TW202320247A - 用於支援更高連接密度的多晶粒（多－晶粒）積體電路（ｉｃ）封裝和相關製造方法 - Google Patents

用於支援更高連接密度的多晶粒（多－晶粒）積體電路（ｉｃ）封裝和相關製造方法 Download PDF

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Publication number
TW202320247A
TW202320247A TW111131260A TW111131260A TW202320247A TW 202320247 A TW202320247 A TW 202320247A TW 111131260 A TW111131260 A TW 111131260A TW 111131260 A TW111131260 A TW 111131260A TW 202320247 A TW202320247 A TW 202320247A
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Taiwan
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die
package
substrate
interconnects
vertical
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TW111131260A
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English (en)
Chinese (zh)
Inventor
達科 波波維克
卓達米 里斯克
佑 李
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美商高通公司
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Publication of TW202320247A publication Critical patent/TW202320247A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07202—Connecting or disconnecting of bump connectors using auxiliary members
    • H10W72/07204—Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
    • H10W72/07207—Temporary substrates, e.g. removable substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/288—Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Lead Frames For Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW111131260A 2021-09-24 2022-08-19 用於支援更高連接密度的多晶粒（多－晶粒）積體電路（ｉｃ）封裝和相關製造方法 TW202320247A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/484,475 2021-09-24
US17/484,475 US12062648B2 (en) 2021-09-24 2021-09-24 Multiple (multi-) die integrated circuit (IC) packages for supporting higher connection density, and related fabrication methods

Publications (1)

Publication Number Publication Date
TW202320247A true TW202320247A (zh) 2023-05-16

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TW111131260A TW202320247A (zh) 2021-09-24 2022-08-19 用於支援更高連接密度的多晶粒（多－晶粒）積體電路（ｉｃ）封裝和相關製造方法

Country Status (7)

Country Link
US (1) US12062648B2 (enExample)
EP (1) EP4406024A1 (enExample)
JP (1) JP2024534530A (enExample)
KR (1) KR20240069727A (enExample)
CN (1) CN117957654A (enExample)
TW (1) TW202320247A (enExample)
WO (1) WO2023049589A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230268319A1 (en) * 2021-10-14 2023-08-24 Advanced Micro Devices, Inc. Stacking semiconductor devices by bonding front surfaces of different dies to each other
US12463156B2 (en) * 2021-11-10 2025-11-04 Intel Corporation Packaging architectures for sub-terahertz radio frequency devices
US11791320B2 (en) * 2021-11-22 2023-10-17 Qualcomm Incorporated Integrated circuit (IC) packages employing a package substrate with a double side embedded trace substrate (ETS), and related fabrication methods
US12436467B2 (en) * 2021-12-23 2025-10-07 Intel Corporation Simulating die rotation to minimize area overhead of reticle stitching for stacked dies
TWI875390B (zh) * 2023-12-20 2025-03-01 力成科技股份有限公司 堆疊式封裝結構

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* Cited by examiner, † Cited by third party
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KR101624973B1 (ko) 2009-09-23 2016-05-30 삼성전자주식회사 패키지 온 패키지 타입의 반도체 패키지 및 그 제조방법
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
CN104064551B (zh) 2014-06-05 2018-01-16 华为技术有限公司 一种芯片堆叠封装结构和电子设备
KR101736461B1 (ko) 2014-07-07 2017-05-16 인텔 아이피 코포레이션 패키지-온-패키지 적층형 초소형전자 구조물
US10453785B2 (en) * 2014-08-07 2019-10-22 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming double-sided fan-out wafer level package

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EP4406024A1 (en) 2024-07-31
US20230102167A1 (en) 2023-03-30
US12062648B2 (en) 2024-08-13
KR20240069727A (ko) 2024-05-20
JP2024534530A (ja) 2024-09-20
WO2023049589A1 (en) 2023-03-30
CN117957654A (zh) 2024-04-30

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