TW202200824A - 沉積磊晶材料之方法、使用該方法形成之結構、及用於執行該方法之系統 - Google Patents
沉積磊晶材料之方法、使用該方法形成之結構、及用於執行該方法之系統 Download PDFInfo
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Abstract
本發明揭示一種沉積一或多個磊晶材料層之方法、一種使用上述方法形成之裝置結構、及一種用於執行上述方法之系統。例示性方法包括以預塗材料塗佈反應室之表面、處理若干基材、並接著清潔反應室。
Description
本揭露大致上係關於氣相反應器及系統,並關於使用上述反應器及系統之方法。更具體地,本揭露係關於沉積磊晶材料之方法、用於沉積磊晶材料之系統、及使用上述方法及系統形成之結構。
氣相反應器(諸如化學氣相沉積(CVD)反應器)可用於各種應用,包括在基材表面上沉積及蝕刻材料。例如,氣相反應器可用以沉積基材上的磊晶層以形成半導體裝置、平板顯示裝置、光伏打裝置、微機電系統(MEMS)、及類似者。
典型的氣相磊晶反應器系統包括反應器,其包括反應室;一或多個前驅物及/或反應物氣體源,其等經流體耦合至反應室;一或多個載體及/或沖洗氣體源,其等經流體耦合至反應室;氣體注入系統,其輸送氣體(例如,(多個)前驅物/反應物氣體及/或(多個)載體/沖洗氣體)至反應室;基座,其固持及加熱基材;及排氣源,其經流體耦合至反應室。進一步地,磊晶反應器系統可包括一或多個加熱器(例如燈)及/或溫度測量裝置(例如高溫計),其(等)係在反應室外部。燈可用以加熱反應室內的區域。高溫計可用以測量反應室內之(例如基座及/或反應室壁的)溫度。
在磊晶沉積製程期間,磊晶材料層係沉積至或生長在基材表面上。此外,材料可沉積至反應室內之反應室壁、基座、及類似者上。沉積在反應室壁及基座上的材料可影響反應室內的熱及/或化學環境,其繼而可影響後續經沉積至基材表面上的材料之沉積(例如沉積率及/或均勻性)。進一步地,一旦材料沉積至反應室壁及/或基座上,材料可能會難以移除。因此,在各基材或沉積製程之後清潔反應室以從反應室內部移除殘餘物。
儘管此類製程針對某些應用運作良好,在各製程運行之後清潔反應室內部係耗時且昂貴的。此外,隨著形成在基材表面上之特徵大小減小,控制膜性質(諸如膜厚度及電阻率)逐漸變得重要。因此,所欲的係用於在基材表面上沉積磊晶材料之改善的系統及方法。
本揭露之各種實施例係關於用於在基材表面上沉積磊晶材料之改善的方法及系統,並關於使用上述方法及系統形成之結構。雖然在下文更詳細地討論本揭露之各種實施例應對先前系統及方法之缺點的方式,大致上,本揭露之各種實施例提供可用以使用具時間效益及/或成本效益之方式沉積磊晶材料之方法及系統。例示性方法可用以在不清潔反應室內部的情況下處理多個基材及/或執行多個製程,同時維持或甚至改善膜厚度、組成、及/或類似者在基材內及/或基材間的均勻性。
根據本揭露之例示性實施例,提供一種沉積磊晶材料層之方法。方法可用以在基材表面上形成複數個磊晶材料層。例示性方法包括以預塗材料塗佈反應室表面;在反應器系統之反應室內提供基材(例如在塗佈步驟之後);在基材之表面上沉積一或多個磊晶材料層;及在清潔反應室的步驟之前,重複在反應室內提供基材及在基材之表面上沉積磊晶材料層的步驟。例示性方法可進一步包括清潔反應室之步驟。例示性預塗材料包括矽。預塗材料可包括額外元素(諸如鍺)。根據本揭露之實例,預塗材料包括大於70%原子百分比的矽。根據本揭露之進一步的實例,將包括鹵素之前驅物提供至反應室。額外或替代地,蝕刻劑係在沉積磊晶材料層之步驟及/或以預塗材料塗佈反應室表面之步驟期間提供至反應室。蝕刻劑可包括例如鹵素。在清潔反應室之步驟之前,在反應室內提供基材之步驟可重複三或更多次、五或更多次、或10、15、25、或更多次。因此,上述方法的產出量與傳統的磊晶沉積方法相比可相對高,及/或與在基材上沉積磊晶材料相關聯的成本與使用傳統方法沉積磊晶材料相關聯的成本相比可相對低。
根據本揭露之進一步的實例,可控制反應室內之二或更多個溫度區之溫度。例如,可在以預塗材料塗佈反應室表面及在基材之表面上沉積磊晶材料層之步驟中的一或多者期間控制溫度。使用多個溫度區以控制反應室內的溫度可進一步促成控制在於基材之表面上沉積磊晶材料層之步驟期間所沉積之材料的膜厚度、組成、其他性質、及其均勻性。
根據本揭露之額外的例示性實施例,提供一種形成裝置結構之方法。例如,例示性裝置結構可包括矽、矽鍺、或包含矽的一或多個層、及包含矽鍺的一或多個層。舉實例而言,裝置結構可用以形成場效電晶體(諸如環繞式閘極裝置)。
根據本揭露之尚有額外的例示性實施例,提供一種用於執行方法及/或用於形成裝置結構之系統。
下文所提供之例示性實施例的描述僅係例示性且僅係意欲用於說明之目的;下列描述並非意欲限制本揭露或申請專利範圍之範疇。此外,詳述具有所述特徵之多個實施例不意欲排除具有額外特徵之其他實施例或納入所述特徵之不同組合的其他實施例。
本揭露大致上係關於用於沉積磊晶材料之方法及系統。例示性方法及系統可用以在裝置(諸如半導體裝置、平板顯示裝置、光伏打裝置、微機電系統(MEMS)、及類似者)製造期間處理基材(諸如半導體晶圓)。舉實例而言,本文中所述之例示性系統及方法可用以在基材表面上形成或生長磊晶層(例如單組分、雙組分、及/或摻雜半導體層)。例示性系統可進一步用以在若干(例如大於2、3、5、10、15、25或類似者)次製程或基材運行之後提供反應室內表面的清潔。
如本文中所使用,用語「前驅物(precursor)」及/或「反應物(reactant)」可指一或多個氣體/蒸氣,其(等)參與化學反應或由其衍生出參與反應的氣相物質。化學反應可發生在氣相中及/或在氣相與(例如基材或反應室之)表面及/或(例如基材或反應室之)表面上的物種之間。
如本文中所使用,「基材(substrate)」係指具有材料可沉積於其上之表面的任何材料。基材可包括塊材(諸如IV族(例如矽,諸如單晶矽)或其他半導體材料(諸如III至V族或II至VI族半導體材料)),或可包括上覆於塊材的一或多層。進一步地,基材可包括各種形貌,諸如形成在基材之一層的至少一部分之內或之上的溝槽、通孔、線、及類似者。根據本揭露之實例,基材包括包括結晶半導體材料之表面。
在本揭露中,「氣體(gas)」可包括在常溫及常壓(NTP)下為氣體之材料、汽化固體、及/或汽化液體,並可取決於上下文由單一氣體或氣體混合物構成。除了製程氣體以外的氣體(亦即,未通過氣體分配總成、其他氣體分配裝置、或類似者引入的氣體)可用於例如密封反應空間,並可包括密封氣體(諸如稀有氣體)。
用語「惰性氣體(inert gas)」可指不參與化學反應及/或不會在可察覺的程度上變為膜基質之一部分的氣體。例示性的惰性氣體包括氦、氬、及其等之任何組合。載體可係或可包括惰性氣體。稀釋氣體可係或可包括惰性氣體或氫。
如本文中所使用,用語「膜 (film)」及/或「層 (layer)」可指任何連續或不連續的結構及材料(諸如,藉由本文所揭示之方法沉積之材料)。例如,膜及/或層可包括二維材料、三維材料、奈米粒子,或甚至是部分或完整分子層、或部分或完整原子層或原子及/或分子團簇。膜或層可包含具有針孔的材料或層,其可係至少部分連續的。
如本文所使用,「結構(structure)」可係或可包括如本文所述之基材。結構可包括上覆於基材之一或多個層(諸如,根據本文所述之方法形成的一或多個層)。裝置部分可係或可包括結構。
如本文中所使用,用語「磊晶層(epitaxial layer)」可指在下伏實質單晶基材或層上之實質單晶層。
如本文中所使用,用語「化學氣相沉積(chemical vapor deposition)」可指任何製程,其中基材係暴露至一或多個氣相前驅物,其等在基材表面上起反應及/或分解以製造所欲沉積。
進一步地,在本揭露中,變數之任兩個數字可構成變數之可工作範圍,且所指示之任何範圍可包括或排除端點。額外地,所指示的變數之任何數值(不管該等數值是否以「約」來指示)可指精確值或近似值並包括等效值,且可指平均值、中間值、代表值、多數值或類似者。進一步地,在本揭露中,於一些實施例中,用語「包括(including)」、「由……構成(constituted by)」、及「具有(having)」係獨立地指「一般或廣泛地包含(typically or broadly comprising)」、「包含(comprising)」、「基本上由……組成(consisting essentially of)」、或「由……組成(consisting of)」。在本揭露中,於一些實施例中,任何已定義之意義不必然排除尋常及慣例意義。
現轉向圖式,圖1繪示根據本揭露之實例之例示性方法100。方法100可用以沉積磊晶材料層(例如在裝置結構形成期間)。
在所繪示之實例中,方法100包括塗佈反應室表面(步驟102)、在反應室內提供基材(步驟104)、在基材表面上沉積一或多個磊晶材料層(步驟106)、從反應室移除基材(步驟108)、清潔反應室(步驟110)、及針對額外基材重複步驟104至108(迴圈112)。
在步驟102期間,預塗材料係在反應室內沉積至表面上。例如,表面可包括反應室之一或多個壁的表面、基座之一或多個表面、進出反應室之各種入口或出口的表面、及類似者。舉實例而言,反應室內之表面包括至少一基座之頂表面。
欲沉積預塗材料,一或多個前驅物及/或反應物係提供至反應室。前驅物可依所欲地包括與欲沉積之磊晶材料共有的至少一元素。例如,當欲沉積至基材上之磊晶材料包括矽時,前驅物中之至少一者可包括矽。進一步地,當欲沉積至基材上之磊晶材料包括鍺時,前驅物中之至少一者可包括鍺。
用於在步驟102期間使用之例示性前驅物包括鹵化物(諸如鹵化矽)。在一些實施例中,例如,鹵化矽化合物可包括具有給定如下之通式的鹵化矽:Six
Wy
Hz
,其中「W」係選自由氟(F)、氯(Cl)、溴(Br)、及碘(I)組成之群組的鹵化物,「x」及「y」係大於零的整數,且「z」係大於或等於零的整數。在一些實施例中,鹵化矽前驅物可選自由下列組成之群組:氟化矽(例如SiF4
)、氯化矽(例如SiCl4
)、溴化矽(例如SiBr4
)、及碘化矽(例如SiI4
)。在一些實施例中,鹵化矽前驅物可包含四氯化矽(SiCl4
)。
在一些實施例中,前驅物可包含矽烷(諸如,例如矽烷(SiH4
)、二矽烷(Si2
H6
)、三矽烷(Si3
H8
)、四矽烷(Si4
H10
)、或具有實驗通式Six
H(2x+2)
之更高級矽烷)。
舉實例而言,前驅物可係或包括下列中之一或多者:四氯化矽(SiCl4
)、三氯矽烷(SiCl3
H)、二氯矽烷(SiCl2
H2
)、單氯矽烷(SiClH3
)、六氯二矽烷(HCDS)、八氯三矽烷(OCTS)、碘化矽、溴化矽;或胺基前驅物(諸如六(乙胺基)二矽烷(AHEAD)、及SiH[N(CH3
)2
]3
(3DMASi)、雙(二烷胺基)矽烷(諸如BDEAS(雙(二乙胺基)矽烷)));單(烷胺基)矽烷(諸如二異丙胺基矽烷);或氧基矽烷基前驅物(諸如四乙氧基矽烷Si(OC2
H5
)4
)。
在一些情況下,前驅物優先包括鹵素。咸認為包括鹵素之前驅物相對於沉積在反應室上可能優先導致沉積在基座上,其可為後續沉積在基材表面上之磊晶層提供較佳的沉積均勻性。
在一些情況下,可在步驟102期間將稀釋氣體(諸如氫)或惰性氣體提供至反應室。額外或替代地,可在步驟102期間將載體氣體(諸如惰性氣體)提供至反應室。
根據本揭露之進一步的實例,可在步驟102期間將蝕刻劑提供至反應室。蝕刻劑可從與前驅物相同的源容器提供至反應室或分開地提供至反應室。
例示性蝕刻劑包括鹵化物(諸如包含氟(F)、氯(Cl)、溴(Br)、及碘(I)中之一或多者之化合物)。舉實例而言,蝕刻劑可係或可包括氯化氫及/或一或多個鹵素氣體(諸如F2
、Cl2
、Br2
、及I2
)。類似於包括鹵素之前驅物的使用,咸認為相對於反應室壁,蝕刻劑之使用在步驟102期間導致基座上的較高沉積,其可為後續沉積在基材表面上之磊晶層提供較佳的沉積均勻性。
在步驟102期間,反應室內之(例如基座及/或反應室壁的)溫度可係約850 °C至約1050 °C、約850 °C至約950 °C、或約900 °C至約950 °C。反應室內的壓力可係約10 Torr至約1 ATM、約10至約500 Torr、或約15 Torr至約200 Torr。前驅物至反應室之流量率的範圍可係約50 sccm至約1000 sccm、約100 sccm至約900 sccm、或約200 sccm至約700 sccm。
步驟102期間所沉積之材料厚度可根據各種因素變化。舉實例而言,當磊晶材料包含矽時,基座上的材料層厚度可係約50至約5000埃、約50至約2000埃、或約0.5至約20微米。當磊晶材料包含鍺(例如矽鍺)時,基座上的材料層厚度可係約10至約5000埃、約10至約1000埃、約10至約500埃、約0.5微米至約10微米、或約0.5微米至約20微米。
在步驟104期間,一或多個基材係裝載至反應室中。在此步驟期間,反應室之(例如基座及/或反應室壁的)溫度可減小至約200 °C至約900 °C、約200 °C至約700 °C、約500 °C至約900 °C、或約500 °C至約650 °C。反應室內的壓力可係約10 Torr至約80 Torr、約10 Torr至約200 Torr、或約5 Torr至約600 Torr。
一旦將基材裝載至反應室中,可將反應室帶至沉積一或多個磊晶層之步驟106所欲的溫度及壓力。步驟104及/或106期間之反應室內的溫度可低於步驟102期間之反應室內的溫度。
在一些情況下,方法100可在步驟106之前包括焙烤步驟。在這些情況下,反應室內的溫度在焙烤步驟期間可係約600 °C至約1200 °C、約650 °C至約1000 °C、或約700 °C至約900 °C。反應室內之壓力在焙烤步驟期間可係約2 Torr至約1 ATM、約2 Torr至約400 Torr、或約2 Torr至約200 Torr。在步驟104及任何焙烤步驟之後,可將反應室(例如,反應室內之基座)帶至所欲的沉積溫度。
在步驟106期間,一或多個磊晶層係沉積至基材表面上。用以沉積磊晶材料之前驅物可包括半導體材料(諸如IV族、III至V族、及/或II至VI族半導體材料)。舉說明性實例而言,前驅物及磊晶材料可包括矽。
用於沉積磊晶矽之合適的矽前驅物包括上文提及之矽前驅物的任何者。舉實例而言,可使用二氯矽烷(DCS)、矽烷(SiH4
)、及/或二矽烷(SI2
H6
)作為反應物。
用於沉積包含鍺之磊晶層(例如鍺或矽鍺層)之合適的鍺前驅物包括鍺烷、二鍺烷、及類似者。
沉積溫度可係約350 °C至約950 °C、約350 °C至約800 °C、或約600 °C至約800 °C。反應室內的壓力在焙烤步驟期間可係約2 Torr至約1 ATM、約2 Torr至約400 Torr、或約2 Torr至約200 Torr。矽前驅物之流量率可係約10 sccm至約700 sccm、或10 sccm至約300 sccm;鍺前驅物之流量率可係約10 sccm至約990 sccm、約10 sccm至約220 sccm、或約10 sccm至約85 sccm;其等之任一者的流量率可具有或不具有載體氣體。
根據本揭露之實例,可在步驟106期間沉積矽及/或矽鍺(例如單層矽鍺)的一或多個(例如交替)層。根據這些實例,矽可係例如本質上經摻雜或包括摻雜物(諸如濃度約1至約40原子百分比的鍺、硼、砷、磷)。矽鍺層可包含大於60 at%的矽、大於90 at%的矽、或約18至約35或約20至約30原子百分比的鍺、及約70至約80或約65至約80原子百分比的矽。
許多磊晶材料層可變化。根據本揭露之實例,與約0至約8、或約0至約6、或約0至4個矽鍺磊晶材料層交替之約1至約8、或約1至約6、或約1至4、或約1至3個矽磊晶材料層可在步驟106期間沉積至基材表面上。
根據本揭露之其他實例,一或多個層可包括單層矽鍺。此類層可用以例如形成場效電晶體之通道區。
在步驟108期間,從反應室移除一或多個基材。在此步驟期間,例如,可允許反應室冷卻至約550至約650或約500至約800的溫度,並將其帶至基材傳遞所欲的壓力。
一旦從反應室移除(多個)基材,可重複步驟104至108若干次。例如,在方法100繼續進行至步驟110之前,迴圈112可重複1、2、3、4、5、6、8、10、12、15、25、50、75、或更多次。
在步驟110期間,使用蝕刻劑清潔反應室,以移除在步驟102及106期間沉積的材料。例示性蝕刻劑包括鹵化物(諸如包含氟(F)、氯(Cl)、溴(Br)、碘(I)、及類似者中之一或多者之化合物)。舉實例而言,蝕刻劑可係或可包括一或多個鹵素氣體(諸如氯化氫、F2
、Cl2
、Br2
、及I2
)。
步驟110期間之反應室內的溫度可係約800 °C至約1250 °C、約950 °C至約1200 °C、約950 °C至約1100 °C、或約850 °C至約1250 °C。
步驟110期間之反應室內的壓力可係約50 Torr至約1 ATM、約50 Torr至約600 Torr、或約200 Torr至約500 Torr。步驟110期間之蝕刻劑的流量率可係約12至約22標準升/公尺(SLM)或約0.5至約30 SLM。
圖2繪示根據本揭露之例示性實施例形成之裝置結構(有時簡單稱為結構)200。結構200包括基材202及形成為上覆於基材202之複數個磊晶層204至218。具體地,結構200包括複數個磊晶矽鍺層204、206、208、及210,其等與複數個矽層212、214、216、及218交替。磊晶層204至218可例如在方法100之步驟106期間形成。
如上文所提及,可在執行清潔反應室的步驟之前形成複數個結構(諸如結構200)。進一步地,與在各基材或步驟106之後執行清潔製程相比,使用本文中所述之技術改善膜厚度及組成之層內均勻性。進一步地,與在各基材或步驟106之後採用清潔之方法相比,使用本文中所述之技術改善基材間之組成及厚度均勻性。且,與傳統方法相比,改善了組成及厚度兩者在基材上(堆疊內)的層間均勻性。
使用典型沉積製程時,在薄膜於基材上或直接至基座上之沉積期間,可藉由高溫計偵測明顯的溫度振盪。振盪可與生長膜厚度相關,並可針對薄膜干涉使用菲涅爾方程式描述。藉由沉積如本文中所述之預塗,可針對磊晶生長製程個別地或共同地改善製程產出量、總熱預算、及前驅物消耗。
圖3繪示根據本揭露之進一步的實例之裝置結構(有時簡單稱為結構)300。結構300可用以形成環繞式閘極場效電晶體。結構200可用以藉由蝕刻磊晶矽層及移除磊晶矽鍺層來形成結構300。
結構300包括基材302、一或多個矽通道區或奈米線304、306、介電材料308、310、及導電材料312。可例如藉由根據方法100形成磊晶層來形成矽通道區或奈米線304、306。
圖6繪示根據本揭露之實例之另一裝置結構600。裝置結構600適於形成金氧半導體場效電晶體(MOSFET)(例如p-MOSFET)裝置。
在說明性實例中,裝置600包括基材602、源極區604、汲極區606、及SiGe通道區608,通道區經形成在源極區604與汲極區606之間。SiGe通道區608可根據本文中所述之方法(諸如方法100)形成在多個基材上。根據本揭露之實例,SiGe通道區608之厚度可係約40埃至約150埃、或約80埃至約120埃、或約40埃至約1000埃。
裝置結構600亦包括介電層610(諸如氧化矽及/或金屬氧化物)及導電材料612(諸如多晶矽及/或一或多個金屬層)。
圖4繪示依據本揭露之實例之例示性反應器系統400。反應器系統400可用於各種應用(諸如執行方法100、形成結構200、或類似者)。
在所繪示之實例中,反應器系統400包括可選之基材處置系統402、反應室404、氣體注入系統406、及設置於反應室404與基材處置系統402之間之可選的壁408。系統400亦可包括第一氣體源410、第二氣體源412、第三氣體源414、及第四氣體源416、排氣源426、控制器428、及基座或基材支撐430。雖然經繪示為具有四個氣體源410至416,反應器系統400可包括任何合適數目的氣體源。進一步地,反應器系統400可包括任何合適數目的反應室404,其等可各自耦合至氣體注入系統406。在反應器系統400包括多個反應室的情況下,各氣體注入系統可耦合至相同氣體源410至416或至不同氣體源。反應器系統400可包括任何合適數目的基材處置系統402。例如,反應器系統400之反應室404可係或可包括交叉流、冷壁磊晶反應室。
例如,氣體源410至416可包括一或多個前驅物、一或多個摻雜劑源、一或多個蝕刻劑之各種組合及氣體混合物(包括一或多個前驅物、摻雜劑源、及/或蝕刻劑與一或多個載體氣體之混合物)。
舉實例而言,第一氣體源410可包括蝕刻劑。第二氣體源412可包括前驅物。例示性蝕刻劑可包括鹵化物(諸如含氯氣體)。例示性含氯氣體包括選自由氯化氫、氯氣、及類似者組成之群組的一或多個氣體。
例示性前驅物包括含矽前驅物(諸如三氯矽烷、二氯矽烷、矽烷、二矽烷、三矽烷、四氯化矽、本文中所提及之其他矽前驅物、及類似者)。
在一些情況下,一或多個氣體源可包括摻雜劑。例示性摻雜劑源包括氣體,其等包括As、P、C、Ge、及B中之一或多者。舉實例而言,摻雜劑源可包括鍺烷、二硼烷、膦、胂、或三氯化磷。
一或多個源410至416可包括載體及/或稀釋氣體(諸如本文中所述之載體或稀釋氣體)。
基座或基材支座430可包括一或多個加熱器432以將基材434加熱至所欲溫度(諸如本文中所提及的溫度)。基座或基材支撐430亦可經組態以在處理期間旋轉(或不旋轉)。根據本揭露之實例,基座或基材支撐430以每分鐘約60至約2、約35至約2、或約35至約15轉數的速度旋轉。
反應器系統400亦可包括一或多個燈436至442以加熱基材434及/或反應室404的壁(例如壁444)。此外,反應器系統400可包括一或多個高溫計446以在反應室404內測量溫度。
如上文所提及,根據本揭露之各種實例,在處理基材(諸如基材434)之前,可使用例如本文中所述之方法步驟以預塗材料448塗佈反應室404。
排氣源426可包括一或多個真空泵。
控制器428包括電子電路系統及軟體以選擇性地操作閥、歧管、加熱器、泵、及其他包括在系統400中的組件。進行此類電路系統及組件之操作以從各別源410至416引入前驅物、反應物、及沖洗氣體。控制器428可控制氣體脈衝序列的時序、基材及/或反應室的溫度、反應室內的壓力、及各種其他操作,以提供系統400的合宜操作。控制器428可包括控制軟體以電氣或氣動地控制閥,以控制前驅物、反應物、及沖洗氣體進出反應室404的流動。控制器428可包括執行某些任務之模組(諸如軟體或硬體組件,例如FPGA或ASIC)。模組可有利地經組態以常駐在控制系統之可定址儲存媒體上,並經組態以執行一或多個製程。
在反應器系統400之操作期間,基材434係從例如基材處置系統402傳遞至反應室404。一旦(多個)基材434經傳遞至反應室404,來自氣體源410至416之一或多個氣體即經由氣體注入系統406引入反應室404中。氣體注入系統406可用以在基材處理期間計量及控制來自氣體源410至416之一或多個氣體的氣體流動,並提供此類(多個)氣體的所欲流動至反應室404內的多個位點。
圖5繪示根據本揭露之實例之另一反應器系統500。反應器500可相同或類似於反應器系統400。
在所繪示之實例中,反應器系統500包括反應室502、加熱器504至522、基座524、加熱元件526、溫度感測器528至532(例如熱耦或高溫計)、及溫度感測器534至538(例如熱耦或高溫計)。
反應室502可相同或類似於反應室404。
例如,加熱器504至522可係或可包括(例如紅外)加熱燈。如所繪示,燈504至520可在第一方向上且一或多個燈522可在(例如實質上垂直的)第二方向上。進一步地,加熱器504至522可分段成一或多個加熱區。例如,加熱器504、506可在第一(例如前)區中;加熱器508至516及可選的加熱器522可在第二(例如,中間,亦即,中心區)中;且加熱器518、520可在第三(例如後)區中。各區可包括一或多個加熱器,且不一定受限於所繪示之組態。舉實例而言,各區可包括從約1至約24或約2至約16個加熱器。根據本揭露之實施例,各區內的溫度可藉由測量溫度(例如,使用一或多個溫度感測器534至538)及使用控制器(諸如控制器428)而獨立地控制。進一步地,基座524上或嵌入基座內的另一加熱元件526可用以控制基材溫度。加熱元件526可經獨立地控制或連同一或多個區進行控制。例如,可在方法100之一或多個步驟期間使用此類獨立溫度控制。根據具體實例,反應器系統可包括約1至約24或約2至約16個線性燈(例如在區的一或多者中)及一或多個區中的一或多個點燈。例如,線性燈可係矽控整流器(SCR)線性燈。例如,各線性燈可展現約10,000 W之最大輸出。點燈可各自由例如四個個別圓形點形成,並可位於例如反應室下方。各圓形點的最大功率可係約1000至2000W。
根據本揭露之實例(諸如矽鍺之沉積),例如,在預塗沉積期間及/或在磊晶層沉積製程期間,至少兩個或至少三個溫度區係經獨立地控制。舉實例而言,可將前(例如最接近氣體入口)溫度區控制在高於中間溫度區的溫度(例如多10 °C或多或約25 °C),中間溫度區可高於後溫度區(例如,較目標中間區溫度少10 °C或少或約25 °C)。
雖然本文中提出本揭露之例示性實施例,應理解本揭露並未因此受限。例如,雖然連同各種特定組態描述反應器系統,本揭露不一定受限於這些實例。在不偏離本揭露之精神及範疇的情況下,可對本文提出的系統及方法作出各種修改、變化、及增強。
本揭露之主題包括各種系統、組件、及組態、及本文所揭示之其他特徵、功能、動作、及/或性質的所有新式且非顯而易見的組合及子組合、以及其任何及所有等同物。
100:方法
102:步驟
104:步驟
106:步驟
108:步驟
110:步驟
112:迴圈
200:裝置結構/結構
202:基材
204:磊晶層/磊晶矽鍺層
206:磊晶層/磊晶矽鍺層
208:磊晶層/磊晶矽鍺層
210:磊晶層/磊晶矽鍺層
212:磊晶層/矽層
214:磊晶層/矽層
216:磊晶層/矽層
218:磊晶層/矽層
300:裝置結構/結構
302:基材
304:矽通道區/奈米線
306:矽通道區/奈米線
308:介電材料
310:介電材料
312:導電材料
400:反應器系統
402:基材處置系統
404:反應室
406:氣體注入系統
408:壁
410:氣體源
412:氣體源
414:氣體源
416:氣體源
426:排氣源
428:控制器
430:基座/基材支撐
432:加熱器
434:基材
436:燈
438:燈
440:燈
442:燈
444:壁
446:高溫計
448:預塗材料
500:反應器系統
502:反應室
504:燈/加熱器
506:燈/加熱器
508:燈/加熱器
510:燈/加熱器
512:燈/加熱器
514:燈/加熱器
516:燈/加熱器
518:燈/加熱器
520:燈/加熱器
522:加熱器
524:基座
526:加熱元件
528:溫度感測器
530:溫度感測器
532:溫度感測器
534:溫度感測器
536:溫度感測器
538:溫度感測器
600:裝置結構
602:基材
604:源極區
606:汲極區
608:SiGe通道區
610:介電層
612:導電材料
當結合下列說明圖式思考時,可藉由參照實施方式及申請專利範圍而獲得對本揭露之例示性實施例的更完整理解。
圖1繪示根據本揭露之至少一例示性實施例之方法。
圖2示意地繪示根據本揭露之至少一例示性實施例形成之裝置結構。
圖3示意地繪示根據本揭露之至少一例示性實施例形成之另一裝置結構。
圖4示意地繪示根據本揭露之至少一例示性實施例之反應器系統。
圖5繪示根據本揭露之實例之另一反應器系統。
圖6繪示根據本揭露之至少一例示性實施例形成之另一裝置結構。
將理解,圖式中之元件係為了簡明及清楚起見而繪示且不必然按比例繪製。例如,可相對於其他元件誇大圖式中之一些元件的尺寸以幫助提升對本揭示之已說明實施例的了解。
100:方法
102:步驟
104:步驟
106:步驟
108:步驟
110:步驟
112:迴圈
Claims (22)
- 一種沉積磊晶材料層之方法,該方法包含下列步驟: 以一預塗材料塗佈一反應室之一表面; 在該塗佈步驟之後,於一反應器系統之一反應室內提供一基材; 在該基材之一表面上沉積一磊晶材料層;及 在清潔該反應室的一步驟之前,重複該等在一反應室內提供一基材及在該基材之該表面上沉積一磊晶材料層的步驟。
- 如請求項1所述之方法,其進一步包含該在該重複步驟之後清潔該反應室的步驟,該清潔步驟包含移除該預塗材料之至少一部分的一步驟。
- 如請求項1所述之方法,其中該預塗材料包含矽。
- 如請求項3所述之方法,其中該預塗材料包含大於70原子百分比的矽。
- 如請求項1所述之方法,其中該預塗材料包含矽鍺。
- 如請求項1所述之方法,其中該在該基材之該表面上沉積該磊晶材料層之步驟期間,提供包含一鹵素之一前驅物至該反應室。
- 如請求項1所述之方法,其中該在該基材之該表面上沉積該磊晶材料層之步驟期間,提供一蝕刻劑至該反應室。
- 如請求項7所述之方法,其中該蝕刻劑包含一鹵素。
- 如請求項1所述之方法,其中該在該基材之該表面上沉積該磊晶材料層之步驟期間,提供包含鍺烷及二鍺烷中之一或多者之一前驅物至該反應室。
- 如請求項1所述之方法,其中在該清潔該反應室的步驟之前,該在一反應室內提供一基材的步驟係重複三或更多次。
- 如請求項1所述之方法,其中在一清潔該反應室的步驟之前,該在一反應室內提供一基材的步驟係重複五或更多次。
- 如請求項1所述之方法,其中該在該基材之一表面上沉積一磊晶材料層的步驟期間之該反應室內的一溫度係約350 °C至約950 °C、約350 °C至約800 °C、或約600 °C至約800 °C。
- 如請求項2所述之方法,其中該清潔步驟期間之該反應室內的一溫度係約850 °C至約1250 °C、約950 °C至約1200 °C、或約950 °C至約1100 °C。
- 如請求項1所述之方法,其中該預塗材料的一厚度係介於約0.5與約20微米之間、或約50至約2000埃之間、或約50至約5000埃之間。
- 如請求項1所述之方法,其中該預塗材料的一厚度係介於約10與約5000埃之間、或約10至約1000埃之間、或約10至約500埃之間、或約0.5微米至約20微米之間。
- 一種形成裝置結構之方法,其包含如請求項1所述之方法。
- 如請求項16所述之方法,其中該裝置結構包括一或多個包含矽的層及一或多個包含矽鍺的層。
- 如請求項17所述之方法,其中該裝置結構包括複數個包含矽的層及複數個包含矽鍺的層。
- 如請求項16所述之方法,其中該裝置結構係用以形成一環繞式閘極裝置。
- 一種裝置結構,其係如請求項1所述之方法所形成。
- 一種系統,其係用於執行如請求項1所述之方法。
- 一種沉積磊晶材料層之方法,該方法包含下列步驟: 以一預塗材料塗佈一反應室之一表面; 在該塗佈步驟之後,於一反應器系統之一反應室內提供一基材; 在該基材之一表面上沉積一磊晶材料層;及 在一清潔該反應室的步驟之前,重複該等在一反應室內提供一基材及在該基材之該表面上沉積一磊晶材料層的步驟, 其中在該沉積步驟期間,該反應室內之二或更多個區的溫度係經獨立地控制。
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- 2021-03-04 KR KR1020210028562A patent/KR20210117163A/ko active Search and Examination
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