TW202222690A - 異形二氧化矽系微粒子分散液及其製造方法、粒子連結型二氧化矽微粒子分散液及其製造方法、以及研磨用研磨粒分散液 - Google Patents

異形二氧化矽系微粒子分散液及其製造方法、粒子連結型二氧化矽微粒子分散液及其製造方法、以及研磨用研磨粒分散液 Download PDF

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TW202222690A
TW202222690A TW110128387A TW110128387A TW202222690A TW 202222690 A TW202222690 A TW 202222690A TW 110128387 A TW110128387 A TW 110128387A TW 110128387 A TW110128387 A TW 110128387A TW 202222690 A TW202222690 A TW 202222690A
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TW
Taiwan
Prior art keywords
particle
silica
particles
particle dispersion
mass
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TW110128387A
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English (en)
Chinese (zh)
Inventor
中山和洋
山田大輔
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日商日揮觸媒化成股份有限公司
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Publication of TW202222690A publication Critical patent/TW202222690A/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C01B33/1415—Preparation of hydrosols or aqueous dispersions by suspending finely divided silica in water
    • C01B33/1417—Preparation of hydrosols or aqueous dispersions by suspending finely divided silica in water an aqueous dispersion being obtained
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C01B33/142—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates
    • C01B33/143—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates of aqueous solutions of silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW110128387A 2020-12-09 2021-08-02 異形二氧化矽系微粒子分散液及其製造方法、粒子連結型二氧化矽微粒子分散液及其製造方法、以及研磨用研磨粒分散液 TW202222690A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020203938A JP2022091234A (ja) 2020-12-09 2020-12-09 異形シリカ系微粒子分散液およびその製造方法
JPJP2020-203938 2020-12-09

Publications (1)

Publication Number Publication Date
TW202222690A true TW202222690A (zh) 2022-06-16

Family

ID=81974368

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110128387A TW202222690A (zh) 2020-12-09 2021-08-02 異形二氧化矽系微粒子分散液及其製造方法、粒子連結型二氧化矽微粒子分散液及其製造方法、以及研磨用研磨粒分散液

Country Status (5)

Country Link
US (1) US20240002712A1 (ja)
JP (1) JP2022091234A (ja)
KR (1) KR20230117130A (ja)
TW (1) TW202222690A (ja)
WO (1) WO2022123820A1 (ja)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS627345U (ja) 1985-06-24 1987-01-17
JP2001150334A (ja) 2000-10-12 2001-06-05 Nissan Chem Ind Ltd 半導体ウェーハーの研磨方法及び研磨剤
JP4911961B2 (ja) * 2005-12-06 2012-04-04 日揮触媒化成株式会社 異方形状シリカゾルの製造方法
JP5431120B2 (ja) * 2009-11-06 2014-03-05 日本化学工業株式会社 コロイダルシリカの製造方法
JP5615529B2 (ja) * 2009-11-16 2014-10-29 日揮触媒化成株式会社 無機酸化物微粒子分散液、研磨用粒子分散液及び研磨用組成物
JP6710100B2 (ja) * 2016-05-18 2020-06-17 日揮触媒化成株式会社 シリカ系複合微粒子分散液の製造方法
TWI777011B (zh) * 2017-12-27 2022-09-11 日商日揮觸媒化成股份有限公司 研磨材料用鏈狀粒子分散液的製造方法
JP7137156B2 (ja) * 2018-02-26 2022-09-14 日産化学株式会社 細長い粒子形状を有するシリカゾルの製造方法
US11891307B2 (en) * 2018-10-10 2024-02-06 Jgc Catalysts And Chemicals Ltd. Silica-based particle dispersion and production method therefor
US20220144650A1 (en) * 2019-03-06 2022-05-12 Fuso Chemical Co., Ltd. Colloidal silica and method for producing same

Also Published As

Publication number Publication date
KR20230117130A (ko) 2023-08-07
WO2022123820A1 (ja) 2022-06-16
JP2022091234A (ja) 2022-06-21
US20240002712A1 (en) 2024-01-04

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