TW202326994A - 引線框架、引線框架的製造方法、半導體裝置及半導體裝置的製造方法 - Google Patents
引線框架、引線框架的製造方法、半導體裝置及半導體裝置的製造方法 Download PDFInfo
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- TW202326994A TW202326994A TW111148708A TW111148708A TW202326994A TW 202326994 A TW202326994 A TW 202326994A TW 111148708 A TW111148708 A TW 111148708A TW 111148708 A TW111148708 A TW 111148708A TW 202326994 A TW202326994 A TW 202326994A
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- Prior art keywords
- lead
- lead frame
- manufacturing
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- 239000004065 semiconductor Substances 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 238000007747 plating Methods 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 238000007789 sealing Methods 0.000 claims description 27
- 239000011347 resin Substances 0.000 claims description 26
- 229920005989 resin Polymers 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 238000000227 grinding Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 15
- 125000006850 spacer group Chemical group 0.000 description 13
- 238000005192 partition Methods 0.000 description 10
- 238000009713 electroplating Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract
一種引線框架、引線框架的製造方法、半導體裝置及半導體裝置的製造方法,其能抑制引線框架的變形且使半導體裝置薄型化。具有:晶片銲墊部,其具有第一面和與第一面相反側的第二面;引線部,其具有與第一面齊平的第三面、以及與第三面相反側的第四面;連結部,其連接晶片銲墊部和引線部,連結部在俯視下具有在晶片銲墊部和引線部之間包圍晶片銲墊部的第一區域,第一區域具有與第一面及第三面齊平的第五面、以及與第五面相反側的第六面,第二面位於比第四面靠第一面、第三面以及第五面側,第六面位於比第二面靠第一面、第三面以及第五面側。
Description
本發明係關於引線框架、引線框架的製造方法、半導體裝置及半導體裝置的製造方法。
對於使用引線框架而被製造的半導體裝置,存在薄型化的需求。
<先前技術文獻>
<專利文獻>
專利文獻1: 日本特開第2012-69886號
專利文獻2: 日本特開第2011-29335號
<發明欲解決之問題>
雖然可以考慮藉由使引線框架薄型化而使半導體裝置薄型化,但是在使引線框架薄型化的情況下,在半導體元件的搭載時、藉由密封樹脂進行密封時等,引線框架容易變形。
本發明的目的在於,提供一種引線框架、引線框架的製造方法、半導體裝置以及半導體裝置的製造方法,其能夠抑制引線框架的變形且能夠使半導體裝置薄型化。
<用於解決問題之手段>
根據本發明的一個方式,提供一種引線框架,具有:晶片銲墊部,其具有第一面和與該第一面相反側的第二面;引線部,其具有與該第一面齊平的第三面、以及與該第三面相反側的第四面;連結部,其連接該晶片銲墊部和該引線部,該連結部在俯視下具有在該晶片銲墊部和該引線部之間包圍該晶片銲墊部的第一區域,該第一區域具有與該第一面及該第三面齊平的第五面、以及與該第五面相反側的第六面,該第二面位於比該第四面靠該第一面、該第三面以及該第五面側,該第六面位於比該第二面靠該第一面、該第三面以及該第五面側。 <發明之功效>
根據公開的技術,能夠抑制引線框架的變形且使半導體裝置薄型化。
以下,參照附圖對實施方式具體進行說明。需要說明的是,在本說明書以及附圖中,對於具有實質相同的功能構成的構成要素,有時藉由賦予相同的符號而省略重複的說明。在本發明中,為了方便,將引線框架的用於搭載半導體晶片側設定為一側或上側,將其相反側設定為另一側或下側。另外,將引線框架的用於搭載半導體晶片的面設定為一個面或上表面,將其相反側的面設定為另一面或下表面。但是,引線框架以及半導體裝置可以在上下反轉的狀態下進行使用,或以任意的角度進行配置。另外,俯視是指自引線框架的一個面的法線方向觀察對象物,俯視形狀是指自引線框架的一個面的法線方向觀察對象物的形狀。
(第一實施方式)
首先,對於第一實施方式進行說明。
[引線框架的構造]
對於第一實施方式的引線框架的構造進行說明。圖1是示出第一實施方式的引線框架的概要的圖。圖2是將圖1中的一部分放大示出的俯視圖。圖3是示出第一實施方式的引線框架的剖視圖。圖3的(a)相當於沿圖2中的IIIa-IIIa線的剖視圖。圖3的(b)相當於沿圖2中的IIIb-IIIb線的剖視圖。
第一實施方式的引線框架100是在一個面上搭載半導體晶片,並且被密封樹脂覆蓋而成為半導體裝置的引線框架。引線框架100具有複數個單片化區域101。例如,單片化區域101具有矩形的俯視形狀,16個單片化區域101排列為4行4列而構成單片化區域群102。引線框架100例如具有3個單片化區域群102。單片化區域群102藉由外框部151彼此連結。外框部151設於各單片化區域群102的外側,在引線框架100的外緣部具有形成為邊框狀的部分和在相鄰的單片化區域群102之間形成為直線狀的部分。
各單片化區域群102具有設於相鄰的單片化區域101之間的分隔桿152。分隔桿152在俯視下配置為井字狀。分隔桿(section bar)有時被稱為阻擋棒(dam bar)。
各單片化區域101具有晶片銲墊部11、引線部12、以及複數個電鍍引出部153。引線部12配置於晶片銲墊部11的周圍。電鍍引出部153的一部分將分隔桿152和引線部12彼此連接。電鍍引出部153的另一部分將分隔桿152和晶片銲墊部彼此連接。
引線框架100具有在被分隔桿152包圍的區域內設置的連結部20。連結部20將晶片銲墊部11、引線部12、分隔桿152、以及電鍍引出部153彼此連結。連結部20具有第一區域21和第二區域22。第一區域21在俯視下在晶片銲墊部11與複數個引線部12之間包圍晶片銲墊部11。第二區域22在俯視下位於相鄰的兩個引線部12之間。
晶片銲墊部11具有一個面11a(上表面)和與一個面11a相反側的另一面11b(下表面)。引線部12具有一個面12a(上表面)和與一個面12a相反側的另一面12b(下表面)。分隔桿152具有一個面152a(上表面)和與一個面152a相反側的另一面152b(下表面)。電鍍引出部153具有一個面153a(上表面)和與一個面153a相反側的另一面153b(下表面)。連結部20具有一個面20a(上表面)和與一個面20a相反側的另一面20b(下表面)。
晶片銲墊部11的另一面11b、引線部12的另一面12b、分隔桿152的另一面152b、電鍍引出部153的另一面153b以及連結部20的另一面20b彼此齊平。晶片銲墊部11的另一面11b、引線部12的另一面12b、分隔桿152的另一面152b、電鍍引出部153的另一面153b以及連結部20的另一面20b包含於引線框架100的下表面100b。
晶片銲墊部11的一個面11a、引線部12的一個面12a、分隔桿152的一個面152a以及電鍍引出部153的一個面153a與引線框架100的下表面100b平行。晶片銲墊部11的一個面11a、分隔桿152的一個面152a以及電鍍引出部153的一個面153a位於比引線部12的一個面12a靠引線框架100的下表面100b側。
連結部20的一個面20a位於比晶片銲墊部11的一個面11a靠引線框架100的下表面100b側。連結部20的一個面20a在自與引線框架100的下表面100b平行的方向的剖視中可以形成為凹狀,亦可以包括以朝向引線框架100的下表面100b成為凸狀的方式彎曲的曲面。
引線框架100進一步可以具有設於引線部12的一個面12a的鍍層31。鍍層31例如包括自引線部12的一個面12a側依次層疊的鎳層、鈀層以及金層。鍍層31還可以包括銀層。
[引線框架的製造方法]
接下來,對於第一實施方式的引線框架100的製造方法進行說明。圖4~圖12是示出第一實施方式的引線框架的製造方法的圖。圖4(a)~圖12(a)是俯視圖,圖4(b)~圖12(b)是剖視圖。圖6~圖12示出了一個單片化區域101。
首先,如圖4所示,準備規定形狀的金屬制的金屬板10。金屬板10是最終沿虛線所示切割線被切割而針對每個單片化區域101進行單片化的部件。作為金屬板10的材料,例如,可以使用Cu、Cu合金、42合金等。金屬板10的厚度例如可以設定為約100μm~300μm。圖4的(b)相當於沿圖4的(a)中的IVb-IVb線的剖視圖。
接下來,如圖5所示,於金屬板10的上表面形成感光性的抗蝕層161,於金屬板10的下表面形成感光性的抗蝕層162。抗蝕層161以及162例如可以藉由抗蝕液的塗布以及乾燥來形成,亦可以藉由抗蝕膜的黏貼來形成。作為抗蝕層161以及162,例如,可以使用環氧樹脂或丙烯酸樹脂等的乾膜抗蝕層、電沉積抗蝕層等。圖5的(b)相當於沿圖5的(a)中的Vb-Vb線的剖視圖。
接下來,如圖6所示,藉由進行抗蝕層161的曝光以及顯影,在抗蝕層161中形成被覆圖案161S、開口部161T以及虛置圖案161U。被覆圖案161S是用於在金屬板10上形成引線部12的部分。開口部161T是用於在金屬板10上形成連結部20的部分。虛置圖案161U是用於在金屬板10上形成晶片銲墊部11、外框部151、分隔桿152以及電鍍引出部153的圖案。如圖13所示,虛置圖案161U包括比開口部161T小的複數個開口部161Z。開口部161Z例如配置為棋盤花紋狀。圖13是示出虛置圖案161U的一個例子的俯視圖。圖6的(b)相當於沿圖6的(a)中的VIb-VIb線的剖視圖。需要說明的是,圖13所示虛置圖案161U是一個例子,開口部161Z的排列不限於棋盤花紋狀。
接下來,如圖7所示,將抗蝕層161以及162作為蝕刻掩模而自金屬板10的上表面側進行金屬板10的半蝕刻(例如,濕式蝕刻)。在金屬板10為銅的情況下,在金屬板10的半蝕刻中,例如,可以使用氯化鐵或氯化銅的水溶液。在半蝕刻中,由於開口部161T比開口部161Z大,因此在開口部161T的下方中,與開口部161Z的下方相比,金屬板10的蝕刻優先進行。另外,伴隨蝕刻的進行,虛置圖案161U自金屬板10分離。作為該半蝕刻的結果,在開口部161T的下方中,與虛置圖案161U的下方相比,金屬板10被更深地去除。圖7的(b)相當於沿圖7的(a)中的VIIb-VIIb線的剖視圖。
如此,在金屬板10上形成晶片銲墊部11、引線部12、外框部151、分隔桿152、電鍍引出部153以及連結部20。
接下來,如圖8所示,去除抗蝕層161以及162。抗蝕層161以及162例如可以藉由剝離液進行剝離。如此,能夠製造引線框架100。引線框架100具有下表面100b。下表面100b包括晶片銲墊部11的另一面11b、引線部12的另一面12b、分隔桿152的另一面152b、電鍍引出部153的另一面153b以及連結部20的另一面20b。圖8的(b)相當於沿圖8的(a)中的VIIIb-VIIIb線的剖視圖。
之後,可以在引線框架100上形成鍍層31。在形成鍍層31的情況下,如圖9所示,在金屬板10的上表面形成感光性的抗蝕層163,在金屬板10的下表面形成感光性的抗蝕層164。抗蝕層163例如藉由抗蝕液的塗布以及乾燥來形成。這是由於在金屬板10的上表面存在凹凸。抗蝕層164例如可以藉由抗蝕液的塗布以及乾燥來形成,亦可以藉由抗蝕膜的黏貼來形成。作為抗蝕層163,例如,可以使用環氧樹脂或丙烯酸樹脂等的電沉積抗蝕層等。作為抗蝕層164,例如,可以使用環氧樹脂或丙烯酸樹脂等的乾膜抗蝕層、電沉積抗蝕層等。圖9的(b)相當於沿圖9的(a)中的IXb-IXb線的剖視圖。
接下來,如圖10所示,藉由進行抗蝕層163的曝光以及顯影,在抗蝕層163處形成開口部163X。開口部163X是用於形成鍍層31的開口部,引線部12的一個面12a自開口部163X露出。圖10的(b)相當於沿圖10的(a)中的Xb-Xb線的剖視圖。
接下來,如圖11所示,在自開口部163X露出的引線部12的一個面12a上形成鍍層31。鍍層31例如可以藉由將金屬板10設定為供電路徑的電解電鍍法形成。圖11的(b)相當於沿圖11的(a)中的XIb-XIb線的剖視圖。
接下來,如圖12所示,去除抗蝕層163以及164。抗蝕層163以及164例如可以藉由剝離液進行剝離。圖12的(b)相當於沿圖12的(a)中的XIIb-XIIb線的剖視圖。
如此,能夠完成具有鍍層31的引線框架100。
[半導體裝置的製造方法]
接下來,對於使用了第一實施方式的引線框架100的半導體裝置的製造方法進行說明。圖14~圖16是示出使用了第一實施方式的引線框架100的半導體裝置的製造方法的剖視圖。
首先,如圖14的(a)所示,準備第一實施方式的引線框架100,於晶片銲墊部11的一個面11a之上搭載半導體元件40。半導體元件40在上表面具有電極41。此時,藉由接著劑50將晶片銲墊部11的一個面11a與半導體元件40的下表面接合。作為接著劑50,使用管芯黏合膜、Ag糊料等。
接下來,如圖14的(b)所示,使用接合線60將鍍層31和電極41電連接。
接下來,如圖14的(c)所示,藉由密封樹脂70將半導體元件40以及接合線60密封。此時,引線框架100的上表面亦被密封樹脂70密封。另一方面,引線框架的下表面100b自密封樹脂70露出。作為密封樹脂70,例如,可以使用在環氧樹脂中含有填充物的所謂塑模樹脂等。密封樹脂70例如藉由傳遞模塑法或壓縮模塑法等形成。
接下來,如圖15的(a)所示,自下表面100b側進行引線框架100的回蝕,去除連結部20。其結果,晶片銲墊部11與引線部12之間的直接的連接被去除。另外,引線部12藉由與該引線部12直接相連的電鍍引出部153與分隔桿152電連接,但是在複數個引線部12之間,僅藉由分隔桿152彼此電連接。晶片銲墊部11藉由與該晶片銲墊部11直接相連的電鍍引出部153與分隔桿152電連接,但是在各引線部12之間,僅藉由分隔桿152彼此電連接。另外,引線框架100的厚度變小,引線框架100的下表面100b向上表面側移動。其結果,密封樹脂70的一部分自引線框架100的下表面100b向下側突出。作為引線框架100的回蝕,例如可以進行濕式蝕刻。
接下來,如圖15的(b)所示,去除密封樹脂70的比引線框架100的下表面100b向下側突出的部分,使密封樹脂70的下表面70b與引線框架100的下表面100b齊平。密封樹脂70的去除例如可以藉由磨削或噴砂來進行。
接下來,如圖15的(c)所示,在晶片銲墊部11的另一面11b、引線部12的另一面12b、分隔桿152的另一面152b以及電鍍引出部153的另一面153b(參照圖3的(b))形成鍍層32。鍍層32例如可以藉由將分隔桿152以及電鍍引出部153作為供電路徑的電解電鍍法來形成。作為鍍層32,例如,形成焊料鍍層或錫鍍層。
接下來,如圖16的(a)所示,例如藉由使用了切片工具的旋轉刀刃80的切割等去除相鄰的單片化區域101之間的區域。其結果,分隔桿152被去除。另外,伴隨分隔桿152的去除,複數個引線部12彼此被電絕緣,並且晶片銲墊部11自各引線部12被電絕緣。
如此,能夠製造半導體裝置110。
如圖16的(b)所示,半導體裝置110具有晶片銲墊部11、引線部12、包括電極41的半導體元件40、接合線60、以及密封樹脂70。半導體元件40搭載於晶片銲墊部11。接合線60將引線部12和電極41連接。密封樹脂70將半導體元件40以及接合線60密封。另外,密封樹脂70具有與引線框架100的下表面100b齊平的下表面70b。晶片銲墊部11的側面以及引線部12的側面包括以越接近引線框架100的下表面100b晶片銲墊部11與引線部12之間的距離越小的方式自與下表面100b垂直的面傾斜的部分。另外, 晶片銲墊部11和引線部12的上表面和側面被密封樹脂70覆蓋。
在本實施方式中,引線框架100可以在具有連結部20的狀態下進行半導體元件40的搭載以及密封樹脂70的形成。因此,能夠抑制半導體元件40的搭載以及密封樹脂70的形成時的引線框架100的變形。另外,在半導體元件40的搭載以及密封樹脂70的形成後,藉由自下表面100b側對引線框架100進行回蝕,能夠去除連結部20,使晶片銲墊部11與引線部12電絕緣。另外,藉由該回蝕,能夠使半導體裝置110薄型化。
需要說明的是,可以替代引線框架100的回蝕,藉由自下表面100b側對引線框架100進行磨削而去除連結部20。在該情況下,在引線框架100的磨削時,密封樹脂70的一部分亦被磨削,密封樹脂70的下表面70b與引線框架100的下表面100b齊平。
另外,為了晶片銲墊部11的厚度的調整,可以進行晶片銲墊部11的半蝕刻。
(第二實施方式)
接下來,對於第二實施方式進行說明。第二實施方式主要在分隔桿的構成這點與第一實施方式不同。
[引線框架的構造]
對於第二實施方式的引線框架的構造進行說明。圖17是將第二實施方式的引線框架的一部分放大示出的俯視圖。圖18是示出第二實施方式的引線框架的剖視圖。圖18的(a)相當於沿圖17中的XVIIIa-XVIIIa線的剖視圖。圖18的(b)相當於沿圖17中的XVIIIb-XVIIIb線的剖視圖。
在第二實施方式的引線框架200中,分隔桿152的一個面152a以及電鍍引出部153的一個面153a與引線部12的一個面12a齊平。
晶片銲墊部11的另一面11b、引線部12的另一面12b、分隔桿152的另一面152b、電鍍引出部153的另一面153b以及連結部20的另一面20b包含於引線框架200的下表面200b。
其他構成與第一實施方式相同。
[引線框架的製造方法]
接下來,對於第二實施方式的引線框架200的製造方法進行說明。圖19~圖20是示出第二實施方式的引線框架的製造方法的圖。圖19的(a)~圖20的(a)是俯視圖,圖19的(b)~圖20的(b)是剖視圖。圖19~圖20示出了一個單片化區域101。
首先,與第一實施方式相同,進行直至抗蝕層161以及162的形成為止的處理(參照圖4~圖5)。接下來,如圖19所示,藉由進行抗蝕層161的曝光以及顯影,在抗蝕層161中形成被覆圖案161S、開口部161T以及虛置圖案161U。被覆圖案161S是用於在金屬板10中形成引線部12、外框部151、分隔桿152以及電鍍引出部153的部分。開口部161T是用於在金屬板10中形成連結部20的部分。虛置圖案161U是用於在金屬板10中形成晶片銲墊部11的圖案。圖19的(b)相當於沿圖19的(a)中的XIXb-XIXb線的剖視圖。
接下來,如圖20所示,將抗蝕層161以及162作為蝕刻掩模而自金屬板10的上表面側進行金屬板10的半蝕刻(例如,濕式蝕刻)。半蝕刻可以與第一實施方式相同地進行。作為該半蝕刻的結果,在開口部161T的下方,與虛置圖案161U的下方相比,金屬板10更深地被去除。圖20的(b)相當於沿圖20的(a)中的XXb-XXb線的剖視圖。
如此,在金屬板10中形成晶片銲墊部11、引線部12、外框部151、分隔桿152、電鍍引出部153以及連結部20。
之後,與第一實施方式相同,進行抗蝕層161以及162的去除軸的處理(參照圖8~圖12)。
如此,可以製造引線框架200。
根據第二實施方式亦可以獲得與第一實施方式相同的效果。即,在半導體裝置的製造過程中,能夠抑制半導體元件40的搭載以及密封樹脂70的形成時的引線框架200的變形。另外,在半導體元件40的搭載以及密封樹脂70的形成後,藉由自下表面200b側對引線框架200進行回蝕,能夠使晶片銲墊部11與引線部12電絕緣。另外,藉由該回蝕,能夠使半導體裝置110薄型化。
以上,雖然對於優選的實施方式等進行了詳細說明,但是不限於上述實施方式等,在不超出申請專利範圍中記載的範圍的情況下,能夠對上述實施方式等施加各種變形以及置換。
11:晶片銲墊部
12:引線部
20:連結部
21:第一區域
22:第二區域
31,32:鍍層
40:半導體元件
60:接合線
70:密封樹脂
70b:下表面
100,200:引線框架
100b,200b:下表面
110:半導體裝置
圖1係示出第一實施方式的引線框架的概要的圖。
圖2係將圖1中的一部分放大示出的俯視圖。
圖3係示出第一實施方式的引線框架的剖視圖。
圖4係示出第一實施方式的引線框架的製造方法的圖(其1)。
圖5係示出第一實施方式的引線框架的製造方法的圖(其2)。
圖6係示出第一實施方式的引線框架的製造方法的圖(其3)。
圖7係示出第一實施方式的引線框架的製造方法的圖(其4)。
圖8係示出第一實施方式的引線框架的製造方法的圖(其5)。
圖9係示出第一實施方式的引線框架的製造方法的圖(其6)。
圖10係示出第一實施方式的引線框架的製造方法的圖(其7)。
圖11係示出第一實施方式的引線框架的製造方法的圖(其8)。
圖12係示出第一實施方式的引線框架的製造方法的圖(其9)。
圖13係示出虛置圖案的一個例子的俯視圖。
圖14係示出使用了第一實施方式的引線框架的半導體裝置的製造方法的剖視圖(其1)。
圖15係示出使用了第一實施方式的引線框架的半導體裝置的製造方法的剖視圖(其2)。
圖16係示出使用了第一實施方式的引線框架的半導體裝置的製造方法的剖視圖(其3)。
圖17係將第二實施方式的引線框架的一部分放大示出的俯視圖。
圖18係示出第二實施方式的引線框架的剖視圖。
圖19係示出第二實施方式的引線框架的製造方法的圖(其1)。
圖20係示出第二實施方式的引線框架的製造方法的圖(其2)。
10:金屬板
11:晶片銲墊部
11a:一個面
11b:另一面
12:引線部
12a:一個面
12b:另一面
20:連結部
20a:一個面
20b:另一面
21:第一區域
22:第二區域
31:鍍層
100:引線框架
100b:下表面
152:分隔桿
152a:一個面
152b:另一面
153:電鍍引出部
153a:一個面
153b:另一面
Claims (12)
- 一種引線框架,具有: 晶片銲墊部,其具有第一面和與該第一面相反側的第二面; 引線部,其具有與該第一面齊平的第三面、以及與該第三面相反側的第四面; 連結部,其連接該晶片銲墊部和該引線部, 該連結部在俯視下具有在該晶片銲墊部和該引線部之間包圍該晶片銲墊部的第一區域, 該第一區域具有與該第一面及該第三面齊平的第五面、以及與該第五面相反側的第六面, 該第二面位於比該第四面靠該第一面、該第三面以及該第五面側, 該第六面位於比該第二面靠該第一面、該第三面以及該第五面側。
- 如請求項1之引線框架,其中, 具有複數個該引線部, 該連結部具有在俯視下位於相鄰的兩個該引線部之間的第二區域, 該第二區域具有與該第一面和該第三面齊平的第七面、以及與該第七面相反側的第八面, 該第八面位於比該第二面靠該第一面、該第三面以及該第五面側。
- 如請求項1或2之引線框架,其中, 具有設於該第四面的鍍層。
- 一種引線框架的製造方法,具有: 於金屬板的一個面設置第一抗蝕層,於另一面設置第二抗蝕層的工序; 使該第一抗蝕層圖案化,從而於該第一抗蝕層中形成被覆圖案、開口部以及虛置圖案的工序;以及 藉由該第一抗蝕層自該一個面側對該金屬板進行半蝕刻,於該虛置圖案的該另一面側形成晶片銲墊部,於該被覆圖案的該另一面側形成引線部,於該開口部的該另一面側形成連結部的工序, 該晶片銲墊部具有第一面和與該第一面相反側的第二面, 該引線部具有與該第一面齊平的第三面、以及與該第三面相反側的第四面, 該連結部連接該晶片銲墊部和該引線部, 該連結部在俯視下具有在該晶片銲墊部和該引線部之間包圍該晶片銲墊部的第一區域, 該第一區域具有與該第一面和該第三面齊平的第五面、以及與該第五面相反側的第六面, 該第二面位於比該第四面靠該第一面、該第三面以及該第五面側, 該第六面位於比該第二面靠該第一面、該第三面以及該第五面側。
- 如請求項4之引線框架的製造方法,其中, 形成複數個該引線部, 該連結部具有在俯視下位於相鄰的兩個該引線部之間的第二區域, 該第二區域具有與該第一面和該第三面齊平的第七面、以及與該第七面相反側的第八面, 該第八面位於比該第二面靠該第一面、該第三面以及該第五面側。
- 如請求項4或5之引線框架的製造方法,其中, 具有於該第四面上形成鍍層的工序。
- 一種半導體裝置,具有: 晶片銲墊部,其具有第一面和與該第一面相反側的第二面; 引線部,其具有與該第一面齊平的第三面、以及與該第三面相反側的第四面; 半導體元件,其搭載於該晶片銲墊部,並且包括電極; 接合線,其將該引線部和該電極連接;以及 密封樹脂,其將該半導體元件以及該接合線密封,並且具有與該第一面以及該第三面齊平的第九面, 該第二面位於比該第四面靠該第一面以及該第三面側, 該晶片銲墊部的側面以及該引線部的側面包括以越接近該第一面及該第三面則該晶片銲墊部與該引線部之間的距離越小的方式,自與該第一面以及該第三面垂直的面傾斜的部分。
- 一種半導體裝置的製造方法,具有: 準備請求項1至3中任一項之引線框架,並且於該晶片銲墊部上搭載包括電極的半導體元件的工序; 藉由接合線將該引線部和該電極連接的工序; 使該第一面、該第三面以及該第五面露出,並且藉由密封樹脂將該半導體元件以及接合線密封的工序;以及 去除該連結部的工序。
- 如請求項8之半導體裝置的製造方法,其中, 該去除連結部的工序具有自該第一面、該第三面以及該第五面側對該引線框架進行蝕刻的工序。
- 如請求項8或9之半導體裝置的製造方法,其中, 在該去除連結部的工序之後,具有去除自該密封樹脂的該第一面以及該第三面突出的部分的工序。
- 如請求項8之半導體裝置的製造方法,其中, 該去除連結部的工序具有自該第一面、該第三面以及該第五面側對該引線框架以及該密封樹脂進行磨削的工序。
- 如請求項8至11中任一項之半導體裝置的製造方法,其中, 在該去除連結部的工序之後,具有於該第一面以及該第三面上形成第二鍍層的工序。
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