TW202215524A - 晶圓之加工方法以及研削裝置 - Google Patents

晶圓之加工方法以及研削裝置 Download PDF

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TW202215524A
TW202215524A TW110137361A TW110137361A TW202215524A TW 202215524 A TW202215524 A TW 202215524A TW 110137361 A TW110137361 A TW 110137361A TW 110137361 A TW110137361 A TW 110137361A TW 202215524 A TW202215524 A TW 202215524A
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wafer
grinding
protective film
film
diameter
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松岡祐哉
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日商迪思科股份有限公司
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    • B24—GRINDING; POLISHING
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    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
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    • B24—GRINDING; POLISHING
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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Abstract

[課題]提供一種新穎的技術，其用於抑制由保護膠膜的超出所導致之不良狀況發生，所述保護膠膜的超出係從因背面研削而直徑縮小之晶圓的正面超出。[解決手段]一種晶圓之加工方法，所述晶圓已在外周形成倒角部，所述晶圓之加工方法包含：膠膜黏貼步驟，其在晶圓的正面黏貼保護膠膜，且使保護膠膜的直徑與晶圓的直徑為相同直徑；研削步驟，其以研削磨石研削被保持台保持之晶圓的背面，以使晶圓的厚度變得較原厚度的一半更薄之方式進行薄化，藉此將晶圓的直徑縮徑，保護膠膜從晶圓超出，形成超出部；以及收縮步驟，其在實施研削步驟後，加熱保護膠膜的超出部使其收縮。

Description

晶圓之加工方法以及研削裝置
本發明係關於一種已在外周形成倒角部之晶圓之加工方法以及研削裝置。
以往，在半導體元件的製造過程中，在晶圓（半導體晶圓）的背面研削之際，為了保護晶圓的正面的元件，而在晶圓的正面黏貼保護膠膜。
然後，在晶圓的背面研削後，例如使用剝離膠膜來剝離保護膠膜。在剝離保護膠膜之際，將接著力強的剝離膠膜（剝離用膠膜）黏貼於保護膠膜，藉由拉起剝離膠膜而使剝離膠膜與保護膠膜一起剝離。
具體而言，如圖9（A）所示，在晶圓70的正面70a側黏貼保護膠膜72，並研削晶圓70的背面70b側。然後，在背面研削後，如圖9（B）所示，將晶圓70的正反進行反轉，背面70b側被黏貼於切割膠膜74，且以跨越保護膠膜72的邊緣部分之方式將剝離膠膜76按壓並黏貼於保護膠膜72後，拉起剝離膠膜76，藉此從晶圓70剝離保護膠膜72。
在專利文獻1中，揭露一種膠膜切割器（剝離用膠膜切割器）的構造，其用於供給、黏貼、切斷此剝離膠膜（剝離用膠膜）。 [習知技術文獻] [專利文獻]
專利文獻1：日本特開2019-102769號公報
[發明所欲解決的課題] 如圖9（B）所示，重要的是在保護膠膜72的外周緣黏貼剝離膠膜76。假設，若剝離膠膜76黏貼於較保護膠膜72的外周緣更內側部分而非黏貼於外周緣，則在拉起剝離膠膜76之際變得難以將保護膠膜72從晶圓70剝離，剝離膠膜76會從保護膠膜72剝離，而有可能產生保護膠膜72的剝離不良。
另一方面，如圖9（A）所示，晶圓70的外周為了提升處理性、防止破損而進行倒角，從正面至背面之剖面被形成為圓弧狀，並形成倒角部70m。因此，若將已在正面70a黏貼保護膠膜72之晶圓70的背面70b進行研削，例如薄化至厚度50µm，則保護膠膜72的直徑變得大於晶圓的直徑，保護膠膜72會從晶圓70的正面僅超出超出量M，而成為已形成超出部72m之狀態。
而且，如此在保護膠膜72的直徑大於晶圓70的直徑之狀態下，如圖9（B）所示，若欲將剝離膠膜76黏貼於保護膠膜72的外周緣，則從晶圓70超出之保護膠膜72的超出部72m會黏貼於切割膠膜74，而變得難以剝離保護膠膜72。
尤其，在為附有DAF（Die Attach Film，晶粒附接膜）的切割膠膜之情形中，若強行剝離已黏貼於DAF之保護膠膜，則有DAF會從切割膠膜剝落之虞。
因此，本發明之目的為提供一種晶圓之加工方法以及研削裝置，其可抑制由保護膠膜的超出所導致之不良狀況的發生，所述保護膠膜的超出係從因背面研削而直徑縮小之晶圓的正面超出。
[解決課題的技術手段] 本發明欲解決的課題係如以上所述，接著，說明用於解決此課題的手段。
根據本發明的一態樣，提供一種晶圓之加工方法，所述晶圓已在外周形成倒角部，所述晶圓之加工方法具備：膠膜黏貼步驟，其在晶圓的正面黏貼保護膠膜，且使保護膠膜的直徑與晶圓的直徑為相同直徑；保持步驟，其透過保護膠膜而以保持台保持晶圓並使背面露出；研削步驟，其以研削磨石研削被保持台保持之晶圓的背面，以使晶圓的厚度變得較原厚度的一半更薄之方式進行薄化，藉此將晶圓的直徑縮徑，保護膠膜從晶圓超出，形成超出部；以及收縮步驟，其在實施研削步驟後，加熱保護膠膜的超出部使其收縮。
根據本發明的另一態樣，提供一種研削裝置，其將已在外周形成倒角部且已在正面黏貼與晶圓相同直徑的保護膠膜之晶圓進行研削，且具備：保持台，其透過保護膠膜而保持晶圓；研削單元，其具有將被保持台保持之晶圓進行研削之多個研削磨石；以及加熱單元，其將保護膠膜從晶圓超出之超出部進行加熱使其收縮，所述超出部係藉由以研削單元研削晶圓並使晶圓的厚度薄化一半以上而將晶圓縮徑所形成。
較佳為，進一步具備：清洗單元，其清洗已被研削單元研削之晶圓，並且，加熱單元將已被清洗單元清洗之晶圓的保護膠膜的超出部進行加熱。
[發明功效] 根據本發明的加工方法，可消除因晶圓的薄化而形成之保護膠膜的超出部，在後續藉由剝離膠膜剝離保護膠膜之際，可防止超出部會附著於切割膠膜或DAF之不良狀況的發生。
並且，根據本發明的研削裝置，在從清洗單元搬出之際可為已消除保護膠膜的超出部之狀態，亦可在研削裝置中消除保護膠膜的超出的問題。
圖1係表示用於本發明的實施之研削裝置的構成例之立體圖。 此研削裝置1係藉由將被加工物亦即晶圓W的背面Wb進行研削加工而薄化晶圓W之裝置。作為加工對象的晶圓W，例如係將矽、藍寶石、氮化鎵等作為母材之圓板狀的半導體晶圓或光元件晶圓。
圖2係表示被加工物亦即晶圓W的一例。在圖2的例子中，晶圓W係以正面Wa成為下側且背面Wb成為上側之方式被配置，且正面Wa側黏貼保護膠膜T。帶狀的保護膠膜T係以沿著晶圓W的外周之方式被裁切，且與晶圓W成為一體。在晶圓W的正面Wa，在由形成為格子狀之分割預定線所劃分的各區域中，形成有元件D。
如圖1所示，研削裝置1具備：保持台10，其保持晶圓W；以及第一及第二研削單元20a、20b，其等研削保持於保持台10之晶圓W。並且，研削裝置1具備：搬送裝置40、旋轉台（turn table）50、清洗單元60及控制單元65等。
搬送裝置40用於將研削加工前的晶圓W供給至保持台10上，且回收研削加工後的晶圓W。搬送裝置40係包含以下部分而構成：容納多個研削加工前的晶圓W之搬入卡匣46、搬送機購42、暫置部43、搬入臂44、搬出臂45、及容納多個研削加工後的晶圓W之搬出卡匣41等。
搬入卡匣46與搬出卡匣41為同一構成，載置於研削裝置1的裝置本體2的預定位置。搬送機構42將搬入卡匣46內的晶圓W一片一片地取出並載置於暫置部43，且藉由第一及第二研削單元20a、20b施加研削加工，將已被清洗單元60清洗之晶圓W容納於搬出卡匣41內。搬入臂44及搬出臂45例如為能進行旋轉動作及升降動作之搬送用的臂。
搬入臂44將暫置部43上的晶圓W載置於搬出搬入位置的保持台10上，且搬出臂45將搬出搬入位置的保持台10上的研削加工後的晶圓W搬送至清洗單元60。載置於保持台10上之晶圓W在依序被第一及第二研削單元20a、20b施加研削加工後，被搬出臂45搬送至清洗單元60，並在被清洗單元60清洗後，被搬送機構42容納於搬出卡匣41。
在清洗單元60設有加熱單元80，所述加熱單元80用於加熱詳如後述之保護膠膜T（圖6）使其收縮。此外，加熱單元80之目的為將薄化加工後的晶圓W的保護膠膜進行加熱，只要在薄化加工後能加熱，則可配置於與清洗單元60不同處。
旋轉台50係設於裝置本體2的上表面之圓盤狀的工作台，且被設為能繞Z軸旋轉，並在預定的時間點被適當旋轉驅動。在旋轉台50上設有多個保持台10。在本實施方式中，在旋轉台50上設有三個保持台10，例如以120度的角度等間隔地配置。
保持台10係以露出晶圓W的背面Wb之狀態吸引保持晶圓W。保持台10的構成保持面10a之部分係由多孔陶瓷等所形成之圓盤形狀，透過未圖示之真空吸引路徑而與未圖示之真空吸引源連接，並透過保護膠膜T而吸引保持載置於保持面10a之晶圓W。
保持台10伴隨旋轉台50的旋轉而繞Z軸公轉，並且藉由繞Z軸自轉而使已吸引保持之晶圓W繞Z軸旋轉。保持台10被定位於最靠近搬送裝置40的搬出搬入位置，在該位置搬出搬入晶圓W，並且，藉由旋轉台50旋轉，而依序被移動至搬出搬入位置、粗研削位置、精研削位置、搬出搬入位置。
第一研削單元20a用於對已定位於粗研削位置之保持台10所保持之研削加工前的晶圓W的背面Wb施加粗研削加工而薄化晶圓W。第二研削單元20b用於對已定位於精研削位置之保持台10所保持之經施加粗研削加工之晶圓W的背面Wb施加精研削加工而薄化晶圓W。
第一及第二研削單元20a、20b分別被加工進給機構21加工進給。加工進給機構21將第一及第二研削單元20a、20b沿著Z軸方向靠近保持於保持台10之晶圓W，將第一及第二研削單元20a、20b加工進給。並且，加工進給機構21將第一及第二研削單元20a、20b沿著Z軸方向從保持於保持台10之晶圓W遠離，使第一及第二研削單元20a、20b從晶圓W離開。此外，第一研削單元20a研削之晶圓W的厚度較第二研削單元20b研削之晶圓W的厚度厚。
第一及第二研削單元20a、20b各自延伸至下方之主軸被馬達驅動，使固定於主軸的前端之研削輪23、23繞Z軸高速旋轉。在研削輪23、23分別設有研削磨石，藉由此研削磨石而研削加工晶圓W的背面Wb。
在第一及第二研削單元20a、20b中，在進行研削加工之際，使研削輪23一邊繞Z軸旋轉一邊藉由加工進給機構21在下方進行加工進給，藉此，研削磨石被按壓於晶圓W的背面Wb。此時，藉由保持台10的自轉而使晶圓W繞Z軸旋轉且由未圖示之研削水供給手段將研削水供給至晶圓W的背面Wb。
接著說明關於使用上述的裝置構成之加工方法之例。圖3係表示關於以下的加工方法的程序之流程圖。
＜膠膜黏貼步驟＞ 如圖2所示，係在晶圓W的正面Wa黏貼保護膠膜T且使保護膠膜T的直徑與晶圓的直徑為相同直徑之步驟。
具體而言，在較晶圓W大之保護膠膜T已黏貼晶圓W後，使切割器沿著晶圓W的外周切割保護膠膜T，藉此，如圖4（A）所示，晶圓W的最大直徑與保護膠膜T的直徑成為大致相同。
如圖4（A）的放大部分所示，晶圓W的外周部形成倒角部Wm。
＜保持步驟＞ 如圖4（B）所示，係透過保護膠膜T而以保持台10保持晶圓W並使背面Wb露出之步驟。
具體而言，如圖1所示，容納於搬入卡匣46之晶圓W被搬入保持台10，並以保持台10吸附保持晶圓W。
＜研削單元＞ 如圖5（A）（B）所示，係以研削磨石23a研削被保持台10保持之晶圓W的背面Wb，以使晶圓W的厚度變得較原厚度的一半更薄之方式進行薄化之步驟。此外，所謂晶圓W的原厚度，係指研削前的厚度。
具體而言，如圖1所示，藉由第一及第二研削單元20a、20b，依序實施粗研削加工與精研削加工，如圖5（B）所示，將晶圓W的厚度薄化至較原厚度的一半更薄的厚度H。
然後，如圖5（B）所示，藉由薄化而將晶圓W的原直徑D1縮徑成直徑D2，保護膠膜T從晶圓W僅超出超出量M，形成超出部Tm。
此外，如圖5（B）所示，形成於晶圓W的外周部之倒角部Wm除了被構成為圓弧狀以外，依據晶圓的種類，如圖5（C）所示之倒角部Wn般，有時會被構成為傾斜面狀。即使在此種形成圖5（C）所示之倒角部Wn之晶圓，保護膠膜T亦會因薄化而有大的超出。
＜收縮步驟＞ 如圖6（A）（B）所示，係加熱保護膠膜T的超出部Tm使其收縮之步驟。
在本實施方式中，藉由由噴吹熱風N之熱風槍所構成之加熱單元80，將熱風N噴吹至保護膠膜T。足以使超出部Tm收縮的時間與熱風N的溫度，較佳為因應保護膠膜T的材質、厚度而預先進行實驗並選定。熱風N的溫度例如可為90℃～120℃。
如圖1所示，此加熱單元80設於清洗單元60，如圖6（A）所示，關於在已載置於清洗單元60的旋轉工作台（spinner table）61的狀態之晶圓W，係設為在晶圓W的清洗後噴吹熱風N之構成。
此外，如圖6（B）所示，加熱單元80除了從上側（晶圓W側）將熱風N噴吹至保護膠膜T以外，亦可從下側（保護膠膜T側）噴吹。並且，作為加熱單元，亦可使用燈等以代替熱風槍。
如以上般進行，如圖6（B）所示，保護膠膜T會收縮並消除從晶圓W超出之超出部Tm。
＜剝離步驟＞ 如圖7所示，使已消除超出部Tm之晶圓W進行正反反轉，使保護膠膜T露出於上側，並黏貼於切割膠膜85。
此外，如圖7所示，切割膠膜85亦黏貼環狀的框架F，構成使晶圓W與框架F為一體之晶圓單元U，並以晶圓單元U的型態被處理。
然後，如圖8（A）所示，使用剝離膠膜90進行保護膠膜T的剝離。剝離膠膜90被配置成跨越晶圓W的外周緣，並藉由按壓機構92而被按壓於保護膠膜T。
此時，保護膠膜T雖與剝離膠膜90一起被按壓，但因藉由上述的收縮步驟而消除保護膠膜T從晶圓W的超出，故保護膠膜T不會黏貼於切割膠膜85。
然後，如圖8（B）所示，藉由剝離機構94拉起剝離膠膜90，藉此可使保護膠膜T從晶圓W剝離。
如此，藉由事先消除保護膠膜T從晶圓W的超出，而在使保護膠膜T剝離之過程中，保護膠膜T不會貼附於切割膠膜85，能順利地使保護膠膜T剝離。
1:研削裝置 10:保持台 20a:研削單元 20b:研削單元 23:研削輪 23a研削磨石 60:清洗單元 80:加熱單元 85:切割膠膜 90:剝離膠膜 D:元件 F:框架 M1:超出量 N:熱風 T:保護膠膜 Tm:超出部 U:晶圓單元 W:晶圓 Wa:正面 Wb:背面 Wm:倒角部
圖1係表示關於用於本發明的實施之研削裝置的構成例之立體圖。 圖2係被加工物亦即晶圓之背面側立體圖。 圖3係表示關於加工方法的程序之流程圖。 圖4（A）係表示關於已將保護膠膜黏貼於晶圓的狀態之局部剖面側面圖。圖4（B）係表示以保持台保持晶圓的狀態之局部剖面側面圖。 圖5（A）係表示研削步驟之局部剖面側面圖。圖5（B）係表示關於晶圓的薄化之剖面圖。圖5（C）係表示關於倒角部的其他形式之剖面圖。 圖6（A）係表示收縮步驟之剖面圖。圖6（B）係表示已藉由收縮消除超出部的狀態之剖面圖。 圖7係晶圓單元之立體圖。 圖8（A）係表示關於黏貼剝離膠膜的狀況之剖面圖。圖8（B）係關於保護膠膜的剝離之剖面圖。 圖9（A）係表示關於以往的保護膠膜的超出之剖面圖。圖9（B）係關於以往的剝離膠膜的黏著的狀況之剖面圖。
60:清洗單元
61:旋轉工作台
80:加熱單元
N:熱風
T:保護膠膜
Tm:超出部
W:晶圓
Wa:正面
Wb:背面
Wm:倒角部

Claims (3)

  1. 一種晶圓之加工方法，該晶圓已在外周形成倒角部，該晶圓之加工方法具備： 膠膜黏貼步驟，其在該晶圓的正面黏貼保護膠膜，且使該保護膠膜的直徑與該晶圓的直徑為相同直徑； 保持步驟，其透過該保護膠膜而以保持台保持該晶圓並使背面露出； 研削步驟，其以研削磨石研削被該保持台保持之該晶圓的該背面，以使該晶圓的厚度變得較原厚度的一半更薄之方式進行薄化，藉此將該晶圓的直徑縮徑，該保護膠膜從該晶圓超出，形成超出部；以及 收縮步驟，其在實施該研削步驟後，加熱該保護膠膜的該超出部使其收縮。
  2. 一種研削裝置，其將已在外周形成倒角部且已在正面黏貼與晶圓相同直徑的保護膠膜之晶圓進行研削，且具備： 保持台，其透過該保護膠膜而保持該晶圓； 研削單元，其具有將被該保持台保持之該晶圓進行研削之多個研削磨石；以及 加熱單元，其將該保護膠膜從該晶圓超出之超出部進行加熱使其收縮，所述超出部係藉由以該研削單元研削該晶圓並使該晶圓的厚度薄化一半以上而將該晶圓縮徑所形成。
  3. 如請求項2之研削裝置，其中，進一步具備：清洗單元，其清洗已被該研削單元研削之該晶圓， 該加熱單元將已被該清洗單元清洗之該晶圓的該保護膠膜的超出部進行加熱。
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