TW202329434A - Photosensitive device substrate and manufacturing method thereof - Google Patents
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本發明是有關於一種感光元件基板及其製造方法。The invention relates to a photosensitive element substrate and a manufacturing method thereof.
隨著科技的進展,觸控裝置在市面上的出現率逐漸增加,且各種有關的技術也層出不窮。在一些電子裝置中,如:手機、平板電腦、智慧型手錶等,時常會將觸控裝置與顯示面板結合在一起,以提高電子裝置於使用上的便利性。With the development of science and technology, the appearance rate of touch devices in the market is gradually increasing, and various related technologies are emerging in an endless stream. In some electronic devices, such as mobile phones, tablet computers, smart watches, etc., touch devices are often combined with display panels to improve the convenience of using the electronic devices.
目前,光電二極體常被用於觸控裝置中。光電二極體在吸收光線後會產生電流,由於觸控裝置上的手指或觸控筆會遮蔽光線並減小光電二極體所產生的光電流,因此可以藉由偵測電流判斷手指或觸控筆的位置。常見的光電二極體例如包括PN型光電二極體以及PIN型光電二極體。一般而言,PN型光電二極體包括P型半導體以及N型半導體的堆疊。PIN型光電二極體除了P型半導體以及N型半導體之外,還包括I型半導體(本質半導體層)。Currently, photodiodes are often used in touch devices. The photodiode will generate a current after absorbing light. Since the finger or stylus on the touch device will block the light and reduce the photocurrent generated by the photodiode, it can be judged by detecting the current that the finger or touch The position of the pen. Common photodiodes include, for example, PN photodiodes and PIN photodiodes. Generally speaking, a PN-type photodiode includes a stack of P-type semiconductors and N-type semiconductors. PIN-type photodiodes include I-type semiconductors (essential semiconductor layers) in addition to P-type semiconductors and N-type semiconductors.
本發明的至少一實施例提供一種感光元件基板。感光元件基板包括基板、感光元件、感測元件、鈍化層以及發光二極體。感光元件以及感測元件位於基板之上。感光元件包括感光層、第一閘極、第一源極以及第一汲極。感光層包括互相堆疊的第一金屬氧化物層以及第二金屬氧化物層。第一閘極重疊於感光層。第二金屬氧化物層位於第一閘極與第一金屬氧化物層之間。第一源極以及第一汲極電性連接至感光層。感測元件電性連接至感光元件。感測元件包括第三金屬氧化物層、第二閘極、第二源極以及第二汲極。第二閘極重疊於第三金屬氧化物層。第二源極以及第二汲極電性連接至第三金屬氧化物層。鈍化層覆蓋感光元件以及感測元件。發光二極體包括彼此堆疊的第一電極、發光層以及第二電極。第二電極位於鈍化層上,且第二電極具有重疊於感光元件的開口。At least one embodiment of the present invention provides a photosensitive element substrate. The photosensitive element substrate includes a substrate, a photosensitive element, a sensing element, a passivation layer, and a light emitting diode. The photosensitive element and the sensing element are located on the substrate. The photosensitive element includes a photosensitive layer, a first gate, a first source and a first drain. The photosensitive layer includes a first metal oxide layer and a second metal oxide layer stacked on each other. The first gate overlaps the photosensitive layer. The second metal oxide layer is located between the first gate and the first metal oxide layer. The first source and the first drain are electrically connected to the photosensitive layer. The sensing element is electrically connected to the photosensitive element. The sensing element includes a third metal oxide layer, a second gate, a second source and a second drain. The second gate overlaps the third metal oxide layer. The second source and the second drain are electrically connected to the third metal oxide layer. The passivation layer covers the photosensitive element and the sensing element. The light emitting diode includes a first electrode, a light emitting layer and a second electrode stacked on each other. The second electrode is located on the passivation layer, and the second electrode has an opening overlapping the photosensitive element.
本發明的至少一實施例提供一種感光元件基板的製造方法,包括:形成第一金屬氧化物層、第二金屬氧化物層以及第三金屬氧化物層於基板之上,其中感光層包括互相堆疊的第一金屬氧化物層以及第二金屬氧化物層;形成閘介電層於第二金屬氧化物層以及第三金屬層上;形成第一閘極以及第二閘極於閘介電層上,其中第一閘極以及第二閘極分別重疊於感光層以及第三金屬氧化物層,且第二金屬氧化物層位於第一閘極與第一金屬氧化物層之間;形成電性連接至感光層的第一源極以及第一汲極;形成電性連接至第三金屬氧化物層的第二源極以及第二汲極;形成發光二極體以及鈍化層,其中鈍化層位於第一源極、第一汲極、第二源極以及第二汲極之上,發光二極體包括互相堆疊的第一電極、發光層以及第二電極,其中第二電極位於鈍化層上,且第二電極具有重疊於感光層的開口。At least one embodiment of the present invention provides a method for manufacturing a photosensitive element substrate, comprising: forming a first metal oxide layer, a second metal oxide layer, and a third metal oxide layer on the substrate, wherein the photosensitive layers include layers stacked on each other the first metal oxide layer and the second metal oxide layer; forming a gate dielectric layer on the second metal oxide layer and the third metal layer; forming a first gate electrode and a second gate electrode on the gate dielectric layer , wherein the first gate and the second gate respectively overlap the photosensitive layer and the third metal oxide layer, and the second metal oxide layer is located between the first gate and the first metal oxide layer; forming an electrical connection to the first source electrode and the first drain electrode of the photosensitive layer; form the second source electrode and the second drain electrode electrically connected to the third metal oxide layer; form a light emitting diode and a passivation layer, wherein the passivation layer is located at the first On a source, a first drain, a second source and a second drain, the light-emitting diode includes a first electrode, a light-emitting layer and a second electrode stacked on each other, wherein the second electrode is located on the passivation layer, and The second electrode has an opening overlapping the photosensitive layer.
圖1是依照本發明的一實施例的一種感光元件基板的剖面示意圖。FIG. 1 is a schematic cross-sectional view of a photosensitive element substrate according to an embodiment of the present invention.
請參考圖1,感光元件基板10A包括基板100、感光元件T
ph、感測元件T
se、鈍化層140以及發光二極體EL。在本實施例中,感光元件基板10A還包括第一閘介電層110、第二閘介電層120、層間介電層130以及驅動元件T
dr。
Please refer to FIG. 1 , the
基板100之材質可為玻璃、石英、有機聚合物或是不透光/反射材料(例如:導電材料、金屬、晶圓、陶瓷或其他可適用的材料)或是其他可適用的材料。若使用導電材料或金屬時,則在基板100上覆蓋一層絕緣層(未繪示),以避免短路問題。在一些實施例中,基板100為軟性基板,且基板100的材料例如為聚乙烯對苯二甲酸酯(polyethylene terephthalate, PET)、聚二甲酸乙二醇酯(polyethylene naphthalate, PEN)、聚酯(polyester, PES)、聚甲基丙烯酸甲酯(polymethylmethacrylate, PMMA)、聚碳酸酯(polycarbonate, PC)、聚醯亞胺(polyimide, PI)或金屬軟板(Metal Foil)或其他可撓性材質。The material of the
感光元件T
ph、感測元件T
se以及驅動元件T
dr位於基板100之上。感光元件T
ph包括第一底閘極BG1、感光層SL、第一閘極TG1、第一源極S1以及第一汲極D1,其中感光層SL包括互相堆疊的第一金屬氧化物層210以及第二金屬氧化物層212。感測元件T
se包括第二底閘極BG2、第三金屬氧化物層214、第二閘極TG2、第二源極S2以及第二汲極D2。驅動元件T
dr包括第三底閘極BG3、第四金屬氧化物層216、第三閘極TG3、第三源極S3以及第三汲極D3。
The photosensitive element T ph , the sensing element T se and the driving element T dr are located on the
第一底閘極BG1、第二底閘極BG2以及第三底閘極BG3位於基板100之上。在一些實施例中,第一底閘極BG1、第二底閘極BG2以及第三底閘極BG3包括反射材料,例如金屬。在一些實施例中,第一底閘極BG1與基板100之間、第二底閘極BG2與基板100之間以及第三底閘極BG3與基板100之間還包括一層或多層緩衝層,但本發明不以此為限。The first bottom gate BG1 , the second bottom gate BG2 and the third bottom gate BG3 are located on the
第一閘介電層110覆蓋第一底閘極BG1、第二底閘極BG2以及第三底閘極BG3。在一些實施例中,第一閘介電層110的材料包括氧化矽、氮化矽、氮氧化矽、氧化鉿、氧化鋁或其他合適的材料。The first gate
第一金屬氧化物層210位於第一閘介電層110上,且在基板100的頂面的法線方向ND上重疊於第一底閘極BG1。在一些實施例中,第一金屬氧化物層210的材料包括氧化銦鎵鋅(IGZO)、氧化銦錫鋅(ITZO)、氧化鋁鋅錫(AZTO)、氧化銦鎢鋅(IWZO)等四元金屬化合物或包含鎵(Ga)、鋅(Zn)、銦(In)、錫(Sn)、鋁(Al)、鎢(W)中之任三者的三元金屬構成的氧化物。在一些實施例中,第一金屬氧化物層210的厚度t1為10奈米至30奈米。The first
第二金屬氧化物層212位於第一金屬氧化物層210上。第三金屬氧化物層214以及第四金屬氧化物層216位於第一閘介電層110上。在一些實施例中,第二金屬氧化物層212、第三金屬氧化物層214以及第四金屬氧化物層216的材料包括氧化銦鎵鋅(IGZO)、氧化銦錫鋅(ITZO)、氧化鋁鋅錫(AZTO)、氧化銦鎢鋅(IWZO)等四元金屬化合物或包含鎵(Ga)、鋅(Zn)、銦(In)、錫(Sn)、鋁(Al)、鎢(W)中之任三者的三元金屬構成的氧化物。在一些實施例中,第二金屬氧化物層212、第三金屬氧化物層214以及第四金屬氧化物層216的厚度t2為5奈米至50奈米。The second
第二金屬氧化物層212包括源極區sr1、汲極區dr1以及位於源極區sr1與汲極區dr1之間的通道區ch1。第三金屬氧化物層214包括源極區sr2、汲極區dr2以及位於源極區sr2與汲極區dr2之間的通道區ch2。第四金屬氧化物層216包括源極區sr3、汲極區dr3以及位於源極區sr3與汲極區dr3之間的通道區ch3。在一些實施例中,源極區sr1~sr3、汲極區dr1~dr3經摻雜而具有低於通道區ch1~ch3的電阻率。The second
第一金屬氧化物層210的氧濃度小於第二金屬氧化物層212的通道區ch1的氧濃度。在一些實施例中,第一金屬氧化物層210的氧濃度為10 at%至50 at%,且第二金屬氧化物層212的通道區ch1的氧濃度為30 at%至70 at%。在一些實施例中,藉由調整氧濃度,使第一金屬氧化物層210的能隙小於第二金屬氧化物層212的能隙。藉由調整第一金屬氧化物層210及/或第二金屬氧化物層212的能隙,使感光層SL能夠藉由吸收光線(例如可見光(例如紅光、綠光以及藍光)、紅外光、紫外光或其他合適波長的光線)改變通過感光元件T
ph的電流。換句話說,在一些實施例中,藉由調整金屬氧化物層的氧濃度以改變其能隙,使感光元件T
ph可以感應光線。
The oxygen concentration of the first
在其他實施例中,第一金屬氧化物層210選用低能隙的材料,例如銦錫氧化物、銦鋅氧化物、錫氧化物或其他合適的金屬氧化物。換句話說,在其他實施例中,藉由調整金屬氧化物層的成分以改變其能隙,使感光元件T
ph可以感應光線。
In other embodiments, the first
第二閘介電層120覆蓋感光層SL、第三金屬氧化物層214以及第四金屬氧化物層216。在一些實施例中,第二閘介電層120的材料包括氧化矽、氮化矽、氮氧化矽、氧化鉿、氧化鋁或其他合適的材料。The second gate
第一閘極TG1、第二閘極TG2以及第三閘極TG3位於第二閘介電層120上。第一閘極TG1、第二閘極TG2以及第三閘極TG3分別重疊於感光層SL、第三金屬氧化物層214以及第四金屬氧化物層216。感光層SL位於第一底閘極BG1與第一閘極TG1之間。第二金屬氧化物層212位於第一閘極TG1與第一金屬氧化物層210之間。第三金屬氧化物層214位於第二底閘極BG2與第二閘極TG2之間。第四金屬氧化物層216位於第三底閘極BG3與第三閘極TG3之間。在一些實施例中,第一閘極TG1、第二閘極TG2以及第三閘極TG3的材料可包括金屬,例如鉻(Cr)、金(Au)、銀(Ag)、銅(Cu)、錫(Sn)、鉛(Pb)、鉿(Hf)、鎢(W)、鉬(Mo)、釹(Nd)、鈦(Ti)、鉭(Ta)、鋁(Al)、鋅(Zn)或上述金屬的任意組合之合金或上述金屬及/或合金之疊層,但本發明不以此為限。第一閘極TG1、第二閘極TG2以及第三閘極TG3也可以使用其他導電材料,例如:金屬的氮化物、金屬的氧化物、金屬的氮氧化物、金屬與其它導電材料的堆疊層或是其他具有導電性質之材料。The first gate TG1 , the second gate TG2 and the third gate TG3 are located on the second gate
層間介電層130設置於閘介電層120上。層間介電層130覆蓋第一閘極TG1、第二閘極TG2以及第三閘極TG3。在一些實施例中,層間介電層130的材料包括氧化矽、氮化矽、氮氧化矽、氧化鉿、氧化鋁或其他絕緣材料。The
第一源極S1、第一汲極D1、第二源極S2、第二汲極D2、第三源極S3以及第三汲極D3位於層間介電層130上。第一源極S1以及第一汲極D1電性連接至感光層SL的源極區sr1與汲極區dr1。第二源極S2以及第二汲極D2電性連接至第三金屬氧化物層214的源極區sr2與汲極區dr2。第三源極S3以及第三汲極D3電性連接至第四金屬氧化物層216的源極區sr3與汲極區dr3。在一些實施例中,第一源極S1、第一汲極D1、第二源極S2、第二汲極D2、第三源極S3以及第三汲極D3的材料可包括金屬,例如鉻、金、銀、銅、錫、鉛、鉿、鎢、鉬、釹、鈦、鉭、鋁、鋅或上述金屬的任意組合之合金或上述金屬及/或合金之疊層,但本發明不以此為限。第一源極S1、第一汲極D1、第二源極S2、第二汲極D2、第三源極S3以及第三汲極D3也可以使用其他導電材料,例如:金屬的氮化物、金屬的氧化物、金屬的氮氧化物、金屬與其它導電材料的堆疊層或是其他具有導電性質之材料。The first source S1 , the first drain D1 , the second source S2 , the second drain D2 , the third source S3 and the third drain D3 are located on the
感測元件T se的第二汲極D2電性連接至感光元件T ph的第一源極S1。在一些實施例中,第二汲極D2與第一源極S1連成一體。 The second drain D2 of the sensing element T se is electrically connected to the first source S1 of the photosensitive element T ph . In some embodiments, the second drain D2 is integrated with the first source S1.
鈍化層140覆蓋感光元件T
ph、感測元件T
se以及驅動元件T
dr。在一些實施例中,鈍化層140的材料包括氧化矽、氮化矽、氮氧化矽、氧化鉿、氧化鋁、有機絕緣材料或其他絕緣材料。在本實施例中,鈍化層140具有重疊於第三源極S3的開口O。
The
發光二極體EL包括彼此堆疊的第一電極E1、發光層EM以及第二電極E2。第一電極E1位於鈍化層140的開口O的底部,且電性連接至驅動元件T
dr的第三源極S3。在一些實施例中,第一電極E1的材料包括銦錫氧化物(ITO)、銦鋅氧化物(IZO)或其他合適的材料。在一些實施例中,第一電極E1與第三源極S3包括不同的材料,但本發明不以此為限。在其他實施例中,第一電極E1與第三源極S3實質上為同一個導電結構。發光層EM位於鈍化層140的開口O中,且位於第一電極E1上。在一些實施例中,發光層EM包括有機發光材料。第二電極E2位於鈍化層140上,且第二電極E2具有重疊於感光元件T
ph的感光層SL的開口OP。在一些實施例中,第二電極E2包括薄金屬或其他合適的透明導電材料。
The light emitting diode EL includes a first electrode E1, a light emitting layer EM, and a second electrode E2 stacked on each other. The first electrode E1 is located at the bottom of the opening O of the
基於上述,感光元件T
ph包括互相堆疊的第一金屬氧化物層210以及第二金屬氧化物層212,因此不需要設置PN型光電二極體或PIN型光電二極體就可以使感光元件基板具有感測光線的功能。此外,感光元件T
ph的第一底閘極BG1位於感光層SL與基板100之間,藉此可以利用第一底閘極BG1反射光線以增加感光層SL所接收的光線。發光二極體EL的第二電極E2具有重疊於感光元件T
ph的開口OP,可以避免第二電極E2對感光元件T
ph的收光能力造成影響。另外,在一些實施例中,光線的感測以及發光二極體的驅動可以有不同周期的掃描時序,驅動元件T
dr的訊號與感光元件T
ph的訊號不會受彼此所影響。
Based on the above, the photosensitive element T ph includes the first
圖2A至圖2G是圖1的感光元件基板10A的製造方法的剖面示意圖。2A to 2G are schematic cross-sectional views of the manufacturing method of the
請參考圖2A,形成第一底閘極BG1、第二底閘極BG2以及第三底閘極BG3於基板100之上。在一些實施例中,形成第一底閘極BG1、第二底閘極BG2以及第三底閘極BG3的方法包括微影蝕刻製程。在一些實施例中,第一底閘極BG1、第二底閘極BG2以及第三底閘極BG3屬於同一圖案化膜層,且第一底閘極BG1、第二底閘極BG2以及第三底閘極BG3具有相同的材料與相同的厚度。接著,形成第一閘介電層110於第一底閘極BG1、第二底閘極BG2以及第三底閘極BG3上。Referring to FIG. 2A , a first bottom gate BG1 , a second bottom gate BG2 and a third bottom gate BG3 are formed on the
請參考圖2B與圖2C,形成第一金屬氧化物層210、第二金屬氧化物層212、第三金屬氧化物層214以及第四金屬氧化物層216於基板100之上。Referring to FIG. 2B and FIG. 2C , a first
首先,如圖2B所示,形成第一金屬氧化物層210於第一閘介電層110上。形成第一金屬氧化物層210的方法包括以下步驟:首先,在第一閘介電層110上形成毯覆的半導體材料層(未繪示);接著,利用微影製程,在半導體材料層上形成圖案化光阻(未繪示);繼之,利用圖案化光阻作為罩幕,來對半導體材料層進行濕式或乾式蝕刻製程,以形成第一金屬氧化物層210;之後,移除圖案化光阻。First, as shown in FIG. 2B , a first
然後,如圖2C所示,形成第二金屬氧化物層212’、第三金屬氧化物層214’以及第四金屬氧化物層216’於第一金屬氧化物層210以及第一閘介電層110上。形成第二金屬氧化物層212’、第三金屬氧化物層214’以及第四金屬氧化物層216’的方法包括以下步驟:首先,在第一金屬氧化物層210以及第一閘介電層110上形成毯覆的半導體材料層(未繪示);接著,利用微影製程,在半導體材料層上形成圖案化光阻(未繪示);繼之,利用圖案化光阻作為罩幕,來對半導體材料層進行濕式或乾式蝕刻製程,以形成第二金屬氧化物層212’、第三金屬氧化物層214’以及第四金屬氧化物層216’;之後,移除圖案化光阻。第二金屬氧化物層212’、第三金屬氧化物層214’以及第四金屬氧化物層216’屬於同一圖案化膜層。感光層SL’包括互相堆疊的第一金屬氧化物層210以及第二金屬氧化物層212’。Then, as shown in FIG. 2C, a second metal oxide layer 212', a third metal oxide layer 214' and a fourth metal oxide layer 216' are formed on the first
請參考圖2D,形成第二閘介電層120於第二金屬氧化物層212’、第三金屬氧化物層214’以及第四金屬氧化物層216’上。形成第一閘極TG1、第二閘極TG2以及第三閘極TG3於第二閘介電層120上。在一些實施例中,形成第一閘極TG1、第二閘極TG2以及第三閘極TG3的方法包括微影蝕刻製程。在一些實施例中,第一閘極TG1、第二閘極TG2以及第三閘極TG3屬於同一圖案化膜層,且第一閘極TG1、第二閘極TG2以及第三閘極TG3具有相同的材料與相同的厚度。Referring to FIG. 2D, the second
第一閘極TG1、第二閘極TG2以及第三閘極TG3在基板100的頂面的法線方向ND上分別重疊於感光層SL’、第三金屬氧化物層214’以及第四金屬氧化物層216’,且第二金屬氧化物層212’位於第一閘極TG1與第一金屬氧化物層210之間。The first gate TG1, the second gate TG2 and the third gate TG3 overlap the photosensitive layer SL', the third metal oxide layer 214' and the fourth metal oxide layer 214' respectively in the normal direction ND of the top surface of the
以第一閘極TG1、第二閘極TG2以及第三閘極TG3為罩幕,對感光層SL’、第三金屬氧化物層214’以及第四金屬氧化物層216’執行摻雜製程P,以形成包括源極區sr1、汲極區dr1以及通道區ch1的第二金屬氧化物層212、包括源極區sr2、汲極區dr2以及通道區ch2的第三金屬氧化物層214以及包括源極區sr3、汲極區dr3以及通道區ch3的第四金屬氧化物層216。在本實施例中,在基板100的頂面的法線方向ND上,通道區ch1、通道區ch2以及通道區ch3分別重疊於第一閘極TG1、第二閘極TG2以及第三閘極TG3。透過摻雜製程P降低源極區sr1~sr3以及汲極區dr1~dr3的電阻率。在一些實施例中,摻雜製程P例如為氫電漿製程或其他合適的製程。Using the first gate TG1, the second gate TG2 and the third gate TG3 as masks, the doping process P is performed on the photosensitive layer SL', the third metal oxide layer 214' and the fourth metal oxide layer 216' , to form the second
請參考圖2E,形成層間介電層130於第二閘介電層120上。層間介電層130包覆第一閘極TG1、第二閘極TG2以及第三閘極TG3。Referring to FIG. 2E , an
請參考圖2F,執行一次或多次蝕刻製程以形成穿過層間介電層130以及第二閘介電層120的第一接觸孔V1、第二接觸孔V2、第三接觸孔V3、第四接觸孔V4、第五接觸孔V5以及第六接觸孔V6。第一接觸孔V1以及第二接觸孔V2重疊並暴露出第二金屬氧化物層212的汲極區dr1以及源極區sr1。第三接觸孔V3以及第四接觸孔V4重疊並暴露出第三金屬氧化物層214的汲極區dr2以及源極區sr3。第五接觸孔V5以及第六接觸孔V6重疊並暴露出第四金屬氧化物層216的汲極區dr3以及源極區sr3。2F, perform one or more etching processes to form the first contact hole V1, the second contact hole V2, the third contact hole V3, the fourth The contact hole V4, the fifth contact hole V5 and the sixth contact hole V6. The first contact hole V1 and the second contact hole V2 overlap and expose the drain region dr1 and the source region sr1 of the second
請參考圖2G,形成第一源極S1、第一汲極D1、第二源極S2、第二汲極D2、第三源極S3以及第三汲極D3於層間介電層130上。第一汲極D1以及第一源極S1分別位於第一接觸孔V1以及第二接觸孔V2中。第二汲極D2以及第二源極S2分別位於第三接觸孔V3以及第四接觸孔V4中。第三汲極D3以及第三源極S3分別位於第五接觸孔V5以及第六接觸孔V6中。Referring to FIG. 2G , a first source S1 , a first drain D1 , a second source S2 , a second drain D2 , a third source S3 and a third drain D3 are formed on the
第一源極S1以及第一汲極D1電性連接至感光層SL的源極區sr1以及汲極區dr1。第二源極S2以及第二汲極D2電性連接至第三金屬氧化物層214的源極區sr2以及汲極區dr2。第三源極S3以及第三汲極D3電性連接至第四金屬氧化物層216的源極區sr3以及汲極區dr3。The first source S1 and the first drain D1 are electrically connected to the source region sr1 and the drain region dr1 of the photosensitive layer SL. The second source S2 and the second drain D2 are electrically connected to the source region sr2 and the drain region dr2 of the third
最後請回到圖1,形成發光二極體EL以及鈍化層140,其中鈍化層140位於第一源極S1、第一汲極D1、第二源極S2、及第二汲極D2、第三源極S3以及第三汲極D3之上。發光二極體EL包括互相堆疊的第一電極E1、發光層EM以及第二電極E2。第二電極E2位於鈍化層140上,且第二電極E2具有重疊於感光元件T
ph的開口OP。
Finally, please return to FIG. 1 to form a light emitting diode EL and a
至此,感光元件基板10A大致完成。So far, the
圖3是依照本發明的一實施例的一種感光元件基板的剖面示意圖。在此必須說明的是,圖3的實施例沿用圖1的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。FIG. 3 is a schematic cross-sectional view of a photosensitive element substrate according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 3 uses the component numbers and parts of the content in the embodiment in FIG. 1 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.
圖3的感光元件基板10B與圖1的感光元件基板10A的主要差異在於:感光元件基板10B更包括多個金屬奈米顆粒NP。The main difference between the
請參考圖3,金屬奈米顆粒NP位於第一金屬氧化物層210上。舉例來說,金屬奈米顆粒NP位於第一金屬氧化物層210與基板100之間。金屬奈米顆粒NP例如包括金或其他合適的材料。在一些實施例中,金屬奈米顆粒NP的粒徑為10奈米至60奈米。Referring to FIG. 3 , metal nanoparticles NP are located on the first
基於上述,藉由金屬奈米顆粒NP的設置,可以提升感光元件T ph的背通道效應,藉此增加感光元件T ph的感光能力。 Based on the above, the back channel effect of the T ph of the photosensitive element can be improved by the arrangement of the metal nanoparticles NP, thereby increasing the photosensitivity of the T ph of the photosensitive element.
圖4是依照本發明的一實施例的一種感光元件基板的剖面示意圖。在此必須說明的是,圖4的實施例沿用圖3的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。FIG. 4 is a schematic cross-sectional view of a photosensitive element substrate according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 4 follows the component numbers and partial content of the embodiment in FIG. 3 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.
圖4的感光元件基板10C與圖3的感光元件基板10B的主要差異在於:感光元件基板10C的金屬奈米顆粒NP位於第一金屬氧化物層210與第二金屬氧化物層212之間。The main difference between the
基於上述,藉由金屬奈米顆粒NP的設置,可以提升感光元件T ph的背通道效應,藉此增加感光元件T ph的感光能力。 Based on the above, the back channel effect of the T ph of the photosensitive element can be improved by the arrangement of the metal nanoparticles NP, thereby increasing the photosensitivity of the T ph of the photosensitive element.
圖5是依照本發明的一實施例的一種感光元件基板的等效電路示意圖。圖5例如是前述任一實施例中的感光元件基板10A~10C的等效電路示意圖。FIG. 5 is a schematic diagram of an equivalent circuit of a photosensitive element substrate according to an embodiment of the present invention. FIG. 5 is, for example, a schematic diagram of an equivalent circuit of the
請參考圖5,感光元件基板包括開關元件T sw、儲存電容Cst、驅動元件T dr、發光元件EL、感光元件T ph以及感測元件T se。 Please refer to FIG. 5 , the photosensitive element substrate includes a switching element T sw , a storage capacitor Cst, a driving element T dr , a light emitting element EL, a photosensitive element T ph and a sensing element T se .
開關元件T sw的閘極電性連接於電壓V S1(例如為掃描線電壓),開關元件T sw的汲極電性連接於電壓V data(例如為資料線電壓),開關元件T sw的源極電性連接於第一節點a。電壓V S1用於控制開關元件T sw的開關。在一些實施例中,開關元件T sw為雙閘極型薄膜電晶體,且開關元件T sw的兩個閘極皆電性連接至電壓V S1。 The gate of the switching element T sw is electrically connected to the voltage V S1 (such as the scan line voltage), the drain of the switching element T sw is electrically connected to the voltage V data (such as the data line voltage), and the source of the switching element T sw is The pole is electrically connected to the first node a. The voltage V S1 is used to control the switching of the switching element T sw . In some embodiments, the switching element T sw is a double-gate thin film transistor, and both gates of the switching element T sw are electrically connected to the voltage V S1 .
儲存電容Cst的一端電性連接於第一節點a,儲存電容Cst的另一端電性連接於第二節點b。One end of the storage capacitor Cst is electrically connected to the first node a, and the other end of the storage capacitor Cst is electrically connected to the second node b.
驅動元件T dr的閘極(例如圖1至圖4中的第三閘極TG3)電性連接於第一節點a,驅動元件T dr的汲極(例如圖1至圖4中的第三汲極D3)電性連接於第三節點c以及電壓V DD,驅動元件T dr的源極(例如圖1至圖4中的第三源極S3)電性連接於第二節點b。由於驅動元件T dr的閘極電性連接至儲存電容Cst,即使關閉開關元件T sw,驅動元件T dr仍可持續導通一小段時間。在一些實施例中,驅動元件T dr為雙閘極型薄膜電晶體,且驅動元件T dr的其中一個閘極(例如圖1至圖4中的第三底閘極BG3)電性連接至驅動元件T dr的源極(例如圖1至圖4中的第三源極S3)。 The gate of the driving element T dr (such as the third gate TG3 in FIGS. 1 to 4 ) is electrically connected to the first node a, and the drain of the driving element T dr (such as the third drain in FIGS. 1 to 4 The terminal D3) is electrically connected to the third node c and the voltage V DD , and the source of the driving element T dr (such as the third source S3 in FIGS. 1 to 4 ) is electrically connected to the second node b. Since the gate of the driving element T dr is electrically connected to the storage capacitor Cst, even if the switching element T sw is turned off, the driving element T dr can still be turned on for a short period of time. In some embodiments, the driving element T dr is a double-gate thin film transistor, and one of the gates of the driving element T dr (for example, the third bottom gate BG3 in FIGS. 1 to 4 ) is electrically connected to the driving The source of the element T dr (for example, the third source S3 in FIGS. 1 to 4 ).
發光元件EL的第一電極(例如圖1至圖4中的第一電極E1)電性連接於第二節點b,發光元件EL的第二電極(例如圖1至圖4中的第二電極E2)電性連接於電壓V SS。發光元件EL的亮度會因為通過驅動元件T dr之驅動電流的大小不同而改變。發光元件EL例如是微型發光二極體、有機發光二極體或其他發光元件。 The first electrode of the light emitting element EL (such as the first electrode E1 in FIGS. 1 to 4 ) is electrically connected to the second node b, and the second electrode of the light emitting element EL (such as the second electrode E2 in FIGS. 1 to 4 ) is electrically connected to the voltage V SS . The brightness of the light emitting element EL will vary due to the magnitude of the driving current passing through the driving element T dr . The light emitting element EL is, for example, a micro light emitting diode, an organic light emitting diode or other light emitting elements.
感光元件T ph的閘極(例如圖1至圖4中的第一閘極TG1)電性連接至電壓V S3,感光元件T ph的汲極(例如圖1至圖4中的第一汲極D1)在第三節點c處電性連接於電壓V DD以及驅動元件T dr的汲極。在一些實施例中,感光元件T ph為雙閘極型薄膜電晶體,且感光元件T ph的其中一個閘極(例如圖1至圖4中的第一底閘極BG1)電性連接感光元件T ph的源極(例如圖1至圖4中的第一源極S1)。 The gate of the photosensitive element T ph (such as the first gate TG1 in FIGS. 1 to 4 ) is electrically connected to the voltage V S3 , and the drain of the photosensitive element T ph (such as the first drain in FIGS. 1 to 4 D1) is electrically connected to the voltage V DD and the drain of the driving element T dr at the third node c. In some embodiments, the photosensitive element T ph is a double-gate TFT, and one of the gates of the photosensitive element T ph (for example, the first bottom gate BG1 in FIGS. 1 to 4 ) is electrically connected to the photosensitive element. The source of T ph (for example, the first source S1 in FIG. 1 to FIG. 4 ).
感測元件T se的閘極(例如圖1至圖4中的第二閘極TG2)電性連接至電壓V S2。感測元件T se的汲極(例如圖1至圖4中的第二汲極D2)電性連接於感光元件T ph的源極。感測元件T se的源極(例如圖1至圖4中的第二源極S2)電性連接於電壓V ses。在一些實施例中,感測元件T se為雙閘極型薄膜電晶體,且感測元件T se的兩個閘極(例如圖1至圖4中的第二閘極TG2以及第二底閘極BG2)皆電性連接至電壓V S2。 The gate of the sensing element T se (eg, the second gate TG2 in FIGS. 1 to 4 ) is electrically connected to the voltage V S2 . The drain of the sensing element T se (such as the second drain D2 in FIGS. 1 to 4 ) is electrically connected to the source of the photosensitive element T ph . The source of the sensing element T se (eg, the second source S2 in FIGS. 1 to 4 ) is electrically connected to the voltage V ses . In some embodiments, the sensing element T se is a double-gate thin film transistor, and the two gates of the sensing element T se (such as the second gate TG2 and the second bottom gate in FIGS. 1 to 4 poles BG2) are electrically connected to the voltage V S2 .
圖6是依照本發明的一實施例的一種感光元件基板的等效電路示意圖。在此必須說明的是,圖6的實施例沿用圖3的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。FIG. 6 is a schematic diagram of an equivalent circuit of a photosensitive element substrate according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 6 follows the component numbers and part of the content of the embodiment in FIG. 3 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.
請參考圖6,在本實施例中,感光元件T ph為雙閘極型薄膜電晶體,且感光元件T ph的兩個閘極(例如圖1至圖4中的第一閘極TG1以及第一底閘極BG1)皆電性連接至電壓V S3。 Please refer to FIG. 6. In this embodiment, the photosensitive element T ph is a double-gate thin film transistor, and the two gates of the photosensitive element T ph (for example, the first gate TG1 and the first gate TG1 in FIGS. 1 to 4 A bottom gate BG1) is electrically connected to the voltage V S3 .
10A, 10B, 10C:感光元件基板 100:基板 110:第一閘介電層 120:第二閘介電層 130:層間介電層 140:鈍化層 210:第一金屬氧化物層 212, 212’:第二金屬氧化物層 214, 214’:第三金屬氧化物層 216, 216’:第四金屬氧化物層 a:第一節點 b:第二節點 c:第三節點 BG1:第一底閘極 BG2:第二底閘極 BG3:第三底閘極 ch1, ch2, ch3:通道區 Cst:儲存電容 D1:第一汲極 D2:第二汲極 D3:第三汲極 dr1, dr2, dr3:汲極區 E1:第一電極 E2:第二電極 EL:發光二極體 EM:發光層 ND:法線方向 NP:金屬奈米顆粒 O, OP:開口 P:摻雜製程 SL, SL’:感光層 S1:第一源極 S2:第二源極 S3:第三源極 sr1, sr2, sr3:源極區 TG1:第一閘極 TG2:第二閘極 TG3:第三閘極 T dr:驅動元件 T ph:感光元件 T se:感測元件 T sw:開關元件 t1, t2:厚度 V1:第一接觸孔 V2:第二接觸孔 V3:第三接觸孔 V4:第四接觸孔 V5:第五接觸孔 V6:第六接觸孔 V S1, V data, V S2, V S3, V SS, V DD, V ses:電壓 10A, 10B, 10C: photosensitive element substrate 100: substrate 110: first gate dielectric layer 120: second gate dielectric layer 130: interlayer dielectric layer 140: passivation layer 210: first metal oxide layer 212, 212' : second metal oxide layer 214, 214': third metal oxide layer 216, 216': fourth metal oxide layer a: first node b: second node c: third node BG1: first bottom gate Pole BG2: second bottom gate BG3: third bottom gate ch1, ch2, ch3: channel area Cst: storage capacitor D1: first drain D2: second drain D3: third drain dr1, dr2, dr3 : drain region E1: first electrode E2: second electrode EL: light-emitting diode EM: light-emitting layer ND: normal direction NP: metal nanoparticles O, OP: opening P: doping process SL, SL': Photosensitive layer S1: first source S2: second source S3: third source sr1, sr2, sr3: source region TG1: first gate TG2: second gate TG3: third gate T dr : Driving element T ph : photosensitive element T se : sensing element T sw : switching element t1, t2: thickness V1: first contact hole V2: second contact hole V3: third contact hole V4: fourth contact hole V5: second contact hole Five contact holes V6: sixth contact holes V S1 , V data , V S2 , V S3 , V SS , V DD , V ses : voltage
圖1是依照本發明的一實施例的一種感光元件基板的剖面示意圖。 圖2A至圖2G是圖1的感光元件基板的製造方法的剖面示意圖。 圖3是依照本發明的一實施例的一種感光元件基板的剖面示意圖。 圖4是依照本發明的一實施例的一種感光元件基板的剖面示意圖。 圖5是依照本發明的一實施例的一種感光元件基板的等效電路示意圖。 圖6是依照本發明的一實施例的一種感光元件基板的等效電路示意圖。 FIG. 1 is a schematic cross-sectional view of a photosensitive element substrate according to an embodiment of the present invention. 2A to 2G are schematic cross-sectional views of the manufacturing method of the photosensitive element substrate of FIG. 1 . FIG. 3 is a schematic cross-sectional view of a photosensitive element substrate according to an embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a photosensitive element substrate according to an embodiment of the present invention. FIG. 5 is a schematic diagram of an equivalent circuit of a photosensitive element substrate according to an embodiment of the present invention. FIG. 6 is a schematic diagram of an equivalent circuit of a photosensitive element substrate according to an embodiment of the present invention.
10A:感光元件基板 10A: Photosensitive element substrate
100:基板 100: Substrate
110:第一閘介電層 110: first gate dielectric layer
120:第二閘介電層 120: second gate dielectric layer
130:層間介電層 130: interlayer dielectric layer
140:鈍化層 140: passivation layer
210:第一金屬氧化物層 210: first metal oxide layer
212:第二金屬氧化物層 212: second metal oxide layer
214:第三金屬氧化物層 214: the third metal oxide layer
216:第四金屬氧化物層 216: the fourth metal oxide layer
BG1:第一底閘極 BG1: the first bottom gate
BG2:第二底閘極 BG2: The second bottom gate
BG3:第三底閘極 BG3: third bottom gate
ch1,ch2,ch3:通道區 ch1, ch2, ch3: channel area
D1:第一汲極 D1: the first drain
D2:第二汲極 D2: the second drain
D3:第三汲極 D3: The third drain
dr1,dr2,dr3:汲極區 dr1, dr2, dr3: drain area
E1:第一電極 E1: first electrode
E2:第二電極 E2: second electrode
EL:發光二極體 EL: light emitting diode
EM:發光層 EM: luminous layer
ND:法線方向 ND: normal direction
O,OP:開口 O, OP: open
SL:感光層 SL: photosensitive layer
S1:第一源極 S1: first source
S2:第二源極 S2: second source
S3:第三源極 S3: The third source
sr1,sr2,sr3:源極區 sr1, sr2, sr3: source region
TG1:第一閘極 TG1: first gate
TG2:第二閘極 TG2: the second gate
TG3:第三閘極 TG3: The third gate
Tdr:驅動元件 T dr : drive element
Tph:感光元件 T ph : photosensitive element
Tse:感測元件 T se : sensing element
t1,t2:厚度 t1, t2: thickness
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