CN107546171B - Substrate lifting mechanism, substrate carrying table and substrate processing device - Google Patents
Substrate lifting mechanism, substrate carrying table and substrate processing device Download PDFInfo
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- CN107546171B CN107546171B CN201710499522.4A CN201710499522A CN107546171B CN 107546171 B CN107546171 B CN 107546171B CN 201710499522 A CN201710499522 A CN 201710499522A CN 107546171 B CN107546171 B CN 107546171B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract
The invention provides a substrate lifting mechanism, a substrate carrying platform and a substrate processing device, which can control the height position of a lifting pin to a desired position even when the main body of the substrate carrying platform is deformed. In a processing container of a plasma processing apparatus, a plurality of substrate lifting mechanisms (8) which are arranged on a carrying table main body (5) of a substrate carrying table (3) and used for lifting and lowering a substrate comprise: a lift pin (51) inserted into the insertion hole (5a) of the substrate mounting table main body (5), provided in a manner of being capable of lifting and lowering in a manner of protruding and sinking relative to the substrate mounting surface, and supporting the substrate by the top end thereof; a lift-guide unit (52) which supports the lift pin (51) so as to be able to move up and down inside the lift-guide unit and guides the lift pin (51); and a drive unit (54) for driving the lift pin (51) to move up and down, wherein the lift-guide unit (52) and the drive unit (54) are supported by the mounting table body (5) and are not supported by the processing container (bottom wall 2 a).
Description
Technical Field
The present invention relates to a substrate lifting mechanism for lifting a substrate relative to a substrate mounting table of a substrate processing apparatus, a substrate mounting table, and a substrate processing apparatus.
Background
In a process of manufacturing a Flat Panel Display (FPD), a plasma process such as etching, sputtering, CVD (chemical vapor deposition) or the like is performed on a substrate to be processed.
In a plasma processing apparatus for performing such a plasma process, a substrate is processed while being placed on a substrate placing table provided in a chamber that can be evacuated. The loading and unloading of the substrate on the substrate mounting table are performed by lifting and lowering the substrate by the substrate lifting and lowering mechanism. The substrate lifting mechanism has lifting pins which penetrate through the substrate carrying platform and lift, and is arranged at a plurality of positions corresponding to the substrate. When the substrate is loaded, the lift pins are brought into a state of protruding from the surface of the table main body, and the substrate loaded on the transfer arm is transferred onto the pins and the lift pins are lowered. When the substrate is unloaded, the lift pins are raised from the state where the substrate is placed on the mounting table main body to raise the substrate from the surface of the mounting table main body, and the substrate is transferred to the transfer arm in this state. Such a technique is a conventional technique and is disclosed in patent document 1, for example.
In the case of applying high-frequency power for plasma generation or high-frequency power for bias application to a substrate mounting table during plasma processing, patent document 2 describes that, in the case of performing plasma processing on an insulating substrate such as a glass substrate for an FPD, a conductive member is used as an elevating pin so that the position of the elevating pin does not become uneven in plasma, and the height position of the tip end is strictly adjusted when the elevating pin is at the same potential as the substrate mounting table and the elevating pin is at the retracted position.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 11-340208
Patent document 2: japanese patent laid-open No. 2007 and 273685
Disclosure of Invention
Problems to be solved by the invention
However, according to the method described in patent document 2, a mechanism portion for lifting and lowering the lift pins is currently attached to the chamber body, and the lift pins themselves are also provided in the mechanism portion.
Therefore, when the main body of the substrate mounting table is deformed due to heat or the like, there is a possibility that the lift pins themselves cannot follow the deformation, and the height positions of the lift pins cannot be controlled to desired positions.
Therefore, an object of the present invention is to provide a substrate lifting mechanism capable of controlling the height position of a lifting pin to a desired position even when a main body of a substrate mounting table is deformed, a substrate mounting table having such a substrate lifting mechanism, and a substrate processing apparatus.
Means for solving the problems
In order to solve the above-described problems, a first aspect of the present invention provides a substrate lifting mechanism for lifting and lowering a substrate by providing a plurality of table bodies of a substrate table on which the substrate is placed in a processing container of a plasma processing apparatus for performing a plasma process on the substrate, the substrate lifting mechanism comprising: a lift pin inserted into the insertion hole of the substrate mounting table main body, provided to be capable of being lifted and lowered so as to protrude from and retract into the substrate mounting surface, and supporting the substrate at a tip end thereof; a lift-guide unit which supports the lift pin so as to be movable up and down therein and guides the lift pin; and a driving unit configured to drive the lift pins to move up and down, wherein the lift-guide unit and the driving unit are supported by the mounting table body and are not supported by the processing container.
In the aspect 1, the mounting table may further include a mounting portion that is provided inside the mounting table body and that hermetically mounts the elevation guide portion.
The lift-guide unit includes: a guide member airtightly attached to the attachment portion, having a 1 st space therein, communicating with the insertion hole of the mounting table body, through which the lift pin is inserted, and guiding the lift pin; a bellows having a 2 nd space communicating with the 1 st space of the guide member, capable of attaching a lower end portion of the lift pin, and extending and contracting as the lift pin moves up and down; a lifting member which is lifted by the driving unit and lifts the lifting pin via a lower end portion of the bellows; and a column part forming a lifting path of the lifting member, wherein the 1 st space and the 2 nd space are communicated with a vacuum atmosphere in the processing container through the insertion hole.
The driving portion is an electric cylinder (motor cylinder), and includes: a base attached to a lower end portion of the column portion; a motor mounted on the base; a link rod extending upward from the motor through the base; and a lifting head mounted on the top end of the connecting rod and used for lifting the lifting component. The driving unit further includes a link guide unit that is built in the base and guides the link.
The mounting table body is applied with high-frequency power, and the substrate lifting mechanism further includes a high-frequency shielding cover member provided to cover at least the lifting/guiding portion. In this case, the upper end of the lid member is fixed to the bottom of the processing container, and the lower end thereof is in contact with the lower surface of the base through a spring member, thereby shielding the high frequency. The column part has a plurality of shafts extending vertically along a lifting path of the lifting member, an intermediate part of the shaft and the lifting member are formed of an insulating material, and the intermediate part of the shaft and the lifting member block high-frequency power from the mounting table main body.
The elevation guide portion can be lifted together with the mounting table body during maintenance.
In accordance with a 2 nd aspect of the present invention, there is provided a substrate mounting table for mounting a substrate in a processing chamber of a plasma processing apparatus for performing a plasma process on the substrate, the substrate mounting table comprising: a mounting table main body; and a plurality of substrate lifting mechanisms provided in the mounting table main body for lifting and lowering the substrate, wherein the substrate lifting mechanisms have the structure according to claim 1.
In accordance with a 3 rd aspect of the present invention, there is provided a substrate mounting apparatus for a plasma processing apparatus for performing a plasma process on a substrate, the substrate mounting apparatus comprising: a processing container for accommodating substrates; a substrate mounting table provided in the processing container and on which a substrate is mounted; a process gas supply mechanism configured to supply a process gas into the process container; an exhaust mechanism for exhausting the inside of the processing container; and a plasma generating mechanism for generating a plasma of a process gas in the process container, wherein the substrate mounting table includes: a mounting table main body; and a plurality of substrate lifting mechanisms provided in the mounting table main body for lifting and lowering the substrate, wherein the substrate lifting mechanisms have the structure according to claim 1.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, since the elevation-guide section for guiding the elevation pin by supporting the elevation pin in the interior thereof so as to be movable up and down and the drive section for driving the elevation pin to be elevated and lowered are supported by the stage body and are not supported by the process container, even when the stage body is deformed due to disturbance of plasma heat or the like, the elevation pin can follow the deformation of the stage body, and the height position of the tip end of the elevation pin can be controlled to a desired position. Therefore, process variations in the positions of the lift pins can be suppressed.
Further, as described above, since the height position of the tip end of the lift pin can be strictly controlled, and the process unevenness can be suppressed, the substrate lift mechanism can be disposed even in a product portion of the substrate where the substrate lift mechanism (lift pin) cannot be disposed due to the risk of the process unevenness in the related art. Therefore, the substrate lifting mechanism can be freely arranged relative to the substrate, and the substrate can be stably lifted and lowered by less number than the conventional substrate lifting mechanism. In addition, this contributes to reduction in the cost of the apparatus.
Drawings
Fig. 1 is a sectional view showing a plasma etching apparatus to which an embodiment of the present invention is applied.
Fig. 2 is a sectional view showing a substrate lifting mechanism according to an embodiment of the present invention.
Fig. 3 is an enlarged cross-sectional view of a main part of the lid member of the substrate lifting mechanism of fig. 2.
Fig. 4 is a sectional view showing a structure of a conventional substrate lifting mechanism.
Fig. 5 is a sectional view for explaining a state at the time of maintenance of the substrate lifting mechanism.
Description of the reference numerals
1: plasma etching apparatus (plasma processing apparatus)
2: chamber (treatment container)
3: substrate mounting table
5: base material
8: substrate lifting mechanism
10: spray head
15: process gas supply pipe
18: processing gas supply source
24a, 24 b: matching device
25a, 25 b: high frequency power supply
30: exhaust part
40: control unit
51: lifting pin
52: lift-guide
53: mounting part
54: driving part
55: cover part
61: guide member
62: pillar part
63: lifting component
64: corrugated pipe
73: shaft
73 b: intermediate shaft part
81: base seat
82: electric motor
84: connecting rod
85: lifting head
86: connecting rod guide part
91: shielding plate (shield spring clamp)
G: a substrate.
Detailed Description
Embodiments of the present invention will be described below with reference to the drawings.
Fig. 1 is a sectional view showing a plasma etching apparatus to which an embodiment of the present invention is applied.
As shown in fig. 1, the plasma etching apparatus 1 is a capacitively-coupled plasma processing apparatus for performing a plasma process, for example, a plasma etching process on a rectangular FPD glass substrate (hereinafter, simply referred to as a "substrate"). Examples of FPDs include Liquid Crystal Displays (LCDs), Electroluminescence (EL) displays, Plasma Display Panels (PDPs), and the like.
The plasma etching apparatus 1 has a chamber 2 formed in a rectangular cylinder shape from, for example, aluminum whose surface has been subjected to alumite treatment (anodic oxidation treatment).
A substrate mounting table 3 on which a substrate G is mounted is provided at the bottom of the chamber 2 via a frame-shaped spacer member 4 formed of an insulator. The substrate mounting base 3 functions as a lower electrode. The substrate mounting table 3 is formed of a metal such as aluminum, and includes: a base material 5 constituting a mounting table main body; an insulating shield ring 6 provided around the upper portion of the base material 5; an insulating ring 7 disposed around the side surface of the base material 5; and a plurality of substrate lifting mechanisms 8 for lifting and lowering the substrate G. The substrate lifting mechanism 8 includes a lifting pin 51 as described later, and the lifting pin 51 is inserted into an insertion hole 5a provided in the base material 5. The space between the spacer member 4 and the substrate 5 and the space between the spacer member 4 and the bottom wall 2a of the chamber 2 are hermetically sealed, a space 9 of an atmospheric atmosphere is formed between the substrate 5 and the bottom wall 2a, and the substrate 5 and the bottom wall 2a are insulated from each other by the space 9.
The base material 5 is connected to a power supply line 23 for supplying high-frequency power. The feeder line 23 branches into feeder lines 23a and 23b from the middle, the feeder line 23a is connected to a matching box 24a and a high-frequency power supply 25a for plasma generation, and the feeder line 23b is connected to a matching box 24b and a high-frequency power supply 25b for bias generation. The frequency of the high-frequency power supply 25a for generating plasma is in the range of 10 to 100MHz, for example, 13.56 MHz. The high-frequency power supply 25b for bias generation is used to introduce ions into the substrate 5, and has a frequency in the range of 50kHz to 10MHz, for example, 3.2 MHz.
An electrostatic chuck (not shown) for electrostatically attracting the substrate G is provided on the surface of the base material 5 of the substrate mounting table 3. A temperature adjustment mechanism and a temperature sensor (both not shown) for controlling the temperature of the substrate G are provided in the base material 5. Between the base material 5 of the substrate mounting table 3 and the bottom wall 2a of the chamber 2, a plurality of fasteners (not shown) are used to fasten the substrate mounting table 3 so as to ensure insulation between the above components and prevent the substrate mounting table 3 from warping due to vacuum evacuation in the chamber 2. A heat transfer gas supply mechanism (not shown) is provided to supply a heat transfer gas, such as He gas, for transferring heat between the substrate G and the substrate mounting table 3 in a state where the substrate G is mounted on the substrate mounting table 3.
A shower head 10 that supplies a process gas into the chamber 2 and functions as an upper electrode is provided above the chamber 2 so as to face the substrate mounting table 3. The shower head 10 has a gas diffusion space 11 formed therein for diffusing the process gas, and a plurality of discharge holes 12 formed on a surface facing the substrate mounting table 3 for discharging the process gas.
A gas inlet 14 is provided on the upper surface of the shower head 10, the gas inlet 14 is connected to a process gas supply pipe 15, and the process gas supply pipe 15 is connected to a process gas supply source 18. The process gas supply pipe 15 is provided with an on-off valve 16 and a mass flow controller 17. In practice, the process gas supply source 18 is provided in plurality depending on the number of the process gases, and is disposed from each of the plurality of locationsThe gas supply sources 18 each extend out of the process gas supply pipe 15. A process gas for plasma etching is supplied from the process gas supply source 18. As the processing gas, a halogen-based gas, O, or the like can be used2Gases, Ar gases, and the like, which are generally used in this field.
A plurality of exhaust ports 29 (only 2 are shown) are formed in the edge or corner of the bottom wall of the chamber 2, and an exhaust portion 30 is provided in each exhaust port 29. The exhaust unit 30 includes: an exhaust pipe 31 connected to the exhaust port 29; an automatic pressure control valve (APC)32 that adjusts the pressure in the chamber 2 by adjusting the opening degree of the exhaust pipe 31; and a vacuum pump 33 for exhausting the chamber 2 through an exhaust pipe 31. The chamber 2 is evacuated by the vacuum pump 33, and the inside of the chamber 2 is set and maintained in a predetermined vacuum atmosphere by adjusting the opening degree of the automatic pressure control valve (APC)32 during the plasma etching process.
A transfer port 35 for transferring the substrate G and a gate valve 36 for opening and closing the transfer port are provided in one side wall of the chamber 2.
The plasma etching apparatus 1 further includes a control unit 40 having a microprocessor (computer) for controlling each component thereof.
Next, the substrate lifting mechanism 8 will be described.
Fig. 2 is a sectional view showing the substrate lifting mechanism 8. The substrate lifting mechanism 8 is provided at a plurality of positions on the peripheral edge and the central portion of the substrate G. The arrangement and number of the substrate lifting mechanisms 8 are appropriately set according to the size and shape of the substrate G so that the substrate G can be lifted and lowered with less warpage.
The substrate lifting mechanism 8 includes: a conductive lift pin 51 penetrating the base material 5 and lifting and lowering while protruding and sinking into the substrate mounting surface of the base material 5; a lift-guide unit 52 for supporting the lift pin 51 so as to be movable up and down therein and guiding the lift pin 51; a mounting portion 53 for mounting the elevation and depression guide portion 52 on the substrate mounting table 3; a driving unit 54 for driving the up-down pin 51 to move up and down; and a lid member 55 covering a portion lower than the bottom wall 2a of the chamber 2 of the elevation-guide portion 52.
The elevation-guide portion 52 includes: a guide member 61 which is provided at a position closest to the upper base material 5, has a cylindrical shape, and guides the lift pin; a support portion 62 attached to the lower end of the guide member 61; a lifting member 63 made of an insulating material such as resin and adapted to be lifted and lowered along a lifting path formed in the column part 62 to lift and lower the lifting pin 51; and a bellows 64 which is provided between the upper end of the column part 62 and the vertically movable member 63 and expands and contracts with the vertical movement of the vertically movable pin 51. The base end portion of the lifter pin 51 is attached to the lifter 63 via the lower end portion of the bellows 64.
The column section 62 includes an upper end ring 71, a lower end ring 72, and a plurality of shafts 73 connecting these rings. The upper end ring 71 is attached to the guide member 61, and the lower end ring 72 is attached to the driving section 54. The shaft 73 has an intermediate shaft 73b made of an insulating material such as resin between an upper shaft 73a and a lower shaft 73c made of metal. The elevating member 63 ascends and descends along the shaft 73.
The mounting portion 53 is provided inside the substrate mounting table 3, and the guide member 61 of the elevation-guide portion 52 is fixed to the mounting portion 53 by screws and hermetically sealed.
The lift pin 51 is inserted through an insertion hole 5a provided in the base 5 through the inside of the bellows 64 and the inside of the guide member 61. The spaces inside the guide member 61 and the bellows 64 communicate with the inside of the chamber 2 via the insertion hole 5a, and the spaces are maintained in a vacuum atmosphere during the plasma processing. On the other hand, the outside of the space becomes an atmospheric atmosphere.
The driving unit 54 is an electric cylinder, and includes: a base 81 to which the lower end ring 72 of the column part 62 is attached; a motor 82 provided below the base 81 and attached to the base 81 via a plurality of guide shafts 83; a link 84 extending upward from the motor 82 through the base 81; and a lift head 85 attached to a distal end of the link 84 and configured to lift and lower the lift member 63. The base 81 incorporates a link guide portion 86 for straightly guiding the link 84, and the lifter pin 51 can be stably lifted and lowered via the lifter member 63 by the link guide portion 86.
Then, by the motor 82, the elevating head 85 is raised via the link 84 guided by the link guide 86 in the base 81, and the elevating member 63 is thereby raised from the reference position along the shaft 73 of the column part 62 to reach the raised position, and along with this, the elevating pin 51 is raised, and the tip end of the elevating pin 51 protrudes above the substrate mounting surface of the substrate mounting table 3. Further, by lowering the lift head 85 by the motor 82 via the link 84 guided by the link guide 86 in the base 81, the lift member 63 is lowered from the raised position to the reference position, and the tip end of the lift pin 51 is positioned below the mounting surface of the substrate mounting table 3.
At this time, when the lift pin 51 is lowered, the height position of the tip end thereof is strictly adjusted. That is, when the height position of the tip of the lift pin 51 is lower than 0.1mm from the substrate mounting surface of the substrate mounting table 3, the plasma becomes non-uniform at this position and etching unevenness occurs, and therefore, the height position of the lift pin 51 is adjusted to be within 0.1mm from the substrate mounting surface.
As described above, the lift-guide portion 52 that guides the lift pins 51 and the drive portion 54 that drives the lift pins 51 are supported so as to be able to move up and down inside thereof, are supported by the base material 5 that is the mounting table main body of the substrate mounting table 3, and are not supported by the bottom wall 2a of the chamber 2, and the lift-guide portion 52 and the drive portion 54 are suspended from the base material 5.
The lid member 55 has a box shape, an upper end thereof is attached to the bottom wall 2a of the chamber 2, and a lower end thereof supports the base 81 of the driving portion 54. as shown in fig. 3, an annular shield sheet 91 formed of a spring member is provided on an upper surface of the lower end of the lid member 55, and the shield sheet 91 is in contact with a peripheral edge of a lower surface of the base 81. Thus, the lid member 55 covers a portion affected by the high-frequency power, and therefore, can shield RF noise.
Next, a processing operation of the plasma etching apparatus 1 configured as described above will be described.
First, in order to prevent plasma unevenness from occurring at the lifting position of the lift pin 51 during the plasma etching process, the height position of the tip of the lift pin 51 is adjusted to within 0.1mm from the substrate mounting surface of the substrate mounting table 3.
In the state where the position of the lift pins 51 is adjusted as described above, the gate valve 36 is opened, the substrate G is carried into the chamber 2 from a vacuum transfer chamber not shown by a transfer arm not shown through the carrying-in/out port 35, the lift pins 51 are raised from the reference position to the raised position by the drive unit 54 of the substrate lift mechanism 8, the lift pins 51 are brought into a state of protruding from the substrate mounting surface of the substrate mounting table 3, and the substrate G is mounted on the lift pins 51 of the substrate lift mechanism 8. After the transfer arm is retracted into the vacuum transfer chamber, the lifting member 63 is lowered to the reference position by the driving unit 54. Thus, the tips of the lift pins 51 are accommodated in the substrate mounting table 3, and the substrate G is mounted on the substrate mounting surface of the substrate mounting table 3.
Thereafter, the gate valve 36 is closed, the temperature of the substrate G is controlled by adjusting the temperature of the base material 5 of the substrate mounting table 3 by the temperature adjustment mechanism, the inside of the chamber 2 is exhausted by the vacuum pump 33, the pressure in the chamber 2 is adjusted to a predetermined vacuum degree by the automatic pressure control valve (APC)32, the flow rate of the processing gas is adjusted by the mass flow controller 17 from the processing gas supply source 18, and the processing gas is introduced into the chamber 2 through the processing gas supply pipe 15 and the shower head 10.
In this state, high-frequency power for generating plasma is applied from the high-frequency power supply 25a to the base material 5 of the substrate mounting table 3 via the matching box 24a, a high-frequency electric field is generated between the substrate mounting table 3 as a lower electrode and the shower head 10 as an upper electrode, plasma of the processing gas is generated, and etching processing is performed on the substrate G by the plasma. Further, high-frequency power for bias generation is applied from the high-frequency power supply 25b to the base material 5 via the matching box 24b, and ions in the plasma are introduced into the substrate G to improve the anisotropy of etching.
However, when the plasma etching is performed as described above, the chamber 2 and the components in the chamber 2 are affected by the heat of the plasma and the like. In this case, in the conventional substrate lifting mechanism 8' shown in fig. 4, for example, the lifting/lowering guide portion 52 for lifting and lowering the lifting/lowering pin 51 and guiding the lifting/lowering member is supported by the bottom wall 2a of the chamber 2 by the insulating support member 57, and the guide shaft 58 for guiding the lifting/lowering member is attached to the bottom wall 2a of the chamber 2. Therefore, when the substrate 5 of the substrate mounting table 3 and the chamber 2 are different from each other due to the deformation caused by the heat of the plasma or the like, the lift pins 51 themselves cannot follow the deformation of the substrate 5 of the substrate mounting table 3, and the height positions of the lift pins 51 are varied. Therefore, it is difficult to maintain the height position of the tip of the lift pin 51 within 0.1mm from the substrate mounting surface of the substrate mounting table 3 during the process, and there is a possibility that process irregularities such as etching irregularities may occur.
In contrast, in the present embodiment, the following configuration is used as the substrate lifting mechanism 8: the lift-guide portion 52 that supports the lift pin 51 so as to be movable up and down therein and guides the lift pin 51, and the drive portion 54 that drives the lift pin 51 are supported by the base material 5 and are not supported by the bottom wall 2a of the chamber 2, and the lift-guide portion 52 and the drive portion 54 are suspended from the base material 5.
Therefore, even when the substrate 5 is deformed due to disturbance of plasma heat or the like, the lift pins 51 can follow the deformation of the substrate 5, and the height position of the distal ends of the lift pins 51 can be controlled to a desired position in the plasma etching. Specifically, the distance can be within 0.1mm from the substrate mounting surface of the substrate mounting table 3. Therefore, processing unevenness such as etching unevenness of the substrate G at the position of the lift pin can be suppressed.
As described above, since the height position of the tip end of the lift pin 51 can be strictly controlled, and the process unevenness such as the etching unevenness can be suppressed, the substrate lift mechanism 8 can be disposed even in a product portion of the substrate G where the substrate lift mechanism 8 (lift pin 51) cannot be disposed due to the risk of the process unevenness. Therefore, the substrate lifting mechanism 8 (lifting pins 51) can be freely arranged with respect to the substrates G, and the substrates G can be stably lifted and lowered by a smaller number than the conventional substrate lifting mechanism 8. In addition, this contributes to reduction in the cost of the apparatus.
The lid member 55 of the substrate lift mechanism 8 is attached to the bottom wall of the chamber 2, and only the shield piece 91 provided on the upper surface of the lower end of the lid member 55 is in contact with the susceptor 81 of the drive unit 54, so that the lift pins 51 are not prevented from following the deformation of the substrate mounting table 3 when the substrate mounting table 3 is deformed due to disturbance of plasma heat or the like. Further, since the shield sheet 91 is formed of a spring member and can maintain contact with the lower surface of the base 81, the RF shielding effect is not reduced.
In the elevation guide unit 52, the intermediate shaft portion 73b of the shaft 73 and the elevation member 63 are formed of an insulating material, and thus, it is possible to block high-frequency power applied to the base material 5 of the substrate mounting base 3.
In addition, as shown in fig. 5, during maintenance, the elevation/depression guide 52 of the substrate elevation mechanism 8 can be lifted together with other parts of the substrate mounting table such as the base 5. At this time, the relatively heavy driving portion 54 can be separated from the elevation-guide portion 52, and remains in a state of being supported by the lid member 55 attached to the bottom wall 2a of the chamber 2. Therefore, the maintainability is high.
Although one embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications can be made within the scope of the idea of the present invention. For example, although the present invention is applied to a plasma etching apparatus in the above embodiment, the present invention is not limited to this, and can be applied to other plasma processing apparatuses such as plasma CVD.
In the above-described embodiments, the present invention has been described as being applied to a capacitively-coupled plasma processing apparatus, but the present invention is not limited thereto, and may be applied to other plasma processing apparatuses such as an inductively-coupled plasma processing apparatus and a microwave plasma processing apparatus.
In the above-described embodiment, the example in which the glass substrate is used as the substrate has been described, but another insulating substrate such as a ceramic substrate may be used. In addition, a semiconductor substrate or the like may be used.
Claims (9)
1. A substrate lifting mechanism which is provided with a plurality of loading table main bodies of a substrate loading table for loading a substrate in a processing container of a plasma processing device for performing plasma processing on the substrate, and which lifts and lowers the substrate, wherein the loading table main bodies are arranged on a bottom wall of the processing container, the substrate lifting mechanism comprising:
a lift pin inserted into the insertion hole of the substrate mounting table main body, provided to be capable of being lifted and lowered so as to protrude from and retract into the substrate mounting surface, and supporting the substrate at a tip end thereof;
a lift-guide unit that supports the lift pin so as to be movable up and down therein and guides the lift pin;
a driving unit configured to drive the lift pin to move up and down; and
a cover member fixed to the bottom wall and provided so as to cover at least a portion of the elevation-guide portion protruding below the bottom wall,
the elevation-guide section and the drive section are supported by the table main body and are not supported by the bottom wall,
the mounting table body is applied with high-frequency power, and the cover member is in contact with the elevation-guide portion via a spring member to shield high frequency.
2. The substrate lift mechanism of claim 1, wherein:
the mounting table further includes a mounting portion provided inside the mounting table body and mounting the elevation/depression guide portion in an airtight manner.
3. The substrate lift mechanism of claim 2, wherein:
the elevation-guide part includes:
a guide member airtightly attached to the attachment portion, having a 1 st space therein, which communicates with the insertion hole of the mounting table body and through which the lift pin is inserted, and guiding the lift pin;
a bellows having a 2 nd space communicating with the 1 st space of the guide member, capable of attaching a lower end portion of the lift pin, and extending and contracting as the lift pin moves up and down;
a lifting member which is lifted and lowered by the driving unit and lifts and lowers the lifting pin via a lower end portion of the bellows; and
a column part forming a lifting path of the lifting member,
the 1 st space and the 2 nd space are communicated with a vacuum atmosphere in the processing container through the insertion hole.
4. The substrate lift mechanism of claim 3, wherein:
the drive portion is an electric cylinder, and it includes: a base attached to a lower end portion of the column portion; a motor mounted to the base; a link rod extending from the motor to the upper side through the base; and a lifting head which is arranged at the top end of the connecting rod and enables the lifting component to lift.
5. The substrate lift mechanism of claim 4, wherein:
the driving unit further includes a link guide unit which is built in the base and guides the link.
6. The substrate lift mechanism of claim 3, wherein:
the column part has a plurality of shafts extending vertically along a lifting path of the lifting member,
the intermediate portion of the shaft and the elevating member are formed of an insulating material, and the intermediate portion of the shaft and the elevating member block high-frequency power from the mounting table main body.
7. The substrate lift mechanism of any of claims 1 to 6, wherein:
the lift-guide portion can be lifted together with the table main body at the time of maintenance.
8. A substrate mounting table on which a substrate is mounted in a processing chamber of a plasma processing apparatus that performs plasma processing on the substrate, the substrate mounting table comprising:
a mounting table main body; and
a plurality of substrate lifting mechanisms arranged on the loading platform main body and used for lifting the substrate,
the substrate lifting mechanism is the substrate lifting mechanism of any one of claims 1 to 7.
9. A substrate processing apparatus for performing a plasma process on a substrate, comprising:
a processing container for accommodating substrates;
a substrate mounting table provided in the processing container and on which a substrate is mounted;
a process gas supply mechanism configured to supply a process gas into the process container;
an exhaust mechanism for exhausting the inside of the processing container; and
a plasma generating mechanism for generating plasma of the processing gas in the processing container,
the substrate stage includes:
a mounting table main body; and
a plurality of substrate lifting mechanisms arranged on the loading platform main body and used for lifting the substrate,
the substrate lifting mechanism is the substrate lifting mechanism of any one of claims 1 to 7.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-126599 | 2016-06-27 | ||
| JP2016126599A JP6650841B2 (en) | 2016-06-27 | 2016-06-27 | Substrate lifting mechanism, substrate mounting table and substrate processing device |
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| CN107546171A CN107546171A (en) | 2018-01-05 |
| CN107546171B true CN107546171B (en) | 2021-01-19 |
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| CN201710499522.4A Active CN107546171B (en) | 2016-06-27 | 2017-06-27 | Substrate lifting mechanism, substrate carrying table and substrate processing device |
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| Country | Link |
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| JP (1) | JP6650841B2 (en) |
| KR (1) | KR102002216B1 (en) |
| CN (1) | CN107546171B (en) |
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| KR101987577B1 (en) * | 2018-01-24 | 2019-06-10 | 주식회사 기가레인 | Substrate processing apparatus including an exhaust adjusting part linked with an elevating inducing part |
| TW202013581A (en) * | 2018-05-23 | 2020-04-01 | 日商東京威力科創股份有限公司 | Plasma treatment device |
| CN109192696B (en) * | 2018-08-10 | 2021-06-08 | 北京北方华创微电子装备有限公司 | Lift needle system, vacuum reaction chamber and semiconductor processing equipment |
| JP7122907B2 (en) * | 2018-08-24 | 2022-08-22 | 東京エレクトロン株式会社 | Lifting equipment, semiconductor manufacturing equipment assembly equipment, semiconductor manufacturing equipment assembly method |
| DE102018006903A1 (en) * | 2018-08-30 | 2020-03-05 | Vat Holding Ag | Galvanically isolated pin lifting device |
| CN109309041B (en) * | 2018-09-14 | 2020-12-11 | 惠科股份有限公司 | Substrate processing apparatus and method for adjusting substrate processing apparatus |
| JP2020167288A (en) * | 2019-03-29 | 2020-10-08 | 東京エレクトロン株式会社 | Plasma processing apparatus and maintenance method of the same |
| DE102019006050A1 (en) * | 2019-08-28 | 2021-03-04 | Vat Holding Ag | Pin lifting device with sliding guide |
| CN110610895A (en) * | 2019-09-29 | 2019-12-24 | 江苏鲁汶仪器有限公司 | Spring thimble mechanism for platform and vacuum plasma processing cavity |
| JP7446145B2 (en) * | 2020-04-07 | 2024-03-08 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP7450512B2 (en) * | 2020-10-07 | 2024-03-15 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| CN114496893B (en) * | 2020-10-23 | 2024-08-27 | 合肥欣奕华智能机器股份有限公司 | Substrate clamping device and substrate operation platform |
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| JPH0774231A (en) * | 1993-08-31 | 1995-03-17 | Tokyo Electron Ltd | Treatment apparatus and its usage method |
| JP4060941B2 (en) | 1998-05-26 | 2008-03-12 | 東京エレクトロン株式会社 | Plasma processing method |
| JP4244555B2 (en) * | 2002-02-25 | 2009-03-25 | 東京エレクトロン株式会社 | Support mechanism for workpiece |
| JP4354243B2 (en) * | 2003-04-21 | 2009-10-28 | 東京エレクトロン株式会社 | Elevating mechanism and processing apparatus for workpiece |
| JP5025609B2 (en) * | 2003-09-04 | 2012-09-12 | 株式会社日立ハイテクノロジーズ | Vacuum processing equipment |
| JP4052472B2 (en) * | 2004-01-29 | 2008-02-27 | 三菱重工業株式会社 | Plasma processing apparatus and maintenance method thereof |
| US20060281310A1 (en) * | 2005-06-08 | 2006-12-14 | Applied Materials, Inc. | Rotating substrate support and methods of use |
| JP4836512B2 (en) * | 2005-07-29 | 2011-12-14 | 東京エレクトロン株式会社 | Substrate lifting apparatus and substrate processing apparatus |
| CN100477147C (en) * | 2006-03-16 | 2009-04-08 | 东京毅力科创株式会社 | Substrate table and substrate processing apparatus |
| JP4597894B2 (en) | 2006-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | Substrate mounting table and substrate processing apparatus |
| JP5141707B2 (en) * | 2010-03-24 | 2013-02-13 | 株式会社安川電機 | SUPPORT MECHANISM AND SUPPORT METHOD FOR PROCESSED BODY AND CONVEYING SYSTEM HAVING THE SAME |
| KR101287831B1 (en) * | 2010-10-26 | 2013-07-18 | 주성엔지니어링(주) | Appratus for lifting substrate |
| KR102092150B1 (en) * | 2013-08-30 | 2020-03-23 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| JP6596362B2 (en) * | 2015-12-02 | 2019-10-23 | 東京エレクトロン株式会社 | A processing device for processing a workpiece in a decompressed space |
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| CN107546171A (en) | 2018-01-05 |
| JP2018006374A (en) | 2018-01-11 |
| JP6650841B2 (en) | 2020-02-19 |
| KR20180001495A (en) | 2018-01-04 |
| KR102002216B1 (en) | 2019-07-19 |
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