TW202230484A - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TW202230484A
TW202230484A TW110145151A TW110145151A TW202230484A TW 202230484 A TW202230484 A TW 202230484A TW 110145151 A TW110145151 A TW 110145151A TW 110145151 A TW110145151 A TW 110145151A TW 202230484 A TW202230484 A TW 202230484A
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TW
Taiwan
Prior art keywords
semiconductor device
manufacturing
adhesive layer
curable adhesive
layer
Prior art date
Application number
TW110145151A
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English (en)
Chinese (zh)
Inventor
松原弘明
池田大助
大河原奎佑
祖父江省吾
小川紗瑛子
Original Assignee
日商昭和電工材料股份有限公司
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Application filed by 日商昭和電工材料股份有限公司 filed Critical 日商昭和電工材料股份有限公司
Publication of TW202230484A publication Critical patent/TW202230484A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
TW110145151A 2020-12-04 2021-12-03 半導體裝置之製造方法 TW202230484A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2020/045335 WO2022118479A1 (ja) 2020-12-04 2020-12-04 半導体装置の製造方法
WOPCT/JP2020/045335 2020-12-04

Publications (1)

Publication Number Publication Date
TW202230484A true TW202230484A (zh) 2022-08-01

Family

ID=81853353

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110145151A TW202230484A (zh) 2020-12-04 2021-12-03 半導體裝置之製造方法

Country Status (4)

Country Link
US (1) US12604756B2 (https=)
JP (2) JP7226664B2 (https=)
TW (1) TW202230484A (https=)
WO (2) WO2022118479A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022118479A1 (ja) 2020-12-04 2022-06-09 昭和電工マテリアルズ株式会社 半導体装置の製造方法
US11887862B2 (en) 2021-09-14 2024-01-30 Deca Technologies Usa, Inc. Method for redistribution layer (RDL) repair by mitigating at least one defect with a custom RDL
WO2024135070A1 (ja) * 2022-12-20 2024-06-27 デンカ株式会社 正極組成物、正極形成用塗液、正極、電池、正極形成用塗液の製造方法、正極の製造方法及び電池の製造方法
US12362322B2 (en) * 2023-06-22 2025-07-15 Deca Technologies Usa, Inc. Method of making a fan-out semiconductor assembly with an intermediate carrier
JP2025161446A (ja) * 2024-04-12 2025-10-24 株式会社レゾナック 半導体装置形成用積層体及び半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3853247B2 (ja) 2002-04-16 2006-12-06 日東電工株式会社 電子部品用加熱剥離型粘着シートおよび電子部品の加工方法並びに電子部品
JP2006222164A (ja) 2005-02-08 2006-08-24 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
JP2010034217A (ja) 2008-07-28 2010-02-12 Hitachi Ltd 有機薄膜トランジスタの製造方法
JP5810957B2 (ja) 2012-02-17 2015-11-11 富士通株式会社 半導体装置の製造方法及び電子装置の製造方法
JP2017050464A (ja) 2015-09-03 2017-03-09 凸版印刷株式会社 配線基板積層体、その製造方法及び半導体装置の製造方法
WO2017149810A1 (ja) * 2016-02-29 2017-09-08 三井金属鉱業株式会社 キャリア付銅箔及びその製造方法、並びに配線層付コアレス支持体及びプリント配線板の製造方法
JP6769132B2 (ja) 2016-06-22 2020-10-14 日立化成株式会社 半導体装置の製造方法
JP6859729B2 (ja) * 2016-07-05 2021-04-14 昭和電工マテリアルズ株式会社 仮固定用樹脂組成物、仮固定用樹脂フィルム、仮固定用樹脂フィルムシート及び半導体装置の製造方法
KR102454056B1 (ko) 2017-03-31 2022-10-14 린텍 가부시키가이샤 반도체 장치의 제조 방법 및 양면 점착 시트
JP2019129179A (ja) * 2018-01-22 2019-08-01 日立化成株式会社 半導体装置の製造方法
JP2019211218A (ja) 2018-05-31 2019-12-12 セイコーエプソン株式会社 物理量センサー、複合センサー、慣性計測ユニット、移動体測位装置、携帯型電子機器、電子機器、移動体、走行支援システム、表示装置、および物理量センサーの製造方法
US10510713B1 (en) * 2018-10-28 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semicondcutor package and method of manufacturing the same
CN113195668B (zh) 2018-12-20 2023-01-13 昭和电工材料株式会社 临时固定用树脂组合物、临时固定用树脂膜及临时固定用片、以及半导体装置的制造方法
US11183482B2 (en) * 2019-09-17 2021-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Shift control method in manufacture of semiconductor device
WO2021058663A1 (en) * 2019-09-25 2021-04-01 Deepmind Technologies Limited Augmenting attention-based neural networks to selectively attend to past inputs
WO2022118479A1 (ja) 2020-12-04 2022-06-09 昭和電工マテリアルズ株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPWO2022118929A1 (https=) 2022-06-09
JP7226664B2 (ja) 2023-02-21
JP2023056529A (ja) 2023-04-19
US12604756B2 (en) 2026-04-14
US20240030183A1 (en) 2024-01-25
WO2022118479A1 (ja) 2022-06-09
WO2022118929A1 (ja) 2022-06-09

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