TW202201621A - Substrate mounting method and substrate mounting mechanism capable of suppressing deformation of the substrate - Google Patents

Substrate mounting method and substrate mounting mechanism capable of suppressing deformation of the substrate Download PDF

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TW202201621A
TW202201621A TW110115491A TW110115491A TW202201621A TW 202201621 A TW202201621 A TW 202201621A TW 110115491 A TW110115491 A TW 110115491A TW 110115491 A TW110115491 A TW 110115491A TW 202201621 A TW202201621 A TW 202201621A
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substrate
mounting
lift pin
lift pins
lift
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TW110115491A
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Chinese (zh)
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邊見篤
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日商東京威力科創股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Provided are a substrate mounting method and a substrate mounting mechanism that can suppress deformation of the substrate. The substrate mounting mechanism is provided with a first lifting pin arranged at the corner of the mounting area, a second lifting pin arranged at the central portion of the short side of the mounting area, a third lifting pin arranged at the central portion of the long side of the mounting area, and a fourth lifting pin arranged at the central portion of the surface of the mounting area. The substrate mounting method includes a step of supporting the substrate by the first to fourth lifting pins at least in a state where the fourth lifting pin is higher than the third lifting pin and the second lifting pin is higher than the fourth lifting pin; after the step of supporting the substrate, a step of accommodating the first to the fourth lifting pins on the mounting table to mount the substrate on the mounting area. The step of mounting the substrate on the mounting area is to mount the central portion of the long side of the substrate on the mounting surface, then mount the central portion of the surface of the substrate on the mounting surface, and then mount the central portion of the short side of the substrate on the mounting surface.

Description

基板載置方法及基板載置機構 Substrate mounting method and substrate mounting mechanism

本揭露係關於一種基板載置方法及基板載置機構。 The present disclosure relates to a substrate mounting method and a substrate mounting mechanism.

專利文獻1係揭露一種基板收授方法,係將基板收授至載置台,該載置台係設置在會對具有可撓性之該基板進行電漿處理的處理腔室內且具備會藉由靜電吸附來吸附該基板的靜電吸盤;該載置台係具備:基板載置面,係載置該基板;第1昇降銷,係可相對於該基板載置面而出沒,且支撐該基板的周緣部;以及第2昇降銷,係可相對於該基板載置面而出沒,且支撐該基板的中央部;該基板收授方法係包含:會使被該第1昇降銷及位於較該第1昇降銷要低之位置的第2昇降銷而支撐在該基板載置面上方之該基板下降,且使該基板從該基板的中央部起載置於該基板載置面的基板載置工序;會藉由該靜電吸盤來吸附載置於該基板載置面的該基板,且對該基板進行電漿處理的工序;以及會在該電漿處理結束後解除該靜電吸盤所致之吸附,且使該第1昇降銷及該第2昇降銷位於相同高度來支撐該基板以使該基板從該基板載置面脫離的基板脫離工序。 Patent Document 1 discloses a substrate transfer method, which comprises transferring a substrate to a mounting table, the mounting table being arranged in a processing chamber for performing plasma processing on the flexible substrate, and having a method of electrostatic adsorption. an electrostatic chuck for sucking the substrate; the mounting table is provided with: a substrate mounting surface, on which the substrate is mounted; a first lift pin, which is capable of appearing and retracting relative to the substrate mounting surface, and supports the peripheral portion of the substrate; and a second lift pin, which is capable of appearing and retracting relative to the substrate placement surface, and supports the central portion of the substrate; the substrate receiving and delivering method includes: causing the first lift pin to be moved by the first lift pin and positioned farther from the first lift pin A substrate placement process in which the substrate supported above the substrate placement surface is lowered by the second lift pin at the lower position, and the substrate is placed on the substrate placement surface from the center of the substrate; A process of adsorbing the substrate placed on the substrate placement surface by the electrostatic chuck and performing plasma treatment on the substrate; and releasing the adsorption by the electrostatic chuck after the plasma treatment is completed, and making the A substrate detachment step in which the first lift pins and the second lift pins are positioned at the same height to support the substrate so as to release the substrate from the substrate placement surface.

專利文獻1:日本特開2013-33847號公報 Patent Document 1: Japanese Patent Laid-Open No. 2013-33847

在一個面向中,本揭露係提供一種將具有可撓性之基板載置於載置台時抑制基板變形的基板載置方法及基板載置機構。 In one aspect, the present disclosure provides a substrate placement method and a substrate placement mechanism for suppressing deformation of a substrate when a flexible substrate is placed on a placement table.

為了解決上述課題,根據一樣態所提供之一種基板載置方法,係將基板載置於載置台,該載置台係具有會載置具有可撓性而為矩形狀之該基板的載置面;該載置面係具有對應於該基板的載置區域;該載置台係具備:第1昇降銷,係可出沒地設在該載置區域的角部;第2昇降銷,係可出沒地設在該載置區域的短邊中央部;第3昇降銷,係可出沒地設在該載置區域的長邊中央部;以及第4昇降銷,係可出沒地設在該載置區域的面中央部;該基板載置方法係具有:至少在該第4昇降銷較該第3昇降銷要高且該第2昇降銷較該第4昇降銷要高的狀態下,藉由該第1至第4昇降銷來支撐該基板的工序;以及在支撐該基板的工序之後,將該第1至第4昇降銷收納於該載置台以將該基板載置於該載置區域的工序;將該基板載置於該載置區域的工序係至少先將該基板的長邊中央部載置於該載置面,接著將該基板的面中央部載置於該載置面,再將該基板的短邊中央部載置於該載置面。 In order to solve the above-mentioned problems, according to one aspect, a substrate mounting method is provided, wherein the substrate is mounted on a mounting table, the mounting table having a mounting surface on which the flexible and rectangular substrate is mounted; The mounting surface has a mounting area corresponding to the substrate; the mounting table is provided with: a first lift pin, which is provided in a corner of the mounting region so as to be in and out; and a second lift pin, which is provided in a retractable manner In the center of the short side of the placement area; a third lift pin is provided in the central part of the long side of the placement area so as to be in and out; and the fourth lift pin is provided in the surface of the placement area in a retractable manner a central part; the substrate mounting method comprises: at least in a state where the fourth lift pin is higher than the third lift pin and the second lift pin is higher than the fourth lift pin, by the first to a step of supporting the substrate by a fourth lift pin; and a step of accommodating the first to fourth lift pins in the mounting table to mount the substrate on the mounting area after the step of supporting the substrate; The step of placing the substrate on the placing area is to first place at least the central portion of the long side of the substrate on the placing surface, then place the central portion of the surface of the substrate on the placing surface, and then place the central portion of the substrate on the placing surface. The short-side central portion is placed on the placement surface.

根據一個面向,便可提供一種將具有可撓性之基板載置於載置台時抑制基板變形的基板載置方法及基板載置機構。 According to one aspect, it is possible to provide a substrate mounting method and a substrate mounting mechanism for suppressing deformation of the substrate when the flexible substrate is mounted on the mounting table.

G:基板 G: substrate

1:基板處理裝置 1: Substrate processing device

2:腔室 2: Chamber

4:基座(載置台) 4: Pedestal (mounting table)

4a:基材 4a: Substrate

4b:絕緣構件 4b: Insulating member

4c:基板載置面(載置面) 4c: Substrate mounting surface (mounting surface)

4d:載置區域 4d: Placement area

4e,4f:中心線 4e, 4f: Centerline

7,7a~7d:插通孔 7,7a~7d: through hole

8:昇降銷 8: Lifting pin

8a:昇降銷(第1昇降銷) 8a: Lift pin (1st lift pin)

8b:昇降銷(第2昇降銷) 8b: Lift pin (2nd lift pin)

8c:昇降銷(第3昇降銷) 8c: Lift pin (3rd lift pin)

8d:昇降銷(第4昇降銷) 8d: Lift pin (4th lift pin)

9a~9d:驅動部 9a~9d: Drive section

31:控制器 31: Controller

40:靜電吸盤 40: Electrostatic chuck

圖1係基板處理裝置之概略剖面圖的一例。 FIG. 1 is an example of a schematic cross-sectional view of a substrate processing apparatus.

圖2係基板處理裝置的平面方向之概略剖面圖的一例。 FIG. 2 is an example of a schematic cross-sectional view in the plane direction of the substrate processing apparatus.

圖3係顯示會驅動昇降銷的驅動機構構成之方塊圖的一例。 FIG. 3 is an example of a block diagram showing the configuration of a drive mechanism that drives the lift pins.

圖4係說明基板處理裝置的基板收授動作之一例的流程圖。 4 is a flowchart illustrating an example of a substrate receiving and receiving operation of the substrate processing apparatus.

圖5係顯示基板處理裝置的基板收授動作時之昇降銷的動作之一例的時序圖。 5 is a timing chart showing an example of the movement of the lift pins during the substrate receiving and receiving operation of the substrate processing apparatus.

圖6係被收授至昇降銷時之基板的剖面概念圖之一例。 FIG. 6 is an example of a cross-sectional conceptual diagram of the substrate when it is received and transferred to the lift pins.

圖7係說明基板撓曲之一例的圖。 FIG. 7 is a diagram illustrating an example of substrate deflection.

以下,參照圖式來說明用以實施本揭露的形態。各圖式中會有對相同構成部分賦予相同符號以省略重複說明的情形。 Hereinafter, a form for implementing the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals may be assigned to the same components to omit overlapping descriptions.

<基板處理裝置> <Substrate processing apparatus>

使用圖1至圖3來說明本實施形態之基板處理裝置1。圖1係基板處理裝置1之概略剖面圖的一例。基板處理裝置1係會將基板G載置於載置台且對基板G施予所欲處理(例如蝕刻處理等)的裝置。另外,載置台係構成為可調整(例如,冷卻)所載置之基板G的溫度。此外,係將水平方向作為X方向,水平且與X方向正交之方向作為Y方向,高度方向則作為Z方向來進行說明。 The substrate processing apparatus 1 of the present embodiment will be described with reference to FIGS. 1 to 3 . FIG. 1 is an example of a schematic cross-sectional view of a substrate processing apparatus 1 . The substrate processing apparatus 1 is an apparatus which places the substrate G on a mounting table and performs desired processing (eg, etching processing, etc.) on the substrate G. As shown in FIG. In addition, the mounting table is configured so that the temperature of the mounted substrate G can be adjusted (for example, cooled). The horizontal direction is referred to as the X direction, the horizontal direction orthogonal to the X direction is referred to as the Y direction, and the height direction is referred to as the Z direction.

另外,在基板處理裝置1中被施予處理的基板G,換句話說被載置於載置台的基板G係俯視時為矩形且具有可撓性的基板。基板G例如也可以為具有可撓性的矩形狀玻璃基板。另外,基板G例如也可以是厚度為0.2mm至數mm左右的薄膜玻璃基板。另外,基板G例如也可以平面尺寸至少包含第6代的1500mm×1800mm左右的尺寸到第10.5代的3000mm×3400mm左右的尺寸。 In addition, the substrate G to be processed in the substrate processing apparatus 1 , in other words, the substrate G to be placed on the stage is a rectangular and flexible substrate in plan view. The substrate G may be, for example, a flexible rectangular glass substrate. In addition, the substrate G may be, for example, a thin-film glass substrate having a thickness of about 0.2 mm to several mm. In addition, the plane size of the substrate G may include at least a size of about 1500 mm×1800 mm for the sixth generation to a size of about 3000 mm×3400 mm for the 10.5th generation, for example.

基板處理裝置1係具備會收納基板G而作為處理容器的腔室2。腔室2係例如由表面被陽極處理(陽極氧化處理)後的鋁所構成,會對應於基板G的形狀而形成為四角筒狀。 The substrate processing apparatus 1 includes a chamber 2 that accommodates the substrate G as a processing container. The chamber 2 is made of, for example, aluminum whose surface has been anodized (anodized), and is formed in a rectangular cylindrical shape in accordance with the shape of the substrate G.

腔室2內的底壁係設有會載置基板G而作為載置台的基座4。基座4係對應於基板G的形狀而形成為四角板狀或柱狀。基座4係具有金屬等導電性材料所構成的基材4a、及設在基材4a底部與腔室2底面之間的絕緣構件4b。基材4a 係連接有用以供給高頻電力的供電線23。供電線23係透過匹配器24而連接於高頻電源25。高頻電源25例如會將13.56MHz的高頻電力施加於基座4。匹配器24會使高頻電源25的輸出阻抗與負荷側的輸入阻抗加以匹配。藉此,基座4的構成便會具有下部電極的功能。 The bottom wall in the chamber 2 is provided with a susceptor 4 on which the substrate G is placed as a placing table. The susceptor 4 is formed in a square plate shape or a columnar shape according to the shape of the substrate G. The susceptor 4 has a base material 4 a made of a conductive material such as metal, and an insulating member 4 b provided between the bottom of the base material 4 a and the bottom surface of the chamber 2 . Substrate 4a A power supply line 23 for supplying high-frequency power is connected to the system. The power supply line 23 is connected to the high-frequency power supply 25 through the matching device 24 . The high-frequency power supply 25 applies, for example, a high-frequency power of 13.56 MHz to the base 4 . The matching unit 24 matches the output impedance of the high-frequency power supply 25 with the input impedance on the load side. Thereby, the structure of the base 4 has the function of the lower electrode.

另外,基座4係設有會藉由靜電吸附來吸附所載置之基板G的靜電吸盤40。靜電吸盤40係設在基板4a上部。靜電吸盤40係具有介電體41及設在介電體41內部的內部電極42。內部電極42係連接有用以施加電壓的供電線43。供電線43係透過開關44而連接於電源45。電源45會將電壓施加於內部電極42。開關44會使電壓的施加導通/斷開。 In addition, the base 4 is provided with an electrostatic chuck 40 for attracting the mounted substrate G by electrostatic attraction. The electrostatic chuck 40 is provided on the upper portion of the substrate 4a. The electrostatic chuck 40 has a dielectric body 41 and an internal electrode 42 provided inside the dielectric body 41 . The inner electrode 42 is connected with a power supply line 43 for applying a voltage. The power supply line 43 is connected to the power source 45 through the switch 44 . The power supply 45 applies voltage to the inner electrodes 42 . Switch 44 turns the application of voltage on/off.

另外,基座4(靜電吸盤40)上面會成為載置基板G的基板載置面4c。此外,基板載置面4c係具有會與基板G內面之外周部相接的外緣部(未圖示)及形成在外緣部內側的凹入部(未圖示)。另外,凹入部係構成為可供給He氣等的導熱氣體。藉由靜電吸盤40來靜電吸附基板G,基板G內面之外周部與基板載置面4c的外緣部便會被氣密吸附。另外,藉由將He氣供給至在基板G內面與基板載置面4c的凹入部之間形成為間隙的空間,便能夠構成為可冷卻(調整溫度)基座4所載置的基板G。另外,也可以在凹入部設置多個微小凸部,藉由外緣部與凸部來支撐基板G。 In addition, the upper surface of the susceptor 4 (the electrostatic chuck 40 ) becomes the substrate placement surface 4c on which the substrate G is placed. Moreover, the board|substrate mounting surface 4c has the outer edge part (not shown) which contact|connects the outer peripheral part of the inner surface of the board|substrate G, and the recessed part (not shown) formed inside the outer edge part. Moreover, the recessed part is comprised so that the heat transfer gas, such as He gas, may be supplied. The substrate G is electrostatically adsorbed by the electrostatic chuck 40, and the outer peripheral portion of the inner surface of the substrate G and the outer edge portion of the substrate placement surface 4c are airtightly adsorbed. In addition, by supplying He gas to the space formed as a gap between the inner surface of the substrate G and the recessed portion of the substrate mounting surface 4c, the substrate G mounted on the susceptor 4 can be cooled (adjusted in temperature). . In addition, a plurality of minute convex portions may be provided in the concave portion, and the substrate G may be supported by the outer edge portion and the convex portion.

腔室2的上部或上壁係以會與基座4對向的方式來設置有會將處理氣體供給至腔室2內且具有上部電極的功能之噴淋頭11。噴淋頭11係在內部形成有會使處理氣體擴散的氣體擴散空間12,且在下面或與基座4的對向面形成有會噴出處理氣體的多個噴出孔13。該噴淋頭11係接地,且會與基座4一同構成一對平行平板電極。此外,本實施形態雖是說明將本揭露適用於藉由平行平板電 極來產生電漿之基板處理裝置的情形,但也可以將本揭露適用於藉由感應耦合來產生電漿之基板處理裝置,另外當然也可以將本揭露適用於藉由其他方法來產生電漿之基板處理裝置。 The upper part or the upper wall of the chamber 2 is provided with the shower head 11 which supplies the process gas into the chamber 2 and has the function of the upper electrode so as to face the susceptor 4 . In the shower head 11 , a gas diffusion space 12 for diffusing the processing gas is formed therein, and a plurality of injection holes 13 for discharging the processing gas are formed on the lower surface or on the surface opposite to the susceptor 4 . The shower head 11 is grounded and forms a pair of parallel plate electrodes together with the base 4 . In addition, although this embodiment illustrates that the present disclosure is applicable to The present disclosure can also be applied to a substrate processing apparatus that generates plasma by inductive coupling, and of course, the present disclosure can also be applied to generating plasma by other methods. substrate processing equipment.

噴淋頭11上面係設有氣體導入口14,該氣體導入口14係連接有處理氣體供給管15,該處理氣體供給管15係透過閥件16及質流控制器17而連接有處理氣體供給源18。從處理氣體供給源18會供給例如用以蝕刻的處理氣體。作為處理氣體係可使用鹵系氣體、O2氣、Ar氣等一般本領域中所使用的氣體。 The upper surface of the shower head 11 is provided with a gas inlet 14 , and the gas inlet 14 is connected with a processing gas supply pipe 15 , and the processing gas supply pipe 15 is connected with the processing gas supply through the valve member 16 and the mass flow controller 17 . Source 18. For example, a process gas for etching is supplied from the process gas supply source 18 . As the processing gas system, halogen-based gas, O 2 gas, Ar gas and other gases generally used in this field can be used.

腔室2底壁係連接有排氣管19,該排氣管19係連接有排氣裝置20。排氣裝置20係具備渦輪分子泵等的真空泵,藉此便可構成為能將腔室2內抽真空至既定減壓環境氣氛。腔室2側壁係形成有用以搬出入基板G的搬出入口21且設有會開閉該搬出入口21的閘閥22,在搬出入口21開啟時,基板G會在被作為搬送構件之搬送臂50(參照後述圖2)從下方支撐的狀態下來在與透過搬出入口21及閘閥22相鄰而未圖示的搬送室之間被加以搬送。 An exhaust pipe 19 is connected to the bottom wall of the chamber 2 , and an exhaust device 20 is connected to the exhaust pipe 19 . The exhaust device 20 is provided with a vacuum pump such as a turbomolecular pump, and can thereby be configured to be able to evacuate the inside of the chamber 2 to a predetermined reduced pressure atmosphere. The side wall of the chamber 2 is formed with an unloading inlet 21 for carrying in and out of the substrate G, and a gate valve 22 for opening and closing the loading and unloading inlet 21 is provided. 2 ), which will be described later, is transported between transport chambers not shown that are adjacent to the permeation inlet 21 and the gate valve 22 in a state of being supported from below.

腔室2的底壁及基座4中,係會於基座4的外周部位置及中央部位置(較外周部位置要內側或接近中央的位置)分別形成有將該等貫通的插通孔7。插通孔7內係分別可相對於基座4的基板載置面4c出沒地插入有會從下方支撐基板G並使其昇降的昇降銷8。昇降銷8係分別設成會在突出時抵接於基板G的外周部及中央部,且藉由未圖示的定位用軸套在徑向或寬度方向被定位的狀態下插入於插通孔7內。 In the bottom wall of the chamber 2 and the susceptor 4, the outer peripheral portion and the central portion of the susceptor 4 are respectively formed with through holes penetrating through them. 7. In the insertion holes 7 , lift pins 8 that support and lift the substrate G from below are inserted into and out of the substrate placement surface 4 c of the base 4 , respectively. The lift pins 8 are respectively provided so as to contact the outer peripheral portion and the central portion of the substrate G when protruding, and are inserted into the insertion holes in a state of being positioned in the radial direction or the width direction by a positioning sleeve (not shown) within 7.

昇降銷8的下部會突出於腔室2外側。昇降銷8的下部係形成有凸緣26,凸緣26係連接有設成圍繞昇降銷8而可伸縮的波紋管27一端部(下端部),該波紋管27另一端部(上端部)則連接於腔室2底壁。或者,也可以將該波紋管27 另一端部(上端部)連接於基座4底壁。藉此,波紋管27便會追隨昇降銷8的昇降而伸縮,且將插通孔7與昇降銷8的間隙加以密封。 The lower part of the lift pin 8 protrudes outside the chamber 2 . The lower part of the lift pin 8 is formed with a flange 26, and the flange 26 is connected to one end (lower end) of a bellows 27 which is arranged to be retractable around the lift pin 8, and the other end (upper end) of the bellows 27 is Connected to the bottom wall of chamber 2. Alternatively, the bellows 27 can also be The other end (upper end) is connected to the bottom wall of the base 4 . Thereby, the bellows 27 expands and contracts following the lifting and lowering of the lift pins 8 , and seals the gap between the insertion holes 7 and the lift pins 8 .

此處,使用圖2進一步說明插通孔7及昇降銷8的配置。圖2係基板處理裝置1的平面方向之概略剖面圖的一例。此外,圖2中係以二點鏈線來表示搬送臂50所保持之基板G配置在載置區域4d上方時的搬送臂50及基板G的位置。 Here, the arrangement of the insertion holes 7 and the lift pins 8 will be further described with reference to FIG. 2 . FIG. 2 is an example of a schematic cross-sectional view of the substrate processing apparatus 1 in the plane direction. In addition, in FIG. 2, the position of the conveyance arm 50 and the board|substrate G when the board|substrate G hold|maintained by the conveyance arm 50 is arrange|positioned above the mounting area 4d is shown by the two-dotted chain line.

如圖2所示,基板G及載置有基板G之基座4的基板載置面4c在俯視時係呈現會具有短邊(Y方向)及長邊(X方向)的矩形狀。另外,基板載置面4c係具有對應於基板G的載置區域4d(圖2中係以虛線來表示)。將基板G載置於基座4時,基板G會被載置於載置區域4d。此外,圖2中係以一點鏈線來表示載置區域4d的中心線4e(連結一側長邊的中點與另一側長邊的中點之線)及中心線4f(連結一側短邊的中點與另一側短邊的中點之線)。另外,圖2中,雖然方便上係將表示載置區域4d的虛線描繪在較表示基板G的二點鏈線要內側,但並非意味著載置區域4d會被限定在較基板G外周要內側,而是希望載置區域4d會與基板G形狀相同且具有相同面積。另外,載置區域4d也可以是具有將基板G包在內之形狀及面積的區域。 As shown in FIG. 2, the board|substrate G and the board|substrate mounting surface 4c of the susceptor 4 on which the board|substrate G is mounted have the rectangular shape which has a short side (Y direction) and a long side (X direction) in planar view. Moreover, the board|substrate mounting surface 4c has the mounting area|region 4d corresponding to the board|substrate G (indicated by the dotted line in FIG. 2). When the substrate G is placed on the susceptor 4, the substrate G is placed on the placement region 4d. In addition, in FIG. 2, the center line 4e (the line connecting the midpoint of one long side and the midpoint of the other long side) and the center line 4f (connecting the short side on one side) of the placement area 4d are indicated by a one-dot chain line. The line between the midpoint of the side and the midpoint of the short side on the other side). In addition, in FIG. 2 , although the dotted line indicating the placement area 4d is drawn on the inside of the two-dot chain line indicating the substrate G for convenience, it does not mean that the placement area 4d is limited to the inner side than the outer periphery of the substrate G. , but it is desirable that the placement region 4d will have the same shape and the same area as the substrate G. In addition, the mounting region 4d may be a region having a shape and an area that encloses the substrate G.

基座4係具有插通孔7a~7d來作為插通孔7。插通孔7a~7c係設在載置區域4d的外周部。插通孔7d係設在被載置區域4d的外周部所圍繞之載置區域4d的面中央部。插通孔7a~7d係配置有昇降銷8a~8d來作為昇降銷8。 The base 4 has insertion holes 7 a to 7 d as the insertion holes 7 . The insertion holes 7a-7c are provided in the outer peripheral part of the mounting area 4d. The insertion hole 7d is provided in the surface center part of the mounting area 4d surrounded by the outer peripheral part of the mounting area 4d. The insertion holes 7 a to 7 d are provided with lift pins 8 a to 8 d as lift pins 8 .

矩形狀載置區域4d的角部係設有插通孔7a。圖2所示之範例中,插通孔7a係以中心線4e及中心線4f作為對稱軸而在載置區域4d內設有4個。各插通孔7a係分別配置有昇降銷8a。以下,將4個昇降銷8a稱為第1群組Gr.1。 The corners of the rectangular mounting region 4d are provided with penetration holes 7a. In the example shown in FIG. 2 , four insertion holes 7a are provided in the placement region 4d with the center line 4e and the center line 4f as axes of symmetry. Lift pins 8a are arranged in the respective insertion holes 7a, respectively. Hereinafter, the four lift pins 8a will be referred to as the first group Gr.1.

矩形狀載置區域4d的短邊中央部(以中心線4f作為對稱軸的左右(Y方向)2個角部之間)係設有插通孔7b。圖2所示之範例中,一側的短邊中央部係以中心線4f作為對稱軸而設有2個插通孔7b。同樣地,另一側的短邊中央部係以中心線4f作為對稱軸而設有2個插通孔7b。載置區域4d內係設有4個插通孔7b。各插通孔7b係分別配置有昇降銷8b。以下,將4個昇降銷8b稱為第2群組Gr.2。 The insertion hole 7b is provided in the center part of the short sides of the rectangular mounting area 4d (between two corners on the left and right (Y direction) with the center line 4f as the axis of symmetry). In the example shown in FIG. 2, two insertion holes 7b are provided in the central part of one short side with the center line 4f as the axis of symmetry. Similarly, the center part of the other short side is provided with two insertion holes 7b with the center line 4f as the axis of symmetry. Four insertion holes 7b are provided in the placement area 4d. Lift pins 8b are arranged in each of the insertion holes 7b, respectively. Hereinafter, the four lift pins 8b will be referred to as the second group Gr.2.

矩形狀載置區域4d的長邊中央部(以中心線4e作為對稱軸的前後(X方向)2個角部之間)係設有插通孔7c。圖2所示之範例中,一側的長邊中央部係在中心線4e上設有插通孔7c。同樣地,另一側的長邊中央部係在中心線4e上設有插通孔7c。載置區域4d內係設有2個插通孔7c。各插通孔7c係分別配置有昇降銷8c。以下,將2個昇降銷8c稱為第3群組Gr.3。 The insertion hole 7c is provided in the center part of the long sides of the rectangular mounting area 4d (between the front and rear (X direction) two corners with the center line 4e as the axis of symmetry). In the example shown in FIG. 2 , a through hole 7c is formed on the center line 4e of the center portion of one long side. Similarly, an insertion hole 7c is provided in the center portion of the other long side tied to the center line 4e. Two insertion holes 7c are provided in the mounting area 4d. Lift pins 8c are arranged in the respective insertion holes 7c, respectively. Hereinafter, the two lift pins 8c will be referred to as the third group Gr.3.

矩形狀載置區域4d之中央附近的面中央部係設有插通孔7d。圖2所示之範例中,插通孔7d係設在中心線4e上且以中心線4f作為對稱軸而設有2個。各插通孔7d係分別配置有昇降銷8d。以下,將2個昇降銷8d稱為第4群組Gr.4。 A penetration hole 7d is provided in the center part of the surface in the vicinity of the center of the rectangular-shaped mounting area 4d. In the example shown in FIG. 2 , two through holes 7d are provided on the center line 4e, and the center line 4f is used as the axis of symmetry. The lift pins 8d are arranged in each of the insertion holes 7d, respectively. Hereinafter, the two lift pins 8d are referred to as the fourth group Gr.4.

圖3係顯示會驅動昇降銷8a~8d的驅動機構構成之方塊圖的一例。 FIG. 3 is an example of a block diagram showing the configuration of a drive mechanism that drives the lift pins 8a to 8d.

昇降銷8a~8d係分別連接於驅動部9a~9d。昇降銷8a~8d係構成為會藉由該驅動部9a~9d的驅動來昇降而相對於基座4的基板載置面4c突出及沒入。驅動部9a~9d係分別例如使用步進馬達來構成。此外,如圖3所示,雖是說明昇降銷8a~8d係構成為可個別地加以驅動,但並不限於此,也可以是構成為可對每一群組(第1群組Gr.1~第4群組Gr.4)分別加以驅動。根據此構成,便可削減驅動部(步進馬達)的數量。 The lift pins 8a to 8d are connected to the drive parts 9a to 9d, respectively. The lift pins 8 a to 8 d are configured to be raised and lowered by the driving of the drive units 9 a to 9 d, and to protrude and sink with respect to the substrate placement surface 4 c of the base 4 . The drive units 9a to 9d are each configured using, for example, a stepping motor. In addition, as shown in FIG. 3 , although the lift pins 8a to 8d have been described as being configured to be individually drivable, the present invention is not limited to this, and may be configured so that each group (the first group Gr. 1 ~4th group Gr.4) are driven separately. According to this configuration, the number of drive units (stepping motors) can be reduced.

驅動部9a~9d的驅動係藉由具備微處理器(電腦)的控制器31來個別地加以控制的構成,藉此,昇降銷8a~8d便構成為可彼此獨立地昇降。控制器 31係連接有使用者介面32及記憶部33,該使用者介面32係由進行指令的輸入操作等以使工序管理者來管理驅動部9a~9d的驅動之鍵盤或將驅動部9a~9d的驅動狀況可視化來加以顯示之顯示器等所構成,該記憶部33儲存有資料庫,係記錄有在控制器31的控制下來實現驅動部9a~9d的驅動之控制程式或驅動條件資料等。此外,視需求而藉由以來自使用者介面32的指示等從記憶部33呼叫出任意資料庫並使控制器31來加以執行,便可在控制器31的控制下來進行驅動部9a~9d的驅動及停止。該資料庫係例如可利用CD-ROM、硬碟、快閃記憶體等電腦可讀取之記憶媒體所儲存之狀態者,或者也可以從其他裝置透過例如專用線路來隨時傳送而加以利用。 The drive systems of the drive units 9a to 9d are individually controlled by the controller 31 provided with a microprocessor (computer), whereby the lift pins 8a to 8d are configured to be able to move up and down independently of each other. controller 31 is connected to a user interface 32 and a memory unit 33, and the user interface 32 is a keyboard for performing command input operations, etc., so that the process manager can manage the driving of the driving units 9a to 9d, or to control the driving of the driving units 9a to 9d. The memory unit 33 is composed of a display or the like that visualizes and displays the driving conditions, and the memory unit 33 stores a database in which a control program or driving condition data and the like that realize the driving of the driving units 9a to 9d under the control of the controller 31 are recorded. In addition, by calling an arbitrary database from the memory unit 33 and executing it by the controller 31 by an instruction or the like from the user interface 32 as required, the drive units 9a to 9d can be controlled under the control of the controller 31. Drive and stop. The database can be used, for example, by using the state stored in a computer-readable storage medium such as CD-ROM, hard disk, and flash memory, or by being transmitted from other devices at any time through a dedicated line, for example.

控制器31、使用者介面32及記憶部33係構成會控制驅動部9a~9d所致之昇降銷8a~8d的昇降之控制部,基座4、昇降銷8a~8d、驅動部9a~9d及控制部則構成基板載置機構。 The controller 31, the user interface 32 and the memory unit 33 constitute a control unit that controls the lifting and lowering of the lift pins 8a-8d caused by the drive units 9a-9d. The base 4, the lift pins 8a-8d, and the drive units 9a-9d and the control unit constitute a substrate placement mechanism.

接著,使用圖4及圖5來說明將基板處理裝置1中的基板G收授至基座4的基板收授方法(載置方法)。 Next, the board|substrate transfer method (mounting method) which transfers the board|substrate G in the board|substrate processing apparatus 1 to the base 4 is demonstrated using FIG.4 and FIG.5.

圖4係說明基板處理裝置1的基板收授動作之一例的流程圖。圖5係顯示基板處理裝置1的基板收授動作時之昇降銷8的動作之一例的時序圖。 FIG. 4 is a flowchart illustrating an example of the substrate receiving and receiving operation of the substrate processing apparatus 1 . FIG. 5 is a timing chart showing an example of the operation of the lift pins 8 during the substrate receiving and receiving operation of the substrate processing apparatus 1 .

步驟S101中,會將搬送臂50所保持之基板G收授至昇降銷8a~8d。具體來說,控制器31會使閘閥22開啟。接著,控制器31會控制搬送臂50,將保持有基板G之搬送臂50從搬出入口21插入至腔室2內以使基板G搬送至基座4上方。接著,控制器31會控制驅動部9a~9d來使昇降銷8a~8d突出成較搬送臂50要高。藉此,基板G便會從搬送臂50收授至昇降銷8a~8d。此外,如圖2所示,昇降 銷8a~8d係配置成不會與搬送臂51接觸。接著,控制器31會控制搬送臂50,使搬送臂50從搬出入口21退出。接著,控制器31會關閉閘閥22。 In step S101, the substrate G held by the transfer arm 50 is transferred to the lift pins 8a-8d. Specifically, the controller 31 causes the gate valve 22 to open. Next, the controller 31 controls the transfer arm 50 to insert the transfer arm 50 holding the substrate G into the chamber 2 from the unloading inlet 21 to transfer the substrate G above the susceptor 4 . Next, the controller 31 controls the drive units 9 a to 9 d so that the lift pins 8 a to 8 d protrude higher than the conveyance arm 50 . Thereby, the board|substrate G is conveyed from the conveyance arm 50 to the lift pins 8a-8d. In addition, as shown in Figure 2, the lift The pins 8 a to 8 d are arranged so as not to come into contact with the transfer arm 51 . Next, the controller 31 controls the transfer arm 50 to withdraw the transfer arm 50 from the carry-out entrance 21 . Next, the controller 31 closes the gate valve 22 .

此處,如圖5所示,支撐基板G之昇降銷8a~8d的高度係以「第3群組Gr.3之昇降銷8c的高度<第4群組Gr.4之昇降銷8d的高度<第2群組Gr.2之昇降銷8b的高度<第1群組Gr.1之昇降銷8a的高度」的方式來加以偏移。 Here, as shown in FIG. 5 , the heights of the lift pins 8a to 8d supporting the substrate G are defined as “the height of the lift pins 8c of the third group Gr.3<the height of the lift pins 8d of the fourth group Gr.4 <The height of the lift pin 8b of the second group Gr.2 <the height of the lift pin 8a of the first group Gr.1" is offset.

此外,昇降銷8a~8d也可以先在較搬送臂50要下側形成昇降銷8a~8d間的偏移關係後,再使昇降銷8a~8d整批地上昇。藉此,便會以第1群組Gr.1之昇降銷8a、第2群組Gr.2之昇降銷8b、第4群組Gr.4之昇降銷8d、第3群組Gr.3之昇降銷8c的順序來接觸於基板G。 In addition, the lift pins 8a to 8d may be moved upward in a batch after forming an offset relationship between the lift pins 8a to 8d on the lower side of the conveying arm 50 . Therefore, the lift pins 8a of the first group Gr.1, the lift pins 8b of the second group Gr.2, the lift pins 8d of the fourth group Gr.4, and the lift pins 8d of the third group Gr.3 The lift pins 8c come into contact with the substrate G in sequence.

另外,也可以使昇降銷8a~8d同時上昇,藉由分別停止在既定高度來形成昇降銷8a~8d間的偏移關係後,再將基板G從搬送臂50收授至昇降銷8a~8d。藉此,第1群組Gr.1之昇降銷8a、第2群組Gr.2之昇降銷8b、第3群組Gr.3之昇降銷8c、第4群組Gr.4之昇降銷8d便會同時接觸於基板G,接著再上昇。接著,便會以第3群組Gr.3之昇降銷8c、第4群組Gr.4之昇降銷8d、第2群組Gr.2之昇降銷8b、第1群組Gr.1之昇降銷8a的順序來停止。 Alternatively, the lift pins 8a to 8d may be raised at the same time, and the offset relationship between the lift pins 8a to 8d may be formed by stopping at predetermined heights, respectively, and then the substrate G may be transferred from the transfer arm 50 to the lift pins 8a to 8d. . Thereby, the lift pins 8a of the first group Gr.1, the lift pins 8b of the second group Gr.2, the lift pins 8c of the third group Gr.3, and the lift pins 8d of the fourth group Gr.4 It will contact with the substrate G at the same time, and then rise again. Then, the lift pins 8c of the third group Gr.3, the lift pins 8d of the fourth group Gr.4, the lift pins 8b of the second group Gr.2, and the lift pins of the first group Gr.1 will be raised and lowered. sequence of pins 8a to stop.

此處,使用圖6來說明被收授至昇降銷8a~8d時之基板G的形狀。圖6係被收授至昇降銷8a~8d時之基板G的剖面概念圖之一例。圖6(A)係從短邊側來觀看基板G的圖,圖6(B)則係從長邊側來觀看基板G的圖。此外,圖6中係誇大地圖示出基板G的撓曲。 Here, the shape of the board|substrate G when it is conveyed to the lift pins 8a-8d is demonstrated using FIG. 6. FIG. FIG. 6 is an example of a conceptual cross-sectional view of the substrate G when it is received and received to the lift pins 8a to 8d. FIG.6(A) is the figure which looked at the board|substrate G from the short side, and FIG.6(B) is the figure which looked at the board|substrate G from the long side. In addition, in FIG. 6, the deflection of the board|substrate G is shown exaggeratedly.

圖6(A)之剖面概念圖201係基板G之A-A剖面(參照圖2)示意圖。A-A剖面中,基板G係使被支撐成第3群組Gr.3之昇降銷8c所支撐的基板G之長邊中央部會較第4群組Gr.4之昇降銷8d所支撐的基板G之面中央部要低。換句話 說,基板G係以在連結基板G一側長邊的長邊中央部與基板G另一側長邊的長邊中央部之線上,使面中央部會較長邊中央部要高的形狀來被支撐在昇降銷8。 The cross-sectional conceptual diagram 201 of FIG. 6(A) is a schematic diagram of the A-A cross-section of the substrate G (refer to FIG. 2 ). In the AA section, the substrate G is supported so that the center of the long side of the substrate G supported by the lift pins 8c of the third group Gr.3 is higher than the substrate G supported by the lift pins 8d of the fourth group Gr.4 The central part of the face should be lower. In other words That is to say, the substrate G is formed in such a shape that the central portion of the surface is higher than the central portion of the longer side on the line connecting the central portion of the long side of the long side of the substrate G and the central portion of the long side of the long side of the substrate G. are supported on lift pins 8 .

圖6(A)之剖面概念圖202係基板G之B-B剖面(參照圖2)示意圖。B-B剖面中,基板G係使被支撐成第2群組Gr.2之昇降銷8b所支撐的基板G之短邊中央部會較第1群組Gr.1之昇降銷8a所支撐的基板G之角部要低。換句話說,基板G係以基板G外周側的短邊會從短邊中央部朝向角部變高的形狀來被支撐在昇降銷8。 The cross-sectional conceptual diagram 202 of FIG. 6(A) is a schematic diagram of the B-B cross-section of the substrate G (refer to FIG. 2 ). In the BB section, the board G is supported so that the short-side central portion of the board G supported by the lift pins 8b of the second group Gr.2 is higher than the board G supported by the lift pins 8a of the first group Gr.1 The corners should be lower. In other words, the substrate G is supported by the lift pins 8 in such a shape that the short side of the outer peripheral side of the substrate G becomes higher from the center portion of the short side toward the corner portion.

圖6(B)之剖面概念圖203係基板G之C-C剖面(參照圖2)示意圖。C-C剖面中,基板G係使被支撐成第3群組Gr.3之昇降銷8c所支撐的基板G之長邊中央部會較第1群組Gr.1之昇降銷8a所支撐的基板G之角部要低。換句話說,基板G係以基板G外周側的長邊會從長邊中央部朝向角部變高的形狀來被支撐在昇降銷8。 The cross-sectional conceptual diagram 203 of FIG. 6(B) is a schematic diagram of the C-C cross-section of the substrate G (refer to FIG. 2 ). In the CC section, the board G is supported so that the center of the long side of the board G supported by the lift pins 8c of the third group Gr.3 is higher than the board G supported by the lift pins 8a of the first group Gr.1 The corners should be lower. In other words, the substrate G is supported by the lift pins 8 in such a shape that the long sides on the outer peripheral side of the substrate G become higher from the center of the long sides toward the corners.

圖6(B)之剖面概念圖204係基板G之D-D剖面(參照圖2)示意圖。D-D剖面中,基板G係使被支撐成第4群組Gr.4之昇降銷8d所支撐的基板G之面中央部會較第2群組Gr.2之昇降銷8b所支撐的基板G之短邊中央部要低。換句話說,基板G係以在連結基板G一側短邊的短邊中央部與基板G另一側短邊的短邊中央部之線上,是會從面中央部朝向短邊中央部變高的形狀來被支撐在昇降銷8。 The cross-sectional conceptual diagram 204 of FIG. 6(B) is a schematic diagram of the D-D cross-section of the substrate G (refer to FIG. 2 ). In the DD section, the substrate G is supported so that the center portion of the surface of the substrate G supported by the lift pins 8d of the fourth group Gr.4 is higher than the substrate G supported by the lift pins 8b of the second group Gr.2. The center of the short side should be lower. In other words, the substrate G is on a line connecting the short-side central portion of the short side of the substrate G and the short-side central portion of the other short side of the substrate G, and the height from the surface central portion toward the short-side central portion is increased. The shape comes to be supported on the lift pins 8.

返回圖4,步驟S102中,控制器31會控制驅動部9a~9d來使昇降銷8a~8d下降。此處,如圖6所示,控制器31會在維持昇降銷8a~8d之高度偏移的情況下來使昇降銷8a~8d下降。接著,步驟S103中,會根據昇降銷8a~8d之高度偏 移量的不同來將第3群組Gr.3之昇降銷8c收納在插通孔7c。藉此,基板G之長邊中央部便會先被載置在基座4的基板載置面4c。 Returning to FIG. 4 , in step S102, the controller 31 controls the drive units 9a to 9d to lower the lift pins 8a to 8d. Here, as shown in FIG. 6 , the controller 31 lowers the lift pins 8a to 8d while maintaining the height deviation of the lift pins 8a to 8d. Next, in step S103, according to the height deviation of the lift pins 8a-8d The lift pins 8c of the third group Gr.3 are accommodated in the insertion holes 7c according to the difference in displacement. Thereby, the center part of the long side of the board|substrate G is mounted on the board|substrate mounting surface 4c of the base 4 first.

步驟S104中,控制器31會控制驅動部9d來使昇降銷8d下降。昇降銷8a及昇降銷8b在此時會停止在步驟S103時的高度。此外,昇降銷8c會收納在插通孔7c而停止在步驟S103時的高度。接著,步驟S105中,會將第4群組Gr.4之昇降銷8d收納在插通孔7d。藉此,基板G之面中央部便會第2順位地被載置在基座4的基板載置面4c。 In step S104, the controller 31 controls the drive unit 9d to lower the lift pins 8d. At this time, the lift pins 8a and the lift pins 8b stop at the height of step S103. In addition, the lift pin 8c is accommodated in the insertion hole 7c, and stops at the height at the time of step S103. Next, in step S105, the lift pins 8d of the fourth group Gr. 4 are accommodated in the insertion holes 7d. Thereby, the center part of the surface of the board|substrate G is mounted on the board|substrate mounting surface 4c of the base 4 in the second order.

步驟S106中,控制器31會控制驅動部9a,9b來使昇降銷8a,8b下降。此處,如圖6所示,控制器31會在維持昇降銷8a,8b之高度偏移的情況下來使昇降銷8a,8b下降。此外,昇降銷8c,8d分別會收納在插通孔7c,7d而停止在步驟S105時的高度。接著,步驟S107中,會根據昇降銷8a,8b之高度偏移量的不同來將第2群組Gr.2之昇降銷8b收納在插通孔7b。藉此,基板G之短邊中央部便會第3順位地被載置在基座4的基板載置面4c。 In step S106, the controller 31 controls the drive parts 9a, 9b to lower the lift pins 8a, 8b. Here, as shown in FIG. 6, the controller 31 lowers the lift pins 8a, 8b while maintaining the height deviation of the lift pins 8a, 8b. In addition, the lift pins 8c, 8d are accommodated in the insertion holes 7c, 7d, respectively, and stop at the height at the time of step S105. Next, in step S107, the lift pins 8b of the second group Gr. 2 are accommodated in the insertion holes 7b according to the difference in height offset of the lift pins 8a, 8b. Thereby, the short-side central portion of the substrate G is placed on the substrate placement surface 4c of the base 4 in the third order.

步驟S108中,控制器31會控制驅動部9a來使昇降銷8a下降。此外,昇降銷8b~8d分別會收納在插通孔7b~7d而停止在步驟S107時的高度。接著,步驟S109中,會將第1群組Gr.1之昇降銷8a收納在插通孔7a。藉此,基板G之角部便會最後地被載置在基座4的基板載置面4c。 In step S108, the controller 31 controls the drive unit 9a to lower the lift pins 8a. In addition, the lift pins 8b to 8d are accommodated in the insertion holes 7b to 7d, respectively, and stop at the height in step S107. Next, in step S109, the lift pins 8a of the first group Gr.1 are accommodated in the insertion holes 7a. Thereby, the corner portion of the substrate G is finally placed on the substrate placement surface 4c of the base 4 .

圖7係說明基板G撓曲之一例的圖。圖7中的上段係以等高線與等高線間的濃淡來顯示基板G被中心線4e及中心線4f分割後的四分之一區域中之基板G的撓曲。此處,左下係基板G的中央(Center)。亦即,右上係對應於基板G的角部,左上係對應於基板G的短邊中央部,右下係對應於基板G的長邊中央部,左下係對應於基板G的面中央部。另外,基板G的撓曲係以昇降銷8a的高度 為基準(0),越往下方撓曲越濃(點越密集),越往上方則撓曲越淡(點越稀疏)來加以圖示。另外,圖7中的下段係以示意方式來顯示A-A剖面下各狀態中之基板G的狀態。 FIG. 7 is a diagram illustrating an example of the deflection of the substrate G. FIG. The upper part in FIG. 7 shows the deflection of the substrate G in a quarter area divided by the center line 4e and the center line 4f by the contour lines and the shades between the contour lines. Here, the lower left is the center (Center) of the board G. That is, the upper right corresponds to the corner of the substrate G, the upper left corresponds to the center of the short side of the substrate G, the lower right corresponds to the center of the long side of the substrate G, and the lower left corresponds to the center of the surface of the substrate G. In addition, the deflection of the board G is determined by the height of the lift pins 8a As a reference (0), the deflection becomes denser (the dots are denser) as it goes downward, and the deflection becomes weaker (the dots are sparser) as it goes up. In addition, the lower stage in FIG. 7 schematically shows the state of the substrate G in each state in the A-A cross section.

另外,圖7(A)係顯示基板G被收授至昇降銷8的狀態(參照步驟S101)。圖7(B)係顯示基板G的長邊中央部被載置於基板載置面4c的狀態(參照步驟S103)。圖7(C)係顯示基板G的面中央部被載置於基板載置面4c的狀態(參照步驟S105)。 In addition, FIG. 7(A) shows the state in which the board|substrate G is conveyed to the lift pins 8 (refer to step S101). FIG.7(B) shows the state which the center part of the long side of the board|substrate G is mounted on the board|substrate mounting surface 4c (refer step S103). FIG.7(C) shows the state which the surface center part of the board|substrate G is mounted on the board|substrate mounting surface 4c (refer step S105).

步驟S101中,會以「第3群組Gr.3之昇降銷8c的高度<第4群組Gr.4之昇降銷8d的高度<第2群組Gr.2之昇降銷8b的高度<第1群組Gr.1之昇降銷8a的高度」的方式來偏移而支撐基板G。藉此,便如圖7(A)所示,基板G會被保持在「基板G之長邊中央部的高度<基板G之面中央部的高度<基板G之短邊中央部的高度<基板G之角部的高度」般撓曲的狀態。 In step S101, the value of "the height of the lift pin 8c of the third group Gr.3 < the height of the lift pin 8d of the fourth group Gr.4 < the height of the lift pin 8b of the second group Gr.2 < the height of the lift pin 8b of the second group Gr.2 The substrate G is supported by offsetting the height of the lift pins 8a of the 1 group Gr.1". As a result, as shown in FIG. 7(A), the substrate G is held in the position of "the height of the central portion of the long side of the substrate G < the height of the central portion of the surface of the substrate G < the height of the central portion of the short side of the substrate G < the substrate The height of the corner of G" is in a state of flexing.

步驟S103中,會先載置基板G之長邊中央部301。在此狀態下,如圖7(B)所示,基板G之面中央部會浮起。 In step S103, the center portion 301 of the long side of the substrate G is placed first. In this state, as shown in FIG.7(B), the center part of the surface of the board|substrate G floats.

步驟S104中,會在停止第1群組Gr.1之昇降銷8a及第2群組Gr.2之昇降銷8b的情況下來使第4群組Gr.4之昇降銷8d下降。藉此,便如圖7(C)所示,能解除基板G之面中央部302的浮起而載置基板G之面中央部302。藉此,便能夠沿著通過基板G長邊中央的中心線4e(參照圖2)來將基板G載置於基座4。 In step S104, the lift pins 8d of the fourth group Gr.4 are lowered while the lift pins 8a of the first group Gr.1 and the lift pins 8b of the second group Gr.2 are stopped. Thereby, as shown in FIG.7(C), the floating of the surface center part 302 of the board|substrate G can be cancelled|released, and the surface center part 302 of the board|substrate G can be mounted. Thereby, the board|substrate G can be mounted on the base 4 along the center line 4e (refer FIG. 2) which passes the center of the long side of the board|substrate G.

之後,藉由以基板G之短邊中央部、基板G之角部的順序來載置於基座4,便能夠防止基板G呈凸狀變形地被加以載置的情形。 After that, by placing the substrate G on the base 4 in the order of the center portion of the short side and the corner portion of the substrate G, it is possible to prevent the substrate G from being placed in a convexly deformed shape.

以上,根據具有本實施形態相關之基板載置機構的基板處理裝置1,在將基板G載置於基座4時,藉由先將會有凸狀變形之虞的基板G之長邊中央 部載置於基座4,便能夠抑制基板G之長邊中央部的凸狀變形。另外,藉由相較於基板G之角部先來設置基板G之短邊中央部,便能夠抑制基板G之短邊中央部的凸狀變形。藉此,基板G內面的外周部與基座4之基板載置面4c的外緣部便會氣密吸附。藉此,在將He氣供給至基板G內面與基板載置面4c的凹入部之間時,便可防止產生He氣的洩漏。 As described above, according to the substrate processing apparatus 1 having the substrate placing mechanism according to the present embodiment, when placing the substrate G on the susceptor 4, the center of the long side of the substrate G, which is likely to be deformed in a convex shape, passes through the center of the long side. By placing the part on the base 4, the convex deformation of the central part of the long side of the substrate G can be suppressed. Moreover, by providing the short-side center part of the board|substrate G rather than the corner part of the board|substrate G, the convex deformation of the short-side center part of the board|substrate G can be suppressed. Thereby, the outer peripheral part of the inner surface of the board|substrate G and the outer edge part of the board|substrate mounting surface 4c of the susceptor 4 are sucked airtightly. Thereby, when the He gas is supplied between the inner surface of the substrate G and the concave portion of the substrate mounting surface 4c, it is possible to prevent the generation of leakage of the He gas.

另外,在將基板G之面中央部載置於基座4時,會在停止第1群組Gr.1之昇降銷8a及第2群組Gr.2之昇降銷8b的情況下來使第4群組Gr.4之昇降銷8d下降。藉此,便可在抑制基板G之面中央部的凸狀變形之情況下來將基板G載置於基座4。藉此,便可防止基板G內面與基板載置面4c的凹入部之間的空間容積增大。 In addition, when the center part of the surface of the substrate G is placed on the base 4, the lift pins 8a of the first group Gr.1 and the lift pins 8b of the second group Gr. The lift pin 8d of the group Gr.4 descends. Thereby, the board|substrate G can be mounted on the base 4, suppressing the convex shape deformation of the surface center part of the board|substrate G. Thereby, the space volume between the inner surface of the board|substrate G and the recessed part of the board|substrate mounting surface 4c can be prevented from increasing.

以上,雖已說明基板處理裝置1,但本揭露並不限於上述實施形態等,可在申請專利範圍所記載之本揭露要旨的範疇內來進行各種變形、改良。 Although the substrate processing apparatus 1 has been described above, the present disclosure is not limited to the above-described embodiments and the like, and various modifications and improvements can be made within the scope of the gist of the present disclosure described in the scope of claims.

S101:將基板收授至昇降銷,配置銷(Gr.3<Gr.4<Gr.2<Gr.1) S101: Transfer the substrate to the lift pins, and configure the pins (Gr.3<Gr.4<Gr.2<Gr.1)

S102:Gr.1~Gr.4下降 S102: Gr.1~Gr.4 drop

S103:Gr.3完成收納(載置長邊中央部) S103: Gr.3 storage completed (placed in the center of the long side)

S104:只有Gr.4下降 S104: Only Gr.4 drops

S105:Gr.4完成收納(載置面中央部) S105: Gr.4 storage completed (central part of the mounting surface)

S106:Gr.1,Gr.2下降 S106: Gr.1, Gr.2 drop

S107:Gr.2完成收納(載置短邊中央部) S107: Gr.2 completed storage (placed at the center of the short side)

S108:Gr.1下降 S108: Gr.1 drop

S109:Gr.1完成收納(載置角部) S109: Gr.1 completed storage (placement corner)

Claims (5)

一種基板載置方法,係將基板載置於載置台,該載置台係具有會載置具有可撓性而為矩形狀之該基板的載置面; A substrate mounting method, comprising mounting a substrate on a mounting table, the mounting table having a mounting surface for mounting the flexible and rectangular substrate; 該載置面係具有對應於該基板的載置區域; the placement surface has a placement area corresponding to the substrate; 該載置台係具備: The stage is equipped with: 第1昇降銷,係可出沒地設在該載置區域的角部; The first lift pin is provided at the corner of the placement area so as to be infestable; 第2昇降銷,係可出沒地設在該載置區域的短邊中央部; The second lift pin is provided in the central part of the short side of the placing area so as to be able to appear and fall; 第3昇降銷,係可出沒地設在該載置區域的長邊中央部;以及 A third lift pin is provided at the center of the long side of the mounting area so as to be able to appear and fall; and 第4昇降銷,係可出沒地設在該載置區域的面中央部; The fourth lift pin is provided in the central part of the surface of the placing area so as to be able to appear and fall; 該基板載置方法係具有: The substrate mounting method includes: 至少在該第4昇降銷較該第3昇降銷要高且該第2昇降銷較該第4昇降銷要高的狀態下,藉由該第1至第4昇降銷來支撐該基板的工序;以及 A step of supporting the substrate by the first to fourth lift pins at least in a state where the fourth lift pin is higher than the third lift pin and the second lift pin is higher than the fourth lift pin; as well as 在支撐該基板的工序之後,將該第1至第4昇降銷收納於該載置台以將該基板載置於該載置區域的工序; After the step of supporting the substrate, the step of accommodating the first to fourth lift pins on the mounting table to mount the substrate on the mounting area; 將該基板載置於該載置區域的工序係至少先將該基板的長邊中央部載置於該載置面,接著將該基板的面中央部載置於該載置面,再將該基板的短邊中央部載置於該載置面。 The step of placing the substrate on the placing area is to place at least the central portion of the long side of the substrate on the placing surface, then place the central portion of the surface of the substrate on the placing surface, and then place the central portion of the substrate on the placing surface. The short-side central portion of the substrate is placed on the placement surface. 如申請專利範圍第1項之基板載置方法,其中支撐該基板的工序係在該第1昇降銷較該第2昇降銷要高的狀態下來支撐該基板; The substrate mounting method of claim 1, wherein the step of supporting the substrate is to support the substrate in a state where the first lift pins are higher than the second lift pins; 將該基板載置於該載置區域的工序係在該基板的短邊中央部被載置於該載置面後,再將該基板的角部載置於該載置面。 In the step of placing the substrate on the placing area, after the center portion of the short side of the substrate is placed on the placing surface, the corner portion of the substrate is placed on the placing surface. 如申請專利範圍第1或2項之基板載置方法,其中將該基板載置於該載置區域的工序係在該基板的長邊中央部被載置於該載置面後,要將該基板的面中央部載置於該載置面時,使該第4昇降銷下降且使該第1昇降銷及該第2昇降銷停止。 According to the substrate mounting method of claim 1 or 2, wherein the step of mounting the substrate on the mounting area is after the center portion of the long side of the substrate is mounted on the mounting surface, and then the substrate is mounted on the mounting surface. When the center portion of the surface of the substrate is placed on the placement surface, the fourth lift pin is lowered and the first lift pin and the second lift pin are stopped. 如申請專利範圍第1至3項中任一項之基板載置方法,其中該第1昇降銷、該第2昇降銷、該第3昇降銷、及該第4昇降銷係彼此獨立地來加以驅動。 The substrate mounting method according to any one of the claims 1 to 3, wherein the first lift pin, the second lift pin, the third lift pin, and the fourth lift pin are installed independently of each other drive. 一種基板載置機構,係具備: A substrate placement mechanism is provided with: 載置台,係具有會載置具有可撓性而為矩形狀之基板的載置面、及設成可從該載置面出沒的昇降銷; a mounting table having a mounting surface on which a flexible rectangular substrate can be mounted, and lift pins provided so as to be able to protrude from the mounting surface; 驅動部,係驅動該昇降銷;以及 a driving part for driving the lift pin; and 控制部,係控制該驅動部; a control part, which controls the driving part; 該載置面係具有對應於該基板的載置區域; the placement surface has a placement area corresponding to the substrate; 該昇降銷係具有可出沒地設在該載置區域的角部之第1昇降銷、可出沒地設在該載置區域的短邊中央部之第2昇降銷、可出沒地設在該載置區域的長邊中央部之第3昇降銷、及可出沒地設在該載置區域的面中央部之第4昇降銷; The lift pin is provided with a first lift pin that can be retracted at the corner of the mounting area, a second lift pin that can be mounted at the center of the short side of the mounting area, and a A third lift pin at the center of the long side of the placement area, and a fourth lift pin that can be installed in the center of the surface of the placement area; 該控制部會控制該驅動部來執行下述工序: The control unit will control the drive unit to perform the following processes: 至少在該第4昇降銷較該第3昇降銷要高且該第2昇降銷較該第4昇降銷要高的狀態下,藉由該第1至第4昇降銷來支撐該基板的工序;以及 A step of supporting the substrate by the first to fourth lift pins at least in a state where the fourth lift pin is higher than the third lift pin and the second lift pin is higher than the fourth lift pin; as well as 在支撐該基板的工序之後,將該第1至第4昇降銷收納於該載置台以將該基板載置於該載置區域的工序; After the step of supporting the substrate, the step of accommodating the first to fourth lift pins on the mounting table to mount the substrate on the mounting area; 將該基板載置於該載置區域的工序係至少先將該基板的長邊中央部載置於該載置面,接著將該基板的面中央部載置於該載置面,再將該基板的短邊中央部載置於該載置面。 The step of placing the substrate on the placing area is to place at least the central portion of the long side of the substrate on the placing surface, then place the central portion of the surface of the substrate on the placing surface, and then place the central portion of the substrate on the placing surface. The short-side central portion of the substrate is placed on the placement surface.
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