TW202236447A - 包括被配置用於電磁干擾遮罩和散熱的金屬層的封裝 - Google Patents

包括被配置用於電磁干擾遮罩和散熱的金屬層的封裝 Download PDF

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Publication number
TW202236447A
TW202236447A TW111107677A TW111107677A TW202236447A TW 202236447 A TW202236447 A TW 202236447A TW 111107677 A TW111107677 A TW 111107677A TW 111107677 A TW111107677 A TW 111107677A TW 202236447 A TW202236447 A TW 202236447A
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Taiwan
Prior art keywords
integrated device
substrate
layer
encapsulation
package
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TW111107677A
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English (en)
Chinese (zh)
Inventor
馬克 修士根
菲利普麥克 傑格
Original Assignee
美商高通科技公司
德商Rf360歐洲股份有限公司
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Application filed by 美商高通科技公司, 德商Rf360歐洲股份有限公司 filed Critical 美商高通科技公司
Publication of TW202236447A publication Critical patent/TW202236447A/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/021Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/20Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/10Arrangements for heating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/22Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/258Metallic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77Auxiliary members characterised by their shape
    • H10W40/778Auxiliary members characterised by their shape in encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/261Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions
    • H10W42/273Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions the arrangements being between laterally adjacent chips, e.g. walls between chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/261Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions
    • H10W42/276Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/016Manufacture or treatment using moulds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
TW111107677A 2021-03-03 2022-03-03 包括被配置用於電磁干擾遮罩和散熱的金屬層的封裝 TW202236447A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/191,550 2021-03-03
US17/191,550 US12142577B2 (en) 2021-03-03 2021-03-03 Package comprising metal layer configured for electromagnetic interference shield and heat dissipation

Publications (1)

Publication Number Publication Date
TW202236447A true TW202236447A (zh) 2022-09-16

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TW111107677A TW202236447A (zh) 2021-03-03 2022-03-03 包括被配置用於電磁干擾遮罩和散熱的金屬層的封裝

Country Status (8)

Country Link
US (1) US12142577B2 (enExample)
EP (1) EP4302331A2 (enExample)
JP (1) JP2024508408A (enExample)
KR (1) KR20230153374A (enExample)
CN (1) CN116964729A (enExample)
PH (1) PH12023551687A1 (enExample)
TW (1) TW202236447A (enExample)
WO (1) WO2022186953A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
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TWI840075B (zh) * 2023-01-05 2024-04-21 矽品精密工業股份有限公司 電子封裝件及其製法
TWI863387B (zh) * 2023-05-01 2024-11-21 台灣積體電路製造股份有限公司 封裝模組、封裝結構及形成所述封裝模組的方法
TWI865147B (zh) * 2023-01-05 2024-12-01 矽品精密工業股份有限公司 電子封裝件及其製法
TWI883373B (zh) * 2023-01-17 2025-05-11 華東科技股份有限公司 具散熱功能及電磁防護功能的晶片封裝結構的製造方法

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US20230245985A1 (en) * 2022-02-01 2023-08-03 Skyworks Solutions, Inc. Shielded wafer level chip scale package with shield connected to ground via redistribution layers
CN121694066A (zh) * 2023-07-26 2026-03-17 长江存储科技有限责任公司 芯片封装结构、半导体结构及其制作方法
CN119232106B (zh) * 2024-09-20 2025-12-05 泉州市三安集成电路有限公司 声表面波器件及其制备方法

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JP2009277910A (ja) * 2008-05-15 2009-11-26 Sharp Corp 半導体モジュールおよび半導体モジュールの製造方法
US8373264B2 (en) * 2008-07-31 2013-02-12 Skyworks Solutions, Inc. Semiconductor package with integrated interference shielding and method of manufacture thereof
KR102250612B1 (ko) 2012-06-14 2021-05-10 스카이워크스 솔루션즈, 인코포레이티드 고조파 종단 회로를 포함하는 전력 증폭기 모듈 및 관련된 시스템, 장치, 및 방법
KR20140057979A (ko) * 2012-11-05 2014-05-14 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
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Publication number Priority date Publication date Assignee Title
TWI840075B (zh) * 2023-01-05 2024-04-21 矽品精密工業股份有限公司 電子封裝件及其製法
TWI865147B (zh) * 2023-01-05 2024-12-01 矽品精密工業股份有限公司 電子封裝件及其製法
TWI883373B (zh) * 2023-01-17 2025-05-11 華東科技股份有限公司 具散熱功能及電磁防護功能的晶片封裝結構的製造方法
TWI863387B (zh) * 2023-05-01 2024-11-21 台灣積體電路製造股份有限公司 封裝模組、封裝結構及形成所述封裝模組的方法

Also Published As

Publication number Publication date
KR20230153374A (ko) 2023-11-06
JP2024508408A (ja) 2024-02-27
CN116964729A (zh) 2023-10-27
US20220285286A1 (en) 2022-09-08
EP4302331A2 (en) 2024-01-10
US12142577B2 (en) 2024-11-12
WO2022186953A3 (en) 2022-10-20
WO2022186953A2 (en) 2022-09-09
PH12023551687A1 (en) 2024-04-22

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