TWI804377B - Transferring module - Google Patents

Transferring module Download PDF

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TWI804377B
TWI804377B TW111125232A TW111125232A TWI804377B TW I804377 B TWI804377 B TW I804377B TW 111125232 A TW111125232 A TW 111125232A TW 111125232 A TW111125232 A TW 111125232A TW I804377 B TWI804377 B TW I804377B
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adhesive layer
sub
substrate
optical layers
transfer module
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TW202341540A (en
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陳昱廷
賴世倫
曾文賢
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友達光電股份有限公司
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Abstract

A transferring module includes a substrate, an adhesive layer and a plurality of electronic elements. The substrate has a plurality of pixel areas. The adhesive layer is adhered to the substrate. The adhesive layer includes a plurality of first optical layers. The first optical layers are embedded inside the adhesive layer. A vertical projection of each of the first optical layers towards the substrate is located between adjacent two of the pixel areas. The electronic elements are adhered to a side of the adhesive layer away from the substrate. A vertical projection of each of the electronic elements towards the substrate is located within the corresponding one of the pixel areas.

Description

轉移模組transfer mod

本發明是關於一種轉移模組，且特別是關於一種用以轉移微發光二極體（microscopic light-emitting diode；micro-LED）的轉移模組。The present invention relates to a transfer module, and in particular to a transfer module for transferring a microscopic light-emitting diode (micro-LED).

隨著現今科技的進步，各種類型的顯示器已經大幅度地融入了消費者的日常生活中。為要滿足消費者的需求以把握這個龐大的商機，廠商紛紛致力在更佳的成本控制下，提高顯示器的出廠品質。With the advancement of today's technology, various types of displays have been largely integrated into the daily life of consumers. In order to meet the needs of consumers and grasp this huge business opportunity, manufacturers are striving to improve the factory quality of displays under better cost control.

因此，在微發光二極體顯示器的生產過程中，如何在低成本下有效提高生產的良率，無疑是業界是一個非常重視的發展方向。Therefore, in the production process of micro-light-emitting diode displays, how to effectively improve the production yield at low cost is undoubtedly a development direction that the industry attaches great importance to.

本發明之目的之一在於提供一種轉移模組，其能防止電子元件黏著層受熱膨脹而出現非預期的位移。One of the objectives of the present invention is to provide a transfer module, which can prevent unexpected displacement of the adhesive layer of the electronic component due to thermal expansion.

根據本發明的一實施方式，一種轉移模組包含基板、黏著層以及複數個電子元件。基板具有複數個畫素區。黏著層黏附於基板，黏著層包含複數個第一光學層，第一光學層埋置於黏著層內，第一光學層朝向基板的垂直投影位於兩相鄰之畫素區之間。複數個電子元件黏附於黏著層遠離基板之一側，電子元件朝向基板的垂直投影位於對應之畫素區內。According to an embodiment of the present invention, a transfer module includes a substrate, an adhesive layer, and a plurality of electronic components. The substrate has a plurality of pixel regions. The adhesive layer is adhered to the substrate, and the adhesive layer includes a plurality of first optical layers, the first optical layers are embedded in the adhesive layer, and the vertical projection of the first optical layer toward the substrate is located between two adjacent pixel regions. A plurality of electronic components are adhered to one side of the adhesive layer away from the substrate, and the vertical projection of the electronic components toward the substrate is located in the corresponding pixel area.

在本發明一或多個實施方式中，上述之黏著層包含第一子黏著層以及第二子黏著層。第一子黏著層黏附於基板。第一光學層夾置於第一子黏著層與第二子黏著層之間，電子元件黏附於第二子黏著層，第二子黏著層的黏性弱於第一子黏著層的黏性。In one or more embodiments of the present invention, the above-mentioned adhesive layer includes a first sub-adhesive layer and a second sub-adhesive layer. The first sub-adhesive layer adheres to the substrate. The first optical layer is sandwiched between the first sub-adhesive layer and the second sub-adhesive layer, the electronic components are adhered to the second sub-adhesive layer, and the viscosity of the second sub-adhesive layer is weaker than that of the first sub-adhesive layer.

在本發明一或多個實施方式中，上述之第一光學層沿第一方向排列並分別沿第二方向延伸，第一方向與第二方向彼此相交。In one or more embodiments of the present invention, the above-mentioned first optical layers are arranged along a first direction and respectively extend along a second direction, and the first direction and the second direction intersect each other.

在本發明一或多個實施方式中，上述之黏著層更包含複數個第二光學層。第二光學層夾置於第一子黏著層與第二子黏著層之間，且沿第二方向排列並分別沿第一方向延伸，第二光學層與第一光學層彼此連接，第二光學層朝向基板的垂直投影位於至少兩相鄰之畫素區之間。In one or more embodiments of the present invention, the above-mentioned adhesive layer further includes a plurality of second optical layers. The second optical layer is sandwiched between the first sub-adhesive layer and the second sub-adhesive layer, and is arranged along the second direction and extends along the first direction respectively, the second optical layer and the first optical layer are connected to each other, and the second optical layer The vertical projection of the layer towards the substrate is located between at least two adjacent pixel regions.

在本發明一或多個實施方式中，上述之第二光學層為金屬材料。In one or more embodiments of the present invention, the above-mentioned second optical layer is a metal material.

在本發明一或多個實施方式中，上述之第二光學層的透光率小於20％。In one or more embodiments of the present invention, the light transmittance of the above-mentioned second optical layer is less than 20%.

在本發明一或多個實施方式中，上述之第二光學層具有可變化的透光率。In one or more embodiments of the present invention, the above-mentioned second optical layer has variable light transmittance.

在本發明一或多個實施方式中，上述之第二光學層的材質相同於第一光學層的材質。In one or more embodiments of the present invention, the material of the above-mentioned second optical layer is the same as that of the first optical layer.

在本發明一或多個實施方式中，上述之第一光學層為金屬材料。In one or more embodiments of the present invention, the above-mentioned first optical layer is a metal material.

在本發明一或多個實施方式中，上述之第一光學層的透光率小於20％。In one or more embodiments of the present invention, the light transmittance of the above-mentioned first optical layer is less than 20%.

在本發明一或多個實施方式中，上述之第一光學層具有可變化的透光率。In one or more embodiments of the present invention, the above-mentioned first optical layer has variable light transmittance.

在本發明一或多個實施方式中，上述之電子元件包含複數個微發光二極體。In one or more embodiments of the present invention, the above-mentioned electronic components include a plurality of micro light emitting diodes.

本發明上述實施方式至少具有以下優點：The foregoing embodiments of the present invention have at least the following advantages:

（1）由於受到第一光學層及第二光學層遮擋的第二子黏著層没有直接被雷射光束照射，因此，被遮擋的第二子黏著層不會因吸收過高的能量而受熱膨脹，而附近黏附於第二子黏著層的電子元件（即微發光二極體）也不會因被遮擋的第二子黏著層受熱膨脹而出現非預期的位移，故第一光學層及第二光學層能有助於提升把微發光二極體結合於目標基板上的成效。(1) Since the second sub-adhesive layer blocked by the first optical layer and the second optical layer is not directly irradiated by the laser beam, the blocked second sub-adhesive layer will not thermally expand due to excessive energy absorption , and the nearby electronic components (that is, micro light-emitting diodes) attached to the second sub-adhesive layer will not experience unexpected displacement due to thermal expansion of the blocked second sub-adhesive layer, so the first optical layer and the second The optical layer can help improve the efficiency of bonding micro-LEDs to target substrates.

（2）由於第一光學層及第二光學層皆夾置於第一子黏著層與第二子黏著層之間，亦即第一光學層及第二光學層並不位於黏著層的表面，因此，第一光學層及第二光學層不會降低黏著層對基板的黏附力，也不會阻礙到電子元件於黏著層上的排列。(2) Since both the first optical layer and the second optical layer are sandwiched between the first sub-adhesive layer and the second sub-adhesive layer, that is, the first optical layer and the second optical layer are not located on the surface of the adhesive layer, Therefore, the first optical layer and the second optical layer will not reduce the adhesive force of the adhesive layer to the substrate, nor will they hinder the arrangement of electronic components on the adhesive layer.

（3）由於第一光學層及第二光學層相較基板更接近電子元件，因此，當以自動化光學系統對電子元件（即微發光二極體）進行辨識時，自動化光學系統能獲得更清楚的影像。(3) Since the first optical layer and the second optical layer are closer to the electronic components than the substrate, when the electronic components (ie, micro light-emitting diodes) are identified by the automated optical system, the automated optical system can obtain a clearer of the image.

以下將以圖式揭露本發明之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之，而在所有圖式中，相同的標號將用於表示相同或相似的元件。且若實施上為可能，不同實施例的特徵係可以交互應用。Several embodiments of the present invention will be disclosed in the following figures. For the sake of clarity, many practical details will be described together in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some commonly used structures and elements will be shown in a simple schematic way in the drawings, and in all the drawings, the same reference numerals will be used to represent the same or similar elements . And if possible in practice, the features of different embodiments can be used interchangeably.

除非另有定義，本文所使用的所有詞彙（包括技術和科學術語）具有其通常的意涵，其意涵係能夠被熟悉此領域者所理解。更進一步的說，上述之詞彙在普遍常用之字典中之定義，在本說明書的內容中應被解讀為與本發明相關領域一致的意涵。除非有特別明確定義，這些詞彙將不被解釋為理想化的或過於正式的意涵。Unless otherwise defined, all terms (including technical and scientific terms) used herein have their ordinary meanings that can be understood by those skilled in the art. Furthermore, the definitions of the above-mentioned words in the commonly used dictionaries should be interpreted in the content of this specification as meanings consistent with the relevant fields of the present invention. Unless specifically defined, these terms are not to be interpreted in an idealized or overly formal sense.

請參照第1圖。第1圖為繪示依照本發明一實施方式之轉移模組100的側視圖。在本實施方式中，如第1圖所示，轉移模組100包含基板110、黏著層120以及複數個電子元件200。基板110具有複數個畫素區PA。實際上，基板110包含第一子基板111以及疊置於第一子基板111上的第二子基板112，第一子基板111例如可為晶粒暫存基板（Chip on Carrier ；COC），而第二子基板112則例如可為石英基板。黏著層120黏附於基板110的第一子基板111，且黏著層120包含複數個第一光學層121，第一光學層121埋置於黏著層120內，亦即第一光學層121並不位於黏著層120的表面，因此，第一光學層121不會降低黏著層120對基板110的黏附力，也不會阻礙到電子元件200於黏著層120上的排列。再者，複數個電子元件200黏附於黏著層120遠離基板110之一側。實際上，每個電子元件200包含複數個微發光二極體（microscopic light-emitting diode；micro-LED）210。Please refer to Figure 1. FIG. 1 is a side view illustrating a transfer module 100 according to an embodiment of the present invention. In this embodiment, as shown in FIG. 1 , the transfer module 100 includes a substrate 110 , an adhesive layer 120 and a plurality of electronic components 200 . The substrate 110 has a plurality of pixel areas PA. In fact, the substrate 110 includes a first sub-substrate 111 and a second sub-substrate 112 stacked on the first sub-substrate 111, the first sub-substrate 111 may be, for example, a chip temporary storage substrate (Chip on Carrier; COC), and The second sub-substrate 112 can be, for example, a quartz substrate. The adhesive layer 120 is adhered to the first sub-substrate 111 of the substrate 110, and the adhesive layer 120 includes a plurality of first optical layers 121, and the first optical layers 121 are embedded in the adhesive layer 120, that is, the first optical layers 121 are not located Therefore, the first optical layer 121 will not reduce the adhesion of the adhesive layer 120 to the substrate 110 , nor will it hinder the arrangement of the electronic components 200 on the adhesive layer 120 . Furthermore, a plurality of electronic components 200 are adhered to a side of the adhesive layer 120 away from the substrate 110 . Actually, each electronic component 200 includes a plurality of microscopic light-emitting diodes (microscopic light-emitting diodes; micro-LEDs) 210 .

請參照第2圖。第2圖為繪示沿第1圖之線段A-A的剖面圖。值得注意的是，在本實施方式中，如第2圖所示，第一光學層121朝向基板110的垂直投影位於兩相鄰之畫素區PA之間。更具體而言，第一光學層121朝向基板110的垂直投影，位於兩相鄰之畫素區PA中最接近的微發光二極體210之間。再者，電子元件200朝向基板110的垂直投影位於對應之畫素區PA內，亦即微發光二極體210朝向基板110的垂直投影位於對應之畫素區PA內。Please refer to Figure 2. Figure 2 is a cross-sectional view along the line segment A-A in Figure 1. It should be noted that in this embodiment, as shown in FIG. 2 , the vertical projection of the first optical layer 121 toward the substrate 110 is located between two adjacent pixel areas PA. More specifically, the vertical projection of the first optical layer 121 toward the substrate 110 is located between the closest micro light emitting diodes 210 in two adjacent pixel areas PA. Furthermore, the vertical projection of the electronic component 200 toward the substrate 110 is located in the corresponding pixel area PA, that is, the vertical projection of the micro light emitting diode 210 toward the substrate 110 is located in the corresponding pixel area PA.

進一步而言，第一光學層121沿第一方向D1排列並分別沿第二方向D2延伸，第一方向D1與第二方向D2彼此相交。在實務的應用中，第一方向D1與第二方向D2可彼此垂直，也可根據實際狀況，第一方向D1與第二方向D2彼此傾斜若干角度。Further, the first optical layer 121 is arranged along the first direction D1 and extends along the second direction D2 respectively, and the first direction D1 and the second direction D2 intersect each other. In practical applications, the first direction D1 and the second direction D2 may be perpendicular to each other, or may be inclined at a certain angle to each other according to actual conditions.

請參照第3圖。第3圖為繪示沿第2圖之線段B-B的剖面圖。在本實施方式中，如第1、3圖所，黏著層120包含第一子黏著層122以及第二子黏著層123。第一子黏著層122黏附於基板110的第一子基板111，而第一光學層121夾置於第一子黏著層122與第二子黏著層123之間，且電子元件200的微發光二極體210黏附於第二子黏著層123。具體而言，第二子黏著層123的黏性弱於第一子黏著層122的黏性，因此，當黏附於第二子黏著層123的微發光二極體210抵接並固定於目標基板300（目標基板300請見第5圖）後，微發光二極體210可易於從第二子黏著層123脫離。Please refer to Figure 3. Fig. 3 is a cross-sectional view along the line segment B-B in Fig. 2 . In this embodiment, as shown in FIGS. 1 and 3 , the adhesive layer 120 includes a first sub-adhesive layer 122 and a second sub-adhesive layer 123 . The first sub-adhesive layer 122 is adhered to the first sub-substrate 111 of the substrate 110, and the first optical layer 121 is sandwiched between the first sub-adhesive layer 122 and the second sub-adhesive layer 123, and the micro-light emission of the electronic component 200 is two The polar body 210 is adhered to the second sub-adhesive layer 123 . Specifically, the viscosity of the second sub-adhesive layer 123 is weaker than that of the first sub-adhesive layer 122, therefore, when the micro light-emitting diode 210 adhered to the second sub-adhesive layer 123 abuts and is fixed on the target substrate 300 (see FIG. 5 for the target substrate 300 ), the micro light emitting diode 210 can be easily detached from the second sub-adhesive layer 123 .

請參照第4圖。第4圖為繪示沿第2圖之線段C-C的剖面圖。在本實施方式中，如第1～2、4圖所，黏著層120更包含複數個第二光學層124。第二光學層124夾置於第一子黏著層122與第二子黏著層123之間，亦即第二光學層124並不位於黏著層120的表面，因此，相似地，第二光學層124不會降低黏著層120對基板110的黏附力，也不會阻礙到電子元件200於黏著層120上的排列。再者，第二光學層124沿第二方向D2排列並分別沿第一方向D1延伸。而且，如第2圖所示，第二光學層124與第一光學層121彼此連接，而第二光學層124朝向基板110的垂直投影位於至少兩相鄰之畫素區PA之間。更具體而言，第二光學層124朝向基板110的垂直投影，位於兩相鄰之畫素區PA中最接近的微發光二極體210之間。Please refer to Figure 4. Fig. 4 is a cross-sectional view along the line segment C-C in Fig. 2 . In this embodiment, as shown in FIGS. 1 to 2 and 4 , the adhesive layer 120 further includes a plurality of second optical layers 124 . The second optical layer 124 is sandwiched between the first sub-adhesive layer 122 and the second sub-adhesive layer 123, that is, the second optical layer 124 is not located on the surface of the adhesive layer 120, therefore, similarly, the second optical layer 124 The adhesive force of the adhesive layer 120 to the substrate 110 will not be reduced, and the arrangement of the electronic components 200 on the adhesive layer 120 will not be hindered. Furthermore, the second optical layers 124 are arranged along the second direction D2 and extend along the first direction D1 respectively. Moreover, as shown in FIG. 2 , the second optical layer 124 and the first optical layer 121 are connected to each other, and the vertical projection of the second optical layer 124 toward the substrate 110 is located between at least two adjacent pixel areas PA. More specifically, the vertical projection of the second optical layer 124 toward the substrate 110 is located between the closest micro light emitting diodes 210 in two adjacent pixel areas PA.

在實務的應用中，第二光學層124的材質相同於第一光學層121的材質，且第一光學層121以及第二光學層124能發揮遮光的效果。舉例而言，第一光學層121以及第二光學層124可皆為金屬材料。當雷射光束（請見第5～6圖所繪示之雷射光束LB）照向第一光學層121以及第二光學層124時，雷射光束會被第一光學層121以及第二光學層124遮擋。In practical applications, the material of the second optical layer 124 is the same as that of the first optical layer 121 , and the first optical layer 121 and the second optical layer 124 can play a light-shielding effect. For example, both the first optical layer 121 and the second optical layer 124 can be made of metal materials. When the laser beam (please refer to the laser beam LB shown in Figures 5-6) is irradiated to the first optical layer 121 and the second optical layer 124, the laser beam will be absorbed by the first optical layer 121 and the second optical layer. Layer 124 shades.

在其他實施方式中，第一光學層121以及第二光學層124的透光率可小於20％。當雷射光束照向第一光學層121以及第二光學層124時，超過80％的強度會被第一光學層121以及第二光學層124遮擋。In other embodiments, the transmittance of the first optical layer 121 and the second optical layer 124 may be less than 20%. When the laser beam is irradiated to the first optical layer 121 and the second optical layer 124 , more than 80% of the intensity will be blocked by the first optical layer 121 and the second optical layer 124 .

在其他實施方式中，第一光學層121以及第二光學層124皆具有可變化的透光率。舉例而言，在受到雷射光束照射前，第一光學層121以及第二光學層124的透光率可大於20％，而在受到雷射光束照射的時候，第一光學層121以及第二光學層124的透光率則產生變化而降低為小於20％，此時，雷射光束超過80％的強度會被透光率變化後的第一光學層121以及第二光學層124遮擋。In other embodiments, both the first optical layer 121 and the second optical layer 124 have variable transmittance. For example, before being irradiated by laser beams, the light transmittance of the first optical layer 121 and the second optical layer 124 can be greater than 20%, and when irradiated by laser beams, the first optical layer 121 and the second optical layer 121 can be more than 20%. The light transmittance of the optical layer 124 changes and decreases to less than 20%. At this time, the intensity of the laser beam exceeding 80% will be blocked by the first optical layer 121 and the second optical layer 124 after the light transmittance changes.

請參照第5～6圖。第5圖為繪示第1圖之轉移模組100的作業示意剖面圖。第6圖為繪示沿第5圖之線段D-D的剖面圖。在本實施方式中，如第5圖所示，電子元件200已抵接目標基板300，而轉移模組100上方設置有雷射光源400，雷射光源400配置以朝向微發光二極體210射出雷射光束LB，以使微發光二極體210a結合於目標基板300上。如第6圖所示，雷射光束LB之投射範圍呈線狀，且沿第一方向D1延伸。也就是說，雷射光束LB同時對沿第一方向D1排列的微發光二極體210a進行照射，以使這些微發光二極體210a結合於目標基板300上。在實務的應用中，雷射光束LB之投射範圍超過至少一個畫素區PA的寬度。舉例而言，如第6圖所示，雷射光束LB之投射範圍超過兩個畫素區PA的寬度。再者，在作業過程中，雷射光源400相對轉移模組100沿第二方向D2移動。也就是說，雷射光束LB呈線狀之投射範圍會逐漸相對轉移模組100沿第二方向D2移動，以沿第二方向D2順序對電子元件200進行照射。Please refer to Figures 5-6. FIG. 5 is a schematic sectional view illustrating the operation of the transfer module 100 in FIG. 1 . Fig. 6 is a cross-sectional view along line D-D in Fig. 5 . In this embodiment, as shown in FIG. 5, the electronic component 200 has been abutted against the target substrate 300, and a laser light source 400 is arranged above the transfer module 100, and the laser light source 400 is configured to emit light toward the micro light emitting diode 210. The laser beam LB is used to combine the micro light emitting diodes 210 a on the target substrate 300 . As shown in FIG. 6, the projection range of the laser beam LB is linear and extends along the first direction D1. That is to say, the laser beam LB simultaneously irradiates the micro light emitting diodes 210 a arranged along the first direction D1 , so that these micro light emitting diodes 210 a are combined on the target substrate 300 . In a practical application, the projection range of the laser beam LB exceeds at least one width of the pixel area PA. For example, as shown in FIG. 6 , the projection range of the laser beam LB exceeds the width of two pixel areas PA. Furthermore, during the working process, the laser light source 400 moves relative to the transfer module 100 along the second direction D2. That is to say, the linear projection range of the laser beam LB will gradually move relative to the transfer module 100 along the second direction D2, so as to sequentially irradiate the electronic components 200 along the second direction D2.

綜上所述，由於第一光學層121能發揮遮光的效果，因此，位於第一光學層121遠離基板110一側的第二子黏著層123可受到第一光學層121的遮擋，使得照射到被遮擋的第二子黏著層123的雷射光束LB之強度大幅降低。如上所述，第一光學層121的透光率可小於20％。也就是說，經過第一光學層121的遮擋，照射到第二子黏著層123的雷射光束LB之強度可降低至原來強度的20％以下。如此一來，由於受到第一光學層121遮擋的第二子黏著層123没有直接被雷射光束LB照射，因此，被遮擋的第二子黏著層123不會因吸收過高的能量而受熱膨脹，而附近黏附於第二子黏著層123的電子元件200也不會因被遮擋的第二子黏著層123受熱膨脹而出現非預期的位移，故第一光學層121能有助於提升把微發光二極體210結合於目標基板300上的成效。To sum up, since the first optical layer 121 can play a light-shielding effect, the second sub-adhesive layer 123 located on the side of the first optical layer 121 away from the substrate 110 can be blocked by the first optical layer 121, so that the radiation The intensity of the laser beam LB of the blocked second sub-adhesive layer 123 is greatly reduced. As described above, the light transmittance of the first optical layer 121 may be less than 20%. That is to say, after being shielded by the first optical layer 121 , the intensity of the laser beam LB irradiated on the second sub-adhesive layer 123 can be reduced to less than 20% of the original intensity. In this way, since the second sub-adhesive layer 123 blocked by the first optical layer 121 is not directly irradiated by the laser beam LB, the blocked second sub-adhesive layer 123 will not thermally expand due to excessive energy absorption. , and the nearby electronic components 200 adhered to the second sub-adhesive layer 123 will not experience unexpected displacement due to thermal expansion of the blocked second sub-adhesive layer 123, so the first optical layer 121 can help improve the micro The effect of combining the light emitting diode 210 on the target substrate 300 .

相似地，由於第二光學層124能發揮遮光的效果，因此，位於第二光學層124遠離基板110一側的第二子黏著層123可受到第二光學層124的遮擋，使得照射到被遮擋的第二子黏著層123的雷射光束LB之強度大幅降低。如上所述，第二光學層124的透光率可小於20％。也就是說，經過第二光學層124的遮擋，照射到第二子黏著層123的雷射光束LB之強度可降低至原來強度的20％以下。如此一來，由於受到第二光學層124遮擋的第二子黏著層123没有直接被雷射光束LB照射，因此，被遮擋的第二子黏著層123不會因吸收過高的能量而受熱膨脹。具體而言，如第6圖所示，當微發光二極體210a被雷射光束LB照射時，未被雷射光束LB照射的微發光二極體210b不會因為位於微發光二極體210a及微發光二極體210b之間的第二子黏著層123受熱膨脹而出現非預期的位移。故此，第二光學層124能有助於提升把電子元件200結合於目標基板300上的成效。Similarly, since the second optical layer 124 can play a light-shielding effect, the second sub-adhesive layer 123 located on the side of the second optical layer 124 away from the substrate 110 can be blocked by the second optical layer 124, so that the light to the blocked The intensity of the laser beam LB of the second sub-adhesive layer 123 is greatly reduced. As mentioned above, the light transmittance of the second optical layer 124 may be less than 20%. That is to say, after being shielded by the second optical layer 124 , the intensity of the laser beam LB irradiated on the second sub-adhesive layer 123 can be reduced to less than 20% of the original intensity. In this way, since the second sub-adhesive layer 123 blocked by the second optical layer 124 is not directly irradiated by the laser beam LB, the blocked second sub-adhesive layer 123 will not be thermally expanded due to excessive energy absorption. . Specifically, as shown in FIG. 6, when the micro light emitting diode 210a is irradiated by the laser beam LB, the micro light emitting diode 210b that is not irradiated by the laser beam LB will not be located on the micro light emitting diode 210a The second sub-adhesive layer 123 between the micro light-emitting diodes 210b expands due to thermal expansion, resulting in unexpected displacement. Therefore, the second optical layer 124 can help to improve the effect of combining the electronic device 200 on the target substrate 300 .

再者，值得注意的是，由於第一光學層121及第二光學層124相較基板110更接近電子元件200，因此，當以自動化光學系統對電子元件200進行辨識時，自動化光學系統能獲得更清楚的影像。Furthermore, it is worth noting that since the first optical layer 121 and the second optical layer 124 are closer to the electronic component 200 than the substrate 110, when the electronic component 200 is identified by the automated optical system, the automated optical system can obtain Clearer images.

綜上所述，本發明上述實施方式所揭露的技術方案至少具有以下優點：In summary, the technical solutions disclosed in the above embodiments of the present invention have at least the following advantages:

（1）由於受到第一光學層及第二光學層遮擋的第二子黏著層没有直接被雷射光束照射，因此，被遮擋的第二子黏著層不會因吸收過高的能量而受熱膨脹，而附近黏附於第二子黏著層的電子元件（即微發光二極體）也不會因被遮擋的第二子黏著層受熱膨脹而出現非預期的位移，故第一光學層及第二光學層能有助於提升把微發光二極體結合於目標基板上的成效。(1) Since the second sub-adhesive layer blocked by the first optical layer and the second optical layer is not directly irradiated by the laser beam, the blocked second sub-adhesive layer will not thermally expand due to excessive energy absorption , and the nearby electronic components (that is, micro light-emitting diodes) attached to the second sub-adhesive layer will not experience unexpected displacement due to thermal expansion of the blocked second sub-adhesive layer, so the first optical layer and the second The optical layer can help improve the efficiency of bonding micro-LEDs to target substrates.

（2）由於第一光學層及第二光學層皆夾置於第一子黏著層與第二子黏著層之間，亦即第一光學層及第二光學層並不位於黏著層的表面，因此，第一光學層及第二光學層不會降低黏著層對基板的黏附力，也不會阻礙到電子元件於黏著層上的排列。(2) Since both the first optical layer and the second optical layer are sandwiched between the first sub-adhesive layer and the second sub-adhesive layer, that is, the first optical layer and the second optical layer are not located on the surface of the adhesive layer, Therefore, the first optical layer and the second optical layer will not reduce the adhesive force of the adhesive layer to the substrate, nor will they hinder the arrangement of electronic components on the adhesive layer.

（3）由於第一光學層及第二光學層相較基板更接近電子元件，因此，當以自動化光學系統對電子元件（即微發光二極體）進行辨識時，自動化光學系統能獲得更清楚的影像。(3) Since the first optical layer and the second optical layer are closer to the electronic components than the substrate, when the electronic components (ie, micro light-emitting diodes) are identified by the automated optical system, the automated optical system can obtain a clearer of the image.

雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed above in terms of implementation, it is not intended to limit the present invention. Anyone skilled in this art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be defined by the appended patent application scope.

100:轉移模組 110:基板 111:第一子基板 112:第二子基板 120:黏著層 121:第一光學層 122:第一子黏著層 123:第二子黏著層 124:第二光學層 200:電子元件 210,210a,210b:微發光二極體 300:目標基板 400:雷射光源 A-A,B-B,C-C,D-D:線段 D1:第一方向 D2:第二方向 LB:雷射光束 PA:畫素區 100: Transfer Module 110: Substrate 111: The first sub-substrate 112: The second sub-substrate 120: Adhesive layer 121: The first optical layer 122: The first sub-adhesive layer 123: The second sub-adhesive layer 124: second optical layer 200: electronic components 210, 210a, 210b: micro light emitting diodes 300: target substrate 400: laser light source A-A,B-B,C-C,D-D: line segment D1: the first direction D2: Second direction LB: laser beam PA: pixel area

第1圖為繪示依照本發明一實施方式之轉移模組的側視圖。 第2圖為繪示沿第1圖之線段A-A的剖面圖。 第3圖為繪示沿第2圖之線段B-B的剖面圖。 第4圖為繪示沿第2圖之線段C-C的剖面圖。 第5圖為繪示第1圖之轉移模組的作業示意剖面圖。 第6圖為繪示沿第5圖之線段D-D的剖面圖。 FIG. 1 is a side view illustrating a transfer module according to an embodiment of the present invention. Figure 2 is a cross-sectional view along the line segment A-A in Figure 1. Fig. 3 is a cross-sectional view along the line segment B-B in Fig. 2 . Fig. 4 is a cross-sectional view along the line segment C-C in Fig. 2 . Fig. 5 is a schematic sectional view showing the operation of the transfer module in Fig. 1. Fig. 6 is a cross-sectional view along line D-D in Fig. 5 .

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

100:轉移模組 100: Transfer Module

110:基板 110: Substrate

111:第一子基板 111: The first sub-substrate

112:第二子基板 112: The second sub-substrate

120:黏著層 120: Adhesive layer

122:第一子黏著層 122: The first sub-adhesive layer

123:第二子黏著層 123: The second sub-adhesive layer

124:第二光學層 124: second optical layer

200:電子元件 200: electronic components

210a,210b:微發光二極體 210a, 210b: micro light emitting diodes

300:目標基板 300: target substrate

400:雷射光源 400: laser light source

D-D:線段 D-D: line segment

D1:第一方向 D1: the first direction

D2:第二方向 D2: Second direction

LB:雷射光束 LB: laser beam

PA:畫素區 PA: pixel area

Claims (12)

一種轉移模組，包含：一基板，具有複數個畫素區；一黏著層，黏附於該基板，該黏著層包含複數個第一光學層，該些第一光學層埋置於該黏著層內，每一該些第一光學層朝向該基板的垂直投影位於兩相鄰之該些畫素區之間，且該些第一光學層用以遮光；以及複數個電子元件，黏附於該黏著層遠離該基板之一側，每一該些電子元件朝向該基板的垂直投影位於對應之該畫素區內。 A transfer module, comprising: a substrate having a plurality of pixel areas; an adhesive layer adhered to the substrate, the adhesive layer including a plurality of first optical layers embedded in the adhesive layer , the vertical projection of each of the first optical layers toward the substrate is located between two adjacent pixel areas, and the first optical layers are used for light shielding; and a plurality of electronic components are adhered to the adhesive layer A side away from the substrate, the vertical projection of each of the electronic components towards the substrate is located in the corresponding pixel area. 如請求項1所述之轉移模組，其中該黏著層包含：一第一子黏著層，黏附於該基板；以及一第二子黏著層，該些第一光學層夾置於該第一子黏著層與該第二子黏著層之間，該些電子元件黏附於該第二子黏著層，該第二子黏著層的黏性弱於該第一子黏著層的黏性。 The transfer module as described in claim 1, wherein the adhesive layer includes: a first sub-adhesive layer adhered to the substrate; and a second sub-adhesive layer, the first optical layers are sandwiched between the first sub-adhesive layer Between the adhesive layer and the second sub-adhesive layer, the electronic components are adhered to the second sub-adhesive layer, and the viscosity of the second sub-adhesive layer is weaker than that of the first sub-adhesive layer. 如請求項2所述之轉移模組，其中該些第一光學層沿一第一方向排列並分別沿一第二方向延伸，該第一方向與該第二方向彼此相交。 The transfer module according to claim 2, wherein the first optical layers are arranged along a first direction and respectively extend along a second direction, and the first direction and the second direction intersect each other. 如請求項3所述之轉移模組，其中該黏著層 更包含：複數個第二光學層，夾置於該第一子黏著層與該第二子黏著層之間，且沿該第二方向排列並分別沿該第一方向延伸，該些第二光學層與該些第一光學層彼此連接，每一該些第二光學層朝向該基板的垂直投影位於至少兩相鄰之該些畫素區之間。 The transfer module as described in claim 3, wherein the adhesive layer It further includes: a plurality of second optical layers sandwiched between the first sub-adhesive layer and the second sub-adhesive layer, arranged along the second direction and respectively extending along the first direction, the second optical layers The layer and the first optical layers are connected to each other, and the vertical projection of each of the second optical layers toward the substrate is located between at least two adjacent pixel regions. 如請求項4所述之轉移模組，其中該些第二光學層為金屬材料。 The transfer module as claimed in claim 4, wherein the second optical layers are metal materials. 如請求項4所述之轉移模組，其中該些第二光學層的透光率小於20%。 The transfer module according to claim 4, wherein the light transmittance of the second optical layers is less than 20%. 如請求項4所述之轉移模組，其中該些第二光學層具有可變化的透光率。 The transfer module as claimed in claim 4, wherein the second optical layers have variable light transmittance. 如請求項4所述之轉移模組，其中該些第二光學層的材質相同於該些第一光學層的材質。 The transfer module as claimed in claim 4, wherein the material of the second optical layers is the same as that of the first optical layers. 如請求項1所述之轉移模組，其中該些第一光學層為金屬材料。 The transfer module as claimed in claim 1, wherein the first optical layers are metal materials. 如請求項1所述之轉移模組，其中該些第一光學層的透光率小於20%。 The transfer module as claimed in claim 1, wherein the light transmittance of the first optical layers is less than 20%. 如請求項1所述之轉移模組，其中該些第一光學層具有可變化的透光率。 The transfer module as claimed in claim 1, wherein the first optical layers have variable light transmittance. 如請求項1所述之轉移模組，其中每一該些電子元件包含複數個微發光二極體。 The transfer module as claimed in claim 1, wherein each of the electronic components includes a plurality of micro light emitting diodes.
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