TW202316588A - 基板載體以及包括其之基板組合 - Google Patents
基板載體以及包括其之基板組合 Download PDFInfo
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Abstract
實例提供一種基板載體及包括其的基板組裝體,其中,基板載體包括:容納空間;設置於所述容納空間的外部的引導部;設置於所述容納空間和引導部的下方的支撐部,所述引導部在從上方觀察時周邊包括圓或圓弧。當使用基板載體通過包括矩形陶瓷基板(例如,玻璃)的目標基板來適用於封裝工序時,可使材料和成本損失最小化並提高生產率。
Description
實例涉及基板載體及包括其的基板組裝體。
最近,正在研究應用玻璃等陶瓷材料作為高端封裝基板,並排除有機材料。可以通過在基板上形成通孔並在通孔上應用導電材料,來縮短器件與印刷電路基板之間的佈線長度,並且可以獲得優異的電特性。
這種基板可以用於製造可包括多個用於封裝基板的單元的陣列基板,並且所述陣列基板通常被製造為矩形面板類型。消化精細而複雜的設計,需要利用高精度的半導體工序,但在能夠加工所述矩形的陣列基板的半導體工序設備級別上商業化設備缺乏,開發/維護期間和成本相當可觀。
為了將該矩形陣列基板應用於現有的矽類半導體晶片設備,優選具有與晶片相似的圓形周邊。然而,在目前構造的矩形陣列基板尺寸的情況下,當加工成12英寸等晶片形式時,會出現相當面積的損失,從而導致生產率下降,不適合大規模生產。
因此,有必要考慮各種因素和配置方法,以能夠最大限度地減少材料和成本損失並提高現有矩形基板的封裝工序的生產率。
上述背景技術是發明人為了推導實例而擁有的或在推導過程中獲得的技術資訊,不一定是在本發明提交申請之前向公眾公開的已知技術。
現有技術文獻
專利文獻
專利文獻1:韓國公開專利第10-2021-7015658中公開的“半導體封裝玻璃基板、半導體封裝基板及半導體裝置”
專利文獻2:韓國授權專利第10-2082271中公開的“載體基板分離系統及分離方法”
實例的目的在於提供一種基板載體和基板組裝體,該基板載體可使材料和成本損失最小化,並且即使使用矩形等基板也能夠應用基於現有晶片的設備,從而可提高封裝工序生產率。
實例的另一目的在於,提供一種通過所述基板載體將包括矩形陶瓷(例如,玻璃)的目標基板應用於現有圓形晶片工序的方法。
為了實現上述的目的,根據實例的基板載體,可包括:用於容納基板的容納空間;設置於所述容納空間的外部的引導部;以及支撐部及固定部中至少一種,所述支撐部可用於支撐所述引導部和容納在所述容納空間中的基板,並設置於所述容納空間和引導部的下方,所述固定部可設置於所述引導部的內周面,用於將所述基板固定於所述引導部上,所述引導部可在從上方觀察時周邊包括圓或圓弧。
在一實例中,所述引導部的周邊直徑可以為4英寸以上。
在一實例中,所述引導部的厚度可以為100μm至2000μm。
在一實例中,所述容納空間的高度可低於所述引導部的高度,所述支撐部可暴露。
在一實例中,所述支撐部的厚度可以為50μm至200μm。
在一實例中,所述支撐部可包括紫外線固化型黏合層。
為了實現上述的目的,根據實例的基板組裝體包括如上所述的基板載體;以及設置於所述容納空間中的目標基板。
所述目標基板可以為選自由矽類陶瓷基板、玻璃類陶瓷基板、玻璃基板或它們的組合的基板。
所述目標基板可以為玻璃基板。
在一實例中,所述目標基板可包括形成有多個用於封裝基板的單元的陣列。
在一實例中,所述目標基板可與所述引導部具有0.5mm至20mm的間隙。
在一實例中,在所述間隙中至少一部分可由填充材料填充。
為了實現上述的目的,根據實例的目標基板加工方法可包括:在根據上述的基板組裝體的目標基板的一個表面上形成第一鍍層的步驟;在所述第一鍍層上形成抗蝕圖案,在所述抗蝕圖案以外的部分形成第二鍍層的步驟;以及在所述第二鍍層上形成焊料,並除去所述抗蝕圖案和所述抗蝕圖案的下方的第一鍍層的步驟。
在一實例中,在所述目標基板的一個表面上可包括導電焊盤和鈍化層,所述第一鍍層可形成在所述導電焊盤和鈍化層上。
為了實現所述目的,根據一實例的目標基板的固定方法包括:準備步驟,用於準備基板載體和目標基板;以及組裝體形成步驟,通過所述基板載體的支撐部或固定部將所述目標基板相互固定以獲得一體成型的基板組裝體,所述基板載體包括用於容納目標基板的容納空間和圍繞所述容納空間以具有圓盤狀外形的引導部,所述基板組裝體包括設置於所述容納空間中的目標基板以及通過支撐部或固定部中至少一種固定的基板載體。
所述支撐部可包括紫外線固化型黏合層。
所述固定部通過與所述目標基板及所述引導部的至少一部分相接觸以固定它們,所述目標基板與所述引導部之間的間隙可以為0.5mm至20mm。
所述引導部可以為選自由預浸布(Prepreg)、矽類陶瓷基板、玻璃類陶瓷基板、玻璃基板或它們的組合的基板。
所述目標基板可以為選自由玻璃類陶瓷基板、玻璃基板或它們的組合的基板。
為了實現所述目的,根據一實例的目標基板的分離方法包括:準備步驟,用於準備基板組裝體;以及處理步驟,向所述基板組裝體施加紫外線或熱以準備使所述基板組裝體中包括的支撐部或固定部的黏合力降低的基板組裝體。
所述分離方法還可包括分離步驟,通過向黏合力降低的所述基板組裝體的引導部和所述目標基板施加相反方向的上下方向的力以將所述目標基板從所述基板組裝體分離。
所述引導部可以為紫外線透射性引導部。在所述處理步驟中,所述紫外線穿過所述紫外線透射性引導部傳遞至所述固定部或所述支撐部。
根據實例,當使用基板載體通過包括矩形陶瓷基板(例如,玻璃)的目標基板來適用於封裝工序時, 可使材料和成本損失最小化並提高生產率。
在下文中,將參考附圖詳細描述一個以上的實例,以便本發明所屬技術領域的普通技術人員能夠容易實施。然而,實例可以以幾種不同的形式來實施且不限於本文描述的實施例。在說明書全文中,相似的附圖標記標注給相似的部分。
在本文中,除非另有說明,當描述一個結構“包括”另一個結構時,除非有特別相反的記載,否則是指可以進一步包括其他結構,而不是排除其他結構。
在本文中,當一個結構與另一個結構相“連接”時,它不僅包括“直接連接”的情況,還包括“其中間介入另一個結構來進行連接”的情況。
在本文中,B位於A上的含義是指B以直接與A相接觸的方式位於A上或B位於A上而另一層位於它們之間,不應侷限解釋為B以與A的表面相接觸的方式位於A上。
在本文中,包含在馬庫西形式的表達中的術語“它們的組合”是指選自由馬庫西形式的表達中描述的構成要素組成的組中的一種以上的混合或組合,並且是指包括選自由所述構成要素組成的組中的一種以上。
在本文中,“A和/或B”的描述是指“A、B、或、A及B”。
在本文中,除非另有說明,否則使用諸如“第一”、“第二”或“A”、“B” 之類的術語來區分相同的術語。
在本文中,除非另有說明,否則表述單數被解釋為包括在上下文中解釋的單數或複數的含義。
基板載體10
為了實現上述的目的,根據實例的基板載體10包括:用於容納基板的容納空間12;設置於所述容納空間的外部的引導部11;以及支撐部13、固定部14中至少一種。
所述支撐部可用於支撐所述引導部和容納在所述容納空間中的基板,並且可設置於所述容納空間和引導部的下方。
所述固定部可設置於所述引導部的內周面,以用於固定所述基板和所述引導部。
在從上方觀察時的俯視圖的觀點,所述引導部的周邊可包括圓或圓弧。
優選地,使所述引導部11具有類似於晶片的圓形周邊。此時,引導部的最外周周邊直徑可以約為3英寸以上,可以約為6英寸以上,可以約為20英寸以下,可以約為18英寸以下。通過具有這種直徑,當目標基板20被放置於所述容納空間12中時,所述目標基板可容易地應用於用於半導體晶片級封裝(WLP)工藝的機器。
所述引導部11的厚度可以為約100μm至約2000μm,可以為約100μm至約1000μm。使與將被安裝在所述容納空間12中的目標基板之間的厚度及高度差最小化且具有相似的厚度,這可以有利於後續的封裝工序,並且可使缺陷的發生最小化。
所述引導部11可以具有通過在其周邊的一部分切除圓弧的一部分以形成為直線形的平坦區域(未示出)等。
所述引導部11可以在周邊的一部分沿中心方向形成具有凹槽的槽口(未示出)等。
所述引導部11可以包括金屬、陶瓷、塑膠、玻璃等,並且可以使用在封裝工序中幾乎不產生雜質或顆粒的材料。示例性地,可以將選自由預浸布、矽類陶瓷基板、玻璃類陶瓷基板、玻璃基板或它們的組合的基板應用於所述引導部。具體而言,所述基板整體呈圓盤狀,內部具有容納空間。所述引導部可以一體地形成,或者能夠以兩個以上的切碎整體形成引導部的方式來形成。
所述引導部11可應用紫外線透射性材料。示例性地,可應用紫外線透射性塑膠板、紫外線透射性平板玻璃等。當所述引導部應用紫外線透射性材料時,可進一步提供可加工性。示例性地,當通過應用其黏合力因紫外線照射而減弱的支撐部來製造所述基板組裝體並除去支撐部時,可提高紫外線照射和支撐部除去的可加工性。
所述引導部11可以在目標基板20安裝在所述容納空間12中並對目標基板進行加工處理之後被回收,回收的引導部可在基板載體的製造中多次重複使用。
參考從上方觀察所述基板載體10的俯視圖(圖1),所述容納空間12的形狀可以為至少具有四個邊的矩形以能夠容納可作為目標基板的矩形基板。並且,所述容納空間可以為矩形的四個頂點彎曲的空間。
如圖2所示,所述容納空間12可具有比所述引導部11更低的平均高度,並且可以是完全貫通或暴露所述支撐部13的空的空間。
當所述容納空間12呈如上所述的矩形時,其面積可以為約2.5×103mm
2至約2.8×105mm
2。並且,所述容納空間的一個邊的長度可以為約50mm至約520mm,可以為約75mm至約450mm。
如圖3、圖4或圖6所示,所述容納空間12可在待放置目標基板20的安裝區域和所述安裝區域的外部包括單獨緩衝區B。所述緩衝區可以是所述安裝區域與引導部11之間的一種空間、間隙,其可具有約0.1mm至約2mm的寬度,並且可具有整體均勻的寬度。所述容納空間可提供所述緩衝區以提高可加工性並可降低封裝工序的缺陷率。
所述安裝區域可以具有與所述目標基板20的外廓形狀相似的形狀。
如圖5或圖7所示,所述緩衝區B的至少一部分或全部可用固定部14進行填充。所述固定部可以是用填充材料例如環氧樹脂、聚醯亞胺樹脂、聚丙烯酸酯樹脂、矽類樹脂等填充所述緩衝區的至少一部分,並且固定所述目標基板和所述支撐部。並且,所述固定部可通過固化包括紫外線固化型丙烯酸酯化合物、丙烯酸共聚物、光引發劑、熱固劑等的組合物來形成。此時,所述固定部可以在後述的目標基板加工之後,通過紫外線照射處理等附加處理來降低接合力,並且能夠容易地從引導部11分離。
通過所述固定部14來防止目標基板20的加工工序中的斷線或缺陷,並根據需要,可使所述基板載體10與目標基板的固定或分離容易。
如圖7所示,在沒有單獨支撐部13的情況下,所述固定部14也可以與目標基板相接觸並可使目標基板固定在引導部11上。
所述固定部14還可包括填充物。所述填充物可包括選自由二氧化矽、氧化鋁、二氧化鈦、氧化鋯、矽、氧化鎂及它們的組合中的一種。
所述支撐部13用於支撐待放置在所述容納空間12中的目標基板20,並且可以在放置所述目標基板時接觸,或者可以在目標基板與支撐部之間還包括黏合層。
所述支撐部13的厚度可以為約20μm至約200μm,可以為約80μm至約180μm。通過具有如上所述的厚度,可以在目標基板20的加工工序中的切割工序之後,有效地除去所述支撐部。
所述支撐部13可包括紫外線固化型黏合層。所述支撐部可以應用支撐膜和在所述支撐膜上設置有紫外線固化型黏合層的。所述支撐部可以應用黏合膠帶形式的紫外線固化型黏合層,還可以為由紫外線固化型黏合層形成,且無需單獨部件。
示例性地,所述紫外線固化型黏合層可以通過固化包括紫外線固化型丙烯酸酯化合物、烯烴類化合物、酯類化合物、氯乙烯類化合物、丙烯酸共聚物、光引發劑、熱固劑等的組合物來形成,但不限於此。
所述支撐部13可包括其他黏合層。所述其他黏合層可包括丙烯酸低聚物、異氰酸酯類固化劑、胺類固化劑等。
並且,對於所述支撐部13,可將聚酯類薄膜、聚烯烴類薄膜、聚氯乙烯類薄膜、聚乙烯類薄膜等應用為所述支撐膜。
所述紫外線黏合層和其他黏合層的厚度可以約為10μm至180μm,並且可以不受限制地使用,只要目標基板的黏合和支撐容易即可。
所述紫外線黏合層和其他黏合層與所述目標基板20之間的黏合力可以為約300gf/25mm至約3500gf/25mm,可以為約1000gf/25mm至約3500gf/25mm。通過具有這種黏合力,可在後述的目標基板加工方法中容易固定目標基板和支撐部。
當所述支撐部13包括所述紫外線黏合層和其他黏合層時,所述引導部11可由能夠充分透射紫外線的的材料製成,示例性地,可包括玻璃。
所述支撐部13可以具有對顯影劑(四甲基氫氧化銨,TMAH)等的耐受性,可以在目標基板20的加工工序中保持到切割工序之前。
在所述支撐部13中,可因紫外線照射而使黏合力降低。
所述支撐部13可以為因熱而降低黏合力的所謂的熱剝離黏合層。
所述基板載體10可以在約150℃至約200℃的溫度下具有耐熱性,並且即使在約200℃的溫度下放置約1小時之後,也基本上不會發生外觀和物理性質的變化。
通過所述基板載體10,將目標基板,特別是將由矩形玻璃製成且包括多個用於封裝基板的單元的陣列基板應用於晶片級封裝工序中,從而最大限度地減少材料和成本損失,並且可提高生產率。
基板組裝體100
為了實現上述的目的,根據實例的基板組裝體包括:如上所述的基板載體10;以及設置於所述容納空間12中的目標基板20。
所述目標基板可以為選自由矽類陶瓷基板、玻璃類陶瓷基板、玻璃基板或它們的組合的基板。
示例性地,陶瓷基板可應用矽類陶瓷基板、玻璃類陶瓷基板等。矽類陶瓷基板可以為在其部分或全部包括矽基板、碳化矽基板等的基板。玻璃類陶瓷基板可以為在其部分或全部包括石英基板、藍寶石基板等的基板。
所述目標基板可以為玻璃基板。示例性地,玻璃基板可以應用鹼硼矽平板玻璃、無鹼硼矽平板玻璃、無鹼鹼土硼矽平板玻璃等,只要是應用為電子產品的部件的平板玻璃,就可以應用。
所述目標基板20可以為設置有多個用於封裝基板的單元的陣列基板,可包括玻璃。所述目標基板中包含的玻璃可以為硼矽酸鹽玻璃、無鹼玻璃等。
所述目標基板20可以為矩形,其面積可以為約1.5×105mm
2至約4×105mm
2。並且,所述目標基板的一個邊的長度可以為約450mm至約550mm。
所述目標基板20能夠以安裝在所述載體基板10上的狀態應用於晶片級封裝工序中,因為當加工成商用晶片形式時會產生顯著的面積的損失。
所述容納空間12和目標基板20之間可包括緩衝區14(參考圖3至圖7)。所述緩衝區是所述目標基板與引導部11之間的一種空間、間隙,其可具有約0.1mm至約2mm的寬度,並且可具有整體均勻的寬度。所述容納空間可提供所述緩衝區,以防止所述容納空間內目標基板的雜質污染,降低封裝工序的缺陷率。
所述緩衝區B的至少一部分或全部可以用固定部14進行填充。可以包含在所述固定部中的與上述的基板載體10的描述相同,因此省略重複描述。通過所述固定部,可以防止目標基板20的加工工序中發生斷線或缺陷,便於所述基板載體10與目標基板的固定或分離。
所述目標基板20與支撐部13之間的黏合力可以為約300gf/25mm至約3500gf/25mm,可以為約1000gf/25mm至約3500gf/25mm。通過具有這種黏合力,可以在後述的目標基板加工方法中容易地固定目標基板和支撐部。
將大約400mJ/cm
2的紫外線均勻照射所述支撐部13之後,與所述目標基板20之間的黏合力可以為約5gf/25mm至約150gf/25mm。
所述基板組裝體100可應用於後述的目標基板加工方法中,也可應用於晶片級封裝(WLP)工序。
與所述基板組裝體100的基板載體10相關結構等與前述的基板載體的描述相同,因此將省略重複的描述。
基板載體的製造方法、固定方法及分離方法
為了實現上述的目的,根據實例的基板載體的製造方法可包括:準備從上方觀察時周邊包括圓或圓弧的任意部件,並形成容納空間和引導部的步驟;以及形成支撐部或固定部的步驟。
所在形成述容納空間和引導部的步驟中,可以通過將任意部件內部加工成部分貫通以形成初步容納空間,並且其餘的區域可以成為引導部。所述加工處理可通過機械蝕刻、雷射加工等來進行。
在形成所述容納空間和引導部的步驟中,可包括將所述初步容納空間的貫通部位加工成如上所述的容納空間的形狀的過程。
在形成所述支撐部的步驟中,能夠封閉所述容納空間和引導部的下方的形狀的支撐部可與所述引導部的下方進行黏合處理。或者,還可以將原料物質塗布在單獨模具上,並且使所述引導部的下方與被塗布的層相接觸之後進行固化處理。
所述固定部設置於目標基板與引導部之間以用於固定它們,具體填充材料等如上所述。
可以通過在設置有未固化或半固化的填充材料的狀態下設置所述目標基板的方式來形成所述固定部,可經由附加的固化或固定過程來形成。並且,可以通過臨時性地將所述目標基板和所述引導部佈置在支撐膜上之後形成固定部並除去支撐膜的方式來製造。
所述支撐部的物質與上述的基板載體的描述相同,因此將省略重複的描述。
為了實現所述目的,根據一實例的目標基板的固定方法包括:準備步驟,用於準備基板載體和目標基板;以及組裝體形成步驟,通過所述基板載體的支撐部或固定部將所述目標基板相互固定以獲得一體成型的基板組裝體。
所述基板載體包括用於容納目標基板的容納空間以及圍繞所述容納空間以使所述目標基板具有基本圓盤狀的外形的引導部。
所述基板組裝體包括設置於所述容納空間中的目標基板以及通過支撐部或固定部中至少一種固定的基板載體。
所述支撐部可包括紫外線固化型黏合層。
所述固定部通過與所述目標基板及所述引導部的至少一部分相接觸以固定它們,所述目標基板與所述引導部之間的間隙可以為0.5mm至20mm。
所述固定部可形成於設置於支撐部上的目標基板與引導部之間的緩衝區。基板組裝體可以為通過在形成固定部之後保持支撐部而包括支撐部和固定部的形式,並且可以為除去支撐部的引導部-固定部-目標基板的形狀。
所述引導部可以為選自由預浸布、矽類陶瓷基板、玻璃類陶瓷基板、玻璃基板或它們的組合中的基板。
所述目標基板可以為選自由玻璃類陶瓷基板、玻璃基板或它們的組合中的基板。
為了實現所述目的,根據一實例的目標基板的分離方法包括:準備步驟,用於準備基板組裝體;以及處理步驟,向所述基板組裝體施加紫外線或熱以準備使所述基板組裝體中包括的支撐部或固定部的黏合力降低的基板組裝體。
所述分離方法還可包括:分離步驟,通過向黏合力降低的所述基板組裝體的引導部和所述目標基板施加相反方向的上下方向的力以將所述目標基板從所述基板組裝體分離。
所述引導部可以為紫外線透射性引導部。在所述處理步驟中,所述紫外線穿過所述紫外線透射性引導部傳遞至所述固定部或所述支撐部。
針對所述引導部、所述目標基板、所述固定部、所述支撐部等具體描述與上述的描述重複,因此省略其描述。
目標基板加工方法
為了實現上述的目的,目標基板的加工方法可包括:在根據上述的基板組裝體的目標基板的一個表面上形成第一鍍層的步驟;在所述第一鍍層上形成抗蝕圖案,在所述抗蝕圖案以外的部分形成第二鍍層的步驟;以及在所述第二鍍層上形成焊料,並除去所述抗蝕圖案和所述抗蝕圖案的下方的第一鍍層的步驟。
所述目標基板可以包括能夠形成多個用於封裝基板的單元的陣列。
在所述目標基板的一個表面上可包括導電焊盤和鈍化層,所述第一鍍層可形成在所述導電焊盤和鈍化層上。
在形成所述第一鍍層的步驟中,第一鍍層可包含鈦、鉻、鋁、銅、鎢及它們的合金等。
所述第一鍍層可包括包含鈦的第一層、以及形成於所述第一層上且包含銅的第二層。
所述第一鍍層的形成可以通過濺射等在所述目標基板的一個表面上,或者在目標基板的一個表面的導電焊盤、鈍化層上進行。
所述抗蝕圖案的形成可以通過在所述第一鍍層上塗布光刻膠並在通過形成圖案的掩模等來曝光和顯影之後進行蝕刻以常規方法進行。
在形成所述第二鍍層的步驟中,所述第二鍍層可包含銅、鎳及它們的合金等。
所述第二鍍層的形成可通過電鍍或無電鍍等進行。
在所述第二鍍層上形成焊料時,所述焊料可以為包含鉛、錫等的焊料,也可以為包含銀、錫、鋅、鋁、鎂、鎵等的無鉛焊料。
在除去所述抗蝕圖案的下方的第一鍍層的步驟中,除去所述抗蝕圖案和其下方的第一鍍層以防止發生與其他要素之間的電短路。
在除去所述抗蝕圖案的下方的第一鍍層的步驟中,可通過蝕刻溶液以常規方法進行。所述蝕刻溶液可包括氫氟酸等。
在除去所述抗蝕圖案的下方的第一鍍層的步驟之後,可進行用於調整剩餘的鍍層以及與其相連接的要素的硬度的預定熱處理過程。
在除去所述第一鍍層的步驟之後,該方法還可包括將所述焊料加工成焊球形狀的步驟。
在除去所述第一鍍層之後,當所述目標基板包括包括多個用於封裝基板的單元的陣列時,可進行切割為單獨的用於封裝基板的單元的切割工序。並且,在所述切割工序之後,還可包括除去殘留於封裝基板單元的下方的支撐部的步驟。當所述支撐部包括紫外線固化型黏合層時,所述支撐部的除去可通過均勻照射紫外線來除去。
在除去所述支撐部的步驟之後,還可包括用於回收除去之前位於支撐部上的引導部的步驟。回收的引導部可應用於所述基板載體的製造方法中,並且可多次重複使用。
所述目標基板加工方法還可包括在所述目標基板上沉積多層金屬薄膜佈線的步驟、形成再佈線層的步驟。
儘管在上文中詳細描述本發明的優選實施例,但是本發明的範圍不限於此,並且本領域技術人員使用如以下發明要求保護範圍中定義的本發明的基本概念進行各種修改和改進也屬於本發明的發明要求保護範圍中。
10:載體基板 11:引導部
12:容納空間 13:支撐部
14:固定部 20:目標基板
B:緩衝區 100:基板組裝體
圖1是從上方觀察根據實例的基板載體的俯視圖。
圖2是根據實例的基板載體的剖視圖。
圖3是從上方觀察根據實例的基板組裝體的俯視圖。
圖4是根據實例的基板組裝體的剖視圖。
圖5是根據實例的基板組裝體的另一剖視圖。
圖6是根據實例的基板組裝體的另一剖視圖。
圖7是根據實例的基板組裝體的另一剖視圖。
10:載體基板
11:引導部
12:容納空間
Claims (11)
- 一種基板載體,包括: 用於容納基板的容納空間; 設置於所述容納空間的外部的引導部;以及 支撐部及固定部中至少一種, 所述支撐部用於支撐所述引導部和容納在所述容納空間中的基板,並設置於所述容納空間和引導部的下方, 所述固定部設置於所述引導部的內周面,用於固定所述基板和所述引導部, 所述引導部在從上方觀察時周邊包括圓或圓弧。
- 如請求項1所述的基板載體,其中所述引導部的周邊直徑約為4英寸以上。
- 如請求項1所述的基板載體,其中所述引導部的厚度約為100μm至2000μm。
- 如請求項1所述的基板載體,其中所述容納空間的高度低於所述引導部的高度。
- 如請求項1所述的基板載體,其中所述支撐部的厚度約為50μm至200μm。
- 如請求項1所述的基板載體,其中, 所述支撐部包括紫外線固化型黏合層, 所述固定部包括紫外線固化型黏合材料。
- 一種基板組裝體,包括: 如請求項1所述的基板載體;以及 設置於所述容納空間中的目標基板, 所述目標基板與所述基板載體相互固定以形成一體。
- 如請求項7所述的基板組裝體,其中所述目標基板為選自由矽類陶瓷基板、玻璃類陶瓷基板、玻璃基板或它們的組合的基板。
- 如請求項7所述的基板組裝體,其中所述目標基板包括形成有多個用於封裝基板的單元的陣列。
- 如請求項7所述的基板組裝體,其中所述目標基板與所述引導部具有約0.5mm至20mm的間隙。
- 如請求項10所述的基板組裝體,其中在所述間隙中至少一部分由填充材料填充。
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