WO2019198537A1 - Substrate holding device, substrate holding method, and film forming device - Google Patents

Substrate holding device, substrate holding method, and film forming device Download PDF

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Publication number
WO2019198537A1
WO2019198537A1 PCT/JP2019/013780 JP2019013780W WO2019198537A1 WO 2019198537 A1 WO2019198537 A1 WO 2019198537A1 JP 2019013780 W JP2019013780 W JP 2019013780W WO 2019198537 A1 WO2019198537 A1 WO 2019198537A1
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WO
WIPO (PCT)
Prior art keywords
clamp
support
substrates
portions
support surface
Prior art date
Application number
PCT/JP2019/013780
Other languages
French (fr)
Japanese (ja)
Inventor
雄亮 佐藤
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to JP2019535965A priority Critical patent/JP6808839B2/en
Priority to CN201980005899.7A priority patent/CN111373523B/en
Publication of WO2019198537A1 publication Critical patent/WO2019198537A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a substrate holding apparatus, a substrate holding method, and a film forming apparatus capable of raising a substrate from a horizontal posture to a vertical posture.
  • a vertical sputtering apparatus that forms a predetermined film on the surface of a glass substrate standing in a vertical direction.
  • This type of sputtering apparatus generally includes a film formation chamber having a target arranged in a vertical direction, and a substrate holding mechanism capable of raising the substrate from a horizontal posture to a vertical posture in the film formation chamber. is there.
  • Patent Document 1 discloses a substrate holding plate for placing a substrate horizontally loaded in a film forming chamber, a substrate clamping mechanism for clamping the substrate placed on the substrate holding plate, and a rotating mechanism for raising the substrate holding plate. Is disclosed.
  • an object of the present invention is to provide a substrate holding apparatus, a substrate holding method, and a film forming apparatus that can stably hold a plurality of substrates in a vertical posture.
  • a substrate holding apparatus includes a substrate support base and a clamp mechanism.
  • the substrate support has a support surface and a rotation mechanism.
  • the support surface has a plurality of support regions in which a plurality of substrates are individually arranged.
  • the rotation mechanism unit is configured to be able to erect the support surface from a horizontal posture to a vertical posture around an axis parallel to the support surface.
  • the clamp mechanism has a plurality of clamp portions.
  • the plurality of clamp portions are arranged along the periphery of the plurality of support regions, and are configured to be able to hold peripheral portions of the plurality of substrates.
  • the plurality of clamp portions include a plurality of first clamp portions that are disposed in gap regions between the plurality of support regions and that can individually hold the peripheral portions of the plurality of substrates.
  • the plurality of clamp portions include the plurality of first clamp portions arranged in the gap regions between the plurality of support regions, the plurality of substrates are maintained while appropriately maintaining the apparatus position between the substrates. Can be stably held in a vertical posture.
  • the plurality of support regions may include at least two support regions adjacent in the vertical direction when the substrate support is in a vertical posture.
  • the plurality of clamp portions may further include a plurality of second clamp portions and a plurality of third clamp portions disposed in a peripheral region around the plurality of support regions excluding the gap region.
  • the plurality of first and second clamp portions have hook portions that face the peripheral portions of the plurality of substrates with a movement substantially parallel to the support surface.
  • the plurality of third clamp portions include a hook portion that opposes the peripheral portions of the plurality of substrates with a movement approaching the support surface from above the support surface.
  • the plurality of first and second clamp portions may further include a rotation support portion that rotatably supports the hook portion along a curved track having a certain curvature toward the clamp position.
  • the plurality of third clamp portions move along a curved track having a maximum height from the support surface that is larger than the plurality of first and second clamp portions, with the hook portions facing the clamp position. You may further have a link mechanism part supported so that it is possible.
  • the plurality of first to third clamp portions may each further include a biasing member that biases the hook portion to the clamp position.
  • the clamp mechanism holds the peripheral portions of the plurality of substrates by the plurality of first clamp portions and the plurality of second clamp portions, and then holds the peripheral portions of the plurality of substrates by the plurality of third clamp portions. It may be configured to. Thereby, even when the substrate is warped, the substrate can be appropriately held on the support surface.
  • a glass substrate having a rectangular planar shape is used for the plurality of substrates.
  • the plurality of third clamp portions may be arranged at positions closer to the corners of the plurality of substrates than the plurality of first clamp portions and the plurality of second clamp portions.
  • the clamp mechanism may further include a drive unit capable of moving the plurality of clamp units from the clamp position to the non-clamp position when the substrate support is in a horizontal posture.
  • the drive unit includes a first base member and a first lifting unit.
  • the first base member has a plurality of operation shafts arranged corresponding to the plurality of clamp portions.
  • the first elevating unit includes a raised position for setting the plurality of clamp portions to the non-clamping position by pushing up the plurality of clamp portions by the plurality of operation shafts, and the plurality of clamp portions by the plurality of operation shafts. The first base member is moved up and down between the lowered position where the plurality of clamp portions are set at the clamp position by releasing the push-up.
  • the driving unit may further include a second base member and a second lifting unit.
  • the second base member has a plurality of support pins that are arranged in parallel with the first base member and can penetrate the support surface.
  • the second elevating unit includes a raised position for supporting the back surfaces of the plurality of substrates with the plurality of support pins, and a lowered position for arranging the plurality of substrates supported by the plurality of support pins on the support surface. The second base member is moved up and down.
  • the substrate support may further include an adsorption part.
  • the adsorption portion is provided on the support surface and configured to electrostatically adsorb the plurality of substrates.
  • a substrate holding method includes: Arranging the substrates individually in a plurality of support areas on the support surface maintained in a horizontal position, The substrate is disposed in an intermediate region between the plurality of support regions and a peripheral region of the plurality of support regions excluding the intermediate region, and moves along a peripheral portion of the substrate with a movement substantially parallel to the support surface.
  • the substrate is held by a plurality of clamp portions having first hook portions facing each other, The substrate is held by a plurality of clamp portions arranged in the peripheral region and having a second hook portion facing the peripheral edge of the substrate with a movement approaching the support surface from above the support surface,
  • the support surface is erected from a horizontal posture to a vertical posture.
  • a film formation apparatus includes a film formation chamber, a substrate support, and a clamp mechanism.
  • the film formation chamber has a film formation source.
  • the substrate support is disposed in the film forming chamber.
  • the substrate support base can stand a support surface having a plurality of support regions on which a plurality of substrates are individually arranged, and the support surface from a horizontal posture to a vertical posture around an axis parallel to the support surface.
  • the clamp mechanism has a plurality of clamp portions.
  • the plurality of clamp portions are arranged along the periphery of the plurality of support regions, and are configured to be able to hold peripheral portions of the plurality of substrates.
  • the plurality of clamp portions include a plurality of first clamp portions that are disposed in gap regions between the plurality of support regions and that can individually hold the peripheral portions of the plurality of substrates.
  • a plurality of substrates can be stably held in a vertical posture.
  • FIG. 8 is a side view showing an example of the operation.
  • FIG. 1 is a schematic perspective view showing a configuration of a substrate holding apparatus according to an embodiment of the present invention
  • FIG. 2 is a schematic side view of a film forming apparatus provided with the substrate holding apparatus.
  • the X axis, the Y axis, and the Z axis indicate three axial directions orthogonal to each other.
  • the X axis and the Y axis correspond to the horizontal direction (lateral direction), and the Z axis corresponds to the vertical direction (vertical direction). .
  • the substrate holding device 100 includes a substrate support 10 having a support surface 10s that can support a plurality of substrates.
  • the substrate support 10 includes a housing 11, a platen 12 having a support surface 10 s formed on the upper surface, and a rotation mechanism unit 13 that supports the platen 12 so as to be rotatable with respect to the housing 11.
  • the substrate holding device 100 is configured to support two glass substrates W1 and W2 as a plurality of substrates and to hold the substrates W1 and W2 on the support surface 10s via a clamp mechanism described later.
  • the substrate support 10 is configured to be able to stand the platen 12 (support surface 10s) from the horizontal posture shown in FIG. 2A to the vertical posture shown in FIG.
  • the rotation mechanism unit 13 includes a rotation shaft 131 that is parallel to the Y-axis direction, and a drive source 132 that rotates the platen 12 around the rotation shaft 131 between a horizontal posture and a vertical posture.
  • the housing 11 accommodates a drive unit 50 (see FIG. 2B and FIGS. 6 to 8) that constitutes a part of the clamp mechanism.
  • the film forming apparatus 200 includes a substrate holding device 100, a film forming chamber 210, and a controller 90 that comprehensively controls them.
  • the substrate holding apparatus 100 is installed inside the film forming chamber 210 as shown in FIGS.
  • the film formation chamber 210 is configured as a sputtering chamber, and includes a vacuum chamber 211 and a target unit 212 as a film formation source installed inside the vacuum chamber 211.
  • the vacuum chamber 211 is connected to a vacuum exhaust line (not shown), and is configured to be able to exhaust or maintain the inside in a predetermined reduced pressure atmosphere.
  • the target unit 212 includes a target material made of a material to be deposited and a backing plate that supports the target material. In the case of the magnetron sputtering method, the target unit 212 further includes a magnetic circuit that forms a magnetic field on the surface of the target material.
  • the film formation chamber 210 further includes a gas introduction line for introducing sputtering gas and reactive gas into the vacuum chamber 211, a power supply line for supplying predetermined power to the target unit 212, and loading of the substrates W1 and W2. And a gate valve for carrying it out.
  • the target unit 212 is arranged vertically so that the surface of the target material is parallel to the YZ plane, and is opposed to the support surface 10s of the platen 12 whose posture is changed to the standing position in the X-axis direction with a predetermined interval. .
  • the target material typically has a larger area than the support surface 10s.
  • the film forming apparatus 200 performs a predetermined film forming process on each of the substrates W1 and W2 on the support surface 10s in a state where the platen 12 is erected so that one substrate W1 is on the lower side and the other substrate W2 is on the upper side. It is possible to apply.
  • a mask member (not shown) for defining the film forming regions of the substrates W1 and W2 may be installed.
  • the substrates W1 and W2 are typically rectangular glass substrates, but are not limited thereto, and may be ceramic substrates other than glass, resin substrates, and metal substrates. Various functional layers including a metal layer and an insulating layer may be formed in advance on the film formation surfaces of the substrates W1 and W2.
  • the substrate size is not particularly limited and can be set as appropriate according to the size of the support surface 10s and the number of processed sheets. For example, a substrate having a half size of G6 size (1850 mm ⁇ 1500 mm) is used.
  • FIG. 3 is a plan view of the substrate support 10.
  • the support surface 10s has a rectangular planar shape and is typically formed as a flat surface.
  • the support surface 10s is made of a metal material such as copper, aluminum, or stainless steel.
  • the support surface 10s may be composed of a single plate material, or may be composed of an array of a plurality of plate materials.
  • the support surface 10s may have therein a circulation passage or a heater through which the refrigerant or the heating medium can circulate so that the substrates W1 and W2 can be cooled or heated to a predetermined temperature.
  • the support surface 10s includes a plurality (two in this example) of support areas S1 and S2 on which a plurality (two in this example) of substrates W1 and W2 are individually arranged.
  • the support regions S1 and S2 are laid out so that one side of each long side is adjacent to each other with an interval in the vertical direction when the platen 12 is in a vertical posture.
  • the support surface 10s further includes an intermediate region 10M positioned between the support regions S1 and S2 and a peripheral region 10C (excluding the intermediate region 10M) positioned around the support regions S1 and S2.
  • Each support region S1, S2 is provided with a plurality of first insertion holes V1 into which a plurality of support pins VP1 (see FIGS. 6 to 8) for raising and lowering the substrates W1, W2 with respect to the support surface 10s can be inserted.
  • a plurality of second insertion holes V2 into which a plurality of positioning pins VP2 (see FIGS. 6 to 8) for positioning the substrates W1 and W2 with respect to the support surface 10s can be inserted in the intermediate region 10M and the peripheral region 10C. It has been.
  • the first insertion hole V1 includes a plurality (three in this example) of insertion holes V11 formed in one support region S1 and a plurality (three in this example) of the other support region S2.
  • the second insertion hole V2 includes a plurality (ten in this example) of insertion holes V21 formed along the periphery of the one support region S1 and a plurality of (books) formed along the periphery of the other support region S2.
  • the example includes 10) insertion holes V22.
  • two insertion holes V21 and V22 are arranged on both long sides of the substrates W1 and W2, and three on both short sides of the substrates W1 and W2 (see FIG. 3).
  • the substrate holding device 100 includes a clamp mechanism for holding the substrates W1 and W2 disposed on the support surface 10s.
  • the clamp mechanism includes a plurality of clamp parts (first clamp part C1, second clamp part C2, and third clamp part C3) disposed along the periphery of the support regions S1 and S2, and a drive for driving these clamp parts. Part 50.
  • Each clamp part is comprised so that the peripheral part of board
  • the first clamp part C1 is disposed in an intermediate region 10M between the two support regions S1 and S2.
  • the second and third clamp portions C2 and C3 are disposed in the peripheral region 10C around the support regions S1 and S2, respectively.
  • the first clamp part C1 includes a plurality of clamp parts C11 capable of holding one side on the intermediate area 10M side of the substrate W1 arranged in the support area S1, and one of the substrate W2 arranged on the support area S2 on the intermediate area 10M side. And a plurality of clamp portions C12 that can hold the long side.
  • the positions and number of the clamp portions C11 and C12 are not particularly limited. In the present embodiment, a total of two clamp portions C11 and a total of four clamp portions are provided near both ends of the one long side of the substrates W1 and W2. C12 is arranged (see FIG. 3).
  • the clamp portions C11 and C12 are collectively referred to as a first clamp portion C1 unless otherwise described.
  • the second clamp portion C2 includes a plurality of clamp portions C21 capable of holding three sides on the peripheral region 10C side of the substrate W1 disposed in the support region S1, and the peripheral region 10C side of the substrate W2 disposed in the support region S2. It comprises a plurality of clamp parts C22 that can hold three sides.
  • the positions and number of the clamp portions C21 and C22 are not particularly limited. In the present embodiment, two pieces are provided on the other long side of the substrates W1 and W2, and one piece is provided on both short sides of the substrates W1 and W2. They are arranged one by one (see FIG. 3).
  • the clamp parts C21 and C22 are generically referred to as a second clamp part C2 unless otherwise described.
  • the third clamp portion C3 includes a plurality of clamp portions C31 capable of holding three sides on the peripheral region 10C side of the substrate W1 disposed in the support region S1, and the peripheral region 10C side of the substrate W2 disposed in the support region S2. It comprises a plurality of clamp parts C32 that can hold three sides.
  • the positions and number of the clamp parts C31 and C32 are not particularly limited, and in the present embodiment, one each is arranged in the vicinity of the corners (four corners) of the substrates W1 and W2 (see FIG. 3).
  • the clamp parts C31 and C32 are collectively referred to as a third clamp part C3 unless otherwise described.
  • the first and second clamp portions C1 (C11, C12), C2 (C21, C22) are hook portions 21 (see FIG. 5) that face the peripheral portions of the substrates W1, W2 with movement substantially parallel to the support surface 10s. 4).
  • the substrates W1 and W2 are placed with positional displacement with respect to the support regions S1 and S2, the substrates W1 and W2 are positioned in the process of the clamping operation by the first and second clamp portions C1 and C2. Since it can be moved in a direction in which the deviation is eliminated, a predetermined alignment accuracy of the substrates W1, W2 is ensured at the time of clamping.
  • movement substantially parallel to the support surface 10s means not only movement parallel to the support surface 10s but also movement substantially parallel to the support surface 10s.
  • the substantially parallel movement includes movement of the hook portion 21 along a linear or curved path.
  • FIG. 4 shows a configuration example of the first and second clamp portions C1 and C2.
  • FIG. 4 is a cross-sectional view of the main part of the substrate support 10 showing the configuration of the first and second clamp parts C1 and C2.
  • the first and second clamp parts C1 and C2 have a hook member 20 having a hook part 21 protruding from the support surface 10s at the tip part, and a constant curvature with the hook part 21 facing the clamp position.
  • Each has a rotation support portion 23 that supports the hook member 20 so as to be able to be rotated along a curved track.
  • the hook member 20 is composed of a metal plate material that is long in the Z-axis direction and has a hook portion 21 and a base end portion 22.
  • the hook portion 21 is formed by extending one end of the hook member 20 protruding from the support surface 10s to the support regions S1 and S2 side through the opening 10g formed in the support surface 10s.
  • the base end portion 22 is formed by extending the other end of the hook member 20 in the same direction as the hook portion 21.
  • the hook member 20 is supported by the platen 12 via the rotation support portion 23, and can be rotated from the clamp position to the non-clamp position by receiving a push-up operation of operation shafts CP1 and CP2 (described later) with respect to the base end portion 22. Composed.
  • the unclamping position of the hook portion 21 is set to a position facing the peripheral portions of the substrates W1 and W2 on the support regions S1 and S2 in a direction parallel to the support surface 10s (see FIG. 4). Thereby, the hook part 21 can be moved to the clamp position which opposes the peripheral part of board
  • the rotation support portion 23 includes a rotation shaft 231 that penetrates the hook member 20 and a connecting member 232 that connects the rotation shaft 231 and the platen 12, and the hook portion 21 has a clamping position indicated by a solid line in FIG. 4. 4 is supported so as to be rotatable between the unclamping position indicated by a two-dot chain line in FIG.
  • the pivot support position of the hook member 20 by the rotation support portion 23 is not particularly limited, but it is preferable that the rotation locus of the hook portion 21 be set to a position as parallel as possible to the support surface 10s. Accordingly, it is possible to finely adjust the positions of the substrates W1 and W2 in the process of moving the hook portion 21 to the clamp position while keeping the rotation angle range of the hook member 20 small.
  • the hook portion 21 faces the substrate W1 and W2 placed on the support regions S1 and S2 with a slight gap immediately above the peripheral edge portions of the substrate W1 and W2, and can be prevented from being detached from the support surface 10s. , W2 are held.
  • the hook portion 21 retracts to the outside of the peripheral portions of the substrates W1 and W2 placed in the support regions S1 and S2 so as not to hinder the lifting and lowering operation of the substrates W1 and W2 with respect to the support surface 10s. .
  • the urging member 24 is constituted by a coil spring attached between the platen 12 and the hook member 20, but is not limited thereto, and is attached, for example, around the rotation shaft 231 of the rotation support portion 23. You may comprise a helical spring etc. Since the hook portion 21 is constantly urged to the clamp position by the urging member 24, the holding operation of the substrates W1 and W2 can be maintained regardless of the posture of the platen 12.
  • a plurality of protrusions 10d for supporting the substrates W1 and W2 at multiple points are installed.
  • the position and number of the protrusions 10d are not particularly limited, but typically, the protrusions 10d are arranged at positions offset from the clamp positions of the substrate W by the clamp parts C1 to C3.
  • the protrusion 10d is for forming a predetermined gap between the back surfaces (non-film-forming surfaces) of the substrates W1 and W2 and the support surface 10s, but may be omitted as necessary.
  • the third clamp part C3 (C31, C32) has a hook part 31 (see FIG. 5) facing the peripheral part of the substrates W1, W2 with a movement approaching the support surface 10s from above the support surface 10s. .
  • the third clamp part C3 is disposed at a position closer to the corners of the substrates W1 and W2 than the first and second clamp parts C1 and C2.
  • FIG. 5 is a cross-sectional view of the main part of the substrate support 10 showing the configuration of the third clamp part C3.
  • the third clamp part C3 includes a hook member 30 having a hook part 31 protruding from the support surface 10s at a tip part, and the first and second clamp parts with the hook part 31 directed to a clamp position. And a link mechanism portion 33 that supports the hook member 30 so as to be movable along a curved track having a maximum height (h) from the support surface 10s larger than C1 and C2.
  • the hook member 30 is formed of a metal plate material that has a hook portion 31 and a base end portion 32 and is long in the Z-axis direction.
  • the hook portion 31 is formed by extending one end of the hook member 30 protruding from the support surface 10s to the support regions S1 and S2 side through the opening 10g formed in the support surface 10s.
  • the base end portion 32 is formed by extending the other end of the hook member 30 in the same direction as the hook portion 31.
  • the hook member 30 is supported by the platen 12 via the link mechanism 33, and is configured to be movable from the clamp position to the non-clamp position in response to a push-up operation of an operation shaft CP3 (described later) with respect to the base end portion 32. .
  • the height from the support surface 10s of the hook part 31 at the non-clamping position of the third clamp part C3 is from the support surface 10s of the hook part 21 at the non-clamping position of the first and second clamp parts C1 and C2. It is set larger than the height (see FIGS. 4 and 5).
  • the hook part 31 can be moved toward the clamp position along a curved track having a maximum height (h) from the support surface 10s larger than the first and second clamp parts C1 and C2.
  • the hook part 31 can be moved from the upper side of the support surface 10 s to the clamp position facing the peripheral parts of the substrates W ⁇ b> 1 and W ⁇ b> 2 with a movement approaching the support surface 10 s.
  • the link mechanism unit 33 includes two link members 331 and 332, and includes a four-bar rotation mechanism in which both ends of the link members 331 and 332 are rotatably connected to the platen 12 and the hook member 30.
  • the link mechanism portion 33 supports the hook portion 31 so as to be movable between a clamping position indicated by a solid line in FIG. 5 and an unclamping position indicated by a two-dot chain line in FIG. 5.
  • the position and length of the link members 331 and 332 constituting the link mechanism portion 33 are not particularly limited, but the hook portion 31 is located directly above the peripheral edge at a position higher than the assumed warpage of the peripheral edge of the substrates W1 and W2. It is preferable to set the position and the length that can be passed.
  • the hook portion 31 faces the substrate W1 and W2 placed on the support areas S1 and S2 with a slight gap immediately above the peripheral edge portions, and can be prevented from being detached from the support surface 10s. , W2 are held.
  • the hook portion 31 retracts to the outside of the peripheral portions of the substrates W1 and W2 placed on the support regions S1 and S2 so as not to hinder the lifting and lowering operations of the substrates W1 and W2 with respect to the support surface 10s. .
  • the third clamp part C3 further includes a biasing member 34 that biases the hook part 31 to the clamp position.
  • the urging member 24 is configured by a coil spring attached between the platen 12 and the hook member 20, but is not limited thereto, and is attached, for example, around an arbitrary rotation shaft of the link mechanism 33. You may comprise a helical spring etc. Since the hook portion 31 is constantly urged to the clamp position by the urging member 34, the holding operation of the substrates W1 and W2 can be maintained regardless of the posture of the platen 12.
  • FIG. 6 is a perspective view of the drive unit 50
  • FIG. 7 is a plan view thereof
  • FIG. 8 is a side view showing an example of the operation thereof.
  • the drive unit 50 is configured to be able to move the first to third clamp units C1 to C3 from the clamp position to the non-clamp position when the platen 12 is in a horizontal posture.
  • the drive part 50 has the 1st base member 60 and the 1st raising / lowering unit 65 as a drive device in a clamp mechanism.
  • the first base member 60 is housed in the housing 11 (see FIG. 1) and is installed at a position facing the platen 12 in the horizontal posture in the vertical direction.
  • the first base member 60 has a plurality of operation axes CP1, CP2, and CP3 that are disposed in correspondence with the first clamp part C1, the second clamp part C2, and the third clamp part C3, respectively.
  • the operation shafts CP1 to CP3 are shaft-like members erected in parallel to the Z-axis direction on one main surface (upper surface) of the first base member 60.
  • the shaft lengths of the operation shafts CP1 to CP3 are Each is the same.
  • the first base member 60 is composed of a metal frame having a rectangular planar shape having an opening 60a in the plane.
  • the operation axes CP1 to CP3 are arranged at positions facing the base end portions 22 and 32 of the hook members 20 and 30 constituting the clamp portions C1 to C3 directly above in the Z-axis direction.
  • the operation shaft CP1 corresponding to the first clamp portion C1 is disposed in an intermediate region extending inward from the central portion of each long side of the first base member 60, and corresponds to the second and third clamp portions.
  • the operation axes CP ⁇ b> 2 and CP ⁇ b> 3 are disposed in the peripheral region 62 of the first base member 60, respectively.
  • the first elevating unit 65 is supported by the housing 11 and configured to be able to raise and lower the first base member 60 with respect to the platen 12 in the Z-axis direction.
  • the first elevating unit 65 includes a fluid pressure cylinder unit, a ball screw unit, and the like installed on the other main surface (lower surface) of the first base member 60.
  • the number of the first elevating units 65 may be singular or plural (two in this example), and can be determined according to the size of the first base member 60 and the like.
  • the first elevating unit 65 is configured to be able to raise and lower the first base member 60 between the raised position shown in FIGS. 8B and 8C and the lowered position shown in FIG. 8A.
  • the first to third clamp parts C1 to C3 are pushed up by the operation axes CP1 to CP3 to set the first to third clamp parts C1 to C3 to the non-clamp position.
  • the first to third clamp portions C1 to C3 are set to the clamp positions by releasing the push-up of the first to third clamp portions C1 to C3 by the operation shafts CP1 to CP3.
  • the reaction of the correction operation of the warp by the third clamp part C3 is the substrate W1, W2.
  • the other portions are lifted and the substrates W1 and W2 cannot be properly held by the first and second clamp portions C1 and C2.
  • the drive unit 50 in the present embodiment holds the peripheral portions of the substrates W1, W2 by the first and second clamp portions C1, C2, and then holds the peripheral portions of the substrates W1, W2 by the third clamp portion C3. Configured. Accordingly, even when the peripheral corner portions of the substrates W1 and W2 are warped, the peripheral portions of the substrates W1 and W2 can be properly held with respect to the support surface 10s by all the clamp portions C1 to C3. It becomes.
  • the structure for realizing such a configuration is not particularly limited.
  • the base end of the hook member 20 constituting the first and second clamp portions C1 and C2 is used.
  • the portion 22 has a shape that protrudes downward (on the drive portion 50 side) from the base end portion 32 of the hook member 30 constituting the third clamp portion C3.
  • CP1 required to move the hook portions 21 of the first and second clamp portions C1 and C2 from the non-clamp position to the clamp position.
  • CP2 stroke amount H3 (see FIG. 5) of the operating shaft CP3 required to move the hook portion 31 of the third clamp portion C3 from the non-clamping position to the clamping position rather than the stroke amount H1 (see FIG. 4) of CP2.
  • the drive unit 50 further includes a substrate lifting mechanism that lifts and lowers the substrates W1 and W2 with respect to the support surface 10s of the platen 12. That is, the drive unit 50 includes a second base member 70 having a plurality of support pins VP1 that can penetrate the support surface 10s, and a second elevating unit 75 that raises and lowers the second base member 70.
  • the second base member 70 has a substantially rectangular main plate 71 arranged in parallel with the first base member 60 and four sub-plates 72 arranged at the four corners of the main plate 71.
  • the second base member 70 is disposed immediately above the first base member 60 (see FIGS. 6 and 7).
  • the second base member 70 is indicated by hatching in FIG.
  • Each sub-plate 72 is arranged in parallel to the main plate 71, and is integrally fixed to the upper surface of the four corners of the main plate 71 via a connector having an appropriate height.
  • the main plate 71 and the sub plate 72 are positioned directly below the support surface 10s of the platen 12 in a horizontal posture, and the plurality of support pins VP1 are inserted into the plurality of first insertion holes V1 provided in the support surface 10s of the platen 12. It is arranged at the corresponding position.
  • the plurality of support pins VP1 are erected at predetermined positions on the main plate 71 and the sub plate 72, respectively.
  • the axial length of each support pin VP1 is set so that the height of the top is constant.
  • the support pin VP1 disposed on the sub plate 72 is formed to be shorter than the support pin VP1 disposed on the main plate 71 by an amount corresponding to the difference in height between the main plate 71 and the sub plate 72.
  • the shape of the tip portion of the support pin VP1 that contacts the back surfaces (non-film-forming surfaces) of the substrates W1 and W2 is not particularly limited, and is formed in a curved shape as shown in FIG. 9, for example.
  • the second elevating unit 75 is supported by the housing 11 and configured to be able to raise and lower the second base member 70 in the Z-axis direction with respect to the platen 12.
  • the second elevating unit 75 elevates and lowers the second base member 70 with a stroke length larger than the stroke length of the first base member 60 by the first elevating unit 65.
  • the second elevating unit 75 includes a fluid pressure cylinder unit, a ball screw unit, and the like installed on the lower surface of the main plate 71.
  • the second elevating unit 75 is installed on the lower surface of the main plate 71 through the opening 60 a of the first base member 60.
  • the second lifting / lowering unit 75 is configured to be able to lift and lower the second base member 70 between the raised position shown in FIG. 8C and the lowered position shown in FIGS. 8A and 8B.
  • the support pin VP1 passes through the support surface 10s through the first insertion hole V1, and supports the back surfaces of the substrates W1 and W2 so that the substrates W1 and W2 rise by a predetermined height from the support surface 10s.
  • the support pin VP1 is extracted from the first insertion hole V1, and the substrates W1 and W2 are placed on the support surface 10s.
  • the second base member 70 further includes a plurality of positioning pins VP2 for positioning the substrates W1, W2 with respect to the support regions S1, S2 with a predetermined accuracy when placing the substrates W1, W2 on the support surface 10s.
  • the plurality of positioning pins VP2 are disposed at positions corresponding to the plurality of second insertion holes V2 provided in the support surface 10s.
  • the plurality of positioning pins VP2 are erected at predetermined positions on the main plate 71 and the sub plate 72, respectively.
  • the axial length of each positioning pin VP2 is set so that the height of the top is constant.
  • the positioning pin VP ⁇ b> 2 arranged on the main plate 71 is installed on the main plate 71 via the support base 74.
  • the height of the support pedestal 74 is set such that the top of the positioning pin VP2 disposed on the main plate 71 has the same height as the positioning pin VP2 disposed on the sub-plate 72.
  • the positioning pin VP2 moves up and down between the raised position and the lowered position simultaneously with the support pin VP1 by driving the second raising / lowering unit 75.
  • the axial length of the positioning pin VP2 is set so that the top of the positioning pin VP2 is positioned above the top of the support pin VP1.
  • a block 73 having an inclined surface 73a capable of guiding the peripheral portions of the substrates W1 and W2 to the support regions S1 and S2 is attached to the top of each positioning pin VP2.
  • the substrate lifting mechanism described above may be omitted as necessary.
  • one of the support pin VP1 and the positioning pin VP2 may be omitted.
  • the inside of the vacuum chamber 211 is maintained in a predetermined reduced pressure atmosphere, and the substrate holding device 100 maintains the platen 12 in a horizontal posture.
  • the driving unit 50 of the substrate holding apparatus 100 causes the first base member 60 and the second base member 70 to stand by at the raised position by the first and second elevating units 65 and 75.
  • the first to third clamp portions C1 to C3 are moved to the non-clamping position by pushing up the operation shafts CP1 to CP3, and the support pin VP1 and the positioning pin VP2 protrude above the support surface 10s.
  • the two substrates W1 and W2 are placed on the support pins VP1 on the support areas S1 and S2 of the support surface 10s of the platen 12 by a transfer robot (not shown) via a gate valve (not shown).
  • a transfer robot not shown
  • a gate valve not shown
  • the substrates W1 and W2 receive a guide action toward the support regions S1 and S2 by the inclined surface 73a of the block 73 provided at the tip of the positioning pin VP2.
  • a predetermined alignment accuracy of the substrates W1, W2 with respect to the support regions S1, S2 is ensured.
  • the drive unit 50 of the substrate holding apparatus 100 moves the second base member 70 from the raised position to the lowered position by the second lifting / lowering unit 75.
  • the support pin VP1 and the positioning pin PV2 are pulled down from the support surface 10s, and the substrates W1 and W2 are simultaneously disposed on the support regions S1 and S2.
  • the drive unit 50 of the substrate holding apparatus 100 moves the first base member 60 from the raised position to the lowered position by the first lifting / lowering unit 65.
  • the hook portions 21 and 31 of the first to third clamp portions C1 to C3 move from the non-clamping position to the clamping position, so that the peripheral edge portions of the substrates W1 and W2 are held in the support regions S1 and S2.
  • the hook portions 21 of the first and second clamp portions C1 and C2 move to the clamp position with movement substantially parallel to the support surface 10s, so that the substrates W1 and W2 move to the support regions S1 and S2. Even when a positional deviation occurs, the substrates W1 and W2 are pressed toward the support areas S1 and S2 in the process of moving the hook portion 21 to the clamp position, so that the desired alignment accuracy is ensured. .
  • the hook portion 31 of the third clamp portion C3 moves to the clamp position with a movement approaching the support surface 10s from above the support surface 10s, and thus warps the peripheral portions (corners, etc.) of the substrates W1 and W2. Even when the above occurs, the warpage can be corrected and the substrates W1 and W2 can be held with high flatness.
  • the third clamp part C3 is configured to hold the peripheral edges of the substrates W1 and W2 behind the operation of the first and second clamp parts C1 and C2, the first and second clamp parts C3 and C2 are held as described above. The appropriate holding operation of the substrates W1, W2 by the two clamp portions C1, C2 can be stably ensured.
  • the substrate holding apparatus 100 raises the platen 12 from the horizontal posture to the vertical posture via the rotation mechanism unit 13 (see FIG. 2B). Then, a predetermined film forming process is performed on the substrates W1 and W2 on the support surface 10s facing the target unit 212.
  • the substrates W1 and W2 are stably held on the support surface 10s by the first to third clamp portions C1 to C3, so that they are prevented from falling off from the support regions S1 and S2.
  • the plurality of clamp portions first clamp portions C1
  • the plurality of substrates W1 and W2 can be stably held.
  • the relative position between the substrates W1 and W2 can be stably maintained, and the positional accuracy of the substrates W1 and W2 with respect to the support regions S1 and S2 can be ensured. For this reason, high mask accuracy can be maintained even when a mask film is formed.
  • the substrate holding apparatus 100 converts the platen 12 from a vertical posture to a horizontal posture. Then, the substrate holding apparatus 100 sequentially raises the first base member 60 and the second base member 70 in the reverse operation (in the order of FIGS. 8A to 8C). Thus, after the holding operation of the substrates W1 and W2 by the first to third clamp portions C1 to C3 is released, the substrates W1 and W2 are simultaneously lifted from the support surface 10s by the support pins VP1, and a substrate transfer robot (not shown) To be transferred.
  • FIG. 11 is a cross-sectional view of a main part of the substrate holding device 101 in the present embodiment.
  • portions corresponding to those of the first embodiment described above are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the substrate support 10 in the substrate holding device 101 of the present embodiment has a suction portion 80 that can electrostatically suck the substrates W1 and W2.
  • the attracting unit 80 is an electrostatic chuck mechanism, and is configured to be capable of electrostatically attracting the substrates W1 and W2 on the support surface 10s upon receiving power supply from the controller 90.
  • the adsorption part 80 is typically provided over the entire surface of the support surface 10s. However, the adsorbing portion 80 may be provided in each of the regions corresponding to the support regions S1 and S2 on the support surface 10s. Moreover, the adsorption
  • the attracting unit 80 has a chuck electrode that develops an electrostatic attracting force to the substrate W when a voltage of a predetermined level or higher is applied.
  • the type of electrostatic attraction force is not particularly limited, and typically, Coulomb force, Johnson Rabeck force, or the like is employed.
  • the suction unit 80 is composed of a bipolar electrostatic chuck, and a chuck electrode for a positive electrode and a chuck electrode for a negative electrode are provided in each chuck region. These two chuck electrodes are arranged adjacent to each other so as to face the support surface 10s. Each electrode is protected by an insulating film and contacts the substrates W1 and W2 through the insulating film.
  • suction part 80 may be comprised with a monopolar electrostatic chuck.
  • the size (area), the number of arrays, the array form, and the like of the chuck electrodes are not particularly limited as long as the substrates W1 and W2 can be stably held in the standing posture.
  • the controller 90 is configured to synchronize power supply to and disconnection from each chuck electrode of the suction unit 80. Instead of this, power may be individually supplied to a predetermined chuck electrode. This makes it possible to individually control the adsorption start / release operation by each chuck electrode, so that high flatness can be ensured even for a substrate that is likely to be warped or bent. For example, by controlling the power supply so that the suction operation starts sequentially from the upper edge side to the lower edge side of the substrates W1 and W2, the substrate W can be made to have a desired flatness while utilizing its own weight. It becomes possible to hold it stably.
  • the suction unit 80 receives the power supply from the controller 90 and starts the holding operation of the substrates W1 and W2, and the power supply is cut off to release the holding operation of the substrates W1 and W2.
  • the controller 90 may be configured to apply a reverse voltage to each chuck electrode during the dechuck operation in order to quickly hold the substrates W1 and W2.
  • the substrate holding apparatus 101 of the present embodiment configured as described above, when the substrates W1 and W2 are held, the substrate holding operation by the first to third clamp portions C1 to C3 described above is performed, and then suction is performed. The suction operation of the substrates W1 and W2 by the unit 80 is executed. Thereby, the predetermined alignment accuracy of the substrates W1 and W2 with respect to the support surface 10s is further ensured.
  • the substrate holding apparatus 101 raises the platen 12 from the horizontal posture to the vertical posture via the rotation mechanism unit 13 and then performs predetermined processing on the substrates W1 and W2 on the support surface 10s facing the target unit 212.
  • a film forming process is performed.
  • the substrates W1 and W2 are stably held on the support surface 10s by the holding action by the first to third clamp parts C1 to C3 and the electrostatic attraction action by the suction part 80, and the substrates W1 and W2 are separated from the support areas S1 and S2. Dropping is prevented.
  • the substrate holding device 101 converts the platen 12 from the standing posture to the horizontal posture through the rotation mechanism unit 13.
  • the substrate holding operation by the first to third clamp units C1 to C3 is released in the above-described procedure.

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Abstract

[Problem] To provide a substrate holding device, a substrate holding method, and a film forming device, with which a plurality of substrates can be stably held in a vertical posture. [Solution] A substrate holding device according to one embodiment comprises a substrate support base and a clamp mechanism. The substrate support base includes a support surface and a rotation mechanism unit. The support surface has a plurality of support regions in which a plurality of substrates are individually disposed. The rotation mechanism unit is configured to be capable of erecting the support surface from a horizontal posture to a vertical posture around an axis parallel to the support surface. The clamp mechanism has a plurality of clamp parts. The plurality of clamp parts are disposed along the periphery of the plurality of support regions, and are configured to be capable of holding the peripheral edges of the plurality of substrates. The plurality of clamp parts include a plurality of first clamp parts that are disposed in gap regions between the plurality of support regions, and that are capable of individually holding the peripheral edges of the plurality of substrates.

Description

基板保持装置、基板保持方法及び成膜装置Substrate holding apparatus, substrate holding method, and film forming apparatus
 本発明は、基板を水平姿勢から垂直姿勢に起立させることが可能な基板保持装置、基板保持方法及び成膜装置に関する。 The present invention relates to a substrate holding apparatus, a substrate holding method, and a film forming apparatus capable of raising a substrate from a horizontal posture to a vertical posture.
 成膜装置として、垂直方向に起立したガラス基板の表面に所定の膜を形成する縦型のスパッタ装置が知られている。この種のスパッタ装置は、垂直方向に配置されたターゲットを有する成膜室と、成膜室内において基板を水平姿勢から垂直姿勢に起立させることが可能な基板保持機構とを備えるのが一般的である。 As a film forming apparatus, a vertical sputtering apparatus that forms a predetermined film on the surface of a glass substrate standing in a vertical direction is known. This type of sputtering apparatus generally includes a film formation chamber having a target arranged in a vertical direction, and a substrate holding mechanism capable of raising the substrate from a horizontal posture to a vertical posture in the film formation chamber. is there.
 例えば特許文献1には、成膜室内に水平に搬入された基板をのせる基板保持板と、基板保持板上にのせられた基板をクランプする基板クランプ機構と、基板保持板を起立させる回転機構とを有するスパッタ装置が開示されている。 For example, Patent Document 1 discloses a substrate holding plate for placing a substrate horizontally loaded in a film forming chamber, a substrate clamping mechanism for clamping the substrate placed on the substrate holding plate, and a rotating mechanism for raising the substrate holding plate. Is disclosed.
特開2004-332117号公報JP 2004-332117 A
 近年、生産性向上の観点から、一度に複数の基板に対して同時に成膜処理を行うことが可能なスパッタ装置の開発が進められている。このため、複数の基板をそれぞれ適切に保持しながら、複数の基板を水平姿勢から垂直姿勢へ安定に起立させることができる技術が要求される。 Recently, from the viewpoint of improving productivity, development of a sputtering apparatus capable of simultaneously performing film formation on a plurality of substrates at a time has been underway. Therefore, there is a demand for a technique that can stably stand a plurality of substrates from a horizontal posture to a vertical posture while appropriately holding the plurality of substrates.
 以上のような事情に鑑み、本発明の目的は、複数の基板を垂直な姿勢で安定に保持することができる基板保持装置、基板保持方法及び成膜装置を提供することにある。 In view of the circumstances as described above, an object of the present invention is to provide a substrate holding apparatus, a substrate holding method, and a film forming apparatus that can stably hold a plurality of substrates in a vertical posture.
 上記目的を達成するため、本発明の一形態に係る基板保持装置は、基板支持台と、クランプ機構とを具備する。
 前記基板支持台は、支持面と、回転機構部とを有する。前記支持面は、複数の基板が個々に配置される複数の支持領域を有する。前記回転機構部は、前記支持面に平行な軸まわりに前記支持面を水平姿勢から垂直姿勢に起立させることが可能に構成される。
 前記クランプ機構は、複数のクランプ部を有する。前記複数のクランプ部は、前記複数の支持領域の周囲に沿って配置され、前記複数の基板の周縁部を保持可能に構成される。前記複数のクランプ部は、前記複数の支持領域の間の間隙領域に配置され前記複数の基板の周縁部を個々に保持可能な複数の第1クランプ部を含む。
In order to achieve the above object, a substrate holding apparatus according to an embodiment of the present invention includes a substrate support base and a clamp mechanism.
The substrate support has a support surface and a rotation mechanism. The support surface has a plurality of support regions in which a plurality of substrates are individually arranged. The rotation mechanism unit is configured to be able to erect the support surface from a horizontal posture to a vertical posture around an axis parallel to the support surface.
The clamp mechanism has a plurality of clamp portions. The plurality of clamp portions are arranged along the periphery of the plurality of support regions, and are configured to be able to hold peripheral portions of the plurality of substrates. The plurality of clamp portions include a plurality of first clamp portions that are disposed in gap regions between the plurality of support regions and that can individually hold the peripheral portions of the plurality of substrates.
 上記基板保持機構においては、複数のクランプ部が、複数の支持領域の間の間隙領域に配置された複数の第1クランプ部を含むため、基板間の装置位置を適切に維持しながら複数の基板を垂直姿勢に安定に保持することができる。 In the substrate holding mechanism, since the plurality of clamp portions include the plurality of first clamp portions arranged in the gap regions between the plurality of support regions, the plurality of substrates are maintained while appropriately maintaining the apparatus position between the substrates. Can be stably held in a vertical posture.
 前記複数の支持領域は、前記基板支持台が垂直姿勢のときに上下方向に隣り合う少なくとも2つの支持領域を含んでもよい。 The plurality of support regions may include at least two support regions adjacent in the vertical direction when the substrate support is in a vertical posture.
 前記複数のクランプ部は、前記間隙領域を除く前記複数の支持領域の周囲の周辺領域に配置された複数の第2クランプ部及び複数の第3クランプ部をさらに含んでもよい。
 前記複数の第1及び第2クランプ部は、前記支持面に対して略平行な動きを伴って前記複数の基板の周縁部に対向するフック部を有する。
 前記複数の第3クランプ部は、前記支持面の上方から前記支持面に接近する動きを伴って前記複数の基板の周縁部に対向するフック部を有する。
 上記構成によれば、第1及び第2クランプ部によって基板を支持面に対して所定のアライメント精度で保持することができ、第3クランプ部によって基板の平面度を確保することができる。
The plurality of clamp portions may further include a plurality of second clamp portions and a plurality of third clamp portions disposed in a peripheral region around the plurality of support regions excluding the gap region.
The plurality of first and second clamp portions have hook portions that face the peripheral portions of the plurality of substrates with a movement substantially parallel to the support surface.
The plurality of third clamp portions include a hook portion that opposes the peripheral portions of the plurality of substrates with a movement approaching the support surface from above the support surface.
According to the said structure, a board | substrate can be hold | maintained with a predetermined alignment precision with respect to a support surface by the 1st and 2nd clamp part, and the flatness of a board | substrate can be ensured by a 3rd clamp part.
 前記複数の第1及び第2クランプ部は、前記フック部をクランプ位置に向けて一定曲率の曲線軌道に沿って回転可能に支持する回転支持部をさらに有してもよい。
 一方、前記複数の第3クランプ部は、前記フック部をクランプ位置に向けて、前記複数の第1及び第2クランプ部よりも大きな前記支持面からの最大高さを有する曲線軌道に沿って移動可能に支持するリンク機構部をさらに有してもよい。
The plurality of first and second clamp portions may further include a rotation support portion that rotatably supports the hook portion along a curved track having a certain curvature toward the clamp position.
On the other hand, the plurality of third clamp portions move along a curved track having a maximum height from the support surface that is larger than the plurality of first and second clamp portions, with the hook portions facing the clamp position. You may further have a link mechanism part supported so that it is possible.
 前記複数の第1~第3クランプ部は、前記フック部を前記クランプ位置へ付勢する付勢部材をそれぞれさらに有してもよい。 The plurality of first to third clamp portions may each further include a biasing member that biases the hook portion to the clamp position.
 前記クランプ機構は、前記複数の第1クランプ部及び前記複数の第2クランプ部によって前記複数の基板の周縁部を保持した後、前記複数の第3クランプ部によって前記複数の基板の周縁部を保持するように構成されてもよい。
 これにより、基板に反りが生じている場合においても、基板を支持面上に適切に保持することができる。
The clamp mechanism holds the peripheral portions of the plurality of substrates by the plurality of first clamp portions and the plurality of second clamp portions, and then holds the peripheral portions of the plurality of substrates by the plurality of third clamp portions. It may be configured to.
Thereby, even when the substrate is warped, the substrate can be appropriately held on the support surface.
 前記複数の基板には、典型的には、平面形状が矩形のガラス基板が用いられる。この場合、前記複数の第3クランプ部は、前記複数の第1クランプ部及び前記複数の第2クランプ部よりも前記複数の基板の角部に近い位置に配置されてもよい。
 反り等が比較的生じやすい基板の角部に第3クランプ部を配置することで、基板を適正に保持することができる。
Typically, a glass substrate having a rectangular planar shape is used for the plurality of substrates. In this case, the plurality of third clamp portions may be arranged at positions closer to the corners of the plurality of substrates than the plurality of first clamp portions and the plurality of second clamp portions.
By disposing the third clamp portion at the corner portion of the substrate where warpage or the like is relatively likely to occur, the substrate can be appropriately held.
 前記クランプ機構は、前記基板支持台が水平姿勢の状態にあるときに前記複数のクランプ部をクランプ位置から非クランプ位置へ移動させることが可能な駆動部をさらに有してもよい。
 前記駆動部は、第1ベース部材と、第1昇降ユニットを有する。
 前記第1ベース部材は、前記複数のクランプ部に対応して配置された複数の操作軸を有する。
 前記第1昇降ユニットは、前記複数の操作軸で前記複数のクランプ部を押し上げることで前記複数のクランプ部を前記非クランプ位置へセットする上昇位置と、前記複数の操作軸による前記複数のクランプ部の押し上げを解除することで前記複数のクランプ部を前記クランプ位置へセットする下降位置との間にわたって、前記第1ベース部材を昇降させる。
The clamp mechanism may further include a drive unit capable of moving the plurality of clamp units from the clamp position to the non-clamp position when the substrate support is in a horizontal posture.
The drive unit includes a first base member and a first lifting unit.
The first base member has a plurality of operation shafts arranged corresponding to the plurality of clamp portions.
The first elevating unit includes a raised position for setting the plurality of clamp portions to the non-clamping position by pushing up the plurality of clamp portions by the plurality of operation shafts, and the plurality of clamp portions by the plurality of operation shafts. The first base member is moved up and down between the lowered position where the plurality of clamp portions are set at the clamp position by releasing the push-up.
 前記駆動部は、第2ベース部材と、第2昇降ユニットとをさらに有してもよい。
 前記第2ベース部材は、前記第1ベース部材と平行に配置され、前記支持面を貫通可能な複数の支持ピンを有する。
 前記第2昇降ユニットは、前記複数の支持ピンで前記複数の基板の裏面を支持する上昇位置と、前記複数の支持ピンで支持された前記複数の基板を前記支持面上に配置する下降位置との間にわたって、前記第2ベース部材を昇降させる。
The driving unit may further include a second base member and a second lifting unit.
The second base member has a plurality of support pins that are arranged in parallel with the first base member and can penetrate the support surface.
The second elevating unit includes a raised position for supporting the back surfaces of the plurality of substrates with the plurality of support pins, and a lowered position for arranging the plurality of substrates supported by the plurality of support pins on the support surface. The second base member is moved up and down.
 前記基板支持台は、吸着部をさらに有してもよい。前記吸着部は、前記支持面に設けられ、前記複数の基板を静電的に吸着することが可能に構成される。 The substrate support may further include an adsorption part. The adsorption portion is provided on the support surface and configured to electrostatically adsorb the plurality of substrates.
 本発明の一形態に係る基板保持方法は、
 水平姿勢に維持された支持面上の複数の支持領域に基板を個々に配置し、
 前記複数の支持領域の間の中間領域と、前記中間領域を除く前記複数の支持領域の周辺領域とにそれぞれ配置され、前記支持面に対して略平行な動きを伴って前記基板の周縁部に対向する第1のフック部を有する複数のクランプ部によって、前記基板を保持し、
 前記周辺領域に配置され、前記支持面の上方から前記支持面に接近する動きを伴って前記基板の周縁部に対向する第2のフック部を有する複数のクランプ部によって、前記基板を保持し、
 前記支持面を水平姿勢から垂直姿勢に起立させる。
A substrate holding method according to an aspect of the present invention includes:
Arranging the substrates individually in a plurality of support areas on the support surface maintained in a horizontal position,
The substrate is disposed in an intermediate region between the plurality of support regions and a peripheral region of the plurality of support regions excluding the intermediate region, and moves along a peripheral portion of the substrate with a movement substantially parallel to the support surface. The substrate is held by a plurality of clamp portions having first hook portions facing each other,
The substrate is held by a plurality of clamp portions arranged in the peripheral region and having a second hook portion facing the peripheral edge of the substrate with a movement approaching the support surface from above the support surface,
The support surface is erected from a horizontal posture to a vertical posture.
 本発明の一形態に係る成膜装置は、成膜室と、基板支持台と、クランプ機構とを具備する。
 前記成膜室は、成膜源を有する。
 前記基板支持台は、前記成膜室に配置される。前記基板支持台は、複数の基板が個々に配置される複数の支持領域を有する支持面と、前記支持面に平行な軸まわりに前記支持面を水平姿勢から垂直姿勢に起立させることが可能な回転機構部とを有する。
 前記クランプ機構は、複数のクランプ部を有する。前記複数のクランプ部は、前記複数の支持領域の周囲に沿って配置され、前記複数の基板の周縁部を保持可能に構成される。前記複数のクランプ部は、前記複数の支持領域の間の間隙領域に配置され前記複数の基板の周縁部を個々に保持可能な複数の第1クランプ部を含む。
A film formation apparatus according to one embodiment of the present invention includes a film formation chamber, a substrate support, and a clamp mechanism.
The film formation chamber has a film formation source.
The substrate support is disposed in the film forming chamber. The substrate support base can stand a support surface having a plurality of support regions on which a plurality of substrates are individually arranged, and the support surface from a horizontal posture to a vertical posture around an axis parallel to the support surface. A rotation mechanism.
The clamp mechanism has a plurality of clamp portions. The plurality of clamp portions are arranged along the periphery of the plurality of support regions, and are configured to be able to hold peripheral portions of the plurality of substrates. The plurality of clamp portions include a plurality of first clamp portions that are disposed in gap regions between the plurality of support regions and that can individually hold the peripheral portions of the plurality of substrates.
 以上述べたように、本発明によれば、複数の基板を垂直な姿勢で安定に保持することができる。 As described above, according to the present invention, a plurality of substrates can be stably held in a vertical posture.
本発明の一実施形態に係る基板保持装置の構成を示す概略斜視図である。It is a schematic perspective view which shows the structure of the board | substrate holding apparatus which concerns on one Embodiment of this invention. 上記基板保持装置を備えた成膜装置の概略側面図である。It is a schematic side view of the film-forming apparatus provided with the said board | substrate holding apparatus. 上記基板保持装置における基板支持台の平面図である。It is a top view of the board | substrate support stand in the said board | substrate holding apparatus. 上記基板保持装置における第1及び第2クランプ部の構成を示す基板支持台の要部断面図である。It is principal part sectional drawing of the board | substrate support stand which shows the structure of the 1st and 2nd clamp part in the said board | substrate holding apparatus. 上記基板保持装置における第3クランプ部の構成を示す基板支持台の要部断面図である。It is principal part sectional drawing of the board | substrate support stand which shows the structure of the 3rd clamp part in the said board | substrate holding apparatus. 上記基板保持装置における駆動部の斜視図である。It is a perspective view of the drive part in the said board | substrate holding apparatus. 上記駆動部の平面図である。図8はその動作の一例を示す側面図である。It is a top view of the said drive part. FIG. 8 is a side view showing an example of the operation. 上記駆動部の動作の一例を示す側面図である。It is a side view which shows an example of operation | movement of the said drive part. 上記基板保持装置における支持ピンの要部側面図である。It is a principal part side view of the support pin in the said board | substrate holding apparatus. 上記基板保持装置における位置決めピンの要部側面図である。It is a principal part side view of the positioning pin in the said board | substrate holding apparatus. 上記基板保持装置における吸着部の構成を示す基板支持台の要部断面図である。It is principal part sectional drawing of the board | substrate support stand which shows the structure of the adsorption | suction part in the said board | substrate holding apparatus.
 以下、図面を参照しながら、本発明の実施形態を説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
<第1の実施形態>
 図1は、本発明の一実施形態に係る基板保持装置の構成を示す概略斜視図、図2は上記基板保持装置を備えた成膜装置の概略側面図である。
 なお図においてX軸、Y軸及びZ軸は相互に直交する3軸方向を示しており、X軸及びY軸は水平方向(横方向)、Z軸は垂直方向(縦方向)にそれぞれ対応する。
<First Embodiment>
FIG. 1 is a schematic perspective view showing a configuration of a substrate holding apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic side view of a film forming apparatus provided with the substrate holding apparatus.
In the figure, the X axis, the Y axis, and the Z axis indicate three axial directions orthogonal to each other. The X axis and the Y axis correspond to the horizontal direction (lateral direction), and the Z axis corresponds to the vertical direction (vertical direction). .
[全体構成]
 本実施形態の基板保持装置100は、複数の基板を支持可能な支持面10sを有する基板支持台10を備える。基板支持台10は、筐体11と、支持面10sが上面に形成されたプラテン12と、プラテン12を筐体11に対して回動可能に支持する回転機構部13とを有する。基板保持装置100は、複数の基板として、2枚のガラス基板W1,W2を支持するとともに、後述するクランプ機構を介して各基板W1,W2を支持面10s上に保持することが可能に構成される。
[overall structure]
The substrate holding device 100 according to the present embodiment includes a substrate support 10 having a support surface 10s that can support a plurality of substrates. The substrate support 10 includes a housing 11, a platen 12 having a support surface 10 s formed on the upper surface, and a rotation mechanism unit 13 that supports the platen 12 so as to be rotatable with respect to the housing 11. The substrate holding device 100 is configured to support two glass substrates W1 and W2 as a plurality of substrates and to hold the substrates W1 and W2 on the support surface 10s via a clamp mechanism described later. The
 基板支持台10は、回転機構部13を介して、図2Aに示す水平姿勢から図2Bに示す垂直姿勢にプラテン12(支持面10s)を起立させることが可能に構成される。回転機構部13は、Y軸方向に平行な回転軸131と、プラテン12を回転軸131のまわりに水平姿勢と垂直姿勢との間で回動させる駆動源132とを有する。筐体11は、上記クランプ機構の一部を構成する駆動部50(図2B、図6~図8参照)を収容する。 The substrate support 10 is configured to be able to stand the platen 12 (support surface 10s) from the horizontal posture shown in FIG. 2A to the vertical posture shown in FIG. The rotation mechanism unit 13 includes a rotation shaft 131 that is parallel to the Y-axis direction, and a drive source 132 that rotates the platen 12 around the rotation shaft 131 between a horizontal posture and a vertical posture. The housing 11 accommodates a drive unit 50 (see FIG. 2B and FIGS. 6 to 8) that constitutes a part of the clamp mechanism.
 成膜装置200は、基板保持装置100と、成膜室210と、これらを統括的に制御するコントローラ90とを備える。
 基板保持装置100は、図2A,Bに示すように成膜室210の内部に設置される。成膜室210は、スパッタ室として構成され、真空チャンバ211と、真空チャンバ211の内部に設置された成膜源としてのターゲットユニット212とを有する。
The film forming apparatus 200 includes a substrate holding device 100, a film forming chamber 210, and a controller 90 that comprehensively controls them.
The substrate holding apparatus 100 is installed inside the film forming chamber 210 as shown in FIGS. The film formation chamber 210 is configured as a sputtering chamber, and includes a vacuum chamber 211 and a target unit 212 as a film formation source installed inside the vacuum chamber 211.
 真空チャンバ211は、図示しない真空排気ラインに接続されており、内部を所定の減圧雰囲気に排気あるいは維持することが可能に構成される。ターゲットユニット212は、成膜すべき材料で構成されたターゲット材とこれを支持するバッキングプレートとを含み、マグネトロンスパッタ方式の場合はターゲット材の表面に磁場を形成する磁気回路をさらに含む。図示せずとも、成膜室210はさらに、真空チャンバ211内にスパッタガスや反応性ガスを導入するガス導入ライン、ターゲットユニット212へ所定の電力を供給する電力供給ライン、基板W1,W2の搬入及び搬出用のゲートバルブ等を有する。 The vacuum chamber 211 is connected to a vacuum exhaust line (not shown), and is configured to be able to exhaust or maintain the inside in a predetermined reduced pressure atmosphere. The target unit 212 includes a target material made of a material to be deposited and a backing plate that supports the target material. In the case of the magnetron sputtering method, the target unit 212 further includes a magnetic circuit that forms a magnetic field on the surface of the target material. Although not shown, the film formation chamber 210 further includes a gas introduction line for introducing sputtering gas and reactive gas into the vacuum chamber 211, a power supply line for supplying predetermined power to the target unit 212, and loading of the substrates W1 and W2. And a gate valve for carrying it out.
 ターゲットユニット212は、ターゲット材の表面がYZ平面と平行となるように縦向きに配置され、起立位置に姿勢変換されたプラテン12の支持面10sと所定の間隔をおいてX軸方向に対向する。ターゲット材は、典型的には、支持面10sよりも大きな面積を有する。成膜装置200は、一方の基板W1が下側に、他方の基板W2が上側となるようにプラテン12を起立させた状態で、支持面10s上の各基板W1,W2に所定の成膜処理を施すことが可能に構成される。成膜室210には、基板W1,W2の成膜領域を画定するマスク部材(図示略)が設置されてもよい。 The target unit 212 is arranged vertically so that the surface of the target material is parallel to the YZ plane, and is opposed to the support surface 10s of the platen 12 whose posture is changed to the standing position in the X-axis direction with a predetermined interval. . The target material typically has a larger area than the support surface 10s. The film forming apparatus 200 performs a predetermined film forming process on each of the substrates W1 and W2 on the support surface 10s in a state where the platen 12 is erected so that one substrate W1 is on the lower side and the other substrate W2 is on the upper side. It is possible to apply. In the film forming chamber 210, a mask member (not shown) for defining the film forming regions of the substrates W1 and W2 may be installed.
 基板W1,W2は、典型的には、矩形のガラス基板であるが、これに限られず、ガラス以外のセラミック基板や樹脂基板、金属基板であってもよい。基板W1,W2の成膜面には、金属層や絶縁層を含む各種機能層が予め形成されていてもよい。基板サイズも特に限定されず、支持面10sの大きさや処理枚数に応じて適宜設定可能であり、例えば、G6サイズ(1850mm×1500mm)の半分の大きさの基板が用いられる。 The substrates W1 and W2 are typically rectangular glass substrates, but are not limited thereto, and may be ceramic substrates other than glass, resin substrates, and metal substrates. Various functional layers including a metal layer and an insulating layer may be formed in advance on the film formation surfaces of the substrates W1 and W2. The substrate size is not particularly limited and can be set as appropriate according to the size of the support surface 10s and the number of processed sheets. For example, a substrate having a half size of G6 size (1850 mm × 1500 mm) is used.
[基板支持台]
 図3は、基板支持台10の平面図である。
[Substrate support stand]
FIG. 3 is a plan view of the substrate support 10.
 支持面10sは、矩形の平面形状を有するとともに、典型的には平坦面で形成される。支持面10sは、銅、アルミニウム、ステンレス鋼等の金属材料で構成される。支持面10sは、単一の板材で構成されてもよいし、複数の板材の配列体で構成されてもよい。支持面10sは、基板W1,W2を所定温度に冷却又は加熱することが可能に、冷媒又は温媒が循環可能な循環通路やヒータを内部に有してもよい。 The support surface 10s has a rectangular planar shape and is typically formed as a flat surface. The support surface 10s is made of a metal material such as copper, aluminum, or stainless steel. The support surface 10s may be composed of a single plate material, or may be composed of an array of a plurality of plate materials. The support surface 10s may have therein a circulation passage or a heater through which the refrigerant or the heating medium can circulate so that the substrates W1 and W2 can be cooled or heated to a predetermined temperature.
 支持面10sは、複数(本例では2つ)の基板W1,W2が個々に配置される複数(本例では2つ)の支持領域S1,S2を有する。支持領域S1,S2は、プラテン12が垂直姿勢のときに各々の長辺側の一辺が上下方向に間隔をおいて隣り合うようにレイアウトされる。 The support surface 10s includes a plurality (two in this example) of support areas S1 and S2 on which a plurality (two in this example) of substrates W1 and W2 are individually arranged. The support regions S1 and S2 are laid out so that one side of each long side is adjacent to each other with an interval in the vertical direction when the platen 12 is in a vertical posture.
 支持面10sはさらに、支持領域S1,S2の間に位置する中間領域10Mと、支持領域S1,S2の周囲に位置する周辺領域10C(中間領域10Mを除く)とを有する。各支持領域S1,S2には、支持面10sに対して基板W1,W2を昇降させるための複数の支持ピンVP1(図6~8参照)が挿通可能な複数の第1挿通孔V1が設けられている。中間領域10M及び周辺領域10Cには、支持面10sに対して基板W1,W2を位置決めするための複数の位置決めピンVP2(図6~8参照)が挿通可能な複数の第2挿通孔V2が設けられている。 The support surface 10s further includes an intermediate region 10M positioned between the support regions S1 and S2 and a peripheral region 10C (excluding the intermediate region 10M) positioned around the support regions S1 and S2. Each support region S1, S2 is provided with a plurality of first insertion holes V1 into which a plurality of support pins VP1 (see FIGS. 6 to 8) for raising and lowering the substrates W1, W2 with respect to the support surface 10s can be inserted. ing. A plurality of second insertion holes V2 into which a plurality of positioning pins VP2 (see FIGS. 6 to 8) for positioning the substrates W1 and W2 with respect to the support surface 10s can be inserted in the intermediate region 10M and the peripheral region 10C. It has been.
 第1挿通孔V1は、一方の支持領域S1内に形成された複数(本例では3個)の挿通孔V11と、他方の支持領域S2内に形成された複数(本例では3個)の挿通孔V12とを含む。第2挿通孔V2は、一方の支持領域S1の周囲に沿って形成された複数(本例では10個)の挿通孔V21と、他方の支持領域S2の周囲に沿って形成された複数(本例では10個)の挿通孔V22とを含む。本実施形態では、挿通孔V21,V22は、基板W1,W2の両長辺側には2個ずつ、基板W1,W2の両短辺側には3個ずつ配置される(図3参照)。 The first insertion hole V1 includes a plurality (three in this example) of insertion holes V11 formed in one support region S1 and a plurality (three in this example) of the other support region S2. Insertion hole V12. The second insertion hole V2 includes a plurality (ten in this example) of insertion holes V21 formed along the periphery of the one support region S1 and a plurality of (books) formed along the periphery of the other support region S2. The example includes 10) insertion holes V22. In the present embodiment, two insertion holes V21 and V22 are arranged on both long sides of the substrates W1 and W2, and three on both short sides of the substrates W1 and W2 (see FIG. 3).
[クランプ機構]
 基板保持装置100は、支持面10sに配置された基板W1,W2を保持するためのクランプ機構を備える。クランプ機構は、各支持領域S1,S2の周囲に沿って配置された複数のクランプ部(第1クランプ部C1、第2クランプ部C2及び第3クランプ部C3)と、これらクランプ部を駆動する駆動部50とを有する。各クランプ部は支持領域S1,S2上の基板W1、W2の周縁部を保持可能に構成される。
[Clamp mechanism]
The substrate holding device 100 includes a clamp mechanism for holding the substrates W1 and W2 disposed on the support surface 10s. The clamp mechanism includes a plurality of clamp parts (first clamp part C1, second clamp part C2, and third clamp part C3) disposed along the periphery of the support regions S1 and S2, and a drive for driving these clamp parts. Part 50. Each clamp part is comprised so that the peripheral part of board | substrate W1, W2 on support area | region S1, S2 can be hold | maintained.
 図3に示すように、第1クランプ部C1は、2つの支持領域S1,S2の間の中間領域10Mに配置される。第2及び第3クランプ部C2,C3は、支持領域S1,S2の周囲の周辺領域10Cにそれぞれ配置される。 As shown in FIG. 3, the first clamp part C1 is disposed in an intermediate region 10M between the two support regions S1 and S2. The second and third clamp portions C2 and C3 are disposed in the peripheral region 10C around the support regions S1 and S2, respectively.
 第1クランプ部C1は、支持領域S1に配置された基板W1の中間領域10M側の一辺を保持可能な複数のクランプ部C11と、支持領域S2に配置された基板W2の中間領域10M側の一方の長辺を保持可能な複数のクランプ部C12とにより構成される。これらクランプ部C11,C12の位置や数は特に限定されず、本実施形態では、基板W1,W2の上記一方の長辺の両端近傍に、計2個のクランプ部C11及び計4個のクランプ部C12がそれぞれ配置される(図3参照)。以下、個別に説明する場合を除き、クランプ部C11,C12を第1クランプ部C1と総称する。 The first clamp part C1 includes a plurality of clamp parts C11 capable of holding one side on the intermediate area 10M side of the substrate W1 arranged in the support area S1, and one of the substrate W2 arranged on the support area S2 on the intermediate area 10M side. And a plurality of clamp portions C12 that can hold the long side. The positions and number of the clamp portions C11 and C12 are not particularly limited. In the present embodiment, a total of two clamp portions C11 and a total of four clamp portions are provided near both ends of the one long side of the substrates W1 and W2. C12 is arranged (see FIG. 3). Hereinafter, the clamp portions C11 and C12 are collectively referred to as a first clamp portion C1 unless otherwise described.
 第2クランプ部C2は、支持領域S1に配置された基板W1の周辺領域10C側の三辺を保持可能な複数のクランプ部C21と、支持領域S2に配置された基板W2の周辺領域10C側の三辺を保持可能な複数のクランプ部C22とにより構成される。これらクランプ部C21,C22の位置や数は特に限定されず、本実施形態では、基板W1,W2の他方の長辺側には2個ずつ、基板W1,W2の両短辺側には1個ずつ配置される(図3参照)。以下、個別に説明する場合を除き、クランプ部C21,C22を第2クランプ部C2と総称する。 The second clamp portion C2 includes a plurality of clamp portions C21 capable of holding three sides on the peripheral region 10C side of the substrate W1 disposed in the support region S1, and the peripheral region 10C side of the substrate W2 disposed in the support region S2. It comprises a plurality of clamp parts C22 that can hold three sides. The positions and number of the clamp portions C21 and C22 are not particularly limited. In the present embodiment, two pieces are provided on the other long side of the substrates W1 and W2, and one piece is provided on both short sides of the substrates W1 and W2. They are arranged one by one (see FIG. 3). Hereinafter, the clamp parts C21 and C22 are generically referred to as a second clamp part C2 unless otherwise described.
 第3クランプ部C3は、支持領域S1に配置された基板W1の周辺領域10C側の三辺を保持可能な複数のクランプ部C31と、支持領域S2に配置された基板W2の周辺領域10C側の三辺を保持可能な複数のクランプ部C32とにより構成される。これらクランプ部C31,C32の位置や数は特に限定されず、本実施形態では、基板W1,W2の角部(四隅部)の近傍にそれぞれ1個ずつ配置される(図3参照)。以下、個別に説明する場合を除き、クランプ部C31,C32を第3クランプ部C3と総称する。 The third clamp portion C3 includes a plurality of clamp portions C31 capable of holding three sides on the peripheral region 10C side of the substrate W1 disposed in the support region S1, and the peripheral region 10C side of the substrate W2 disposed in the support region S2. It comprises a plurality of clamp parts C32 that can hold three sides. The positions and number of the clamp parts C31 and C32 are not particularly limited, and in the present embodiment, one each is arranged in the vicinity of the corners (four corners) of the substrates W1 and W2 (see FIG. 3). Hereinafter, the clamp parts C31 and C32 are collectively referred to as a third clamp part C3 unless otherwise described.
 (第1及び第2クランプ部)
 第1及び第2クランプ部C1(C11,C12),C2(C21,C22)は、支持面10sに対して略平行な動きを伴って基板W1,W2の周縁部に対向するフック部21(図4参照)を有する。これにより、支持領域S1,S2に対して基板W1,W2が位置ずれを伴って載置された場合でも、第1及び第2クランプ部C1,C2によるクランプ動作の過程で基板W1,W2を位置ずれが解消する方向に移動させることができるため、クランプ時において基板W1,W2の所定のアライメント精度が確保される。
(First and second clamp part)
The first and second clamp portions C1 (C11, C12), C2 (C21, C22) are hook portions 21 (see FIG. 5) that face the peripheral portions of the substrates W1, W2 with movement substantially parallel to the support surface 10s. 4). As a result, even when the substrates W1 and W2 are placed with positional displacement with respect to the support regions S1 and S2, the substrates W1 and W2 are positioned in the process of the clamping operation by the first and second clamp portions C1 and C2. Since it can be moved in a direction in which the deviation is eliminated, a predetermined alignment accuracy of the substrates W1, W2 is ensured at the time of clamping.
 ここで、「支持面10sに対して略平行な動き」とは、支持面10sに対して平行な動きだけでなく、支持面10sに対して実質的に平行な動きを意味する。実質的に平行な動きとは、直線的あるいは曲線的な軌道に沿ったフック部21の動きを含む。 Here, “movement substantially parallel to the support surface 10s” means not only movement parallel to the support surface 10s but also movement substantially parallel to the support surface 10s. The substantially parallel movement includes movement of the hook portion 21 along a linear or curved path.
 第1及び第2クランプ部C1,C2の一構成例を図4に示す。図4は、第1及び第2クランプ部C1,C2の構成を示す基板支持台10の要部断面図である。 FIG. 4 shows a configuration example of the first and second clamp portions C1 and C2. FIG. 4 is a cross-sectional view of the main part of the substrate support 10 showing the configuration of the first and second clamp parts C1 and C2.
 第1及び第2クランプ部C1,C2は、図4に示すように、支持面10sから突出するフック部21を先端部に有するフック部材20と、フック部21をクランプ位置に向けて一定曲率の曲線軌道に沿って回動させることが可能にフック部材20を支持する回転支持部23とをそれぞれ有する。 As shown in FIG. 4, the first and second clamp parts C1 and C2 have a hook member 20 having a hook part 21 protruding from the support surface 10s at the tip part, and a constant curvature with the hook part 21 facing the clamp position. Each has a rotation support portion 23 that supports the hook member 20 so as to be able to be rotated along a curved track.
 フック部材20は、フック部21と基端部22とを有するZ軸方向に長手の金属製の板材で構成される。フック部21は、支持面10sに形成された開口部10gを介して支持面10sから突出するフック部材20の一端を支持領域S1,S2側に延出させることで形成される。基端部22は、フック部材20の他端をフック部21と同一の方向に延出させることで形成される。フック部材20は、回転支持部23を介してプラテン12に支持されるとともに、基端部22に対する操作軸CP1,CP2(後述)の押し上げ操作を受けてクランプ位置から非クランプ位置へ回動可能に構成される。 The hook member 20 is composed of a metal plate material that is long in the Z-axis direction and has a hook portion 21 and a base end portion 22. The hook portion 21 is formed by extending one end of the hook member 20 protruding from the support surface 10s to the support regions S1 and S2 side through the opening 10g formed in the support surface 10s. The base end portion 22 is formed by extending the other end of the hook member 20 in the same direction as the hook portion 21. The hook member 20 is supported by the platen 12 via the rotation support portion 23, and can be rotated from the clamp position to the non-clamp position by receiving a push-up operation of operation shafts CP1 and CP2 (described later) with respect to the base end portion 22. Composed.
 フック部21の非クランプ位置は、支持領域S1,S2上の基板W1,W2の周縁部と支持面10sに平行な方向に対向する位置に設定される(図4参照)。これにより、支持面10sに略平行な動きを伴ってフック部21を基板W1,W2の周縁部と支持面10sに垂直な方向に対向するクランプ位置へ移動させることができる。 The unclamping position of the hook portion 21 is set to a position facing the peripheral portions of the substrates W1 and W2 on the support regions S1 and S2 in a direction parallel to the support surface 10s (see FIG. 4). Thereby, the hook part 21 can be moved to the clamp position which opposes the peripheral part of board | substrate W1, W2 and the direction perpendicular | vertical to the support surface 10s with the movement substantially parallel to the support surface 10s.
 回転支持部23は、フック部材20を貫通する回転軸231と、回転軸231とプラテン12との間を連結する連結部材232とを有し、フック部21が図4において実線で示すクランプ位置と、図4において二点鎖線で示す非クランプ位置との間を回動可能に支持する。回転支持部23によるフック部材20の軸支位置は特に限定されないが、フック部21の回動軌跡が支持面10sに対してできるだけ平行となる位置に設定されるのが好ましい。これにより、フック部材20の回動角度範囲を小さく抑えつつ、フック部21のクランプ位置への移動過程における基板W1,W2の位置の微調整が可能となる。 The rotation support portion 23 includes a rotation shaft 231 that penetrates the hook member 20 and a connecting member 232 that connects the rotation shaft 231 and the platen 12, and the hook portion 21 has a clamping position indicated by a solid line in FIG. 4. 4 is supported so as to be rotatable between the unclamping position indicated by a two-dot chain line in FIG. The pivot support position of the hook member 20 by the rotation support portion 23 is not particularly limited, but it is preferable that the rotation locus of the hook portion 21 be set to a position as parallel as possible to the support surface 10s. Accordingly, it is possible to finely adjust the positions of the substrates W1 and W2 in the process of moving the hook portion 21 to the clamp position while keeping the rotation angle range of the hook member 20 small.
 クランプ位置において、フック部21は、支持領域S1,S2に載置された基板W1,W2の周縁部の直上に僅かな隙間をおいて対向し、支持面10sからの離脱を阻止可能に基板W1,W2を保持する。非クランプ位置において、フック部21は、支持面10sに対する基板W1,W2の昇降動作を阻害しないように、支持領域S1、S2に載置された基板W1,W2の周縁部よりも外側に退避する。 At the clamp position, the hook portion 21 faces the substrate W1 and W2 placed on the support regions S1 and S2 with a slight gap immediately above the peripheral edge portions of the substrate W1 and W2, and can be prevented from being detached from the support surface 10s. , W2 are held. In the non-clamping position, the hook portion 21 retracts to the outside of the peripheral portions of the substrates W1 and W2 placed in the support regions S1 and S2 so as not to hinder the lifting and lowering operation of the substrates W1 and W2 with respect to the support surface 10s. .
 第1及び第2クランプ部C1,C2は、フック部21をクランプ位置へ付勢する付勢部材24をそれぞれさらに有する。本実施形態において付勢部材24は、プラテン12とフック部材20との間に取り付けられたコイルバネで構成されるが、これに限られず、例えば回転支持部23の回転軸231の周囲に取り付けられたつる巻バネ等で構成されてもよい。付勢部材24によって、フック部21は常時クランプ位置へ付勢されるため、プラテン12の姿勢によらずに基板W1,W2の保持操作を維持することができる。 1st and 2nd clamp part C1, C2 has further the urging | biasing member 24 which urges | biases the hook part 21 to a clamp position, respectively. In the present embodiment, the urging member 24 is constituted by a coil spring attached between the platen 12 and the hook member 20, but is not limited thereto, and is attached, for example, around the rotation shaft 231 of the rotation support portion 23. You may comprise a helical spring etc. Since the hook portion 21 is constantly urged to the clamp position by the urging member 24, the holding operation of the substrates W1 and W2 can be maintained regardless of the posture of the platen 12.
 なお、支持領域S1,S2には、基板W1,W2を多点で支持するための複数の突起部10dが設置される。突起部10dの位置や数は特に限定されないが、典型的には、クランプ部C1~C3による基板Wのクランプ位置とはオフセットした位置に配置される。突起部10dは、基板W1,W2の裏面(非成膜面)と支持面10sとの間に所定の間隙を形成するためのものであるが、必要に応じて省略されてもよい。 In the support areas S1 and S2, a plurality of protrusions 10d for supporting the substrates W1 and W2 at multiple points are installed. The position and number of the protrusions 10d are not particularly limited, but typically, the protrusions 10d are arranged at positions offset from the clamp positions of the substrate W by the clamp parts C1 to C3. The protrusion 10d is for forming a predetermined gap between the back surfaces (non-film-forming surfaces) of the substrates W1 and W2 and the support surface 10s, but may be omitted as necessary.
 (第3クランプ部)
 一方、第3クランプ部C3(C31,C32)は、支持面10sの上方から支持面10sに接近する動きを伴って基板W1,W2の周縁部に対向するフック部31(図5参照)を有する。これにより、支持領域S1,S2に載置された基板W1,W2の周縁部が反り上がっている場合においても、第3クランプ部C3によるクランプ動作の過程で当該周縁部の反りを矯正することができるため、クランプ時において当該周縁部の高い平面度が確保される。
(Third clamp part)
On the other hand, the third clamp part C3 (C31, C32) has a hook part 31 (see FIG. 5) facing the peripheral part of the substrates W1, W2 with a movement approaching the support surface 10s from above the support surface 10s. . Thereby, even when the peripheral edge portions of the substrates W1 and W2 placed on the support regions S1 and S2 are warped, the warpage of the peripheral edge portion can be corrected in the process of the clamping operation by the third clamp portion C3. Therefore, high flatness of the peripheral edge portion is ensured at the time of clamping.
 基板W1,W2の周縁部の反りは、角部(四隅部)においてより生じやすい傾向にある。このため、第3クランプ部C3は、第1及び第2クランプ部C1,C2よりも基板W1,W2の角部に近い位置に配置されるのが好ましい。 The warpage of the peripheral portions of the substrates W1 and W2 tends to occur more easily at the corners (four corners). For this reason, it is preferable that the third clamp part C3 is disposed at a position closer to the corners of the substrates W1 and W2 than the first and second clamp parts C1 and C2.
 第3クランプ部C3の一構成例を図5に示す。図5は、第3クランプ部C3の構成を示す基板支持台10の要部断面図である。 One structural example of the third clamp part C3 is shown in FIG. FIG. 5 is a cross-sectional view of the main part of the substrate support 10 showing the configuration of the third clamp part C3.
 第3クランプ部C3は、図5に示すように、支持面10sから突出するフック部31を先端部に有するフック部材30と、フック部31をクランプ位置に向けて、第1及び第2クランプ部C1,C2よりも大きな支持面10sからの最大高さ(h)を有する曲線軌道に沿って移動させることが可能にフック部材30を支持するリンク機構部33とを有する。 As shown in FIG. 5, the third clamp part C3 includes a hook member 30 having a hook part 31 protruding from the support surface 10s at a tip part, and the first and second clamp parts with the hook part 31 directed to a clamp position. And a link mechanism portion 33 that supports the hook member 30 so as to be movable along a curved track having a maximum height (h) from the support surface 10s larger than C1 and C2.
 フック部材30は、フック部31と基端部32とを有するZ軸方向に長手の金属製の板材で構成される。フック部31は、支持面10sに形成された開口部10gを介して支持面10sから突出するフック部材30の一端を支持領域S1,S2側に延出させることで形成される。基端部32は、フック部材30の他端をフック部31と同一の方向に延出させることで形成される。フック部材30は、リンク機構部33を介してプラテン12に支持されるとともに、基端部32に対する操作軸CP3(後述)の押し上げ操作を受けてクランプ位置から非クランプ位置へ移動可能に構成される。 The hook member 30 is formed of a metal plate material that has a hook portion 31 and a base end portion 32 and is long in the Z-axis direction. The hook portion 31 is formed by extending one end of the hook member 30 protruding from the support surface 10s to the support regions S1 and S2 side through the opening 10g formed in the support surface 10s. The base end portion 32 is formed by extending the other end of the hook member 30 in the same direction as the hook portion 31. The hook member 30 is supported by the platen 12 via the link mechanism 33, and is configured to be movable from the clamp position to the non-clamp position in response to a push-up operation of an operation shaft CP3 (described later) with respect to the base end portion 32. .
 ここで、第3クランプ部C3の非クランプ位置におけるフック部31の支持面10sからの高さは、第1及び第2クランプ部C1,C2の非クランプ位置におけるフック部21の支持面10sからの高さよりも大きく設定される(図4,5参照)。これにより、フック部31をクランプ位置に向けて、第1及び第2クランプ部C1,C2よりも大きな支持面10sからの最大高さ(h)を有する曲線軌道に沿って移動させることができる。その結果、支持面10sの上方から支持面10sに接近する動きを伴ってフック部31を基板W1,W2の周縁部と対向するクランプ位置へ移動させることができる。 Here, the height from the support surface 10s of the hook part 31 at the non-clamping position of the third clamp part C3 is from the support surface 10s of the hook part 21 at the non-clamping position of the first and second clamp parts C1 and C2. It is set larger than the height (see FIGS. 4 and 5). Thereby, the hook part 31 can be moved toward the clamp position along a curved track having a maximum height (h) from the support surface 10s larger than the first and second clamp parts C1 and C2. As a result, the hook part 31 can be moved from the upper side of the support surface 10 s to the clamp position facing the peripheral parts of the substrates W <b> 1 and W <b> 2 with a movement approaching the support surface 10 s.
 リンク機構部33は、2本のリンク部材331,332を有し、これらリンク部材331,332の両端をプラテン12及びフック部材30に回転可能に連結した四節回転機構で構成される。リンク機構部33は、フック部31が図5において実線で示すクランプ位置と、図5において二点鎖線で示す非クランプ位置との間を移動可能に支持する。リンク機構部33を構成するリンク部材331,332の位置や長さは特に限定されないが、想定される基板W1,W2の周縁部の反りよりも高い位置でフック部31が当該周縁部の直上を通過することが可能な位置や長さに設定されるのが好ましい。 The link mechanism unit 33 includes two link members 331 and 332, and includes a four-bar rotation mechanism in which both ends of the link members 331 and 332 are rotatably connected to the platen 12 and the hook member 30. The link mechanism portion 33 supports the hook portion 31 so as to be movable between a clamping position indicated by a solid line in FIG. 5 and an unclamping position indicated by a two-dot chain line in FIG. 5. The position and length of the link members 331 and 332 constituting the link mechanism portion 33 are not particularly limited, but the hook portion 31 is located directly above the peripheral edge at a position higher than the assumed warpage of the peripheral edge of the substrates W1 and W2. It is preferable to set the position and the length that can be passed.
 クランプ位置において、フック部31は、支持領域S1,S2に載置された基板W1,W2の周縁部の直上に僅かな隙間をおいて対向し、支持面10sからの離脱を阻止可能に基板W1,W2を保持する。非クランプ位置において、フック部31は、支持面10sに対する基板W1,W2の昇降動作を阻害しないように、支持領域S1、S2に載置された基板W1,W2の周縁部よりも外側に退避する。 At the clamp position, the hook portion 31 faces the substrate W1 and W2 placed on the support areas S1 and S2 with a slight gap immediately above the peripheral edge portions, and can be prevented from being detached from the support surface 10s. , W2 are held. At the non-clamping position, the hook portion 31 retracts to the outside of the peripheral portions of the substrates W1 and W2 placed on the support regions S1 and S2 so as not to hinder the lifting and lowering operations of the substrates W1 and W2 with respect to the support surface 10s. .
 第3クランプ部C3は、フック部31をクランプ位置へ付勢する付勢部材34をさらに有する。本実施形態において付勢部材24は、プラテン12とフック部材20との間に取り付けられたコイルバネで構成されるが、これに限られず、例えばリンク機構部33の任意の回転軸の周囲に取り付けられたつる巻バネ等で構成されてもよい。付勢部材34によって、フック部31は常時クランプ位置へ付勢されるため、プラテン12の姿勢によらずに基板W1,W2の保持操作を維持することができる。 The third clamp part C3 further includes a biasing member 34 that biases the hook part 31 to the clamp position. In the present embodiment, the urging member 24 is configured by a coil spring attached between the platen 12 and the hook member 20, but is not limited thereto, and is attached, for example, around an arbitrary rotation shaft of the link mechanism 33. You may comprise a helical spring etc. Since the hook portion 31 is constantly urged to the clamp position by the urging member 34, the holding operation of the substrates W1 and W2 can be maintained regardless of the posture of the platen 12.
 (駆動部)
 続いて、駆動部50の詳細について説明する。図6は駆動部50の斜視図、図7はその平面図、図8はその動作の一例を示す側面図である。
(Drive part)
Next, details of the drive unit 50 will be described. 6 is a perspective view of the drive unit 50, FIG. 7 is a plan view thereof, and FIG. 8 is a side view showing an example of the operation thereof.
 駆動部50は、プラテン12が水平姿勢の状態にあるときに、第1~第3クランプ部C1~C3をクランプ位置から非クランプ位置へ移動させることが可能に構成される。本実施形態において駆動部50は、クランプ機構における駆動装置として、第1ベース部材60と、第1昇降ユニット65とを有する。 The drive unit 50 is configured to be able to move the first to third clamp units C1 to C3 from the clamp position to the non-clamp position when the platen 12 is in a horizontal posture. In this embodiment, the drive part 50 has the 1st base member 60 and the 1st raising / lowering unit 65 as a drive device in a clamp mechanism.
 第1ベース部材60は、筐体11(図1参照)に収容されるとともに、水平姿勢の状態にあるプラテン12と上下方向に対向する位置に設置される。第1ベース部材60は、第1クランプ部C1、第2クランプ部C2及び第3クランプ部C3にそれぞれ対応して配置された複数の操作軸CP1、CP2及びCP3を有する。操作軸CP1~CP3は、第1ベース部材60の一方の主面(上面)にZ軸方向に平行に立設された軸状部材であり、本実施形態において操作軸CP1~CP3の軸長はそれぞれ同一とされる。 The first base member 60 is housed in the housing 11 (see FIG. 1) and is installed at a position facing the platen 12 in the horizontal posture in the vertical direction. The first base member 60 has a plurality of operation axes CP1, CP2, and CP3 that are disposed in correspondence with the first clamp part C1, the second clamp part C2, and the third clamp part C3, respectively. The operation shafts CP1 to CP3 are shaft-like members erected in parallel to the Z-axis direction on one main surface (upper surface) of the first base member 60. In this embodiment, the shaft lengths of the operation shafts CP1 to CP3 are Each is the same.
 第1ベース部材60は、面内に開口部60aを有する平面形状が矩形の金属製の枠体で構成される。各操作軸CP1~CP3は、直上の各クランプ部C1~C3を構成するフック部材20,30の基端部22,32とZ軸方向に対向する位置に配置される。例えば、第1クランプ部C1に対応する操作軸CP1は、第1ベース部材60の各長辺の中央部から内方に向かって延びる中間領域に配置され、第2及び第3クランプ部に対応する操作軸CP2,CP3は、第1ベース部材60の周辺領域62にそれぞれ配置される。 The first base member 60 is composed of a metal frame having a rectangular planar shape having an opening 60a in the plane. The operation axes CP1 to CP3 are arranged at positions facing the base end portions 22 and 32 of the hook members 20 and 30 constituting the clamp portions C1 to C3 directly above in the Z-axis direction. For example, the operation shaft CP1 corresponding to the first clamp portion C1 is disposed in an intermediate region extending inward from the central portion of each long side of the first base member 60, and corresponds to the second and third clamp portions. The operation axes CP <b> 2 and CP <b> 3 are disposed in the peripheral region 62 of the first base member 60, respectively.
 第1昇降ユニット65は、筐体11に支持され、プラテン12に対して第1ベース部材60をZ軸方向に昇降させることが可能に構成される。第1昇降ユニット65は、第1ベース部材60の他方の主面(下面)に設置された流体圧シリンダユニット、ボールネジユニット等で構成される。第1昇降ユニット65の数は単数でもよいし複数であってもよく(本例では2つ)、第1ベース部材60の大きさ等に応じて決定可能である。 The first elevating unit 65 is supported by the housing 11 and configured to be able to raise and lower the first base member 60 with respect to the platen 12 in the Z-axis direction. The first elevating unit 65 includes a fluid pressure cylinder unit, a ball screw unit, and the like installed on the other main surface (lower surface) of the first base member 60. The number of the first elevating units 65 may be singular or plural (two in this example), and can be determined according to the size of the first base member 60 and the like.
 第1昇降ユニット65は、図8B,Cに示す上昇位置と図8Aに示す下降位置との間にわたって、第1ベース部材60を昇降させることが可能に構成される。上昇位置では、操作軸CP1~CP3で第1~第3クランプ部C1~C3を押し上げることで、第1~第3クランプ部C1~C3を非クランプ位置へセットする。下降位置では、操作軸CP1~CP3による第1~第3クランプ部C1~C3の押し上げを解除することで、第1~第3クランプ部C1~C3をクランプ位置へセットする。 The first elevating unit 65 is configured to be able to raise and lower the first base member 60 between the raised position shown in FIGS. 8B and 8C and the lowered position shown in FIG. 8A. In the raised position, the first to third clamp parts C1 to C3 are pushed up by the operation axes CP1 to CP3 to set the first to third clamp parts C1 to C3 to the non-clamp position. In the lowered position, the first to third clamp portions C1 to C3 are set to the clamp positions by releasing the push-up of the first to third clamp portions C1 to C3 by the operation shafts CP1 to CP3.
 ここで、例えば基板W1、W2の周縁角部に反りが生じている状態で第3クランプ部C3による保持動作が先行すると、第3クランプ部C3による反りの矯正操作の反作用として、基板W1,W2の他の部位が浮き上がり、第1及び第2クランプ部C1,C2によって基板W1,W2を適切に保持することができなくなるおそれがある。 Here, for example, if the holding operation by the third clamp part C3 precedes in the state where the peripheral corners of the substrates W1 and W2 are warped, the reaction of the correction operation of the warp by the third clamp part C3 is the substrate W1, W2. There is a possibility that the other portions are lifted and the substrates W1 and W2 cannot be properly held by the first and second clamp portions C1 and C2.
 そこで本実施形態における駆動部50は、第1及び第2クランプ部C1,C2によって基板W1,W2の周縁部を保持した後、第3クランプ部C3によって基板W1,W2の周縁部を保持するように構成される。これにより、基板W1,W2の周縁角部に反りが生じている場合においても、すべてのクランプ部C1~C3によって基板W1,W2の周縁部を支持面10sに対して適正に保持することが可能となる。 Therefore, the drive unit 50 in the present embodiment holds the peripheral portions of the substrates W1, W2 by the first and second clamp portions C1, C2, and then holds the peripheral portions of the substrates W1, W2 by the third clamp portion C3. Configured. Accordingly, even when the peripheral corner portions of the substrates W1 and W2 are warped, the peripheral portions of the substrates W1 and W2 can be properly held with respect to the support surface 10s by all the clamp portions C1 to C3. It becomes.
このような構成を実現するための構造は特に限定されず、本実施形態では、図4及び図5に示すように、第1及び第2クランプ部C1,C2を構成するフック部材20の基端部22が、第3クランプ部C3を構成するフック部材30の基端部32よりも下方(駆動部50側)へ突出した形状を有する。これにより、第1ベース部材60が上昇位置から下降位置へ移動する際、第1及び第2クランプ部C1,C2のフック部21を非クランプ位置からクランプ位置へ移動させるのに必要な操作軸CP1,CP2のストローク量H1(図4参照)よりも、第3クランプ部C3のフック部31を非クランプ位置からクランプ位置へ移動させるのに必要な操作軸CP3のストローク量H3(図5参照)を大きくすることができる。 The structure for realizing such a configuration is not particularly limited. In the present embodiment, as shown in FIGS. 4 and 5, the base end of the hook member 20 constituting the first and second clamp portions C1 and C2 is used. The portion 22 has a shape that protrudes downward (on the drive portion 50 side) from the base end portion 32 of the hook member 30 constituting the third clamp portion C3. Thus, when the first base member 60 moves from the raised position to the lowered position, the operation axis CP1 required to move the hook portions 21 of the first and second clamp portions C1 and C2 from the non-clamp position to the clamp position. , CP2 stroke amount H3 (see FIG. 5) of the operating shaft CP3 required to move the hook portion 31 of the third clamp portion C3 from the non-clamping position to the clamping position rather than the stroke amount H1 (see FIG. 4) of CP2. Can be bigger.
[基板昇降機構]
 駆動部50は、さらに、プラテン12の支持面10sに対して基板W1,W2を昇降させる基板昇降機構を有する。すなわち、駆動部50は、支持面10sを貫通可能な複数の支持ピンVP1を有する第2ベース部材70と、第2ベース部材70を昇降させる第2昇降ユニット75とを有する。
[Substrate lifting mechanism]
The drive unit 50 further includes a substrate lifting mechanism that lifts and lowers the substrates W1 and W2 with respect to the support surface 10s of the platen 12. That is, the drive unit 50 includes a second base member 70 having a plurality of support pins VP1 that can penetrate the support surface 10s, and a second elevating unit 75 that raises and lowers the second base member 70.
 第2ベース部材70は、第1ベース部材60と平行に配置された概略矩形のメインプレート71と、メインプレート71の四隅に配置された4つのサブプレート72とを有する。本実施形態において第2ベース部材70は、第1ベース部材60の直上に配置される(図6,7参照)。なお理解を容易にするため、図7においては第2ベース部材70を斜線で示す。 The second base member 70 has a substantially rectangular main plate 71 arranged in parallel with the first base member 60 and four sub-plates 72 arranged at the four corners of the main plate 71. In the present embodiment, the second base member 70 is disposed immediately above the first base member 60 (see FIGS. 6 and 7). In order to facilitate understanding, the second base member 70 is indicated by hatching in FIG.
 各サブプレート72は、メインプレート71に対して平行に配置され、メインプレート71の四隅上面に対して適宜の高さの連結具を介して一体的に固定される。メインプレート71及びサブプレート72は、水平姿勢にあるプラテン12の支持面10sの直下に位置し、複数の支持ピンVP1は、プラテン12の支持面10sに設けられた複数の第1挿通孔V1に対応する位置に配置される。 Each sub-plate 72 is arranged in parallel to the main plate 71, and is integrally fixed to the upper surface of the four corners of the main plate 71 via a connector having an appropriate height. The main plate 71 and the sub plate 72 are positioned directly below the support surface 10s of the platen 12 in a horizontal posture, and the plurality of support pins VP1 are inserted into the plurality of first insertion holes V1 provided in the support surface 10s of the platen 12. It is arranged at the corresponding position.
 本実施形態において複数の支持ピンVP1は、メインプレート71及びサブプレート72の所定位置にそれぞれ立設される。この場合、各支持ピンVP1は、頂部の高さが一定となるように各々の軸長が設定される。ここでは、サブプレート72に配置される支持ピンVP1は、メインプレート71に配置される支持ピンVP1よりも、メインプレート71とサブプレート72の高さの差に相当する分だけ短く形成される。基板W1,W2の裏面(非成膜面)に接触する支持ピンVP1の先端部の形状は特に限定されず、例えば図9に示すような曲面形状に形成される。 In the present embodiment, the plurality of support pins VP1 are erected at predetermined positions on the main plate 71 and the sub plate 72, respectively. In this case, the axial length of each support pin VP1 is set so that the height of the top is constant. Here, the support pin VP1 disposed on the sub plate 72 is formed to be shorter than the support pin VP1 disposed on the main plate 71 by an amount corresponding to the difference in height between the main plate 71 and the sub plate 72. The shape of the tip portion of the support pin VP1 that contacts the back surfaces (non-film-forming surfaces) of the substrates W1 and W2 is not particularly limited, and is formed in a curved shape as shown in FIG. 9, for example.
 第2昇降ユニット75は、筐体11に支持され、プラテン12に対して第2ベース部材70をZ軸方向に昇降させることが可能に構成される。第2昇降ユニット75は、第1昇降ユニット65による第1ベース部材60のストローク長よりも大きなストローク長で、第2ベース部材70を昇降させる。第2昇降ユニット75は、メインプレート71の下面に設置された流体圧シリンダユニット、ボールネジユニット等で構成される。第2昇降ユニット75は、第1ベース部材60の開口部60a内を介してメインプレート71の下面に設置される。 The second elevating unit 75 is supported by the housing 11 and configured to be able to raise and lower the second base member 70 in the Z-axis direction with respect to the platen 12. The second elevating unit 75 elevates and lowers the second base member 70 with a stroke length larger than the stroke length of the first base member 60 by the first elevating unit 65. The second elevating unit 75 includes a fluid pressure cylinder unit, a ball screw unit, and the like installed on the lower surface of the main plate 71. The second elevating unit 75 is installed on the lower surface of the main plate 71 through the opening 60 a of the first base member 60.
 第2昇降ユニット75は、図8Cに示す上昇位置と図8A,Bに示す下降位置との間にわたって、第2ベース部材70を昇降させることが可能に構成される。上昇位置では、支持ピンVP1が第1挿通孔V1を介して支持面10sを貫通し、基板W1,W2が支持面10sから所定の高さだけ上昇するように基板W1,W2の裏面を支持する。下降位置では、支持ピンVP1が第1挿通孔V1から抜き取られて、基板W1,W2を支持面10sへ載置する。 The second lifting / lowering unit 75 is configured to be able to lift and lower the second base member 70 between the raised position shown in FIG. 8C and the lowered position shown in FIGS. 8A and 8B. In the raised position, the support pin VP1 passes through the support surface 10s through the first insertion hole V1, and supports the back surfaces of the substrates W1 and W2 so that the substrates W1 and W2 rise by a predetermined height from the support surface 10s. . In the lowered position, the support pin VP1 is extracted from the first insertion hole V1, and the substrates W1 and W2 are placed on the support surface 10s.
 第2ベース部材70はさらに、支持面10sへ基板W1,W2を載置するときに基板W1,W2を支持領域S1,S2に対して所定の精度で位置決めするための複数の位置決めピンVP2を有する。複数の位置決めピンVP2は、支持面10sに設けられた複数の第2挿通孔V2に対応する位置に配置される。 The second base member 70 further includes a plurality of positioning pins VP2 for positioning the substrates W1, W2 with respect to the support regions S1, S2 with a predetermined accuracy when placing the substrates W1, W2 on the support surface 10s. . The plurality of positioning pins VP2 are disposed at positions corresponding to the plurality of second insertion holes V2 provided in the support surface 10s.
 本実施形態において複数の位置決めピンVP2は、メインプレート71及びサブプレート72の所定位置にそれぞれ立設される。この場合、各位置決めピンVP2は、頂部の高さが一定となるように各々の軸長が設定される。ここでは、メインプレート71に配置される位置決めピンVP2は、支持台座74を介してメインプレート71に設置される。支持台座74の高さは、メインプレート71に配置される位置決めピンVP2の頂部が、サブプレート72に配置される位置決めピンVP2と頂部が同一の高さとなるように設定される。 In the present embodiment, the plurality of positioning pins VP2 are erected at predetermined positions on the main plate 71 and the sub plate 72, respectively. In this case, the axial length of each positioning pin VP2 is set so that the height of the top is constant. Here, the positioning pin VP <b> 2 arranged on the main plate 71 is installed on the main plate 71 via the support base 74. The height of the support pedestal 74 is set such that the top of the positioning pin VP2 disposed on the main plate 71 has the same height as the positioning pin VP2 disposed on the sub-plate 72.
 位置決めピンVP2は、第2昇降ユニット75の駆動により、支持ピンVP1と同時に上昇位置と下降位置との間にわたって昇降する。位置決めピンVP2の頂部は、支持ピンVP1の頂部よりも上方に位置するように、位置決めピンVP2の軸長が設定される。さらに、各位置決めピンVP2の頂部には、図10に示すように、基板W1,W2の周縁部を支持領域S1,S2へガイドすることが可能な斜面73aを有するブロック73が取り付けられている。 The positioning pin VP2 moves up and down between the raised position and the lowered position simultaneously with the support pin VP1 by driving the second raising / lowering unit 75. The axial length of the positioning pin VP2 is set so that the top of the positioning pin VP2 is positioned above the top of the support pin VP1. Further, as shown in FIG. 10, a block 73 having an inclined surface 73a capable of guiding the peripheral portions of the substrates W1 and W2 to the support regions S1 and S2 is attached to the top of each positioning pin VP2.
 なお、上述した基板昇降機構は、必要に応じて省略されてもよい。あるいは、支持ピンVP1及び位置決めピンVP2のうち、いずれか一方が省略されてもよい。 Note that the substrate lifting mechanism described above may be omitted as necessary. Alternatively, one of the support pin VP1 and the positioning pin VP2 may be omitted.
[基板保持装置の動作]
 次に、以上のように構成される本実施形態の基板保持装置100の動作について、成膜装置200の動作と併せて説明する。基板保持装置100及び成膜装置200の動作は、コントローラ90によって統括的に制御される。
[Operation of substrate holding device]
Next, the operation of the substrate holding apparatus 100 of the present embodiment configured as described above will be described together with the operation of the film forming apparatus 200. The operations of the substrate holding apparatus 100 and the film forming apparatus 200 are comprehensively controlled by the controller 90.
 成膜に先立って、真空チャンバ211の内部は所定の減圧雰囲気に維持され、基板保持装置100は、プラテン12を水平姿勢に維持する。基板保持装置100の駆動部50は、第1及び第2昇降ユニット65,75によって第1ベース部材60及び第2ベース部材70を上昇位置に待機させる。これにより、第1~第3クランプ部C1~C3は操作軸CP1~CP3の押し上げ操作によって非クランプ位置へ移動し、支持ピンVP1及び位置決めピンVP2は、支持面10sの上方に突出する。 Prior to film formation, the inside of the vacuum chamber 211 is maintained in a predetermined reduced pressure atmosphere, and the substrate holding device 100 maintains the platen 12 in a horizontal posture. The driving unit 50 of the substrate holding apparatus 100 causes the first base member 60 and the second base member 70 to stand by at the raised position by the first and second elevating units 65 and 75. As a result, the first to third clamp portions C1 to C3 are moved to the non-clamping position by pushing up the operation shafts CP1 to CP3, and the support pin VP1 and the positioning pin VP2 protrude above the support surface 10s.
 図示しないゲートバルブを介して、図示しない搬送ロボットによって2枚の基板W1,W2がプラテン12の支持面10sの支持領域S1,S2上の複数の支持ピンVP1にそれぞれ載置される。このとき、基板W1,W2に位置ずれが生じている場合、位置決めピンVP2の先端に設けられたブロック73の斜面73aによって、基板W1,W2が支持領域S1,S2に向かうガイド作用を受ける。これにより、支持領域S1,S2に対する基板W1,W2の所定のアライメント精度が確保される。 The two substrates W1 and W2 are placed on the support pins VP1 on the support areas S1 and S2 of the support surface 10s of the platen 12 by a transfer robot (not shown) via a gate valve (not shown). At this time, if the substrates W1 and W2 are misaligned, the substrates W1 and W2 receive a guide action toward the support regions S1 and S2 by the inclined surface 73a of the block 73 provided at the tip of the positioning pin VP2. Thereby, a predetermined alignment accuracy of the substrates W1, W2 with respect to the support regions S1, S2 is ensured.
 続いて、基板保持装置100の駆動部50は、第2昇降ユニット75によって第2ベース部材70を上昇位置から下降位置へ移動させる。これにより、支持ピンVP1及び位置決めピンPV2が支持面10sから引き下げられて、基板W1,W2が支持領域S1,S2上に同時に配置される。 Subsequently, the drive unit 50 of the substrate holding apparatus 100 moves the second base member 70 from the raised position to the lowered position by the second lifting / lowering unit 75. Thereby, the support pin VP1 and the positioning pin PV2 are pulled down from the support surface 10s, and the substrates W1 and W2 are simultaneously disposed on the support regions S1 and S2.
 続いて、基板保持装置100の駆動部50は、第1昇降ユニット65によって第1ベース部材60を上昇位置から下降位置へ移動させる。これにより、第1~第3クランプ部C1~C3のフック部21,31が非クランプ位置からクランプ位置へ移動するため、基板W1,W2の周縁部が支持領域S1,S2に保持される。 Subsequently, the drive unit 50 of the substrate holding apparatus 100 moves the first base member 60 from the raised position to the lowered position by the first lifting / lowering unit 65. As a result, the hook portions 21 and 31 of the first to third clamp portions C1 to C3 move from the non-clamping position to the clamping position, so that the peripheral edge portions of the substrates W1 and W2 are held in the support regions S1 and S2.
 このとき、第1及び第2クランプ部C1,C2のフック部21は、支持面10sに対して略平行な動きを伴ってクランプ位置へ移動するため、基板W1,W2が支持領域S1,S2に対して位置ずれを生じている場合でも、フック部21のクランプ位置への移動の過程で基板W1,W2が支持領域S1,S2に向けて押圧されるため、所期のアライメント精度が確保される。 At this time, the hook portions 21 of the first and second clamp portions C1 and C2 move to the clamp position with movement substantially parallel to the support surface 10s, so that the substrates W1 and W2 move to the support regions S1 and S2. Even when a positional deviation occurs, the substrates W1 and W2 are pressed toward the support areas S1 and S2 in the process of moving the hook portion 21 to the clamp position, so that the desired alignment accuracy is ensured. .
 一方、第3クランプ部C3のフック部31は、支持面10sの上方から支持面10sに接近する動きを伴ってクランプ位置へ移動するため、基板W1,W2の周縁部(角部など)に反り等が生じている場合でも、当該反りを矯正し、高い平面度で基板W1,W2を保持することができる。しかも、第3クランプ部C3は、第1及び第2クランプ部C1,C2の動作に遅れて基板W1,W2の周縁部を保持するように構成されているため、上述のように第1及び第2クランプ部C1,C2による基板W1,W2の適切な保持動作を安定に確保することができる。 On the other hand, the hook portion 31 of the third clamp portion C3 moves to the clamp position with a movement approaching the support surface 10s from above the support surface 10s, and thus warps the peripheral portions (corners, etc.) of the substrates W1 and W2. Even when the above occurs, the warpage can be corrected and the substrates W1 and W2 can be held with high flatness. In addition, since the third clamp part C3 is configured to hold the peripheral edges of the substrates W1 and W2 behind the operation of the first and second clamp parts C1 and C2, the first and second clamp parts C3 and C2 are held as described above. The appropriate holding operation of the substrates W1, W2 by the two clamp portions C1, C2 can be stably ensured.
 続いて、基板保持装置100は、回転機構部13を介してプラテン12を水平姿勢から垂直姿勢に起立させる(図2B参照)。そして、ターゲットユニット212に対向する支持面10s上の基板W1,W2に対して所定の成膜処理が実施される。 Subsequently, the substrate holding apparatus 100 raises the platen 12 from the horizontal posture to the vertical posture via the rotation mechanism unit 13 (see FIG. 2B). Then, a predetermined film forming process is performed on the substrates W1 and W2 on the support surface 10s facing the target unit 212.
 本実施形態によれば、基板W1、W2は、第1~第3クランプ部C1~C3によって支持面10s上に安定に保持されているため、支持領域S1,S2からの脱落が防止される。
 特に本実施形態によれば、支持面10sの中間領域10Mにも複数のクランプ部(第1クランプ部C1)が配置されているため、複数の基板W1,W2を安定に保持することができる。さらに、基板W1,W2間の相対位置を安定に維持することができ、支持領域S1,S2に対する基板W1,W2の位置精度を確保することができる。このため、マスク成膜する場合においても、高いマスク精度を維持することができる。
According to the present embodiment, the substrates W1 and W2 are stably held on the support surface 10s by the first to third clamp portions C1 to C3, so that they are prevented from falling off from the support regions S1 and S2.
In particular, according to the present embodiment, since the plurality of clamp portions (first clamp portions C1) are also arranged in the intermediate region 10M of the support surface 10s, the plurality of substrates W1 and W2 can be stably held. Furthermore, the relative position between the substrates W1 and W2 can be stably maintained, and the positional accuracy of the substrates W1 and W2 with respect to the support regions S1 and S2 can be ensured. For this reason, high mask accuracy can be maintained even when a mask film is formed.
 成膜後、基板保持装置100は、プラテン12を垂直姿勢から水平姿勢に変換する。そして、基板保持装置100は上述とは逆の動作で(図8A~Cの順で)第1ベース部材60及び第2ベース部材70を順次上昇させる。これにより、第1~第3クランプ部C1~C3による基板W1,W2の保持動作が解除された後、支持ピンVP1により、基板W1,W2が支持面10sから同時に上昇し、図示しない基板搬送ロボットに移載される。 After film formation, the substrate holding apparatus 100 converts the platen 12 from a vertical posture to a horizontal posture. Then, the substrate holding apparatus 100 sequentially raises the first base member 60 and the second base member 70 in the reverse operation (in the order of FIGS. 8A to 8C). Thus, after the holding operation of the substrates W1 and W2 by the first to third clamp portions C1 to C3 is released, the substrates W1 and W2 are simultaneously lifted from the support surface 10s by the support pins VP1, and a substrate transfer robot (not shown) To be transferred.
<第2の実施形態>
 続いて、本発明の第2の実施形態について説明する。図11は、本実施形態における基板保持装置101の要部断面図である。図において、上述の第1の実施形態と対応する部分については同一の符号を付し、その詳細な説明は省略する。
<Second Embodiment>
Subsequently, a second embodiment of the present invention will be described. FIG. 11 is a cross-sectional view of a main part of the substrate holding device 101 in the present embodiment. In the figure, portions corresponding to those of the first embodiment described above are denoted by the same reference numerals, and detailed description thereof is omitted.
 図11に示すように、本実施形態の基板保持装置101における基板支持台10は、基板W1,W2を静電的に吸着することが可能な吸着部80を有する。吸着部80は、静電チャック機構であり、コントローラ90からの電力供給を受けて支持面10s上の基板W1,W2を静電的に吸着することが可能に構成される。 As shown in FIG. 11, the substrate support 10 in the substrate holding device 101 of the present embodiment has a suction portion 80 that can electrostatically suck the substrates W1 and W2. The attracting unit 80 is an electrostatic chuck mechanism, and is configured to be capable of electrostatically attracting the substrates W1 and W2 on the support surface 10s upon receiving power supply from the controller 90.
 吸着部80は、典型的には、支持面10sの表面全域にわたって設けられる。これに限られず、吸着部80は、支持面10s上の支持領域S1,S2に対応する領域にそれぞれ設けられてもよい。また、各支持領域S1,S2上に設けられる吸着部80は複数個所に分割して配置されてもよい。 The adsorption part 80 is typically provided over the entire surface of the support surface 10s. However, the adsorbing portion 80 may be provided in each of the regions corresponding to the support regions S1 and S2 on the support surface 10s. Moreover, the adsorption | suction part 80 provided on each support area | region S1, S2 may be divided | segmented and arrange | positioned in several places.
 吸着部80は、所定以上の電圧が印加されることで基板Wに対する静電吸着力を発現させるチャック電極を有する。静電吸着力の種類は特に限定されず、典型的には、クーロン力、ジョンソン・ラーベック力等が採用される。 The attracting unit 80 has a chuck electrode that develops an electrostatic attracting force to the substrate W when a voltage of a predetermined level or higher is applied. The type of electrostatic attraction force is not particularly limited, and typically, Coulomb force, Johnson Rabeck force, or the like is employed.
 吸着部80は、本実施形態では双極型静電チャックで構成され、各チャック領域には正極用のチャック電極と負極用のチャック電極がそれぞれ設けられる。これら2つのチャック電極は、支持面10sに面するように相互に隣接して配置される。各電極は絶縁膜で保護され、当該絶縁膜を介して基板W1,W2と接触する。なお、吸着部80は、単極型静電チャックで構成されてもよい。チャック電極の大きさ(面積)、配列数、配列形態等は、基板W1,W2を起立姿勢で安定に保持できれば特に限定されない。 In this embodiment, the suction unit 80 is composed of a bipolar electrostatic chuck, and a chuck electrode for a positive electrode and a chuck electrode for a negative electrode are provided in each chuck region. These two chuck electrodes are arranged adjacent to each other so as to face the support surface 10s. Each electrode is protected by an insulating film and contacts the substrates W1 and W2 through the insulating film. In addition, the adsorption | suction part 80 may be comprised with a monopolar electrostatic chuck. The size (area), the number of arrays, the array form, and the like of the chuck electrodes are not particularly limited as long as the substrates W1 and W2 can be stably held in the standing posture.
 コントローラ90は、吸着部80の各チャック電極に対する電力供給及びその遮断を同期して行うように構成される。これに代えて、所定のチャック電極に対して個別に電力を供給するように構成されてもよい。これにより、各チャック電極による吸着開始/解除動作を個々に制御することが可能となるため、反りや撓みが発生しやすい基板でも高い平面度を確保することができる。例えば、基板W1,W2の上縁側から下縁側に向けて順次吸着動作が開始するように電力供給を制御することで、基板Wの自重をも利用しつつ、基板Wを所望とする平面度で安定に保持することが可能となる。 The controller 90 is configured to synchronize power supply to and disconnection from each chuck electrode of the suction unit 80. Instead of this, power may be individually supplied to a predetermined chuck electrode. This makes it possible to individually control the adsorption start / release operation by each chuck electrode, so that high flatness can be ensured even for a substrate that is likely to be warped or bent. For example, by controlling the power supply so that the suction operation starts sequentially from the upper edge side to the lower edge side of the substrates W1 and W2, the substrate W can be made to have a desired flatness while utilizing its own weight. It becomes possible to hold it stably.
 吸着部80は、コントローラ90から電力の供給を受けて基板W1,W2の保持動作を開始し、電力供給が遮断されて基板W1,W2の保持動作を解除する。コントローラ90は、基板W1,W2の保持動作を速やかに行うため、デチャック操作時、各チャック電極へ逆電圧を印加するように構成されてもよい。 The suction unit 80 receives the power supply from the controller 90 and starts the holding operation of the substrates W1 and W2, and the power supply is cut off to release the holding operation of the substrates W1 and W2. The controller 90 may be configured to apply a reverse voltage to each chuck electrode during the dechuck operation in order to quickly hold the substrates W1 and W2.
 以上のように構成される本実施形態の基板保持装置101においては、基板W1,W2を保持する際、上述した第1~第3クランプ部C1~C3による基板保持動作が実行された後、吸着部80による基板W1,W2の吸着動作が実行される。これにより、支持面10sに対する基板W1,W2の所定のアライメント精度がさらに確保される。 In the substrate holding apparatus 101 of the present embodiment configured as described above, when the substrates W1 and W2 are held, the substrate holding operation by the first to third clamp portions C1 to C3 described above is performed, and then suction is performed. The suction operation of the substrates W1 and W2 by the unit 80 is executed. Thereby, the predetermined alignment accuracy of the substrates W1 and W2 with respect to the support surface 10s is further ensured.
 続いて、基板保持装置101は、回転機構部13を介してプラテン12を水平姿勢から垂直姿勢に起立させた後、ターゲットユニット212に対向する支持面10s上の基板W1,W2に対して所定の成膜処理が実施される。このとき、基板W1、W2は、第1~第3クランプ部C1~C3による保持作用と吸着部80による静電吸着作用により、支持面10s上に安定に保持され、支持領域S1,S2からの脱落が防止される。 Subsequently, the substrate holding apparatus 101 raises the platen 12 from the horizontal posture to the vertical posture via the rotation mechanism unit 13 and then performs predetermined processing on the substrates W1 and W2 on the support surface 10s facing the target unit 212. A film forming process is performed. At this time, the substrates W1 and W2 are stably held on the support surface 10s by the holding action by the first to third clamp parts C1 to C3 and the electrostatic attraction action by the suction part 80, and the substrates W1 and W2 are separated from the support areas S1 and S2. Dropping is prevented.
 成膜処理の終了後、基板保持装置101は、回転機構部13を介してプラテン12を起立姿勢から水平姿勢に変換する。支持面10sに対する基板W1,W2の保持解除動作は、吸着部80による静電吸着動作を解除した後、上述した手順で第1~第3クランプ部C1~C3による基板保持動作が解除される。 After completion of the film forming process, the substrate holding device 101 converts the platen 12 from the standing posture to the horizontal posture through the rotation mechanism unit 13. In the holding release operation of the substrates W1 and W2 with respect to the support surface 10s, after the electrostatic chucking operation by the chucking unit 80 is canceled, the substrate holding operation by the first to third clamp units C1 to C3 is released in the above-described procedure.
 以上、本発明の実施形態について説明したが、本発明は上述の実施形態にのみ限定されるものではなく種々変更を加え得ることは勿論である。 As mentioned above, although embodiment of this invention was described, this invention is not limited only to the above-mentioned embodiment, Of course, a various change can be added.
 10…基板支持台
 10s…支持面
 10C…周辺領域
 10M…中間領域
 12…プラテン
 13…回転機構部
 20,30…フック部材
 21,31…フック部
 23…回転支持部
 24,34…付勢部材
 33…リンク機構部
 50…駆動部
 60…第1ベース部材
 65…第1昇降ユニット
 70…第2ベース部材
 75…第2昇降ユニット
 80…吸着部
 90…コントローラ
 100,101…基板保持装置
 200…成膜装置
 211…真空チャンバ
 212…ターゲットユニット
 C1…第1クランプ部
 C2…第2クランプ部
 C3…第3クランプ部
 CP1,CP2,CP3…操作軸
 VP1…支持ピン
 VP2…位置決めピン
DESCRIPTION OF SYMBOLS 10 ... Substrate support 10s ... Support surface 10C ... Peripheral area | region 10M ... Middle area | region 12 ... Platen 13 ... Rotation mechanism part 20, 30 ... Hook member 21, 31 ... Hook part 23 ... Rotation support part 24, 34 ... Biasing member 33 ... Link mechanism 50 ... Driver 60 ... First base member 65 ... First lifting / lowering unit 70 ... Second base member 75 ... Second lifting / lowering unit 80 ... Suction part 90 ... Controller 100, 101 ... Substrate holding device 200 ... Film formation Apparatus 211 ... Vacuum chamber 212 ... Target unit C1 ... First clamp part C2 ... Second clamp part C3 ... Third clamp part CP1, CP2, CP3 ... Operation shaft VP1 ... Support pin VP2 ... Positioning pin

Claims (13)

  1.  複数の基板が個々に配置される複数の支持領域を有する支持面と、前記支持面に平行な軸まわりに前記支持面を水平姿勢から垂直姿勢に起立させることが可能な回転機構部とを有する基板支持台と、
     前記複数の支持領域の周囲に沿って配置され前記複数の基板の周縁部を保持可能な複数のクランプ部を有し、前記複数のクランプ部は、前記複数の支持領域の間の中間領域に配置され前記複数の基板の周縁部を個々に保持可能な複数の第1クランプ部を含む、クランプ機構と
     を具備する基板保持装置。
    A support surface having a plurality of support regions on which a plurality of substrates are individually arranged; and a rotation mechanism unit capable of raising the support surface from a horizontal posture to a vertical posture around an axis parallel to the support surface. A substrate support,
    A plurality of clamp portions arranged along the periphery of the plurality of support regions and capable of holding peripheral portions of the plurality of substrates, wherein the plurality of clamp portions are disposed in an intermediate region between the plurality of support regions; And a clamp mechanism including a plurality of first clamp portions capable of individually holding peripheral portions of the plurality of substrates.
  2.  請求項1に記載の基板保持装置であって、
     前記複数の支持領域は、前記基板支持台が垂直姿勢のときに上下方向に隣り合う少なくとも2つの支持領域を含む
     基板保持装置。
    The substrate holding apparatus according to claim 1,
    The plurality of support regions include at least two support regions adjacent in the vertical direction when the substrate support is in a vertical posture.
  3.  請求項1又は2に記載の基板保持装置であって、
     前記複数のクランプ部は、前記中間領域を除く前記複数の支持領域の周辺領域に配置された複数の第2クランプ部及び複数の第3クランプ部をさらに含み、
     前記複数の第1及び第2クランプ部は、前記支持面に対して略平行な動きを伴って前記複数の基板の周縁部に対向するフック部を有し、
     前記複数の第3クランプ部は、前記支持面の上方から前記支持面に接近する動きを伴って前記複数の基板の周縁部に対向するフック部を有する
     基板保持装置。
    The substrate holding apparatus according to claim 1 or 2,
    The plurality of clamp portions further includes a plurality of second clamp portions and a plurality of third clamp portions disposed in a peripheral region of the plurality of support regions excluding the intermediate region,
    The plurality of first and second clamp portions have hook portions that oppose peripheral edges of the plurality of substrates with a movement substantially parallel to the support surface,
    The plurality of third clamp portions include a hook portion that faces a peripheral portion of the plurality of substrates with a movement approaching the support surface from above the support surface.
  4.  請求項3に記載の基板保持装置であって、
     前記複数の第1及び第2クランプ部は、前記フック部をクランプ位置に向けて一定曲率の曲線軌道に沿って回転可能に支持する回転支持部をさらに有する
     基板保持装置。
    The substrate holding apparatus according to claim 3,
    The plurality of first and second clamp parts further include a rotation support part that rotatably supports the hook part toward a clamp position along a curved track having a constant curvature.
  5.  請求項3又は4に記載の基板保持装置であって、
     前記複数の第3クランプ部は、前記フック部をクランプ位置に向けて、前記複数の第1及び第2クランプ部よりも大きな前記支持面からの最大高さを有する曲線軌道に沿って移動可能に支持するリンク機構部をさらに有する
     基板保持装置。
    The substrate holding apparatus according to claim 3 or 4,
    The plurality of third clamp portions are movable along a curved track having a maximum height from the support surface that is larger than the plurality of first and second clamp portions, with the hook portions facing a clamp position. A substrate holding device further comprising a link mechanism for supporting.
  6.  請求項4又は5に記載の基板保持装置であって、
     前記複数の第1~第3クランプ部は、前記フック部を前記クランプ位置へ付勢する付勢部材をそれぞれさらに有する
     基板保持装置。
    The substrate holding apparatus according to claim 4 or 5,
    The plurality of first to third clamp portions each further include a biasing member that biases the hook portion to the clamp position.
  7.  請求項3~6のいずれか1つに記載の基板保持装置であって、
     前記クランプ機構は、前記複数の第1クランプ部及び前記複数の第2クランプ部によって前記複数の基板の周縁部を保持した後、前記複数の第3クランプ部によって前記複数の基板の周縁部を保持するように構成される
     基板保持装置。
    A substrate holding apparatus according to any one of claims 3 to 6, comprising:
    The clamp mechanism holds the peripheral portions of the plurality of substrates by the plurality of first clamp portions and the plurality of second clamp portions, and then holds the peripheral portions of the plurality of substrates by the plurality of third clamp portions. A substrate holding device configured to be.
  8.  請求項3~7のいずれか1つに記載の基板保持装置であって、
     前記複数の基板の平面形状は矩形であり、
     前記複数の第3クランプ部は、前記複数の第1クランプ部及び前記複数の第2クランプ部よりも前記複数の基板の角部に近い位置に配置される
     基板保持装置。
    A substrate holding apparatus according to any one of claims 3 to 7,
    The planar shape of the plurality of substrates is a rectangle,
    The plurality of third clamp portions are arranged at positions closer to the corners of the plurality of substrates than the plurality of first clamp portions and the plurality of second clamp portions.
  9.  請求項1~8のいずれか1つに記載の基板保持装置であって、
     前記クランプ機構は、前記基板支持台が水平姿勢の状態にあるときに前記複数のクランプ部をクランプ位置から非クランプ位置へ移動させることが可能な駆動部をさらに有し、
     前記駆動部は、
     前記複数のクランプ部に対応して配置された複数の操作軸を有する第1ベース部材と、
     前記複数の操作軸で前記複数のクランプ部を押し上げることで前記複数のクランプ部を前記非クランプ位置へセットする上昇位置と、前記複数の操作軸による前記複数のクランプ部の押し上げを解除することで前記複数のクランプ部を前記クランプ位置へセットする下降位置との間にわたって、前記第1ベース部材を昇降させる第1昇降ユニットと
     を有する
     基板保持装置。
    A substrate holding apparatus according to any one of claims 1 to 8,
    The clamp mechanism further includes a drive unit capable of moving the plurality of clamp units from a clamp position to a non-clamp position when the substrate support is in a horizontal posture.
    The drive unit is
    A first base member having a plurality of operation shafts arranged corresponding to the plurality of clamp portions;
    By lifting up the plurality of clamp portions with the plurality of operation shafts, releasing the plurality of clamp portions by the plurality of operation shafts, and a lift position for setting the plurality of clamp portions to the non-clamp position. A substrate holding apparatus, comprising: a first elevating unit that elevates and lowers the first base member between a lowered position where the plurality of clamp portions are set at the clamp position.
  10.  請求項9に記載の基板保持装置であって、
     前記駆動部は、
     前記第1ベース部材と平行に配置され前記支持面を貫通可能な複数の支持ピンを有する第2ベース部材と、
     前記複数の支持ピンで前記複数の基板の裏面を支持する上昇位置と、前記複数の支持ピンで支持された前記複数の基板を前記支持面上に配置する下降位置との間にわたって、前記第2ベース部材を昇降させる第2昇降ユニットと
     をさらに有する
     基板保持装置。
    The substrate holding apparatus according to claim 9, wherein
    The drive unit is
    A second base member having a plurality of support pins arranged parallel to the first base member and penetrating the support surface;
    The second position extends between a rising position where the back surfaces of the plurality of substrates are supported by the plurality of support pins and a lowered position where the plurality of substrates supported by the plurality of support pins are arranged on the support surface. A substrate holding apparatus further comprising: a second lifting unit that lifts and lowers the base member.
  11.  請求項1~10のいずれか1つに記載の基板保持装置であって、
     前記基板支持台は、前記支持面に設けられ前記複数の基板を静電的に吸着することが可能に構成された吸着部をさらに有する
     基板保持装置。
    A substrate holding apparatus according to any one of claims 1 to 10,
    The said board | substrate support stand further has an adsorption | suction part provided in the said support surface and comprised so that electrostatic adsorption | suction of the said several board | substrate was possible. The board | substrate holding | maintenance apparatus.
  12.  水平姿勢に維持された支持面上の複数の支持領域に基板を個々に配置し、
     前記複数の支持領域の間の中間領域と、前記中間領域を除く前記複数の支持領域の周辺領域とにそれぞれ配置され、前記支持面に対して略平行な動きを伴って前記基板の周縁部に対向する第1のフック部を有する複数のクランプ部によって、前記基板を保持し、
     前記周辺領域に配置され、前記支持面の上方から前記支持面に接近する動きを伴って前記基板の周縁部に対向する第2のフック部を有する複数のクランプ部によって、前記基板を保持し、
     前記支持面を水平姿勢から垂直姿勢に起立させる
     基板保持方法。
    Arranging the substrates individually in a plurality of support areas on the support surface maintained in a horizontal position,
    The substrate is disposed in an intermediate region between the plurality of support regions and a peripheral region of the plurality of support regions excluding the intermediate region, and moves along a peripheral portion of the substrate with a movement substantially parallel to the support surface. The substrate is held by a plurality of clamp portions having first hook portions facing each other,
    The substrate is held by a plurality of clamp portions arranged in the peripheral region and having a second hook portion facing the peripheral edge of the substrate with a movement approaching the support surface from above the support surface,
    A substrate holding method for raising the support surface from a horizontal posture to a vertical posture.
  13.  成膜源を有する成膜室と、
     前記成膜室に配置され、複数の基板が個々に配置される複数の支持領域を有する支持面と、前記支持面に平行な軸まわりに前記支持面を水平姿勢から垂直姿勢に起立させることが可能な回転機構部とを有する基板支持台と、
     前記複数の支持領域の周囲に沿って配置され前記複数の基板の周縁部を保持可能な複数のクランプ部を有し、前記複数のクランプ部は、前記複数の支持領域の間の中間領域に配置され前記複数の基板の周縁部を個々に保持可能な複数の第1クランプ部を含む、クランプ機構と
     を具備する成膜装置。
    A deposition chamber having a deposition source;
    A support surface that is disposed in the film forming chamber and has a plurality of support regions in which a plurality of substrates are individually disposed, and the support surface is raised from a horizontal posture to a vertical posture around an axis parallel to the support surface. A substrate support having a possible rotation mechanism;
    A plurality of clamp portions arranged along the periphery of the plurality of support regions and capable of holding peripheral portions of the plurality of substrates, wherein the plurality of clamp portions are disposed in an intermediate region between the plurality of support regions; And a clamp mechanism including a plurality of first clamp portions capable of individually holding peripheral portions of the plurality of substrates.
PCT/JP2019/013780 2018-04-11 2019-03-28 Substrate holding device, substrate holding method, and film forming device WO2019198537A1 (en)

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TWI778250B (en) 2022-09-21
JP6808839B2 (en) 2021-01-06
JPWO2019198537A1 (en) 2020-04-30
CN111373523B (en) 2023-09-08
TW201944526A (en) 2019-11-16

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