10上對應的電接觸點40a。替代地，如第4圖所示，至少兩個能量束51在一加熱週期中，被分別施加以加熱和電連接至少兩個半導體元件20的電極對21和相應目標基板10上的電接觸點40a。上述加熱週期均在0.01秒至1秒的範圍內。
關於至能量束51的類型，能量束51可以是紫外(UV)光，可見光和紅外(IR)光其中之一的雷射光束。當至能量束51是IR雷射光束時，IR雷射光束的波長在1,000nm至2,000nm的範圍內。
此外，根據能量束產生器50的放置位置，在步驟S103中，如第1圖所示，當能量束產生器50緊鄰多個半導體元件20放置時，一個能量束51在加熱循環中攜帶熱能通過至少一個半導體元件20傳遞到一電極對21以及與其對準的相應電接觸點40a；如第2圖所示，當將能量束產生器50放置在目標基板10旁邊時，由一個能量束51在加熱循環中，穿過目標基板10將熱能傳遞到每至少一個半導體元件20的電極對21和相應的電接觸點40a。如前所述，將能量束產生器50放置在與目標基板10相同側的好處，包括由於加熱週期較短，因此製造效率更高，及對半導體元件20的影響較小。
參照第1、18A和18B圖，步驟S101還包括以下步驟，確定固晶類型並執行前述固晶材料的佈置及相對應的動作，以增強黏著強度，在步驟102中在半導體元件20和目標基板10的電觸點40a之間對準之前，將一開始裝載在膠帶90上的多個半導體元件20 移到載體板70上做準備。接下來，首先確定固晶類型以及固晶製程以將固晶材料預先準備並施加在預定的位置上。當為第一固晶類型時，表示固晶材料只有一種，並且固晶材料在目標基板10的製造過程中預先形成在目標基板10上電路結構40的電接觸點40a上；當為第二固晶類型時，表示固晶材料只有一種，並且在半導體元件20的製造過程中，固晶材料預先形成在半導體元件20的電極對21上；當為第三固晶類型時，表示固晶材料只有一種，並將固晶材料施加至目標基板10上電路結構40的電接觸點40a；當為第四固晶類型時，具有兩種固晶材料，其中一種固晶材料預先形成在半導體元件20的電極對21上，另一種固晶材料在電極對21與相應的電接觸點40a對準之前，施加在目標基板10上電路結構40的電觸點40a。在步驟S101中，將從步驟S1010，S1011以及S10111至S10113開始準備目標基板10和多個半導體元件40，以將相關的接合材料預形成在目標基板10和多個半導體元件40的對應位置上。在步驟S101中，將從步驟S1010、S1011以及S10111至S10113開始，準備目標基板10和多個半導體元件20，以將相關的固晶材料預形成在目標基板10及多個半導體元件20的對應位置上。
步驟S1010：確定固晶類型是為第三類。如果結果為肯定，則執行步驟S1012。 否則，執行步驟S1011。
步驟S1011：確定固晶類型的編號。 當固晶類型為第一、第二和第四類時，分別執行步驟S10111，S10112和S10113。
步驟S10111：在目標基板10上每個電接觸點40a上預形成固晶材料。固晶材料可以是如第5圖和第5A圖所示的焊料80A。
步驟S10112：在每個半導體元件20的電極對21上預先形成固晶材料。固晶材料可以是如第5圖和第5A圖所示的焊料80A。
步驟S10113：在每個半導體元件20的電極對21上預先形成第一固晶材料。第一固晶材料可以是錫或錫銀的金屬層80E，其塗覆在每一個半導體元件20的電極對21上，如如第7圖和第7A圖所示。
步驟S1012：將一部分的半導體元件20固定到膠帶90上。膠帶90可以是藍膜，但不限於此。
步驟S1013：暫時地將這部份的半導體元件20以一間距放置在承載板70上，以使多個半導體元件20的電極對21相對應於目標基板10的電接觸點40a。承載板70可以是紫外線(UV)膠帶、熱解離膠帶和藍膜中的一種，但不限於此，並且在其一側上粘附此部份多個半導體元件20。這一側表面的粘性會因紫外線照射或加熱而降低。
步驟S1014：使部份的半導體元件20和承載板70整體上下顛倒，使這部份的半導體元件20的電極對面對目標基板10的各個電觸點40a。
為了進一步提高多個半導體元件20與目標基板10之間的接合強度，步驟S101還包括以下步驟，用於根據固晶類型將對應的固晶材料施加到多個半導體元件20與目標基板10上。
步驟S1015：確定固晶的類型。當固晶類型為第三或第四時，請執行步驟S10151或S10152。
步驟S10151：將固晶材料施加到目標基板10的每個電接觸點40a。固晶材料可以是助焊劑，含粘合劑的助焊劑或粘合劑80C，如第6圖和第6A圖所示。
步驟S10152：將第二固晶材料施加到目標基板10的每個電接觸點40a上。第二固晶材料可以是包括錫、鈦、銦和銀的金屬中選出的金屬顆粒(未示出)的助熔劑80F的粘合劑，或不包含金屬顆粒的粘合劑80F(未示出)，如第7和7A圖所示。
步驟S102：將多個半導體元件20佈置在目標基板10上。
假設多個半導體元件20是發光元件，例如LED，為確保由LED提供的均勻照明，則LED的發光表面，即LED的頂表面，需要彼此齊平。
此外，在將紅色，綠色和藍色LED黏著時，由於結構不同，當紅色LED被能量束51加熱時，當紅色、綠色和藍色LED同時受到相同的加熱條件下，紅色LED比綠色和藍色LED更容易燒毀。由於紅色，綠色和藍色為三種原色，因此紅色，綠色和藍色LED都是用於產生彩色光的照明設備所必需的發光元件。 因此，提供以下實施例以解決在固晶製程的過程中同時加熱紅色，綠色和藍色LED期間紅色LED的燒壞問題。
在一實施例中，在將紅色，綠色和藍色LED黏著時，可以在第一加熱週期中，將具有第一能量水平的能量束傳遞到紅色LED，在第二加熱週期中，將具有第二能量水平的能量束傳遞到綠色跟藍色LED。就能量束提供熱能力的程度而言，第一能量水平低於第二能量水平。同時，第一加熱週期長於第二加熱週期。因此，施加到綠色和藍色LED之能量束的能量水平較高，意味著綠色和藍色LED的耐熱性比紅色LED高，對於紅色LED較長的第一加熱週期是為了補償由於能量束的第一能量水平較低而單位時間內提供的熱能不足。作為本實施例的非限制性示例，照射紅色LED的能量束51的能量水平可以為1，照射綠色和藍色LED的能量束51的能量水平可以為5。水平5高於水平1，綠色和藍色LED具有更高的耐熱性。照射紅色LED的第一加熱週期可以是8毫秒，照射綠色和藍色LED的第二加熱週期可以是2毫秒。因為這種方法涉及由一個能量束51提供兩種不同的能量水平，所以對於綠色和藍色LED以及對於紅色LED的固晶加熱過程中，在同一個能量束51的照射且在不同能量水平下的固晶加熱過程，需要分為兩個不同的加熱過程，意思是加熱多組紅色、綠色跟藍色LED時，先以兩個加熱過程之一加熱其中一組裡的紅色LED以及以另一個加熱過程加熱綠色和藍色LED之後，再換到另一組以兩個加熱過程進行加熱固晶製程。
在另一實施例中，對於固晶黏合紅色、綠色和藍色LED時，施加同一個能量束51的同一個能級到紅色、綠色和藍色LED，且加熱紅色、綠色和藍色LED的是同一個加熱週期。由於紅色LED的耐熱性較低，比較容易被能量束51燒毀，能量束51施加在紅色、綠色和藍色LED上的能量水平以紅色LED可以承受的程度所決定。因此，為避免避免紅色LED被燒毀的狀況，選擇了較低能量水平的能量束51。但為了以較低能量水平的能量束51加熱，需要更長的加熱週期，以在固晶過程中允許足夠的熱能傳遞到所有LED，特別是綠色和藍色LED。舉例來說，用於紅色，綠色和藍色LED的能量束51，其能量水平可以是等級1，這是由紅色LED決定的相對較低的能量水平，然後紅色、綠色和藍色LED的加熱週期可以為8毫秒，目的在於延長加熱週期，以便在固晶過程中將足夠的熱能傳遞給所有LED，尤其是綠色和藍色LED。儘管加熱週期更長，但是本實施例不需要如前一實施例中那樣具有兩個不同的加熱過程，因此簡化了固晶製程。與前一實施例相反，所有紅色LED以及所有綠色LED和藍色LED可以在整個固晶製程中，通過單個加熱製程以單一個能量水平同時施加。
為了達到上述目的，在完成步驟S102之後，參考第19圖，在步驟S103中，將多個半導體元件20佈置在目標基板10上，並執行如下所示的子步驟S1031和S1032。
步驟S1031：施加壓力以作用在多個半導體元件20和與其對準的相應電接觸點40a上；或者同時均勻地在承載板70上施加壓力以分別作用於每個半導體元件20上；或者在加熱週期中，同時施以壓力作用於多個半導體元件20和與其對準的相應電接觸點40a上。
步驟S1032：當半導體元件40為紅色、綠色和藍色LED時，在第一加熱週期中將具有第一能量水平的能量束51施加到紅色LED，在第二加熱週期中將具有相對於第一能量水平的第二能量水平的能量束51施加到綠色和藍色LED，其中第一能量水平低於第二能量水平且在第一加熱週期中不會燒壞紅色LED，此外第一加熱週期長於第二加熱週期；或者將同一能量水平以及同一加熱週期的能量束51施加到所有紅色、綠色和藍色LED，其中能量水平和加熱週期設定為避免燒毀紅色LED。藉由改進紅色、綠色和藍色LED的設計並調整能量束的焦距，可以實現所有紅色、綠色和藍色LED接受相同能量水平的能量束。
第20A～20E圖顯示根據本發明一實施例將初始裝載在膠帶90上的多個半導體元件20轉移到載體板70的步驟。如第20A圖所示，在多個半導體元件20的正上方配置有壓模11和黏著膠層13。壓模11具有多個突出部12，突出部12位於黏著膠層13的下方/後方，分佈的位置與多個被選的半導體元件20的位置以及占據區域相對應。換句話說，多個突出部12和多個被選的半導體元件20位於黏著膠層13的相對側，並且彼此面對。黏著膠層13包括多個接觸部131和多個未接觸部132。黏著膠層13的多個接觸部131是在轉移多個被選的半導體元件20的特定步驟中，與多個突出部12直接連接的區域。黏著膠層13的多個未接觸部132是在轉移多個被選的半導體元件20的特定步驟中，從未與多個突出部12連接的區域。詳細來說，相鄰的兩個接觸部131被未接觸部132間隔開。在將多個被選的半導體元件20與膠帶90分離之前，多個接觸部131和多個未接觸部132基本上位於相同的高度/平面上。黏著膠層13優選是可撓的和可延展的。黏著膠層13可以選自紫外線（UV）膠帶，熱解離膠帶和藍膜，但不限於此。
如第20B圖所示，壓模11朝著多個半導體元件20移動。黏著膠層13的接觸部131被突出部12推出，使得接觸部131變形並接觸多個被選的半導體元件20。未接觸部132未被突出部12推出，且未、或是少部分接觸半導體元件20。換句話說，當壓模11朝著多個半導體元件20移動時，黏著膠層13會產生形變。因此，多個接觸部131和多個未接觸部132不在同一平面/高度上。然後，從膠帶90的底側向多個被選的半導體元件20和膠帶90的界面施加至少一個能量束51，例如雷射。膠帶90與多個被選的半導體元件20之間的黏性因為能量束的施加而減小。至少一個能量束51可以由能量束產生器（未示出）提供。在一個實施例中，多個被選的半導體元件20被單個能量束照射，或是被多個能量束在相同的或幾乎相同的時間點照射。在另一實施例中，多個被選的半導體元件20依序被至少一個能量束51施加。
如第20C圖所示，將帶有黏著膠層13和多個被選半導體元件20的壓模11從膠帶90移開。黏附於黏著膠層13的多個被選半導體元件20與膠帶90分離。非被選的多個半導體元件20留在膠帶90上。初始裝載在膠帶90上的多個半導體元件20以第一陣列的形式排列。由壓模11拾取的多個被選半導體元件20以第二陣列的形式排列。第二陣列上相鄰半導體元件20之間的距離大於第一陣列上相鄰半導體元件20之間的距離。
如第20D圖所示，壓模11連同黏著膠層13和多個被選的半導體元件20一起向載體板70移動，將多個被選的半導體元件20放置在載體板70上。至少一個能量束51施加到多個被選的半導體元件20和黏著膠層13之間的界面，用以降低黏著膠層13的黏性。至少一個能量束51'施加到多個被選的半導體元件20和載體板70之間的界面上，用以增加載體板70的黏性。如第20E圖所示，然後將壓模11從載體板70移開，多個被選的半導體元件20留置在載體板70上。在另一個實施例中，載體板70可以是目標基板。
至少一個能量束51或51'可以由能量束產生器（未示出）提供。 在一個實施例中，多個被選的半導體元件20被單個能量束照射，或是被多個能量束在相同的或幾乎相同的時間點照射。在另一實施例中，多個被選的半導體元件20依序被至少一個能量束51或51'施加。
第21A～21E圖顯示根據本發明另一實施例將初始裝載在膠帶90上的多個半導體元件20轉移到載體板70的步驟。如第21A圖所示，在多個半導體元件20的正上方配置有壓模11和黏著膠層13，用以剝離多個被選的半導體元件20。第21A圖和第20A圖之間的區別在於， 第21A圖中的壓模11不具有多個突出部。第21A圖中的壓模11可以轉移一半導體元件20的陣列。黏著膠層13和壓模11的接觸部131在底視圖或上視圖中幾乎彼此重疊。
如第21B圖所示，壓模11朝著多個半導體元件20移動。黏著膠層13的接觸部131被壓模11推出，黏著膠層13因而變形，使得接觸部131接觸多個被選的半導體元件20。多個被選的半導體元件20以陣列的形式排列在膠帶90上。隨後，一能量束51施加到多個被選的半導體元件20和膠帶90的界面。膠帶90與多個被選的半導體元件20之間的黏性因為能量束的施加而減小。
如第21C圖所示，將壓模11從膠帶90移開，多個被選半導體元件20因而與膠帶90分離。非被選的多個半導體元件20留在膠帶90上。具體來說，所有設置在壓模11突出部上的半導體元件20與載體90分離。初始裝載在膠帶90上的多個半導體元件20以第一陣列的形式排列。由壓模11拾取的多個被選半導體元件20以第二陣列的形式排列。第二陣列上相鄰半導體元件20之間的距離大致與第一陣列上相鄰半導體元件20之間的距離相同。
如第21D圖所示，壓模11向載體板70移動，將多個被選的半導體元件20放置在載體板70上。一能量束51施加到多個被選的半導體元件20和黏著膠層13之間的界面，用以降低黏著膠層13的黏性。一能量束51'施加到多個被選的半導體元件20和載體板70之間的界面上，用以增加載體板70與多個半導體元件20之間的黏性。如第21E圖所示，將壓模11從載體板70移開，多個被選的半導體元件20留置在載體板70上。在另一個實施例中，載體板70可以是目標基板。
以上所述之實施例僅係為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。
10:目標基板
11:壓模
12:突出部
13:黏著膠層
131:接觸部
132:被未接觸部
20:半導體元件
21:電極對
22:發光疊層
30:支撐基座
40:電路結構
40a:電接觸點
41:玻璃板
42:透明導電層
43:金屬層
44:結合層
45:共金層
46:輔助結合層
47:濕潤層
48:第一複合層
49:第二複合層
43':第一增強電路層
44':絕緣層
45':第二增強電路層
441:通孔
50:能量束產生器
51、51':能量束
60:背面反射器
62:反射層
63:保護膜
64:絕緣介電層
70:載體板
80A:焊料
80C:粘合劑
80E:金屬層
80F:粘合劑
80P:金屬顆粒
81:電連接通道
90:膠帶
S101:步驟
S102:步驟
S103:步驟
S1010:步驟
S1011:步驟
S10111:步驟
S10112:步驟
S10113:步驟
S1012:步驟
S1013:步驟
S1014:步驟
S1015:步驟
S10151:步驟
S10152:步驟
S1031:步驟
S1032:步驟
第1圖係呈現本申請的固晶製程示意圖。
第2圖係呈現第1圖中的固晶結構的射線產生器與目標基板相鄰並產生能量束的示意圖。
第3圖係根據本申請之固晶結構中射線產生器之實施例的示意圖，射線產生器產生能量束以加熱半導體元件和對應的電接觸點。
第4圖係根據本申請之固晶結構中射線產生器之另一實施例的示意圖，射線產生器產生複數個能量束以分別加熱複數個半導體元件和對應的電接觸點。
第5圖與第5A圖係根據本申請第一實施例的固晶結構中半導體元件的一對電極上預先形成的接合材料示意圖。
第6圖與第6A圖係根據本申請另一實施例的固晶結構中各電接觸點上塗敷接合材料的示意圖。
第7圖與第7A圖係根據本申請另一實施例的固晶結構中，分別在每個電極及對應電接觸點上預先形成兩種接合材料的示意圖；
第8圖係表示第1圖中的固晶結構中目標基板之電路結構的第一實施例的示意圖。
第9圖係表示第1圖中的固晶結構中目標基板之電路結構的第二實施例的示意圖。
第10圖係表示第1圖中的固晶結構中目標基板之電路結構的第三實施例的示意圖。
第11圖係表示第1圖中的固晶結構中目標基板之電路結構的第四實施例的示意圖。
第12圖係表示第1圖中的固晶結構中目標基板之電路結構的第五實施例的示意圖。
第13圖係表示第1圖中的固晶結構中目標基板之電路結構的第六實施例的示意圖。
第14圖係呈現第1圖中固晶結構的目標基板具有背面反射層的電路結構的第七實施例的示意圖。
第15圖係呈現第14圖中背面反射層的第一實施方式的示意圖。
第16圖係呈現第14圖中背面反射層的第二實施方式的示意圖。
第17圖係呈現本申請之固晶方法的流程圖。
第18A圖和第18B圖係呈現第17圖中關於提供具有電路和多個半導體元件之目標基板的子步驟流程圖。
第19圖係呈現第17圖中提供至少一個能量束的子步驟相關的實施例的流程圖。
第20A圖至第20E圖係呈現一與半導體元件轉移步驟相關的實施例。
第21A圖至第21E圖係呈現另一與半導體元件轉移步驟相關的實施例。
10:目標基板
20:半導體元件
21:電極對
22:發光疊層
30:支撐基座
40:電路結構
40a:電接觸點
50:能量束產生器
51:能量束
70:載體板
90:膠帶

Claims (10)

  1. 一種固晶方法，包含： 提供一目標基板，包含一支撐基板以及一電路結構，該電路結構形成在該支撐基板之一側並具有一對電接觸點； 提供一載體板以、複數個半導體元件及一第一結合材料，該複數個半導體元件放置於該載體板上，其中，該複數個半導體元件包含一第一半導體元件，該第一半導體元件具有一對電極，該對電極對準該對電接觸點，該第一結合材料形成在該對電極上；以及 提供一能量束以加熱該第一粘合材料並接合該對電極以及該對電接觸點。
  2. 如請求項1之固晶方法，其中，該目標基板包括印刷電路板、柔性電路板、玻璃電路板或帶有薄膜電晶體電路或脈衝頻寬調製驅動電路的背板。
  3. 如請求項1之固晶方法，其中，該支撐基板包含一玻璃板
  4. 如請求項1之固晶方法，其中，該能量束具有一加熱循環，該加熱循環的周期在0.01秒至1秒的範圍內。
  5. 如請求項4之固晶方法，其中，在該加熱循環中，該能量束用來加熱該複數個半導體元件中至少兩個。
  6. 如請求項1之固晶方法，其中，該第一結合材料包含錫或錫銀的金屬層。
  7. 如請求項1之固晶方法，更包含提供一第二結合材料，設置於該對電接觸點上，其中，該第二結合材料包含助焊劑或絕緣粘合劑。
  8. 如請求項1之固晶方法，其中該複數個半導體元件以一固定的間距放置於該載體板上。
  9. 如請求項1之固晶方法，其中該能量束先照射該第一半導體元件後，再加熱該第一粘合材料
  10. 如請求項1之固晶方法，其中該能量束穿過該支撐基板後，再加熱該第一粘合材料。
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US11362060B2 (en) 2022-06-14
US11728310B2 (en) 2023-08-15
CN111491462A (zh) 2020-08-04
US20200243478A1 (en) 2020-07-30
TWI809246B (zh) 2023-07-21

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