TW201613130A - LED with reflective mirror protective layer and manufacturing method of the reflective mirror protective layer - Google Patents

LED with reflective mirror protective layer and manufacturing method of the reflective mirror protective layer

Info

Publication number
TW201613130A
TW201613130A TW103133531A TW103133531A TW201613130A TW 201613130 A TW201613130 A TW 201613130A TW 103133531 A TW103133531 A TW 103133531A TW 103133531 A TW103133531 A TW 103133531A TW 201613130 A TW201613130 A TW 201613130A
Authority
TW
Taiwan
Prior art keywords
layer
metal
metal reflective
reflective layer
protective layer
Prior art date
Application number
TW103133531A
Other languages
Chinese (zh)
Other versions
TWI562400B (en
Inventor
Wei-Yu Yan
li-ping Zhou
Fu-Bang Chen
zhi-song Zhang
Original Assignee
High Power Optoelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by High Power Optoelectronics Inc filed Critical High Power Optoelectronics Inc
Priority to TW103133531A priority Critical patent/TW201613130A/en
Publication of TW201613130A publication Critical patent/TW201613130A/en
Application granted granted Critical
Publication of TWI562400B publication Critical patent/TWI562400B/zh

Links

Abstract

The present invention provides a structure formed by sequentially stacking an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a metal reflective layer, a protective adhesion layer and a metal buffer layer. The protective adhesion layer is selected from a group consisting of metal oxide and metal nitride. The protective adhesion layer fully covers the side of the metal reflective layer away from the P-type semiconductor layer and has a plurality of conductive holes. The metal buffer layer passes through the plurality of conductive holes and is electrically connected to the metal reflective layer. The method of the present invention is characterized in that, after forming the metal reflective layer on the P-type semiconductor layer, the protective adhesion layer is then directly formed to completely cover the metal reflective layer. Thus, the present invention makes use of the protective adhesion layer to fully protect the metal reflective layer and prevent the metal reflective layer from oxidation and consequent reflectivity deterioration, thereby ensuring the light emission efficiency of an LED and satisfying the demands in use.
TW103133531A 2014-09-26 2014-09-26 LED with reflective mirror protective layer and manufacturing method of the reflective mirror protective layer TW201613130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103133531A TW201613130A (en) 2014-09-26 2014-09-26 LED with reflective mirror protective layer and manufacturing method of the reflective mirror protective layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103133531A TW201613130A (en) 2014-09-26 2014-09-26 LED with reflective mirror protective layer and manufacturing method of the reflective mirror protective layer

Publications (2)

Publication Number Publication Date
TW201613130A true TW201613130A (en) 2016-04-01
TWI562400B TWI562400B (en) 2016-12-11

Family

ID=56360954

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103133531A TW201613130A (en) 2014-09-26 2014-09-26 LED with reflective mirror protective layer and manufacturing method of the reflective mirror protective layer

Country Status (1)

Country Link
TW (1) TW201613130A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI817597B (en) * 2022-04-01 2023-10-01 友達光電股份有限公司 Light-emitting panel

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201001745A (en) * 2008-06-25 2010-01-01 Tekcore Co Ltd Electro-optical device and manufacturing method thereof
US8916883B2 (en) * 2010-12-20 2014-12-23 Lg Innotek Co., Ltd. Light emitting device and method for fabricating the same
TW201349576A (en) * 2012-05-22 2013-12-01 High Power Optoelectronics Inc LED with reflector protection layer
US8766303B2 (en) * 2012-08-31 2014-07-01 High Power Opto. Inc. Light-emitting diode with a mirror protection layer
WO2014061906A1 (en) * 2012-10-15 2014-04-24 서울바이오시스 주식회사 Method for separating growth substrate, method for manufacturing light-emitting diode, and light-emitting diode manufactured using methods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI817597B (en) * 2022-04-01 2023-10-01 友達光電股份有限公司 Light-emitting panel

Also Published As

Publication number Publication date
TWI562400B (en) 2016-12-11

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