TWM602722U - Mass transfer fixture of micro-LED - Google Patents
Mass transfer fixture of micro-LED Download PDFInfo
- Publication number
- TWM602722U TWM602722U TW109205468U TW109205468U TWM602722U TW M602722 U TWM602722 U TW M602722U TW 109205468 U TW109205468 U TW 109205468U TW 109205468 U TW109205468 U TW 109205468U TW M602722 U TWM602722 U TW M602722U
- Authority
- TW
- Taiwan
- Prior art keywords
- mass transfer
- soft
- emitting diode
- bumps
- transfer jig
- Prior art date
Links
Images
Landscapes
- Led Device Packages (AREA)
Abstract
一種微型發光二極體巨量轉移治具,包含軟膠基板及位於軟膠基板上的巨量轉移區。巨量轉移區包含複數個軟膠黏附凸塊、複數個第一分隔壁及複數個第二分隔壁。軟膠黏附凸塊位於軟膠基板的承載表面上。第一分隔壁位於軟膠基板的承載表面上,沿著第一方向延伸,並連接於兩個黏附凸塊之間。第一分隔壁的高度低於軟膠黏附凸塊。第二分隔壁位於軟膠基板的承載表面上,沿著第二方向延伸,並連接於兩個黏附凸塊之間,第二分隔壁的高度低於軟膠黏附凸塊,其中第一方向實質上垂直於第二方向,且軟膠黏附凸塊、第一分隔壁、或第二分隔壁的剖面呈梯型。 A miniature light-emitting diode mass transfer jig includes a soft rubber substrate and a huge transfer area on the soft rubber substrate. The mass transfer area includes a plurality of soft glue adhesion bumps, a plurality of first partition walls and a plurality of second partition walls. The soft adhesive bumps are located on the carrying surface of the soft adhesive substrate. The first partition wall is located on the carrying surface of the soft rubber substrate, extends along the first direction, and is connected between the two adhesion bumps. The height of the first partition wall is lower than the soft glue adhesion bump. The second partition wall is located on the carrying surface of the soft plastic substrate, extends along the second direction, and is connected between the two adhesive bumps. The height of the second partition wall is lower than the soft adhesive bump, and the first direction is substantially The upper side is perpendicular to the second direction, and the cross section of the soft glue adhesion bump, the first partition wall, or the second partition wall is trapezoidal.
Description
本創作涉及顯示器領域,尤其是一種微型發光二極體巨量轉移治具。This creation relates to the field of displays, especially a miniature light-emitting diode mass transfer fixture.
在顯示器的領域上,現行商業化的顯示技術包含液晶顯示器(LiquidCrystalDisplay,LCD)以及有機發光二極體(OrganicLightEmittingDiode)顯示器。然而,其各有優缺點。LCD顯示器需要背光模組,整體的厚度較厚、色彩飽和度較差,且較為耗電。但因其製程已經標準化、量產化,整體得成本較低。OLED顯示器則因為其以主動式的發光,色彩飽和度高、省電,且可撓區,成為新一代可攜式電子裝置的新選擇。唯,OLED顯示器本質為有機元件,其材料有衰退的現象,且容易在長時間顯示後,呈現「烙印」的現象。In the field of displays, current commercial display technologies include liquid crystal displays (Liquid Crystal Display, LCD) and organic light emitting diode (Organic Light Emitting Diode) displays. However, each has its advantages and disadvantages. The LCD display needs a backlight module, which has a thicker overall thickness, poor color saturation, and consumes more power. But because its manufacturing process has been standardized and mass-produced, the overall cost is lower. OLED displays have become a new choice for a new generation of portable electronic devices because of their active luminescence, high color saturation, power saving, and flexible area. However, OLED displays are organic components in nature, and their materials are degraded, and they are prone to "burn in" after a long display.
為了解決前述的問題,現有的方式是採用無機的LED,將其縮小尺寸,以陣列的排列方式設置於基板上,以主動發光的方式,達到色彩高飽和度、省電、厚度低的效果。然而,現行的問題在於將製作完成的無機的LED,轉移到基板的巨量轉移過程。In order to solve the aforementioned problems, the existing method is to use inorganic LEDs, reduce the size, arrange them on the substrate in an array arrangement, and actively emit light to achieve the effects of high color saturation, power saving, and low thickness. However, the current problem lies in the mass transfer process of transferring the finished inorganic LED to the substrate.
現行上miniLED的巨量轉移過程,是將miniLED的晶圓,切割後,將晶圓倒置於具有為黏性的載具上,再透過轉移治具轉移到電路基板上,接著加熱產生共晶並脫離。在載具上之晶粒的分布,是對應於各個廠商在晶圓的晶粒佈局(layout)。由於各家廠商的晶粒布局均不相同,現行的轉移治具是透過壓模的方式來製作,必須對應不同的晶粒佈局(layout)都需要重新開模、成本較高。對於軟膠材料,以壓印的方式可能因為物質的回彈、材料受熱的損傷,而造成在黏性、或是整個治具的精度不佳。The current mass transfer process of miniLEDs is to cut the wafers of miniLEDs, place the wafers upside down on a viscous carrier, and then transfer them to the circuit board through a transfer jig, and then heat to produce a eutectic. Break away. The distribution of the die on the carrier corresponds to the die layout of each manufacturer on the wafer. Since the die layouts of various manufacturers are different, the current transfer jig is manufactured through a compression molding method, which must correspond to different die layouts, which requires re-molding, and the cost is high. For soft plastic materials, the embossing method may cause poor adhesion or poor accuracy of the entire fixture due to the rebound of the material and the damage of the material by heat.
在此,提供一種微型發光二極體巨量轉移治具。微型發光二極體巨量轉移治具是透過雷射切割軟膠材料的方式製作。微型發光二極體巨量轉移治具包含軟膠基板及位於軟膠基板上的巨量轉移區。巨量轉移區包含複數個軟膠黏附凸塊、複數個第一分隔壁及複數個第二分隔壁。軟膠黏附凸塊位於軟膠基板的承載表面上。第一分隔壁位於軟膠基板的承載表面上,沿著第一方向延伸,並連接於兩個黏附凸塊之間。第一分隔壁的高度低於軟膠黏附凸塊。第二分隔壁位於軟膠基板的承載表面上,沿著第二方向延伸,並連接於兩個黏附凸塊之間,第二分隔壁的高度低於軟膠黏附凸塊,其中第一方向實質上垂直於第二方向,且軟膠黏附凸塊、第一分隔壁、或第二分隔壁的剖面呈梯型。Here, a miniature light emitting diode mass transfer jig is provided. The miniature light-emitting diode mass transfer jig is made by laser cutting soft plastic materials. The miniature light-emitting diode mass transfer jig includes a soft rubber substrate and a mass transfer area on the soft rubber substrate. The mass transfer area includes a plurality of soft glue adhesion bumps, a plurality of first partition walls and a plurality of second partition walls. The soft adhesive bumps are located on the carrying surface of the soft adhesive substrate. The first partition wall is located on the carrying surface of the soft rubber substrate, extends along the first direction, and is connected between the two adhesion bumps. The height of the first partition wall is lower than the soft glue adhesion bump. The second partition wall is located on the carrying surface of the soft plastic substrate, extends along the second direction, and is connected between the two adhesive bumps. The height of the second partition wall is lower than the soft adhesive bump, and the first direction is substantially The upper side is perpendicular to the second direction, and the cross section of the soft glue adhesion bump, the first partition wall, or the second partition wall is trapezoidal.
在一些實施例中,梯形包含至少一圓弧導角。In some embodiments, the trapezoid includes at least one arc angle.
在一些實施例中,梯形與承載表面的夾角為50至90度。In some embodiments, the angle between the trapezoid and the bearing surface is 50 to 90 degrees.
在一些實施例中,第一分隔壁的頂面與軟膠基板的承載表面的高度差為10至60um。In some embodiments, the height difference between the top surface of the first partition wall and the carrying surface of the soft rubber substrate is 10 to 60 um.
在一些實施例中,第二分隔壁的頂面與軟膠基板的承載表面的高度差為10至60um。In some embodiments, the height difference between the top surface of the second partition wall and the carrying surface of the soft rubber substrate is 10-60 um.
在一些實施例中,軟膠黏附凸塊的頂面與軟膠基板的承載表面的高度差為40至120um。較佳地,軟膠黏附凸塊的頂面與軟膠基板的承載表面的高度差為60至100um。In some embodiments, the height difference between the top surface of the soft adhesive bump and the carrying surface of the soft adhesive substrate is 40 to 120 um. Preferably, the height difference between the top surface of the soft adhesive bump and the carrying surface of the soft adhesive substrate is 60 to 100 um.
在一些實施例中,微型發光二極體巨量轉移治具,更包含外框區,外框區位於巨量轉移區的外周緣,外框區的高度低於軟膠黏附凸塊,並高於承載表面。In some embodiments, the miniature light-emitting diode mass transfer jig further includes an outer frame area, the outer frame area is located at the outer periphery of the mass transfer area, and the height of the outer frame area is lower than that of the soft glue adhesion bump and is higher On the bearing surface.
在一些實施例中,巨量轉移區包含連續排列之複數個陣列圖案,各陣列圖案由四個軟膠黏附凸塊、二個第一分隔壁、以及二個二分隔壁所組成,且各陣列圖案圍設承載表面的一部分。進一步地,陣列圖案中圍設的承載表面為一粗糙表面,其粗糙的高低落差在2至10um。In some embodiments, the mass transfer area includes a plurality of array patterns continuously arranged, and each array pattern is composed of four soft adhesive bumps, two first partition walls, and two second partition walls, and each array pattern Enclose part of the bearing surface. Further, the bearing surface enclosed in the array pattern is a rough surface, and the roughness height difference is 2-10um.
前述實施例中,微型發光二極體巨量轉移治具係透過雷射切割的方式,在軟膠基板直接形成巨量轉移區,在軟膠黏附凸塊、第一分隔壁、及第二分隔壁的剖面呈梯型,用以使得轉移微型發光二極體後提供更方便地脫離。如此,巨量轉移區能夠配合晶粒載具上微型發光二極體上的晶粒佈線,來客製化地完成微型發光二極體巨量轉移治具,無須針對各個晶粒佈線進行開模,在進行轉印,可大幅地降低製作成本。In the foregoing embodiment, the micro-light-emitting diode mass transfer jig is formed by laser cutting to directly form the mass transfer area on the soft plastic substrate, and the bumps, the first partition wall, and the second partition are adhered to the soft plastic substrate. The cross section of the partition wall is in a trapezoidal shape, so that the micro light emitting diode can be easily separated after transferring. In this way, the mass transfer area can be matched with the die wiring on the micro light emitting diode on the die carrier to customize the micro light emitting diode mass transfer jig without opening the mold for each die wiring. During transfer, the production cost can be greatly reduced.
圖1係微型發光二極體巨量轉移治具的俯視圖。圖2係微型發光二極體巨量轉移治具的局部立體圖。圖3係圖1之3-3剖面的剖視圖。圖4係圖1之4-4剖面的剖視圖。圖5係圖1之5-5剖面的剖視圖。如圖1至圖5所示,微型發光二極體巨量轉移治具1包含軟膠基板10及位於軟膠基板10上的巨量轉移區20。巨量轉移區20包含複數個軟膠黏附凸塊21、複數個第一分隔壁23及複數個第二分隔壁25。軟膠黏附凸塊21位於軟膠基板10的承載表面11上。第一分隔壁23位於軟膠基板10的承載表面11上,沿著第一方向A1延伸,並連接於兩個軟膠黏附凸塊21之間。第一分隔壁23的高度低於軟膠黏附凸塊21。第二分隔壁25位於軟膠基板10的承載表面11上,沿著第二方向A2延伸,並連接於兩個軟膠黏附凸塊21之間,第二分隔壁25的高度低於軟膠黏附凸塊21,其中第一方向A1實質上垂直於第二方向A2,且軟膠黏附凸塊21、第一分隔壁23、或第二分隔壁25的剖面呈梯型。Figure 1 is a top view of a miniature light-emitting diode mass transfer fixture. Figure 2 is a partial three-dimensional view of a miniature light-emitting diode mass transfer jig. Figure 3 is a cross-sectional view of the section 3-3 of Figure 1; Figure 4 is a cross-sectional view of section 4-4 of Figure 1; Figure 5 is a cross-sectional view of section 5-5 of Figure 1; As shown in FIGS. 1 to 5, the micro light emitting diode mass transfer jig 1 includes a
微型發光二極體巨量轉移治具1是透過雷射切割軟膠材料的方式製作,整個微型發光二極體巨量轉移治具1實際為同一軟膠體,可以因應不同得晶粒佈局來設計軟膠黏附凸塊21的位置。另外,因此,可以有效控制軟膠黏附凸塊21、第一分隔壁23、或第二分隔壁25的形狀,透過控制雷射能量的方式,使得邊緣呈梯型,而使得控制軟膠黏附凸塊21轉移後,因為有空氣間隙,施壓後易於脫離治具而完成轉移。The miniature light-emitting diode mass transfer jig 1 is made by laser cutting soft plastic materials. The entire miniature light-emitting diode mass transfer jig 1 is actually the same soft gel, which can be designed according to different die layouts. The soft glue sticks to the position of the
一般來說,巨量轉移區20包含連續排列之複數個陣列圖案,各陣列圖案S由四個軟膠黏附凸塊21、二個第一分隔壁23、以及二個第二分隔壁25所組成,且各陣列圖案S圍設承載表面11的一部分。軟膠黏附凸塊21可以對應不同晶粒佈局上微型發光二極體(MicroLED)的位置設置,而透過第一分隔壁23及第二分隔壁25的連接,有效達到支持、避免變形的方式。Generally speaking, the
由於軟膠黏附凸塊21、第一分隔壁23、或第二分隔壁25的邊緣可以透過降低雷射能量(約降至30-50%)來切割,除了可以確保邊緣的形狀外,更可以避免雷射切割的粉塵碎屑殘留在軟膠黏附凸塊21上。Since the edge of the soft
進一步地,由於採雷射切割,雷射源以點狀對焦,由於切割時的焦距可能變化,陣列圖案S中圍設的承載表面11為粗糙表面,其粗糙的高低落差在2至10um。這也是雷射切割造成的主要特徵。Further, due to laser cutting, the laser source is focused in a point-like manner. Since the focal length during cutting may change, the
更詳細地,在一些實施例中,軟膠黏附凸塊21之剖面梯形與承載表面11的夾角θ
1、第一分隔壁23之剖面梯形與承載表面11的夾角θ
2、或第二分隔壁25之剖面梯形與承載表面11的夾角θ
3可以為50至90度,較佳地,為60至75度。進一步地,梯形可以具有圓弧導角。
In more detail, in some embodiments, a trapezoidal cross-sectional
另外,軟膠黏附凸塊21的頂面與軟膠基板10的承載表面11的高度差為40至120um,較佳地為60至100um,更較佳為75至90um。另外,第一分隔壁23的頂面與軟膠基板10的承載表面11的高度差為10至60um、第二分隔壁23的頂面與軟膠基板10的承載表面11的高度差為10至60um。較佳地,軟膠黏附凸塊21與第一分隔壁23或第二分隔壁25的高度差較佳為20um至60um,更較佳為20至30um、或40至50um。如此,能避免第一分隔壁23或第二分隔壁25黏附到其他的微型發光二極體,同時提供軟膠黏附凸塊21的支持強度。In addition, the height difference between the top surface of the soft
再次參閱圖1,微型發光二極體巨量轉移治具1更包含外框區30,外框區30位於巨量轉移區20的外周緣,外框區30的高度低於軟膠黏附凸塊21,並高於承載表面11。透過外框區30能對於巨量轉移區20與晶粒載具500或電路基板600相互定位,同時以雷射切割降低外框區30的高度,也可以避免外框區30在移動時黏附到其他的微型發光二極體550(參見圖6)。1 again, the miniature light-emitting diode mass transfer jig 1 further includes an
圖6係微型發光二極體巨量轉移治具的使用狀態示意圖。如圖6所示,微型發光二極體巨量轉移治具1係用以轉移晶粒載具500上的微型發光二極體550至電路基板600上,微型發光二極體巨量轉移治具1可以安裝於機械手臂800上,微型發光二極體巨量轉移治具1上的軟膠黏附凸塊21係對應晶粒載具500上之微型發光二極體550的位置,微型發光二極體巨量轉移治具1的外框區30還可以做為與晶粒載具500及/或電路基板600相互定位之用途,完成定位後,以黏附的方式將微型發光二極體550由晶粒載具500中提取出,再轉移到電路基板600上,再加壓、或以熱壓方式使得微型發光二極體550在電路基板600形成共晶而固定。最後再施壓使得微型發光二極體550與微型發光二極體巨量轉移治具1分離。而達到批次微型發光二極體550的巨量轉移。Fig. 6 is a schematic diagram of the use state of the miniature light-emitting diode mass transfer jig. As shown in FIG. 6, the micro-light-emitting diode mass transfer jig 1 is used to transfer the micro-light-emitting
綜上所述,微型發光二極體巨量轉移治具1係透過雷射切割的方式,在軟膠基板10直接形成巨量轉移區20,在軟膠黏附凸塊21、第一分隔壁23、及第二分隔壁25的剖面呈梯型,用以使得轉移微型發光二極體550後提供更方便地脫離。如此,巨量轉移區20能夠配合晶粒載具500上之微型發光二極體550的晶粒佈局,來客製化地完成微型發光二極體巨量轉移治具1,無須針對各種晶粒佈線進行開模,再進行轉印,可大幅地降低製作成本。In summary, the micro-light-emitting diode mass transfer jig 1 uses laser cutting to directly form the
雖然本創作的技術內容已經以較佳實施例揭露如上,然其並非用以限定本創作,任何熟習此技藝者,在不脫離本創作之精神所作些許之更動與潤飾,皆應涵蓋於本創作的範疇內,因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。Although the technical content of this creation has been disclosed in a preferred embodiment as above, it is not intended to limit this creation. Anyone who is familiar with this technique, who does not deviate from the spirit of this creation, makes some changes and modifications, should be covered in this creation Therefore, the scope of protection of this creation shall be subject to the scope of the attached patent application.
1:微型發光二極體巨量轉移治具 10:軟膠基板 11:承載表面 20:巨量轉移區 21:軟膠黏附凸塊 23:第一分隔壁 25:第二分隔壁 30:外框區 500:晶粒載具 550:微型發光二極體 600:電路基板 800:機械手臂 θ1:夾角 θ2:夾角 θ3:夾角 A1:第一方向 A2:第二方向 S:陣列圖案 1: Miniature LED Mass Transfer Fixture 10: Soft substrate 11: Bearing surface 20: Mass transfer area 21: Soft glue adhesion bump 23: The first dividing wall 25: The second dividing wall 30: Outer frame area 500: Die Carrier 550: Miniature LED 600: Circuit board 800: robotic arm θ1: included angle θ2: included angle θ3: included angle A1: First direction A2: Second direction S: array pattern
[圖1]係微型發光二極體巨量轉移治具的俯視圖。 [圖2]係微型發光二極體巨量轉移治具的局部立體圖。 [圖3]係圖1之3-3剖面的剖視圖。 [圖4]係圖1之4-4剖面的剖視圖。 [圖5]係圖1之5-5剖面的剖視圖。 [圖6]係微型發光二極體巨量轉移治具的使用狀態示意圖。 [Figure 1] A top view of a miniature light-emitting diode mass transfer jig. [Figure 2] A partial three-dimensional view of a miniature light-emitting diode mass transfer jig. [Fig. 3] is a cross-sectional view of the 3-3 section of Fig. 1. [Fig. 4] is a cross-sectional view of the 4-4 section of Fig. 1. [Fig. 5] is a cross-sectional view of the section 5-5 of Fig. 1. [Figure 6] is a schematic diagram of the state of use of the miniature light-emitting diode mass transfer jig.
10:軟膠基板 10: Soft substrate
11:承載表面 11: Bearing surface
21:軟膠黏附凸塊 21: Soft glue adhesion bump
23:第一分隔壁 23: The first dividing wall
25:第二分隔壁 25: The second dividing wall
A1:第一方向 A1: First direction
A2:第二方向 A2: Second direction
S:陣列圖案 S: array pattern
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109205468U TWM602722U (en) | 2020-05-06 | 2020-05-06 | Mass transfer fixture of micro-LED |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109205468U TWM602722U (en) | 2020-05-06 | 2020-05-06 | Mass transfer fixture of micro-LED |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM602722U true TWM602722U (en) | 2020-10-11 |
Family
ID=74095324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109205468U TWM602722U (en) | 2020-05-06 | 2020-05-06 | Mass transfer fixture of micro-LED |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWM602722U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI804377B (en) * | 2022-04-01 | 2023-06-01 | 友達光電股份有限公司 | Transferring module |
-
2020
- 2020-05-06 TW TW109205468U patent/TWM602722U/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI804377B (en) * | 2022-04-01 | 2023-06-01 | 友達光電股份有限公司 | Transferring module |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI489656B (en) | Light emitting diode, manufacturing method thereof, light emitting diode module, and manufacturing method thereof | |
US10741608B2 (en) | Manufacturing method of micro light-emitting diode display panel | |
JP4754850B2 (en) | Manufacturing method of LED mounting module and manufacturing method of LED module | |
TW201635591A (en) | Edge lighting light emitting diode structure and method of manufacturing the same | |
US20120025214A1 (en) | Led packaging structure and packaging method | |
US20110121341A1 (en) | Light emitting apparatus | |
US10600941B2 (en) | Electronic device and method for fabricating the same | |
US8342703B2 (en) | Light emitting apparatus | |
TWM602722U (en) | Mass transfer fixture of micro-LED | |
CN114334935A (en) | LED backlight source and manufacturing method thereof | |
CN203433750U (en) | LED display unit module | |
KR101140081B1 (en) | LED Package and Manufacturing Method thereof | |
TWI726648B (en) | Pixel array substrate and method of fabricating the same | |
CN114334925A (en) | Method for repairing light-emitting chip after glue sealing and display panel | |
CN112201736A (en) | MiniLED matrix backlight board, manufacturing method thereof and notebook computer | |
CN206036727U (en) | High -efficient integrated MLCOB light source module | |
KR100742225B1 (en) | A high brightness light emitting diode and its method of making | |
CN203799604U (en) | LED display unit module with enhanced heat dissipation performance | |
TWI744016B (en) | LED luminous source device and manufacturing method thereof | |
TWI771986B (en) | A method of manufacturing an electronic device | |
CN114141935B (en) | LED (light-emitting diode) sealing method and LED chip | |
CN219800891U (en) | High light-transmitting type LED packaging substrate and packaging structure | |
CN203760011U (en) | Semiconductor display unit based on lamination baseboard with integrated display and control | |
CN114220896B (en) | Flip chip packaging process and flip chip packaging structure | |
CN117108945A (en) | Sealing device and method for Mini LED lamp panel |