TW202204592A - 製造電子機器之水溶液、光阻圖案之製造方法及裝置之製造方法 - Google Patents

製造電子機器之水溶液、光阻圖案之製造方法及裝置之製造方法 Download PDF

Info

Publication number
TW202204592A
TW202204592A TW110112122A TW110112122A TW202204592A TW 202204592 A TW202204592 A TW 202204592A TW 110112122 A TW110112122 A TW 110112122A TW 110112122 A TW110112122 A TW 110112122A TW 202204592 A TW202204592 A TW 202204592A
Authority
TW
Taiwan
Prior art keywords
aqueous solution
manufacturing
electronic equipment
photoresist pattern
photosensitive resin
Prior art date
Application number
TW110112122A
Other languages
English (en)
Chinese (zh)
Inventor
山本和磨
八嶋友康
石井牧
Original Assignee
德商默克專利有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商默克專利有限公司 filed Critical 德商默克專利有限公司
Publication of TW202204592A publication Critical patent/TW202204592A/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2079—Monocarboxylic acids-salts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2041—Dihydric alcohols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials For Photolithography (AREA)
TW110112122A 2020-04-06 2021-04-01 製造電子機器之水溶液、光阻圖案之製造方法及裝置之製造方法 TW202204592A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-068224 2020-04-06
JP2020068224A JP2021165771A (ja) 2020-04-06 2020-04-06 電子機器製造水溶液、レジストパターンの製造方法およびデバイスの製造方法

Publications (1)

Publication Number Publication Date
TW202204592A true TW202204592A (zh) 2022-02-01

Family

ID=75441868

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110112122A TW202204592A (zh) 2020-04-06 2021-04-01 製造電子機器之水溶液、光阻圖案之製造方法及裝置之製造方法

Country Status (8)

Country Link
US (1) US20230167383A1 (https=)
EP (1) EP4133333A1 (https=)
JP (3) JP2021165771A (https=)
KR (2) KR102753830B1 (https=)
CN (1) CN115398340A (https=)
IL (1) IL296997A (https=)
TW (1) TW202204592A (https=)
WO (1) WO2021204651A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021165771A (ja) * 2020-04-06 2021-10-14 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH 電子機器製造水溶液、レジストパターンの製造方法およびデバイスの製造方法
KR102832650B1 (ko) * 2021-01-29 2025-07-11 에스케이하이닉스 주식회사 신너 조성물 및 이를 이용한 반도체 기판의 표면 처리 방법
WO2023285408A2 (en) * 2021-07-15 2023-01-19 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
JP2025509041A (ja) * 2022-03-09 2025-04-11 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子機器製造液、レジストパターンの製造方法およびデバイスの製造方法
KR20250041030A (ko) 2022-07-22 2025-03-25 메르크 파텐트 게엠베하 현상액 내성 레지스트 하층막 조성물 및 레지스트 패턴 제조 방법
KR20250127318A (ko) * 2022-12-26 2025-08-26 메르크 파텐트 게엠베하 전자기기 제조 수용액, 레지스트 패턴의 제조 방법 및 디바이스의 제조 방법
KR20250137630A (ko) 2023-01-13 2025-09-18 메르크 파텐트 게엠베하 전자 기기 제조 수용액, 레지스트 패턴의 제조 방법 및 디바이스의 제조 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
EP0366590B2 (en) 1988-10-28 2001-03-21 International Business Machines Corporation Highly sensitive positive photoresist compositions
US6372415B1 (en) * 1997-10-30 2002-04-16 Kao Corporation Resist developer
JPH11249323A (ja) * 1998-03-05 1999-09-17 Kao Corp レジスト現像方法
JP4190364B2 (ja) * 2003-08-26 2008-12-03 東京応化工業株式会社 ホトリソグラフィー用リンス液および基板の処理方法
ATE527581T1 (de) * 2005-03-29 2011-10-15 Fujifilm Corp Verfahren zur herstellung einer lithografiedruckform
JP2007200944A (ja) * 2006-01-23 2007-08-09 Tokuyama Corp 基板洗浄液
JP2007254555A (ja) * 2006-03-22 2007-10-04 Sanyo Chem Ind Ltd 洗浄剤組成物
EP1854627A1 (en) * 2006-05-12 2007-11-14 Agfa Graphics N.V. Method for making a lithographic printing plate
JP5336306B2 (ja) 2008-10-20 2013-11-06 信越化学工業株式会社 レジスト下層膜形成方法、これを用いたパターン形成方法、及びレジスト下層膜材料
US20100105595A1 (en) * 2008-10-29 2010-04-29 Wai Mun Lee Composition comprising chelating agents containing amidoxime compounds
JP5624858B2 (ja) * 2009-11-20 2014-11-12 東京応化工業株式会社 パターン形成方法
JP2012060050A (ja) * 2010-09-13 2012-03-22 Fujifilm Corp 洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法
WO2012133597A1 (ja) * 2011-03-30 2012-10-04 Jsr株式会社 多層レジストプロセスパターン形成方法及び多層レジストプロセス用無機膜形成組成物
JP6240404B2 (ja) 2013-05-09 2017-11-29 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ リソグラフィー用リンス液およびそれを用いたパターン形成方法
JP2016031503A (ja) * 2014-07-30 2016-03-07 日立化成株式会社 導電パターンの形成方法、導電パターン基板及びタッチパネルセンサ
US10120277B2 (en) * 2016-02-19 2018-11-06 Jsr Corporation Radiation-sensitive composition and pattern-forming method
US10451974B2 (en) 2016-06-20 2019-10-22 Az Electronic Materials (Luxembourg) S.A.R.L. Rinse composition, a method for forming resist patterns and a method for making semiconductor devices
KR102791311B1 (ko) * 2016-08-12 2025-04-04 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
EP3545361A1 (en) 2016-11-25 2019-10-02 Ridgefield Acquisition A lithography composition, a method for forming resist patterns and a method for making semiconductor devices
WO2019026885A1 (ja) * 2017-08-04 2019-02-07 Jsr株式会社 パターン形成方法及び処理液
CN107499016A (zh) * 2017-09-25 2017-12-22 浙江康尔达新材料股份有限公司 一种热敏阴图平版印刷版前体及其制版方法
WO2019181387A1 (ja) * 2018-03-22 2019-09-26 富士フイルム株式会社 ろ過装置、精製装置、薬液の製造方法
JP7274919B2 (ja) * 2019-04-11 2023-05-17 東京応化工業株式会社 洗浄液、及び金属レジストを備えた支持体の洗浄方法
JP2021165771A (ja) * 2020-04-06 2021-10-14 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH 電子機器製造水溶液、レジストパターンの製造方法およびデバイスの製造方法

Also Published As

Publication number Publication date
EP4133333A1 (en) 2023-02-15
JP7520137B2 (ja) 2024-07-22
CN115398340A (zh) 2022-11-25
JP2023519537A (ja) 2023-05-11
KR20220164776A (ko) 2022-12-13
WO2021204651A1 (en) 2021-10-14
US20230167383A1 (en) 2023-06-01
KR102753830B1 (ko) 2025-01-14
JP7747825B2 (ja) 2025-10-01
JP2024123146A (ja) 2024-09-10
KR20250010142A (ko) 2025-01-20
IL296997A (en) 2022-12-01
JP2021165771A (ja) 2021-10-14

Similar Documents

Publication Publication Date Title
JP7520137B2 (ja) 電子機器製造水溶液、レジストパターンの製造方法およびデバイスの製造方法
TWI596207B (zh) 微影用沖洗液及使用其之圖案形成方法
TWI800500B (zh) 阻劑圖案的製造方法及半導體的製造方法
TW202342709A (zh) 電子設備製造液、光阻圖案之製造方法及裝置之製造方法
TW202319530A (zh) 電子設備製造用水溶液、光阻圖案之製造方法及裝置之製造方法
JP7411702B2 (ja) 半導体水溶性組成物およびその使用
TW202436613A (zh) 製造電子機器之水溶液、光阻圖案之製造方法及元件之製造方法
TW202436609A (zh) 製造電子機器之水溶液、光阻圖案之製造方法及元件之製造方法