CN115763349A - Light-emitting panel - Google Patents

Abstract

The invention discloses a light-emitting panel, which comprises a temporary storage substrate, a supporting pattern layer, an adhesion pattern layer and a plurality of light-emitting elements. The support pattern layer is arranged on the temporary storage substrate and is provided with a plurality of openings. The adhesion pattern layer is arranged on the support pattern layer and is provided with a plurality of openings. The openings of the adhesion pattern layer are respectively overlapped with the openings of the support pattern layer. The light emitting elements are respectively arranged in the openings of the adhesion pattern layer. Each light-emitting element comprises a first semiconductor layer, a second semiconductor layer, an active layer arranged between the first semiconductor layer and the second semiconductor layer and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer respectively, wherein the plurality of electrodes are positioned between the active layer and the temporary storage substrate, and an air gap is formed between the plurality of electrodes and the temporary storage substrate. In addition, other various light emitting panels have been proposed.

Description

Light-emitting panel

Technical Field

The present invention relates to a light emitting panel.

Background

The light emitting diode display panel comprises a driving backboard and a plurality of light emitting diode elements which are transposed on the driving backboard. The characteristics of the light emitting diode are inherited, and the light emitting diode display panel has the advantages of electricity saving, high efficiency, high brightness, quick response time and the like. In addition, compared with the organic light emitting diode display panel, the light emitting diode display panel also has the advantages of easy color adjustment, long light emitting life, no image branding and the like. Therefore, the led display panel is considered as the next generation display technology.

In the manufacturing process of the led display panel, a large number of led devices on the temporary storage substrate need to be transferred to the driving backplane, and the electrodes of the led devices are electrically connected to the pads of the driving backplane. Before transferring a large number of led elements to the driving backplane, the adhesive structures on the led elements need to be removed to expose the electrodes of the led elements. However, the adhesion structure is liable to remain on the led device, thereby causing poor bonding between the led device and the driving backplane. If a severe dry etching process condition is used to clean the adhesion structure, the led device may be damaged and cracked during the dry etching process.

Disclosure of Invention

The invention provides a light-emitting panel with high manufacturing yield.

The invention provides another light-emitting panel with high manufacturing yield.

The invention provides another light-emitting panel with high manufacturing yield.

The light-emitting panel of an embodiment of the invention comprises a temporary storage substrate, a supporting pattern layer, an adhesion pattern layer and a plurality of light-emitting elements. The support pattern layer is disposed on the temporary storage substrate and has a plurality of openings. The adhesion pattern layer is arranged on the support pattern layer and is provided with a plurality of openings. The openings of the adhesion pattern layer are respectively overlapped with the openings of the support pattern layer. The light emitting elements are respectively arranged in the openings of the adhesion pattern layer. Each light-emitting element comprises a first semiconductor layer, a second semiconductor layer, an active (active) layer arranged between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer respectively, wherein the plurality of electrodes are positioned between the active layer and the temporary storage substrate, and an air gap is formed between the plurality of electrodes and the temporary storage substrate.

The light-emitting panel of another embodiment of the invention comprises a temporary storage substrate, an adhesive layer, a plurality of light-emitting elements and a plurality of adhesive patterns. The adhesion layer is arranged on the temporary storage substrate. The plurality of light-emitting elements are arranged on the adhesive layer. The plurality of adhesion patterns are separated from each other and are respectively arranged on the plurality of light-emitting elements. Each light emitting element comprises a first semiconductor layer, a second semiconductor layer, an active layer arranged between the first semiconductor layer and the second semiconductor layer and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer respectively, wherein the active layer is positioned between the plurality of electrodes and one of a plurality of adhesion patterns, each adhesion pattern is provided with an opening, and the opening is overlapped with the plurality of electrodes of one of the plurality of light emitting elements.

The light-emitting panel of the further embodiment of the invention comprises a driving back plate, a plurality of light-emitting elements and a plurality of adhesion patterns. The driving back plate is provided with a plurality of contact pad groups. Each light-emitting element comprises a first semiconductor layer, a second semiconductor layer, an active layer arranged between the first semiconductor layer and the second semiconductor layer and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer respectively, and the plurality of electrodes of the plurality of light-emitting elements are electrically connected to the plurality of contact pad groups of the driving back plate. The plurality of adhesion patterns are separated from each other, are respectively arranged on the plurality of light-emitting elements and are positioned between the plurality of light-emitting elements and the driving back plate. Each of the adhesion patterns has an opening, and the opening overlaps with the plurality of electrodes of one of the plurality of light emitting elements.

Drawings

Fig. 1A to 1G are schematic cross-sectional views illustrating a manufacturing process of a light-emitting panel according to an embodiment of the invention;

FIGS. 2A to 2D are schematic cross-sectional views illustrating a process for fabricating a supporting pattern layer and an adhesion pattern layer according to an embodiment of the invention;

FIG. 3 is a schematic top view of a light emitting device, an adhesion pattern layer and a supporting pattern layer according to an embodiment of the invention;

FIG. 4 is a schematic top view of a mask according to an embodiment of the present invention.

Description of the symbols

10-1, 10-2, 10-3 light emitting panel

110. 400 temporary storage substrate

120 supporting the pattern layer

120' layer of support material

122. 132 entity

122' a first zone

122s, 132s, 360s side walls

124. 134 opening of the container

124' the second zone

130 sticking the pattern layer

130' adhesive material layer

132a Anchor part

132b a tether portion

136 sticking pattern

200 growth substrate

300 light emitting element

310 first semiconductor layer

320 second semiconductor layer

330 active (active) layer

340. 350 electrodes

350a, 360a outer surface

360 epitaxial layer

360s, sa sidewall

360s-1, 371 first part

360s-2, 373 second part

370 insulating layer

372. 374 contact window

500 adhesive layer

600 driving backboard

610 connecting pad group

612. 614 contact pad

AG air gap

H1 maximum height

Maximum thickness of H2

L1, L2, L3 laser

M mask

Ma light shielding part

Mb light transmission part

S semiconductor structure

I boundary

z is the direction

Detailed Description

Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.

It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physically and/or electrically connected. Further, "electrically connected" or "coupled" may mean that there are additional elements between the two elements.

As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within an acceptable range of deviation of the specified value as determined by one of ordinary skill in the art, taking into account the measurement in question and the specified amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ± 30%, ± 20%, ± 10%, ± 5%. Further, as used herein, "about", "approximately" or "substantially" may be selected based on optical properties, etch properties, or other properties, with a more acceptable range of deviation or standard deviation, and not all properties may be applied with one standard deviation.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Fig. 1A to fig. 1G are schematic cross-sectional views illustrating a manufacturing process of a light-emitting panel according to an embodiment of the invention.

Referring to fig. 1A, first, a temporary storage substrate 110, a supporting pattern layer 120 and an adhesion pattern layer 130 are provided. The supporting pattern layer 120 is disposed on the temporary storage substrate 110 and has a plurality of openings 124. The adhesion pattern layer 130 is disposed on the supporting pattern layer 120 and has a plurality of openings 134. The openings 134 of the adhesion pattern layer 130 are respectively overlapped with the openings 124 of the support pattern layer 120.

In detail, in the present embodiment, the supporting pattern layer 120 has a solid body 122, and a sidewall 122s of the solid body 122 defines an opening 124 of the supporting pattern layer 120; the adhesion pattern layer 130 has a solid 132, and the sidewall 132s of the solid 132 defines an opening 134 of the adhesion pattern layer 130; the solid 132 of the adhesion pattern layer 130 is disposed on the solid 122 of the support pattern layer 120 and slightly beyond the solid 122 of the support pattern layer 120, and the opening 134 of the adhesion pattern layer 130 is slightly smaller than the opening 124 of the support pattern layer 120.

In another aspect, in the present embodiment, the solid body 132 of the adhesion pattern layer 130 includes an anchor portion 132a and a plurality of tie portions 132b, a boundary I between the anchor portion 132a and the tie portions 132b is substantially aligned with the sidewall 122s of the supporting pattern layer 120, the anchor portion 132a is fixed on the solid body 122 of the supporting pattern layer 120, and the tie portions 132b are connected to the anchor portion 132a and respectively suspended on the openings 124 of the supporting pattern layer 120. For example, in the embodiment, the fastening portion 132b of the adhesive pattern layer 130 may be an annular adhesive pattern overlapped on the periphery of the opening 124 of the supporting pattern layer 120, but the invention is not limited thereto.

Fig. 2A to 2D are schematic cross-sectional views illustrating a manufacturing process of a supporting pattern layer and an adhesion pattern layer according to an embodiment of the invention. The following describes the manufacturing process of the supporting pattern layer 120 and the adhesion pattern layer 130 according to an embodiment of the invention with reference to fig. 2A to 2D.

Referring to fig. 2A, first, a temporary storage substrate 110 is provided. For example, in the embodiment, the temporary substrate 110 may be a sapphire substrate, but the invention is not limited thereto. Next, a supporting material layer 120 'is formed on the temporary storage substrate 110, wherein the supporting material layer 120' has a first region 122 'and a plurality of second regions 124', and each of the second regions 124 'is surrounded by the first region 122'.

Referring to fig. 2B, an adhesive material layer 130 'is formed on the supporting material layer 120'. The adhesive material layer 130 'entirely covers the support material layer 120'. Referring to fig. 2B and 2C, the adhesive material layer 130' is patterned to form an adhesive pattern layer 130. The anchor portion 132a of the solid 132 of the adhesion pattern layer 130 is disposed on the first region 122 'of the support material layer 120'. The plurality of tie portions 132b of the solid body 132 of the adhesion pattern layer 130 are connected to the anchor portions 132a and are respectively disposed on the peripheries of the plurality of second regions 124 'of the support material layer 120'. The adhesion pattern layer 130 has a plurality of openings 134 respectively overlapping the second regions 124 'of the support material layer 120'. In the embodiment, the adhesive material layer 130' may be patterned by using a photolithography process, but the invention is not limited thereto.

Referring to fig. 2C and fig. 2D, the second regions 124' of the supporting material layer 120' are removed and the first regions 122' are remained to form the supporting pattern layer 120, wherein the second regions 124' of the supporting material layer 120' are removed to form the openings 124 of the supporting pattern layer 120, and the remained first regions 122' of the supporting material layer 120' form the entities 122 of the supporting pattern layer 120.

In the present embodiment, the support material layer 120 'may be selectively patterned by using a wet etching process to form the support pattern layer 120, wherein the material properties of the first region 122' and the second region 124 'of the support material layer 120' are different, and the etching solution used in the wet etching process will attack the second region 124 'but not attack the first region 122'. For example, in the present embodiment, the material of the first region 122 'of the support material layer 120' may be silicon (111), and the material of the second region 124 'of the support material layer 120' may be silicon (110), but the invention is not limited thereto.

Referring to fig. 1A, a growth substrate 200 and a plurality of light emitting devices 300 formed on the growth substrate 200 are provided. Each light emitting device 300 includes a first semiconductor layer 310, a second semiconductor layer 320, an active layer 330 disposed between the first semiconductor layer 310 and the second semiconductor layer 320, and a plurality of electrodes 340 and 350 electrically connected to the first semiconductor layer 310 and the second semiconductor layer 320, respectively.

In the present embodiment, each light emitting device 300 may further optionally include an epitaxial layer 360, the first semiconductor layer 310 is formed on the epitaxial layer 360, the epitaxial layer 360 is located between the growth substrate 200 and the first semiconductor layer 310, and the first semiconductor layer 310 is located between the epitaxial layer 360 and the active layer 330. For example, in the present embodiment, the growth substrate 200 may be sapphire, the epitaxial layer 360 may be undoped gallium nitride, the first semiconductor layer 310 may be n-type gallium nitride, the active layer 330 may be a multiple quantum well layer, and the second semiconductor layer 320 may be p-type gallium nitride, but the invention is not limited thereto.

In the present embodiment, each of the light emitting devices 300 may further include an insulating layer 370, the insulating layer 370 is disposed on the second semiconductor layer 320 and has a plurality of contact windows 372 and 374 respectively overlapping the first semiconductor layer 310 and the second semiconductor layer 320, and the plurality of electrodes 340 and 350 are electrically connected to the first semiconductor layer 310 and the second semiconductor layer 320 through the plurality of contact windows 372 and 374 of the insulating layer 370.

Fig. 3 is a schematic top view of a light emitting device, an adhesion pattern layer and a supporting pattern layer according to an embodiment of the invention. The light emitting device 300, the adhesive pattern layer 130 and the supporting pattern layer 120 of fig. 3 may correspond to the light emitting device 300, the adhesive pattern layer 130 and the supporting pattern layer 120 of fig. 1A.

Referring to fig. 1A to fig. 1C and fig. 3, the light emitting device 300 is transferred from the growth substrate 200 onto the adhesion pattern layer 130 of the temporary storage substrate 110 to form the light emitting panel 10-1. Referring to fig. 1A, fig. 1B and fig. 3, in detail, the light emitting elements 300 may be disposed on the openings 134 of the adhesion pattern layer 130, respectively, so that the light emitting elements 300 are connected to the anchor portions 132a of the adhesion pattern layer 130, respectively; referring to fig. 1B and fig. 1C, the light emitting devices 300 are separated from the growth substrate 200. For example, in the present embodiment, the light emitting device 300 and the growth substrate 200 may be separated by using a laser lift-off process; the center wavelength of the laser light L1 used in the laser lift-off step is, for example, 266nm; however, the present invention is not limited thereto.

Referring to fig. 1C, the light emitting panel 10-1 includes, in addition to the temporary storage substrate 110, the supporting pattern layer 120 and the adhesion pattern layer 130, the light emitting panel 10-1 further includes a plurality of light emitting elements 300 respectively disposed in the plurality of openings 134 of the adhesion pattern layer 130, wherein a plurality of electrodes 340 and 350 of each light emitting element 300 are disposed between the active layer 330 and the temporary storage substrate 110. In particular, an air gap AG exists between the plurality of electrodes 340 and 350 of the light emitting device 300 and the temporary storage substrate 110. That is, the light emitting device 300 is adhered to the fastening portion 132b of the adhesive pattern layer 130 and hung on the opening 124 of the support pattern layer 120. The tie portion 132b of the adhesive pattern layer 130 is connected between the light emitting element 300 and the anchor portion 132a of the adhesive pattern layer 130. In the present embodiment, the tie portions 132b of the adhesive pattern layer 130 may surround the plurality of electrodes 340, 350 of the light emitting device 300.

In the present embodiment, the plurality of electrodes 340, 350 of each light emitting device 300 are in contact with the air gap AG. That is, the electrodes 340 and 350 of each light emitting device 300 are exposed outside the adhesive pattern layer 130. In the present embodiment, the insulating layer 370 of each light emitting device 300 includes a first portion 371, the first portion 371 of the insulating layer 370 is disposed on the second semiconductor layer 320 and between the plurality of electrodes 340 and 350, and the first portion 371 of the insulating layer 370 may contact the air gap AG. In the present embodiment, the insulating layer 370 of each light emitting device 300 further includes a second portion 373, the first semiconductor layer 310, the active layer 330 and the second semiconductor layer 320 are stacked to form a semiconductor structure S, the second portion 373 of the insulating layer 370 is disposed on the sidewall Sa of the semiconductor structure S, and the second portion 373 of the insulating layer 370 contacts the adhesive pattern layer 130.

In the present embodiment, the sidewall 360s of the epitaxial layer 360 of each light emitting device 300 includes a first portion 360s-1 and a second portion 360s-2, wherein the first portion 360s-1 of the sidewall 360s of the epitaxial layer 360 is located between the second portion 360s-2 of the sidewall 360s of the epitaxial layer 360 and the temporary storage substrate 110. In the present embodiment, a first portion 360s-1 of the sidewall 360s of the epitaxial layer 360 contacts the adhesion pattern layer 130, and a second portion 360s-2 of the sidewall 360s of the epitaxial layer 360 protrudes out of the adhesion pattern layer 130.

In the embodiment, each light emitting element 300 has a maximum height H1 in the direction z perpendicular to the temporary storage substrate 110, and the adhesive pattern layer 130 contacting the light emitting element 300 has a maximum thickness H2 in the direction z perpendicular to the temporary storage substrate 110, and is 0.06 ≦ H2/H1 ≦ 0.83. In the present embodiment, the maximum height H1 of each light emitting element 300 may refer to the distance from the outer surface 360a of the epitaxial layer 360 facing away from the temporary storage substrate 110 to the outer surface 350a of the electrode 350 facing the temporary storage substrate 110. In the present embodiment, the maximum thickness H2 of the adhesive pattern layer 130 may refer to the thickness of the adhesive pattern layer 130 disposed on the second portion 373 of the insulating layer 370 and the first portion 360s-1 of the sidewall 360s of the epitaxial layer 360.

Referring to fig. 1D, another temporary storage substrate 400 and an adhesive layer 500 disposed on the temporary storage substrate 400 are provided. In the embodiment, the adhesive layer 500 may cover the temporary storage substrate 400 entirely, but the invention is not limited thereto. Referring to fig. 1D and 1E, the light emitting device 300 on the temporary substrate 110 is then transferred to the adhesive layer 500 to form another light emitting panel 10-2.

FIG. 4 is a schematic top view of a mask according to an embodiment of the present invention. Referring to fig. 1D, 1E, 3 and 4, in the present embodiment, a mask M may be disposed on a path through which the laser light L2 travels toward the adhesive pattern layer 130, the mask M having a light shielding portion Ma and a light transmitting portion Mb outside the light shielding portion Ma, and the laser light L2 passes through the light transmitting portion Mb of the mask M to irradiate a boundary I between the anchor portions 132a and 132b of the adhesive pattern layer 130, so as to separate the anchor portions 132b and 132 a. After the tying portion 132b is separated from the anchor portion 132a, the tying portion 132b and the light emitting element 300 connected to the tying portion 132b may be transferred onto the adhesive layer 500, in which the tying portion 132b of the adhesive pattern layer 130 separated from the anchor portion 132a forms the adhesive pattern 136 of the light emitting panel 10-2.

In the present embodiment, when the anchor portion 132a and the tie portion 132b are separated by the laser light L2, the light shielding portion Ma of the mask M can shield the light emitting element 300, thereby preventing the laser light L2 from damaging the light emitting element 300. In the present embodiment, the central wavelength of the laser L2 is 248nm, for example, but the invention is not limited thereto.

Referring to fig. 1E, the light emitting panel 10-2 includes a temporary storage substrate 400, an adhesive layer 500 disposed on the temporary storage substrate 400, a plurality of light emitting devices 300 disposed on the adhesive layer 500, and a plurality of adhesive patterns 136 separated from each other and disposed on the plurality of light emitting devices 300, respectively. The active layer 330 of each light emitting device 300 is disposed between the plurality of electrodes 340, 350 and a corresponding one of the adhesion patterns 136. Each adhesion pattern 136 has an opening 134, and the opening 134 overlaps the plurality of electrodes 340 and 350 of a corresponding one of the light emitting elements 300.

In the present embodiment, each adhesion pattern 136 may surround the plurality of electrodes 340 and 350 of the corresponding light emitting device 300. In the present embodiment, the first portion 371 of the insulating layer 370 overlaps the opening 134 of the adhesive pattern 136. In the embodiment, the first portion 360s-1 of the sidewall 360s of the epitaxial layer 360 of the light emitting device 300 contacts the adhesion pattern 136, the second portion 360s-2 of the sidewall 360s of the epitaxial layer 360 is located between the first portion 360s-1 of the sidewall 360s of the epitaxial layer 360 and the temporary storage substrate 400, and the second portion 360s-2 of the sidewall 360s of the epitaxial layer 360 protrudes out of the adhesion pattern 136.

In the embodiment, each light emitting element 300 has a maximum height H1 in the direction z perpendicular to the temporary storage substrate 400, and the adhesion pattern 136 contacting the light emitting element 300 has a maximum thickness H2 in the direction z perpendicular to the temporary storage substrate 400, and is 0.06 ≦ H2/H1 ≦ 0.83. In the present embodiment, the maximum height H1 of each light emitting element 300 may refer to the distance from the outer surface 360a of the epitaxial layer 360 facing the temporary storage substrate 400 to the outer surface 350a of the electrode 350 facing away from the temporary storage substrate 400. In the present embodiment, the maximum thickness H2 of the adhesion pattern 136 may refer to the thickness of the adhesion pattern 136 disposed on the second portion 373 of the insulating layer 370 and the first portion 360s-1 of the sidewall 360s of the epitaxial layer 360.

Referring to fig. 1F and fig. 1G, the light emitting devices 300 on the temporary storage substrate 400 are transferred to the driving backplane 600, and the electrodes 340 and 350 of the light emitting devices 300 are electrically connected to the pad sets 610 of the driving backplane 600 to form the light emitting panel 10-3. The pad group 610 includes a plurality of pads 612 and 614 electrically connected to the plurality of electrodes 340 and 350 of the plurality of light emitting devices 300. In the present embodiment, the electrodes 340 and 350 of the light emitting device 300 and the pads 612 and 614 can be electrically connected by a laser bonding process. For example, in the embodiment, the central wavelength of the laser L3 used in the laser bonding process may be 1064nm, but the invention is not limited thereto.

Referring to fig. 1G, the light emitting panel 10-3 includes a driving back plate 600, a plurality of light emitting elements 300 and a plurality of adhesive patterns 136. The driving back plate 600 has a plurality of pad groups 610. The electrodes 340 and 350 of the light emitting elements 300 are electrically connected to the pad groups 610 of the driving back plate 600. The adhesion patterns 136 are separated from each other, respectively disposed on the light emitting elements 300, and located between the light emitting elements 300 and the driving back plate 600. Each adhesion pattern 136 has an opening 134, and the opening 134 overlaps the plurality of electrodes 340, 350 of the corresponding one of the light emitting elements 300.

In the present embodiment, each light emitting element 300 has a maximum height H1 in the direction z perpendicular to the driving back plate 600, the adhesive pattern 136 contacting the light emitting element 300 has a maximum thickness H2 in the direction z perpendicular to the driving back plate 600, and 0.06 ≦ (H2/H1) ≦ 0.83. In the present embodiment, the maximum height H1 of each light emitting element 300 may refer to the distance from the back surface of the epitaxial layer 360 to the outer surface 360a of the driving back plate 600 to the outer surface 350a of the electrode 350 facing the driving back plate 600. In the present embodiment, the maximum thickness H2 of the adhesion pattern 136 may refer to the thickness of the adhesion pattern 136 disposed on the second portion 373 of the insulating layer 370 and the first portion 360s-1 of the sidewall 360s of the epitaxial layer 360.

It should be noted that, as shown in fig. 1C, an air gap AG exists between the electrodes 340 and 350 of the light emitting device 300 and the temporary storage substrate 110. That is, the light emitting device 300 is suspended on the tie portion 132b of the adhesive pattern layer 130, and the electrodes 340 and 350 of the light emitting device 300 are not covered by the adhesive pattern layer 130. Therefore, as shown in fig. 1C to fig. 1E, when the light emitting device 300 is transferred to another temporary substrate 400, the adhesion pattern layer 130 does not remain on the electrodes 340 and 350 of the light emitting device 300. As shown in fig. 1E to 1G, even if the adhesive pattern 136 disposed around the light emitting device 300 is not selectively removed, the electrodes 340 and 350 of the light emitting device 300 are still exposed, and thus can be well bonded to the pads 612 and 614 of the driving back plate 600. Thus, the manufacturing yield of the light emitting panel 10-3 can be significantly improved.

Claims (20)

1. A light-emitting panel comprising:

temporarily storing the substrate;

the support pattern layer is arranged on the temporary storage substrate and is provided with a plurality of openings;

the adhesive pattern layer is arranged on the support pattern layer and is provided with a plurality of openings, wherein the openings of the adhesive pattern layer are respectively overlapped with the openings of the support pattern layer; and

and a plurality of light emitting elements respectively arranged in the openings of the adhesion pattern layer, wherein each light emitting element comprises a first semiconductor layer, a second semiconductor layer, an active layer arranged between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer respectively, the electrodes are positioned between the active layer and the temporary storage substrate, and air gaps are formed between the electrodes and the temporary storage substrate.

2. The light-emitting panel of claim 1, wherein the electrodes of each of the light-emitting elements are in contact with the air gap.

3. The light-emitting panel according to claim 1, wherein each of the light-emitting elements further comprises an insulating layer disposed on the second semiconductor layer and having a plurality of contact windows respectively overlapping the first semiconductor layer and the second semiconductor layer, the electrodes being electrically connected to the first semiconductor layer and the second semiconductor layer through the contact windows of the insulating layer, respectively; the insulating layer is provided with a first part, is arranged on the second semiconductor layer and is positioned between the electrodes; the first portion of the insulating layer is in contact with the air gap.

4. The light-emitting panel of claim 1, wherein each of the light-emitting elements further comprises an epitaxial layer, the first semiconductor layer is located between the epitaxial layer and the active layer, and a first portion of a sidewall of the epitaxial layer contacts the adhesion pattern layer.

5. The light-emitting panel of claim 4, wherein the first portion of the sidewall of the epitaxial layer is located between the second portion of the sidewall of the epitaxial layer and the temporary storage substrate, and the second portion of the sidewall of the epitaxial layer protrudes out of the adhesion pattern layer.

6. The light-emitting panel of claim 1, wherein each of the light-emitting elements has a maximum height H1 in a direction perpendicular to the temporary substrate, the adhesion pattern layer in contact with the light-emitting element has a maximum thickness H2 in the direction perpendicular to the temporary substrate, and 0.06 ≦ (H2/H1) ≦ 0.83.

7. The luminescent panel according to claim 1, wherein the support pattern layer further has a solid body, the solid body of the support pattern layer having sidewalls defining the openings of the support pattern layer; the adhesion pattern layer is also provided with an anchor part which is fixed on the entity of the support pattern layer; the adhesive pattern layer is also provided with a plurality of tying parts which are connected with the anchoring parts and respectively hung on the openings of the supporting pattern layer; the tie portions of the adhesive pattern layer are connected between the light emitting elements and the anchor portions of the adhesive pattern layer.

8. The light-emitting panel according to claim 7, wherein each of the plurality of portions of the adhesive pattern layer surrounds the plurality of electrodes of one of the plurality of light-emitting elements.

9. A light-emitting panel comprising:

temporarily storing the substrate;

the adhesive layer is arranged on the temporary storage substrate;

a plurality of light emitting elements disposed on the adhesive layer; and

and a plurality of adhesive patterns separated from each other and respectively disposed on the light emitting elements, wherein each light emitting element includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, the active layer is disposed between the electrodes and one of the adhesive patterns, each adhesive pattern has an opening, and the opening overlaps the electrodes of one of the light emitting elements.

10. The luminescent panel of claim 9, wherein the adhesion pattern surrounds the electrodes of the one of the light emitting elements.

11. The light-emitting panel according to claim 9, wherein each of the light-emitting elements further comprises an insulating layer disposed on the second semiconductor layer and having a plurality of contact windows respectively overlapping the first semiconductor layer and the second semiconductor layer, the electrodes being electrically connected to the first semiconductor layer and the second semiconductor layer through the contact windows of the insulating layer, respectively; the insulating layer is provided with a first part, is arranged on the second semiconductor layer and is positioned between the electrodes; the first portion of the insulating layer overlaps the opening of one of the adhesive patterns.

12. The light-emitting panel of claim 9, wherein each of the light-emitting elements further comprises an epitaxial layer, the first semiconductor layer is between the epitaxial layer and the active layer, and a first portion of a sidewall of the epitaxial layer contacts one of the adhesion patterns.

13. The light-emitting panel of claim 12, wherein a second portion of the sidewall of the epitaxial layer is located between the first portion of the sidewall of the epitaxial layer and the temporary storage substrate, and the second portion of the sidewall of the epitaxial layer protrudes beyond the one of the plurality of adhesion patterns.

14. The luminescent panel of claim 9, wherein each of the light emitting elements has a maximum height H1 in a direction perpendicular to the temporary substrate, one of the adhesion patterns contacting the light emitting element has a maximum thickness H2 in the direction perpendicular to the temporary substrate, and 0.06 ≦ (H2/H1) ≦ 0.83.

15. A light-emitting panel comprising:

a driving back plate having a plurality of contact pad sets;

a plurality of light emitting elements, wherein each light emitting element comprises a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, and the electrodes of the light emitting elements are electrically connected to the pad sets of the driving back plate; and

and a plurality of adhesion patterns which are separated from each other, are respectively arranged on the light-emitting elements and are positioned between the light-emitting elements and the driving backboard, wherein each adhesion pattern is provided with an opening, and the opening is overlapped with the electrodes of one of the light-emitting elements.

16. The luminescent panel of claim 15, wherein the adhesion pattern surrounds the electrodes of the one of the light emitting elements.

17. The light-emitting panel according to claim 15, wherein each of the light-emitting elements further comprises an insulating layer disposed on the second semiconductor layer and having a plurality of contact windows respectively overlapping the first semiconductor layer and the second semiconductor layer, the electrodes being electrically connected to the first semiconductor layer and the second semiconductor layer through the contact windows of the insulating layer, respectively; the insulating layer is provided with a first part, is arranged on the second semiconductor layer and is positioned between the electrodes; the first portion of the insulating layer overlaps the opening of one of the adhesive patterns.

18. The light-emitting panel of claim 15, wherein each of the light-emitting elements further comprises an epitaxial layer, the first semiconductor layer is between the epitaxial layer and the active layer, and a first portion of a sidewall of the epitaxial layer contacts one of the adhesion patterns.

19. The luminescent panel of claim 18, wherein a second portion of the sidewall of the epitaxial layer is located between the first portion of the sidewall of the epitaxial layer and the driving back plate, and the second portion of the sidewall of the epitaxial layer protrudes beyond the one of the adhesion patterns.

20. The light-emitting panel of claim 15, wherein each of the light-emitting elements has a maximum height H1 in a direction perpendicular to the driving back plate, one of the adhesion patterns contacting the light-emitting element has a maximum thickness H2 in the direction perpendicular to the driving back plate, and 0.06 ≦ (H2/H1) ≦ 0.83.

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