JP2021180214A - Substrate mounting method and substrate mounting mechanism - Google Patents

Substrate mounting method and substrate mounting mechanism Download PDF

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JP2021180214A
JP2021180214A JP2020083483A JP2020083483A JP2021180214A JP 2021180214 A JP2021180214 A JP 2021180214A JP 2020083483 A JP2020083483 A JP 2020083483A JP 2020083483 A JP2020083483 A JP 2020083483A JP 2021180214 A JP2021180214 A JP 2021180214A
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substrate
lift pin
mounting
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central portion
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JP7438018B2 (en
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篤 邊見
Atsushi Hemmi
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Tokyo Electron Ltd
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Priority to CN202110481063.3A priority patent/CN113644021B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

To provide a substrate mounting method and a substrate mounting mechanism that inhibit a substrate from being deformed.SOLUTION: A substrate mounting method includes: a step of supporting a substrate using a first to fourth lift pins in a state in which at least the fourth lift pin is higher than the third lift pin and the second lift pin is higher than the fourth lift pin, the first lift pin provided at a corner of a mounting region, the second lift pin provided at a short side center part of the mounting region, the third lift pin provided at a long side center part of the mounting region, the fourth lift pin provided at a surface center part of the mounting region; and steps of storing the first to fourth lift pins in a mounting table and mounting the substrate on the mounting region, after the step of supporting the substrate. In the step of mounting the substrate on the mounting region, at least first, the substrate's long side center part is mounted on a mounting surface, then, the substrate's surface center part is mounted on the mounting surface, and then, the substrate's short side center part is mounted on the mounting surface.SELECTED DRAWING: Figure 4

Description

本開示は、基板載置方法及び基板載置機構に関する。 The present disclosure relates to a substrate mounting method and a substrate mounting mechanism.

特許文献１には、可撓性のある基板にプラズマ処理を行う処理チャンバ内に設置され、前記基板を静電吸着により吸着する静電チャックを備えた載置台に、前記基板を受け渡す基板受け渡し方法であって、前記載置台は、前記基板を載置する基板載置面と、該基板載置面に対して突没可能であり、前記基板の周縁部を支持する第１の昇降ピンと、前記基板載置面に対して突没可能であり、前記基板の中央部を支持する第２の昇降ピンとを備え、前記基板を前記基板載置面の上方にて、前記第１の昇降ピンと、前記第１の昇降ピンよりも低い位置の第２の昇降ピンとにより支持した前記基板を下降させ、前記基板を、該基板の中央部から前記基板載置面に載置させる基板載置工程と、前記基板載置面に載置された前記基板を前記静電チャックにより吸着して、前記基板にプラズマ処理を行う工程と、前記プラズマ処理終了後、前記静電チャックによる吸着を解除し、前記第１の昇降ピンと前記第２の昇降ピンとを同じ高さとして前記基板を支持し、前記基板を前記基板載置面から離脱させる基板離脱工程と、を含むことを特徴とする基板受け渡し方法が開示されている。 In Patent Document 1, a substrate is delivered to a mounting table provided with an electrostatic chuck which is installed in a processing chamber for performing plasma treatment on a flexible substrate and which adsorbs the substrate by electrostatic adsorption. In the method, the above-mentioned pedestal has a substrate mounting surface on which the substrate is mounted and a first elevating pin that can be recessed with respect to the substrate mounting surface and supports the peripheral edge of the substrate. A second elevating pin that is recessable with respect to the substrate mounting surface and supports the central portion of the substrate is provided, and the substrate is placed above the substrate mounting surface with the first elevating pin. A substrate mounting step of lowering the substrate supported by a second elevating pin at a position lower than the first elevating pin and mounting the substrate on the substrate mounting surface from the central portion of the substrate. The step of adsorbing the substrate mounted on the substrate mounting surface by the electrostatic chuck to perform plasma treatment on the substrate, and after the plasma treatment is completed, the adsorption by the electrostatic chuck is released, and the first. Disclosed is a substrate transfer method comprising a substrate detaching step of supporting the substrate with the elevating pin of 1 and the elevating pin of the second elevating pin at the same height and detaching the substrate from the substrate mounting surface. ing.

特開２０１３−３３８４７号公報Japanese Unexamined Patent Publication No. 2013-33847

一の側面では、本開示は、可撓性を有する基板を載置台に載置する際の基板の変形を抑制する基板載置方法及び基板載置機構を提供する。 In one aspect, the present disclosure provides a substrate mounting method and a substrate mounting mechanism that suppresses deformation of a substrate when a flexible substrate is mounted on a mounting table.

上記課題を解決するために、一の態様によれば、可撓性を有する矩形状の基板を載置する載置面を有する載置台に、前記基板を載置する基板載置方法であって、前記載置面は、前記基板に対応した載置領域を有し、前記載置台は、前記載置領域の角部において突没可能に設けられた第１のリフトピンと、前記載置領域の短辺中央部において突没可能に設けられた第２のリフトピンと、前記載置領域の長辺中央部において突没可能に設けられた第３のリフトピンと、前記載置領域の面中央部において突没可能に設けられた第４のリフトピンと、を備え、少なくとも、前記第３のリフトピンよりも前記第４のリフトピンが高く、前記第４のリフトピンよりも前記第２のリフトピンが高くなる状態で、前記第１乃至第４のリフトピンにより前記基板を支持する工程と、前記基板を支持する工程の後、前記第１乃至第４のリフトピンを前記載置台に収納して前記基板を前記載置領域に載置する工程と、を有し、前記基板を前記載置領域に載置する工程は、少なくとも、最初に前記基板の長辺中央部が前記載置面に載置され、次に前記基板の面中央部が前記載置面に載置され、次に前記基板の短辺中央部が前記載置面に載置される、基板載置方法が提供される。 In order to solve the above problems, according to one aspect, there is a substrate mounting method in which the substrate is mounted on a mounting table having a mounting surface on which a flexible rectangular substrate is mounted. . A second lift pin provided so as to be retractable in the central portion of the short side, a third lift pin provided so as to be retractable in the central portion of the long side of the previously described placement area, and a center portion of the surface of the previously described placement region. A fourth lift pin provided so as to be retractable, at least in a state where the fourth lift pin is higher than the third lift pin and the second lift pin is higher than the fourth lift pin. After the step of supporting the substrate by the first to fourth lift pins and the step of supporting the substrate, the first to fourth lift pins are housed in the above-mentioned pedestal and the substrate is placed in the pre-described area. In the step of mounting the substrate in the previously described mounting region, at least the central portion of the long side of the substrate is first mounted on the previously described mounting surface, and then the substrate is mounted. A substrate mounting method is provided in which the central portion of the surface of the substrate is mounted on the previously described mounting surface, and then the central portion of the short side of the substrate is mounted on the previously described mounting surface.

一の側面によれば、可撓性を有する基板を載置台に載置する際の基板の変形を抑制する基板載置方法及び基板載置機構を提供することができる。 According to one aspect, it is possible to provide a substrate mounting method and a substrate mounting mechanism that suppress the deformation of the substrate when the flexible substrate is mounted on the mounting table.

基板処理装置の概略断面図の一例。An example of a schematic cross-sectional view of a substrate processing apparatus. 基板処理装置の平面方向の概略断面図の一例。An example of a schematic cross-sectional view in the plane direction of a substrate processing apparatus. リフトピンを駆動させる駆動機構の構成を示すブロック図の一例。An example of a block diagram showing the configuration of a drive mechanism that drives a lift pin. 基板処理装置の基板受け渡し動作の一例を説明するフローチャート。The flowchart explaining an example of the board delivery operation of a board processing apparatus. 基板処理装置の基板受け渡し動作時におけるリフトピンの動作の一例を示すタイムチャート。A time chart showing an example of the operation of the lift pin during the board transfer operation of the board processing device. リフトピンに受け渡された際の基板の断面概念図の一例。An example of a cross-sectional conceptual diagram of a board when it is handed over to a lift pin. 基板の撓みの一例を説明する図。The figure explaining an example of the bending of a substrate.

以下、図面を参照して本開示を実施するための形態について説明する。各図面において、同一構成部分には同一符号を付し、重複した説明を省略する場合がある。 Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components may be designated by the same reference numerals and duplicate explanations may be omitted.

＜基板処理装置＞
本実施形態に係る基板処理装置１について図１から図３を用いて説明する。図１は、基板処理装置１の概略断面図の一例である。基板処理装置１は、載置台に基板Ｇを載置して、基板Ｇに所望の処理（例えば、エッチング処理等）を施す装置である。また、載置台は、載置された基板Ｇの温度を調整（例えば、冷却）可能に構成されている。なお、水平な一方向をＸ方向とし、水平かつＸ方向と直交する方向をＹ方向とし、高さ方向をＺ方向として説明する。 <Board processing equipment>
The substrate processing apparatus 1 according to the present embodiment will be described with reference to FIGS. 1 to 3. FIG. 1 is an example of a schematic cross-sectional view of the substrate processing apparatus 1. The substrate processing apparatus 1 is an apparatus in which the substrate G is placed on a mounting table and a desired treatment (for example, etching treatment or the like) is applied to the substrate G. Further, the mounting table is configured so that the temperature of the mounted substrate G can be adjusted (for example, cooling). It should be noted that one horizontal direction is defined as the X direction, the horizontal direction perpendicular to the X direction is defined as the Y direction, and the height direction is defined as the Z direction.

また、基板処理装置１において処理が施される基板Ｇ、換言すれば、載置台に載置される基板Ｇは、平面視して矩形状であり、可撓性を有する基板である。基板Ｇは、例えば、可撓性を有する矩形状のガラス基板であってもよい。また、基板Ｇは、例えば、厚さが０．２ｍｍ乃至数ｍｍ程度の薄膜ガラス基板であってもよい。また、基板Ｇは、例えば、平面寸法が第６世代の１５００ｍｍ×１８００ｍｍ程度の寸法から、第１０．５世代の３０００ｍｍ×３４００ｍｍ程度の寸法までを少なくとも含むものであってもよい。 Further, the substrate G to be processed in the substrate processing apparatus 1, in other words, the substrate G mounted on the mounting table is a substrate having a rectangular shape in a plan view and having flexibility. The substrate G may be, for example, a flexible rectangular glass substrate. Further, the substrate G may be, for example, a thin film glass substrate having a thickness of about 0.2 mm to several mm. Further, the substrate G may include, for example, at least a plane dimension of about 1500 mm × 1800 mm of the 6th generation to a dimension of about 3000 mm × 3400 mm of the 10.5th generation.

基板処理装置１は、基板Ｇを収容する処理容器としてのチャンバ２を備えている。チャンバ２は、例えば、表面がアルマイト処理（陽極酸化処理）されたアルミニウムからなり、基板Ｇの形状に対応して四角筒形状に形成されている。 The substrate processing apparatus 1 includes a chamber 2 as a processing container for accommodating the substrate G. The chamber 2 is made of, for example, alumite-treated (anodized) aluminum on the surface, and is formed in a square cylinder shape corresponding to the shape of the substrate G.

チャンバ２内の底壁には、基板Ｇを載置する載置台としてのサセプタ４が設けられている。サセプタ４は、基板Ｇの形状に対応して四角板状または柱状に形成されている。サセプタ４は、金属等の導電性材料からなる基材４ａと、基材４ａの底部とチャンバ２の底面との間に設けられた絶縁部材４ｂと、を有している。基材４ａには、高周波電力を供給するための給電線２３が接続されている。給電線２３は、整合器２４を介して高周波電源２５が接続されている。高周波電源２５は、例えば、１３．５６ＭＨｚの高周波電力をサセプタ４に印加する。整合器２４は、高周波電源２５の出力インピーダンスと負荷側の入力インピーダンスとを整合させる。これにより、サセプタ４は、下部電極として機能するように構成されている。 A susceptor 4 as a mounting table on which the substrate G is mounted is provided on the bottom wall in the chamber 2. The susceptor 4 is formed in a square plate shape or a columnar shape corresponding to the shape of the substrate G. The susceptor 4 has a base material 4a made of a conductive material such as metal, and an insulating member 4b provided between the bottom portion of the base material 4a and the bottom surface of the chamber 2. A feeder line 23 for supplying high-frequency power is connected to the base material 4a. A high frequency power supply 25 is connected to the feeder line 23 via a matching unit 24. The high frequency power supply 25 applies, for example, a high frequency power of 13.56 MHz to the susceptor 4. The matching device 24 matches the output impedance of the high frequency power supply 25 with the input impedance on the load side. As a result, the susceptor 4 is configured to function as a lower electrode.

また、サセプタ４には、載置された基板Ｇを静電吸着により吸着する静電チャック４０が設けられている。静電チャック４０は、基材４ａの上部に設けられている。静電チャック４０は、誘電体４１と、誘電体４１の内部に設けられた内部電極４２と、を有している。内部電極４２には、電圧を印加するための給電線４３が接続されている。給電線４３は、スイッチ４４を介して電源４５が接続されている。電源４５は、内部電極４２に電圧を印加する。スイッチ４４は、電圧の印加をオン・オフさせる。 Further, the susceptor 4 is provided with an electrostatic chuck 40 that adsorbs the mounted substrate G by electrostatic adsorption. The electrostatic chuck 40 is provided on the upper part of the base material 4a. The electrostatic chuck 40 has a dielectric 41 and an internal electrode 42 provided inside the dielectric 41. A feeder line 43 for applying a voltage is connected to the internal electrode 42. The power supply 45 is connected to the power supply line 43 via the switch 44. The power supply 45 applies a voltage to the internal electrode 42. The switch 44 turns the application of voltage on and off.

また、サセプタ４（静電チャック４０）の上面は、基板Ｇを載置する基板載置面４ｃとなる。なお、基板載置面４ｃには、基板Ｇの裏面の外周部と接する外縁部（図示せず）と、外縁部の内側に形成される堀込部（図示せず）と、を有する。また、堀込部には、Ｈｅガス等の伝熱ガスが供給可能に構成されている。静電チャック４０が基板Ｇを静電吸着することにより、基板Ｇの裏面の外周部と基板載置面４ｃの外縁部とが気密に吸着される。また、基板Ｇの裏面と基板載置面４ｃの堀込部との間に間隙として形成される空間にＨｅガスを供給することにより、サセプタ４に載置された基板Ｇを冷却（温度調整）することができるように構成されている。また、堀込部に複数の微小な凸部を設け、外縁部と凸部により基板Ｇを支持するようにしてもよい。 Further, the upper surface of the susceptor 4 (electrostatic chuck 40) is a substrate mounting surface 4c on which the substrate G is mounted. The substrate mounting surface 4c has an outer edge portion (not shown) in contact with the outer peripheral portion of the back surface of the substrate G, and a digging portion (not shown) formed inside the outer edge portion. Further, the digging portion is configured to be able to supply a heat transfer gas such as He gas. By electrostatically adsorbing the substrate G by the electrostatic chuck 40, the outer peripheral portion of the back surface of the substrate G and the outer edge portion of the substrate mounting surface 4c are airtightly adsorbed. Further, the substrate G mounted on the susceptor 4 is cooled (temperature adjusted) by supplying He gas to the space formed as a gap between the back surface of the substrate G and the deepened portion of the substrate mounting surface 4c. It is configured to be able to. Further, a plurality of minute convex portions may be provided in the dug portion, and the substrate G may be supported by the outer edge portion and the convex portions.

チャンバ２の上部または上壁には、チャンバ２内に処理ガスを供給するとともに上部電極として機能するシャワーヘッド１１が、サセプタ４と対向するように設けられている。シャワーヘッド１１は、内部に処理ガスを拡散させるガス拡散空間１２が形成されているとともに、下面またはサセプタ４との対向面に処理ガスを吐出する複数の吐出孔１３が形成されている。このシャワーヘッド１１は接地されており、サセプタ４とともに一対の平行平板電極を構成している。なお、本実施形態では平行平板電極によりプラズマを生成する基板処理装置に本開示を適用した場合について説明するが、誘導結合によりプラズマを生成する基板処理装置に本開示を適用してもよく、また、その他の方法によりプラズマを生成する基板処理装置に本開示を適用してもよいことは勿論である。 A shower head 11 that supplies a processing gas into the chamber 2 and functions as an upper electrode is provided on the upper portion or the upper wall of the chamber 2 so as to face the susceptor 4. The shower head 11 is formed with a gas diffusion space 12 for diffusing the processing gas inside, and a plurality of discharge holes 13 for discharging the processing gas on the lower surface or the surface facing the susceptor 4. The shower head 11 is grounded and constitutes a pair of parallel plate electrodes together with the susceptor 4. In this embodiment, the case where the present disclosure is applied to a substrate processing apparatus that generates plasma by a parallel plate electrode will be described, but the present disclosure may be applied to a substrate processing apparatus that generates plasma by inductively coupled. Of course, the present disclosure may be applied to a substrate processing apparatus that generates plasma by other methods.

シャワーヘッド１１の上面にはガス導入口１４が設けられ、このガス導入口１４には、処理ガス供給管１５が接続されており、この処理ガス供給管１５には、バルブ１６およびマスフローコントローラ１７を介して、処理ガス供給源１８が接続されている。処理ガス供給源１８からは、例えば、エッチングのための処理ガスが供給される。処理ガスとしては、ハロゲン系のガス、Ｏ２ガス、Ａｒガス等、通常この分野で用いられるガスを用いることができる。 A gas introduction port 14 is provided on the upper surface of the shower head 11, a processing gas supply pipe 15 is connected to the gas introduction port 14, and a valve 16 and a mass flow controller 17 are connected to the processing gas supply pipe 15. The processing gas supply source 18 is connected via the device. For example, a processing gas for etching is supplied from the processing gas supply source 18. The treatment gas, a halogen-based gas, O 2 gas, Ar gas or the like, usually it is possible to use a gas used in this field.

チャンバ２の底壁には排気管１９が接続されており、この排気管１９には排気装置２０が接続されている。排気装置２０はターボ分子ポンプなどの真空ポンプを備えており、これによりチャンバ２内を所定の減圧雰囲気まで真空引き可能なように構成されている。チャンバ２の側壁には、基板Ｇを搬入出するための搬入出口２１が形成されているとともに、この搬入出口２１を開閉するゲートバルブ２２が設けられており、搬入出口２１の開放時に、基板Ｇが、搬送部材としての搬送アーム５０（後述する図２参照）により下方から支持された状態で搬入出口２１及びゲートバルブ２２を介して隣接する図示しない搬送室との間で搬送されるように構成されている。 An exhaust pipe 19 is connected to the bottom wall of the chamber 2, and an exhaust device 20 is connected to the exhaust pipe 19. The exhaust device 20 includes a vacuum pump such as a turbo molecular pump, whereby the inside of the chamber 2 can be evacuated to a predetermined depressurized atmosphere. An carry-in / out port 21 for carrying in / out the substrate G is formed on the side wall of the chamber 2, and a gate valve 22 for opening / closing the carry-in / out port 21 is provided. When the carry-in / out port 21 is opened, the board G is provided. Is configured to be transported to and from an adjacent transfer chamber (not shown) via the carry-in outlet 21 and the gate valve 22 in a state of being supported from below by a transfer arm 50 as a transfer member (see FIG. 2 to be described later). Has been done.

チャンバ２の底壁およびサセプタ４には、これらを貫通する挿通孔７が、サセプタ４の外周部位置および中央部位置（外周部位置よりも内側または中央寄り位置）にそれぞれ形成されている。挿通孔７にはそれぞれ、基板Ｇを下方から支持して昇降させるリフトピン８がサセプタ４の基板載置面４ｃに対して突没可能に挿入されている。リフトピン８はそれぞれ、突出時に基板Ｇの外周部および中央部に当接するように設けられており、図示しない位置決め用ブッシュによって径方向または幅方向に位置決めされて挿通孔７内に挿入されている。 In the bottom wall of the chamber 2 and the susceptor 4, insertion holes 7 penetrating the susceptor 4 are formed at the outer peripheral portion position and the central portion position (inside or closer to the center position than the outer peripheral portion position) of the susceptor 4, respectively. A lift pin 8 that supports and raises and lowers the substrate G from below is inserted into each of the insertion holes 7 so as to be retractable with respect to the substrate mounting surface 4c of the susceptor 4. Each of the lift pins 8 is provided so as to abut on the outer peripheral portion and the central portion of the substrate G at the time of protrusion, and is positioned in the radial direction or the width direction by a positioning bush (not shown) and inserted into the insertion hole 7.

リフトピン８は、下部がチャンバ２の外側に突出している。リフトピン８の下部には、フランジ２６が形成されており、フランジ２６には、リフトピン８を囲繞するように設けられた伸縮可能なベローズ２７の一端部（下端部）が接続され、このベローズ２７の他端部（上端部）は、チャンバ２の底壁に接続されている。またはこのベローズ２７の他端部（上端部）はサセプタ４の底壁に接続するようにしてもよい。これにより、ベローズ２７は、リフトピン８の昇降に追従して伸縮するとともに、挿通孔７とリフトピン８との隙間を密封している。 The lower part of the lift pin 8 projects to the outside of the chamber 2. A flange 26 is formed in the lower portion of the lift pin 8, and one end (lower end) of a stretchable bellows 27 provided so as to surround the lift pin 8 is connected to the flange 26. The other end (upper end) is connected to the bottom wall of the chamber 2. Alternatively, the other end (upper end) of the bellows 27 may be connected to the bottom wall of the susceptor 4. As a result, the bellows 27 expands and contracts according to the ascent and descent of the lift pin 8 and seals the gap between the insertion hole 7 and the lift pin 8.

ここで、挿通孔７及びリフトピン８の配置について、図２を用いてさらに説明する。図２は、基板処理装置１の平面方向の概略断面図の一例である。なお、図２において、搬送アーム５０に保持された基板Ｇを載置領域４ｄの上方に配置した際における搬送アーム５０及び基板Ｇの位置を二点鎖線で示す。 Here, the arrangement of the insertion hole 7 and the lift pin 8 will be further described with reference to FIG. FIG. 2 is an example of a schematic cross-sectional view of the substrate processing apparatus 1 in the plane direction. In FIG. 2, the positions of the transfer arm 50 and the substrate G when the substrate G held by the transfer arm 50 is arranged above the mounting region 4d are shown by a two-dot chain line.

図２に示すように、基板Ｇ及び基板Ｇが載置されるサセプタ４の基板載置面４ｃは、平面視して、短辺（Ｙ方向）と長辺（Ｘ方向）とを有する矩形状を有している。また、基板載置面４ｃは、基板Ｇに対応した載置領域４ｄ（図２において、破線で示す。）を有する。基板Ｇをサセプタ４に載置する際、基板Ｇは載置領域４ｄに載置される。なお、図２において、載置領域４ｄの中心線４ｅ（一方の長辺の中点と他方の長辺の中点とを結ぶ線）及び中心線４ｆ（一方の短辺の中点と他方の短辺の中点とを結ぶ線）を一点鎖線で示す。また、図２において、便宜上、載置領域４ｄを示す破線が基板Ｇを示す二点鎖線よりも内側に描かれているが、載置領域４ｄが基板Ｇの外周よりも内側に規定されることを意味するものではなく、載置領域４ｄは基板Ｇと同一の形状であり同一の面積を持つことが望ましい。また、載置領域４ｄは基板Ｇを内包する形状および面積を有する領域であってもよい。 As shown in FIG. 2, the substrate mounting surface 4c of the substrate G and the susceptor 4 on which the substrate G is mounted has a rectangular shape having a short side (Y direction) and a long side (X direction) in a plan view. have. Further, the substrate mounting surface 4c has a mounting region 4d (indicated by a broken line in FIG. 2) corresponding to the substrate G. When the substrate G is mounted on the susceptor 4, the substrate G is mounted in the mounting region 4d. In FIG. 2, the center line 4e (the line connecting the midpoint of one long side and the midpoint of the other long side) and the center line 4f (the midpoint of one short side and the other) of the mounting area 4d. The line connecting the midpoint of the short side) is indicated by a one-point chain line. Further, in FIG. 2, for convenience, the broken line indicating the mounting area 4d is drawn inside the two-dot chain line indicating the substrate G, but the mounting area 4d is defined inside the outer periphery of the substrate G. It is desirable that the mounting area 4d has the same shape as the substrate G and has the same area. Further, the mounting region 4d may be a region having a shape and an area including the substrate G.

サセプタ４は、挿通孔７として挿通孔７ａ〜７ｄを有する。挿通孔７ａ〜７ｃは、載置領域４ｄの外周部に設けられている。挿通孔７ｄは、載置領域４ｄの外周部に囲われる載置領域４ｄの面中央部に設けられている。挿通孔７ａ〜７ｄには、リフトピン８としてリフトピン８ａ〜８ｄが配置される。 The susceptor 4 has insertion holes 7a to 7d as insertion holes 7. The insertion holes 7a to 7c are provided on the outer peripheral portion of the mounting region 4d. The insertion hole 7d is provided in the center of the surface of the mounting area 4d surrounded by the outer peripheral portion of the mounting area 4d. Lift pins 8a to 8d are arranged as lift pins 8 in the insertion holes 7a to 7d.

矩形状の載置領域４ｄの角部には、挿通孔７ａが設けられている。図２に示す例において、挿通孔７ａは、中心線４ｅ及び中心線４ｆを対象軸として、載置領域４ｄ内に４つ設けられている。各挿通孔７ａには、それぞれリフトピン８ａが配置されている。以下、４つのリフトピン８ａを第１グループＧｒ．１とも称する。 An insertion hole 7a is provided at a corner of the rectangular mounting area 4d. In the example shown in FIG. 2, four insertion holes 7a are provided in the mounting region 4d with the center line 4e and the center line 4f as the target axes. A lift pin 8a is arranged in each insertion hole 7a. Hereinafter, the four lift pins 8a are referred to as the first group Gr. Also referred to as 1.

矩形状の載置領域４ｄの短辺中央部（中心線４ｆを対象軸とする左右（Ｙ方向）２つの角部の間）には、挿通孔７ｂが設けられている。図２に示す例において、一方の短辺中央部には、中心線４ｆを対象軸として、２つの挿通孔７ｂが設けられている。同様に、他方の短辺中央部には、中心線４ｆを対象軸として、２つの挿通孔７ｂが設けられている。載置領域４ｄ内には、４つの挿通孔７ｂが設けられている。各挿通孔７ｂには、それぞれリフトピン８ｂが配置されている。以下、４つのリフトピン８ｂを第２グループＧｒ．２とも称する。 An insertion hole 7b is provided at the center of the short side of the rectangular mounting region 4d (between the two left and right (Y direction) corners with the center line 4f as the target axis). In the example shown in FIG. 2, two insertion holes 7b are provided in the central portion of one of the short sides with the center line 4f as the target axis. Similarly, two insertion holes 7b are provided in the center of the other short side with the center line 4f as the target axis. Four insertion holes 7b are provided in the mounting area 4d. A lift pin 8b is arranged in each insertion hole 7b. Hereinafter, the four lift pins 8b are referred to as the second group Gr. Also referred to as 2.

矩形状の載置領域４ｄの長辺中央部（中心線４ｅを対象軸とする前後（Ｘ方向）２つの角部の間）には、挿通孔７ｃが設けられている。図２に示す例において、一方の長辺中央部には、中心線４ｅ上に挿通孔７ｃが設けられている。同様に、他方の長辺中央部には、中心線４ｅ上に挿通孔７ｃが設けられている。載置領域４ｄ内には、２つの挿通孔７ｃが設けられている。各挿通孔７ｃには、それぞれリフトピン８ｃが配置されている。以下、２つのリフトピン８ｃを第３グループＧｒ．３とも称する。 An insertion hole 7c is provided at the center of the long side of the rectangular mounting region 4d (between the two corners of the front and rear (X direction) with the center line 4e as the target axis). In the example shown in FIG. 2, an insertion hole 7c is provided on the center line 4e at the center of one of the long sides. Similarly, an insertion hole 7c is provided on the center line 4e at the center of the other long side. Two insertion holes 7c are provided in the mounting area 4d. A lift pin 8c is arranged in each insertion hole 7c. Hereinafter, the two lift pins 8c are referred to as the third group Gr. Also referred to as 3.

矩形状の載置領域４ｄの中央付近の面中央部には、挿通孔７ｄが設けられている。図２に示す例において、挿通孔７ｄは、中心線４ｅ上に設けられ、かつ、中心線４ｆを対象軸として２つ設けられている。各挿通孔７ｄには、それぞれリフトピン８ｄが配置されている。以下、２つのリフトピン８ｄを第４グループＧｒ．４とも称する。 An insertion hole 7d is provided in the center of the surface near the center of the rectangular mounting area 4d. In the example shown in FIG. 2, the insertion holes 7d are provided on the center line 4e, and two insertion holes 7d are provided with the center line 4f as the target axis. A lift pin 8d is arranged in each insertion hole 7d. Hereinafter, the two lift pins 8d are referred to as the fourth group Gr. Also referred to as 4.

図３は、リフトピン８ａ〜８ｄを駆動させる駆動機構の構成を示すブロック図の一例である。 FIG. 3 is an example of a block diagram showing a configuration of a drive mechanism for driving the lift pins 8a to 8d.

リフトピン８ａ〜８ｄはそれぞれ駆動部９ａ〜９ｄに接続される。リフトピン８ａ〜８ｄはこの駆動部９ａ〜９ｄの駆動によって昇降することによりサセプタ４の基板載置面４ｃに対して突出および没入するように構成されている。駆動部９ａ〜９ｄはそれぞれ、例えばステッピングモータを用いて構成される。なお、リフトピン８ａ〜８ｄは、図３に示すように、個別に駆動することができるように構成されているものとして説明したが、これに限られるものではなく、グループ（第１グループＧｒ．１〜第４グループＧｒ．４）ごとに駆動することができるように構成されていてもよい。この構成によれば、駆動部（ステッピングモータ）の数を削減することができる。 The lift pins 8a to 8d are connected to the drive units 9a to 9d, respectively. The lift pins 8a to 8d are configured to protrude and immerse in the substrate mounting surface 4c of the susceptor 4 by moving up and down by the drive of the drive units 9a to 9d. Each of the drive units 9a to 9d is configured by using, for example, a stepping motor. Although the lift pins 8a to 8d have been described as being configured so that they can be individually driven as shown in FIG. 3, the lift pins 8a to 8d are not limited to this, and are not limited to the group (first group Gr.1). It may be configured so that it can be driven for each of the fourth group Gr.4). According to this configuration, the number of drive units (stepping motors) can be reduced.

駆動部９ａ〜９ｄの駆動は、マイクロプロセッサ（コンピュータ）を備えたコントローラ３１によって別個に制御される構成となっており、これにより、リフトピン８ａ〜８ｄはそれぞれ互いに独立して昇降可能に構成されている。コントローラ３１には、工程管理者が駆動部９ａ〜９ｄの駆動を管理するためにコマンドの入力操作等を行うキーボードや、駆動部９ａ〜９ｄの駆動状況を可視化して表示するディスプレイ等からなるユーザインタフェース３２と、駆動部９ａ〜９ｄの駆動をコントローラ３１の制御にて実現するための制御プログラムや駆動条件データ等が記録されたレシピが格納された記憶部３３とが接続されている。そして、必要に応じて、ユーザインタフェース３２からの指示等にて任意のレシピを記憶部３３から呼び出してコントローラ３１に実行させることで、コントローラ３１の制御下で駆動部９ａ〜９ｄの駆動および停止が行われる。前記レシピは、例えば、ＣＤ−ＲＯＭ、ハードディスク、フラッシュメモリなどのコンピュータ読み取り可能な記憶媒体に格納された状態のものを利用したり、あるいは、他の装置から、例えば専用回線を介して随時伝送させて利用したりすることも可能である。 The drive of the drive units 9a to 9d is separately controlled by a controller 31 equipped with a microprocessor (computer), whereby the lift pins 8a to 8d are configured to be able to move up and down independently of each other. There is. The controller 31 is a user including a keyboard for the process manager to input commands for managing the driving of the driving units 9a to 9d, a display for visualizing and displaying the driving status of the driving units 9a to 9d, and the like. The interface 32 is connected to a storage unit 33 in which a control program for realizing driving of the drive units 9a to 9d under the control of the controller 31, a recipe in which drive condition data and the like are recorded are stored. Then, if necessary, an arbitrary recipe is called from the storage unit 33 by an instruction from the user interface 32 or the like and executed by the controller 31, so that the drive units 9a to 9d can be driven and stopped under the control of the controller 31. It will be done. The recipe may be stored in a computer-readable storage medium such as a CD-ROM, a hard disk, or a flash memory, or may be transmitted from another device at any time via, for example, a dedicated line. It is also possible to use it.

コントローラ３１、ユーザインタフェース３２および記憶部３３は、駆動部９ａ〜９ｄによるリフトピン８ａ〜８ｄの昇降を制御する制御部を構成し、サセプタ４、リフトピン８ａ〜８ｄ、駆動部９ａ〜９ｄおよび制御部は基板載置機構を構成する。 The controller 31, the user interface 32, and the storage unit 33 constitute a control unit that controls the raising and lowering of the lift pins 8a to 8d by the drive units 9a to 9d. It constitutes a board mounting mechanism.

次に、基板処理装置１における基板Ｇをサセプタ４に受け渡す基板受け渡し方法（載置方法）について、図４及び図５を用いて説明する。 Next, a substrate delivery method (mounting method) in which the substrate G in the substrate processing apparatus 1 is delivered to the susceptor 4 will be described with reference to FIGS. 4 and 5.

図４は、基板処理装置１の基板受け渡し動作の一例を説明するフローチャートである。図５は、基板処理装置１の基板受け渡し動作時におけるリフトピン８の動作の一例を示すタイムチャートである。 FIG. 4 is a flowchart illustrating an example of a substrate delivery operation of the substrate processing apparatus 1. FIG. 5 is a time chart showing an example of the operation of the lift pin 8 during the substrate delivery operation of the substrate processing device 1.

ステップＳ１０１において、搬送アーム５０に保持された基板Ｇをリフトピン８ａ〜８ｄに受け渡す。具体的には、コントローラ３１は、ゲートバルブ２２を開放させる。次に、コントローラ３１は、搬送アーム５０を制御して、基板Ｇを保持した搬送アーム５０を搬入出口２１からチャンバ２内に挿入し、基板Ｇをサセプタ４の上方まで搬送させる。次に、コントローラ３１は、駆動部９ａ〜９ｄを制御して、リフトピン８ａ〜８ｄを搬送アーム５０よりも高く突出させる。これにより、基板Ｇは、搬送アーム５０からリフトピン８ａ〜８ｄに受け渡される。なお、図２に示すように、リフトピン８ａ〜８ｄは、搬送アーム５０と接触しないように配置されている。次に、コントローラ３１は、搬送アーム５０を制御して、搬送アーム５０を搬入出口２１から退避させる。次に、コントローラ３１は、ゲートバルブ２２を閉じる。 In step S101, the substrate G held by the transfer arm 50 is delivered to the lift pins 8a to 8d. Specifically, the controller 31 opens the gate valve 22. Next, the controller 31 controls the transport arm 50 to insert the transport arm 50 holding the substrate G into the chamber 2 from the carry-in outlet 21, and transport the substrate G to the upper part of the susceptor 4. Next, the controller 31 controls the drive units 9a to 9d to project the lift pins 8a to 8d higher than the transfer arm 50. As a result, the substrate G is delivered from the transfer arm 50 to the lift pins 8a to 8d. As shown in FIG. 2, the lift pins 8a to 8d are arranged so as not to come into contact with the transport arm 50. Next, the controller 31 controls the transport arm 50 to retract the transport arm 50 from the carry-in / outlet 21. Next, the controller 31 closes the gate valve 22.

ここで、基板Ｇを支持するリフトピン８ａ〜８ｄの高さは、図５に示すように、「第３グループＧｒ．３のリフトピン８ｃの高さ＜第４グループＧｒ．４のリフトピン８ｄの高さ＜第２グループＧｒ．２のリフトピン８ｂの高さ＜第１グループＧｒ．１のリフトピン８ａの高さ」となるようにオフセットされている。 Here, as shown in FIG. 5, the heights of the lift pins 8a to 8d that support the substrate G are "the height of the lift pins 8c of the third group Gr.3 <the height of the lift pins 8d of the fourth group Gr.4". It is offset so that <the height of the lift pin 8b of the second group Gr.2 <the height of the lift pin 8a of the first group Gr.1 ".

なお、リフトピン８ａ〜８ｄは、搬送アーム５０よりも下側で、リフトピン８ａ〜８ｄ間のオフセット関係を先に形成した後に、リフトピン８ａ〜８ｄを一括して上昇させてもよい。これにより、第１グループＧｒ．１のリフトピン８ａ、第２グループＧｒ．２のリフトピン８ｂ、第４グループＧｒ．４のリフトピン８ｄ、第３グループＧｒ．３のリフトピン８ｃの順番で基板Ｇに接触する。 The lift pins 8a to 8d may be raised below the transport arm 50 at once after forming an offset relationship between the lift pins 8a to 8d first. As a result, the first group Gr. 1 lift pin 8a, 2nd group Gr. 2 lift pin 8b, 4th group Gr. Lift pin 8d of 4, Group 3 Gr. The lift pins 8c of 3 come into contact with the substrate G in this order.

また、リフトピン８ａ〜８ｄは、同時に上昇していき、それぞれ所定の高さで停止することにより、リフトピン８ａ〜８ｄ間のオフセット関係を形成して、搬送アーム５０からリフトピン８ａ〜８ｄに基板Ｇを受け渡してもよい。これにより、第１グループＧｒ．１のリフトピン８ａ、第２グループＧｒ．２のリフトピン８ｂ、第３グループＧｒ．３のリフトピン８ｃ、第４グループＧｒ．４のリフトピン８ｄが同時に基板Ｇに接触し、さらに上昇する。そして、第３グループＧｒ．３のリフトピン８ｃ、第４グループＧｒ．４のリフトピン８ｄ、第２グループＧｒ．２のリフトピン８ｂ、第１グループＧｒ．１のリフトピン８ａの順番で停止する。 Further, the lift pins 8a to 8d rise at the same time and stop at predetermined heights to form an offset relationship between the lift pins 8a to 8d, and the substrate G is attached to the lift pins 8a to 8d from the transfer arm 50. You may hand it over. As a result, the first group Gr. 1 lift pin 8a, 2nd group Gr. 2 lift pin 8b, 3rd group Gr. 3 lift pin 8c, 4th group Gr. The lift pin 8d of 4 comes into contact with the substrate G at the same time and further rises. Then, the third group Gr. 3 lift pin 8c, 4th group Gr. 4 lift pin 8d, 2nd group Gr. 2 lift pin 8b, 1st group Gr. Stop in the order of the lift pin 8a of 1.

ここで、リフトピン８ａ〜８ｄに受け渡された際の基板Ｇの形状について、図６を用いて説明する。図６は、リフトピン８ａ〜８ｄに受け渡された際の基板Ｇの断面概念図の一例である。図６（Ａ）は基板Ｇを短辺側から見た図であり、図６（Ｂ）は基板Ｇを長辺側から見た図である。なお、図６においては、基板Ｇの撓みを誇張して図示している。 Here, the shape of the substrate G when delivered to the lift pins 8a to 8d will be described with reference to FIG. FIG. 6 is an example of a cross-sectional conceptual diagram of the substrate G when it is handed over to the lift pins 8a to 8d. FIG. 6A is a view of the substrate G viewed from the short side, and FIG. 6B is a view of the substrate G viewed from the long side. In FIG. 6, the bending of the substrate G is exaggerated and shown.

図６（Ａ）の断面概念図２０１は、基板ＧのＡ−Ａ断面（図２参照）模式図である。Ａ−Ａ断面において、基板Ｇは、第３グループＧｒ．３のリフトピン８ｃで支持される基板Ｇの長辺中央部が、第４グループＧｒ．４のリフトピン８ｄで支持される基板Ｇの面中央部よりも低くなるように支持されている。換言すれば、基板Ｇの一方の長辺の長辺中央部と基板Ｇの他方の長辺の長辺中央部とを結ぶ線上において、面中央部が長辺中央部よりも高くなる形状で、基板Ｇはリフトピン８に支持されている。 FIG. 201 is a schematic cross-sectional view taken along the line AA of the substrate G (see FIG. 2). In the AA cross section, the substrate G is the third group Gr. The central portion of the long side of the substrate G supported by the lift pin 8c of No. 3 is the fourth group Gr. It is supported so as to be lower than the surface center portion of the substrate G supported by the lift pin 8d of No. 4. In other words, on the line connecting the central portion of the long side of one long side of the substrate G and the central portion of the long side of the other long side of the substrate G, the central portion of the surface is higher than the central portion of the long side. The substrate G is supported by the lift pin 8.

図６（Ａ）の断面概念図２０２は、基板ＧのＢ−Ｂ断面（図２参照）模式図である。Ｂ−Ｂ断面において、基板Ｇは、第２グループＧｒ．２のリフトピン８ｂで支持される基板Ｇの短辺中央部が、第１グループＧｒ．１のリフトピン８ａで支持される基板Ｇの角部よりも低くなるように支持されている。換言すれば、基板Ｇの外周側の短辺において、短辺中央部から角部に向かって高くなる形状で、基板Ｇはリフトピン８に支持されている。 FIG. 202 is a schematic cross-sectional view taken along the line BB of the substrate G (see FIG. 2). In the BB cross section, the substrate G is the second group Gr. The central portion of the short side of the substrate G supported by the lift pin 8b of No. 2 is the first group Gr. It is supported so as to be lower than the corner portion of the substrate G supported by the lift pin 8a of 1. In other words, the substrate G is supported by the lift pin 8 in a shape that rises from the central portion of the short side toward the corner portion on the short side on the outer peripheral side of the substrate G.

図６（Ｂ）の断面概念図２０３は、基板ＧのＣ−Ｃ断面（図２参照）模式図である。Ｃ−Ｃ断面において、基板Ｇは、第３グループＧｒ．３のリフトピン８ｃで支持される基板Ｇの長辺中央部が、第１グループＧｒ．１のリフトピン８ａで支持される基板Ｇの角部よりも低くなるように支持されている。換言すれば、基板Ｇの外周側の長辺において、長辺中央部から角部に向かって高くなる形状で、基板Ｇはリフトピン８に支持されている。 FIG. 203 is a schematic cross-sectional view taken along the line CC of the substrate G (see FIG. 2). In the CC cross section, the substrate G is the third group Gr. The central portion of the long side of the substrate G supported by the lift pin 8c of No. 3 is the first group Gr. It is supported so as to be lower than the corner portion of the substrate G supported by the lift pin 8a of 1. In other words, the substrate G is supported by the lift pin 8 in a shape that rises from the central portion of the long side toward the corner portion on the long side on the outer peripheral side of the substrate G.

図６（Ｂ）の断面概念図２０４は、基板ＧのＤ−Ｄ断面（図２参照）模式図である。Ｄ−Ｄ断面において、基板Ｇは、第４グループＧｒ．４のリフトピン８ｄで支持される基板Ｇの面中央部が、第２グループＧｒ．２のリフトピン８ｂで支持される基板Ｇの短辺中央部よりも低くなるように支持されている。換言すれば、基板Ｇの一方の短辺の短辺中央部と基板Ｇの他方の短辺の短辺中央部とを結ぶ線上において、面中央部から短辺中央部に向かって高くなる形状で、基板Ｇはリフトピン８に支持されている。 FIG. 204 is a schematic cross-sectional view (see FIG. 2) of the substrate G. In the DD cross section, the substrate G is the fourth group Gr. The central portion of the surface of the substrate G supported by the lift pin 8d of No. 4 is the second group Gr. It is supported so as to be lower than the central portion of the short side of the substrate G supported by the lift pin 8b of 2. In other words, on the line connecting the central portion of the short side of one short side of the substrate G and the central portion of the short side of the other short side of the substrate G, the shape increases from the central portion of the surface toward the central portion of the short side. , The substrate G is supported by the lift pin 8.

図４に戻り、ステップＳ１０２において、コントローラ３１は、駆動部９ａ〜９ｄを制御して、リフトピン８ａ〜８ｄを下降させる。ここでは、図６に示すように、コントローラ３１は、リフトピン８ａ〜８ｄの高さのオフセットを維持したまま、リフトピン８ａ〜８ｄを下降させる。そして、リフトピン８ａ〜８ｄの高さのオフセット量の違いにより、ステップＳ１０３において、第３グループＧｒ．３のリフトピン８ｃが挿通孔７ｃに収納される。これにより、基板Ｇの長辺中央部が最初にサセプタ４の基板載置面４ｃに載置される。 Returning to FIG. 4, in step S102, the controller 31 controls the drive units 9a to 9d to lower the lift pins 8a to 8d. Here, as shown in FIG. 6, the controller 31 lowers the lift pins 8a to 8d while maintaining the height offset of the lift pins 8a to 8d. Then, in step S103, the third group Gr. The lift pin 8c of 3 is housed in the insertion hole 7c. As a result, the central portion of the long side of the substrate G is first mounted on the substrate mounting surface 4c of the susceptor 4.

ステップＳ１０４において、コントローラ３１は、駆動部９ｄを制御して、リフトピン８ｄを下降させる。この間、リフトピン８ａ及びリフトピン８ｂは、ステップＳ１０３時の高さで停止している。なお、リフトピン８ｃは挿通孔７ｃに収納されており、ステップＳ１０３時の高さで停止している。そして、ステップＳ１０５において、第４グループＧｒ．４のリフトピン８ｄが挿通孔７ｄに収納される。これにより、基板Ｇの面中央部が２番目にサセプタ４の基板載置面４ｃに載置される。 In step S104, the controller 31 controls the drive unit 9d to lower the lift pin 8d. During this time, the lift pin 8a and the lift pin 8b are stopped at the height at step S103. The lift pin 8c is housed in the insertion hole 7c and is stopped at the height at step S103. Then, in step S105, the fourth group Gr. The lift pin 8d of 4 is housed in the insertion hole 7d. As a result, the central portion of the surface of the substrate G is secondly mounted on the substrate mounting surface 4c of the susceptor 4.

ステップＳ１０６において、コントローラ３１は、駆動部９ａ，９ｂを制御して、リフトピン８ａ，８ｂを下降させる。ここでは、図６に示すように、コントローラ３１は、リフトピン８ａ，８ｂの高さのオフセットを維持したまま、リフトピン８ａ，８ｂを下降させる。なお、リフトピン８ｃ，８ｄは挿通孔７ｃ，７ｄにそれぞれ収納されており、ステップＳ１０５時の高さで停止している。そして、リフトピン８ａ，８ｂの高さのオフセット量の違いにより、ステップＳ１０７において、第２グループＧｒ．２のリフトピン８ｂが挿通孔７ｂに収納される。これにより、基板Ｇの短辺中央部が３番目にサセプタ４の基板載置面４ｃに載置される。 In step S106, the controller 31 controls the drive units 9a and 9b to lower the lift pins 8a and 8b. Here, as shown in FIG. 6, the controller 31 lowers the lift pins 8a and 8b while maintaining the height offset of the lift pins 8a and 8b. The lift pins 8c and 8d are housed in the insertion holes 7c and 7d, respectively, and are stopped at the height at step S105. Then, in step S107, the second group Gr. The lift pin 8b of 2 is housed in the insertion hole 7b. As a result, the central portion of the short side of the substrate G is placed third on the substrate mounting surface 4c of the susceptor 4.

ステップＳ１０８において、コントローラ３１は、駆動部９ａを制御して、リフトピン８ａを下降させる。なお、リフトピン８ｂ〜８ｄは挿通孔７ｂ〜７ｄにそれぞれ収納されており、ステップＳ１０７時の高さで停止している。そして、ステップＳ１０９において、第１グループＧｒ．１のリフトピン８ａが挿通孔７ａに収納される。これにより、基板Ｇの角部が最後にサセプタ４の基板載置面４ｃに載置される。 In step S108, the controller 31 controls the drive unit 9a to lower the lift pin 8a. The lift pins 8b to 8d are housed in the insertion holes 7b to 7d, respectively, and are stopped at the height at step S107. Then, in step S109, the first group Gr. The lift pin 8a of 1 is housed in the insertion hole 7a. As a result, the corners of the substrate G are finally mounted on the substrate mounting surface 4c of the susceptor 4.

図７は、基板Ｇの撓みの一例を説明する図である。図７において、上段には、基板Ｇを中心線４ｅ及び中心線４ｆで分割した４分の１の領域における基板Ｇの撓みを、等高線と、等高線の間の濃淡で示す。ここでは、左下が、基板Ｇの中央（Ｃｅｎｔｅｒ）となる。即ち、右上が基板Ｇの角部に対応し、左上が基板Ｇの短辺中央部に対応し、右下が基板Ｇの長辺中央部に対応し、左下が基板Ｇの面中央部に対応する。また、基板Ｇの撓みは、リフトピン８ａの高さを基準（０）として、下方向に撓むほど濃く（ドットが密に）、上方向に撓むほど淡く（ドットが疎に）なるものとして図示している。また、図７において、下段には、Ａ−Ａ断面において各状態における基板Ｇの状態を模式的に示す。 FIG. 7 is a diagram illustrating an example of bending of the substrate G. In FIG. 7, in the upper part, the deflection of the substrate G in the quarter region obtained by dividing the substrate G by the center line 4e and the center line 4f is shown by the shade between the contour lines. Here, the lower left is the center of the substrate G. That is, the upper right corresponds to the corner of the substrate G, the upper left corresponds to the center of the short side of the substrate G, the lower right corresponds to the center of the long side of the substrate G, and the lower left corresponds to the center of the surface of the substrate G. do. Further, the deflection of the substrate G is assumed to be thicker as it bends downward (dense dots) and lighter as it bends upward (dots become sparse) based on the height of the lift pin 8a (0). It is shown in the figure. Further, in FIG. 7, the lower part schematically shows the state of the substrate G in each state in the AA cross section.

また、図７（Ａ）は、基板Ｇがリフトピン８に受け渡された状態（ステップＳ１０１参照）を示す。図７（Ｂ）は、基板Ｇの長辺中央部が基板載置面４ｃに載置された状態（ステップＳ１０３参照）を示す。図７（Ｃ）は、基板Ｇの面中央部が基板載置面４ｃに載置された状態（ステップＳ１０５参照）を示す。 Further, FIG. 7A shows a state in which the substrate G is delivered to the lift pin 8 (see step S101). FIG. 7B shows a state in which the central portion of the long side of the substrate G is mounted on the substrate mounting surface 4c (see step S103). FIG. 7C shows a state in which the central portion of the surface of the substrate G is mounted on the substrate mounting surface 4c (see step S105).

ステップＳ１０１において、「第３グループＧｒ．３のリフトピン８ｃの高さ＜第４グループＧｒ．４のリフトピン８ｄの高さ＜第２グループＧｒ．２のリフトピン８ｂの高さ＜第１グループＧｒ．１のリフトピン８ａの高さ」となるようにオフセットされて基板Ｇが支持されている。これにより、図７（Ａ）に示すように、「基板Ｇの長辺中央部の高さ＜基板Ｇの面中央部の高さ＜基板Ｇの短辺中央部の高さ＜基板Ｇの角部の高さ」となるように撓んだ状態で基板Ｇは保持される。 In step S101, "the height of the lift pin 8c of the third group Gr.3 <the height of the lift pin 8d of the fourth group Gr.4 <the height of the lift pin 8b of the second group Gr.2 <the height of the first group Gr.1". The substrate G is supported by being offset so as to be the height of the lift pin 8a of the above. As a result, as shown in FIG. 7A, "height of the central portion of the long side of the substrate G <height of the central portion of the surface of the substrate G <height of the central portion of the short side of the substrate G <angle of the substrate G". The substrate G is held in a state of being bent so as to be "the height of the portion".

ステップＳ１０３において、基板Ｇの長辺中央部３０１を先に載置させる。この状態においては、図７（Ｂ）に示すように、基板Ｇの面中央部が浮き上がっている。 In step S103, the central portion 301 of the long side of the substrate G is placed first. In this state, as shown in FIG. 7B, the central portion of the surface of the substrate G is raised.

ステップＳ１０４において、第１グループＧｒ．１のリフトピン８ａ及び第２グループＧｒ．２のリフトピン８ｂを停止させたまま、第４グループＧｒ．４のリフトピン８ｄを下降させる。これにより、図７（Ｃ）に示すように、基板Ｇの面中央部３０２の浮き上がりを解消して、基板Ｇの面中央部３０２を載置させることができる。これにより、基板Ｇの長辺中央を通る中心線４ｅ（図２参照）に沿って、基板Ｇをサセプタ４に載置させることができる。 In step S104, the first group Gr. 1 lift pin 8a and 2nd group Gr. With the lift pin 8b of No. 2 stopped, the fourth group Gr. The lift pin 8d of 4 is lowered. As a result, as shown in FIG. 7C, the floating of the surface center portion 302 of the substrate G can be eliminated and the surface center portion 302 of the substrate G can be placed. As a result, the substrate G can be placed on the susceptor 4 along the center line 4e (see FIG. 2) passing through the center of the long side of the substrate G.

以降、基板Ｇの短辺中央部、基板Ｇの角部の順番でサセプタ４に載置させることにより、基板Ｇが凸状に変形して載置されることを防止することができる。 After that, by mounting the substrate G on the susceptor 4 in the order of the central portion of the short side of the substrate G and the corner portion of the substrate G, it is possible to prevent the substrate G from being deformed into a convex shape and mounted.

以上、本実施形態に係る基板載置機構を有する基板処理装置１によれば、基板Ｇをサセプタ４に載置する際、凸状に変形するおそれのある基板Ｇの長辺中央部を先にサセプタ４に載置させることにより、基板Ｇの長辺中央部における凸状の変形を抑制することができる。また、基板Ｇの角部よりも先に基板Ｇの短辺中央部を設置させることにより、基板Ｇの短辺中央部における凸状の変形を抑制することができる。これにより、基板Ｇの裏面の外周部とサセプタ４の基板載置面４ｃの外縁部とが、気密に吸着される。これにより、基板Ｇの裏面と基板載置面４ｃの堀込部との間にＨｅガスを供給した際、Ｈｅガスの漏れの発生を防止することができる。 As described above, according to the substrate processing apparatus 1 having the substrate mounting mechanism according to the present embodiment, when the substrate G is mounted on the susceptor 4, the central portion of the long side of the substrate G, which may be deformed in a convex shape, is first placed. By placing it on the susceptor 4, it is possible to suppress the convex deformation in the central portion of the long side of the substrate G. Further, by installing the central portion of the short side of the substrate G before the corner portion of the substrate G, it is possible to suppress the convex deformation in the central portion of the short side of the substrate G. As a result, the outer peripheral portion of the back surface of the substrate G and the outer edge portion of the substrate mounting surface 4c of the susceptor 4 are airtightly adsorbed. As a result, when He gas is supplied between the back surface of the substrate G and the digging portion of the substrate mounting surface 4c, it is possible to prevent the occurrence of He gas leakage.

また、基板Ｇの面中央部をサセプタ４に載置させる際、第１グループＧｒ．１のリフトピン８ａ及び第２グループＧｒ．２のリフトピン８ｂを停止させたまま、第４グループＧｒ．４のリフトピン８ｄを下降させる。これにより、基板Ｇの面中央部における凸状の変形を抑制して、基板Ｇをサセプタ４に載置させることができる。これにより、基板Ｇの裏面と基板載置面４ｃの堀込部との間の空間の容積が増大することを防止することができる。 Further, when the central portion of the surface of the substrate G is placed on the susceptor 4, the first group Gr. 1 lift pin 8a and 2nd group Gr. With the lift pin 8b of No. 2 stopped, the fourth group Gr. The lift pin 8d of 4 is lowered. As a result, the substrate G can be placed on the susceptor 4 by suppressing the convex deformation in the central portion of the surface of the substrate G. This makes it possible to prevent the volume of the space between the back surface of the substrate G and the digging portion of the substrate mounting surface 4c from increasing.

以上、基板処理装置１について説明したが、本開示は上記実施形態等に限定されるものではなく、特許請求の範囲に記載された本開示の要旨の範囲内において、種々の変形、改良が可能である。 Although the substrate processing apparatus 1 has been described above, the present disclosure is not limited to the above-described embodiment and the like, and various modifications and improvements can be made within the scope of the gist of the present disclosure described in the claims. Is.

Ｇ 基板
１ 基板処理装置
２ チャンバ
４ サセプタ（載置台）
４ａ 基材
４ｂ 絶縁部材
４ｃ 基板載置面（載置面）
４ｄ 載置領域
４ｅ，４ｆ 中心線
７、７ａ〜７ｄ 挿通孔
８ リフトピン
８ａ リフトピン（第１のリフトピン）
８ｂ リフトピン（第２のリフトピン）
８ｃ リフトピン（第３のリフトピン）
８ｄ リフトピン（第４のリフトピン）
９ａ〜９ｄ 駆動部
３１ コントローラ（制御部）
４０ 静電チャック G Board 1 Board processing device 2 Chamber 4 Suceptor (mounting table)
4a Base material 4b Insulation member 4c Substrate mounting surface (mounting surface)
4d Mounting area 4e, 4f Center line 7, 7a to 7d Insertion hole 8 Lift pin 8a Lift pin (first lift pin)
8b lift pin (second lift pin)
8c lift pin (third lift pin)
8d lift pin (4th lift pin)
9a-9d Drive unit 31 Controller (control unit)
40 Electrostatic chuck

Claims (5)

可撓性を有する矩形状の基板を載置する載置面を有する載置台に、前記基板を載置する基板載置方法であって、
前記載置面は、前記基板に対応した載置領域を有し、
前記載置台は、
前記載置領域の角部において突没可能に設けられた第１のリフトピンと、
前記載置領域の短辺中央部において突没可能に設けられた第２のリフトピンと、
前記載置領域の長辺中央部において突没可能に設けられた第３のリフトピンと、
前記載置領域の面中央部において突没可能に設けられた第４のリフトピンと、を備え、
少なくとも、前記第３のリフトピンよりも前記第４のリフトピンが高く、前記第４のリフトピンよりも前記第２のリフトピンが高くなる状態で、前記第１乃至第４のリフトピンにより前記基板を支持する工程と、
前記基板を支持する工程の後、前記第１乃至第４のリフトピンを前記載置台に収納して前記基板を前記載置領域に載置する工程と、を有し、
前記基板を前記載置領域に載置する工程は、
少なくとも、最初に前記基板の長辺中央部が前記載置面に載置され、次に前記基板の面中央部が前記載置面に載置され、次に前記基板の短辺中央部が前記載置面に載置される、
基板載置方法。 A substrate mounting method for mounting the substrate on a mounting table having a mounting surface on which a flexible rectangular substrate is mounted.
The above-mentioned mounting surface has a mounting area corresponding to the substrate and has a mounting area.
The above-mentioned stand is
The first lift pin provided so as to be retractable at the corner of the previously described area,
A second lift pin provided so as to be retractable in the center of the short side of the previously described area, and
A third lift pin provided so as to be retractable at the center of the long side of the previously described area, and
A fourth lift pin, which is provided so as to be retractable in the center of the surface of the above-mentioned placement area, is provided.
At least, a step of supporting the substrate by the first to fourth lift pins in a state where the fourth lift pin is higher than the third lift pin and the second lift pin is higher than the fourth lift pin. When,
After the step of supporting the substrate, the first to fourth lift pins are housed in the previously described pedestal and the substrate is placed in the previously described mounting area.
The step of placing the substrate in the previously described placement area is
At least, the central portion of the long side of the substrate is first mounted on the front-described mounting surface, then the central portion of the surface of the substrate is mounted on the front-described mounting surface, and then the central portion of the short side of the substrate is placed in front. Placed on the written surface,
Board mounting method. 前記基板を支持する工程は、
前記第１のリフトピンが前記第２のリフトピンよりも高くなる状態で、前記基板を支持し、
前記基板を前記載置領域に載置する工程は、
前記基板の短辺中央部が前記載置面に載置された後に、前記基板の角部が前記載置面に載置される、
請求項１に記載の基板載置方法。 The step of supporting the substrate is
The substrate is supported with the first lift pin higher than the second lift pin.
The step of placing the substrate in the previously described placement area is
After the central portion of the short side of the substrate is placed on the previously described mounting surface, the corner portion of the substrate is placed on the previously described mounting surface.
The substrate mounting method according to claim 1. 前記基板を前記載置領域に載置する工程は、
前記基板の長辺中央部が前記載置面に載置された後、前記基板の面中央部を前記載置面に載置させる際、前記第４のリフトピンを降下させ、前記第１のリフトピン及び前記第２のリフトピンを停止させる、
請求項１または請求項２に記載の基板載置方法。 The step of placing the substrate in the previously described placement area is
After the central portion of the long side of the substrate is mounted on the previously described mounting surface, when the central portion of the surface of the substrate is mounted on the previously described mounting surface, the fourth lift pin is lowered to lower the first lift pin. And stop the second lift pin,
The substrate mounting method according to claim 1 or 2. 前記第１のリフトピン、前記第２のリフトピン、前記第３のリフトピン及び前記第４のリフトピンは、互いに独立して駆動する、
請求項１乃至請求項３のいずれか１項に記載の基板載置方法。 The first lift pin, the second lift pin, the third lift pin and the fourth lift pin are driven independently of each other.
The substrate mounting method according to any one of claims 1 to 3. 可撓性を有する矩形状の基板を載置する載置面及び前記載置面から突没可能に設けられたリフトピンを有する載置台と、
前記リフトピンを駆動する駆動部と、
前記駆動部を制御する制御部と、を備え、
前記載置面は、前記基板に対応した載置領域を有し、
前記リフトピンは、前記載置領域の角部において突没可能に設けられた第１のリフトピンと、前記載置領域の短辺中央部において突没可能に設けられた第２のリフトピンと、前記載置領域の長辺中央部において突没可能に設けられた第３のリフトピンと、前記載置領域の面中央部において突没可能に設けられた第４のリフトピンと、を有し、
前記制御部は、前記駆動部を制御して、
少なくとも、前記第３のリフトピンよりも前記第４のリフトピンが高く、前記第４のリフトピンよりも前記第２のリフトピンが高くなる状態で、前記第１乃至第４のリフトピンにより前記基板を支持する工程と、
前記基板を支持する工程の後、前記第１乃至第４のリフトピンを前記載置台に収納して前記基板を前記載置領域に載置する工程と、を実行し、
前記基板を前記載置領域に載置する工程は、
少なくとも、最初に前記基板の長辺中央部が前記載置面に載置され、次に前記基板の面中央部が前記載置面に載置され、次に前記基板の短辺中央部が前記載置面に載置される、
基板載置機構。 A mounting surface on which a flexible rectangular substrate is mounted, a mounting table having a lift pin provided so as to be retractable from the previously described mounting surface, and a mounting table.
The drive unit that drives the lift pin and
A control unit that controls the drive unit is provided.
The above-mentioned mounting surface has a mounting area corresponding to the substrate and has a mounting area.
The lift pin is described above with a first lift pin provided so as to be retractable at a corner portion of the previously described placement region and a second lift pin provided so as to be retractable at the center of the short side of the previously described placement region. It has a third lift pin provided so as to be retractable in the central portion of the long side of the placement region, and a fourth lift pin provided so as to be retractable in the central portion of the surface of the above-mentioned placement region.
The control unit controls the drive unit to control the drive unit.
At least, a step of supporting the substrate by the first to fourth lift pins in a state where the fourth lift pin is higher than the third lift pin and the second lift pin is higher than the fourth lift pin. When,
After the step of supporting the substrate, the steps of accommodating the first to fourth lift pins in the previously described stand and placing the substrate in the previously described mounting area are executed.
The step of placing the substrate in the previously described placement area is
At least, the central portion of the long side of the substrate is first mounted on the front-described mounting surface, then the central portion of the surface of the substrate is mounted on the front-described mounting surface, and then the central portion of the short side of the substrate is placed in front. Placed on the written surface,
Board mounting mechanism.
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