TW202213596A - 基板處理裝置之運用方法 - Google Patents

基板處理裝置之運用方法 Download PDF

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Publication number
TW202213596A
TW202213596A TW110118800A TW110118800A TW202213596A TW 202213596 A TW202213596 A TW 202213596A TW 110118800 A TW110118800 A TW 110118800A TW 110118800 A TW110118800 A TW 110118800A TW 202213596 A TW202213596 A TW 202213596A
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TW
Taiwan
Prior art keywords
substrate
inspection
processing
wafer
inspection substrate
Prior art date
Application number
TW110118800A
Other languages
English (en)
Chinese (zh)
Inventor
李水根
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202213596A publication Critical patent/TW202213596A/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW110118800A 2020-06-04 2021-05-25 基板處理裝置之運用方法 TW202213596A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020097773 2020-06-04
JP2020-097773 2020-06-04

Publications (1)

Publication Number Publication Date
TW202213596A true TW202213596A (zh) 2022-04-01

Family

ID=78830495

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110118800A TW202213596A (zh) 2020-06-04 2021-05-25 基板處理裝置之運用方法

Country Status (3)

Country Link
JP (1) JP7455972B2 (ja)
TW (1) TW202213596A (ja)
WO (1) WO2021246328A1 (ja)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6889568B2 (en) 2002-01-24 2005-05-10 Sensarray Corporation Process condition sensing wafer and data analysis system
US6828542B2 (en) 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
US6807503B2 (en) 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
DE10314150A1 (de) 2003-03-28 2004-10-21 Infineon Technologies Ag Verfahren und Messanordnung zur Erfassung von Umgebungs- und Prozessbedingungen in einer Fertigungsumgebung für Halbleiterwafer
JP2008032401A (ja) 2006-07-26 2008-02-14 Fujifilm Corp 赤外カットフィルタの検査方法及び装置
JP2014022578A (ja) 2012-07-19 2014-02-03 Tokyo Electron Ltd 処理液供給装置及び処理液供給方法
JP2016146440A (ja) 2015-02-09 2016-08-12 大日本印刷株式会社 液処理装置および液処理方法
US10067070B2 (en) 2015-11-06 2018-09-04 Applied Materials, Inc. Particle monitoring device
US20200343116A1 (en) 2016-10-22 2020-10-29 Matan LAPIDOT Mobile inspection system for the detection of defect occurrence and location

Also Published As

Publication number Publication date
WO2021246328A1 (ja) 2021-12-09
JPWO2021246328A1 (ja) 2021-12-09
JP7455972B2 (ja) 2024-03-26

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