TW201732997A - Substrate holding device, drawing device, photomask inspection device, and method of manufacturing a photomask - Google Patents
Substrate holding device, drawing device, photomask inspection device, and method of manufacturing a photomask Download PDFInfo
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- TW201732997A TW201732997A TW105141184A TW105141184A TW201732997A TW 201732997 A TW201732997 A TW 201732997A TW 105141184 A TW105141184 A TW 105141184A TW 105141184 A TW105141184 A TW 105141184A TW 201732997 A TW201732997 A TW 201732997A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明係用以製造電子元件之光罩,尤其係關於保持平板顯示器(FPD)製造用之光罩基板之基板保持裝置、描繪裝置、光罩檢查裝置、及光罩之製造方法。The present invention relates to a photomask for manufacturing an electronic component, and more particularly to a substrate holding device, a drawing device, a mask inspection device, and a photomask manufacturing method for holding a photomask substrate for manufacturing a flat panel display (FPD).
作為先前技術,例如,於專利文獻1中記載有一種光罩之製造方法,其係推算描繪步驟中之膜面側之形狀與對光罩進行曝光時之膜面側之形狀之形狀變化量,並基於推算出之形狀變化量,修正特定之轉印圖案之設計描繪資料。又,於專利文獻2中記載有一種基板保持裝置,其可利用鼓風來減少由基板之自身重量所引起之變形、撓曲,又,可適當地進行基板之安裝、卸除。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2010-134433號公報 [專利文獻2]日本專利特開2005-101226號公報As a prior art, for example, Patent Document 1 describes a method of manufacturing a mask which estimates the shape of the film surface side in the drawing step and the shape change amount of the shape of the film surface side when the mask is exposed. Based on the calculated shape change amount, the design drawing data of the specific transfer pattern is corrected. Further, Patent Document 2 describes a substrate holding device that can reduce deformation and deflection caused by the weight of the substrate by blasting, and can appropriately mount and remove the substrate. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-134433 (Patent Document 2) Japanese Patent Laid-Open Publication No. 2005-101226
[發明所欲解決之問題] 於以液晶顯示裝置或有機EL(Electroluminescence,電致發光)顯示裝置等為代表之平面型之顯示裝置(平板顯示器)之製造時,較多利用具備基於欲獲得之元件之設計之轉印用圖案的光罩。作為元件,對搭載於智慧型手機或平板終端等之顯示裝置,不僅要求明亮且省電、動作速度快,而且要求高解像度、廣視角等較高之畫質。因此,有對使用於上述用途之光罩所具有之圖案產生高密度化、高積體化之要求之動向,強烈要求所利用之光罩之圖案以先前不存在之程度微細化。 且說,包含顯示裝置之諸多電子元件係藉由形成有微細圖案之複數個層(Layer)之積層而立體地形成。因此,該等複數個層中之座標精度之提高、及相互之座標之整合變得重要。即,若各層之圖案座標精度不全部滿足特定之級別,則產生於已完成之元件中無法確保恰當之動作等不良情況。因此,處於各層所要求之座標偏移之容許範圍日益變小之方向。所謂座標精度,係指評價形成於基板上之轉印用圖案之任意部位自設計上所規定之座標位置產生何種程度之偏移之指標。座標精度係偏移量越小則成為越高之評價。 光罩係於包含透明材料之基板之主表面上形成轉印用圖案而製造。具體而言,首先,準備光罩基底,該光罩基底係於平滑且平坦地加工之透明材料基板上成膜具有所期望之光學性能之光學膜,進而,塗佈形成光阻等感光材料膜而成。其次,對該光罩基底,使用描繪裝置,描繪設計圖案。然後,將藉由顯影而獲得之抗蝕圖案作為蝕刻遮罩,對光學膜進行蝕刻加工,而獲得所期望之轉印用圖案。然後,亦可視需要反覆成膜、抗蝕圖案形成、蝕刻而形成複雜之轉印用圖案。藉由將該轉印用圖案轉印至作為被轉印體之顯示面板基板等而製造顯示裝置。 然而,於被轉印體上確保特定之座標精度並不容易。其一個原因在於,於光罩基底描繪圖案之描繪步驟中之膜面之形狀與使用具有所獲得之轉印用圖案之光罩之曝光步驟中之膜面之形狀未必一致。因此,經描繪之圖案之座標精度有時於轉印時劣化。 例如,於對光罩基底使用描繪裝置描繪圖案時,於描繪裝置之載台上,以膜面朝上之狀態載置光罩基底。此時,於載台之平坦度(flatness)並不充分之情形或者與載台相對之光罩基底之背面之平坦度並不充分之情形時,其凹凸會影響光罩基底之表面形狀,而於該狀態下進行描繪。具體而言,例如,於如圖8(a)所示光罩用之基板(以下,亦簡稱為「基板」)51之正面52成為膜面且其相反側之背面53之平坦度並不充分的情形時,如圖8(b)所示,於將作為膜面之正面52朝上而將基板51載置於載台61上時,基板51之背面53因重力而仿照載台61之平面62,基板51之正面52之形狀受背面53之凹凸之影響而變化。又,即便載台61之平面62為無凹凸之理想之平面,且使用背面53之平坦度非常高之高精度之基板51,若於載台61之平面62與基板51之背面53之間產生異物63之夾入,則因其影響而導致基板51之膜面形狀(正面形狀)產生變化。 另一方面,於藉由圖案化等形成轉印用圖案並將成為完成品之光罩設置於曝光裝置時,於描繪時向上之膜面變得向下,而不與上述載台接觸,故而成為上述膜面形狀之變化消失之狀態。因此,於描繪時與曝光時膜面形狀不同,因其影響而導致曝光時之座標精度劣化。 專利文獻1中所記載之技術係藉由描繪資料之修正而解決描繪時與曝光時之膜面形狀之差異者。即,為了抵消源於描繪時與曝光時之膜面形狀之差異之座標偏移,而預先對描繪資料或描繪時應用之座標實施修正,藉此防止曝光時之座標精度劣化。然而,亦考慮如下方法係用以較高地維持光罩之座標精度之更根本之方法,該方法係於描繪裝置內抑制基板之膜面所受之變形因素本身,設為接近理想平面之狀態,藉此,減小或者消除上述描繪資料之修正之必要性。 專利文獻2中所記載之基板保持裝置係於載台之上表面具備凸部及用以對基板之下表面吹送氣體之噴出孔,該凸部具有載置基板之載置面及吸附並保持基板之保持器件,藉由自下方對基板吹送氣體而減少因自身重量引起之基板之撓曲。但是,於該基板保持裝置,存在因凸部與基板之間之異物之夾入或基板之吸附而導致產生基板之變形的風險。 因此,本發明係為了解決上述問題,而欲提供一種可提高形成於被轉印體上之圖案之座標精度之適合於光罩基板的基板保持裝置、描繪裝置、光罩檢查裝置、及光罩之製造方法。 [解決問題之技術手段] (第1態樣) 本發明之第1態樣係一種基板保持裝置,其特徵在於:其係將顯示裝置製造用之光罩基板水平地保持者,且具備: 載台,其包含低膨脹材料;及 複數個支持件,其等設置於上述載台上;且 上述支持件於前端具備具有凸曲面之接觸部,上述接觸部係實質上點接觸或線接觸於上述光罩基板之下表面側主表面,藉此將上述光罩基板水平地保持。 (第2態樣) 本發明之第2態樣係如上述第1態樣之基板保持裝置,其特徵在於: 上述支持件於前端具備具有球面之接觸部,上述接觸部係實質上點接觸於上述光罩基板之下表面側主表面。 (第3態樣) 本發明之第3態樣係如上述第1或第2態樣之基板保持裝置,其特徵在於: 具備上浮機構,該上浮機構用以將上述載台以非接觸狀態水平地保持於基台上。 (第4態樣) 本發明之第4態樣係如上述第1~第3態樣中任一態樣之基板保持裝置,其特徵在於: 上述複數個支持件係以相互之距離成為150 mm以下之方式排列於上述載台上。 (第5態樣) 本發明之第5態樣係如上述第1~第4態樣中任一態樣之基板保持裝置,其特徵在於: 上述複數個支持件分別具有高度調整機構。 (第6態樣) 本發明之第6態樣係如上述第5態樣之基板保持裝置,其中 上述高度調整機構係利用氣體之壓力者。 (第7態樣) 本發明之第7態樣係如上述第5態樣之基板保持裝置,其中 上述高度調整機構係利用基於磁力之斥力者。 (第8態樣) 本發明之第8態樣係如上述第5態樣之基板保持裝置,其特徵在於: 上述高度調整機構具備驅動裝置,該驅動裝置根據高度調整量而調整上述接觸部之高度位置。 (第9態樣) 本發明之第9態樣係一種描繪裝置, 其包含如上述第1~第8態樣中任一態樣之基板保持裝置。 (第10態樣) 本發明之第10態樣係一種光罩檢查裝置, 其包含如上述第1~第8態樣中任一態樣之基板保持裝置。 (第11態樣) 本發明之第11態樣係一種光罩之製造方法,其包含如下步驟: 準備於包含透明材料之光罩基板之主表面形成光學膜與光阻膜而成之光罩基底; 藉由如上述第1~第7態樣中任一態樣之基板保持裝置而保持上述光罩基底;及 對上述所保持之光罩基底進行基於圖案資料之描繪,而將上述光學膜圖案化。 (第12態樣) 本發明之第12態樣係一種光罩之製造方法,其包含如下步驟: 準備於包含透明材料之光罩基板之主表面形成光學膜與光阻膜而成之光罩基底; 對上述光罩基底進行基於圖案資料之描繪,將上述光學膜圖案化,而形成具有轉印用圖案之光罩;及 檢查上述轉印用圖案;且 於上述檢查步驟中,包含如下步驟,即,藉由如上述第1~第7態樣中任一態樣之基板保持裝置保持上述光罩,檢查座標精度。 (第13態樣) 本發明之第13態樣係一種光罩之製造方法,其具有如下步驟: 準備於包含透明材料之光罩基板之主表面形成光學膜與光阻膜而成之光罩基底; 保持步驟,其係藉由基板保持裝置將上述光罩基底以上述主表面為上側之方式保持;及 描繪步驟,其係對上述所保持之光罩基底進行基於圖案資料之描繪;且 上述基板保持裝置具有:載台,其載置上述光罩基板;及複數個支持件,其等設置於上述載台上,且分別具備高度調整機構;且 於上述保持步驟中,包含如下步驟,即,測定上述主表面之高度分佈,獲得高度分佈資料,並且基於上述高度分佈資料,使上述高度調整機構驅動,而調整上述光罩基底之上述主表面之形狀。 [發明之效果] 根據本發明,能夠抑制因保持光罩基板之載台上之異物之夾入所引起的光罩膜面形狀之變化,而將光罩所具有之轉印用圖案以優異之座標精度轉印至被轉印體上。[Problems to be Solved by the Invention] In the manufacture of a flat type display device (flat panel display) typified by a liquid crystal display device or an organic EL (Electroluminescence) display device, etc. A mask for the transfer pattern of the component design. As a component, a display device mounted on a smart phone or a tablet terminal is required to be bright, power-saving, and fast in operation speed, and requires high image quality such as high resolution and wide viewing angle. Therefore, there is a demand for a high density and a high integration of the pattern of the photomask used for the above-described use, and it is strongly required that the pattern of the photomask to be used is made finer than previously. Further, a plurality of electronic components including a display device are three-dimensionally formed by a laminate of a plurality of layers in which a fine pattern is formed. Therefore, the improvement of the coordinates of the plurality of layers and the integration of the coordinates of each other become important. In other words, if the pattern coordinate accuracy of each layer does not satisfy a certain level, it may cause a problem that an appropriate operation cannot be ensured in the completed component. Therefore, the tolerance range of the coordinate offset required for each layer is becoming smaller and smaller. The coordinate accuracy refers to an index for evaluating how much the position of the transfer pattern formed on the substrate is shifted from the coordinate position specified by the design. The coordinates accuracy is the evaluation as the offset is smaller. The photomask is produced by forming a transfer pattern on the main surface of the substrate including the transparent material. Specifically, first, a reticle substrate is prepared, which is formed on a smooth and flat processed transparent material substrate to form an optical film having desired optical properties, and further, is coated with a photosensitive material film such as a photoresist. Made. Next, a design pattern is drawn using the drawing device on the mask base. Then, the resist pattern obtained by development is used as an etching mask, and the optical film is etched to obtain a desired transfer pattern. Then, it is also possible to form a complicated transfer pattern by repeating film formation, resist pattern formation, and etching as needed. The display device is manufactured by transferring the transfer pattern to a display panel substrate or the like as a transfer target. However, it is not easy to ensure a certain coordinate accuracy on the transferred body. One of the reasons is that the shape of the film surface in the drawing step of the reticle base drawing pattern does not necessarily coincide with the shape of the film surface in the exposure step using the reticle having the obtained transfer pattern. Therefore, the coordinate accuracy of the drawn pattern sometimes deteriorates at the time of transfer. For example, when the pattern is drawn using the drawing device on the mask base, the mask base is placed on the stage of the drawing device with the film surface facing upward. At this time, when the flatness of the stage is insufficient or the flatness of the back surface of the reticle base opposite to the stage is insufficient, the unevenness affects the surface shape of the reticle base, and Drawing is performed in this state. Specifically, for example, the front surface 52 of the substrate for a mask (hereinafter, simply referred to as "substrate") 51 as shown in FIG. 8(a) is a film surface, and the flatness of the back surface 53 on the opposite side is insufficient. In the case where the substrate 51 is placed on the stage 61 with the front surface 52 as the film surface facing upward as shown in FIG. 8(b), the back surface 53 of the substrate 51 is patterned by the gravity of the stage 61. 62. The shape of the front surface 52 of the substrate 51 is affected by the unevenness of the back surface 53. Further, even if the plane 62 of the stage 61 is a flat surface having no unevenness, and the substrate 51 having a high degree of flatness with a very high flatness of the back surface 53 is used, it is generated between the plane 62 of the stage 61 and the back surface 53 of the substrate 51. When the foreign matter 63 is sandwiched, the film surface shape (front surface shape) of the substrate 51 changes due to the influence thereof. On the other hand, when the transfer pattern is formed by patterning or the like and the photomask which is a finished product is placed on the exposure apparatus, the upward film surface becomes downward at the time of drawing, and is not in contact with the stage. The state in which the change in the shape of the above-mentioned film surface disappears. Therefore, the shape of the film is different between the drawing and the exposure, and the coordinate accuracy at the time of exposure is deteriorated due to the influence. The technique described in Patent Document 1 solves the difference between the shape of the film surface at the time of drawing and the time of exposure by the correction of the drawing data. In other words, in order to cancel the coordinate offset originating from the difference in the shape of the film surface at the time of drawing and the time of exposure, the coordinates to be applied at the time of drawing or drawing are corrected in advance, thereby preventing the coordinate accuracy at the time of exposure from deteriorating. However, the following method is also considered to be a more fundamental method for maintaining the coordinate accuracy of the reticle higher. The method is for suppressing the deformation factor itself of the film surface of the substrate in the drawing device, and is set to be close to the ideal plane. Thereby, the necessity of correcting the above-described depiction data is reduced or eliminated. The substrate holding device described in Patent Document 2 is provided with a convex portion on the upper surface of the stage and a discharge hole for blowing a gas to the lower surface of the substrate, the convex portion having a mounting surface on which the substrate is placed, and a substrate for adsorbing and holding the substrate The holding device reduces the deflection of the substrate due to its own weight by blowing gas from the substrate from below. However, in the substrate holding device, there is a risk that deformation of the substrate occurs due to pinching of foreign matter between the convex portion and the substrate or adsorption of the substrate. Therefore, the present invention has been made to solve the above problems, and it is desirable to provide a substrate holding device, a drawing device, a mask inspection device, and a mask that are suitable for a mask substrate, which can improve the coordinate accuracy of a pattern formed on a transfer target. Manufacturing method. [Means for Solving the Problem] (First Aspect) A substrate holding device according to a first aspect of the present invention is characterized in that: the photomask substrate for manufacturing a display device is horizontally held, and includes: a table comprising a low expansion material; and a plurality of support members disposed on the stage; wherein the support member has a contact portion having a convex curved surface at the front end, and the contact portion is substantially in point contact or line contact with the above The lower surface side main surface of the photomask substrate, whereby the above-described photomask substrate is horizontally held. According to a second aspect of the invention, in the substrate holding device according to the first aspect of the invention, the support member includes a spherical contact portion at a distal end, and the contact portion is substantially in point contact with The lower surface main surface of the mask substrate. (Third Aspect) The substrate holding device according to the first or second aspect of the present invention is characterized by comprising: a floating mechanism for leveling the stage in a non-contact state The ground is kept on the abutment. (4th aspect) The substrate holding device according to any one of the first to third aspects of the present invention, characterized in that the plurality of support members are 150 mm apart from each other. The following methods are arranged on the above stage. (Fifth Aspect) The substrate holding device according to any one of the first to fourth aspects of the present invention, characterized in that the plurality of support members each have a height adjustment mechanism. (6th aspect) The sixth aspect of the invention is the substrate holding device according to the fifth aspect, wherein the height adjusting mechanism uses a pressure of a gas. (Seventh Aspect) The seventh aspect of the invention is the substrate holding device according to the fifth aspect, wherein the height adjusting mechanism uses a repulsive force based on a magnetic force. According to a ninth aspect of the present invention, in the substrate holding device of the fifth aspect, the height adjusting mechanism includes a driving device that adjusts the contact portion according to a height adjustment amount. Height position. (9th aspect) A ninth aspect of the invention is a drawing device comprising the substrate holding device according to any one of the first to eighth aspects described above. (10th aspect) A ninth aspect of the invention is a reticle inspection apparatus comprising the substrate holding device according to any one of the first to eighth aspects described above. (11th aspect) The eleventh aspect of the invention is a method of manufacturing a photomask, comprising the steps of: preparing a photomask formed by forming an optical film and a photoresist film on a main surface of a photomask substrate comprising a transparent material; a substrate holding device according to any one of the first to seventh aspects described above, wherein the photomask substrate is held; and the photomask substrate is imaged based on pattern data, and the optical film is formed Patterned. (12th aspect) A twelfth aspect of the invention is a method of manufacturing a photomask comprising the steps of: preparing a photomask formed by forming an optical film and a photoresist film on a main surface of a photomask substrate comprising a transparent material; Forming the mask base based on pattern data, patterning the optical film to form a mask having a transfer pattern; and inspecting the transfer pattern; and performing the following steps in the inspection step In other words, the reticle is held by the substrate holding device according to any one of the first to seventh aspects described above, and the coordinate accuracy is checked. (13th aspect) A thirteenth aspect of the invention is a method of manufacturing a photomask, comprising the steps of: preparing a photomask formed by forming an optical film and a photoresist film on a main surface of a photomask substrate comprising a transparent material; a substrate holding step of holding the photomask substrate on the upper side of the main surface by a substrate holding device; and a drawing step of drawing the mask substrate based on the pattern data; The substrate holding device includes: a stage on which the photomask substrate is placed; and a plurality of support members provided on the stage and each having a height adjustment mechanism; and the holding step includes the following steps, that is, And measuring a height distribution of the main surface to obtain height distribution data, and driving the height adjustment mechanism to adjust a shape of the main surface of the mask base based on the height distribution data. [Effects of the Invention] According to the present invention, it is possible to suppress a change in the shape of the mask film caused by the sandwiching of the foreign matter on the stage of the mask substrate, and to make the transfer pattern included in the mask an excellent coordinate. The precision is transferred to the transferred body.
一般而言,為了對光罩基底進行描繪等,而使用將基板水平地保持之基板保持裝置。該基板保持裝置係具備平坦且平滑地加工之載台作為用以載置基板之載台。而且,於實際保持基板之情形時,將成為膜面之表面朝上而將基板載置於該載台上。 於本說明書中,所謂膜面,係指基板以正面及背面之關係所具有之2個主表面中如下之面。即,若為圖案形成前之包含透明材料之基板,則係指要形成圖案之預定之面,若為形成有特定之光學膜或抗蝕劑膜之光罩基底,則係指形成有該等膜之面,若為形成有轉印用圖案之光罩、或作為其半製品之光罩中間體,則係指形成有轉印用圖案之面。又,將符合膜面之主表面設為正面,將與膜面為相反側之主表面設為背面。 此處,基板保持裝置之載台之表面潔淨且為理想平面,若載置於此之基板之正面(膜面)及背面亦為理想平面,則不會產生座標精度劣化之問題。然而,即便於準備光罩用之基板之階段對兩主表面實施精密之研磨,於例如背面之平坦度並不充分之情形或者於載台與基板之間存在異物之夾入之情形時,亦會受該等之影響而導致載置於載台之基板之膜面形狀產生變化(參照圖8)。 因此,於如上述般膜面形狀產生變化之狀態下對基板之膜面側實施基於特定之圖案資料之描繪的情形時,於將藉此形成之轉印用圖案藉由曝光裝置轉印至被轉印體時,即,於在因背面側之凹凸或異物引起之上述膜面形狀之變化消失之狀態下轉印時,座標精度喪失,而產生變形。當然,座標精度之劣化可藉由使用高精度地研磨之基板而某種程度地減輕。例如,若使用以不僅基板之膜面側而且背面側之平坦度亦較高之規格加工之高精度之基板,則可抑制描繪時之膜面形狀之變化。但是,無法完全排除基板保持裝置之載台上偶發性地發生之異物之存在。 因此,於本實施形態中,為了進一步抑制因此種異物之存在所引起之座標精度之劣化,而構成為使基板背面與載台之接觸為實質上點接觸或線接觸,而減少夾入異物之概率。 具體而言,本實施形態之基板保持裝置係將顯示裝置製造用之光罩基板水平地保持者,且具備:載台,其包含低膨脹材料;及複數個支持件,其等設置於該載台上。又,各支持件成為如下構成,即,於前端具備具有凸曲面之接觸部,且該接觸部係實質上點接觸或線接觸於光罩基板之下表面側主表面,藉此將光罩基板水平地保持。 於本說明書中,成為保持對象之光罩基板(以下,亦稱為「遮罩基板」,或者亦簡稱為「基板」)可為包含透明材料之基板,亦可為於該基板之任一主表面成膜適合於欲獲得之轉印用圖案之所期望之光學膜(包含將曝光之光遮光之遮光膜、使曝光之光部分透過之半透光膜、使曝光之光部分透過並且使光之相位偏移之相位偏移膜、防止包含曝光之光的光之反射之抗反射膜等)或功能膜(蝕刻擋止膜、導電性調整膜等)而成之光罩基底,還可為形成有光阻等抗蝕劑膜之帶抗蝕劑之光罩基底,亦可為局部地或者完整地形成有轉印用圖案之光罩中間體或光罩。 <第1實施形態> 圖1係用以說明本發明之第1實施形態之基板保持裝置之構成的圖,(a)係表示保持前之光罩基板之狀態之側視圖,(b)係表示藉由基板保持裝置保持有光罩基板之狀態之側視圖。 (光罩基板) 圖1(a)所示之光罩基板1係將作為一主表面之正面2設為膜面且於此處成膜有遮光膜等之光罩基底。光罩基板1係形成為俯視四邊形(正方形或長方形)。又,此處例示之光罩基板1於在未受因自身重量所引起之撓曲之狀態下進行平坦度測定時,具有圖1(a)所示之形狀。圖示之光罩基板1係以正面2之平坦度變高之方式高精度地研磨之基板,但於背面3存在若干個凹凸。 作為不受因自身重量所引起之撓曲之影響地進行平坦度測定之方法,例如,存在如下方法:鉛垂地保持基板之主表面(正面及背面),於該狀態下分別藉由平坦度測定裝置等測定基板之正面及背面之平坦度。只要將藉由該方法而獲得之測定結果設為正面平坦度資料、背面平坦度資料,並進行映射化等,即可掌握基板之正面及背面之形狀。 (基板保持裝置) 圖1(b)所示之基板保持裝置10係將光罩基板1水平地保持者。基板保持裝置10具備載台11。載台11由加工為板狀之材料構成,較理想為包含低膨脹材料。低膨脹材料係因溫度變化所引起之體積變化較小之材料。例如,為陶瓷等,可較佳地使用常溫附近之熱膨脹係數極低之材料。較佳為可將熱膨脹係數為攝氏0~50度、0.1×10-6 /K以下之材料用作載台11之構成材料。再者,於本說明書中,規定數值範圍之「○○~△△」之表述係指「○○以上且△△以下」。 載台11係與光罩基板1同樣地形成為俯視四邊形(正方形或長方形)。於載台11上設置有複數個支持件12。各支持件12係呈柱狀之銷構造之支持件(以下,亦稱為「支持銷」),且以自載台11之表面(上表面)向上側突出之狀態設置。各支持銷固定於載台11上,支持銷之高度固定(將此稱為高度固定型)。此處,支持銷設定為固定之高度。 於各支持件(支持銷)12之前端,形成有上側成為凸曲面之接觸部14。接觸部14成為當藉由基板保持裝置10保持光罩基板1時接觸於光罩基板1之背面(下表面)3的部分。接觸部14由硬質之材料構成。該接觸部14例如成為藉由將形成為球形狀(球面形狀)之接觸部14安裝於支持銷之前端而相對於光罩基板1之背面3實質上點接觸的部分。 實際上,於使基板之背面3朝下而將光罩基板1載置於載台11上之狀態下,基板之成為下側主表面之背面3實質上點接觸地支承於複數個支持件12之前端,於該狀態下光罩基板1被水平地保持。再者,具有凸曲面之接觸部與基板背面之接觸原理上為點接觸,於接觸部受基板重量而稍微變形之情形時,該接觸亦實質上為點接觸,而獲得本發明之作用效果,故而本發明包含該狀態。關於下述之線接觸亦同樣。 此時,複數個支持件(支持銷)12經由接觸部14自光罩基板1之背面3側支撐基板之重量,藉此光罩基板1被水平地保持。又,於在載台11上配置至少4個支持件12之情形時,光罩基板1係以至少4點之點接觸支持背面3側,並且支承其重量。 作為接觸部14之素材,可較佳地使用例如紅寶石或藍寶石等硬質材料。但是,除此以外,亦可使用硬度相對較高之金屬構成接觸部14。例如,較佳地使用維氏硬度為800 kgw/mm2 以上之素材。若利用硬度較低之材料構成接觸部14,則因磨損而導致無法維持點接觸,從而必須屢次更換。相對於此,若利用硬度較高之材料構成接觸部14,則可抑制接觸部14之磨損,故而可長期維持點接觸之狀態。 又,本實施形態之基板保持裝置10如圖2(a)所示,於載台11下具備基台15。基台15係與載台11同樣地形成為俯視四邊形(正方形或長方形)。載台11為水平地載置於基台15上之構成,更佳為可設為具有以非接觸狀態水平地保持於基台15上之功能之構成。具體而言,例如,可設為具備如下構成者:具備藉由氣體之壓力等使載台11上浮之上浮機構,且藉由該上浮機構將載台11以非接觸狀態水平地保持於基台15上。於該情形時,載台11較佳為設為於在基台15上維持水平姿勢之狀態下藉由氣體之壓力(例如,空氣壓力)而上浮的構成。藉此,例如,於描繪裝置中,必須使保持光罩基板1之載台11水平地移動之情形時,可如圖中之箭頭所示使載台11自基台15上浮至特定高度而於該狀態下使載台11水平地移動。 支持件12係如圖2(b)所示,於前端具備具有凸曲面(於本實施形態中為球面)之接觸部14。支持件12較佳為以固定之間距有規則地排列於載台11上。於該情形時,較理想為,複數個支持件12係以相互之間隔成為150 mm以下、更佳為60~150 mm,進而較佳為60~130 mm之方式排列於載台11上。於圖2(a)中,作為一例,將複數個支持件12呈格子狀地排列於載台11上。於由支持銷構成支持件12之情形時,較佳為以相鄰之支持銷之間隔(中心間距離)如上述般最大成為150 mm以下之方式將支持銷有規則地排列。 又,於由支持銷構成支持件12之情形時,較佳為支持銷於載台11上設置至少4根。於該情形時,相對於由基板保持裝置10保持之光罩基板1,於與載台11對向之背面3之至少4點,分別對應之支持件12之接觸部14接觸。而且,藉由該4點之接觸,光罩基板1之重量由各支持件12支承。 此處,若相對於光罩基板1之大小或重量而配置於載台11上之支持銷之個數過少,則有於支持銷之間基板產生撓曲而對座標精度帶來不良影響之虞。又,若支持銷之配置個數過多,則相應地支持銷與基板之接觸點數增加,故而異物介存於支持銷與基板之間之概率變高。尤其是,顯示裝置製造用之光罩基板例如為主表面之一邊為300 mm以上之正方形或長方形而面積較大,且亦有重量,故而以3點以下之接觸來支持較為困難。因此,於將顯示裝置製造用之光罩基板以基於支持銷之點接觸而支持之情形時,較佳為於較佳為9~350點、更佳為36~300點之接觸點支持。如上所述,各接觸點之高度可設定為相等。或者,亦可使用背面平坦度資料以抵消背面之高度分佈之方式調整各接觸點之高度而進行設定。 於本第1實施形態中,成為如下構成,即,於藉由基板保持裝置10將光罩基板1水平地保持之情形時,設置於載台11上之複數個支持件12分別經由接觸部14與光罩基板1之背面3點接觸。若應用此種構成,則光罩基板1之背面3側不會以面接觸載置於載台11上,且光罩基板1藉由複數個支持件12而保持為自載台11之上表面浮起之狀態,故而不會於載台11上表面與光罩基板1背面之間夾入異物16(圖1)。又,由於將光罩基板1由各支持件12點接觸地支持,故而不易產生於光罩基板1背面與支持件12前端之間夾入異物之情況。因此,若於該狀態下進行對光罩基板1之膜面側之處理(例如,描繪處理),則可抑制因異物16之夾入所引起之膜面形狀之變化。由此,可抑制因膜面形狀之變化所引起之座標精度之劣化。其結果,可將形成於光罩基板1之轉印用圖案以優異之座標精度轉印至被轉印體。 如此,於本第1實施形態中,可藉由抑制因異物16之夾入所引起之光罩基板1之膜面形狀之變化,而抑制因描繪時與曝光時之膜面形狀之差異所引起的座標精度之劣化。藉此,可防止因異物16之夾入而導致光罩基板1變形之風險,而達成提高形成於被轉印體上之圖案之座標精度之所期望之目的。 但是,於在光罩基板1之背面3存在源於其平坦度不足之凹凸之情形時,可進行用以抑制其影響之進一步之設計。即,於因背面3之平坦度不充分而於背面3存在凹凸之情形時,上述凹凸會反映於水平地載置於基板保持裝置10之載台11上之光罩基板1之膜面側。因此,有對在該狀態下進行之對基板膜面之處理(例如,描繪處理)後之座標精度帶來不良影響之虞。因此,本發明者想出可獲得較上述第1實施形態更高之座標精度之基板保持裝置。以下,將具體之態樣作為第2實施形態及第3實施形態而進行說明。 <第2實施形態> 圖3係用以說明本發明之第2實施形態之基板保持裝置之構成的圖,(a)係表示保持前之光罩基板之狀態之側視圖,(b)係表示藉由基板保持裝置保持有光罩基板之狀態之側視圖。 (光罩基板) 圖3(a)所示之光罩基板1與上述第1實施形態同樣地,係將作為一主表面之正面2設為膜面且於此處成膜有遮光膜等之光罩基底。但是,若與上述第1實施形態中所使用之光罩基板1相比,則平坦度之規格亦可平緩。即,此處所例示之光罩基板1係於在未受因自身重量所引起之撓曲之狀態下進行平坦度測定時,正面2之平坦度與第1實施形態同樣地高,但背面3之凹凸較第1實施形態大,而基板之厚度變得不均勻。 (基板保持裝置) 於圖3(b)所示之基板保持裝置10,於包含低膨脹材料之載台11上設置有複數個支持件12。該方面係與上述第1實施形態相同。但是,於上述第1實施形態中,構成各支持件12之支持銷之高度固定,相對於此,於本第2實施形態中,於各支持件12設有高度調整機構20。高度調整機構20係利用氣體之壓力(例如,空氣壓力等)而調整支持件12中之接觸部14之高度位置者。高度調整機構20中,作為調整接觸部14之高度位置之驅動裝置,例如,如圖4所示,具備空氣阻尼器21及可藉由對該空氣阻尼器21之供氣及排氣而於上下方向移動之桿22。於桿22之前端(上端),介隔突體23而安裝有球形狀之接觸部14。球形狀之接觸部14根據所受到之負荷而上下可動地被保持。 再者,此處,作為一例,高度調整機構20係利用氣體之壓力者,但並不限定於此,例如,亦可為利用基於磁力之斥力者。 於包含上述構成之高度調整機構20中,藉由對空氣阻尼器21供給壓縮空氣或者將所供給之壓縮空氣排氣,可使桿22於上下方向移動(升降)。又,於對接觸部14施加負荷之狀況下,可藉由可變控制對空氣阻尼器21供給之壓縮空氣之壓力而調整(變更)接觸部14之高度。又,若於在載台11上未載置光罩基板1之狀態下對高度調整機構20之空氣阻尼器21供給壓縮空氣,則藉由桿22之上升而將接觸部14上推。此時,與壓縮空氣之壓力對應之上推力作用於支持件12之接觸部14。因此,藉由對設置於載台11上之所有支持件12之高度調整機構20分別供給相同壓力之壓縮空氣,可使各支持件12之接觸部14相互藉由相同之上推力而上升。 於使用包含上述構成之基板保持裝置10保持光罩基板1之情形時,將光罩基板1以其正面2朝上且背面3朝下之方式載置於載台11上。如此一來,與上述第1實施形態同樣地,光罩基板1經由接觸部14而點接觸地支承於設置於載台11上之各支持件12上。又,若對各支持件12之高度調整機構20供給壓縮空氣而使接觸部14上升,並於該狀態下載置光罩基板1,則對各支持件12朝下施加因光罩基板1之自身重量所引起之重力。此時,於各支持件12中,於經由桿22作用於接觸部14之上推力與因光罩基板1之自身重量而作用於接觸部14之重力正好平衡之高度位置,接觸部14靜止。因此,於將光罩基板1載置於載台11上之情形時,只要以因光罩基板1之自身重量所引起之重力與高度調整機構20所產生之上推力相互平衡(大致相等)之方式設定對各高度調整機構20供給之壓縮空氣之壓力即可。 於本第2實施形態中,採用對各高度調整機構20以均等之壓力供給壓縮空氣之構成。藉此,即便於因光罩基板1之背面3之平坦度不充分而於背面3存在凹凸之情形時,亦可於維持背面3之凹凸形狀之狀態下藉由各支持件12之接觸部14將光罩基板1水平地支持。其理由如下所述。於光罩基板1之背面3,因凹凸而存在厚度相對較大之部分(單位面積之重量較大之部分)與厚度相對較小之部分(單位面積之重量較小之部分)。於針對此而對各高度調整機構20以均等之壓力供給壓縮空氣之情形時,與上述厚度相對較大之部分點接觸之接觸部14承受更大之重力,故而於相對較低之位置靜止。另一方面,與上述厚度相對較小之部分點接觸之接觸部14承受更小之重力,故而於相對較高之位置靜止。即,因光罩基板1之背面3之凹凸而各接觸部14靜止之高度位置不同。因此,可根據所使用之基板之背面形狀(被動地)調整接觸部14之高度。該方面係於將光罩基板1載置於載台11上之後對各高度調整機構20以均等之壓力供給壓縮空氣之情形時亦同樣。 因此,於本第2實施形態中,即便於光罩基板1之背面3存在凹凸,亦可藉由各接觸部14之高度位置之不同而吸收該凹凸。因此,不會使光罩基板1之背面3之凹凸形狀反映於正面(膜面)2側,且可將光罩基板1水平地保持。又,即便有存在於載台11上之異物16或源於背面3之平坦度不足之凹凸,亦可降低該影響而以較高之級別維持膜面之水平(平坦性)。而且,於對載置於該基板保持裝置10之光罩基板1進行處理(例如,描繪處理)時,可進一步抑制座標精度之劣化。 <第3實施形態> 圖5係用以說明本發明之第3實施形態之基板保持裝置之構成的圖,(a)係表示保持前之光罩基板之狀態之側視圖,(b)係表示不使高度調整機構驅動地藉由基板保持裝置保持有光罩基板之狀態的側視圖,(c)係表示使高度調整機構驅動地藉由基板保持裝置保持有光罩基板之狀態的側視圖。 (光罩基板) 圖5(a)所示之光罩基板1與上述第2實施形態同樣地,係將作為一主表面之正面2設為膜面且於此處成膜有遮光膜等之光罩基底。該光罩基板1係於未受因自身重量所引起之撓曲之狀態下進行平坦度測定時,正面2之平坦度與第1實施形態同樣地高,但背面3之凹凸較第1實施形態大,而基板之厚度變得不均勻。 (基板保持裝置) 於圖5(b)、(c)所示之基板保持裝置10,於包含低膨脹材料之載台11上設置有複數個支持件12,於各支持件(支持銷)12設有高度調整機構20。該方面係與上述第2實施形態相同。但是,於本第3實施形態中,與上述第2實施形態之不同之處在於,複數個支持件(支持銷)12之各者具備可獨立地調整高度之高度調整機構20。即,與複數個支持件12對應之複數個高度調整機構20分別具備根據所指定之高度調整量(主動地)使接觸部14之位置上升的驅動裝置。具體而言,例如,使用上述圖4所示之空氣阻尼器21及桿22構成高度調整機構20之驅動裝置,藉此,若高度調整機構20為利用氣體之壓力(此處設為空氣壓力)調整接觸部14之高度者,則構成為可對各高度調整機構20中之每一個個別地控制向空氣阻尼器21供給之壓縮空氣之壓力。藉此,於將光罩基板1水平地保持時,可分別獨立地調整複數個支持件12中之接觸部14之高度。又,可於各支持件12中之每一個分別根據所指定之高度調整量以所期望之上推力使接觸部14之位置上升。 此處,考慮如下狀況,即,如圖5(b)所示,於不使高度調整機構20驅動地藉由基板保持裝置10保持有光罩基板1時,於某部分中,於支持件12之接觸部14與光罩基板1之背面3之間夾入有異物16。於該狀況下,存在如下風險:因圖5(a)所示之光罩基板1之背面3之凹凸與圖5(b)所示之異物16之夾入而導致背面3側之凹凸或異物16之夾入反映於光罩基板1之正面2側,而膜面之平坦度變得不充分。 因此,於本第3實施形態中,於驅動各高度調整機構20之前,於圖5(b)所示之狀態下,測定因光罩基板1之正面(膜面)2側出現之凹凸所致之高度分佈。高度分佈之測定方法例如可藉由高度測定器件而進行,該高度測定器件藉由空氣緩衝等與光罩基板1之相當於膜面側主表面之正面2隔開固定之距離而配置。高度測定器件具備根據因光罩基板1之正面2之形狀(凹凸)所引起之高度之變化而高度上下的機構,藉由該機構,可測定光罩基板1之正面2之高度之變化。 但是,作為測定光罩基板1之正面2之高度分佈之方法,除了上述方法以外,亦可使用利用用以將與高度測定器件相同之構件維持於固定位置之氣體流量來測定的方法、或測定間隙間之靜電電容之方法、或者基於利用雷射之脈衝計數、光學聚焦之方法等,並不特別限定於任一方法。 作為高度測定之測定點,較佳為採用以固定之間距有規則地排列之測定點。例如,可將間距10 mm之格子點設為測定點。藉由該測定,可獲得反映出如圖5(b)所示般利用基板保持裝置10保持光罩基板1時因背面3之凹凸或異物16之夾入而出現於正面2側之凹凸的高度分佈圖。 其次,使用上述高度分佈圖,決定各支持件12之高度調整量,以使基板膜面之高度之偏差消失。然後,根據該高度調整量,驅動各支持件12之高度調整機構20。於驅動時,例如於高度調整機構20使用空氣阻尼器21(圖4)之情形時,預先求出流入至空氣阻尼器21之空氣之流量與接觸部14之上升尺寸之關聯。又,於採用利用基於磁力之斥力之高度調整機構之情形時,預先求出流通至電磁鐵(未圖示)之電流量與接觸部14之上升尺寸之關聯。然後,根據高度分佈圖決定高度調整量之後,為了根據該高度調整量使接觸部14之位置上升,而控制流入至空氣阻尼器21之空氣之流量或流通至電磁鐵之電流量。但是,除此以外,例如,亦可使用偵測桿22之上升量之感測器來檢測藉由高度調整機構20之驅動而向上方移動之接觸部14之位置(高度),基於該檢測結果而控制流入至空氣阻尼器21空氣之流量或流通至電磁鐵之電流量。 於使用包含上述構成之基板保持裝置10保持光罩基板1之情形時,於載置有光罩之狀態下,測定光罩基板1之作為膜面之正面2之高度分佈,並根據基於該測定結果所決定之高度調整量,而驅動各支持件12之高度調整機構20。即,於高度分佈之測定結果中,於相當於因背面形狀之影響而向上側突出之正面2部分之部位中,以使接觸部14相對地變低之方式驅動高度調整機構20,於相當於向下側凹陷之正面2部分之部位中,以使接觸部14相對地變高之方式驅動高度調整機構20。藉此,不會使光罩基板1之背面3側之凹凸或異物16之夾入等反映於正面2側,且可將正面2維持為平坦之狀態而於該狀態下將光罩基板1水平地保持。 且說,作為於將光罩基板1載置於基板保持裝置10時對光罩基板1之膜面即正面2側之高度分佈造成影響的因素,除了上述背面3側之凹凸或異物16之夾入以外,例如,若於光罩基板1之膜面側存在若干凹凸,則亦包含該因素。但是,光罩基板1之膜面側之凹凸係於自基板保持裝置10內(例如描繪時)卸除光罩基板1並將其設置於其他裝置內時(例如曝光時)亦不會消失而殘存。因此,於將源於描繪時與曝光時之膜面形狀之變化之座標精度之劣化視為問題之情形時,將因膜面側之凹凸所引起之量除外而考慮。 具體而言,於在光罩基板1之膜面側存在若干凹凸並欲抑制因其所致之對座標精度之影響的情形時,採用如下態樣即可。即,藉由平坦度測定而預先掌握光罩基板1之膜面即正面2之平坦度分佈資料(上述正面平坦度資料)。然後,利用預先掌握之正面平坦度資料來修正於上述圖5(b)所示之狀態下進行之高度分佈之測定結果。具體而言,自高度分佈之測定結果減去正面平坦度資料。然後,僅使相當於藉此獲得之差量之量反映至各支持件12之高度調整機構。藉此,可抑制膜面側之凹凸之影響。 再者,光罩基板1之膜面側所具有之平坦度分佈之資料(正面平坦度資料)如上文所言及般,可藉由在光罩基板1未產生因自身重量所引起之撓曲之影響之狀態下(例如於鉛垂地保持光罩基板1之主表面之狀態下)利用平坦度測定裝置測定光罩基板1之膜面即正面2之平坦度而獲得。 進而,可代替自高度分佈之測定結果減去正面平坦度資料,而使用上述背面平坦度資料獲得近似之結果。即,使用利用背面平坦度資料所得之平坦度之映射圖,決定各支持件12之高度調整量。然後,可根據該高度調整量而驅動各支持件12之高度調整機構20。 <應用例> 本發明並不限定於基板保持裝置,亦可作為其他裝置或者方法而實現。以下,敍述具體之應用例。 (描繪裝置) 本發明亦可作為包含上述基板保持裝置10之描繪裝置而實現。即,於描繪時,應用上述基板保持裝置10作為保持光罩基板1之保持裝置。於該情形時,描繪裝置具備:基板保持裝置10,其將光罩基板1水平地保持;及描繪器件,其對由基板保持裝置10保持之光罩基板1之光阻膜進行描繪。描繪器件既可使用雷射,亦可使用電子束。 於實際之描繪步驟中,由於將作為光罩基底之光罩基板1之正面(膜面)2設為上側而將光罩基板1載置於載台11,故而有膜面側之平坦度根據背面3側之平坦度或者基板厚度尺寸(TTV;total thickness variation,總厚度變化)之規格而變差之虞。於此種情形時,若使用上述基板保持裝置10構成描繪裝置,則可防止因背面形狀所引起之膜面側之平坦度變差。因此,可抑制描繪時之座標精度於轉印時劣化。該情況於微細化、高積體化之傾向較強之顯示裝置製造用之光罩之製造中存在較大之意義。 (光罩檢查裝置) 又,本發明亦可作為包含上述基板保持裝置10之光罩檢查裝置而實現。即,亦可於光罩檢查裝置應用上述基板保持裝置10,該光罩檢查裝置於在光罩基板1上形成轉印用圖案之後,檢查該轉印用圖案是否滿足特定之基準。作為光罩檢查裝置,可例示遮罩座標檢查裝置等。 (光罩之製造方法) 又,本發明亦可作為使用上述基板保持裝置10之光罩之製造方法而實現。於該情形時,於光罩之製造步驟中,例如採用以下步驟。 (準備步驟) 首先,準備光罩基底。具體而言,於包含透明材料之光罩基板之主表面成膜至少一個光學膜等。光學膜包含(a)將曝光之光遮光之遮光膜、(b)使曝光之光之一部分透過之半透光膜、(c)使曝光之光之一部分透過並且使光之相位偏移之相位偏移膜、(d)防止曝光之光之反射之抗反射膜等。進而,於光罩基板之主表面以覆蓋上述光學膜之方式形成光阻膜。藉此,獲得於包含透明材料之光罩基板之主表面形成有光學膜與光阻膜之光罩基底。 (保持步驟) 繼而,藉由上述基板保持裝置10保持準備步驟中準備之光罩基底。此時,將形成有上述光學膜等之膜面朝向上側而將光罩基底載置於載台11上,藉此,利用複數個支持件12將光罩基底水平地保持。 (描繪及顯影步驟) 繼而,對保持步驟中保持之光罩基底進行基於圖案資料之描繪。具體而言,使用雷射描繪機等對光阻膜進行描繪。此時,根據基於所期望之轉印用圖案之設計製成之遮罩資料對光阻膜進行雷射描繪。然後,進行光阻膜之顯影。藉此,將光阻膜之多餘部分去除,而形成抗蝕圖案。 (圖案化步驟) 繼而,進行光學膜之圖案化。具體而言,將上述抗蝕圖案作為蝕刻遮罩,對光學膜進行蝕刻,藉此形成光學膜之圖案。於該步驟中,將光學膜圖案化,而形成具有轉印用圖案之光罩。 再者,於圖案化步驟中,光學膜之蝕刻既可採用濕式蝕刻,亦可採用乾式蝕刻。一般而言,顯示裝置製造用之光罩基板為大型之基板,且其形狀或尺寸亦多樣。因此,光學膜之蝕刻較佳為應用濕式蝕刻。 (抗蝕劑去除步驟) 繼而,將上述抗蝕圖案去除。具體而言,藉由抗蝕劑剝離而將抗蝕圖案去除之後,洗淨光罩。 (檢查步驟) 繼而,檢查上述轉印用圖案。於該檢查步驟中,藉由上述基板保持裝置10保持光罩,檢查轉印用圖案之座標精度。 再者,亦可視需要反覆光學膜之成膜、光阻膜之形成、光學膜之圖案化、抗蝕劑剝離而形成多層構造之複雜之轉印用圖案。 又,於藉由轉印用圖案之檢查而發現異物或缺陷之情形時,可實施將其去除或修正之步驟。 於以上之步驟之後,視需要於光罩之主表面貼附光罩護膜,藉此完成製品。 於上述光罩之製造步驟中,上述基板保持裝置10係於描繪步驟或檢查步驟中分別有利地使用。但是,並不限定於此,可於修正檢查步驟中發現之缺陷之缺陷修正步驟或其他之對光罩進行觀察或者處理之任何步驟中使用基板保持裝置10。 又,於藉由基板保持裝置10保持上述準備步驟中準備之光罩基底之保持步驟中,亦可如上述第3實施形態中所敍述般,測定形成有光學膜與光阻膜之光罩基底之主表面(膜面)之高度分佈,調整該主表面之形狀。具體而言,於上述保持步驟中,藉由基板保持裝置10將光罩基底以其主表面(膜面)為上側之方式保持。然後,於該狀態下測定光罩基底之主表面之高度分佈而獲得高度分佈資料,並且根據該高度分佈資料,使各高度調整機構20驅動,而調整光罩基底之主表面(膜面)之形狀。 <模擬結果> 圖6係對使用上述實施形態之基板保持裝置時滿足光罩所要求之座標精度之情況進行說明的、表示模擬結果之圖,(a)表示模擬時設想之光罩基板之保持狀態,(b)表示模擬之條件與結果。 基板樣品A~C係由石英玻璃構成之透明之長方形之光罩基板(兩主表面設為完全之平面),且分別具有不同之尺寸(長度×寬度×厚度)。 於將該等基板樣品A~C之各者水平地設置於基板保持裝置10時,藉由利用有限元素法之模擬驗證相鄰之支持銷之間產生之因基板之自身重量所引起之撓曲使基板之膜面側產生何種平坦度變化。進而,利用下述數式算出上述平坦度變化產生何種程度之膜面之座標偏移。 此處,因高度不同引起之測定點之座標偏移量可利用使用向量之方法算出。圖7係將基板正面29中因高度不同引起之測定點之座標偏移30以向量表現之圖。 於圖7中,較小之圈分別表示測定點31,三角形之虛線表示傾斜面32,傾斜面32內之座標偏移30以外之箭頭分別表示傾斜向量33。其中,關於傾斜面32,設想於基板正面30之高度之分佈中自任意3處之測定點31製成之傾斜面。此時,若將基板之橫向設為X方向,將基板之縱向設為Y方向,將基板之高度(厚度)方向設為Z方向,將傾斜面32與X軸方向之偏移設為ΔX,將傾斜面32與Y軸方向之偏移設為ΔY,則ΔX由下述(1)式表示,ΔY由下述(2)式表示。 ΔX=t/2×cosθx…(1) ΔY=t/2×cosθy…(2) 此處,如圖7所示,可自任意3處之測定點31製作2根傾斜向量33。根據該2根傾斜向量33之外積計算製作相對於傾斜面32之法線向量34。進而,根據法線向量34與X軸單位向量35之內積計算算出cosθx,根據法線向量34與Y軸單位向量(未圖示)之內積計算算出cosθy。只要將以此方式計算出之cosθx及cosθy分別代入至上述(1)式及(2)式,便可最終計算出X軸方向之偏移ΔX與Y軸方向之偏移ΔY。 再者,於上述(1)式及(2)式中,「t」為基板(光罩基板)之厚度。各測定點31處之基板之厚度t包含於基板之厚度分佈資料(TTV)中。但是,基板之厚度t亦可不使用TTV之數值,而使用基板之厚度之平均值。 於該模擬中,設為如下條件,即,基板樣品A~C中具有800 mm×920 mm×10 mm之尺寸之基板樣品A係由包含8×9之排列之合計72根支持銷支持,具有850 mm×1200 mm×10 mm之尺寸之基板樣品B係由包含8×11之排列之合計88根支持銷支持,具有980 mm×1150 mm×13 mm之尺寸之基板樣品C係由包含10×11之排列之合計110根支持銷支持。其結果,因基於支持銷之基板支持所產生的基板正面中之平坦度之最大變化量係基板樣品A為0.07 μm,基板樣品B為0.11 μm,基板樣品C為0.06 μm。 又,於支持各基板樣品A、B、及C之情形時,相鄰之支持銷之間隔分別設為115 mm、120 mm、115 mm,均設為150 mm以下。其結果,基板正面29中之座標之最大變化量(最大之座標偏移量)為0.006~0.012 μm。該座標偏移量係與作為顯示裝置製造用光罩之座標精度所要求之±0.2 μm相比大幅度減小,且即便於將來作為基準而要求±0.1 μm之狀況下亦可充分通過的級別。 如以上所說明般,根據本發明(包含第1~第3實施形態)之基板保持裝置,能夠減少先前之基板保持裝置中所產生的因基板背面之凹凸或載台上之異物所引起之光罩製造或處理上之座標劣化之不良情況。 本發明之基板保持裝置較佳地用於在光罩製造之過程或檢查之過程中水平地保持光罩而進行之處理用之裝置,其用途並無特別限制。尤其是,於用於光罩製造過程中所使用之描繪裝置或檢查座標精度之檢查裝置、缺陷修正裝置等處理裝置時,可明顯獲得其效果。 作為應用於本發明之基板,係用於顯示裝置製造用之光罩者,較佳為主表面為一邊300 mm以上(例如,一邊為300~1500 mm)且厚度為5~15 mm左右之正方形或長方形者。必須注意,於此種大型基板,保持狀態與所謂LSI(Large Scale Integration,大型積體電路)製造用之光罩(主表面之一邊為5~6英吋)不同。 作為對本發明之光罩進行曝光之器件之曝光裝置係作為所謂FPD(Flat Panel Display,平板顯示器)用或LCD(Liquid Crystal Display,液晶顯示器)(液晶)用而眾所周知者,存在可搭載各種規格、尺寸者之曝光裝置。例如,此種曝光裝置存在將i射線~g射線設為曝光之光的進行等倍曝光者,且存在具備特定之光學系統(NA(numerical aperture,數值孔徑)0.08~0.15左右)之投影曝光型與進行近接曝光之接近式曝光型。 應用本發明之光罩基板之光罩之種類或用途並無特別限定。除了所謂二元光罩以外,亦可廣泛應用於除了遮光部與透光部以外還具有半色調之多階光罩、具備使曝光之光部分分透過並且使光之相位偏移特定量之相位偏移器之相位偏移遮罩等具有各種構造或用途之顯示裝置製造用之光罩。進而,於為了形成相位偏移器等而於基板主表面形成特定深度之刻蝕部之光罩中,於使用本發明之基板之情形時,亦於洗淨效率與抑制異物之效果上相對於先前之基板獲得優異之效果。 尤其是,本發明之光罩係於具備包含較先前更微細之圖案之轉印用圖案者中,其效果明顯。例如,作為CD(Critical Dimension,臨界尺寸)為2 μm以下、尤其是0.5~2.0 μm更微細者,對具有0.5~1.5 μm之圖案寬度者特別有利。其原因在於,於該等高精度光罩中,缺陷之規格嚴格,所容許之異物之尺寸極小。例如,於具有上述尺寸之直徑之孔圖案中,異物之存在會對元件之動作造成致命性影響。因此,可認為於此種用途之光罩中本發明之效果明顯。因此,本發明對包含接觸孔之層較佳。 <變化例等> 本發明之技術性範圍並不限定於上述實施形態,亦包含在能夠導出藉由發明之構成要件或其組合而獲得之特定效果之範圍內施加各種變更或改良所得的形態。 例如,於上述各實施形態中,例示了與光罩基板1點接觸之柱狀之支持件(支持銷)12,但並不限定於此,亦可使用與光罩基板1線接觸之支持件。具體而言,例如,若使用前端(上端)具有圓筒之側面形狀或「魚糕型」(橢圓筒之側面形狀)之凸曲面之支持件,則亦可與光罩基板1之背面3設為具有特定長度之線接觸。於該情形時,線接觸部較佳為直線狀,其長度並無限制,例如,設為與光罩基板1之一邊大致相同之長度,並使其平行地排列。藉此,可水平地保持光罩基板1整體。 又,於上述圖2(a)中,例示了所有支持件12彼此等間隔地排列之構成,但並非必須使所有支持件12等間隔地配置。但是,較佳為各支持件12具有規則性地排列。該方面於使用具有上述線接觸之接觸部之支持件之情形時亦同樣。In general, in order to draw a reticle base or the like, a substrate holding device that holds a substrate horizontally is used. The substrate holding device includes a stage that is flat and smoothly processed as a stage on which the substrate is placed. Further, in the case where the substrate is actually held, the substrate is placed on the stage with the surface of the film surface facing upward. In the present specification, the film surface refers to the following surfaces of the two main surfaces of the substrate in the relationship between the front surface and the back surface. That is, if it is a substrate containing a transparent material before pattern formation, it means a predetermined surface on which a pattern is to be formed, and if it is a mask base on which a specific optical film or a resist film is formed, it means that these are formed. The surface of the film is a mask on which a transfer pattern is formed, or a mask intermediate as a semi-product thereof. Further, the main surface conforming to the film surface was set to the front surface, and the main surface opposite to the film surface was set as the back surface. Here, the surface of the stage of the substrate holding device is clean and is an ideal plane. If the front surface (film surface) and the back surface of the substrate placed thereon are also ideal planes, there is no problem that the coordinate accuracy is deteriorated. However, even if the two main surfaces are precisely ground at the stage of preparing the substrate for the photomask, for example, when the flatness of the back surface is insufficient or when there is a foreign matter between the stage and the substrate, Affected by these factors, the shape of the film surface of the substrate placed on the stage changes (see Fig. 8). Therefore, when the film surface side of the substrate is drawn by the specific pattern data in a state where the film surface shape changes as described above, the transfer pattern formed thereby is transferred to the image by the exposure device. In the transfer of the transfer body, that is, in the state where the change in the shape of the film surface due to the unevenness on the back side or the foreign matter disappears, the coordinate accuracy is lost and deformation occurs. Of course, the deterioration of the coordinate accuracy can be somewhat reduced by using a substrate that is polished with high precision. For example, when a substrate having high precision which is processed not only on the film surface side of the substrate but also on the back surface side is used, it is possible to suppress a change in the film surface shape at the time of drawing. However, the presence of foreign matter that occurs sporadically on the stage of the substrate holding device cannot be completely excluded. Therefore, in the present embodiment, in order to further suppress deterioration of coordinate accuracy due to the presence of such foreign matter, the contact between the back surface of the substrate and the stage is substantially in point contact or line contact, and the foreign matter is prevented from being caught. Probability. Specifically, the substrate holding device of the present embodiment holds the mask substrate for manufacturing the display device horizontally, and includes a stage including a low expansion material, and a plurality of support members, which are provided in the carrier On the stage. Further, each of the support members has a configuration in which a contact portion having a convex curved surface is provided at the tip end, and the contact portion is substantially in point contact or line contact with the main surface on the lower surface side of the photomask substrate, whereby the photomask substrate is used. Keep it horizontally. In the present specification, the photomask substrate to be held (hereinafter also referred to as "mask substrate" or simply "substrate") may be a substrate containing a transparent material, or may be any of the substrates. The surface film is suitable for the desired optical film for the transfer pattern to be obtained (including a light-shielding film that shields the exposed light, a semi-transmissive film that partially transmits the exposed light, partially transmits the exposed light, and makes the light a phase shift film having a phase shift, an antireflection film for preventing reflection of light including exposed light, or a mask base formed by a functional film (etching stopper film, conductive adjustment film, etc.) A resist substrate having a resist formed with a resist film such as a photoresist may be a mask intermediate or a mask partially or completely formed with a transfer pattern. [First Embodiment] Fig. 1 is a view for explaining a configuration of a substrate holding device according to a first embodiment of the present invention, wherein (a) is a side view showing a state of a photomask substrate before holding, and (b) is a view showing A side view of the state in which the mask substrate is held by the substrate holding device. (Photomask Substrate) The photomask substrate 1 shown in Fig. 1(a) is a photomask substrate in which a front surface 2 as a main surface is a film surface, and a light shielding film or the like is formed thereon. The mask substrate 1 is formed in a quadrangular shape (square or rectangular shape) in plan view. Further, the mask substrate 1 exemplified herein has a shape as shown in FIG. 1(a) when the flatness is measured without being deflected by its own weight. In the illustrated photomask substrate 1 , the substrate is polished with high precision so that the flatness of the front surface 2 is increased. However, there are a plurality of irregularities on the back surface 3 . As a method of measuring the flatness without being affected by the deflection caused by its own weight, for example, there is a method of vertically holding the main surfaces (front and back) of the substrate, and in this state, by flatness, respectively The flatness of the front and back sides of the substrate is measured by a measuring device or the like. The front surface and the back surface of the substrate can be grasped by setting the measurement result obtained by the method to the front flatness data and the back surface flatness data, and performing mapping. (Substrate Holding Device) The substrate holding device 10 shown in Fig. 1(b) holds the mask substrate 1 horizontally. The substrate holding device 10 is provided with a stage 11 . The stage 11 is made of a material processed into a plate shape, and preferably contains a low expansion material. Low expansion materials are materials that have a small volume change due to temperature changes. For example, in the case of ceramics or the like, a material having a very low coefficient of thermal expansion near normal temperature can be preferably used. Preferably, the coefficient of thermal expansion is 0 to 50 degrees Celsius, 0.1×10 -6 A material of /K or less is used as a constituent material of the stage 11. In the present specification, the expression "○○ to △△" in the numerical range of the predetermined value means "○○ or more and ΔΔ or less". The stage 11 is formed in a quadrangular shape (square or rectangular shape) in the same manner as the mask substrate 1. A plurality of support members 12 are disposed on the stage 11. Each of the support members 12 is a support member having a columnar pin structure (hereinafter also referred to as a "support pin"), and is provided in a state of being protruded upward from the surface (upper surface) of the stage 11 . Each of the support pins is fixed to the stage 11, and the height of the support pins is fixed (this is referred to as a height-fixed type). Here, the support pin is set to a fixed height. At the front end of each of the support members (support pins) 12, a contact portion 14 having a convex curved surface on the upper side is formed. The contact portion 14 is a portion that comes into contact with the back surface (lower surface) 3 of the mask substrate 1 when the mask substrate 1 is held by the substrate holding device 10. The contact portion 14 is made of a hard material. The contact portion 14 is, for example, a portion that is substantially in point contact with the back surface 3 of the mask substrate 1 by attaching the contact portion 14 formed in a spherical shape (spherical shape) to the front end of the support pin. Actually, the back surface 3 of the lower main surface of the substrate is supported by the plurality of support members 12 in a substantially point-contact manner with the back surface 3 of the substrate facing downward and the photomask substrate 1 placed on the stage 11. At the front end, the mask substrate 1 is horizontally held in this state. Furthermore, the contact portion having the convex curved surface and the back surface of the substrate are in point contact in principle, and when the contact portion is slightly deformed by the weight of the substrate, the contact is also substantially in point contact, and the effect of the present invention is obtained. Therefore, the present invention encompasses this state. The same applies to the following line contact. At this time, a plurality of support members (support pins) 12 support the weight of the substrate from the back surface 3 side of the mask substrate 1 via the contact portion 14, whereby the mask substrate 1 is horizontally held. Further, when at least four holders 12 are disposed on the stage 11, the mask substrate 1 contacts the side of the support back surface 3 at a point of at least four points, and supports the weight thereof. As the material of the contact portion 14, a hard material such as ruby or sapphire can be preferably used. However, in addition to this, the contact portion 14 may be formed of a metal having a relatively high hardness. For example, it is preferred to use a Vickers hardness of 800 kgw/mm. 2 The above material. When the contact portion 14 is formed of a material having a low hardness, the point contact cannot be maintained due to abrasion, and it is necessary to replace it repeatedly. On the other hand, when the contact portion 14 is formed of a material having a high hardness, abrasion of the contact portion 14 can be suppressed, so that the state of point contact can be maintained for a long period of time. Further, as shown in FIG. 2(a), the substrate holding device 10 of the present embodiment includes a base 15 under the stage 11. The base 15 is formed into a quadrangular shape (square or rectangular shape) in the same manner as the stage 11 . The stage 11 is placed horizontally on the base 15, and more preferably has a function of being horizontally held on the base 15 in a non-contact state. Specifically, for example, it is possible to provide a configuration in which the stage 11 is lifted by the pressure of the gas or the like, and the stage 11 is horizontally held in the non-contact state by the floating mechanism. 15 on. In this case, the stage 11 is preferably configured to be floated by the pressure of the gas (for example, air pressure) while maintaining the horizontal posture on the base 15. Therefore, for example, in the case where the drawing device must hold the stage 11 of the mask substrate 1 horizontally, the stage 11 can be floated from the base 15 to a specific height as indicated by an arrow in the drawing. In this state, the stage 11 is horizontally moved. As shown in FIG. 2(b), the support member 12 has a contact portion 14 having a convex curved surface (a spherical surface in the present embodiment) at the tip end. The support members 12 are preferably regularly arranged on the stage 11 at a fixed distance. In this case, it is preferable that the plurality of support members 12 are arranged on the stage 11 at intervals of 150 mm or less, more preferably 60 to 150 mm, and still more preferably 60 to 130 mm. In FIG. 2(a), as an example, a plurality of support members 12 are arranged in a lattice shape on the stage 11. In the case where the support member 12 is constituted by the support pins, it is preferable that the support pins are regularly arranged such that the interval between the adjacent support pins (the distance between the centers) becomes 150 mm or less as described above. Further, in the case where the support member 12 is constituted by the support pins, it is preferable that at least four support pins are provided on the stage 11. In this case, the contact portion 14 of the support member 12 is contacted with respect to at least four points on the back surface 3 opposed to the stage 11 with respect to the mask substrate 1 held by the substrate holding device 10. Further, by the contact of the four points, the weight of the mask substrate 1 is supported by the respective support members 12. Here, if the number of the support pins disposed on the stage 11 with respect to the size or weight of the mask substrate 1 is too small, the substrate may be deflected between the support pins and adversely affect the coordinate accuracy. . Further, if the number of supporting pins is too large, the number of contact points between the supporting pin and the substrate is increased accordingly, and the probability that the foreign matter is interposed between the supporting pin and the substrate is increased. In particular, the mask substrate for manufacturing a display device has a square or rectangular shape of 300 mm or more on one side of the main surface, and has a large area and a weight. Therefore, it is difficult to support with contact of 3 points or less. Therefore, in the case where the photomask substrate for manufacturing the display device is supported by the point contact by the support pin, it is preferably supported at a contact point of preferably 9 to 350 dots, more preferably 36 to 300 dots. As described above, the height of each contact point can be set equal. Alternatively, the back flatness data may be adjusted to adjust the height of each contact point so as to offset the height distribution of the back surface. In the first embodiment, when the mask substrate 1 is horizontally held by the substrate holding device 10, the plurality of support members 12 provided on the stage 11 are respectively passed through the contact portion 14. It is in point contact with the back surface of the mask substrate 1 at three points. According to this configuration, the back surface 3 side of the mask substrate 1 is not placed on the stage 11 in surface contact, and the mask substrate 1 is held as the upper surface of the stage 11 by a plurality of support members 12. Since it is in a floating state, the foreign matter 16 is not interposed between the upper surface of the stage 11 and the back surface of the mask substrate 1 (FIG. 1). Further, since the mask substrate 1 is supported in contact with each of the holders 12, it is less likely to cause foreign matter to be caught between the back surface of the mask substrate 1 and the tip end of the holder 12. Therefore, when the processing on the film surface side of the mask substrate 1 (for example, drawing processing) is performed in this state, it is possible to suppress a change in the shape of the film surface caused by the insertion of the foreign matter 16. Thereby, deterioration of coordinate accuracy due to a change in the shape of the film surface can be suppressed. As a result, the transfer pattern formed on the mask substrate 1 can be transferred to the object to be transferred with excellent coordinate accuracy. As described above, in the first embodiment, it is possible to suppress a change in the shape of the film surface of the mask substrate 1 caused by the sandwiching of the foreign matter 16, thereby suppressing a difference in the shape of the film surface during drawing and exposure. Degradation of coordinate accuracy. Thereby, it is possible to prevent the risk of deformation of the mask substrate 1 due to the insertion of the foreign matter 16, and to achieve the desired purpose of improving the coordinates of the pattern formed on the transfer target. However, in the case where the back surface 3 of the photomask substrate 1 is caused by irregularities having insufficient flatness, a further design for suppressing the influence thereof can be performed. In other words, when the flatness of the back surface 3 is insufficient and the back surface 3 has irregularities, the unevenness is reflected on the film surface side of the mask substrate 1 placed horizontally on the stage 11 of the substrate holding device 10. Therefore, there is a problem that the coordinate accuracy after the processing (for example, the drawing process) of the substrate film surface performed in this state is adversely affected. Therefore, the inventors of the present invention have conceived a substrate holding device which can obtain higher coordinate accuracy than the above-described first embodiment. Hereinafter, specific aspects will be described as the second embodiment and the third embodiment. (Second Embodiment) Fig. 3 is a view for explaining a configuration of a substrate holding device according to a second embodiment of the present invention, wherein (a) is a side view showing a state of the photomask substrate before holding, and (b) is a view showing A side view of the state in which the mask substrate is held by the substrate holding device. (Photomask Substrate) The photomask substrate 1 shown in Fig. 3 (a) is a film surface on which the front surface 2 as a main surface is formed, and a light-shielding film or the like is formed thereon. Photomask base. However, the flatness can be made flater than the mask substrate 1 used in the first embodiment. In other words, the flatness of the front surface 2 is as high as that of the first embodiment when the flat mask 1 is exemplified in the state where the flat mask 1 is not subjected to the deflection due to its own weight, but the back surface 3 is The unevenness is larger than that of the first embodiment, and the thickness of the substrate becomes uneven. (Substrate Holding Device) In the substrate holding device 10 shown in FIG. 3(b), a plurality of holders 12 are provided on the stage 11 including the low expansion material. This aspect is the same as that of the first embodiment described above. However, in the first embodiment, the height of the support pins constituting each of the support members 12 is fixed. In the second embodiment, the height adjustment mechanism 20 is provided in each of the support members 12. The height adjustment mechanism 20 adjusts the height position of the contact portion 14 in the support member 12 by the pressure of the gas (for example, air pressure or the like). In the height adjustment mechanism 20, as a driving device for adjusting the height position of the contact portion 14, for example, as shown in FIG. 4, an air damper 21 is provided, and the air damper 21 can be supplied to and from the air damper 21 Move the rod 22 in the direction. At the front end (upper end) of the rod 22, a spherical contact portion 14 is attached to the protrusion 23. The ball-shaped contact portion 14 is vertically movable in accordance with the load received. Here, as an example, the height adjustment mechanism 20 uses a pressure of a gas, but is not limited thereto. For example, a force based on a magnetic force may be used. In the height adjusting mechanism 20 including the above configuration, the rod 22 is moved (up and down) in the vertical direction by supplying compressed air to the air damper 21 or exhausting the supplied compressed air. Further, in a state where a load is applied to the contact portion 14, the height of the contact portion 14 can be adjusted (changed) by the pressure of the compressed air supplied to the air damper 21 by variable control. When the compressed air is supplied to the air damper 21 of the height adjusting mechanism 20 while the photomask substrate 1 is not placed on the stage 11, the contact portion 14 is pushed up by the rise of the rod 22. At this time, the thrust acts on the contact portion 14 of the support member 12 corresponding to the pressure of the compressed air. Therefore, by supplying the compressed air of the same pressure to the height adjusting mechanisms 20 of all the support members 12 provided on the stage 11, the contact portions 14 of the respective support members 12 can be raised by the same upper thrust force. When the substrate holding device 10 having the above configuration is used to hold the mask substrate 1, the mask substrate 1 is placed on the stage 11 with its front surface 2 facing upward and the back surface 3 facing downward. In this manner, as in the first embodiment, the mask substrate 1 is supported in contact with each of the holders 12 provided on the stage 11 via the contact portion 14. When the compressed air is supplied to the height adjusting mechanism 20 of each of the holders 12 and the contact portion 14 is raised, and the mask substrate 1 is downloaded in this state, the support member 12 is applied downward by the mask substrate 1 itself. The weight caused by the weight. At this time, in each of the holders 12, the contact portion 14 is stationary at a height position at which the thrust acting on the contact portion 14 via the rod 22 and the gravity acting on the contact portion 14 due to the weight of the mask substrate 1 are balanced. Therefore, when the photomask substrate 1 is placed on the stage 11, the gravity caused by the weight of the photomask substrate 1 and the upper thrust generated by the height adjusting mechanism 20 are balanced (substantially equal). The mode may set the pressure of the compressed air supplied to each height adjustment mechanism 20. In the second embodiment, the configuration is such that compressed air is supplied to the respective height adjustment mechanisms 20 at equal pressure. Therefore, even when the flatness of the back surface 3 of the mask substrate 1 is insufficient and there is unevenness on the back surface 3, the contact portion 14 of each of the support members 12 can be maintained while maintaining the uneven shape of the back surface 3. The photomask substrate 1 is horizontally supported. The reason is as follows. On the back surface 3 of the mask substrate 1, a portion having a relatively large thickness (a portion having a large weight per unit area) and a portion having a relatively small thickness (a portion having a small weight per unit area) are present due to the unevenness. In the case where compressed air is supplied to the respective height adjusting mechanisms 20 at equal pressures, the contact portion 14 which is in contact with the portion having a relatively large thickness is subjected to greater gravity, and is therefore stationary at a relatively low position. On the other hand, the contact portion 14 which is in contact with a portion having a relatively small thickness as described above is subjected to a smaller gravity and is therefore stationary at a relatively higher position. That is, the height positions of the contact portions 14 are different depending on the unevenness of the back surface 3 of the mask substrate 1. Therefore, the height of the contact portion 14 can be adjusted depending on the shape of the back surface of the substrate to be used (passively). This is also the case when the mask substrate 1 is placed on the stage 11 and the compressed air is supplied to the height adjustment mechanism 20 at equal pressure. Therefore, in the second embodiment, even if irregularities are present on the back surface 3 of the cover substrate 1, the unevenness can be absorbed by the difference in height position of each contact portion 14. Therefore, the uneven shape of the back surface 3 of the mask substrate 1 is not reflected on the front surface (film surface) 2 side, and the mask substrate 1 can be horizontally held. Further, even if the foreign matter 16 existing on the stage 11 or the unevenness due to the flatness of the back surface 3 is insufficient, the influence can be reduced and the level (flatness) of the film surface can be maintained at a higher level. Further, when processing (for example, drawing processing) of the mask substrate 1 placed on the substrate holding device 10, deterioration of coordinate accuracy can be further suppressed. (3) FIG. 5 is a view for explaining a configuration of a substrate holding device according to a third embodiment of the present invention, wherein (a) is a side view showing a state of the photomask substrate before holding, and (b) is a view showing (c) is a side view showing a state in which the substrate holding device holds the mask substrate without driving the height adjusting mechanism, and (c) is a side view showing a state in which the height adjusting mechanism is driven to hold the mask substrate by the substrate holding device. (Photomask Substrate) In the same manner as in the second embodiment, the mask substrate 1 shown in Fig. 5(a) is a film surface on which the front surface 2 as a main surface is formed, and a light shielding film or the like is formed thereon. Photomask base. When the flat mask is measured in a state where the flatness of the front surface 2 is not affected by the deflection due to its own weight, the flatness of the front surface 2 is higher than that of the first embodiment, but the unevenness of the back surface 3 is smaller than that of the first embodiment. Large, and the thickness of the substrate becomes uneven. (Substrate Holding Device) In the substrate holding device 10 shown in FIGS. 5(b) and 5(c), a plurality of holders 12 are provided on the stage 11 including the low expansion material, and the support members (support pins) 12 are provided. A height adjustment mechanism 20 is provided. This aspect is the same as that of the second embodiment described above. However, in the third embodiment, the second embodiment differs from the second embodiment in that each of the plurality of support members (support pins) 12 is provided with a height adjustment mechanism 20 that can independently adjust the height. That is, each of the plurality of height adjustment mechanisms 20 corresponding to the plurality of holders 12 includes a drive device that raises the position of the contact portion 14 in accordance with the designated height adjustment amount (actively). Specifically, for example, the air damper 21 and the rod 22 shown in FIG. 4 described above are used to constitute the driving device of the height adjusting mechanism 20, whereby the height adjusting mechanism 20 is a pressure using gas (here, air pressure is used). The height of the contact portion 14 is adjusted so that the pressure of the compressed air supplied to the air damper 21 can be individually controlled for each of the height adjusting mechanisms 20. Thereby, when the mask substrate 1 is horizontally held, the height of the contact portion 14 of the plurality of holders 12 can be independently adjusted. Further, the position of the contact portion 14 can be raised at a desired upper thrust force in accordance with the specified height adjustment amount for each of the support members 12, respectively. Here, a case is considered in which, as shown in FIG. 5(b), when the mask substrate 1 is held by the substrate holding device 10 without driving the height adjusting mechanism 20, in a portion, the support member 12 is provided. Foreign matter 16 is interposed between the contact portion 14 and the back surface 3 of the mask substrate 1. In this case, there is a risk that the unevenness of the back surface 3 of the mask substrate 1 shown in FIG. 5(a) and the foreign matter 16 shown in FIG. 5(b) cause the unevenness or foreign matter on the back surface 3 side. The sandwiching of 16 is reflected on the front surface 2 side of the photomask substrate 1, and the flatness of the film surface is insufficient. Therefore, in the third embodiment, before the respective height adjustment mechanisms 20 are driven, the unevenness due to the front side (film surface) 2 side of the mask substrate 1 is measured in the state shown in FIG. 5(b). The height distribution. The height distribution measuring method can be carried out, for example, by a height measuring device which is disposed at a distance from the front surface 2 of the mask substrate 1 corresponding to the main surface of the film surface side by air cushioning or the like. The height measuring device has a mechanism that is vertically above and below the height due to the shape (concavity and convexity) of the front surface 2 of the mask substrate 1, and the mechanism can measure the change in the height of the front surface 2 of the mask substrate 1. However, as a method of measuring the height distribution of the front surface 2 of the mask substrate 1, in addition to the above method, a method of measuring the gas flow rate for maintaining the same member as the height measuring device at a fixed position, or measuring may be used. The method of electrostatic capacitance between the gaps, the method based on pulse counting by laser, the method of optical focusing, and the like are not particularly limited to any method. As the measurement point for the height measurement, it is preferable to use measurement points which are regularly arranged at a fixed interval. For example, a grid point with a pitch of 10 mm can be set as a measurement point. According to this measurement, it is possible to obtain the height of the unevenness which occurs on the front surface 2 side due to the unevenness of the back surface 3 or the inclusion of the foreign matter 16 when the substrate substrate 1 is held by the substrate holding device 10 as shown in Fig. 5(b). Distribution. Next, using the above-described height profile, the height adjustment amount of each support member 12 is determined so that the deviation of the height of the substrate film surface disappears. Then, the height adjusting mechanism 20 of each of the holders 12 is driven in accordance with the height adjustment amount. At the time of driving, for example, when the height adjusting mechanism 20 uses the air damper 21 (FIG. 4), the relationship between the flow rate of the air flowing into the air damper 21 and the rising size of the contact portion 14 is determined in advance. Moreover, when a height adjustment mechanism using a repulsive force based on a magnetic force is employed, the correlation between the amount of current flowing to the electromagnet (not shown) and the rising dimension of the contact portion 14 is obtained in advance. Then, after the height adjustment amount is determined based on the height profile, the flow rate of the air flowing into the air damper 21 or the amount of current flowing to the electromagnet is controlled in order to raise the position of the contact portion 14 in accordance with the height adjustment amount. However, in addition to this, for example, a sensor for detecting the amount of rise of the detecting lever 22 may be used to detect the position (height) of the contact portion 14 that is moved upward by the driving of the height adjusting mechanism 20, based on the detection result. The amount of air flowing into the air damper 21 or the amount of current flowing to the electromagnet is controlled. When the substrate holding device 10 having the above-described configuration is used to hold the mask substrate 1, the height distribution of the front surface 2 of the mask substrate 1 as the film surface is measured in a state in which the photomask is placed, and based on the measurement. As a result, the determined height adjustment amount drives the height adjustment mechanism 20 of each of the support members 12. In other words, in the measurement result of the height distribution, the height adjustment mechanism 20 is driven to lower the contact portion 14 in a portion corresponding to the front surface portion 2 that protrudes upward by the influence of the shape of the back surface. The height adjustment mechanism 20 is driven in such a manner that the contact portion 14 is relatively high in the portion of the front surface 2 which is recessed downward. By this means, the unevenness of the back surface 3 side of the mask substrate 1 or the insertion of the foreign matter 16 is reflected on the front surface 2 side, and the front surface 2 can be maintained flat, and the photomask substrate 1 can be horizontally in this state. Keep it. In addition, as a factor which affects the height distribution of the film surface of the mask substrate 1, that is, the front surface 2 side when the mask substrate 1 is placed on the substrate holding device 10, the unevenness of the back surface 3 side or the foreign matter 16 is sandwiched. In addition, for example, if there are some irregularities on the film surface side of the photomask substrate 1, this factor is also included. However, the unevenness on the film surface side of the mask substrate 1 does not disappear when the mask substrate 1 is removed from the substrate holding device 10 (for example, when it is drawn) and is placed in another device (for example, during exposure). Remaining. Therefore, in the case where the deterioration of the coordinate accuracy due to the change in the shape of the film surface at the time of drawing and the exposure is regarded as a problem, the amount due to the unevenness on the film surface side is excluded. Specifically, when there are a plurality of irregularities on the film surface side of the photomask substrate 1 and it is intended to suppress the influence on the coordinate accuracy due to the mask substrate 1, the following aspects may be employed. In other words, the flatness distribution data (the front surface flatness data) of the front surface 2 which is the film surface of the mask substrate 1 is grasped in advance by flatness measurement. Then, the measurement result of the height distribution performed in the state shown in FIG. 5(b) above is corrected by using the front flatness data which is grasped in advance. Specifically, the front flatness data is subtracted from the measurement result of the height distribution. Then, only the amount corresponding to the difference obtained thereby is reflected to the height adjusting mechanism of each of the holders 12. Thereby, the influence of the unevenness on the film surface side can be suppressed. Further, the data of the flatness distribution (front flatness data) of the film surface side of the photomask substrate 1 can be flexed by the self-weight in the photomask substrate 1 as described above. In the state of being affected (for example, in a state where the main surface of the photomask substrate 1 is held vertically), the flatness of the front surface 2, which is the film surface of the mask substrate 1, is measured by a flatness measuring device. Further, instead of subtracting the front flatness data from the measurement result of the height distribution, the above-described back flatness data can be used to obtain an approximate result. That is, the height adjustment amount of each support member 12 is determined using a map of the flatness obtained by the back flatness data. Then, the height adjustment mechanism 20 of each of the support members 12 can be driven in accordance with the height adjustment amount. <Application Example> The present invention is not limited to the substrate holding device, and may be implemented as another device or method. Specific application examples will be described below. (Drawing Device) The present invention can also be realized as a drawing device including the above-described substrate holding device 10. That is, at the time of drawing, the substrate holding device 10 described above is applied as a holding device for holding the mask substrate 1. In this case, the drawing device includes a substrate holding device 10 that holds the mask substrate 1 horizontally, and a drawing device that draws the photoresist film of the mask substrate 1 held by the substrate holding device 10. The depicting device can use either a laser or an electron beam. In the actual drawing step, since the front surface (film surface) 2 of the mask substrate 1 as the mask base is placed on the upper side and the mask substrate 1 is placed on the stage 11, the flatness of the film surface side is determined according to The flatness of the back side 3 or the thickness of the substrate (TTV; total thickness variation) is deteriorated. In this case, when the drawing device is configured by using the substrate holding device 10 described above, it is possible to prevent the flatness of the film surface side from being deteriorated due to the shape of the back surface. Therefore, it is possible to suppress the deterioration of the coordinates at the time of drawing from being deteriorated at the time of transfer. In this case, there is a large meaning in the manufacture of a photomask for manufacturing a display device having a high tendency to be finer and more integrated. (Photomask Inspection Apparatus) Further, the present invention can be realized as a mask inspection apparatus including the above-described substrate holder 10. In other words, the substrate holding device 10 can be applied to the photomask inspection device, and after the transfer pattern is formed on the photomask substrate 1, it is checked whether or not the transfer pattern satisfies a specific standard. As the mask inspection device, a mask coordinate inspection device or the like can be exemplified. (Manufacturing Method of Photomask) The present invention can also be realized as a method of manufacturing a photomask using the substrate holding device 10. In this case, in the manufacturing steps of the photomask, for example, the following steps are employed. (Preparation step) First, a reticle base is prepared. Specifically, at least one optical film or the like is formed on the main surface of the photomask substrate including the transparent material. The optical film comprises (a) a light-shielding film that shields the exposed light, (b) a semi-transmissive film that partially transmits the exposed light, (c) a portion that transmits the exposed light and shifts the phase of the light. The offset film, (d) an anti-reflection film that prevents reflection of the exposed light, and the like. Further, a photoresist film is formed on the main surface of the photomask substrate so as to cover the optical film. Thereby, a reticle substrate in which an optical film and a photoresist film are formed on the main surface of the reticle substrate including the transparent material is obtained. (Holding Step) Then, the substrate holder 10 prepared by the preparation step is held by the substrate holding device 10. At this time, the film surface on which the optical film or the like is formed is directed upward, and the mask substrate is placed on the stage 11, whereby the mask base is horizontally held by the plurality of holders 12. (Drawing and Developing Step) Then, the mask base held in the holding step is subjected to drawing based on the pattern data. Specifically, the photoresist film is drawn using a laser plotter or the like. At this time, the photoresist film was laser-drawn according to the mask material made based on the design of the desired transfer pattern. Then, development of the photoresist film is performed. Thereby, the excess portion of the photoresist film is removed to form a resist pattern. (Patterning Step) Then, patterning of the optical film is performed. Specifically, the resist pattern is used as an etching mask, and the optical film is etched to form a pattern of the optical film. In this step, the optical film is patterned to form a photomask having a pattern for transfer. Furthermore, in the patterning step, the etching of the optical film may be either wet etching or dry etching. In general, a photomask substrate for manufacturing a display device is a large substrate, and its shape or size is also diverse. Therefore, the etching of the optical film is preferably applied by wet etching. (Resist Removal Step) Then, the above-described resist pattern is removed. Specifically, after the resist pattern is removed by resist stripping, the mask is washed. (Inspection Step) Next, the above-described transfer pattern was inspected. In the inspection step, the substrate holding device 10 holds the photomask and checks the coordinate accuracy of the transfer pattern. Further, it is also possible to form a complicated transfer pattern of a multilayer structure by repeating film formation of an optical film, formation of a photoresist film, patterning of an optical film, and peeling of a resist. Further, when foreign matter or defects are found by inspection of the transfer pattern, the step of removing or correcting the foreign matter or the defect can be performed. After the above steps, the reticle film is attached to the main surface of the reticle as needed to complete the article. In the manufacturing step of the photomask described above, the substrate holding device 10 is advantageously used in the drawing step or the inspection step, respectively. However, the present invention is not limited thereto, and the substrate holding device 10 can be used in any step of correcting the defect found in the inspection step or in any other step of observing or processing the mask. Further, in the step of holding the mask base prepared in the preparation step described above by the substrate holding device 10, the mask base on which the optical film and the resist film are formed may be measured as described in the third embodiment. The height distribution of the main surface (film surface) adjusts the shape of the main surface. Specifically, in the holding step described above, the substrate holder 10 holds the mask substrate with its main surface (film surface) as the upper side. Then, in this state, the height distribution of the main surface of the reticle base is measured to obtain height distribution data, and according to the height distribution data, each height adjustment mechanism 20 is driven to adjust the main surface (film surface) of the reticle base. shape. <Simulation result> FIG. 6 is a view showing a simulation result when the substrate holding device of the above-described embodiment is used to satisfy the coordinate accuracy required for the reticle, and (a) shows the maintenance of the reticle substrate assumed during the simulation. State, (b) indicates the conditions and results of the simulation. The substrate samples A to C are transparent rectangular mask substrates made of quartz glass (the two main surfaces are completely flat), and each has a different size (length × width × thickness). When each of the substrate samples A to C is horizontally disposed on the substrate holding device 10, the deflection caused by the weight of the substrate caused by the adjacent support pins is verified by simulation using the finite element method. What kind of flatness change occurs on the film surface side of the substrate. Further, the coordinate equation of the film surface to which the flatness change is caused is calculated by the following equation. Here, the coordinate offset of the measurement point due to the difference in height can be calculated by using the vector method. Fig. 7 is a diagram showing the coordinate deviation 30 of the measurement point due to the difference in height in the front surface 29 of the substrate in a vector. In FIG. 7, the smaller circle represents the measurement point 31, the dotted line of the triangle represents the inclined surface 32, and the arrows other than the coordinate offset 30 in the inclined surface 32 represent the inclination vector 33, respectively. Among them, the inclined surface 32 is assumed to be an inclined surface made from any three measurement points 31 in the distribution of the height of the substrate front surface 30. In this case, when the lateral direction of the substrate is the X direction, the longitudinal direction of the substrate is set to the Y direction, the height (thickness) direction of the substrate is set to the Z direction, and the offset between the inclined surface 32 and the X-axis direction is ΔX. When the deviation between the inclined surface 32 and the Y-axis direction is ΔY, ΔX is represented by the following formula (1), and ΔY is represented by the following formula (2). ΔX=t/2×cos θx (1) ΔY=t/2×cos θy (2) Here, as shown in FIG. 7 , two tilt vectors 33 can be created from any three measurement points 31 . The normal vector 34 with respect to the inclined surface 32 is calculated based on the outer product of the two tilt vectors 33. Further, cos θx is calculated based on the inner product of the normal vector 34 and the X-axis unit vector 35, and cos θy is calculated from the inner product of the normal vector 34 and the Y-axis unit vector (not shown). By substituting the cos θx and cos θy calculated in this way into the above equations (1) and (2), respectively, the offset ΔY in the X-axis direction and the shift ΔY in the Y-axis direction can be finally calculated. Further, in the above formulas (1) and (2), "t" is the thickness of the substrate (mask substrate). The thickness t of the substrate at each measurement point 31 is included in the thickness distribution data (TTV) of the substrate. However, the thickness t of the substrate may not use the value of the TTV, but the average value of the thickness of the substrate. In the simulation, the substrate sample A having a size of 800 mm × 920 mm × 10 mm in the substrate samples A to C was supported by a total of 72 support pins including an arrangement of 8 × 9 The substrate sample B of the size of 850 mm × 1200 mm × 10 mm is supported by a total of 88 support pins including an arrangement of 8 × 11 , and the substrate sample C having a size of 980 mm × 1150 mm × 13 mm is composed of 10 × The total arrangement of 11 is supported by 110 support pins. As a result, the maximum variation in the flatness in the front surface of the substrate due to the substrate support by the support pin was 0.07 μm for the substrate sample A, 0.11 μm for the substrate sample B, and 0.06 μm for the substrate sample C. Further, in the case of supporting the substrate samples A, B, and C, the intervals of the adjacent support pins are set to 115 mm, 120 mm, and 115 mm, respectively, and are all set to 150 mm or less. As a result, the maximum amount of change (the largest coordinate shift amount) of the coordinates in the front surface 29 of the substrate is 0.006 to 0.012 μm. This coordinate offset is greatly reduced as compared with ±0.2 μm required for the coordinate accuracy of the reticle for manufacturing a display device, and can be sufficiently passed even if it is required to be ±0.1 μm as a reference in the future. . As described above, according to the substrate holding device of the present invention (including the first to third embodiments), it is possible to reduce the unevenness of the back surface of the substrate or the foreign matter on the stage caused by the substrate holding device in the prior substrate holding device. Defects in the deterioration of the coordinates of the cover manufacturing or handling. The substrate holding device of the present invention is preferably used for a device for processing a photomask horizontally during the process of manufacturing the photomask or during inspection, and the use thereof is not particularly limited. In particular, when it is used for a drawing device used in a mask manufacturing process or a processing device such as an inspection device for inspecting coordinate accuracy or a defect correction device, the effect can be clearly obtained. The substrate to be used in the present invention is preferably used for a photomask for manufacturing a display device, and preferably has a square having a side of 300 mm or more (for example, 300 to 1500 mm on one side) and a thickness of 5 to 15 mm. Or rectangular. It is to be noted that in such a large-sized substrate, the holding state is different from that of the LSI (Large Scale Integration) manufacturing mask (one side of the main surface is 5 to 6 inches). An exposure apparatus for a device for exposing a photomask of the present invention is known as a FPD (Flat Panel Display) or an LCD (Liquid Crystal Display) (Liquid Crystal Display) (liquid crystal display), and can be mounted in various specifications. Exposure device for size. For example, in such an exposure apparatus, there is a case where the exposure light of the i-ray to the g-ray is double-exposed, and there is a projection exposure type having a specific optical system (NA (numerical aperture) of about 0.08 to 0.15). Proximity exposure type for proximity exposure. The type or use of the photomask to which the photomask substrate of the present invention is applied is not particularly limited. In addition to the so-called binary mask, it can also be widely applied to a multi-step mask having a halftone in addition to the light-shielding portion and the light-transmitting portion, and having a portion that transmits the exposed light and shifts the phase of the light by a specific amount. A photomask for manufacturing a display device having various configurations or uses, such as a phase shift mask of an offset. Further, in the case of forming a etched portion having a certain depth on the main surface of the substrate in order to form a phase shifter or the like, in the case of using the substrate of the present invention, the effect of cleaning efficiency and suppression of foreign matter is also relative to Previous substrates have achieved excellent results. In particular, the photomask of the present invention is effective in a transfer pattern having a pattern including a finer pattern than before. For example, a CD (Critical Dimension) having a thickness of 2 μm or less, particularly 0.5 to 2.0 μm, is particularly advantageous for a pattern width of 0.5 to 1.5 μm. The reason for this is that in such high-precision photomasks, the specifications of the defects are strict, and the size of the foreign matter allowed is extremely small. For example, in a hole pattern having a diameter of the above size, the presence of foreign matter may have a fatal effect on the operation of the element. Therefore, the effect of the present invention in the photomask for such use can be considered to be remarkable. Accordingly, the present invention is preferred for layers comprising contact holes. <Variation and the like> The technical scope of the present invention is not limited to the above-described embodiments, and includes various modifications or improvements in a range in which the specific effects obtained by the constituent elements of the invention or a combination thereof can be derived. For example, in each of the above embodiments, a columnar support member (support pin) 12 that is in point contact with the mask substrate 1 is exemplified, but the present invention is not limited thereto, and a support member that is in line contact with the mask substrate 1 may be used. . Specifically, for example, if the front end (upper end) has a convex shape having a side shape of a cylinder or a "fish cake type" (side shape of an elliptical cylinder), it may be provided with the back surface 3 of the mask substrate 1. For line contact with a specific length. In this case, the line contact portions are preferably linear, and the length thereof is not limited. For example, the line contact portions are substantially the same length as one side of the mask substrate 1, and are arranged in parallel. Thereby, the entire mask substrate 1 can be held horizontally. Further, in the above-described FIG. 2(a), the configuration in which all the support members 12 are arranged at equal intervals is exemplified, but it is not necessary to arrange all the support members 12 at equal intervals. However, it is preferable that each of the support members 12 be regularly arranged. This aspect is also the same in the case of using the support having the contact portion of the above-described line contact.
1‧‧‧光罩基板
2‧‧‧正面
3‧‧‧背面
10‧‧‧基板保持裝置
11‧‧‧載台
12‧‧‧支持件
14‧‧‧接觸部
15‧‧‧基台
16‧‧‧異物
20‧‧‧高度調整機構
21‧‧‧空氣阻尼器
22‧‧‧桿
23‧‧‧突體
29‧‧‧基板正面
30‧‧‧座標偏移
31‧‧‧測定點
32‧‧‧傾斜面
33‧‧‧傾斜向量
34‧‧‧法線向量
35‧‧‧X軸單位向量
51‧‧‧基板
52‧‧‧正面
53‧‧‧背面
61‧‧‧載台
62‧‧‧平面
63‧‧‧異物
t‧‧‧厚度
ΔX‧‧‧X軸方向之偏移
ΔY‧‧‧Y軸方向之偏移1‧‧‧Photomask substrate
2‧‧‧ positive
3‧‧‧Back
10‧‧‧Substrate holder
11‧‧‧ stage
12‧‧‧Support
14‧‧‧Contacts
15‧‧‧Abutment
16‧‧‧ Foreign objects
20‧‧‧ Height adjustment mechanism
21‧‧‧Air damper
22‧‧‧ pole
23‧‧‧
29‧‧‧The front side of the substrate
30‧‧‧Coordinate offset
31‧‧‧Measurement point
32‧‧‧Sloping surface
33‧‧‧Tilt vector
34‧‧‧ normal vector
35‧‧‧X-axis unit vector
51‧‧‧Substrate
52‧‧‧ positive
53‧‧‧Back
61‧‧‧ stage
62‧‧‧ plane
63‧‧‧ Foreign objects
t‧‧‧Width ΔX‧‧‧X-axis direction offset ΔY‧‧‧Y-axis offset
圖1係用以說明本發明之第1實施形態之基板保持裝置之構成的圖,(a)係表示保持前之光罩基板之狀態之側視圖,(b)係表示藉由基板保持裝置保持有光罩基板之狀態之側視圖。 圖2係用以說明本發明之第1實施形態之基板保持裝置之構成的圖,(a)係表示藉由基板保持裝置保持光罩基板之狀態之立體圖,(b)係表示支持件之構成之側視圖。 圖3係用以說明本發明之第2實施形態之基板保持裝置之構成的圖,(a)係表示保持前之光罩基板之狀態之側視圖,(b)係表示藉由基板保持裝置保持有光罩基板之狀態之側視圖。 圖4係表示具備高度調整機構之支持件之構成之側視圖。 圖5係用以說明本發明之第3實施形態之基板保持裝置之構成的圖,(a)係表示保持前之光罩基板之狀態之側視圖,(b)係表示不使高度調整機構驅動地藉由基板保持裝置保持有光罩基板之狀態的側視圖,(c)係表示使高度調整機構驅動地藉由基板保持裝置保持有光罩基板之狀態的側視圖。 圖6係對實施形態之基板保持裝置對光罩之座標精度帶來之有利之效果進行說明的、表示模擬結果之圖,(a)表示模擬時設想之光罩基板之保持狀態,(b)表示模擬之條件與結果。 圖7係將基板正面中因高度不同引起之測定點之座標偏移以向量表現的圖。 圖8係用以說明先前之基板之保持狀態之圖,(a)係表示保持前之光罩基板之狀態之側視圖,(b)係表示將光罩基板載置並保持於載台之狀態之側視圖。1 is a view for explaining the configuration of a substrate holding device according to a first embodiment of the present invention, wherein (a) is a side view showing a state of the photomask substrate before holding, and (b) is a state of holding by the substrate holding device. A side view of the state of the reticle substrate. FIG. 2 is a view for explaining a configuration of a substrate holding device according to a first embodiment of the present invention, wherein (a) is a perspective view showing a state in which a mask substrate is held by a substrate holding device, and (b) is a view showing a configuration of a support member. Side view. 3 is a view for explaining the configuration of a substrate holding device according to a second embodiment of the present invention, wherein (a) is a side view showing a state of the photomask substrate before holding, and (b) is a state of holding by the substrate holding device. A side view of the state of the reticle substrate. Fig. 4 is a side view showing the configuration of a support member having a height adjustment mechanism. Fig. 5 is a view for explaining the configuration of a substrate holding device according to a third embodiment of the present invention, wherein (a) is a side view showing a state of the photomask substrate before holding, and (b) is a view showing that the height adjusting mechanism is not driven. (c) is a side view showing a state in which the substrate holding device holds the photomask substrate, and (c) is a side view showing a state in which the photo-adhesive substrate is held by the substrate holding device while the height adjusting mechanism is driven. 6 is a view showing a simulation result of the substrate holding device of the embodiment which is advantageous for the coordinate accuracy of the reticle, and (a) shows a state in which the reticle substrate is held during the simulation, and (b) Indicates the conditions and results of the simulation. Fig. 7 is a diagram showing the coordinate deviation of the measurement points due to the difference in height in the front surface of the substrate in a vector. 8 is a view for explaining a state in which the substrate is held in the prior art, wherein (a) is a side view showing a state of the photomask substrate before holding, and (b) is a state in which the photomask substrate is placed and held on the stage. Side view.
1‧‧‧光罩基板 1‧‧‧Photomask substrate
2‧‧‧正面 2‧‧‧ positive
3‧‧‧背面 3‧‧‧Back
10‧‧‧基板保持裝置 10‧‧‧Substrate holder
11‧‧‧載台 11‧‧‧ stage
12‧‧‧支持件 12‧‧‧Support
14‧‧‧接觸部 14‧‧‧Contacts
16‧‧‧異物 16‧‧‧ Foreign objects
Claims (13)
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JP2016006845 | 2016-01-18 |
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TW105141184A TW201732997A (en) | 2016-01-18 | 2016-12-13 | Substrate holding device, drawing device, photomask inspection device, and method of manufacturing a photomask |
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JP (1) | JP2017129848A (en) |
KR (1) | KR20170086405A (en) |
CN (1) | CN106980225A (en) |
TW (1) | TW201732997A (en) |
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US10254214B1 (en) * | 2018-02-20 | 2019-04-09 | Nanotronics Imaging, Inc. | Systems, devices, and methods for combined wafer and photomask inspection |
JP7263088B2 (en) * | 2019-04-08 | 2023-04-24 | キヤノン株式会社 | IMPRINT APPARATUS, IMPRINT METHOD, AND PRODUCT MANUFACTURING METHOD |
JP7438018B2 (en) * | 2020-05-11 | 2024-02-26 | 東京エレクトロン株式会社 | Substrate mounting method and substrate mounting mechanism |
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JPH09172055A (en) * | 1995-12-19 | 1997-06-30 | Fujitsu Ltd | Electrostatic chuck and method for attracting wafer |
JPH09283605A (en) * | 1996-04-09 | 1997-10-31 | Canon Inc | Substrate sucking and holding device and manufacturing method therefor |
JPH11330216A (en) * | 1998-05-19 | 1999-11-30 | Nikon Corp | Substrate holder and aligner |
JP4416195B2 (en) * | 1998-10-23 | 2010-02-17 | キヤノン株式会社 | Charged particle beam exposure method and apparatus, and device manufacturing method |
JP2000252288A (en) * | 1999-03-04 | 2000-09-14 | Komatsu Ltd | Substrate-retaining device |
JP2000340640A (en) * | 1999-05-31 | 2000-12-08 | Toto Ltd | Non-contacting electrostatically attracting apparatus |
JP4342210B2 (en) * | 2003-05-16 | 2009-10-14 | 芝浦メカトロニクス株式会社 | STAGE DEVICE, PASTE COATING DEVICE USING SAME, AND PASTE COATING METHOD |
JP2005101226A (en) * | 2003-09-24 | 2005-04-14 | Hoya Corp | Substrate holding device, substrate processing apparatus, substrate testing device, and substrate holding method |
JP2005150708A (en) * | 2003-10-24 | 2005-06-09 | Nikon Corp | Electrostatic chuck, stage device, and exposure apparatus |
JP2006054289A (en) * | 2004-08-11 | 2006-02-23 | Nikon Corp | Substrate holder, stage apparatus, exposure apparatus, and device manufacturing method |
KR20060108975A (en) * | 2005-04-14 | 2006-10-19 | 삼성전자주식회사 | Wafer loading apparatus for preventing local defocus |
JP4848263B2 (en) * | 2006-12-19 | 2011-12-28 | 株式会社堀場製作所 | Plate member inspection device |
JP4214265B2 (en) * | 2007-05-23 | 2009-01-28 | レーザーテック株式会社 | Optical measuring device and substrate holding device |
JP4782744B2 (en) * | 2007-08-24 | 2011-09-28 | 京セラ株式会社 | Adsorption member, adsorption device, and adsorption method |
JP2009266886A (en) * | 2008-04-22 | 2009-11-12 | Nikon Corp | Mask, mask holder, photolithography machine, and manufacturing method of device |
JP2010016176A (en) * | 2008-07-03 | 2010-01-21 | Kyocera Corp | Test piece holder |
JP5331638B2 (en) * | 2008-11-04 | 2013-10-30 | Hoya株式会社 | Photomask manufacturing method and drawing apparatus for display device manufacturing |
JP2010238986A (en) * | 2009-03-31 | 2010-10-21 | Nikon Corp | Exposure apparatus and device manufacturing method |
JP2012060107A (en) * | 2010-08-11 | 2012-03-22 | Toto Ltd | Surface evaluation method of attraction retainer |
JP2012140671A (en) * | 2010-12-28 | 2012-07-26 | Canon Tokki Corp | Film-forming apparatus |
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2016
- 2016-12-13 JP JP2016240885A patent/JP2017129848A/en active Pending
- 2016-12-13 TW TW105141184A patent/TW201732997A/en unknown
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2017
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JP2017129848A (en) | 2017-07-27 |
KR20170086405A (en) | 2017-07-26 |
CN106980225A (en) | 2017-07-25 |
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