TW202308841A - 金屬層積層板用多孔質樹脂膜及金屬層積層板 - Google Patents
金屬層積層板用多孔質樹脂膜及金屬層積層板 Download PDFInfo
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- TW202308841A TW202308841A TW111114771A TW111114771A TW202308841A TW 202308841 A TW202308841 A TW 202308841A TW 111114771 A TW111114771 A TW 111114771A TW 111114771 A TW111114771 A TW 111114771A TW 202308841 A TW202308841 A TW 202308841A
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- Prior art keywords
- metal
- resin film
- porous resin
- metal layer
- thermal expansion
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Abstract
本發明提供一種即便於高溫環境下亦能抑制配置於貫通孔之內周面之金屬層之損傷,且電性連接可靠性優異之金屬層積層板用多孔質樹脂膜及金屬層積層板。
本發明之金屬層積層板用多孔質樹脂膜1用於金屬層4之積層。金屬層積層板用多孔質樹脂膜1具有與厚度方向正交之面方向上之最小熱膨脹係數X、及厚度方向之熱膨脹係數Z。於金屬層積層板用多孔質樹脂膜1中,厚度方向之熱膨脹係數Z相對於最小熱膨脹係數X之比率(Z/X)為3.5以下。
Description
本發明係關於一種金屬層積層板用多孔質樹脂膜及金屬層積層板。
已知將聚醯亞胺多孔膜用於銅層積層板(例如參照下述專利文獻1)。銅箔積層板具備:具有貫通孔之聚醯亞胺多孔膜、積層於其厚度方向兩面之銅層、及將該等電性連接且配置於貫通孔之內周面之鍍銅部。於銅箔積層板中,銅層藉由蝕刻而形成圖案,與其他基板電性連接。
[先前技術文獻]
[專利文獻]
[專利文獻1]WO2018/186486號
[發明所欲解決之問題]
於專利文獻1之藉由回焊將由銅層構成之圖案與其他基板電性連接之情形時,鍍銅部易受到損傷。於此情形時,存在配置於聚醯亞胺多孔膜之兩面之圖案間之電性連接可靠性下降的不良情況。
本發明提供一種即便於高溫環境下亦能抑制配置於貫通孔之內周面之金屬層之損傷,電性連接可靠性優異之金屬層積層板用多孔質樹脂膜及金屬層積層板。
[解決問題之技術手段]
本發明(1)包含一種金屬層積層板用多孔質樹脂膜,其係用於金屬層之積層者,且具有與厚度方向正交之面方向上之最小熱膨脹係數X、及上述厚度方向之熱膨脹係數Z,上述厚度方向之熱膨脹係數Z相對於上述最小熱膨脹係數X之比率(Z/X)為3.5以下。
於該金屬層積層板用多孔質樹脂膜中,由於厚度方向之熱膨脹係數Z相對於最小熱膨脹係數X之比率(Z/X)較低為3.5以下,故而於高溫環境下能夠抑制配置於貫通孔之內周面之金屬層所受之應力。因此,能夠抑制上述金屬層之損傷。其結果為,能夠製造電性連接可靠性優異之金屬層積層板。
本發明(2)包含一種金屬層積層板,其具備:具有貫通上述厚度方向之貫通孔之如(1)中記載之金屬層積層板用多孔質樹脂膜;及金屬層,其配置於上述金屬層積層板用多孔質樹脂膜之厚度方向一面、另一面及上述貫通孔之內周面。
於該金屬層積層板中,金屬層之損傷得到抑制。因此,該金屬層積層板之電性連接可靠性優異。
[發明之效果]
本發明之金屬層積層板用多孔質樹脂膜及金屬層積層板即便於高溫環境下亦能抑制配置於貫通孔之內周面之金屬層之損傷,電性連接可靠性優異。
參照圖1,對本發明之金屬層積層板用多孔質樹脂膜之一實施方式進行說明。如圖1所示,金屬層積層板用多孔質樹脂膜1具有厚度,沿著與厚度方向正交之面方向延伸。金屬層積層板用多孔質樹脂膜1之厚度並無特別限定。金屬層積層板用多孔質樹脂膜1之厚度例如為2 μm以上,較佳為5 μm以上,又,例如為1,000 μm以下,較佳為500 μm以下。
<熱膨脹係數>
金屬層積層板用多孔質樹脂膜1具有面方向上之最小熱膨脹係數X、及厚度方向之熱膨脹係數Z。
最小熱膨脹係數X係面方向上之任一方向中最低之熱膨脹係數。最小熱膨脹係數X並無特別限定,只要滿足下述比率(Z/X)即可。最小熱膨脹係數X例如為30.0 ppm/K以下,較佳為25.0 ppm/K以下。最小熱膨脹係數X之下限並無特別限定。最小熱膨脹係數X之下限例如為1 ppm/K,又,為10 ppm/K。最小熱膨脹係數X之測定方法記載於下文之實施例中。
厚度方向上之熱膨脹係數Z並無特別限定,只要滿足下述比率(Z/X)即可。厚度方向上之熱膨脹係數Z例如大於上述最小熱膨脹係數X。具體而言,厚度方向上之熱膨脹係數Z例如為100 ppm/K以下,較佳為90 ppm/K以下,更佳為80 ppm/K以下,進而較佳為70 ppm/K以下,尤佳為60 ppm/K以下。只要厚度方向上之熱膨脹係數Z為上述上限以下,則能夠將下述比率(Z/X)設定為所期望之範圍,即較低之比率(Z/X)。厚度方向上之熱膨脹係數Z之下限並無特別限定。厚度方向上之熱膨脹係數Z之下限例如為1 ppm/K,又,為10 ppm/K。厚度方向上之熱膨脹係數Z之測定方法記載於下文之實施例中。
厚度方向之熱膨脹係數Z相對於最小熱膨脹係數X之比率(Z/X)為3.5以下。
若厚度方向之熱膨脹係數Z相對於最小熱膨脹係數X之比率(Z/X)超過3.5,則高溫時相對於金屬層積層板用多孔質樹脂膜1之面方向之膨脹,金屬層積層板用多孔質樹脂膜1之厚度方向之膨脹過大。因此,於在具備具有貫通孔9之金屬層積層板用多孔質樹脂膜1之金屬層積層板10之貫通孔9形成導通部5,將金屬層積層板10放置於高溫環境下時,上述導通部5產生損傷。因此,金屬層積層板10之電性連接可靠性下降。換言之,於該金屬層積層板用多孔質樹脂膜1中,由於厚度方向之熱膨脹係數Z相對於最小熱膨脹係數X之比率(Z/X)較小為3.5以下,故而能夠抑制高溫時相對於金屬層積層板用多孔質樹脂膜1之面方向之膨脹而言的金屬層積層板用多孔質樹脂膜1之厚度方向之膨脹。因此,即便將上述金屬層積層板10放置於高溫環境下,亦能抑制上述導通部5產生損傷。因此,能夠抑制金屬層積層板10之電性連接可靠性下降。
厚度方向之熱膨脹係數Z相對於最小熱膨脹係數X之比率(Z/X)較佳為3.0以下。又,厚度方向之熱膨脹係數Z相對於最小熱膨脹係數X之比率(Z/X)之下限並無特別限定。厚度方向之熱膨脹係數Z相對於最小熱膨脹係數X之比率(Z/X)之下限例如為1,又,例如為1.5,進而為2.0。
金屬層積層板用多孔質樹脂膜1為多孔質。金屬層積層板用多孔質樹脂膜1具有獨立氣泡及/或連續氣泡。
金屬層積層板用多孔質樹脂膜1之孔隙率例如為50%以上,較佳為60%以上,更佳為70%以上,進而較佳為80%以上。再者,金屬層積層板用多孔質樹脂膜1之孔隙率例如未達100%,進而為99%以下。金屬層積層板用多孔質樹脂膜1之孔隙率之測定方法記載於下文之實施例中。
金屬層積層板用多孔質樹脂膜1之孔隙率根據(下述)多孔化劑之種類及/或調配量進行調整。
金屬層積層板用多孔質樹脂膜1於頻率60 GHz下之介電常數例如為2.5以下,較佳為1.9以下,更佳為1.6以下,又,例如超過1.0。金屬層積層板用多孔質樹脂膜1之介電常數係藉由使用頻率60 GHz之諧振器法進行實測。
金屬層積層板用多孔質樹脂膜1於頻率60 GHz下之介電損耗因數例如為0.006以下,又,例如超過0。金屬層積層板用多孔質樹脂膜1之介電損耗因數係藉由使用頻率60 GHz之諧振器法進行實測。
作為金屬層積層板用多孔質樹脂膜1之材料,例如可例舉熱硬化性樹脂。
作為熱硬化性樹脂,例如可例舉:聚碳酸酯樹脂、聚醯亞胺樹脂、氟化聚醯亞胺樹脂、環氧樹脂、酚系樹脂、尿素樹脂、三聚氰胺樹脂、鄰苯二甲酸二烯丙酯樹脂、矽酮樹脂、熱硬化性聚胺酯樹脂、氟樹脂(含氟烯烴之聚合物(具體為聚四氟乙烯(PTFE)))、及液晶聚合物(LCP)。該等可單獨使用或併用2種以上。
上述樹脂中,就機械強度之觀點而言,較佳者可例舉聚醯亞胺樹脂。再者,包括聚醯亞胺樹脂之物性及製造方法在內之詳細內容例如記載於WO2018/186486號中。
金屬層積層板用多孔質樹脂膜1可具有形成於其厚度方向一面與另一面之表層(未圖示)。
接下來,對金屬層積層板用多孔質樹脂膜1之製造方法進行說明。
具體而言,首先準備由假想線表示之基材膜2。基材膜2沿著面方向延伸。基材膜2之材料例如可例舉金屬及樹脂。就能夠將基材膜2轉用作金屬層積層板10中之第1金屬層11(參照圖2)之方面而言,較佳者可例舉金屬。作為金屬,例如可例舉:銅、鐵、銀、金、鋁、鎳及該等之合金(不鏽鋼、青銅)。作為金屬,較佳者可例舉銅。基材膜2之厚度例如為0.1 μm以上,較佳為1 μm以上,又,例如為100 μm以下,較佳為50 μm以下。
然後,製備包含上述樹脂之前驅物、多孔化劑、成核劑及溶劑之清漆,然後,將清漆塗佈於基材膜2之厚度方向一面而形成塗膜。清漆中之多孔化劑、成核劑及溶劑之種類及調配比率等例如記載於WO2018/186486號中。尤其是多孔化劑之質量份數(調配比率)相對於前驅物100質量份,較佳為20質量份以上,更佳為100質量份以上,又,較佳為300質量份以下,更佳為250質量份以下。
對樹脂為聚醯亞胺樹脂之情形進行說明。聚醯亞胺樹脂之前驅物例如為二胺成分與酸二酐成分之反應產物。作為二胺成分,例如可例舉:芳香族二胺、脂肪族二胺及脂環族二胺。作為二胺成分,較佳者可例舉芳香族二胺。
作為芳香族二胺,可例舉:一級二胺、二級二胺及三級二胺。
一級二胺含有單個芳香環。作為一級二胺,例如可例舉:苯二胺、二甲基苯二胺及乙基甲基苯二胺。就機械強度之觀點而言,較佳者可例舉苯二胺。作為苯二胺,例如可例舉:鄰苯二胺、間苯二胺及對苯二胺。作為苯二胺,較佳者可例舉對苯二胺。
二級二胺含有複數個芳香環及配置於該等之間之醚鍵。作為二級二胺,例如可例舉氧二苯胺。作為氧二苯胺,例如可例舉3,4'-氧二苯胺及4,4'-氧二苯胺。就機械強度之觀點而言,較佳者可例舉4,4'-氧二苯胺。
三級二胺含有複數個芳香環及配置於該等之間之酯鍵。三級二胺係降低金屬層積層板用多孔質樹脂膜1之上述熱膨脹係數之比率(Z/X)之成分。作為三級二胺,例如可例舉胺基苯基胺基苯甲酸酯,較佳者可例舉4-胺基苯基-4-胺基苯甲酸酯。
再者,作為芳香族二胺,除一級二胺至三級二胺以外,例如亦可例舉:4,4'-亞甲基二苯胺、4,4'-二亞甲基二苯胺、4,4'-三亞甲基二苯胺及雙(4-胺基苯基)碸。
上述二胺成分可單獨使用,又,可併用該等成分。作為二胺成分,較佳者可例舉一級二胺、二級二胺及三級二胺之組合。更佳者可例舉對苯二胺、4,4'-氧二苯胺及4-胺基苯基-4-胺基苯甲酸酯之組合。
再者,對苯二胺有時簡稱為PDA。4,4'-氧二苯胺(別名:4,4'-二胺基苯醚)有時簡稱為ODA。4-胺基苯基-4-胺基苯甲酸酯有時簡稱為APAB。
二胺成分中之一級二胺之莫耳分率例如為10莫耳%以上,較佳為20莫耳%以上,又,例如為70莫耳%以下,較佳為65莫耳%以下。二胺成分中之二級二胺之莫耳分率例如為5莫耳%以上,較佳為10莫耳%以上,又,例如為40莫耳%以下,較佳為30莫耳%以下。二胺成分中之三級二胺之莫耳分率例如為5莫耳%以上,較佳為10莫耳%以上,又,例如為40莫耳%以下,較佳為30莫耳%以下。
<酸二酐成分>
酸二酐成分例如含有包含芳香環之酸二酐。作為包含芳香環之酸二酐,例如可例舉芳香族四羧酸二酐。作為芳香族四羧酸二酐,例如可例舉:苯四羧酸二酐、二苯甲酮四羧酸二酐、聯苯四羧酸二酐、聯苯碸四羧酸二酐及萘四羧酸二酐。
作為苯四羧酸二酐,例如可例舉苯-1,2,4,5-四羧酸二酐(別名:均苯四甲酸二酐)。作為二苯甲酮四羧酸二酐,例如可例舉3,3'-4,4'-二苯甲酮四羧酸二酐。作為聯苯四羧酸二酐,例如可例舉:3,3'-4,4'-聯苯四羧酸二酐、2,2'-3,3'-聯苯四羧酸二酐、2,3,3',4'-聯苯四羧酸二酐及3,3',4,4'-二苯醚四羧酸二酐。作為聯苯碸四羧酸二酐,例如可例舉3,3',4,4'-聯苯碸四羧酸二酐。作為萘四羧酸二酐,例如可例舉:2,3,6,7-萘四羧酸二酐、1,2,5,6-萘四羧酸二酐、1,2,4,5-萘四羧酸二酐及1,4,5,8-萘四羧酸二酐。該等可單獨使用或併用。作為酸二酐成分,就機械強度之觀點而言,較佳者可例舉聯苯四羧酸二酐,更佳者可例舉3,3'-4,4'-聯苯四羧酸二酐。再者,3,3'-4,4'-聯苯四羧酸二酐有時簡稱為BPDA。
二胺成分與酸二酐成分之比率係以二胺成分之胺基(-NH
2)之莫耳量與酸二酐成分之酸酐基(-CO-O-CO-)之莫耳量例如成為等量的方式進行調整。
為了製備聚醯亞胺樹脂之前驅物,調配上述二胺成分、上述酸二酐成分及溶劑,製備清漆,將該清漆加熱而製備前驅物溶液。繼而,向前驅物溶液中調配成核劑及多孔化劑而製備多孔前驅物溶液。其後,將多孔前驅物溶液塗佈於基材膜2之厚度方向一面而形成塗膜。
其後,藉由加熱使塗膜乾燥,從而形成前驅物膜。藉由上述加熱,去除溶劑,一面製備以成核劑為核之具有聚醯亞胺樹脂前驅物與多孔化劑之相分離結構之前驅物膜。
其後,例如藉由使用超臨界二氧化碳作為溶劑之超臨界提取法,自前驅物膜中提取(抽掉或去除)多孔化劑。
其後,藉由加熱使前驅物膜硬化,形成包含聚醯亞胺樹脂之金屬層積層板用多孔質樹脂膜1。該金屬層積層板用多孔質樹脂膜1之厚度方向另一面與基材膜2接觸。
其後,如圖1之實線所示,視需要去除基材膜2。例如,若基材膜2之材料為金屬,則使用剝離液將基材膜2溶解。作為剝離液,例如可例舉FeCl
3。藉此獲得金屬層積層板用多孔質樹脂膜1。
接下來,如圖3所示,對具備金屬層積層板用多孔質樹脂膜1之金屬層積層板10進行說明。該金屬層積層板10具備金屬層積層板用多孔質樹脂膜1及金屬層4。
金屬層積層板用多孔質樹脂膜1包含貫通孔9。貫通孔9貫通金屬層積層板用多孔質樹脂膜1之厚度方向。貫通孔9於俯視下之形狀及尺寸並無特別限定。
金屬層4一體地具備第1金屬層11、第2金屬層12及導通部5。
第1金屬層11配置於金屬層積層板用多孔質樹脂膜1之厚度方向另一面。作為第1金屬層11之材料,可例舉基材膜2中例示之金屬。作為第1金屬層11之材料,較佳者可例舉銅。第1金屬層11之厚度例如為0.1 μm以上,較佳為1 μm以上,又,例如為100 μm以下,較佳為50 μm以下。
第2金屬層12配置於金屬層積層板用多孔質樹脂膜1之厚度方向一面。再者,第2金屬層12亦可經由未圖示之接著劑層而配置於金屬層積層板用多孔質樹脂膜1之厚度方向一面。作為第1金屬層11之材料,可例舉基材膜2中例示之金屬。較佳者可例舉銅。第2金屬層12之厚度例如為0.1 μm以上,較佳為1 μm以上,又,例如為100 μm以下,較佳為50 μm以下。
導通部5配置於金屬層積層板用多孔質樹脂膜1中面向貫通孔9之內周面7。具體而言,導通部5與內周面7接觸。導通部5將面向貫通孔9之第1金屬層11與第2金屬層連結。藉此,導通部5將第1金屬層11與第2金屬層12電性連接。導通部5之材料與第1金屬層11之材料相同。導通部5之厚度例如為1 μm以上,較佳為10 μm以上,又,例如為500 μm以下,較佳為250 μm以下。導通部5之厚度係自內周面7至貫通孔9之內側之長度。
對金屬層積層板10之製造方法進行說明。首先,準備圖2所示之金屬層積層板用多孔質樹脂膜1、第1金屬層11及第2金屬層12之積層體8。若基材膜2之材料為金屬,則不將該基材膜2去除,而直接用作第1金屬層11。另一方面,於金屬層積層板用多孔質樹脂膜1之厚度方向一面配置第2金屬層12。藉此,如圖2所示,獲得於厚度方向上由第1金屬層11與第2金屬層12夾著之金屬層積層板用多孔質樹脂膜1。
其後,如圖3所示,形成於厚度方向上貫通積層體8之貫通孔9。作為貫通孔9之形成方法,例如可例舉鑽孔器穿孔及雷射加工。
其後,例如藉由鍍覆於內周面7形成導通部5。導通部5具有筒形狀或柱形狀。
藉此,製造金屬層積層板10。
其後,藉由蝕刻等使第1金屬層11及第2金屬層12形成圖案。其後,藉由回焊例如將第1金屬層11與其他基板(未圖示)電性連接。回焊時之溫度例如為100℃以上且為150℃以下。
該金屬層積層板10例如用於第五代(5G)規格之無線通信或高速軟性印刷基板(FPC)。
(一實施方式之作用效果)
於該金屬層積層板用多孔質樹脂膜1中,厚度方向之熱膨脹係數Z相對於最小熱膨脹係數X之比率(Z/X)較低為3.5以下。因此,於高溫環境下能夠抑制導通部5(配置於貫通孔9之內周面7之金屬層4)所受之應力。因此,能夠抑制上述導通部5之損傷。損傷包括龜裂及斷開。其結果為,能夠製造電性連接可靠性優異之金屬層積層板10。
於圖3所示之金屬層積層板10中,導通部5之損傷得到抑制。因此,該金屬層積層板10之電性連接可靠性優異。
(變化例)
於以下變化例中,對與上述一實施方式相同之構件及步驟標註相同參照符號,並省略其詳細說明。又,除特別說明外,變化例能夠起到與一實施方式相同之作用效果。進而可將一實施方式及其變化例適當組合。
[實施例]
以下示出實施例及比較例,對本發明更具體地進行說明。再者,本發明不受實施例及比較例任何限定。又,以下記載中所使用之調配比率(含有比率)、物性值、參數等具體數值可替換成上述「實施方式」中所記載之與該等對應之調配比率(含有比率)、物性值、參數等相關記載之上限(定義為「以下」、「未達」之數值)或下限(定義為「以上」、「超過」之數值)。
(實施例1)
向具備攪拌機及溫度計之反應裝置中放入PDA 71.37 g(0.66莫耳)、ODA 44.05 g(0.22莫耳)及APAB 50.22 g(0.22莫耳),加入作為溶劑之N-甲基-2-吡咯啶酮(NMP)2300 g進行攪拌,製備PDA、ODA及APAB之NMP溶液。再者,NMP溶液含有二胺成分1.10莫耳。
繼而,向PDA、ODA及APAB之NMP溶液中緩慢添加3,3'-4,4'-聯苯四羧酸二酐(3,3'-4,4'-BPDA)323.64 g(1.10莫耳),進而加入N-甲基-2-吡咯啶酮(NMP)331 g,升溫至80℃後攪拌10小時,獲得聚醯亞胺前驅物溶液。
相對於聚醯亞胺前驅物溶液之固形物成分100質量份,加入作為成核劑之中值粒徑為1 μm以下之PTFE粉末3質量份、作為多孔化劑之重量平均分子量為400之聚氧乙烯二甲醚(日油(股)製造,等級:MM400)200質量份、及2-甲基咪唑(四國化成工業(股)製造之2Mz-H)4質量份,獲得多孔前驅物溶液。以刮塗方式將該多孔前驅物溶液塗佈於包含銅之基材膜2(第1金屬層11),形成塗膜。繼而,以120~160℃使塗膜乾燥約7分鐘,製作厚度為50 μm之前驅物膜。
將該前驅物膜浸漬於在60℃下加壓至30 MPa之二氧化碳中,流通8小時,藉此促進多孔化劑之提取去除及殘存NMP之相分離、多孔之形成。其後將二氧化碳減壓。
其後,於真空下以300℃~400℃之溫度對前驅物膜進行約5小時熱處理,促進殘存成分之去除及醯亞胺化,藉此獲得配置於基材膜2之厚度方向一面之金屬層積層板用多孔質樹脂膜1。
其後,將基材膜2及金屬層積層板用多孔質樹脂膜1浸漬於FeCl
3溶液中,而使基材膜2溶解去除。藉此製造金屬層積層板用多孔質樹脂膜1。金屬層積層板用多孔質樹脂膜1於頻率60 GHz下之介電常數及介電損耗因數分別為1.51及0.002。
(實施例2)
以與實施例1相同之方式製造金屬層積層板用多孔質樹脂膜1。但是,將聚氧乙烯二甲醚之質量份數自200質量份變更為150質量份。金屬層積層板用多孔質樹脂膜1於頻率60 GHz下之介電常數及介電損耗因數分別為1.70及0.002。
(實施例3)
以與實施例1相同之方式製造金屬層積層板用多孔質樹脂膜1。但是,將聚氧乙烯二甲醚之質量份數自200質量份變更為50質量份。
金屬層積層板用多孔質樹脂膜1於頻率60 GHz下之介電常數及介電損耗因數分別為2.00及0.002。
(比較例1)
向具備攪拌機及溫度計之反應裝置中放入PDA 1444 g(13.36莫耳)及ODA 669 g(3.34莫耳),加入NMP 28534 g進行攪拌,製備PDA及ODA之NMP溶液。再者,NMP溶液含有二胺成分16.70莫耳。
然後,向該溶液中緩慢添加BPDA 4913 g(16.70莫耳),進而加入作為成核劑之中值粒徑為1 μm以下之PTFE粉末3質量份、及N-甲基-2-吡咯啶酮(NMP)6658 g進行攪拌,於25℃下攪拌3小時,升溫至80℃後攪拌20小時,獲得聚醯亞胺前驅物溶液。
相對於該聚醯亞胺前驅物溶液之固形物成分100質量份,加入作為多孔化劑之重量平均分子量為400之聚氧乙烯二甲醚(日油(股)製造,等級:MM400)200質量份、2-甲基咪唑(四國化成工業(股)製造之2Mz-H)4質量份、及N-甲基-2-吡咯啶酮(NMP)5091質量份進行攪拌,獲得均勻溶液。以模塗方式將該溶液塗佈於銅箔,以120℃使其乾燥7分鐘,製作厚度為60 μm左右之具有相分離結構之前驅物膜。
將該前驅物膜浸漬於在60℃下加壓至30 MPa之二氧化碳中,並流通8小時,藉此促進聚氧乙烯二甲醚之提取去除及殘存NMP之相分離、孔形成。其後將二氧化碳減壓。
繼而,於真空下以300℃~400℃之溫度對前驅物膜進行約5小時熱處理,促進殘存成分之去除及醯亞胺化,藉此獲得配置於第1金屬層11之厚度方向一面之金屬層積層板用多孔質樹脂膜1。
其後,藉由將第1金屬層11及金屬層積層板用多孔質樹脂膜1浸漬於FeCl
3溶液中而使第1金屬層11溶解去除。藉此製造金屬層積層板用多孔質樹脂膜1。金屬層積層板用多孔質樹脂膜1於頻率60 GHz下之介電常數及介電損耗因數分別為1.51及0.006。
將各實施例及比較例之三級二胺(APAB)之莫耳分率及多孔化劑之調配質量份數記載於表1中。
<評估>
針對各實施例及比較例之金屬層積層板用多孔質樹脂膜1評估以下事項。將該等之結果記載於表1中。
(金屬層積層板用多孔質樹脂膜1之孔隙率)
藉由基於下述式之計算而求出金屬層積層板用多孔質樹脂膜1之孔隙率。
金屬層積層板用多孔質樹脂膜1之介電常數=空氣之介電常數×孔隙率+聚醯亞胺之介電常數×(1-孔隙率)
此處,空氣之介電常數為1,聚醯亞胺之介電常數為3.5,故而
金屬層積層板用多孔質樹脂膜1之介電常數=孔隙率+3.5(1-孔隙率)
孔隙率=(3.5-金屬層積層板用多孔質樹脂膜1之介電常數)/2.5
孔隙率(%)=[(3.5-金屬層積層板用多孔質樹脂膜1之介電常數)/2.5]×100
(金屬層積層板用多孔質樹脂膜1之最小熱膨脹係數X)
將金屬層積層板用多孔質樹脂膜1切割成4 mm×40 mm之大小,製作樣品。將樣品放置於熱機械分析裝置(TA Instruments公司製造之TMA Q400),一面於面方向上對樣品施加0.01 N之負載,一面以升溫速度2.0℃/min自0℃升溫至200℃,並以降溫速度5.0℃/min自200℃冷卻至0℃。其後,以升溫速度2.0℃/min自0℃升溫至200℃,求出自0℃至200℃之平均熱膨脹係數。對複數個面方向求出上述平均熱膨脹係數,求出其中之最小值作為最小熱膨脹係數X。
(金屬層積層板用多孔質樹脂膜1之厚度方向上之熱膨脹係數Z)
將金屬層積層板用多孔質樹脂膜1切割成5 mm×5 mm之大小,製作樣品。將樣品放置於雷射熱膨脹計(ULVAC理工(股)製造之雷射熱膨脹計LIX-1型),先對樣品實施200℃之前熱處理再開始測定。於2℃/min之等速升溫條件下進行測定,於氦氣中,在-65℃~200℃之溫度範圍內一面於厚度方向上施加約17 g之外加負載,一面對樣品之厚度方向進行測定。
上述最小熱膨脹係數X及熱膨脹係數Z之各者之計算式設定如下。
T:溫度(25℃)
L0:25℃下之樣品長度
L:與基準溫度相比之膨脹量
L/L0:自基準溫度至各溫度之線膨脹率
熱膨脹係數={(ΔL/L0)T1-(ΔL/L0)T2}/(T1-T2)
<導通部之損傷>
藉由鑽孔器穿孔於金屬層積層板用多孔質樹脂膜1形成貫通孔。貫通孔於俯視下呈圓形,其直徑為300 μm。其後,藉由無電解鍍銅及電鍍銅於貫通孔之內周面形成包含銅之導通部5,製備樣品。
導通部5之厚度為10 μm。
藉由在溫度循環試驗(-65℃與150℃之間之熱循環試驗)中對該樣品測定電阻值,而檢測導通部5之龜裂。根據以下基準評估導通部5之損傷。
<基準>
○:於2000循環以內,導通部5未出現龜裂。
△:超過1000循環且於2000循環以內,導通部5出現龜裂。
×:於1000循環以內,導通部5出現龜裂。
[表1]
實施例1 | 實施例2 | 實施例3 | 比較例1 | ||
三級二胺(APAB) (莫耳%) | 20 | 20 | 20 | - | |
多孔化劑(聚氧乙烯二甲醚) (相對於聚醯亞胺樹脂前驅物100質量份而言之質量份) | 200 | 150 | 50 | 200 | |
金屬層積層板用多孔質樹脂膜之評估 | 孔隙率(%) | 80 | 70 | 60 | 80 |
最小熱膨脹係數X | 23.3 | 25.0 | 22.3 | 23.0 | |
厚度方向之熱膨脹係數Z(ppm/K) | 61.0 | 55.0 | 75.0 | 91.0 | |
厚度方向之熱膨脹係數Z/最小熱膨脹係數X | 2.6 | 2.2 | 3.4 | 4.0 | |
金屬層積層板之評估 | 貫通孔中之導通部之損傷 | ○ | ○ | △ | × |
再者,上述發明係作為本發明之例示性實施方式而提供,但其僅為示例,不應以限定性方式來解釋。對本技術領域之業者而言顯而易見之本發明之變化例包含於下述申請專利範圍內。
1:金屬層積層板用多孔質樹脂膜
2:基材膜
4:金屬層
5:導通部
7:內周面
8:積層體
9:貫通孔
10:金屬層積層板
11:第1金屬層
12:第2金屬層
X:最小熱膨脹係數
Z:熱膨脹係數
圖1係本發明之金屬層積層板用多孔質樹脂膜之一實施方式之剖視圖。
圖2係具備圖1所示之金屬層積層板用多孔質樹脂膜且尚未形成貫通孔之金屬層積層板之剖視圖。
圖3係形成有貫通孔之金屬層積層板之剖視圖。
1:金屬層積層板用多孔質樹脂膜
2:基材膜
11:第1金屬層
Claims (2)
- 一種金屬層積層板用多孔質樹脂膜,其係用於金屬層之積層者,且 具有與厚度方向正交之面方向上之最小熱膨脹係數X、及上述厚度方向之熱膨脹係數Z, 上述厚度方向之熱膨脹係數Z相對於上述最小熱膨脹係數X之比率(Z/X)為3.5以下。
- 一種金屬層積層板,其具備: 具有貫通上述厚度方向之貫通孔之如請求項1之上述金屬層積層板用多孔質樹脂膜;及 金屬層,其配置於上述金屬層積層板用多孔質樹脂膜之厚度方向一面、另一面及上述貫通孔之內周面。
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JPH0634450A (ja) | 1992-07-13 | 1994-02-08 | Ngk Spark Plug Co Ltd | 温度センサ |
JP3360850B2 (ja) | 1992-09-21 | 2003-01-07 | 株式会社日立製作所 | 銅系酸化触媒とその用途 |
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