TW202341112A - Light-emitting device array substrate and method for fabricating the same - Google Patents

Abstract

A light-emitting device array substrate includes a carrier, a plurality of light-emitting device sets and a bonding structure. The plurality of light-emitting device sets is disposed on the carrier, and the plurality of light-emitting device sets includes a plurality of light-emitting devices respectively. The bonding structure is disposed between the plurality of light-emitting device sets and the carrier and has a plurality of closed openings, wherein an outline of each of the plurality of closed openings surrounds one of the plurality of light-emitting device sets. Each of the plurality of closed openings has a first inner sidewall, and a minimum spacing between the first inner sidewall and the plurality of light-emitting device sets is greater than or equal to a minimum spacing between the plurality of light-emitting devices. A method for fabricating a light-emitting device array substrate is also provided.

Description

Light emitting element array substrate and manufacturing method thereof

The invention relates to a light-emitting element array substrate and a manufacturing method thereof.

Due to the extremely small size of micro-LEDs, the current method of manufacturing micro-LED light-emitting element array substrates is to use multiple mass transfer (Mass Transfer) technology to gradually transfer micro-LED grains to On the driving substrate of the pixel circuit, the micro light-emitting diode chips are temporarily fixed on different transfer carriers through adhesive materials to achieve the desired results for each transfer.

During multiple large-volume transfer processes, the pads of the micro-LED dies will be covered by the adhesive material. Therefore, during the subsequent transfer process, the adhesive material covering the pads must be removed to allow the micro-LED dies to be released. Polar body dies enable connections to external components. However, during the process of removing the adhesive material covering the pads, the adhesive material fixing the micro-LED die to the transfer carrier will also be removed, resulting in the micro-LED die being attached to the transfer carrier. The position is shifted, thus affecting the alignment accuracy of the micro-LED die and the transfer accuracy in subsequent transfer steps.

The invention provides a light-emitting element array substrate with good alignment accuracy.

The invention provides a method for manufacturing a light-emitting element array substrate, which has good transfer accuracy.

One embodiment of the present invention proposes a light-emitting element array substrate, including: a carrier; a plurality of light-emitting element groups disposed on the carrier, and the plurality of light-emitting element groups respectively include a plurality of light-emitting elements; and an adhesive structure located on the plurality of light-emitting element arrays. Between a light-emitting element group and the carrier board, there are a plurality of closed openings, wherein the outer contours of the plurality of closed openings respectively surround the plurality of light-emitting element groups, the plurality of closed openings respectively have a first inner wall, and the first inner wall and The minimum spacing between multiple light-emitting element groups is greater than or equal to the minimum spacing between multiple light-emitting elements.

One embodiment of the present invention provides a method for manufacturing a light-emitting element array substrate, including: providing a first carrier board on which a plurality of light-emitting element groups are configured, and the plurality of light-emitting element groups each include a plurality of light-emitting elements; A second carrier is provided, and an adhesive structure is disposed on the second carrier; a plurality of closed openings are formed in the adhesive structure; and a plurality of light-emitting element groups are transferred from the first carrier to the second carrier, and a plurality of The light-emitting element groups are respectively fixed on adhesive structures respectively surrounded by outer contours of multiple closed openings.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout this specification, the same reference numbers refer to the same elements. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Furthermore, "electrical connection" or "coupling" can mean the presence of other components between two components.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections /or parts shall not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first "element", "component", "region", "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

Additionally, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation illustrated in the figures. For example, if the device in one of the figures is turned over, elements described as "below" other elements would then be oriented "above" the other elements. Thus, the exemplary term "lower" may include both "lower" and "upper" orientations, depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "lower" or "lower" may include both upper and lower orientations.

As used herein, "about," "approximately," or "substantially" includes the stated value and those within ordinary skill in the art, given the specific amount of error associated with the measurement in question (i.e., the limitations of the measurement system). An average within a range of acceptable deviations for a specific value determined by a person. For example, "about" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the terms "approximately", "approximately", or "substantially" used in this article can be used to select a more acceptable deviation range or standard deviation based on optical properties, etching properties, or other properties, and one standard deviation does not apply to all. nature.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed to have meanings consistent with their meanings in the context of the relevant technology and the present invention, and are not to be construed as idealistic or excessive Formal meaning, unless expressly defined as such herein.

Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. Accordingly, variations in the shape of the illustrations, for example as a result of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, regions shown or described as flat may typically have rough and/or non-linear characteristics. Additionally, the acute angles shown may be rounded. Accordingly, the regions shown in the figures are schematic in nature and their shapes are not intended to show the precise shapes of the regions and are not intended to limit the scope of the claims.

1A to 4D are partial top schematic views and cross-sectional schematic views of the step flow of a method for manufacturing a light-emitting element array substrate 10 according to an embodiment of the present invention. Hereinafter, the manufacturing method of the light emitting element array substrate 10 will be described with reference to FIGS. 1A to 4D .

1A to 1B, the light-emitting element LD is transferred from the growth substrate GS to the adhesive material AM on the first carrier C1, so that the light-emitting element LD is fixed on the first carrier C1 through the adhesive material AM to provide its A first carrier C1 on which a plurality of light emitting elements LD is disposed.

In some embodiments, the light-emitting element LD can be attached to the adhesive material AM first, so that the light-emitting element LD is located between the growth substrate GS and the first carrier C1. Next, the growth substrate GS is removed to expose the semiconductor stack ES of the light emitting element LD. The growth substrate GS can be removed by, for example, a laser lift off process, but the present invention is not limited thereto. As shown in FIG. 1B , after the light-emitting element LD is transferred to the first carrier C1 , the first pad PD1 and the second pad PD2 of the light-emitting element LD can be adhered to the adhesive material AM, and the first pad PD1 and the second pad PD2 of the light-emitting element LD can be adhered to the adhesive material AM. The pad PD2 may be located between the semiconductor stack ES and the adhesive material AM.

In detail, the light emitting element LD may be formed on the growth substrate GS. The growth substrate GS is, for example, a sapphire substrate, but the present invention is not limited thereto. In some embodiments, the method of forming the light-emitting element LD may include performing an epitaxial process using appropriate reactants to deposit a required thin film, and then patterning the film through a photolithography process and an etching process to form the light-emitting element. Each sub-layer of LD. In some embodiments, a doping process can also be selectively performed on some sub-layers of the light-emitting element LD.

For example, in some embodiments, the light emitting element LD may include a semiconductor stack ES, a first pad PD1, a second pad PD2, and an insulating layer EU, where the first pad PD1 and the second pad PD2 are electrically connected respectively. are electrically connected to different sub-layers in the semiconductor stack ES, and the insulating layer EU may be located between a portion of the first pad PD1 and the semiconductor stack ES and between a portion of the second pad PD2 and the semiconductor stack ES, but The electrical connection between the first pad PD1 and the second pad PD2 and different sub-layers of the semiconductor stack ES is not affected. In this embodiment, the first pad PD1 and the second pad PD2 of the light-emitting element LD are located on the same side of the semiconductor stack ES, but the invention is not limited thereto. In some embodiments, the first pad PD1 and the second pad PD2 may be located on different sides of the semiconductor stack ES.

For example, the semiconductor stack ES may include a stack of P-type doped semiconductor layers, multiple quantum well structures (Multiple Quantum Well, MQW), and N-type doped semiconductor layers, where the multi-layer quantum well structures may be located at the P-type doped semiconductor layer. between the semiconductor layer and the N-type doped semiconductor layer. The materials of the P-type doped semiconductor layer are, for example, P-type II-VI materials (such as zinc selenide (ZnSe)), P-type III-V nitride materials (such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN) or aluminum indium gallium nitride (AlInGaN)) or stacks thereof. The material of the N-type doped semiconductor layer is, for example, an N-type II-VI group material, an N-type III-V group nitride material, or a stack thereof. The multiple quantum well structure may include alternately stacked multiple layers of group II-VI materials and multiple layers of group III-V nitride materials, but the invention is not limited thereto. The materials of the first pad PD1 and the second pad PD2 may include, for example, metal (such as tin), alloy, nitride of metal material, oxide of metal material, oxynitride of metal material, graphene, and a stack of metal materials. layers or stacks of other conductive materials.

Referring to FIG. 1A , a layer of adhesive material AM may be formed on the first carrier C1. The first carrier C1 may be a rigid substrate, such as a glass substrate, a quartz substrate or a ceramic substrate, but the invention is not limited thereto. The adhesive material AM can be formed on the first carrier C1 by coating, but the invention is not limited thereto. The adhesive material AM may include an adhesive material such as acrylic resin.

Referring to FIG. 2, a second carrier C2 is provided, and an adhesive layer AL is formed on the second carrier C2. The second carrier C2 may be a glass substrate, quartz substrate or ceramic substrate, but the invention is not limited thereto. In this embodiment, the adhesive layer AL can be formed on the second carrier C2 by coating, and the adhesive layer AL can include adhesive materials such as acrylic resin, but the invention is not limited thereto.

Referring to Figure 3A, the mask MK and the laser light BS are used to pattern the adhesive layer AL to form a plurality of closed openings O1 in the adhesive layer AL, as shown in Figures 3B and 3C, where Figure 3C is along the edge of Figure 3B A schematic cross-sectional view of the section line A-A'. For example, the mask MK may have an opening OP1. The part of the adhesive layer AL corresponding to the opening OP1 may be hardened after being exposed to the laser light BS. After that, the hardened part of the adhesive layer AL can be removed through a development process, that is, it can be adhered. A closed opening O1 is formed in layer AL. In this embodiment, the adhesive structure AS may include an adhesive layer AL having a closed opening O1. In some embodiments, the closing opening O1 may be formed by laser cutting. The closed opening O1 may have an annular polygonal outline. For example, as shown in FIG. 3B , the closed opening O1 may have an annular quadrilateral outline.

Referring to FIG. 4A , a plurality of light-emitting elements LD are transferred from the first carrier C1 to the second carrier C2 , and the plurality of light-emitting elements LD are fixed on the adhesive layer AL, as shown in FIG. 4B . For example, a laser lift-off process can be used to separate the light-emitting element LD from the first carrier C1, and then transfer the light-emitting element LD to the part of the adhesive layer AL surrounded by the closed opening O1, so that multiple light-emitting elements LD may be located on a portion of the adhesive layer AL surrounded by the closed opening O1. In this embodiment, the plurality of light-emitting elements LD surrounded by each closed opening O1 can be called a light-emitting element group LS. In some embodiments, the adhesive material AM attached to the light-emitting element LD may be detached from the first carrier C1 together with the light-emitting element LD. Therefore, the light-emitting element LD detached from the first carrier C1 may be covered with the adhesive material AM.

Next, the adhesive material AM on the light-emitting element LD can be removed to form the light-emitting element array substrate 10 as shown in FIG. 4C and FIG. 4D , where FIG. 4D is a schematic cross-sectional view taken along the cross-sectional line B-B' of FIG. 4C. The method of removing the adhesive material AM may be a plasma etching process, but the present invention is not limited thereto. Since the material of the adhesive layer AL is similar to the adhesive material AM, during the process of removing the adhesive material AM, part of the adhesive layer AL may be removed at the same time, and cracks CK may be formed in the adhesive layer AL. In this embodiment, by closing the opening O1 to prevent the crack CK from extending to the adhesive layer AL under the light-emitting element group LS, the position of the light-emitting element LD in the light-emitting element group LS can be prevented from shifting, thereby preventing the light-emitting element LD from being A larger offset will occur during the subsequent transfer process, affecting the transfer accuracy of the light-emitting element LD.

As shown in FIG. 4C and FIG. 4D , the light-emitting element array substrate 10 includes: a second carrier C2, a plurality of light-emitting element groups LS, and an adhesive structure AS. A plurality of light-emitting element groups LS are disposed on the second carrier C2, and the plurality of light-emitting element groups LS may each include a plurality of light-emitting elements LD. The adhesive structure AS is located between the plurality of light-emitting element groups LS and the second carrier C2, and the adhesive structure AS includes an adhesive layer AL. The adhesive structure AS has multiple closed openings O1, wherein the outer contours PO of the multiple closed openings O1 respectively surround the multiple light-emitting element groups LS, the multiple closed openings O1 respectively have inner walls W1, and the inner wall W1 is connected with the multiple light-emitting element groups LS. The minimum distance G1 between LS is greater than or equal to the minimum distance G2 between the light emitting elements LD.

Specifically, the minimum distance G2 between the light-emitting elements LD is determined based on the transfer error of the light-emitting elements LD. Therefore, when the minimum distance G1 between the inner wall W1 and the light-emitting element LD is smaller than the minimum distance between the light-emitting elements LD At G2, the light-emitting element LD may be offset to partially hang over the closed opening O1 due to the transfer error, causing the light-emitting element LD to fall obliquely on the adhesive structure AS, thus affecting the accuracy of the subsequent transfer of the light-emitting element LD. By making the minimum distance G1 between the inner wall W1 and the plurality of light-emitting elements LD greater than or equal to the minimum distance G2 between the light-emitting elements LD, the deviation of the light-emitting elements LD can be prevented from exceeding the tolerance error, so that the light-emitting element array substrate 10 has It has good alignment accuracy and can avoid affecting the subsequent transfer accuracy of the light-emitting element LD.

In this embodiment, the inner wall W1 may face away from the surrounded light-emitting element group LS, but the invention is not limited thereto. In this embodiment, each closed opening O1 also has an inner wall W2, the inner wall W2 faces the surrounded light-emitting element group LS, and the inner wall W2 is opposite to the inner wall W1.

In some embodiments, the minimum distance G3 between the light-emitting element groups LS is greater than or equal to the minimum distance G2 between the light-emitting elements LD, so as to prevent the offset of the light-emitting elements LD from causing a short circuit between the light-emitting element groups LS.

In some embodiments, the distance G4 between the closed openings O1 may be greater than zero. In other words, there is a part of the adhesive structure AS between the closed openings O1, so that the closed openings O1 are not connected and separated from each other, and the closed openings O1 The distance G4 between them is smaller than the minimum distance G3 between the light emitting element groups LS.

In this embodiment, each light-emitting element group LS may include three light-emitting elements LD. For example, each light-emitting element group LS includes a red light-emitting element LR, a green light-emitting element LG and a blue light-emitting element LB. However, the present invention does not Limited to this. For example, the red light-emitting element LR, the green light-emitting element LG and the blue light-emitting element LB can respectively form a sub-pixel SP, and the red light-emitting element LR, the green light-emitting element LG and the blue light-emitting element LB can together form a pixel PX. In other words, in this embodiment, the light-emitting element group LS may include one pixel PX, and the closing opening O1 surrounds one pixel PX.

The width OW1 of the closed opening O1 is at least greater than the width of the crack CK. For example, in some embodiments, since the minimum line width of the laser cutting process is about 3 μm, the width OW1 of the closed opening O1 may be 3 μm to 200 μm. In some embodiments, since the depth of the crack CK is about 1 μm to 2 μm, and the total thickness TA of the adhesive structure AS is about 50 μm, the depth DO1 of the closed opening O1 may be 5% to 5% of the total thickness TA of the adhesive structure AS. 100% to ensure that the crack CK will not cause the position of the light-emitting element LD to shift.

Below, other embodiments of the present invention will be continued to be described using FIGS. 5 to 11 , and the component numbers and related content of the embodiments of FIGS. 1A to 4D will be used, where the same numbers are used to represent the same or similar elements, and Explanations of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the embodiments of FIGS. 1A to 4D , which will not be repeated in the following description.

FIG. 5 is a partial top view of the light emitting element array substrate 20 according to an embodiment of the present invention. The light-emitting element array substrate 20 includes: a second carrier C2, a plurality of light-emitting element groups LS, and an adhesive structure AS. A plurality of light-emitting element groups LS are disposed on the second carrier C2, and the plurality of light-emitting element groups LS may each include a plurality of light-emitting elements LD. The adhesive structure AS is located between the plurality of light-emitting element groups LS and the second carrier C2, and the adhesive structure AS has a plurality of closed openings O1, in which the outer contours PO of the plurality of closed openings O1 respectively surround the plurality of light-emitting element groups LS, and there are multiple Each closed opening O1 has an inner wall W1, and the minimum distance G1 between the inner wall W1 and the plurality of light-emitting element groups LS is greater than or equal to the minimum distance G2 between the light-emitting elements LD.

The main difference between the light-emitting element array substrate 20 shown in FIG. 5 and the light-emitting element array substrate 10 shown in FIGS. 4C to 4D is that the light-emitting element group LS of the light-emitting element array substrate 20 may include a plurality of pixels PX, and the closed The opening O1 may surround multiple pixels PX. For example, each light emitting element group LS may include two pixels PX, three pixels PX, or more pixels PX.

6A to 7D are partial top schematic views and cross-sectional schematic views of the step flow of the manufacturing method of the light-emitting element array substrate 30 according to an embodiment of the present invention. It should be noted that the step process of FIGS. 6A to 7D is performed after the step process of FIGS. 1A to 2 . Refer to the foregoing description for the step process of FIGS. 1A to 2 and will not be repeated here.

Referring to Figure 6A, the photoresist PR is used as a mask to perform an etching process on the adhesive layer AL, and then the photoresist PR is removed to form an adhesive structure AS with multiple closed openings O2, as shown in Figures 6B and 6C. , where Figure 6C is a schematic cross-sectional view taken along the section line CC' of Figure 6B.

For example, the photoresist PR may have an opening OP2. After the etching process, the portion of the adhesive structure AS corresponding to the opening OP2 may be removed to form a closed opening O2. In some embodiments, the closure opening O2 may have a polygonal outline. For example, as shown in FIG. 6B , the closing opening O2 may have a quadrangular outline.

Referring to FIG. 7A , a plurality of light-emitting elements LD are transferred from the first carrier C1 to the second carrier C2 , and the plurality of light-emitting elements LD are fixed on the adhesive structure AS, as shown in FIG. 7B . For example, a laser lift-off process can be used to separate the light-emitting element LD from the first carrier C1, and then the light-emitting element LD is transferred to the partial adhesive structure AS in the closed opening O2, so that multiple light-emitting elements The plurality of light-emitting element groups LS composed of LD may be respectively located in the closed opening O2. In this embodiment, the plurality of light-emitting elements LD in each closed opening O2 may be called a light-emitting element group LS. In some embodiments, the adhesive material AM attached to the light-emitting element LD may be detached from the first carrier C1 together with the light-emitting element LD. Therefore, the light-emitting element LD detached from the first carrier C1 may be covered with the adhesive material AM.

Next, the adhesive material AM on the light-emitting element LD can be removed to form the light-emitting element array substrate 30 as shown in FIG. 7C and FIG. 7D , where FIG. 7D is a schematic cross-sectional view taken along the section line D-D' of FIG. 7C. The method of removing the adhesive material AM may be a plasma etching process, but the present invention is not limited thereto. Since the material of the adhesive structure AS is similar to the adhesive material AM, during the process of removing the adhesive material AM, part of the adhesive structure AS may be removed at the same time, and cracks CK may be formed in the adhesive structure AS. In this embodiment, by closing the opening O2 to prevent the crack CK from extending to the adhesive structure AS under the light-emitting element group LS, the position of the light-emitting element LD in the light-emitting element group LS can be prevented from shifting, thereby preventing the light-emitting element LD from being A larger offset will occur during the subsequent transfer process, affecting the transfer accuracy of the light-emitting element LD.

As shown in FIG. 7C and FIG. 7D , the light-emitting element array substrate 30 includes: a second carrier C2, a plurality of light-emitting element groups LS, and an adhesive structure AS. A plurality of light-emitting element groups LS are disposed on the second carrier C2, and the plurality of light-emitting element groups LS may each include a plurality of light-emitting elements LD. The adhesive structure AS is located between the plurality of light-emitting element groups LS and the second carrier C2, and the adhesive structure AS has a plurality of closed openings O2, wherein the outer contours PO of the plurality of closed openings O2 respectively surround the plurality of light-emitting element groups LS, and there are multiple Each closed opening O2 has an inner wall W3 facing the surrounding light-emitting element group LS, and the minimum distance G1 between the inner wall W3 and the plurality of light-emitting element groups LS is greater than or equal to the minimum distance G2 between the light-emitting elements LD.

Since the minimum distance G2 between the light-emitting elements LD is determined based on the transfer error of the light-emitting elements LD, when the minimum distance G1 between the inner wall W3 and the light-emitting element LD is smaller than the minimum distance G2 between the light-emitting elements LD, The light-emitting element LD may be partially suspended on the closed opening O2 due to a transfer error, causing the light-emitting element LD to fall obliquely on the adhesive structure AS outside the closed opening O2, thus affecting the accuracy of subsequent transfer. By making the minimum distance G1 between the inner wall W3 and the plurality of light-emitting elements LD greater than or equal to the minimum distance G2 between the light-emitting elements LD, the deviation of the light-emitting elements LD can be prevented from exceeding the tolerance error, so that the light-emitting element array substrate 30 has It has good alignment accuracy and can avoid affecting the subsequent transfer accuracy of the light-emitting element LD.

In this embodiment, the adhesive structure AS may include a first part P1 and a second part P2, where the first part P1 is located between the surrounded light-emitting element LD and the second carrier C2, the second part P2 surrounds the closed opening O2, and The material of the first part P1 is the same as the material of the second part P2. In some embodiments, the distance G4 between the closed openings O2 may be greater than zero. In other words, there is a part of the adhesive structure AS between the closed openings O2, so that the closed openings O2 are not connected and separated from each other.

In this embodiment, each light-emitting element group LS may include one pixel PX, and the closing opening O2 may surround one pixel PX. In some embodiments, the width OW2 of the closing opening O2 may be approximately 200 μm to 650 μm. In some embodiments, the thickness T1 of the adhesive structure AS in the closed opening O2 is at least 10% of the total thickness TA of the adhesive structure AS to ensure that the light emitting element LD can be fixed to the second carrier C2 through the adhesive structure AS. In some embodiments, the depth DO2 of the closed opening O2 may be 5% to 90% of the total thickness TA of the adhesive structure AS. In some embodiments, the distance HU between the surface of the insulating layer EU away from the second carrier board C2 and the second carrier board C2 is not less than the total thickness TA of the adhesive structure AS to ensure that the first pad PD1 and the second pad The pad PD2 protrudes from the upper surface of the adhesive structure AS without affecting the connection between the first pad PD1 and the second pad PD2 with external components in subsequent processes.

FIG. 8 is a partial top view of the light emitting element array substrate 40 according to an embodiment of the present invention. The light-emitting element array substrate 40 includes: a second carrier C2, a plurality of light-emitting element groups LS, and an adhesive structure AS. A plurality of light-emitting element groups LS are disposed on the second carrier C2, and the plurality of light-emitting element groups LS may each include a plurality of light-emitting elements LD. The adhesive structure AS is located between the plurality of light-emitting element groups LS and the second carrier C2, and the adhesive structure AS has a plurality of closed openings O2, wherein the outer contours PO of the plurality of closed openings O2 respectively surround the plurality of light-emitting element groups LS.

The main difference between the light-emitting element array substrate 40 shown in FIG. 8 and the light-emitting element array substrate 30 shown in FIGS. 7C to 7D is that the number of light-emitting elements of the light-emitting element groups LS of the light-emitting element array substrate 40 is not exactly the same. For example, in this embodiment, the light-emitting element group LS may include a light-emitting element group LS1 and a light-emitting element group LS2, and the number of light-emitting elements of the light-emitting element group LS1 is different from that of the light-emitting element group LS2. For example, the light-emitting element group LS1 may include one pixel PX, the light-emitting element group LS2 may include two pixels PX, and each pixel PX may include three light-emitting elements LD.

In some embodiments, since the number of cracks CK located in the peripheral area AP of the second carrier board C2 is greater than the number of cracks CK located in the central area AC, the light emitting element group LS2 can be designed to be located in the central area AC of the second carrier board C2 , and the light-emitting element group LS1 is located in the peripheral area AP of the second carrier C2. In other words, the number of light-emitting elements surrounded by the outer contour PO of the closed opening O2 located in the central area AC of the second carrier plate C2 may be greater than the number of light-emitting elements surrounded by the outer contour PO of the closed opening O2 located in the peripheral area AP of the second carrier plate C2 number of components to save time in laser cutting.

9A to 10D are partial top schematic views and cross-sectional schematic views of the step flow of the manufacturing method of the light-emitting element array substrate 50 according to an embodiment of the present invention. It should be noted that the step process of FIGS. 9A to 10D is performed after the step process of FIGS. 1A to 2 . Refer to the foregoing description for the step process of FIGS. 1A to 2 and will not be repeated here.

Referring to FIG. 9A , a protective layer PL is formed on the adhesive layer AL. Next, referring to FIG. 9B , the photoresist PR is used as a mask to perform an etching process on the protective layer PL, and then the photoresist PR is removed to form the protective layer PL with a plurality of closed openings O3 , as shown in FIGS. 9C and 9D 9D is a schematic cross-sectional view taken along the sectional line EE' of FIG. 9C. For example, the photoresist PR can have an opening OP3. After the etching process, the portion of the protective layer PL corresponding to the opening OP3 can be removed to form a closed opening O3, and the closed opening O3 can expose a portion of the adhesive layer AL. . In this embodiment, the adhesive layer AL and the protective layer PL with the closed opening O3 can be regarded as the adhesive structure AS. That is to say, the adhesive structure AS can include the adhesive layer AL and the protective layer PL with the closed opening O3. The protective layer PL can be used to protect the adhesive layer AL.

Referring to FIG. 10A , the light-emitting element LD is transferred from the first carrier C1 to the second carrier C2 , and the light-emitting element LD is fixed on the portion of the adhesive layer AL exposed by the closed opening O3 , as shown in FIG. 10B . In this embodiment, the plurality of light-emitting elements LD in each closed opening O3 can be called a light-emitting element group LS, and each light-emitting element group LS can be located in one closed opening O3. In some embodiments, the adhesive material AM attached to the light-emitting element LD can be detached from the first carrier C1 together with the light-emitting element LD. Therefore, the light-emitting element LD detached from the first carrier C1 can be covered with the adhesive material AM.

Next, the adhesive material AM on the light-emitting element LD can be removed to form the light-emitting element array substrate 50 as shown in FIG. 10C and FIG. 10D , where FIG. 10D is a schematic cross-sectional view taken along the cross-sectional line F-F' of FIG. 10C. The method of removing the adhesive material AM may be a plasma etching process, but the present invention is not limited thereto. In this embodiment, since the protective layer PL covers the adhesive layer AL, during the process of removing the adhesive material AM, the protective layer PL can protect the adhesive layer AL to avoid cracks in the adhesive layer AL, thereby preventing the light-emitting element assembly from occurring. The position of the light-emitting element LD in the LS is shifted.

As shown in FIG. 10C and FIG. 10D , the light-emitting element array substrate 50 includes: a second carrier C2, a plurality of light-emitting element groups LS, and an adhesive structure AS. A plurality of light-emitting element groups LS are disposed on the second carrier C2, and the plurality of light-emitting element groups LS may each include a plurality of light-emitting elements LD. The adhesive structure AS is located between the plurality of light-emitting element groups LS and the second carrier C2, and the adhesive structure AS has a plurality of closed openings O3, in which the outer contours PO of the plurality of closed openings O3 respectively surround the plurality of light-emitting element groups LS. Each closed opening O3 has an inner wall W4, and the minimum distance G1 between the inner wall W4 and the plurality of light-emitting element groups LS is greater than or equal to the minimum distance G2 between the light-emitting elements LD.

Since the minimum distance G2 between the light-emitting elements LD is determined based on the transfer error of the light-emitting elements LD, when the minimum distance G1 between the inner wall W4 and the light-emitting element LD is smaller than the minimum distance G2 between the light-emitting elements LD, The light-emitting element LD may be partially suspended on the closed opening O3 due to a transfer error, causing the light-emitting element LD to tilt and fall on the protective layer PL outside the closed opening O3, thus affecting the accuracy of subsequent transfer. By making the minimum distance G1 between the inner wall W4 and the plurality of light-emitting elements LD greater than or equal to the minimum distance G2 between the light-emitting elements LD, the deviation of the light-emitting elements LD can be prevented from exceeding the tolerance error, so that the light-emitting element array substrate 50 has It has good alignment accuracy and can avoid affecting the subsequent transfer accuracy of the light-emitting element LD.

In this embodiment, the inner side wall W4 may face the surrounded plurality of light emitting elements LD. The adhesive structure AS may include an adhesive layer AL and a protective layer PL, where the adhesive layer AL is located between the surrounded light-emitting element group LS and the second carrier C2, the protective layer PL surrounds the closed opening O3, and the material and protection layer of the adhesive layer AL The materials of layer PL are different. In some embodiments, the adhesive layer AL may include organic materials, such as acrylic resin, and the protective layer PL may include inorganic materials, such as metal, silicon dioxide, etc.

In this embodiment, each light-emitting element group LS may include one pixel PX, and the closing opening O3 may surround one pixel PX. In some embodiments, the width OW3 of the closing opening O3 may be 200 μm to 650 μm. In some embodiments, the distance HU between the surface of the insulating layer EU away from the second carrier board C2 and the second carrier board C2 is not less than the total thickness TA of the adhesive structure AS to ensure that the first pad PD1 and the second pad The pad PD2 protrudes from the upper surface of the protective layer AL and can be smoothly connected to external components in subsequent processes.

FIG. 11 is a partial top view of a light emitting element array substrate 60 according to an embodiment of the present invention. The light-emitting element array substrate 60 includes: a second carrier C2, a plurality of light-emitting element groups LS, and an adhesive structure AS. A plurality of light-emitting element groups LS are disposed on the second carrier C2, and the plurality of light-emitting element groups LS may each include a plurality of light-emitting elements LD. The adhesive structure AS is located between the plurality of light-emitting element groups LS and the second carrier C2, and the adhesive structure AS has a plurality of closed openings O4, wherein the outer contours PO of the plurality of closed openings O4 respectively surround the plurality of light-emitting element groups LS.

The main difference between the light-emitting element array substrate 60 shown in FIG. 11 and the light-emitting element array substrate 50 shown in FIGS. 10C to 10D is that the shape of the closed opening O4 is different from the shape of the closed opening O3, and the shape of the light-emitting element array substrate 60 is different. The number of light-emitting elements of the light-emitting element groups LS is not exactly the same.

For example, in this embodiment, the closing opening O4 may have an L-shaped profile. In addition, the light-emitting element group LS may include, for example, the light-emitting element group LS3 and the light-emitting element group LS4, and the number of light-emitting elements of the light-emitting element group LS3 is different from that of the light-emitting element group LS4. For example, the light-emitting element group LS3 may include one pixel PX, the light-emitting element group LS4 may include three pixels PX, and each pixel PX may include three light-emitting elements LD. In some embodiments, the arrangement of the light-emitting elements LD in each pixel PX in the closed opening O4 may be different from the arrangement of the light-emitting elements LD in each pixel PX in the closed openings O1, O2, and O3. For example, the light-emitting elements LR, LG, and LB of the pixel PX in the closed opening O1 can be arranged in the same direction, and the light-emitting elements LR and LG of the pixel PX in the closed opening O4 can be arranged along the first direction D1 to emit light. The elements LG and LB may be arranged along the second direction D2, and the first direction D1 may intersect the second direction D2, so that the pixel PX in the closed opening O4 also has an L-shaped outline.

In some embodiments, it can be designed that the light-emitting element group LS4 is located in the central area AC of the second carrier board C2, and the light-emitting element group LS3 is located in the peripheral area AP of the second carrier board C2, so that the light-emitting element group LS3 located in the second carrier board C2 The number of light-emitting elements surrounded by the outer contour PO of the closed opening O4 in the central area AC is greater than the number of light-emitting elements surrounded by the outer contour PO of the closed opening O4 located in the peripheral area AP of the second carrier plate C2.

12A to 12D are partial cross-sectional schematic diagrams of the steps of a manufacturing method of the light emitting element array substrate 70 according to an embodiment of the present invention. It should be noted that the step process of FIGS. 12A to 12D is performed after the step process of FIGS. 1A to 2 . Refer to the foregoing description for the step process of FIGS. 1A to 2 and will not be repeated here.

Referring to FIGS. 12A and 12B , the plurality of light-emitting elements LD fixed on the first carrier C1 by the adhesive AM are transferred to the adhesive layer AL on the second carrier C2, so that the plurality of light-emitting elements LD are The adhesive layer AL is fixed on the second carrier C2, and the light-emitting element LD has an adhesive material AM.

Next, please refer to FIG. 12C , a plurality of closed openings O5 are formed in the adhesive layer AL, and the closed openings O5 surround the light-emitting element group LS composed of a plurality of light-emitting elements LD. In this embodiment, the adhesive structure AS may include an adhesive layer AL having a closed opening O5. The width OW5 of the closed opening O5 may be approximately 30 μm, and the depth DO5 of the closed opening O5 may be approximately 20 μm. The total thickness TA of the adhesive structure AS may be approximately 70 μm.

Next, please refer to FIG. 12D to remove the adhesive material AM on the light-emitting element LD to expose the first pad PD1 and the second pad PD2 of the light-emitting element LD. During the removal of the adhesive material AM, a crack CK is formed in the adhesive structure AS, and closing the opening O5 can prevent the crack CK from extending to the adhesive structure AS or the adhesive layer AL under the light-emitting element LD, thus preventing the position of the light-emitting element LD. An offset is generated to ensure that the alignment accuracy of the light-emitting elements LD in the light-emitting element array substrate 70 is still within the allowable error range.

To sum up, the light-emitting element array substrate of the present invention prevents cracks in the adhesive structure caused by the plasma etching process from extending below the light-emitting elements by providing closed openings, thereby preventing the position of the light-emitting elements from shifting, thereby making the light-emitting elements The array substrate has good alignment accuracy. In addition, the manufacturing method of the light-emitting element array substrate of the present invention can avoid light emission by forming a closed opening in the adhesive structure and making the minimum distance between the inner wall of the closed opening and the light-emitting elements greater than or equal to the minimum distance between the light-emitting elements. The deviation of the component exceeds the tolerance error, thereby avoiding affecting the subsequent transfer accuracy of the light-emitting component.

Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.

10~70: Light emitting element array substrate A-A’, B-B’, C-C’, D-D’, E-E’, F-F’: hatching AC:Central District AL: adhesive layer AM: adhesive material AP:surrounding area AS: adhesive structure BS: laser light C1: First carrier board C2: Second carrier board CK:Crack D1: first direction D2: second direction DO1, DO5: Depth ES: semiconductor stack EU: insulation layer G1, G2, G3: minimum spacing G4: spacing GS: growth substrate HU: spacing LB, LD, LG, LR:Light-emitting components LS, LS1, LS2, LS3, LS4: Light emitting element set MK: mask O1, O2, O3, O4, O5: closed opening OP1, OP2, OP3: opening OW1, OW5: width PD1: first pad PD2: Second pad PL: protective layer PO:outline PR: Photoresist PX: pixel SP: sub-pixel TA: total thickness W1, W2, W3, W4: inner wall

1A to 4D are partial top schematic views and cross-sectional schematic views of the step flow of a method for manufacturing a light-emitting element array substrate 10 according to an embodiment of the present invention. FIG. 5 is a partial top view of the light emitting element array substrate 20 according to an embodiment of the present invention. 6A to 7D are partial top schematic views and cross-sectional schematic views of the step flow of the manufacturing method of the light-emitting element array substrate 30 according to an embodiment of the present invention. FIG. 8 is a partial top view of the light emitting element array substrate 40 according to an embodiment of the present invention. 9A to 10D are partial top schematic views and cross-sectional schematic views of the step flow of the manufacturing method of the light-emitting element array substrate 50 according to an embodiment of the present invention. FIG. 11 is a partial top view of a light emitting element array substrate 60 according to an embodiment of the present invention. 12A to 12D are partial cross-sectional schematic diagrams of the steps of a manufacturing method of the light emitting element array substrate 70 according to an embodiment of the present invention.

10:Light-emitting element array substrate

AL: adhesive layer

AS: adhesive structure

B-B’: hatch line

C2: Second carrier board

CK:Crack

G1, G2, G3: minimum spacing

G4: spacing

LB, LD, LG, LR: light emitting components

LS: Light emitting element group

O1: Close the opening

PO:outline

PX: pixel

SP: sub-pixel

W1, W2: inner wall

Claims (20)

A light-emitting element array substrate, including: carrier board; A plurality of light-emitting element groups are arranged on the carrier board, and the plurality of light-emitting element groups respectively include a plurality of light-emitting elements; and An adhesive structure is located between the plurality of light-emitting element groups and the carrier board, and has a plurality of closed openings, The outer contours of the plurality of closed openings respectively surround the plurality of light-emitting element groups, the plurality of closed openings respectively have first inner walls, and there is a gap between the first inner wall and the plurality of light-emitting element groups. The minimum spacing is greater than or equal to the minimum spacing between the plurality of light-emitting elements. The light-emitting element array substrate of claim 1, wherein the distance between the plurality of closed openings is greater than zero and less than the minimum distance between the plurality of light-emitting element groups. The light-emitting element array substrate according to claim 1, wherein the number of light-emitting elements of the plurality of light-emitting element groups is not exactly the same. The light-emitting element array substrate of claim 1, wherein each of the plurality of light-emitting element groups includes at least one pixel, and the pixel includes at least three light-emitting elements. The light-emitting element array substrate of claim 1, wherein the number of light-emitting elements of the light-emitting element group located in the central area of the carrier board is greater than the number of light-emitting elements of the light-emitting element group located in the peripheral area of the carrier board. . The light-emitting element array substrate as claimed in claim 1 further includes a plurality of adhesive materials covering the plurality of light-emitting elements respectively. The light-emitting element array substrate of claim 1, wherein the plurality of closed openings have an annular polygonal outline, and the plurality of closed openings respectively surround the plurality of light-emitting element groups. The light-emitting element array substrate of claim 7, wherein the closed opening also has a second inner wall facing the surrounded light-emitting element group, and the first inner wall faces away from the surrounded The light-emitting element group is provided, and the first inner wall is opposite to the second inner wall. The light-emitting element array substrate of claim 7, wherein the depth of the closed opening is 5% to 100% of the thickness of the adhesive structure. The light-emitting element array substrate of claim 1, wherein the plurality of closed openings each have a polygonal outline, and the plurality of light-emitting element groups are respectively disposed in the plurality of closed openings. The light-emitting element array substrate of claim 10, wherein the depth of the closed opening is 5% to 90% of the thickness of the adhesive structure. The light-emitting element array substrate according to claim 10, wherein the light-emitting element includes a semiconductor stack, a first pad, a second pad and an insulating layer, and the first pad and the second pad are respectively electrically Sexually connected to different sub-layers in the semiconductor stack, the insulating layer is located between a portion of the first pad and a portion of the second pad and the semiconductor stack, and the insulating layer The distance between the surface away from the carrier plate and the carrier plate is not less than the total thickness of the adhesive structure. The light-emitting element array substrate of claim 10, wherein the adhesive structure includes a first part and a second part, the first part is located between the plurality of light-emitting element groups and the carrier board, and the second part Surrounding the closed opening, the first portion and the second portion are made of the same material. The light-emitting element array substrate of claim 10, wherein the adhesive structure includes a first part and a second part, the first part is located between the plurality of light-emitting element groups and the carrier board, and the second part Surrounding the closed opening, the first portion and the second portion are of different materials. A method for manufacturing a light-emitting element array substrate, including: Provide a first carrier board, a plurality of light-emitting element groups are configured on the first carrier board, and the plurality of light-emitting element groups respectively include a plurality of light-emitting elements; A second carrier is provided, and an adhesive structure is configured on the second carrier; forming a plurality of closed openings in the adhesive structure; and The plurality of light-emitting element groups are transferred from the first carrier board to the second carrier board, and the plurality of light-emitting element groups are respectively fixed to the respective outer contours of the plurality of closed openings. Adhesion structure. The manufacturing method of a light-emitting element array substrate as claimed in claim 15, wherein when the closed opening is an annular polygon, the plurality of light-emitting elements are transferred to the adhesive structure surrounded by the closed opening. The manufacturing method of a light-emitting element array substrate as claimed in claim 15, wherein when the closed opening is polygonal, the plurality of light-emitting elements are transferred into the closed opening. The manufacturing method of a light-emitting element array substrate according to claim 15, wherein when the closed opening is an annular polygon, forming the plurality of closed openings in the adhesive structure is to remove the plurality of light-emitting elements from The transfer of the first carrier plate to the second carrier plate is performed before or after. The manufacturing method of a light-emitting element array substrate as claimed in claim 15, wherein the plurality of light-emitting elements are fixed to the first carrier board through an adhesive material. The method of manufacturing a light-emitting element array substrate according to claim 19, further comprising removing the adhesive material after transferring the plurality of light-emitting elements from the first carrier to the second carrier.

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