TW202201621A - Substrate mounting method and substrate mounting mechanism capable of suppressing deformation of the substrate - Google Patents
Substrate mounting method and substrate mounting mechanism capable of suppressing deformation of the substrate Download PDFInfo
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- TW202201621A TW202201621A TW110115491A TW110115491A TW202201621A TW 202201621 A TW202201621 A TW 202201621A TW 110115491 A TW110115491 A TW 110115491A TW 110115491 A TW110115491 A TW 110115491A TW 202201621 A TW202201621 A TW 202201621A
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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Abstract
Description
本揭露係關於一種基板載置方法及基板載置機構。 The present disclosure relates to a substrate mounting method and a substrate mounting mechanism.
專利文獻1係揭露一種基板收授方法,係將基板收授至載置台,該載置台係設置在會對具有可撓性之該基板進行電漿處理的處理腔室內且具備會藉由靜電吸附來吸附該基板的靜電吸盤;該載置台係具備:基板載置面,係載置該基板;第1昇降銷,係可相對於該基板載置面而出沒,且支撐該基板的周緣部;以及第2昇降銷,係可相對於該基板載置面而出沒,且支撐該基板的中央部;該基板收授方法係包含:會使被該第1昇降銷及位於較該第1昇降銷要低之位置的第2昇降銷而支撐在該基板載置面上方之該基板下降,且使該基板從該基板的中央部起載置於該基板載置面的基板載置工序;會藉由該靜電吸盤來吸附載置於該基板載置面的該基板,且對該基板進行電漿處理的工序;以及會在該電漿處理結束後解除該靜電吸盤所致之吸附,且使該第1昇降銷及該第2昇降銷位於相同高度來支撐該基板以使該基板從該基板載置面脫離的基板脫離工序。
專利文獻1:日本特開2013-33847號公報 Patent Document 1: Japanese Patent Laid-Open No. 2013-33847
在一個面向中,本揭露係提供一種將具有可撓性之基板載置於載置台時抑制基板變形的基板載置方法及基板載置機構。 In one aspect, the present disclosure provides a substrate placement method and a substrate placement mechanism for suppressing deformation of a substrate when a flexible substrate is placed on a placement table.
為了解決上述課題,根據一樣態所提供之一種基板載置方法,係將基板載置於載置台,該載置台係具有會載置具有可撓性而為矩形狀之該基板的載置面;該載置面係具有對應於該基板的載置區域;該載置台係具備:第1昇降銷,係可出沒地設在該載置區域的角部;第2昇降銷,係可出沒地設在該載置區域的短邊中央部;第3昇降銷,係可出沒地設在該載置區域的長邊中央部;以及第4昇降銷,係可出沒地設在該載置區域的面中央部;該基板載置方法係具有:至少在該第4昇降銷較該第3昇降銷要高且該第2昇降銷較該第4昇降銷要高的狀態下,藉由該第1至第4昇降銷來支撐該基板的工序;以及在支撐該基板的工序之後,將該第1至第4昇降銷收納於該載置台以將該基板載置於該載置區域的工序;將該基板載置於該載置區域的工序係至少先將該基板的長邊中央部載置於該載置面,接著將該基板的面中央部載置於該載置面,再將該基板的短邊中央部載置於該載置面。 In order to solve the above-mentioned problems, according to one aspect, a substrate mounting method is provided, wherein the substrate is mounted on a mounting table, the mounting table having a mounting surface on which the flexible and rectangular substrate is mounted; The mounting surface has a mounting area corresponding to the substrate; the mounting table is provided with: a first lift pin, which is provided in a corner of the mounting region so as to be in and out; and a second lift pin, which is provided in a retractable manner In the center of the short side of the placement area; a third lift pin is provided in the central part of the long side of the placement area so as to be in and out; and the fourth lift pin is provided in the surface of the placement area in a retractable manner a central part; the substrate mounting method comprises: at least in a state where the fourth lift pin is higher than the third lift pin and the second lift pin is higher than the fourth lift pin, by the first to a step of supporting the substrate by a fourth lift pin; and a step of accommodating the first to fourth lift pins in the mounting table to mount the substrate on the mounting area after the step of supporting the substrate; The step of placing the substrate on the placing area is to first place at least the central portion of the long side of the substrate on the placing surface, then place the central portion of the surface of the substrate on the placing surface, and then place the central portion of the substrate on the placing surface. The short-side central portion is placed on the placement surface.
根據一個面向,便可提供一種將具有可撓性之基板載置於載置台時抑制基板變形的基板載置方法及基板載置機構。 According to one aspect, it is possible to provide a substrate mounting method and a substrate mounting mechanism for suppressing deformation of the substrate when the flexible substrate is mounted on the mounting table.
G:基板 G: substrate
1:基板處理裝置 1: Substrate processing device
2:腔室 2: Chamber
4:基座(載置台) 4: Pedestal (mounting table)
4a:基材 4a: Substrate
4b:絕緣構件 4b: Insulating member
4c:基板載置面(載置面) 4c: Substrate mounting surface (mounting surface)
4d:載置區域 4d: Placement area
4e,4f:中心線 4e, 4f: Centerline
7,7a~7d:插通孔 7,7a~7d: through hole
8:昇降銷 8: Lifting pin
8a:昇降銷(第1昇降銷) 8a: Lift pin (1st lift pin)
8b:昇降銷(第2昇降銷) 8b: Lift pin (2nd lift pin)
8c:昇降銷(第3昇降銷) 8c: Lift pin (3rd lift pin)
8d:昇降銷(第4昇降銷) 8d: Lift pin (4th lift pin)
9a~9d:驅動部 9a~9d: Drive section
31:控制器 31: Controller
40:靜電吸盤 40: Electrostatic chuck
圖1係基板處理裝置之概略剖面圖的一例。 FIG. 1 is an example of a schematic cross-sectional view of a substrate processing apparatus.
圖2係基板處理裝置的平面方向之概略剖面圖的一例。 FIG. 2 is an example of a schematic cross-sectional view in the plane direction of the substrate processing apparatus.
圖3係顯示會驅動昇降銷的驅動機構構成之方塊圖的一例。 FIG. 3 is an example of a block diagram showing the configuration of a drive mechanism that drives the lift pins.
圖4係說明基板處理裝置的基板收授動作之一例的流程圖。 4 is a flowchart illustrating an example of a substrate receiving and receiving operation of the substrate processing apparatus.
圖5係顯示基板處理裝置的基板收授動作時之昇降銷的動作之一例的時序圖。 5 is a timing chart showing an example of the movement of the lift pins during the substrate receiving and receiving operation of the substrate processing apparatus.
圖6係被收授至昇降銷時之基板的剖面概念圖之一例。 FIG. 6 is an example of a cross-sectional conceptual diagram of the substrate when it is received and transferred to the lift pins.
圖7係說明基板撓曲之一例的圖。 FIG. 7 is a diagram illustrating an example of substrate deflection.
以下,參照圖式來說明用以實施本揭露的形態。各圖式中會有對相同構成部分賦予相同符號以省略重複說明的情形。 Hereinafter, a form for implementing the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals may be assigned to the same components to omit overlapping descriptions.
<基板處理裝置> <Substrate processing apparatus>
使用圖1至圖3來說明本實施形態之基板處理裝置1。圖1係基板處理裝置1之概略剖面圖的一例。基板處理裝置1係會將基板G載置於載置台且對基板G施予所欲處理(例如蝕刻處理等)的裝置。另外,載置台係構成為可調整(例如,冷卻)所載置之基板G的溫度。此外,係將水平方向作為X方向,水平且與X方向正交之方向作為Y方向,高度方向則作為Z方向來進行說明。
The
另外,在基板處理裝置1中被施予處理的基板G,換句話說被載置於載置台的基板G係俯視時為矩形且具有可撓性的基板。基板G例如也可以為具有可撓性的矩形狀玻璃基板。另外,基板G例如也可以是厚度為0.2mm至數mm左右的薄膜玻璃基板。另外,基板G例如也可以平面尺寸至少包含第6代的1500mm×1800mm左右的尺寸到第10.5代的3000mm×3400mm左右的尺寸。
In addition, the substrate G to be processed in the
基板處理裝置1係具備會收納基板G而作為處理容器的腔室2。腔室2係例如由表面被陽極處理(陽極氧化處理)後的鋁所構成,會對應於基板G的形狀而形成為四角筒狀。
The
腔室2內的底壁係設有會載置基板G而作為載置台的基座4。基座4係對應於基板G的形狀而形成為四角板狀或柱狀。基座4係具有金屬等導電性材料所構成的基材4a、及設在基材4a底部與腔室2底面之間的絕緣構件4b。基材4a
係連接有用以供給高頻電力的供電線23。供電線23係透過匹配器24而連接於高頻電源25。高頻電源25例如會將13.56MHz的高頻電力施加於基座4。匹配器24會使高頻電源25的輸出阻抗與負荷側的輸入阻抗加以匹配。藉此,基座4的構成便會具有下部電極的功能。
The bottom wall in the
另外,基座4係設有會藉由靜電吸附來吸附所載置之基板G的靜電吸盤40。靜電吸盤40係設在基板4a上部。靜電吸盤40係具有介電體41及設在介電體41內部的內部電極42。內部電極42係連接有用以施加電壓的供電線43。供電線43係透過開關44而連接於電源45。電源45會將電壓施加於內部電極42。開關44會使電壓的施加導通/斷開。
In addition, the
另外,基座4(靜電吸盤40)上面會成為載置基板G的基板載置面4c。此外,基板載置面4c係具有會與基板G內面之外周部相接的外緣部(未圖示)及形成在外緣部內側的凹入部(未圖示)。另外,凹入部係構成為可供給He氣等的導熱氣體。藉由靜電吸盤40來靜電吸附基板G,基板G內面之外周部與基板載置面4c的外緣部便會被氣密吸附。另外,藉由將He氣供給至在基板G內面與基板載置面4c的凹入部之間形成為間隙的空間,便能夠構成為可冷卻(調整溫度)基座4所載置的基板G。另外,也可以在凹入部設置多個微小凸部,藉由外緣部與凸部來支撐基板G。
In addition, the upper surface of the susceptor 4 (the electrostatic chuck 40 ) becomes the
腔室2的上部或上壁係以會與基座4對向的方式來設置有會將處理氣體供給至腔室2內且具有上部電極的功能之噴淋頭11。噴淋頭11係在內部形成有會使處理氣體擴散的氣體擴散空間12,且在下面或與基座4的對向面形成有會噴出處理氣體的多個噴出孔13。該噴淋頭11係接地,且會與基座4一同構成一對平行平板電極。此外,本實施形態雖是說明將本揭露適用於藉由平行平板電
極來產生電漿之基板處理裝置的情形,但也可以將本揭露適用於藉由感應耦合來產生電漿之基板處理裝置,另外當然也可以將本揭露適用於藉由其他方法來產生電漿之基板處理裝置。
The upper part or the upper wall of the
噴淋頭11上面係設有氣體導入口14,該氣體導入口14係連接有處理氣體供給管15,該處理氣體供給管15係透過閥件16及質流控制器17而連接有處理氣體供給源18。從處理氣體供給源18會供給例如用以蝕刻的處理氣體。作為處理氣體係可使用鹵系氣體、O2氣、Ar氣等一般本領域中所使用的氣體。
The upper surface of the
腔室2底壁係連接有排氣管19,該排氣管19係連接有排氣裝置20。排氣裝置20係具備渦輪分子泵等的真空泵,藉此便可構成為能將腔室2內抽真空至既定減壓環境氣氛。腔室2側壁係形成有用以搬出入基板G的搬出入口21且設有會開閉該搬出入口21的閘閥22,在搬出入口21開啟時,基板G會在被作為搬送構件之搬送臂50(參照後述圖2)從下方支撐的狀態下來在與透過搬出入口21及閘閥22相鄰而未圖示的搬送室之間被加以搬送。
An
腔室2的底壁及基座4中,係會於基座4的外周部位置及中央部位置(較外周部位置要內側或接近中央的位置)分別形成有將該等貫通的插通孔7。插通孔7內係分別可相對於基座4的基板載置面4c出沒地插入有會從下方支撐基板G並使其昇降的昇降銷8。昇降銷8係分別設成會在突出時抵接於基板G的外周部及中央部,且藉由未圖示的定位用軸套在徑向或寬度方向被定位的狀態下插入於插通孔7內。
In the bottom wall of the
昇降銷8的下部會突出於腔室2外側。昇降銷8的下部係形成有凸緣26,凸緣26係連接有設成圍繞昇降銷8而可伸縮的波紋管27一端部(下端部),該波紋管27另一端部(上端部)則連接於腔室2底壁。或者,也可以將該波紋管27
另一端部(上端部)連接於基座4底壁。藉此,波紋管27便會追隨昇降銷8的昇降而伸縮,且將插通孔7與昇降銷8的間隙加以密封。
The lower part of the
此處,使用圖2進一步說明插通孔7及昇降銷8的配置。圖2係基板處理裝置1的平面方向之概略剖面圖的一例。此外,圖2中係以二點鏈線來表示搬送臂50所保持之基板G配置在載置區域4d上方時的搬送臂50及基板G的位置。
Here, the arrangement of the insertion holes 7 and the lift pins 8 will be further described with reference to FIG. 2 . FIG. 2 is an example of a schematic cross-sectional view of the
如圖2所示,基板G及載置有基板G之基座4的基板載置面4c在俯視時係呈現會具有短邊(Y方向)及長邊(X方向)的矩形狀。另外,基板載置面4c係具有對應於基板G的載置區域4d(圖2中係以虛線來表示)。將基板G載置於基座4時,基板G會被載置於載置區域4d。此外,圖2中係以一點鏈線來表示載置區域4d的中心線4e(連結一側長邊的中點與另一側長邊的中點之線)及中心線4f(連結一側短邊的中點與另一側短邊的中點之線)。另外,圖2中,雖然方便上係將表示載置區域4d的虛線描繪在較表示基板G的二點鏈線要內側,但並非意味著載置區域4d會被限定在較基板G外周要內側,而是希望載置區域4d會與基板G形狀相同且具有相同面積。另外,載置區域4d也可以是具有將基板G包在內之形狀及面積的區域。
As shown in FIG. 2, the board|substrate G and the board|
基座4係具有插通孔7a~7d來作為插通孔7。插通孔7a~7c係設在載置區域4d的外周部。插通孔7d係設在被載置區域4d的外周部所圍繞之載置區域4d的面中央部。插通孔7a~7d係配置有昇降銷8a~8d來作為昇降銷8。
The
矩形狀載置區域4d的角部係設有插通孔7a。圖2所示之範例中,插通孔7a係以中心線4e及中心線4f作為對稱軸而在載置區域4d內設有4個。各插通孔7a係分別配置有昇降銷8a。以下,將4個昇降銷8a稱為第1群組Gr.1。
The corners of the rectangular mounting
矩形狀載置區域4d的短邊中央部(以中心線4f作為對稱軸的左右(Y方向)2個角部之間)係設有插通孔7b。圖2所示之範例中,一側的短邊中央部係以中心線4f作為對稱軸而設有2個插通孔7b。同樣地,另一側的短邊中央部係以中心線4f作為對稱軸而設有2個插通孔7b。載置區域4d內係設有4個插通孔7b。各插通孔7b係分別配置有昇降銷8b。以下,將4個昇降銷8b稱為第2群組Gr.2。
The
矩形狀載置區域4d的長邊中央部(以中心線4e作為對稱軸的前後(X方向)2個角部之間)係設有插通孔7c。圖2所示之範例中,一側的長邊中央部係在中心線4e上設有插通孔7c。同樣地,另一側的長邊中央部係在中心線4e上設有插通孔7c。載置區域4d內係設有2個插通孔7c。各插通孔7c係分別配置有昇降銷8c。以下,將2個昇降銷8c稱為第3群組Gr.3。
The insertion hole 7c is provided in the center part of the long sides of the
矩形狀載置區域4d之中央附近的面中央部係設有插通孔7d。圖2所示之範例中,插通孔7d係設在中心線4e上且以中心線4f作為對稱軸而設有2個。各插通孔7d係分別配置有昇降銷8d。以下,將2個昇降銷8d稱為第4群組Gr.4。
A
圖3係顯示會驅動昇降銷8a~8d的驅動機構構成之方塊圖的一例。 FIG. 3 is an example of a block diagram showing the configuration of a drive mechanism that drives the lift pins 8a to 8d.
昇降銷8a~8d係分別連接於驅動部9a~9d。昇降銷8a~8d係構成為會藉由該驅動部9a~9d的驅動來昇降而相對於基座4的基板載置面4c突出及沒入。驅動部9a~9d係分別例如使用步進馬達來構成。此外,如圖3所示,雖是說明昇降銷8a~8d係構成為可個別地加以驅動,但並不限於此,也可以是構成為可對每一群組(第1群組Gr.1~第4群組Gr.4)分別加以驅動。根據此構成,便可削減驅動部(步進馬達)的數量。
The lift pins 8a to 8d are connected to the
驅動部9a~9d的驅動係藉由具備微處理器(電腦)的控制器31來個別地加以控制的構成,藉此,昇降銷8a~8d便構成為可彼此獨立地昇降。控制器
31係連接有使用者介面32及記憶部33,該使用者介面32係由進行指令的輸入操作等以使工序管理者來管理驅動部9a~9d的驅動之鍵盤或將驅動部9a~9d的驅動狀況可視化來加以顯示之顯示器等所構成,該記憶部33儲存有資料庫,係記錄有在控制器31的控制下來實現驅動部9a~9d的驅動之控制程式或驅動條件資料等。此外,視需求而藉由以來自使用者介面32的指示等從記憶部33呼叫出任意資料庫並使控制器31來加以執行,便可在控制器31的控制下來進行驅動部9a~9d的驅動及停止。該資料庫係例如可利用CD-ROM、硬碟、快閃記憶體等電腦可讀取之記憶媒體所儲存之狀態者,或者也可以從其他裝置透過例如專用線路來隨時傳送而加以利用。
The drive systems of the
控制器31、使用者介面32及記憶部33係構成會控制驅動部9a~9d所致之昇降銷8a~8d的昇降之控制部,基座4、昇降銷8a~8d、驅動部9a~9d及控制部則構成基板載置機構。
The
接著,使用圖4及圖5來說明將基板處理裝置1中的基板G收授至基座4的基板收授方法(載置方法)。
Next, the board|substrate transfer method (mounting method) which transfers the board|substrate G in the board|
圖4係說明基板處理裝置1的基板收授動作之一例的流程圖。圖5係顯示基板處理裝置1的基板收授動作時之昇降銷8的動作之一例的時序圖。
FIG. 4 is a flowchart illustrating an example of the substrate receiving and receiving operation of the
步驟S101中,會將搬送臂50所保持之基板G收授至昇降銷8a~8d。具體來說,控制器31會使閘閥22開啟。接著,控制器31會控制搬送臂50,將保持有基板G之搬送臂50從搬出入口21插入至腔室2內以使基板G搬送至基座4上方。接著,控制器31會控制驅動部9a~9d來使昇降銷8a~8d突出成較搬送臂50要高。藉此,基板G便會從搬送臂50收授至昇降銷8a~8d。此外,如圖2所示,昇降
銷8a~8d係配置成不會與搬送臂51接觸。接著,控制器31會控制搬送臂50,使搬送臂50從搬出入口21退出。接著,控制器31會關閉閘閥22。
In step S101, the substrate G held by the
此處,如圖5所示,支撐基板G之昇降銷8a~8d的高度係以「第3群組Gr.3之昇降銷8c的高度<第4群組Gr.4之昇降銷8d的高度<第2群組Gr.2之昇降銷8b的高度<第1群組Gr.1之昇降銷8a的高度」的方式來加以偏移。
Here, as shown in FIG. 5 , the heights of the lift pins 8a to 8d supporting the substrate G are defined as “the height of the lift pins 8c of the third group Gr.3<the height of the lift pins 8d of the fourth group Gr.4 <The height of the
此外,昇降銷8a~8d也可以先在較搬送臂50要下側形成昇降銷8a~8d間的偏移關係後,再使昇降銷8a~8d整批地上昇。藉此,便會以第1群組Gr.1之昇降銷8a、第2群組Gr.2之昇降銷8b、第4群組Gr.4之昇降銷8d、第3群組Gr.3之昇降銷8c的順序來接觸於基板G。
In addition, the lift pins 8a to 8d may be moved upward in a batch after forming an offset relationship between the lift pins 8a to 8d on the lower side of the conveying
另外,也可以使昇降銷8a~8d同時上昇,藉由分別停止在既定高度來形成昇降銷8a~8d間的偏移關係後,再將基板G從搬送臂50收授至昇降銷8a~8d。藉此,第1群組Gr.1之昇降銷8a、第2群組Gr.2之昇降銷8b、第3群組Gr.3之昇降銷8c、第4群組Gr.4之昇降銷8d便會同時接觸於基板G,接著再上昇。接著,便會以第3群組Gr.3之昇降銷8c、第4群組Gr.4之昇降銷8d、第2群組Gr.2之昇降銷8b、第1群組Gr.1之昇降銷8a的順序來停止。
Alternatively, the lift pins 8a to 8d may be raised at the same time, and the offset relationship between the lift pins 8a to 8d may be formed by stopping at predetermined heights, respectively, and then the substrate G may be transferred from the
此處,使用圖6來說明被收授至昇降銷8a~8d時之基板G的形狀。圖6係被收授至昇降銷8a~8d時之基板G的剖面概念圖之一例。圖6(A)係從短邊側來觀看基板G的圖,圖6(B)則係從長邊側來觀看基板G的圖。此外,圖6中係誇大地圖示出基板G的撓曲。 Here, the shape of the board|substrate G when it is conveyed to the lift pins 8a-8d is demonstrated using FIG. 6. FIG. FIG. 6 is an example of a conceptual cross-sectional view of the substrate G when it is received and received to the lift pins 8a to 8d. FIG.6(A) is the figure which looked at the board|substrate G from the short side, and FIG.6(B) is the figure which looked at the board|substrate G from the long side. In addition, in FIG. 6, the deflection of the board|substrate G is shown exaggeratedly.
圖6(A)之剖面概念圖201係基板G之A-A剖面(參照圖2)示意圖。A-A剖面中,基板G係使被支撐成第3群組Gr.3之昇降銷8c所支撐的基板G之長邊中央部會較第4群組Gr.4之昇降銷8d所支撐的基板G之面中央部要低。換句話 說,基板G係以在連結基板G一側長邊的長邊中央部與基板G另一側長邊的長邊中央部之線上,使面中央部會較長邊中央部要高的形狀來被支撐在昇降銷8。 The cross-sectional conceptual diagram 201 of FIG. 6(A) is a schematic diagram of the A-A cross-section of the substrate G (refer to FIG. 2 ). In the AA section, the substrate G is supported so that the center of the long side of the substrate G supported by the lift pins 8c of the third group Gr.3 is higher than the substrate G supported by the lift pins 8d of the fourth group Gr.4 The central part of the face should be lower. In other words That is to say, the substrate G is formed in such a shape that the central portion of the surface is higher than the central portion of the longer side on the line connecting the central portion of the long side of the long side of the substrate G and the central portion of the long side of the long side of the substrate G. are supported on lift pins 8 .
圖6(A)之剖面概念圖202係基板G之B-B剖面(參照圖2)示意圖。B-B剖面中,基板G係使被支撐成第2群組Gr.2之昇降銷8b所支撐的基板G之短邊中央部會較第1群組Gr.1之昇降銷8a所支撐的基板G之角部要低。換句話說,基板G係以基板G外周側的短邊會從短邊中央部朝向角部變高的形狀來被支撐在昇降銷8。 The cross-sectional conceptual diagram 202 of FIG. 6(A) is a schematic diagram of the B-B cross-section of the substrate G (refer to FIG. 2 ). In the BB section, the board G is supported so that the short-side central portion of the board G supported by the lift pins 8b of the second group Gr.2 is higher than the board G supported by the lift pins 8a of the first group Gr.1 The corners should be lower. In other words, the substrate G is supported by the lift pins 8 in such a shape that the short side of the outer peripheral side of the substrate G becomes higher from the center portion of the short side toward the corner portion.
圖6(B)之剖面概念圖203係基板G之C-C剖面(參照圖2)示意圖。C-C剖面中,基板G係使被支撐成第3群組Gr.3之昇降銷8c所支撐的基板G之長邊中央部會較第1群組Gr.1之昇降銷8a所支撐的基板G之角部要低。換句話說,基板G係以基板G外周側的長邊會從長邊中央部朝向角部變高的形狀來被支撐在昇降銷8。 The cross-sectional conceptual diagram 203 of FIG. 6(B) is a schematic diagram of the C-C cross-section of the substrate G (refer to FIG. 2 ). In the CC section, the board G is supported so that the center of the long side of the board G supported by the lift pins 8c of the third group Gr.3 is higher than the board G supported by the lift pins 8a of the first group Gr.1 The corners should be lower. In other words, the substrate G is supported by the lift pins 8 in such a shape that the long sides on the outer peripheral side of the substrate G become higher from the center of the long sides toward the corners.
圖6(B)之剖面概念圖204係基板G之D-D剖面(參照圖2)示意圖。D-D剖面中,基板G係使被支撐成第4群組Gr.4之昇降銷8d所支撐的基板G之面中央部會較第2群組Gr.2之昇降銷8b所支撐的基板G之短邊中央部要低。換句話說,基板G係以在連結基板G一側短邊的短邊中央部與基板G另一側短邊的短邊中央部之線上,是會從面中央部朝向短邊中央部變高的形狀來被支撐在昇降銷8。 The cross-sectional conceptual diagram 204 of FIG. 6(B) is a schematic diagram of the D-D cross-section of the substrate G (refer to FIG. 2 ). In the DD section, the substrate G is supported so that the center portion of the surface of the substrate G supported by the lift pins 8d of the fourth group Gr.4 is higher than the substrate G supported by the lift pins 8b of the second group Gr.2. The center of the short side should be lower. In other words, the substrate G is on a line connecting the short-side central portion of the short side of the substrate G and the short-side central portion of the other short side of the substrate G, and the height from the surface central portion toward the short-side central portion is increased. The shape comes to be supported on the lift pins 8.
返回圖4,步驟S102中,控制器31會控制驅動部9a~9d來使昇降銷8a~8d下降。此處,如圖6所示,控制器31會在維持昇降銷8a~8d之高度偏移的情況下來使昇降銷8a~8d下降。接著,步驟S103中,會根據昇降銷8a~8d之高度偏
移量的不同來將第3群組Gr.3之昇降銷8c收納在插通孔7c。藉此,基板G之長邊中央部便會先被載置在基座4的基板載置面4c。
Returning to FIG. 4 , in step S102, the
步驟S104中,控制器31會控制驅動部9d來使昇降銷8d下降。昇降銷8a及昇降銷8b在此時會停止在步驟S103時的高度。此外,昇降銷8c會收納在插通孔7c而停止在步驟S103時的高度。接著,步驟S105中,會將第4群組Gr.4之昇降銷8d收納在插通孔7d。藉此,基板G之面中央部便會第2順位地被載置在基座4的基板載置面4c。
In step S104, the
步驟S106中,控制器31會控制驅動部9a,9b來使昇降銷8a,8b下降。此處,如圖6所示,控制器31會在維持昇降銷8a,8b之高度偏移的情況下來使昇降銷8a,8b下降。此外,昇降銷8c,8d分別會收納在插通孔7c,7d而停止在步驟S105時的高度。接著,步驟S107中,會根據昇降銷8a,8b之高度偏移量的不同來將第2群組Gr.2之昇降銷8b收納在插通孔7b。藉此,基板G之短邊中央部便會第3順位地被載置在基座4的基板載置面4c。
In step S106, the
步驟S108中,控制器31會控制驅動部9a來使昇降銷8a下降。此外,昇降銷8b~8d分別會收納在插通孔7b~7d而停止在步驟S107時的高度。接著,步驟S109中,會將第1群組Gr.1之昇降銷8a收納在插通孔7a。藉此,基板G之角部便會最後地被載置在基座4的基板載置面4c。
In step S108, the
圖7係說明基板G撓曲之一例的圖。圖7中的上段係以等高線與等高線間的濃淡來顯示基板G被中心線4e及中心線4f分割後的四分之一區域中之基板G的撓曲。此處,左下係基板G的中央(Center)。亦即,右上係對應於基板G的角部,左上係對應於基板G的短邊中央部,右下係對應於基板G的長邊中央部,左下係對應於基板G的面中央部。另外,基板G的撓曲係以昇降銷8a的高度
為基準(0),越往下方撓曲越濃(點越密集),越往上方則撓曲越淡(點越稀疏)來加以圖示。另外,圖7中的下段係以示意方式來顯示A-A剖面下各狀態中之基板G的狀態。
FIG. 7 is a diagram illustrating an example of the deflection of the substrate G. FIG. The upper part in FIG. 7 shows the deflection of the substrate G in a quarter area divided by the center line 4e and the
另外,圖7(A)係顯示基板G被收授至昇降銷8的狀態(參照步驟S101)。圖7(B)係顯示基板G的長邊中央部被載置於基板載置面4c的狀態(參照步驟S103)。圖7(C)係顯示基板G的面中央部被載置於基板載置面4c的狀態(參照步驟S105)。
In addition, FIG. 7(A) shows the state in which the board|substrate G is conveyed to the lift pins 8 (refer to step S101). FIG.7(B) shows the state which the center part of the long side of the board|substrate G is mounted on the board|
步驟S101中,會以「第3群組Gr.3之昇降銷8c的高度<第4群組Gr.4之昇降銷8d的高度<第2群組Gr.2之昇降銷8b的高度<第1群組Gr.1之昇降銷8a的高度」的方式來偏移而支撐基板G。藉此,便如圖7(A)所示,基板G會被保持在「基板G之長邊中央部的高度<基板G之面中央部的高度<基板G之短邊中央部的高度<基板G之角部的高度」般撓曲的狀態。
In step S101, the value of "the height of the
步驟S103中,會先載置基板G之長邊中央部301。在此狀態下,如圖7(B)所示,基板G之面中央部會浮起。
In step S103, the
步驟S104中,會在停止第1群組Gr.1之昇降銷8a及第2群組Gr.2之昇降銷8b的情況下來使第4群組Gr.4之昇降銷8d下降。藉此,便如圖7(C)所示,能解除基板G之面中央部302的浮起而載置基板G之面中央部302。藉此,便能夠沿著通過基板G長邊中央的中心線4e(參照圖2)來將基板G載置於基座4。
In step S104, the lift pins 8d of the fourth group Gr.4 are lowered while the lift pins 8a of the first group Gr.1 and the lift pins 8b of the second group Gr.2 are stopped. Thereby, as shown in FIG.7(C), the floating of the
之後,藉由以基板G之短邊中央部、基板G之角部的順序來載置於基座4,便能夠防止基板G呈凸狀變形地被加以載置的情形。
After that, by placing the substrate G on the
以上,根據具有本實施形態相關之基板載置機構的基板處理裝置1,在將基板G載置於基座4時,藉由先將會有凸狀變形之虞的基板G之長邊中央
部載置於基座4,便能夠抑制基板G之長邊中央部的凸狀變形。另外,藉由相較於基板G之角部先來設置基板G之短邊中央部,便能夠抑制基板G之短邊中央部的凸狀變形。藉此,基板G內面的外周部與基座4之基板載置面4c的外緣部便會氣密吸附。藉此,在將He氣供給至基板G內面與基板載置面4c的凹入部之間時,便可防止產生He氣的洩漏。
As described above, according to the
另外,在將基板G之面中央部載置於基座4時,會在停止第1群組Gr.1之昇降銷8a及第2群組Gr.2之昇降銷8b的情況下來使第4群組Gr.4之昇降銷8d下降。藉此,便可在抑制基板G之面中央部的凸狀變形之情況下來將基板G載置於基座4。藉此,便可防止基板G內面與基板載置面4c的凹入部之間的空間容積增大。
In addition, when the center part of the surface of the substrate G is placed on the
以上,雖已說明基板處理裝置1,但本揭露並不限於上述實施形態等,可在申請專利範圍所記載之本揭露要旨的範疇內來進行各種變形、改良。
Although the
S101:將基板收授至昇降銷,配置銷(Gr.3<Gr.4<Gr.2<Gr.1) S101: Transfer the substrate to the lift pins, and configure the pins (Gr.3<Gr.4<Gr.2<Gr.1)
S102:Gr.1~Gr.4下降 S102: Gr.1~Gr.4 drop
S103:Gr.3完成收納(載置長邊中央部) S103: Gr.3 storage completed (placed in the center of the long side)
S104:只有Gr.4下降 S104: Only Gr.4 drops
S105:Gr.4完成收納(載置面中央部) S105: Gr.4 storage completed (central part of the mounting surface)
S106:Gr.1,Gr.2下降 S106: Gr.1, Gr.2 drop
S107:Gr.2完成收納(載置短邊中央部) S107: Gr.2 completed storage (placed at the center of the short side)
S108:Gr.1下降 S108: Gr.1 drop
S109:Gr.1完成收納(載置角部) S109: Gr.1 completed storage (placement corner)
Claims (5)
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JP3881062B2 (en) * | 1996-08-14 | 2007-02-14 | 大日本スクリーン製造株式会社 | Substrate holding mechanism and substrate processing apparatus |
JP2000277587A (en) | 1999-03-29 | 2000-10-06 | Kokusai Electric Co Ltd | Substrate carrying system |
KR20050001621A (en) * | 2003-06-26 | 2005-01-07 | 주성엔지니어링(주) | Method of Arranging Support Pins for Substrate |
JP4080401B2 (en) | 2003-09-05 | 2008-04-23 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
US20060005770A1 (en) | 2004-07-09 | 2006-01-12 | Robin Tiner | Independently moving substrate supports |
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JP2008087890A (en) | 2006-09-29 | 2008-04-17 | Fujifilm Corp | Substrate conveyance method and device |
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US10522385B2 (en) | 2017-09-26 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer table with dynamic support pins |
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