KR20240069727A - 더 높은 연결 밀도를 지원하기 위한 멀티-다이 집적 회로 패키지들 및 관련 제조 방법들 - Google Patents

더 높은 연결 밀도를 지원하기 위한 멀티-다이 집적 회로 패키지들 및 관련 제조 방법들 Download PDF

Info

Publication number
KR20240069727A
KR20240069727A KR1020247009118A KR20247009118A KR20240069727A KR 20240069727 A KR20240069727 A KR 20240069727A KR 1020247009118 A KR1020247009118 A KR 1020247009118A KR 20247009118 A KR20247009118 A KR 20247009118A KR 20240069727 A KR20240069727 A KR 20240069727A
Authority
KR
South Korea
Prior art keywords
die
package
substrate
vertical
interconnections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247009118A
Other languages
English (en)
Korean (ko)
Inventor
다르코 포포비치
듀로다미 리스크
위에 리
Original Assignee
퀄컴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20240069727A publication Critical patent/KR20240069727A/ko
Pending legal-status Critical Current

Links

Classifications

    • H01L25/105
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H01L23/49816
    • H01L24/16
    • H01L24/19
    • H01L25/50
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H01L2224/12105
    • H01L2224/16225
    • H01L2224/16227
    • H01L2224/81005
    • H01L2225/1023
    • H01L2225/1035
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07202Connecting or disconnecting of bump connectors using auxiliary members
    • H10W72/07204Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
    • H10W72/07207Temporary substrates, e.g. removable substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/288Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020247009118A 2021-09-24 2022-08-24 더 높은 연결 밀도를 지원하기 위한 멀티-다이 집적 회로 패키지들 및 관련 제조 방법들 Pending KR20240069727A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/484,475 2021-09-24
US17/484,475 US12062648B2 (en) 2021-09-24 2021-09-24 Multiple (multi-) die integrated circuit (IC) packages for supporting higher connection density, and related fabrication methods
PCT/US2022/075390 WO2023049589A1 (en) 2021-09-24 2022-08-24 Multi-die integrated circuit packages for supporting higher connection density, and related fabrication methods

Publications (1)

Publication Number Publication Date
KR20240069727A true KR20240069727A (ko) 2024-05-20

Family

ID=83318886

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247009118A Pending KR20240069727A (ko) 2021-09-24 2022-08-24 더 높은 연결 밀도를 지원하기 위한 멀티-다이 집적 회로 패키지들 및 관련 제조 방법들

Country Status (7)

Country Link
US (1) US12062648B2 (enExample)
EP (1) EP4406024A1 (enExample)
JP (1) JP2024534530A (enExample)
KR (1) KR20240069727A (enExample)
CN (1) CN117957654A (enExample)
TW (1) TW202320247A (enExample)
WO (1) WO2023049589A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230268319A1 (en) * 2021-10-14 2023-08-24 Advanced Micro Devices, Inc. Stacking semiconductor devices by bonding front surfaces of different dies to each other
US12463156B2 (en) * 2021-11-10 2025-11-04 Intel Corporation Packaging architectures for sub-terahertz radio frequency devices
US11791320B2 (en) * 2021-11-22 2023-10-17 Qualcomm Incorporated Integrated circuit (IC) packages employing a package substrate with a double side embedded trace substrate (ETS), and related fabrication methods
US12436467B2 (en) * 2021-12-23 2025-10-07 Intel Corporation Simulating die rotation to minimize area overhead of reticle stitching for stacked dies
TWI875390B (zh) * 2023-12-20 2025-03-01 力成科技股份有限公司 堆疊式封裝結構

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101624973B1 (ko) 2009-09-23 2016-05-30 삼성전자주식회사 패키지 온 패키지 타입의 반도체 패키지 및 그 제조방법
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
CN104064551B (zh) 2014-06-05 2018-01-16 华为技术有限公司 一种芯片堆叠封装结构和电子设备
KR101736461B1 (ko) 2014-07-07 2017-05-16 인텔 아이피 코포레이션 패키지-온-패키지 적층형 초소형전자 구조물
US10453785B2 (en) * 2014-08-07 2019-10-22 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming double-sided fan-out wafer level package

Also Published As

Publication number Publication date
EP4406024A1 (en) 2024-07-31
US20230102167A1 (en) 2023-03-30
US12062648B2 (en) 2024-08-13
JP2024534530A (ja) 2024-09-20
WO2023049589A1 (en) 2023-03-30
CN117957654A (zh) 2024-04-30
TW202320247A (zh) 2023-05-16

Similar Documents

Publication Publication Date Title
KR20240069727A (ko) 더 높은 연결 밀도를 지원하기 위한 멀티-다이 집적 회로 패키지들 및 관련 제조 방법들
TW202209505A (zh) 將基板側壁部分遮罩件用於電磁干擾(emi)遮罩的射頻(rf)積體電路(ic)(rfic)封裝及相關製造方法
US11791320B2 (en) Integrated circuit (IC) packages employing a package substrate with a double side embedded trace substrate (ETS), and related fabrication methods
US12255381B2 (en) Antenna modules employing three-dimensional (3D) build-up on mold package to support efficient integration of radio-frequency (RF) circuitry, and related fabrication methods
US20230317677A1 (en) Three-dimensional (3d) integrated circuit (ic) (3dic) package employing a redistribution layer (rdl) interposer facilitating semiconductor die stacking, and related fabrication methods
TW202335240A (zh) 採用轉用晶種層形成至後端製程(beol)結構的額外信號路徑的半導體晶粒、以及相關積體電路(ic)封裝和製造方法
US20230114404A1 (en) Embedded trace substrate (ets) with embedded metal traces having multiple thickness for integrated circuit (ic) package height control
TW202412247A (zh) 採用具有對準的外部互連的電容器中介層基板的積體電路(ic)封裝以及相關製造方法
US12525574B2 (en) Three-dimensional (3D) integrated circuit (IC) (3DIC) package with a bottom die layer employing an extended interposer substrate, and related fabrication methods
US20230307336A1 (en) Package substrates employing pad metallization layer for increased signal routing capacity, and related integrated circuit (ic) packages and fabrication methods
KR20250047977A (ko) 바이패스 금속 트레이스 신호 라우팅을 이용한 딥 트렌치 커패시터(dtc)들, 및 관련 집적 회로(ic) 패키지들 및 제조 방법들
CN118056277A (zh) 采用耦合到管芯侧嵌入式迹线基板(ets)层中的嵌入式金属迹线的补充金属层的集成电路(ic)封装以及相关的制造方法
US20240282729A1 (en) Package dies including vertical interconnects for signal and power distribution in a three-dimensional (3d) integrated circuit (ic) package
TWI914389B (zh) 用於改進連通性的具有重構晶粒中介體的積體電路(ic)及相關製造方法
US12610869B2 (en) Integrated circuit (IC) package employing a metal block with metal interconnects thermally coupling a die to an interposer substrate for dissipating thermal energy of the die, and related fabrication methods
US20240250009A1 (en) EMBEDDED TRACE SUBSTRATES (ETSs) WITH T-SHAPED INTERCONNECTS WITH REDUCED-WIDTH EMBEDDED METAL TRACES, AND RELATED INTEGRATED CIRCUIT (IC) PACKAGES AND FABRICATION METHODS
US20250079337A1 (en) Integrated circuits with two-side metallization and external stiffening layer and related fabrication methods
TW202312416A (zh) 在封裝基板中的(諸)金屬結構中具有空隙定義區段以減小晶粒-基板機械應力的半導體晶粒模組封裝以及相關方法
CN117999649A (zh) 具有用于集成电路(ic)封装高度控制的具有多种厚度的嵌入式金属迹线的嵌入式迹线基板(ets)
EP4214754A1 (en) Integrated circuit (ic) with reconstituted die interposer for improved connectivity, and related methods of fabrication

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000