TW202137449A - 封裝件及其製造方法 - Google Patents

封裝件及其製造方法 Download PDF

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TW202137449A
TW202137449A TW110108470A TW110108470A TW202137449A TW 202137449 A TW202137449 A TW 202137449A TW 110108470 A TW110108470 A TW 110108470A TW 110108470 A TW110108470 A TW 110108470A TW 202137449 A TW202137449 A TW 202137449A
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Taiwan
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reinforcing sheet
package
redistribution structure
reinforcing
redistribution
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TW110108470A
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TWI773178B (zh
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許佳桂
游明志
林柏堯
陳碩懋
許峯誠
鄭心圃
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台灣積體電路製造股份有限公司
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Abstract

一種封裝件的製造方法，包括：形成重分佈結構。前述重分佈結構的形成製程包括：在載體上方形成複數個介電層；形成複數個重分佈線，延伸至前述介電層中；以及在前述載體上方形成補強片。此方法更包括將第一封裝元件結合至前述重分佈結構。前述第一封裝元件包括周邊區域，前述周邊區域與前述補強片的一部分重疊。從前述載體使前述重分佈結構和前述第一封裝元件脫離。

Description

封裝件及其製造方法
本揭露實施例係有關於一種封裝件及其製造方法，特別是有關於一種包括補強片的封裝件及其製造方法。
隨著半導體技術的發展，半導體晶片/晶粒變得愈來愈小。同時，需要將更多功能整合到半導體晶粒中。因此，半導體晶粒需要愈來愈多的輸入/輸出(Input/Output；I/O)墊封裝到更小的區域中，且I/O墊的密度隨著時間而迅速地增加。如此一來，半導體晶粒的封裝變得更加困難，這對封裝的良率有不利的影響。
在傳統封裝技術中，在晶圓被封裝之前，會從晶圓切割出晶粒。此種封裝技術的一個優勢是可以形成扇出型封裝，這表示晶粒上的I/O墊可重新分配到比晶粒更大的面積，故也可增加封裝在晶粒表面上的I/O墊的數量。此封裝技術的另一個優勢是，將「已知良好的晶粒」進行包裝，且拋棄有缺陷的晶粒。因此，不會在有缺陷的晶粒上耗費成本和精力。在封裝中，形成多個介電層和多個重分佈線。重分佈線電性連接到晶粒。
本揭露實施例提供一種封裝件的製造方法，包括：形成重分佈結構。形成重分佈結構包括：在載體上方形成複數個介電層；形成複數個重分佈線，延伸至前述介電層中；以及在前述載體上方形成補強片。此方法更包括將第一封裝元件結合至前述重分佈結構。前述第一封裝元件包括周邊區域，前述周邊區域與前述補強片的一部分重疊。從前述載體使前述重分佈結構和前述第一封裝元件脫離。
本揭露實施例提供一種封裝件，包括：重分佈結構、第一封裝元件以及底膠。重分佈結構包括：複數個介電層、複數個重分佈線以及補強片。前述重分佈線延伸至前述介電層中。前述補強片與前述介電層重疊，其中前述補強片包括金屬材料。第一封裝元件位於前述重分佈結構上方且結合至前述重分佈結構。底膠位於前述重分佈結構和前述第一封裝元件之間，其中前述底膠接觸前述補強片。
本揭露實施例提供一種封裝件，包括：重分佈結構以及封裝元件。重分佈結構包括：複數個介電層、複數個重分佈線以及補強片。前述重分佈線延伸至前述介電層中。前述補強片接觸前述介電層的其中一者，其中前述補強片是電性浮接的。封裝元件結合至前述重分佈結構，其中前述補強片包括第一部分，與前述封裝元件的角落部分重疊。
以下的揭露內容提供許多不同的實施例或範例以實施本揭露實施例的不同特徵。以下敘述構件及配置的特定範例，以簡化本揭露實施例的說明。當然，這些特定的範例僅為示範並非用以限定本揭露實施例。舉例而言，在以下的敘述中提及第一特徵形成於第二特徵上或上方，即表示其可包括第一特徵與第二特徵是直接接觸的實施例，亦可包括有附加特徵形成於第一特徵與第二特徵之間，而使第一特徵與第二特徵可能未直接接觸的實施例。另外，本揭露可在不同範例中重複使用參考標號及/或字母。此重複是為了簡潔且明確的目的，其本身並不表示所述各種實施例及/或構造之間具有關聯性。
此外，在此可使用與空間相關用詞。例如「底下」、「下方」、「較低的」、「上方」、「較高的」及類似的用詞，以便於描述圖式中繪示的一個元件或特徵與另一個(些)元件或特徵之間的關係。除了在圖式中繪示的方位外，這些空間相關用詞意欲包括使用中或操作中的裝置之不同方位。裝置可能被轉向不同方位(旋轉90度或其他方位)，且在此使用的空間相關詞也可依此做同樣的解釋。
根據一些實施例，提供了一種包括補強片的包裝及其形成方法。根據本揭露的一些實施例，補強片由金屬形成，且具有高密度。補強片位於遭受高應力的區域中，例如在封裝中的晶粒周邊正下方的區域中。本文討論的實施例將提供範例以使得能製造或使用本揭露的主題，且本技術領域中具有通常知識者將容易理解在不同實施例的所及範圍內可進行的修改。在各種視圖和說明性實施例中，相似的參考標號用於指示相似的元件。儘管方法實施例可被敘述為以特定順序執行，但是可用任何合理的順序來執行其他方法實施例。
第1至14圖繪示根據本揭露的一些實施例之形成封裝件的中間階段的剖視圖。對應的製程也示意性地反映在第23圖所示的製程流程圖中。
第1圖繪示載體20和形成在載體20上的離型膜22。根據一些實施例，載體20可以是玻璃載體。載體20可以具有圓形的俯視圖形狀。離型膜22可以由光熱轉換（Light-To-Heat-Conversion；LTHC）材料形成。此材料可以被分解，使得在後續的步驟中形成的上層結構可以從載體20釋放。根據本揭露一些實施例，離型膜22由基於環氧的熱釋放材料形成。離型膜22可以塗布在載體20上。離型膜22的頂面是水平且平坦的。
介電層24形成在離型膜22上。相應的製程被繪示為第23圖所示的製程流程200中的製程202。根據本揭露的一些實施例，介電層24由聚合物形成，可由聚醯亞胺、聚苯并(口咢)唑（Polybenzoxazole；PBO）、苯環丁烯（benzocyclobutene；BCB）或其他類似的材料形成或包括前述材料。介電層24也可由非聚合物（無機材料）形成或包括非聚合物（無機材料），此非聚合物可以是氧化矽、氮化矽、氮氧化矽或其他類似的材料。
參照第2圖，在介電層24上方形成重分佈線（Redistribution Lines；RDL）26（以及可能形成的補強片27）。相應的製程被繪示為第23圖所示的製程流程200中的製程204。形成重分佈線26可包括：在介電層24上方形成種子層（未圖示），在種子層上方形成例如光阻的圖案化遮罩（未圖示），接著在暴露的種子層上執行金屬電鍍製程以電鍍金屬材料。然後移除圖案化遮罩和由圖案化遮罩覆蓋的種子層的部分，留下如第2圖中的重分佈線26。根據本揭露的一些實施例，種子層包括鈦層和在鈦層上方的銅層。可使用例如物理氣相沉積（Physical Vapor Deposition；PVD）形成種子層。可使用例如電化學電鍍來執行電鍍。電鍍的金屬材料可包括金屬或包括銅、鋁、鎢或其他類似材料的金屬合金。 重分佈線26可包括用於設置凸塊底層金屬（Under-bump Metallurgies；UBMs）的金屬墊以及用於傳送電訊號、電源等的金屬線。
根據一些實施例，在形成重分佈線26的同時，使用與形成重分佈線26相同的製程來形成補強片27。在後續段落中將說明補強片27的細節。根據替代的實施例，可不形成補強片27。
參照第3圖，在重分佈線26上形成介電層28。相應的製程被繪示為第23圖所示的製程流程200中的製程206。介電層28的底面與重分佈線26的頂面、補強片27的頂面和介電層24的頂面接觸。根據本揭露的一些實施例，介電層28由聚合物形成，此聚合物可以是聚醯亞胺、PBO、BCB或其他類似的材料。根據本揭露的替代實施例，介電層28由非聚合物（無機）材料形成，其可包括氧化矽、氮化矽或其他類似的材料。接著，將介電層28圖案化以在介電層28中形成開口30。因此，重分佈線26的一些部分會透過介電層28中的開口30被暴露。
接下來，參照第4圖，形成重分佈線32（以及可能形成的補強片33）以連接到重分佈線26。相應的製程在第23圖所示的製程流程200中繪示為製程208。重分佈線32包括在介電層28上方形成的金屬線。重分佈線32亦包括延伸到介電層28的開口30中的通孔。重分佈線32亦以電鍍製程形成，其中每個重分佈線32包括種子層（未圖示）和在種子層上方電鍍的金屬材料。種子層和電鍍金屬材料的材料可分別選自與重分佈線26中的種子層和電鍍金屬材料相同的候選材料。
根據一些實施例，在形成重分佈線32的同時，以用於形成重分佈線32的相同過程形成補強片33。在後續段落中將說明補強片33的細節。根據替代實施例，可不形成補強片33。
參照第5圖，在重分佈線32和介電層28上方形成介電層34。相應的製程在第23圖所示的製程流程200中繪示為製程210。介電層34由聚合物形成，此聚合物可以是聚醯亞胺、PBO、BCB或其他類似的材料。根據本揭露的替代實施例，介電層34可以由無機材料形成，此無機材料可以選自氧化矽、氮化矽、碳氮化矽、氮氧化矽或其他類似的材料。
第6圖繪示重分佈線36（電性連接至重分佈線32）和對應的補強片37的形成。相應的製程在第23圖所示的製程流程200中繪示為製程212。重分佈線36可採用與形成重分佈線32的方法和材料相似的方法和材料。應理解的是，儘管在說明性的範例實施例中，說明了三個介電層24、28和34以及在其中形成的各個重分佈線26、32和36，但是根據佈線需求和使用聚合物來緩衝應力的需求，可採用更少或更多的介電層和重分佈線層。舉例而言，可設有兩個介電層或四個、五個或更多介電層以及對應的重分佈線層。
根據一些實施例，在形成重分佈線36的同時，以與形成重分佈線32相同的製程來形成補強片37。根據替代實施例，可不形成補強片37。將在後續的段落中說明補強片37的細節。特徵之其中一者繪示為36/37，以指示其可用於電氣佈線和機械加強中的一或兩者。舉例而言，重分佈線/補強片36/37可用於佈線而非補強，可用於補強而非佈線，或者同時用於佈線和補強，以下將在後續的段落中說明。
參照第7圖，在重分佈線36和介電層34上方形成介電層38。相應的製程在第23圖所示的製程流程200中繪示為製程214。介電層38由聚合物形成，此聚合物可以是聚醯亞胺、PBO、BCB或其他類似的材料。根據本揭露的替代實施例，介電層38由無機材料形成，此無機材料可以選自氧化矽、氮化矽、碳氮化矽、氧氮化矽或其他類似的材料。
參照第8圖，在介電層38中形成開口40以暴露出下方的重分佈線36。可以或可以不暴露出補強片37（如果形成的話）。根據本揭露的一些實施例，介電層38由例如聚醯亞胺或PBO的光敏材料形成。因此，開口40的形成可包括使用微影遮罩在介電層38上執行曝光製程，此微影遮罩包括不透明和透明的圖案。接著，對介電層38進行顯影以形成開口40。
參照第9圖，形成了凸塊底層金屬42和補強片44。 凸塊底層金屬42也可具有佈線功能，因此也被稱為重分佈線42。相應的製程在第23圖所示的製程流程200中繪示為製程216。凸塊底層金屬42和補強片44的形成製程可包括在介電層38上形成毯覆金屬種子層（未單獨繪示），在金屬種子層上方形成例如光阻的圖案化遮罩（未圖示），然後在暴露的金屬種子層上執行金屬電鍍製程。接著，移除圖案化遮罩和被圖案化遮罩覆蓋的金屬種子層的部分，留下凸塊底層金屬42和補強片44。根據本揭露的一些實施例，金屬種子層包括鈦層和位於鈦層上的銅層，其中鈦種子層和銅種子層是形成為共形層，此共形層包括延伸至開口40中的第一部分和位於介電層38上方的第二部分。可使用例如物理氣相沉積（PVD）形成金屬種子層。可使用例如電化學電鍍來執行電鍍。由於凸塊底層金屬42和補強片44可在共同的製程中來形成，因此凸塊底層金屬42和補強片44可具有相同的結構且由相同的材料形成。根據替代實施例，凸塊底層金屬42和補強片44可在分開的製程中來形成，且因此可由選自鈦、銅、鎳、鈀或其他類似材料中的不同材料或相同材料來形成。
根據一些實施例，所有的補強片44都位在介電層38上，且在介電層38中不具有將補強片44連接至介電層38中下方的導電特徵的通孔。根據本揭露的替代實施例，一些或所有的補強片44通過通孔46電性連接且物理連接至下方的重分佈線36及/或補強片37。因此通孔46以虛線繪示以表示可形成或可不形成通孔46。補強片44和通孔46（如果形成的話）以共同的形成製程來形成。在整篇說明書中，離型膜22上方的特徵（包括重分佈線、補強片和介電層）統稱為重分佈結構48。
接下來，將封裝元件52A和52B結合到重分佈結構48，如第10圖所示。相應的製程在第23圖所示的製程流程200中繪示為製程218。根據本揭露的一些實施例，封裝元件52A和52B包括邏輯晶粒、記憶體晶粒、輸入輸出（IO）晶粒、晶粒堆疊、封裝或其他裝置的任意組合。亦應理解的是，儘管繪示兩個封裝元件，但是可設有多組封裝元件，其中每組包括結合到重分佈結構48的一個、三個、四個、五個或更多個封裝元件。邏輯晶粒可以是中央處理單元（Central Processing Unit；CPU）晶粒、微控制單元（Micro Control Unit；MCU）晶粒、基帶（BaseBand；BB）晶粒、應用處理器（Application processor；AP）晶粒等。記憶體晶粒可以包括動態隨機存取記憶體（Dynamic Random Access Memory；DRAM）晶粒、靜態隨機存取記憶體（Static Random Access Memory；SRAM）晶粒等。晶粒堆疊可包括記憶體晶粒堆疊，其可以是高帶寬記憶體（High-Bandwidth Memory；HBM）堆疊。封裝元件52A和52B可以彼此相同或彼此不同。封裝元件52A和52B也被統稱為封裝元件52。
封裝元件52A和52B的結合可透過焊料來結合，其中焊料區域53將凸塊底層金屬42連接到封裝元件52A和52B中的金屬墊（或微凸塊）50。根據替代實施例，可使用其他類型的結合方法，例如混合結合、直接金屬-金屬結合或其他類似的方法。
第11圖繪示分配底膠54和封裝膠56進行封裝。相應的製程在第23圖所示的製程流程200中繪示為製程220。根據一些實施例，首先將底膠54分配到封裝元件52和重新分配結構48之間的間隙中。可在相鄰的封裝元件52之間分配或不分配底膠54。封裝膠56可以由模塑料、模製底膠、環氧樹脂、樹脂等形成或包括前述材料。底膠54和封裝膠56以可流動形式分配，然後進行固化。當封裝膠56由模塑料形成時，封裝膠56可包括可以是聚合物、樹脂、環氧樹脂或其他類似材料的基材以及在此基材中的填料粒子。填料粒子可以是SiO2 、Al2 O3 、二氧化矽或其他類似材料的介電粒子，且可具有球形。此外，球形填料粒子可具有多種不同的直徑。可執行例如化學機械研磨（Chemical Mechanical Polish；CMP）製程或機械研磨製程的平坦化製程，以使封裝元件52的頂面與封裝膠56的頂面齊平。在整個說明書中，離型膜22上方的特徵（包括重分佈結構48、封裝元件52、底膠54和封裝膠56）被統稱為重組晶圓100。
接下來，將重組晶圓100從載體20脫離。相應的製程在第23圖所示的製程流程200中繪示為製程222。根據一些實施例，雷射束掃描通過載體20投影至離型膜22，離型膜22吸收雷射束的能量且分解。因此，可以從離型膜22上提起載體20，且將重組晶圓100從載體20上脫離（拆卸）。所得的重組晶圓100在第12圖中繪示，且相較於第11圖上下顛倒地顯示。
進一步參照第12圖，在介電層24中形成開口58。根據本揭露的一些實施例，開口58的形成包括雷射鑽孔製程、蝕刻製程或其他類似的製程。重分佈線26中的金屬墊會暴露於開口58。
參照第13圖，形成凸塊底層金屬60和補強片62。相應的製程在第23圖所示的製程流程200中繪示為製程224。凸塊底層金屬60和補強片62的形成製程可包括在介電層24上形成金屬種子層（未圖示），形成圖案化遮罩（未圖示，例如在金屬種子層上方的光阻），接著在暴露的種子層上執行金屬電鍍製程。隨後，移除圖案化遮罩和被圖案化遮罩覆蓋的金屬種子層的部分，留下凸塊底層金屬60和補強片62。根據本揭露的一些實施例，金屬種子層包括鈦層和位於鈦層上方的銅層，其中鈦種子層形成為共形層，此共形層包括延伸到開口58中的第一部分和位於介電層24上方的第二部分。可以使用例如物理氣相沉積來形成金屬種子層。可以使用例如電化學電鍍來執行電鍍。由於凸塊底層金屬60和補強片62可以在共同的製程中形成，故凸塊底層金屬60和補強片62可具有相同的結構且由相同的材料形成。根據替代的實施例，凸塊底層金屬60和補強片62可在分開的製程中形成，且因此可由不同的材料或相同的材料形成。
接下來，在凸塊底層金屬60上形成焊料區域64。相應的製程也在第23圖所示的製程流程200中繪示為製程224。根據一些實施例，焊料區域64的形成可包括放置焊料球。在凸塊底層金屬60上，然後回流所放置的焊料球。根據替代實施例，焊料區域64的形成製程可包括在凸塊底層金屬60上電鍍焊料區域，然後使電鍍的焊料區域回流。接著，可執行分離製程以將重組晶圓100切割成彼此相同的複數個封裝件100'。
第14圖繪示封裝件100'與封裝元件66的結合，進而形成了封裝件70。根據本揭露的一些實施例，封裝元件66是或包括封裝基板、中介層、封裝件或其他類似的元件。底膠68可被分配到封裝件100'和封裝元件66之間的間隙中。因此，補強片62可與底膠68接觸。
第16A、16B、16C、16D、16E、16F和16G圖繪示一些範例補強片27、33、37、44和62的平面圖。在後續的段落中，補強片27、33、37、44和62單獨或共同地表示為補強片74。因此，所示的補強片被標記為74以表示補強片27、33、37、44和62的任一者可以採用這些圖案。第16A圖繪示矩形的補強片74，補強片74是實心的且不具有通孔。第16B圖繪示圓形的補強片，其是實心的且不具有通孔。第16C圖繪示由蛇形線形成的補強片74。第16D圖繪示具有通孔72的矩形補強片。第16E圖繪示由網格形成的補強片，其包括水平線和與水平線交叉的垂直線。前述網格也可以被視為具有多個通孔的金屬板，且前述通孔形成陣列。第16F圖繪示橢圓形補強片，其是實心的且不具有通孔。第16G圖繪示具有不規則形狀的補強片。應理解的是，所示的補強片是範例，且可透過組合此些範例中的特徵來形成更多種的補強片，只要此些特徵是適用的即可。舉例而言，通孔72（第16D圖）可以形成在第16B、16F和16G圖或其他圖式所示的任何補強片74中。而且，具有網格圖案的補強片也可以具有第16B、16F和16G圖所示的外部輪廓75。
為了保持補強片74具有足夠的強度以補強結構，補強片74被設計成具有足夠的尺寸。舉例而言，第16A、16C、16D、16E、16F和16G圖中的長度L和寬度W以及第16B圖中的直徑D1可以大於約500μm，且可介於約500μm與約10000μm之間的範圍內。此外，在由虛線示出的輪廓75所定義的區域中，金屬的總密度要夠高，其中金屬密度是輪廓75中的金屬總面積與輪廓75內的總面積之比。舉例而言，金屬密度可大於約70％，且可介於約70％至100％之間（當補強片為固體時）。否則，如果補強片74太薄及/或金屬密度太低，則在應力下，補強片74將容易變形，且不具備足夠的強度來補強封裝件。
再次參照第14圖，補強片27、33、37、44和62用於加強封裝件100'。舉例而言，封裝元件52結合到重分佈線結構48，且封裝元件52的熱膨脹係數（Coefficient of Thermal Expansion；CTE）和重分佈線結構48的熱膨脹係數之間存在顯著差異。這導致在靠近封裝元件52的周邊區域和相鄰封裝元件52之間的間隙的區域中產生很大的應力。舉例而言，在第14圖所示的範例中，在封裝元件52A和52B之間的間隙正下方設有一些補強片27、33、37、44A和62A。這些補強片也可在封裝元件52A及/或52B的周邊區域正下方延伸。而且，在封裝元件52A及/或52B的外圍區域的正下方設有一些補強片（例如補強片44B和62B）。
第17至19圖繪示一些補強片74（包括補強片74A、74B和74C）的平面圖，且任何補強片74都可代表補強片27、33、37、44和62的任意組合中的任一者。如第17圖所示，補強片74A設置在封裝元件52A和52B的角落（和下方）。為了具有足夠的補強能力，補強片74A的長度L1和寬度W1可以大於約500μm，且可介於約500μm和約10,000μm之間的範圍內。此外，封裝元件52A、52B與補強片74以足夠的面積重疊。舉例而言，重疊長度L2和重疊寬度W2可大於約200μm。非重疊長度L2’和非重疊寬度W2’也可大於約200μm，使得補強片74可擴展到夠遠以向周遭應力最高的區域提供增強力。
補強片74B是靠近封裝元件52A和52B之間的間隙設置。根據一些實施例，補強片74B在位於封裝元件52A和52B之間的間隙正下方的整個區域中擴展，且可在封裝元件52A和52B中的一者或兩者正下方延伸。因此，補強片74的寬度W3大於封裝元件52A和52B之間的間隙G。此外，補強片74的重疊寬度W4可大於約200μm，且可介於約200μm和約500μm之間的範圍內。補強片74的長度L3可大於封裝元件52A和52B的長度。可從第17圖所示的參考截面14-14獲得第14圖所示的參考截面。
第18圖繪示根據其他實施例的補強片74的平面圖。補強片74可圍繞封裝元件52A和52B中的每一者的周邊區域形成一或複數個環。當封裝元件52不止一個時，相鄰的補強片環可彼此接合，使得接合區域可跨過相鄰封裝元件52之間的整個間隙。另外，補強片環的每一者可包括位於對應封裝元件52的周邊區域正下方的內部和不與對應封裝元件52重疊的外部。因此，前述外部也可以是在平面中環繞對應封裝元件52的環。根據一些實施例，重疊寬度W4（也是補強片環的內部的寬度）可大於約200μm。
第19圖繪示根據其他實施例的包括補強片74的封裝件70的平面圖。封裝件70包括一些位於外圍較小的封裝元件52C，其對準於環繞較大的封裝元件52A和52B的環。高應力更可能在較大的封裝元件52A和52B的周邊區域周圍發生，而不太可能在較小的封裝元件52C的周邊區域周圍發生。因此，補強片74可形成以靠近較大的封裝元件52A和52B的周邊區域，且可以或者可不形成以靠近較小的封裝元件52C的周邊區域。舉例而言，如第19圖所示，補強片74形成在封裝元件52A和52B周圍且可在封裝元件52A和52B下方延伸。補強片74可以或可不在較小的封裝元件52C的正下方延伸。
再次參照第14圖，補強片27、33、37、44和62可以是電性浮接的。根據一些實施例，補強片27、33、37、44和62的每一者可以形成為分散且隔離的部件，而未設有通孔接合至補強片。因此，每個對應的補強片27、33、37、44和62被完全包覆在介電材料中。根據替代實施例，一些相鄰的補強片可與上方的及/或下方的補強片（透過通孔）接合以形成接合結構，進而更進一步增強補強能力。接合結構仍可以是電性浮接的，且可被完全包覆在介電材料中。舉例而言，如第14圖所示，當形成通孔46時，補強片44A和44B可與相應的下方補強片37形成接合結構。根據替代實施例，補強片27、33、37、44和62接地，且可具有電性屏蔽功能。根據替代實施例，補強片27、33、37、44和62連接至正電源供應電壓。
第15A圖繪示根據替代實施例的封裝件70。這些實施例類似於第14圖中所示的實施例，除了補強片27、33、37、44及/或62除了機械補強功能之外還可具有電氣功能。舉例而言，補強片44A可透過焊料區域53A使封裝元件52A和52B互連。在這些實施例中，補強片44A亦用作對應焊料區域53A的凸塊底層金屬。封裝元件52A可電性連接到封裝元件52B，其中補強片44A承載接地或電源電壓Vdd。封裝元件52A也可訊號連接至封裝元件52B，其中訊號透過補強片44A傳輸。類似於第14圖中的實施例，可在補強片44A的正下方形成或不形成連接至補強片37的通孔46。
第15B圖繪示具有電氣功能的補強片44A的平面圖。所示的補強片44A使用第16E圖所示的圖案作為範例，但也可以使用具有其他圖案的補強片。焊料區域53A形成為連接到補強片44A的相對端，亦繪示可形成或可不形成的通孔46。應理解的是，雖然繪示兩個通孔，但是在整個補強片44A上可能具有複數個通孔46。下方的補強片37（如果形成並連接至補強片44A）可具有與補強片44A相同的形狀或不同的形狀。
第15A圖亦繪示補強片44C，其分佈在除了靠近封裝元件52的周邊區域之外的位置。儘管未圖示，但是類似的補強片44C可以形成在其他層中。舉例而言，可用與形成補強片27、33和37的相同形成製程來形成補強片44C。補強片44C可以形成在能夠為其形成提供足夠空間的任何地方，進而補強片44C具有足夠的尺寸以執行補強功能。如第15A圖所示，一些補強片44C可以與封裝元件52A及/或52B完全重疊，而一些其他補強片可以完全偏離封裝元件52A和52B。儘管未圖示，但是可以在例如第14、20和22圖所示的其他封裝件70中形成補強片44C。
第20和21圖分別繪示根據一些實施例的封裝件70的剖視圖和俯視圖。這些實施例與第14和15A圖中所示的實施例相似，除了通孔78形成在封裝膠56中，且用於將重分佈結構48電性連接至封裝件80上。根據本揭露的一些實施例，通孔78的形成包括在介電層38中形成開口以暴露重分佈線36中的一些金屬墊，形成延伸到前述開口中的金屬種子層，在重分佈結構48上形成例如光阻的電鍍遮罩，對電鍍遮罩進行圖案化以形成額外的開口，且在額外的開口中電鍍通孔78。在介電層38中形成通孔79以將通孔78連接到重分佈線36。根據一些實施例，為了降低製造成本，用於通孔79的通孔開口可以與凸塊底層金屬42的通孔開口同時形成。因此，用於形成通孔79和通孔78的金屬種子層可以是與用於形成凸塊底層金屬42和補強片44相同的金屬種子層。換言之，通孔78、通孔79與凸塊底層金屬42共享相同的通孔開口形成製程和相同的金屬種子層形成製程，但是具有與凸塊底層金屬42不同的電鍍遮罩和不同的電鍍製程。根據一些實施例，在形成通孔78之後，封裝元件52可以結合到重分佈結構48。
在將通孔78和封裝元件52封裝在封裝膠56中之後，封裝件80透過焊料區域84與通孔78結合。根據一些實施例，封裝件80包括結合到封裝基板的記憶體晶粒。可分配底膠82以保護焊料區域84。接著，將對應的重組晶片切割成封裝件100'。封裝元件66與封裝件100’的其中一者結合。
第21圖繪示根據一些實施例之具有通孔78的封裝件70的範例平面圖。通孔78可與環繞封裝元件52的環對準。根據一些實施例，亦繪示補強片74。應理解的是，所示的補強片74和封裝元件52是範例，且也可以採用例如第18和19圖所示的其他佈局。
第22圖繪示根據一些實施例的封裝件70的剖視圖。這些實施例與第14和15A圖所示的實施例相似，除了封裝元件52A和52B之外亦可設有複數個封裝元件52C。根據一些實施例，封裝元件52A和52B是邏輯晶粒，且封裝元件52C可以是記憶體晶粒，利如高帶寬記憶體（HBM）的記憶體晶粒堆疊、記憶體封裝或其他類似的元件。第22圖可以從第19圖中所示的參考截面22-22獲得。
在以上說明的實施例中，根據本揭露的一些實施例說明一些製程和特徵，以形成三維（3D）封裝。也可以包括其他特徵和製程。舉例而言，可包括測試結構以輔助3D封裝或3DIC裝置的驗證測試。測試結構可包括例如形成在重分佈層中或基底上的測試墊，此測試墊允許測試3D封裝或3DIC，使用探針及/或探針卡等。驗證測試可以在中間結構以及最終結構上執行。另外，本文所揭露的結構和方法可與結合已知良好晶粒的中間驗證測試方法結合使用，以提高良率且降低成本。
本揭露的實施例具有一些有利特徵。透過在應力高的封裝件的某些位置形成補強片，補強片可為封裝件提供額外的機械支撐。可與某些重分佈線的形成製程共享共同的製程來形成補強片，因此不會產生額外的成本。
根據本揭露的一些實施例，一種封裝件的製造方法包括：形成重分佈結構。前形成述重分佈結構包括：在載體上方形成複數個介電層；形成複數個重分佈線，延伸至前述介電層中；以及在前述載體上方形成補強片。此方法更包括將第一封裝元件結合至前述重分佈結構。前述第一封裝元件包括周邊區域，前述周邊區域與前述補強片的一部分重疊。從前述載體使前述重分佈結構和前述第一封裝元件脫離。根據一實施例，前述方法更包括在前述第一封裝元件和前述重分佈結構之間分配底膠，其中前述底膠接觸前述補強片。根據一實施例，前述方法更包括在前述脫離的操作之後，形成額外補強片，其中前述補強片和前述額外補強片位於前述介電層的相反側。
根據一實施例，形成前述重分佈結構的操作更包括：形成複數個凸塊底層金屬，延伸至前述介電層的其中一者中，其中前述補強片和前述凸塊底層金屬是以共同的製程形成，且將前述第一封裝元件結合至前述凸塊底層金屬。
根據一實施例，形成前述補強片的操作包括電鍍。
根據一實施例，在前述脫離的操作之後，前述補強片完全被包覆在複數個介電材料中。
根據一實施例，前述方法更包括將第二封裝元件結合至前述重分佈結構，其中前述補強片包括：第一部分、第二部分以及第三部分，第一部分與前述第一封裝元件重疊，第二部分與前述第二封裝元件重疊，第三部分接合前述第一部分和第二部分。
根據一實施例，前述補強片具有一網格圖案。
根據本揭露的一些實施例，一種封裝件包括：重分佈結構、第一封裝元件以及底膠。重分佈結構包括：複數個介電層、複數個重分佈線以及補強片。前述重分佈線延伸至前述介電層中。前述補強片與前述介電層重疊，其中前述補強片包括金屬材料。第一封裝元件位於前述重分佈結構上方且結合至前述重分佈結構。底膠位於前述重分佈結構和前述第一封裝元件之間，其中前述底膠接觸前述補強片。
根據一實施例，前述補強片完全被包覆在複數個介電材料中。
根據一實施例，前述補強片具有大於約500μm的寬度。
根據一實施例，前述補強片與前述第一封裝元件的邊緣區域重疊，且重疊寬度大於約200μm。
根據一實施例，前述補強片是電性浮接的。
根據一實施例，前述補強片電性連接至前述第一封裝元件，且前述補強片具有網格結構。
根據一實施例，前述補強片形成一環，接近前述第一封裝元件的四個邊緣。
根據本揭露的一些實施例，一種封裝件包括：重分佈結構以及封裝元件。重分佈結構包括：複數個介電層、複數個重分佈線以及補強片。前述重分佈線延伸至前述介電層中。前述補強片接觸前述介電層的其中一者，其中前述補強片是電性浮接的。封裝元件結合至前述重分佈結構，其中前述補強片包括第一部分，與前述封裝元件的角落部分重疊。
根據一實施例，前述補強片更包括第二部分，延伸於前述封裝元件之外。
根據一實施例，前述補強片的第一部分具有大於約200μm的寬度。
根據一實施例，前述補強片形成一環，包括：內部以及外部。內部與前述封裝元件重疊。外部延伸於前述封裝元件的複數個邊緣之外，其中前述內部和外部皆為環形。
根據一實施例，前述封裝件更包括：底膠，位於前述重分佈結構和前述封裝元件之間，其中前述底膠接觸前述補強片。
以上概述了許多實施例的特徵，使本揭露所屬技術領域中具有通常知識者可以更加理解本揭露的各實施例。本揭露所屬技術領域中具有通常知識者應可理解，可以本揭露實施例為基礎輕易地設計或改變其他製程及結構，以實現與在此介紹的實施例相同的目的及/或達到與在此介紹的實施例相同的優點。本揭露所屬技術領域中具有通常知識者也應了解，這些相等的結構並未背離本揭露的精神與範圍。在不背離後附申請專利範圍的精神與範圍之前提下，可對本揭露實施例進行各種改變、置換及變動。
20:載體 22:離型膜 24, 28, 34, 38:介電層 26, 32, 36:重分佈線 27, 33, 37:補強片 30, 40, 58:開口 42, 60:凸塊底層金屬 44, 44A, 44B, 44C:補強片 46, 72, 78, 79:通孔 48:重分佈結構 50:金屬墊 52, 52A, 52B, 52C, 66:封裝元件 53, 53A, 64, 84:焊料區域 54, 68, 82:底膠 56:封裝膠 62, 62A, 62B:補強片 70, 80:封裝件 74, 74A, 74B:補強片 75:外部輪廓 100, 100’:重組晶圓 200:製程流程 202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224:製程 14-14, 20-20:參考截面 D1:直徑 G:間隙 L, L1, L3:長度 L2:重疊長度 L2’:非重疊長度 W, W1, W3:寬度 W2, W4:重疊寬度 W2’:非重疊寬度
根據以下的詳細說明並配合所附圖式以更好地了解本揭露實施例的概念。應注意的是，根據本產業的標準慣例，圖式中的各種特徵未必按照比例繪製。事實上，可能任意地放大或縮小各種特徵的尺寸，以做清楚的說明。在通篇說明書及圖式中以相似的標號標示相似的特徵。 第1至14圖繪示根據一些實施例之形成包括補強片的封裝件的中間步驟的剖視圖。 第15A和15B圖分別繪示根據一些實施例之包括具備電氣功能的補強片的封裝件的剖視圖和平面圖。 第16A、16B、16C、16D、16E、16F和16G圖繪示根據一些實施例之範例補強片的圖案。 第17至19圖繪示根據一些實施例之一些補強片的佈局。 第20和21圖分別繪示根據一些實施例之具有通孔的封裝件的剖視圖和平面圖。 第22圖繪示根據一些實施例之具有複數個封裝元件和對應的補強片的封裝件的剖視圖。 第23圖繪示根據一些實施例之形成封裝件的製程流程圖。
200:製程流程
202,204,206,208,210,212,214,216,218,220,222,224:製程

Claims (20)

  1. 一種封裝件的製造方法，包括： 形成一重分佈結構，包括： 在一載體上方形成複數個介電層； 形成複數個重分佈線，延伸至該等介電層中；以及 在該載體上方形成一補強片； 將一第一封裝元件結合至該重分佈結構，其中該第一封裝元件包括一周邊區域，該周邊區域與該補強片的一部分重疊；以及 使該重分佈結構和該第一封裝元件從該載體脫離。
  2. 如請求項1所述之封裝件的製造方法，更包括在該第一封裝元件和該重分佈結構之間分配一底膠，其中該底膠接觸該補強片。
  3. 如請求項1所述之封裝件的製造方法，更包括在該脫離的操作之後，形成一額外補強片，其中該補強片和該額外補強片位於該等介電層的相反側。
  4. 如請求項1所述之封裝件的製造方法，其中形成該重分佈結構的操作更包括： 形成複數個凸塊底層金屬，延伸至該等介電層的其中一者中，其中該補強片和該等凸塊底層金屬是以一共同的製程形成，且將該第一封裝元件結合至該等凸塊底層金屬。
  5. 如請求項1所述之封裝件的製造方法，其中形成該補強片的操作包括電鍍。
  6. 如請求項1所述之封裝件的製造方法，其中在該脫離的操作之後，該補強片完全被包覆在複數個介電材料中。
  7. 如請求項1所述之封裝件的製造方法，更包括將一第二封裝元件結合至該重分佈結構，其中該補強片包括： 一第一部分，與該第一封裝元件重疊； 一第二部分，與該第二封裝元件重疊；以及 一第三部分，接合該第一部分和該第二部分。
  8. 如請求項1所述之封裝件的製造方法，其中該補強片具有一網格圖案。
  9. 一種封裝件，包括： 一重分佈結構，包括： 複數個介電層； 複數個重分佈線，延伸至該等介電層中；以及 一補強片，與該等介電層重疊，其中該補強片包括一金屬材料； 一第一封裝元件，位於該重分佈結構上方且結合至該重分佈結構；以及 一底膠，位於該重分佈結構和該第一封裝元件之間，其中該底膠接觸該補強片。
  10. 如請求項9所述之封裝件，其中該補強片完全被包覆在複數個介電材料中。
  11. 如請求項9所述之封裝件，其中該補強片具有大於約500μm的寬度。
  12. 如請求項9所述之封裝件，其中該補強片與該第一封裝元件的一邊緣區域重疊，且一重疊寬度大於約200μm。
  13. 如請求項9所述之封裝件，其中該補強片是電性浮接的。
  14. 如請求項9所述之封裝件，其中該補強片電性連接至該第一封裝元件，且該補強片具有一網格結構。
  15. 如請求項9所述之封裝件，其中該補強片形成一環，接近該第一封裝元件的四個邊緣。
  16. 一種封裝件，包括： 一重分佈結構，包括： 複數個介電層； 複數個重分佈線，延伸至該等介電層中；以及 一補強片，接觸該等介電層的其中一者，其中該補強片是電性浮接的；以及 一封裝元件，結合至該重分佈結構，其中該補強片包括一第一部分，與該封裝元件的一角落部分重疊。
  17. 如請求項16所述之封裝件，其中該補強片更包括一第二部分，延伸於該封裝元件之外。
  18. 如請求項16所述之封裝件，其中該補強片的該第一部分具有大於約200μm的寬度。
  19. 如請求項16所述之封裝件，其中該補強片形成一環，包括： 一內部，與該封裝元件重疊；以及 一外部，延伸於該封裝元件的複數個邊緣之外，其中該內部和該外部皆為環形。
  20. 如請求項16所述之封裝件，更包括： 一底膠，位於該重分佈結構和該封裝元件之間，其中該底膠接觸該補強片。
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