TW202135642A - Manufacturing method for die bonding device and semiconductor device characterized by improving the uniformity of photographic conditions of photographed objects - Google Patents
Manufacturing method for die bonding device and semiconductor device characterized by improving the uniformity of photographic conditions of photographed objects Download PDFInfo
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Abstract
Description
本揭示係關於晶粒接合裝置,例如能夠適用於以複數辨識攝影機攝像接合區域的晶粒接合器。The present disclosure relates to a die bonding device, and for example, it can be applied to a die bonder that recognizes the bonding area of a camera with a plurality of numbers.
半導體裝置之製造工程之一部分具有在配線基板或引線框架等(以下,單稱為基板)載置半導體晶片(以下,單稱為晶粒)而組裝封裝體之工程,組裝封裝體之工程之一部分具有從半導體晶圓(以下,單稱為晶圓)分割晶粒之工程(切割工程),和將分割後的晶粒載置在基板上之接合工程。在接合工程中所使用的半導體製造裝置為晶粒接合器等之晶粒接合裝置。A part of the manufacturing process of a semiconductor device includes a process of mounting a semiconductor chip (hereinafter, simply referred to as a die) on a wiring board or lead frame, etc. (hereinafter referred to as a substrate) to assemble a package, and a part of a process of assembling a package There are a process of dividing a die from a semiconductor wafer (hereinafter, simply referred to as a wafer) (a dicing process), and a bonding process of placing the divided die on a substrate. The semiconductor manufacturing equipment used in the bonding process is a die bonding device such as a die bonder.
晶粒接合器係以樹脂漿糊、焊料、鍍金作為接合材料,將晶粒接合(載置而予以黏接)在基板或已被接合之晶粒上的裝置。例如,在將晶粒接合於基板之表面的晶粒接合器中,重覆進行使用被安裝於接合頭之前端之被稱為夾頭的吸附噴嘴,從晶圓吸附晶粒而進行拾取,且載置於基板上之特定位置,賦予推壓力,同時藉由加熱接合材,進行接合的動作(作業)。The die bonder is a device that uses resin paste, solder, and gold plating as bonding materials to bond (place and bond) the die on the substrate or the bonded die. For example, in a die bonder that bonds dies to the surface of a substrate, a suction nozzle called a chuck installed at the front end of the bonding head is repeatedly used to suck and pick up the die from the wafer, and Place it on a specific position on the substrate, apply a pressing force, and heat the bonding material to perform the bonding action (work).
使用樹脂作為接合材料之情況,使用Ag環氧及丙烯酸等之樹脂漿糊作為黏接劑(以下,稱為漿糊狀黏接劑)。將晶粒黏接於基板的漿糊狀黏接劑被封入至注射器內,該注射器相對於基板上下動作,射出漿糊狀黏接劑而予以塗佈。即是,藉由封入有漿糊狀黏接劑的注射器在特定位置塗佈特定量漿糊狀黏接劑,晶粒被壓接、烘烤而被黏接於其漿糊狀黏接劑上。在注射器之附近,安裝辨識攝影機,藉由該辨識攝影機,確認塗佈漿糊狀黏接劑之位置而進行定位,再者,確認被塗佈之漿糊狀黏接劑是否以特定形狀且僅特定量被塗佈在特定位置。When resin is used as a bonding material, resin paste such as Ag epoxy and acrylic is used as an adhesive (hereinafter referred to as a paste adhesive). The paste-like adhesive for bonding the die to the substrate is enclosed in a syringe, and the syringe moves up and down with respect to the substrate to inject the paste-like adhesive and apply it. That is, by applying a specific amount of paste-like adhesive to a specific position with a syringe enclosed with a paste-like adhesive, the die is crimped and baked to be bonded to the paste-like adhesive. . Install an identification camera near the syringe, and use the identification camera to confirm the position where the paste-like adhesive is applied for positioning. Furthermore, confirm whether the applied paste-like adhesive has a specific shape and only A specific amount is applied to a specific location.
再者,在接合頭之附近安裝辨識攝影機,以該辨識攝影機,確認晶粒被接合的基板之位置而進行定位,再者,確認被接合的晶粒是否被接合於特定位置。 [先前技術文獻] [專利文獻]Furthermore, a recognition camera is installed near the bonding head, and the recognition camera is used to confirm the position of the substrate to which the die is bonded for positioning. Furthermore, it is confirmed whether the die to be bonded is bonded at a specific position. [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本特開2013-197277號公報[Patent Document 1] JP 2013-197277 A
[發明所欲解決之課題][The problem to be solved by the invention]
當以使用非遠心透鏡之一個攝像裝置攝像複數攝像對象物時,遠離攝像裝置之正下方的攝像對象物成為傾斜攝像,而看成立體形狀的側面。 本揭示之課題係提供能提升複數攝像對象物之攝像條件之一致性的技術。 其他之課題和新穎之特徵從本說明書之記載及附件圖面明顯可知。 [用以解決課題之手段]When a single imaging device using a non-telecentric lens is used to capture a plurality of imaging objects, the imaging object far below the imaging device becomes oblique imaging and looks at the side surface of a solid shape. The subject of this disclosure is to provide a technology that can improve the uniformity of the imaging conditions of a plurality of imaging objects. Other topics and novel features are obvious from the description of this manual and the attached drawings. [Means to solve the problem]
若簡單說明本揭示中代表性之內容的概要則如同下述般。 即是,晶粒接合裝置具備:搬運路徑,其係用以搬運基板;複數攝像裝置,其係沿著上述基板之寬度方向以一列地被固定配設在上述搬運路徑之上方;及控制部,其係被構成為以上述複數攝像裝置攝像位於上述基板上的沿著上述寬度方向的一列複數接合區域而取得複數畫像,根據所取得的複數上述畫像而生成合成畫像,根據上述合成畫像而辨識上述接合區域之攝像對象物,各攝像裝置之攝像視野在上述基板上重複,重複的上述攝像視野被構成為大於上述接合區域。 [發明之效果]A brief description of the outline of the representative content in this disclosure is as follows. That is, the die bonding device includes: a conveying path for conveying a substrate; a plurality of imaging devices fixedly arranged above the conveying path in a row along the width direction of the substrate; and a control unit, It is configured to use the plurality of imaging devices to image a row of multiple junction regions located on the substrate along the width direction to obtain a plurality of images, to generate a composite image based on the acquired plurality of images, and to recognize the above based on the composite image. For the imaging target in the bonding area, the imaging field of view of each imaging device overlaps on the substrate, and the repeated imaging field is configured to be larger than the bonding area. [Effects of Invention]
若藉由上述晶粒接合裝置時,能夠提升複數攝像對象物之攝像條件之一致性。With the above-mentioned die bonding device, the uniformity of imaging conditions for a plurality of imaging objects can be improved.
以下,針對實施型態、變形例及實施例使用圖面進行說明。但是,在以下之說明中,有對相同構成要素賦予相同符號,省略重覆說明之情形。另外,為了使說明更明確,雖然有圖面比起實際態樣,針對各部之寬度、厚度、形狀等,以示意性表示之情形,但是此僅為一例,並非用以限定本發明之解釋。Hereinafter, implementation types, modified examples, and embodiments are described using drawings. However, in the following description, the same reference numerals are given to the same constituent elements, and repetitive descriptions may be omitted. In addition, in order to make the description clearer, although there are diagrams that illustrate the width, thickness, shape, etc. of each part more than the actual state, this is only an example and is not intended to limit the interpretation of the present invention.
首先,使用圖1~圖3,針對本發明者們探討的技術予以說明。圖1(a)為表示通常視野光學系統的斜視圖,圖1(b)表示為寬視野光學系統的斜視圖。First, using FIGS. 1 to 3, the technique discussed by the inventors will be explained. Fig. 1(a) is an oblique view showing a normal field optical system, and Fig. 1(b) is an oblique view showing a wide field optical system.
在依序進行基板S之定位、接合(晶粒接合或漿糊塗佈)、檢查的動作中,如圖1(a)所示般,當使用使用低解像度之攝像裝置CML之通常視野光學系統時,因僅攝像比一個接合區域AA略大的區域,故需要僅有接合區域AA之數量的攝像及畫像辨識。在此,作為一例,表示在基板S,具有一列6個的接合區域AA,具有五列的接合區域之例。低解像度之攝像裝置係僅在比一個接合區域略大的區域才能以足夠的解像度攝像的攝像裝置,例如解像度約30萬~約130萬畫素之攝像裝置。In the sequence of positioning, bonding (die bonding or paste coating), and inspection of the substrate S, as shown in Figure 1(a), when using a low-resolution imaging device CML with a normal field of view optical system Since only an area slightly larger than one joining area AA is captured, only the number of joining areas AA and image recognition are required. Here, as an example, an example in which the substrate S has six bonding areas AA in one row and five bonding areas is shown. A low-resolution camera device is a camera device that can capture images with sufficient resolution only in an area slightly larger than a junction area, for example, a camera device with a resolution of about 300,000 to about 1.3 million pixels.
因此,如圖1(a)所示般,必須重覆進行使攝像裝置CML在基板S之寬度方向(Y軸方向)移動,而進行其列中之其他的接合區域之攝像及畫像辨識,並進行根據其畫像辨識的處理之動作。另外,一列的攝像後係將基板S在基板搬運方向(X軸方向)移動而進行下一列的攝像。Therefore, as shown in FIG. 1(a), it is necessary to repeatedly move the imaging device CML in the width direction (Y-axis direction) of the substrate S, and perform imaging and image recognition of other bonding areas in the row, and Carry out the action of processing based on the identification of its portrait. In addition, after imaging in one row, the substrate S is moved in the substrate conveying direction (X-axis direction) to perform imaging in the next row.
因此,需要使攝像裝置CML之支持構件(無圖示)在基板S之寬度方向移動的移動機構,攝像裝置CML之支持機構複雜化及大型化,變得昂貴。再者,因為需要用以朝攝像裝置CML之寬度方向的移動時間,並且隨著支持構件之移動產生的振動所致的攝像裝置CML之搖晃平息為止之攝像的等待時間,故無法使晶粒接合高速化。或是,為了防止振動,需要振動防止機構,並且晶粒接合變得昂貴。再者,具有在接合區域之上空且攝像裝置之下方往返動作的機構部之情況,必須斟酌藉由該機構部不遮蔽攝像視野的時機進行攝像。藉由確保該攝像時機,無法使晶粒接合高速化。Therefore, a moving mechanism for moving the supporting member (not shown) of the imaging device CML in the width direction of the substrate S is required, and the supporting mechanism of the imaging device CML becomes complicated and large, and becomes expensive. Furthermore, since it takes time to move in the width direction of the imaging device CML, and the waiting time for imaging until the shaking of the imaging device CML due to the vibration generated by the movement of the support member subsides, it is impossible to bond the die Speed up. Or, in order to prevent vibration, a vibration prevention mechanism is required, and die bonding becomes expensive. Furthermore, if there is a mechanism section that moves back and forth above the junction area and below the imaging device, it is necessary to consider the timing at which the mechanism section does not block the imaging field of view. By ensuring this imaging timing, it is impossible to increase the speed of die bonding.
另一方面,不每次基板之搬運後的接合重複此,如圖1(b)所示般,當使用高解像度之攝像裝置CMH之寬視野光學系統時,基板S之所有接合區域(所有突片匯集一起)或在基板之寬度方向之至少1列之接合區域攝像且進行辨識,處理時間成為效率化,可以解決上述問題點。在此,高解像度之攝像裝置係指可以至少將基板S之寬度方向一列分之所有區域一次以足夠的解像度進行攝像的攝像裝置,例如解像度約500萬畫素以上的攝像裝置。一列包含複數接合區域,例如包含4個接合區域。On the other hand, this is not repeated every time the substrate is joined after the conveyance. As shown in Figure 1(b), when the wide-field optical system of the high-resolution imaging device CMH is used, all the joining areas (all protrusions) of the substrate S Collecting the pieces together) or imaging and recognizing the bonding area in at least one row in the width direction of the substrate, the processing time becomes efficient, and the above-mentioned problem can be solved. Here, a high-resolution imaging device refers to an imaging device that can capture at least all areas divided into a column in the width direction of the substrate S at a time with sufficient resolution, for example, an imaging device with a resolution of about 5 million pixels or more. One row includes a plurality of joint areas, for example, includes 4 joint areas.
但是,寬視野光學系統(寬域攝影機)有以下之問題點。針對該問題點,使用圖2及圖3予以說明。圖2(a)為使用微透鏡之寬視野光學系統之概念圖,圖2(b)為使用遠心透鏡之寬視野光學系統之概念圖。圖3(a)為表示漿糊之立體形狀之影像的圖,圖3(b)為表示以微透鏡在寬域觀看基板之時的漿糊上之譜線的圖。However, the wide-field optical system (wide-field camera) has the following problems. To solve this problem, use Fig. 2 and Fig. 3 to explain. Fig. 2(a) is a conceptual diagram of a wide-field optical system using microlenses, and Fig. 2(b) is a conceptual diagram of a wide-field optical system using telecentric lenses. Fig. 3(a) is a diagram showing the image of the three-dimensional shape of the paste, and Fig. 3(b) is a diagram showing the spectral lines on the paste when the substrate is viewed in a wide area with a microlens.
(1)遠心性之確保 雖然即使單純地僅降低微透鏡之倍率,也成為寬域,但是成為越偏離視野之中心越從斜上方觀看的狀態,如圖2(a)所示般,雖然在視野中心之攝像對象物OBC中,看不見側面,但是在左側之攝像對象物OBL中,看得見右側面,在右側之攝像對象物OBR中,看得見左側面,看成立體形狀的側面。再者,倍率藉由攝像對象物OBL之高度而變化,當高度變化時,難以進行如對準。例如,被塗佈在基板之漿糊或被疊層在基板之晶粒由於位置不同高度有所不同。(1) Ensuring telecentricity Even if the magnification of the microlens is simply reduced, it becomes a wide area, but the more it deviates from the center of the field of view, the more it is viewed obliquely from above, as shown in Figure 2(a), although the imaging object OBC in the center of the field of view In the OBL, the side surface is not visible, but in the OBL on the left side, the right side can be seen, and in the OBR on the right side, the left side can be seen, and the side surface of the stereoscopic shape can be seen. Furthermore, the magnification is changed by the height of the imaging object OBL, and it is difficult to perform such alignment when the height changes. For example, the paste applied on the substrate or the die laminated on the substrate have different heights due to different positions.
該些問題點藉由使用遠心透鏡可以解決。因遠心透鏡係集光平行光,故在所有的攝像對象物看不見側面。但是,在此情況,如圖2(b)所示般,一般需要口徑大於想觀看的視野的透鏡,例如確保例如100mm見方的視野時,需要其對角的141mm以上之口徑,依此,焦點距離變長。將如此大型的透鏡安裝於晶粒接合裝置,從效率性之觀點來看不理想。These problems can be solved by using a telecentric lens. Since the telecentric lens collects parallel light, the side of all the imaging objects cannot be seen. However, in this case, as shown in Figure 2(b), a lens with a diameter larger than the desired field of view is generally required. For example, to ensure a field of view of 100mm square, for example, a diagonal diameter of 141mm or more is required. The distance becomes longer. Mounting such a large lens on a die bonding device is not ideal from the viewpoint of efficiency.
(2)在視野內中之均勻照明的照射 在使用非遠心透鏡而確保寬域之情況,在視野之端的一方成為從斜上方觀看之狀態。因為此在視野之右端和左端,或上端和下端中,方向成為相反,故照明之照射方向容易成為不均勻。再者,即使在照射使用遠心光之平行光的情況,在攝像視野內也難取得均勻照射的畫像。例如,如圖3(a)所示般,十字形狀地被塗佈在基板之漿糊狀黏接劑PA係中心部分較高,前端部分被形成較低。以微透鏡在寬域觀看圖3(a)所示般地被塗佈有漿糊狀黏接劑的基板之情況,如圖3(b)所示般,因從正上方觀看攝像視野之中央部,故較亮,因傾斜觀看周邊部,故較暗,再者,因漿糊狀黏接劑之高度不均勻,故漿糊狀黏接劑PA上之譜線移動。在此,攝像裝置之視野中心位於圖3(b)之畫像中心。在基板S具有一列6個的作為接合區域的突片TB,表示7列。在基板S之右側的四列的突片TB,塗佈漿糊狀黏接劑PA。(2) Uniform illumination in the field of view When a non-telecentric lens is used to ensure a wide area, one side of the field of view becomes a state of obliquely viewing from above. Because the direction of this is opposite in the right and left ends, or the upper and lower ends of the field of view, the direction of illumination is likely to become uneven. Furthermore, even when irradiating parallel light using telecentric light, it is difficult to obtain a uniformly irradiated image within the imaging field of view. For example, as shown in FIG. 3(a), the paste adhesive PA applied to the substrate in the shape of a cross is higher in the center part and lower in the front end part. Viewing the substrate coated with paste adhesive as shown in Figure 3(a) with a microlens in a wide area, as shown in Figure 3(b), because the center of the imaging field of view is viewed from directly above The part is brighter, and the peripheral part is obliquely viewed, so it is darker. Furthermore, because the height of the paste-like adhesive is uneven, the spectral lines on the paste-like adhesive PA move. Here, the center of the field of view of the camera is at the center of the image in Figure 3(b). The substrate S has six tabs TB as bonding regions in a row, which means seven rows. The four rows of tabs TB on the right side of the substrate S are coated with a paste-like adhesive PA.
接著,針對解決上述問題點的實施形態,使用圖4~圖5予以說明。圖4(a)係針對實施型態之攝像裝置之多重化的上視圖,圖4(b)為在圖4(a)從箭號A方向觀看之時的側視圖。圖5係針對用於實施型態之攝像裝置的照明裝置予以說明的圖,圖5(a)係照明裝置之剖面圖,圖5(b)為側視圖。Next, an embodiment that solves the above-mentioned problem will be described using FIGS. 4 to 5. Fig. 4(a) is a top view for the multiplexing of the imaging device of the implementation type, and Fig. 4(b) is a side view when viewed from the direction of arrow A in Fig. 4(a). Fig. 5 is a diagram illustrating the lighting device used in the imaging device of the implementation type, Fig. 5(a) is a cross-sectional view of the lighting device, and Fig. 5(b) is a side view.
作為解決上述問題點的實施型態,進行攝像裝置之多重化(立體化)。例如,如圖4所示般,在基板S之上方,將複數攝像裝置CM1~CM4在基板S之寬度方向(Y軸方向)排成一列並予以固定地配設。在此,攝像裝置CM1~ CM4之各者係與攝像裝置CML相同程度以上的解像度之攝像裝置,無法一次以足夠的解像度攝像基板S之寬度方向之一列分的全區域的攝像裝置。再者,即使攝像裝置CM1 ~CM4之各者使用遠心透鏡亦可,以使用微透鏡等之非遠心透鏡為佳。該些攝像裝置CM1~CM4係以相同高度在水平方向隔著特定間隔,各攝像裝置CM1~CM4之光軸彼此平行並且相對於基板S呈垂直。另外,即使使攝像裝置CM1~CM4之光軸在容許攝像視野中之失焦的範圍,從對基板S之垂直線稍微傾斜亦可。As an implementation form for solving the above-mentioned problems, multiplexing (three-dimensional) of the imaging device is performed. For example, as shown in FIG. 4, above the substrate S, a plurality of imaging devices CM1 to CM4 are arranged in a row in the width direction (Y-axis direction) of the substrate S and fixedly arranged. Here, each of the imaging devices CM1 to CM4 is an imaging device with a resolution equal to or higher than that of the imaging device CML, and it is not possible to image the entire area of one column in the width direction of the substrate S with sufficient resolution at one time. Furthermore, even if each of the imaging devices CM1 to CM4 uses a telecentric lens, it is better to use a non-telecentric lens such as a micro lens. The imaging devices CM1 to CM4 are at the same height with a certain interval in the horizontal direction. The optical axes of the imaging devices CM1 to CM4 are parallel to each other and perpendicular to the substrate S. In addition, even if the optical axes of the imaging devices CM1 to CM4 are allowed to be out of focus in the imaging field of view, they may be slightly inclined from the vertical line to the substrate S.
在本實施型態中,攝像裝置CM1~CM4之各者係攝像接合區域AA11~AA14之攝像對象物。再者,攝像裝置CM1~CM4之各者的攝像視野IA1~IA4不重複。再者,藉由將基板S在搬運方向(Y軸方向)移動,依序攝像剩下之列的攝像對象物。藉由使攝像裝置多重化,可以在攝像對象物之略正上方進行攝像,可以提升攝像視野內之照明之均勻性而進行檢查。再者,藉由使攝像裝置多重化,無須移動攝像裝置,可以取得與寬視野光學系統相同的處理效率。In this embodiment, each of the imaging devices CM1 to CM4 is the imaging object in the imaging junction area AA11 to AA14. In addition, the imaging fields IA1 to IA4 of each of the imaging devices CM1 to CM4 do not overlap. Furthermore, by moving the substrate S in the conveying direction (Y-axis direction), the remaining rows of imaging objects are sequentially imaged. By multiplying the imaging device, the imaging can be performed just above the imaging object, and the uniformity of the illumination within the imaging field of view can be improved for inspection. Furthermore, by multiplexing the imaging device, there is no need to move the imaging device, and the same processing efficiency as the wide-field optical system can be achieved.
在此,基板S係例如圖(a)(b)所示般,為矩形狀並且平板狀,於縱橫具有多數接合區域AA11~AA14、AA21~AA24、・・・。基板S係被構成為搬運方向(X軸方向)之長度較寬度方向(Y軸方向)之長度長。Here, the substrate S is, for example, as shown in (a) (b), and has a rectangular shape and a flat plate shape, and has many bonding areas AA11 to AA14, AA21 to AA24, and ・・・ in the vertical and horizontal directions. The substrate S is configured such that the length in the conveying direction (X-axis direction) is longer than the length in the width direction (Y-axis direction).
多重化之攝像裝置以各者持有相同的照明系統為佳。例如,如圖5(a)所示般,在攝像裝置CM1~CM4和基板S之間,配置在內部具備面發光照明(光源)SL、半反射鏡(半透過鏡)HM的照明裝置LD。來自面發光照明SL之照射光係藉由半反射鏡HM以與攝像裝置CM1~CM4相同的光軸反射,被照射至基板S之接合區域AA11~AA14之攝像對象物。以與攝像裝置CM1~CM4相同的光軸被照射至接合區域AA11~AA14之攝像對象物的其散射光,係以接合區域AA11~AA14之攝像對象物反射,其中的正反射光穿透半反射鏡HM而到達至攝像裝置CM1~CM4,形成接合區域AA11~AA14之攝像對象物之映像。即是,照明裝置LD具有同軸落射照明(同軸照明)之機能。It is better for multiple cameras to have the same lighting system. For example, as shown in FIG. 5(a), between the imaging devices CM1 to CM4 and the substrate S, an illuminating device LD provided with a surface emitting illumination (light source) SL and a half mirror (half-transmissive mirror) HM inside is arranged. The irradiated light from the surface-emitting illumination SL is reflected by the half mirror HM on the same optical axis as the imaging devices CM1 to CM4, and is irradiated to the imaging target in the bonding area AA11 to AA14 of the substrate S. The scattered light irradiated to the imaging object in the junction area AA11~AA14 with the same optical axis as the imaging device CM1~CM4 is reflected by the imaging object in the junction area AA11~AA14, and the regular reflection light is transmitted through and semi-reflected The mirror HM reaches the imaging devices CM1 to CM4, and forms the image of the imaging target in the joining areas AA11 to AA14. That is, the illuminating device LD has the function of coaxial epi-illumination (coaxial illumination).
如圖5(b)所示般,面發光照明SL及半反射鏡HM之Y軸方向之長度被構成為較基板S之寬度方向中之攝像裝置CM1~CM4之攝像視野全體寬一點,面發光照明SL被分割成較攝像裝置CM1~CM4之各攝像視野寬一點的發光區域SL1~SL4,而設為各個能夠點燈/熄燈。同軸照明裝置之發光區域被區分,每攝像裝置CM1~CM4能夠調光。依此,能夠提升在攝像裝置CM1~CM4之攝像視野之所有的區域中之照明的均勻性。另外,如後述般,在攝像裝置CM1~CM4之攝像視野之各者重複之情況,發光區域SL1~ SL4也重複。As shown in Figure 5(b), the length in the Y-axis direction of the surface-emitting illumination SL and the half mirror HM is configured to be a little wider than the entire imaging field of view of the imaging devices CM1 to CM4 in the width direction of the substrate S, and the surface emits light. The illumination SL is divided into light-emitting areas SL1 to SL4 that are slightly wider than the respective imaging fields of the imaging devices CM1 to CM4, and each can be turned on/off. The light-emitting area of the coaxial lighting device is divided, and each camera device CM1 ~ CM4 can be dimmed. Accordingly, the uniformity of illumination in all areas of the imaging field of view of the imaging devices CM1 to CM4 can be improved. In addition, as will be described later, when each of the imaging fields of the imaging devices CM1 to CM4 overlaps, the light emitting regions SL1 to SL4 also overlap.
接著,針對複數攝像裝置之攝像視野之重複,使用圖6至圖8予以說明。圖6為針對複數攝像裝置之攝像視野之重複而予以說明的上視圖。圖7為在圖6中從箭號A方向觀看之時的側視圖。圖8為針對攝像視野之重複量予以說明的圖。Next, the repetition of the imaging field of view of the plural imaging devices will be described using FIGS. 6 to 8. Fig. 6 is a top view explaining the repetition of the imaging field of view of a plurality of imaging devices. Fig. 7 is a side view when viewed from the direction of arrow A in Fig. 6. Fig. 8 is a diagram illustrating the amount of repetition of the imaging field of view.
在上述實施型態中,表示攝像裝置CM1~ CM4之各者的攝像視野IA1~IA4不重複的例。但是,於進行攝像裝置之多重化之時,因多種製品間距(接合區域之間距)和攝像裝置之間距不一定要相同,故如圖6及圖7所示般,以某程度重複攝像視野間為佳。In the above-mentioned embodiment, the imaging field of view IA1 to IA4 of each of the imaging devices CM1 to CM4 is not overlapped. However, when multiple imaging devices are performed, the distance between the various products (the distance between the joining areas) and the distance between the imaging devices do not have to be the same, so as shown in Figure 6 and Figure 7, the imaging field is repeated to a certain extent. Better.
在圖6及圖7中,作為一例,表示設置四台攝像裝置,在基板S之一列設置六個接合區域的例,攝像裝置之間距大於接合區域之間距。因此,使鄰接之攝像裝置之攝像視野重複,例如設為在一個攝像裝置之攝像視野,包含兩個以上之攝像對象物。依此,攝像裝置CM1~CM4之各者為解像度高於攝像裝置CML的解像度之攝像裝置。攝像裝置CM1~CM4之各者雖然係無法一次以足夠的解像度攝像基板S之寬度方向一列分的全區域的攝像裝置,但是即使為可以一次以足夠的解像度攝像基板S之寬度方向一列分之全區域的攝像裝置亦可。在此,基板S係例如圖6所示般,為矩形狀並且平板狀,且於縱橫具有多數接合區域AA11~AA16、AA21~AA26、・・・。基板S係被構成為搬運方向(X軸方向)之長度較寬度方向(Y軸方向)之長度長。In FIGS. 6 and 7, as an example, four imaging devices are provided, and six bonding areas are provided in a row of the substrate S, and the distance between the imaging devices is larger than the distance between the bonding areas. Therefore, the imaging field of view of adjacent imaging devices is overlapped, for example, it is assumed that the imaging field of view of one imaging device includes two or more imaging objects. Accordingly, each of the imaging devices CM1 to CM4 is an imaging device with a resolution higher than that of the imaging device CML. Although each of the imaging devices CM1 to CM4 is an imaging device that cannot image the entire area in the width direction of the substrate S with sufficient resolution at a time, even if it can image the entire area in the width direction of the substrate S with sufficient resolution at a time Regional camera devices are also available. Here, the substrate S is, for example, as shown in FIG. 6, is rectangular and flat, and has many bonding areas AA11 to AA16, AA21 to AA26, and ・・・ in the vertical and horizontal directions. The substrate S is configured such that the length in the conveying direction (X-axis direction) is longer than the length in the width direction (Y-axis direction).
攝像視野之重複區域OVL若為包含最大尺寸之攝像對象物的大小即可(若保持最大製品尺寸即可)。依此,所有的攝像對象物在任何的攝像視野捕捉其攝像對象物之全體。如圖8所示般,重複區域OVL若為捕捉攝像對象物OB2之大小時即可,例如針對次直型基板,若為最大突片尺寸之重複量時,所有的突片係其突片之全景映入任何一個的視野。If the overlapping area OVL of the imaging field of view is the size that includes the maximum size of the imaging object (it is sufficient if the maximum product size is maintained). According to this, all the photographic objects capture the whole of the photographic objects in any photographing field of view. As shown in Fig. 8, if the overlapping area OVL is the size of the captured object OB2, for example, for a sub-straight substrate, if the overlapping amount is the largest protrusion size, all the protrusions are among the protrusions. The panorama is reflected in any one's field of vision.
針對複數攝像畫像之合成,使用圖9至圖15予以說明。圖9為說明影像鑲嵌和座標匹配的圖。圖10為說明使用校正板的影像鑲嵌和座標轉換的示意圖。圖11為說明失真的圖。圖12為表示仿射轉換及投影轉換之轉換行列式的圖。圖13為說明藉由基板之目標模型的影像鑲嵌和座標轉換的圖。圖14為以複數攝像裝置攝像在多重引線框架之突片上塗佈漿糊狀黏接劑之狀態的畫像,圖14(a)為無歷時變異之情況之攝像畫像,圖14(b)為具有歷時變異之情況的攝像畫像。圖15為說明空間再補正的圖,圖15(a)為表示空間再補正前之狀態的圖,圖15(b)為表示空間再補正後之狀態的圖。For the synthesis of the plural camera images, the description will be given using Figs. 9-15. Figure 9 is a diagram illustrating image mosaic and coordinate matching. Figure 10 is a schematic diagram illustrating image mosaic and coordinate conversion using a calibration plate. Fig. 11 is a diagram illustrating distortion. Fig. 12 is a diagram showing conversion determinants of affine conversion and projection conversion. FIG. 13 is a diagram illustrating image mosaic and coordinate conversion of the target model by the substrate. Fig. 14 is an image of a state where a paste-like adhesive is applied to the tabs of the multi-lead frame using a plurality of camera devices. Fig. 14(a) is an image taken without temporal variation, and Fig. 14(b) is an image with A camera image of a situation that has been mutated over time. Fig. 15 is a diagram for explaining the space re-correction, Fig. 15(a) is a diagram showing the state before the space re-correction, and Fig. 15(b) is a diagram showing the state after the space re-correction.
為了抑制重複量,控制部CNT係以影像鑲嵌等合成在複數攝像裝置攝像到的畫像。一般的影像鑲嵌為了將複數畫像順利地接合在一起,在原樣的狀況下會有失去畫像之校準的情況。In order to suppress the amount of repetition, the control unit CNT synthesizes images captured by a plurality of imaging devices by image mosaic or the like. In general image mosaic, in order to smoothly join the plural images together, the alignment of the image may be lost in the original condition.
於是,在實施型態中,在複數台之攝像裝置攝像到的畫像之合成中, (A)在晶粒接合裝置之出貨時或調整時,進行使用校正板之影像鑲嵌和座標轉換。 (B)晶粒接合裝置之微調整時或連續運轉中係進行基板之目標模型所致的影像鑲嵌和被配置在滑槽上之目標模型所致的座標轉換。Therefore, in the implementation type, in the synthesis of images captured by multiple cameras, (A) When the die bonding device is shipped or adjusted, perform image mosaic and coordinate conversion using the calibration board. (B) During the fine adjustment of the die bonding device or during continuous operation, the image mosaic caused by the target model of the substrate and the coordinate conversion caused by the target model arranged on the chute are performed.
針對上述(A)使用圖9至圖12予以說明。 如圖9所示般,控制部CNT係於接合裝置之調整時投射成為覆蓋被多重化之攝像裝置之所有攝像視野之標尺的座標標記CMRK,以映入至重複區域OVL範圍的座標標記CMRK之相同交叉點IP為基準,將畫像藉由投影轉換或仿射轉換等進行座標轉換,而取得將各攝像裝置間的畫像順序地接合在一起的一張畫像(合成畫像)。在此,座標標記CMRK係準備校正板作為調整治具,且標記在其平板而加以使用者,座標標記CMRK係例如格子狀者。座標轉換時需要保證全體空間之位置關係的標記。若為圖9所示之覆蓋合成視野全體的座標標記CMRK時,投影轉換等之座標轉換時可以保證全體之空間的位置關係,在各交點間距,能夠進行畫像空間座標和實際空間座標之匹配。The above (A) will be described using FIGS. 9 to 12. As shown in Fig. 9, the control unit CNT is projected as a coordinate mark CMRK which is a scale covering all the imaging fields of the multiplexed imaging device during the adjustment of the bonding device, and is reflected in the coordinate mark CMRK of the OVL range of the overlapping area. With the same intersection IP as the reference, the image is coordinated by projection conversion or affine conversion, etc., to obtain an image (composite image) that sequentially joins the images between the imaging devices. Here, the coordinate mark CMRK prepares a calibration plate as an adjustment jig, and it is marked on the flat plate for the user, and the coordinate mark CMRK is, for example, a grid-shaped one. When the coordinates are converted, it is necessary to ensure the mark of the positional relationship of the whole space. In the case of the coordinate mark CMRK that covers the entire synthetic field of view shown in Figure 9, the overall spatial positional relationship can be guaranteed during coordinate conversion such as projection conversion, and the image space coordinates can be matched with the actual space coordinates at the interval of each intersection.
如圖10所示般,控制部CNT係藉由例如三台攝像裝置區分視野而攝像持有格子狀之紋路的一個大的校正板CP。三台攝像裝置具有由於相鄰接的彼此攝像裝置而持有某程度視野重複的重複區域OV12、OV23。重複區域OV12、OV13內之格子紋路之交叉點IP以黑點表示。As shown in FIG. 10, the control unit CNT uses, for example, three imaging devices to divide the field of view to capture images of a large calibration plate CP having a grid-like pattern. The three imaging devices have overlapping areas OV12 and OV23 with a certain degree of field overlap due to adjacent imaging devices. The intersection IP of the grid pattern in the repeating areas OV12 and OV13 is indicated by black dots.
首先,控制部CNT係以仿射轉換或投影轉換而將相鄰接的攝像裝置中之任一者為基準而轉換另一方的攝像裝置之畫像的畫素座標。在此,基準畫像以畫像IV1,轉換畫像以畫像IV2為例予以說明。轉換係以彼此被轉換的畫像中之交叉點IP之座標(黑點座標)對準所對應的基準畫像中之交叉點IP之座標(黑點座標)之方式,算出仿射轉換或投影轉換之轉換行列之各參數。在此,一般而言,仿射轉換之轉換行列表示於圖12之式(1),投影轉換之行列式表示於圖12之式(2)。轉換行列之算出一般若為三點座標即可,並非單義的轉換,因藉由對相當於格子狀之格子的各個部分進行,能夠更正確轉換,故以對每個格子進行轉換為佳。First, the control unit CNT converts the pixel coordinates of the image of the other imaging device based on either one of the adjacent imaging devices using affine conversion or projection conversion. Here, the reference portrait takes portrait IV1, and the conversion portrait takes portrait IV2 as an example. The conversion is to calculate the affine conversion or projection conversion by aligning the coordinates of the intersection IP (black point coordinates) in the converted images with the coordinates of the intersection IP (black point coordinates) in the corresponding reference image Convert the parameters of the ranks. Here, generally speaking, the transformation matrix of affine transformation is expressed in equation (1) of FIG. 12, and the determinant of projection transformation is expressed in equation (2) of FIG. 12. The calculation of the conversion row and column generally only needs to be a three-point coordinate, which is not an unambiguous conversion. It can be converted more accurately by performing the conversion on each part of the grid-like grid, so it is better to perform the conversion for each grid.
成為基準之畫像IV1持有以圖11所示般之桶型或線軸型等為代表的失真之情況,以先使用進入視野內的校正板CP所有交點IP而將元畫像轉換成與直立的直角坐標系統對準的畫像而進行失真補正為佳(第一失真補正)。依此,重複區域OV12、OV23以外也藉由單純的倍率調整而組入合成畫像。The reference image IV1 has the distortion represented by the barrel type or spool type as shown in Fig. 11. First, use all the intersection IPs of the correction plate CP entering the field of view to convert the meta image into a right angle to the upright It is better to perform distortion correction on the image aligned with the coordinate system (first distortion correction). Accordingly, other than the overlapping areas OV12 and OV23 are also incorporated into the composite image by simple magnification adjustment.
因座標對準係以畫素座標系統進行,故畫像IV2之轉換後的座標被要求成為整數值,但是以仿射轉換或投影轉換被轉換的畫素,不一定要適合該處,也有轉換後的座標成為中間之值的情況。此時,轉換後之畫像的各座標係從接近的轉換後之座標之濃淡值進行以最近相鄰內插法、雙線性內插法、雙三次內插法等為代表的濃淡值補正。Because the coordinate alignment is carried out by the pixel coordinate system, the converted coordinates of the portrait IV2 are required to be integer values, but the pixels converted by affine conversion or projection conversion do not necessarily have to be suitable for this place, and there are also post-conversions. When the coordinates of is the middle value. At this time, each coordinate system of the converted image is corrected by the shade value represented by the nearest neighbor interpolation method, bilinear interpolation method, bicubic interpolation method, etc. from the shade value of the closest converted coordinate system.
針對上述(B)使用圖13至圖15予以說明。 因生產運作前之調整作業中之轉換係在視野內畫像空間中,以多數並且等間距配置表示座標基準的校正板CP之交點IP,故比較容易進行畫像空間和實際座標空間之對準。對此,在連續運轉中或簡易調整中,不使用校正板CP而進行畫像合成和座標對準。因若畫像合成可以知道表示彼此相同處的位置即可,故利用基板上之定位用目標標記TM等。因定位用目標標記TM,作為接合(黏接或黏貼)之時的突片之定位工程,已經作成模板模型之註冊,故利用此。如圖13所示般,在複數突片進入畫像之重複區域OV12、OV23之情況,使用相鄰接之突片之定位用目標標記TM而確保三點以上的標點。在僅有一個突片進入至重複區域之情況,在一個突片事先註冊三點之定位用目標標記TM,作為模板影像模型而予以註冊。The above (B) will be described using FIGS. 13 to 15. Because the conversion in the adjustment before production operation is in the image space in the field of view, the intersection IP of the correction plate CP representing the coordinate reference is arranged in a large number and evenly spaced, so it is easier to align the image space and the actual coordinate space. In this regard, in continuous operation or simple adjustment, image synthesis and coordinate alignment are performed without using the correction plate CP. As long as the images are combined, it is only necessary to know the positions that show the same place, so the target mark TM for positioning on the substrate is used. Since the positioning target mark TM is used as the positioning process of the tab at the time of joining (adhesive or pasting), the template model has been registered, so use this. As shown in Fig. 13, when a plurality of protrusions enter the overlapping areas OV12 and OV23 of the image, the positioning target mark TM of the adjacent protrusions is used to ensure a punctuation of more than three points. In the case where only one protrusion enters the overlapping area, a three-point positioning target mark TM is registered in advance on one protrusion and registered as a template image model.
就以該方法而言,雖然可以藉由畫像間之座標對準進行合成,但是無法進行與實際空間的位置對準。即使將任一的畫像作為基準而予以對準,不事先進行與座標空間的對準,當以原樣地進行合成時,如圖11所示般,作為與基準畫像之畫像IV1相鄰接的畫像IV2及與畫像IV2相鄰接的畫像IV3受到畫像IV1之失真的影響。失真所致的偏離當從畫像IV1依序相鄰接時,最遠的位置的畫像IV3最放大。為了抑制該放大量,在滑槽SCT之已知的座標設置標記SMRK,從畫像再次測量設置的標記SMRK之座標,依此以合成後的畫像一起歸還。因在此的畫像之失真依存於攝像裝置之透鏡,故將最初的轉換時之轉換(第一失真補正)於實施後進行畫像合成,為了對準全體的座標,以使用滑槽SCT上之標記SMRK為佳。即是,控制部CNT係使用座標標記CMRK而進行實際空間和畫像空間之補正之後,掌握另外設置在作為搬運路徑的滑槽SCT上的標記SMRK之座標。在此,滑槽SCT位於基板S之寬度方向之兩端部之外側。With this method, although it can be synthesized by the coordinate alignment between the images, it cannot be aligned with the actual space. Even if any image is aligned as a reference, the alignment with the coordinate space is not performed in advance, and when it is combined as it is, as shown in Fig. 11, it is an image adjacent to the image IV1 of the reference image IV2 and the image IV3 adjacent to the image IV2 are affected by the distortion of the image IV1. When the deviation caused by the distortion is adjacent to the image IV1 in order, the image IV3 at the farthest position is the most enlarged. In order to suppress the amount of enlargement, a mark SMRK is set at the known coordinates of the chute SCT, and the coordinates of the set mark SMRK are measured again from the image, and then the combined image is returned together. Because the distortion of the image here depends on the lens of the imaging device, the conversion (first distortion correction) at the time of the initial conversion is performed after the implementation of the image synthesis. In order to align the overall coordinates, the mark on the chute SCT is used. SMRK is better. That is, the control unit CNT uses the coordinate mark CMRK to correct the actual space and the image space, and then grasps the coordinates of the mark SMRK separately provided on the chute SCT as the conveyance path. Here, the chute SCT is located outside the both ends of the substrate S in the width direction.
如上述般,座標標記CMRK係於晶粒接合裝置所致的生產運轉前進行對準,作為調整作業而使一致。但是,隨著開工開始,藉由攝像裝置之自發熱和其飽和狀態,或攝像裝置間之熱分布的偏差,如圖14(b)所示般,有各攝像裝置之攝像視野些許持有各者的歷時位移之情況。在此,攝像裝置CM2之攝像視野IA2內之畫像相對於攝像裝置CM1之攝像視野IA1內之畫像往右偏離。即是,攝像裝置CM2往右位移。再者,以四角形之框架包圍之處表示各突片之左下的角部附近。在要求以μm的精度的接合裝置中,無法忽視該偏離。即使在施工中,也需要補正該些微的偏離。以下,針對補正該些微的偏離的方法,使用圖15予以說明。As described above, the coordinate mark CMRK is aligned before the production operation by the die bonding device, and is aligned as an adjustment operation. However, since the start of construction, due to the self-heating and saturation of the imaging devices, or the deviation of the heat distribution between the imaging devices, as shown in Figure 14(b), the imaging field of view of each imaging device has slightly different The diachronic displacement of the person. Here, the image in the imaging field of view IA2 of the camera device CM2 deviates to the right from the image in the imaging field of view IA1 of the camera device CM1. That is, the imaging device CM2 is shifted to the right. Furthermore, the place surrounded by the quadrangular frame indicates the vicinity of the lower left corner of each protruding piece. This deviation cannot be ignored in a bonding device that requires micrometer precision. Even during construction, the slight deviation needs to be corrected. Hereinafter, the method of correcting this slight deviation will be described using FIG. 15.
如上述般,有當在連續施工中產生攝像裝置間之偏離時,在持有已知的間距之基板S之突片間間距產生差異之情況。控制部CNT係藉由定期性地測量該已知的突片間距,檢測出攝像裝置之熱等的主要原因所致的固有位移。再者,即使控制部CNT定期性地測量已知的滑槽SCT上之標記SMRK間之距離,亦可以檢測攝像裝置之熱等的主要原因所致的固有的位移。As described above, when a deviation between the imaging devices occurs during continuous construction, there may be a difference in the pitch between the protrusions of the substrate S having a known pitch. The control unit CNT detects the inherent displacement caused by the heat of the imaging device and other factors by periodically measuring the known tab pitch. Furthermore, even if the control unit CNT periodically measures the distance between the marks SMRK on the known chute SCT, it can also detect the inherent displacement caused by the heat of the imaging device.
於檢測該位移之時,控制部CNT係使用基板S上之定位用目標標記TM等之特徵標記。而再次計算將畫像予以合成轉換的投影轉換行列或仿射轉換行列。此時,求出的投影轉換行列或仿射轉換行列可以進行畫像之接合,但是如圖15(a)所示般,有無法進行畫像空間和實際空間之匹配的狀態之情況。因此,控制部CNT係使用最初測量的滑槽SCT上之標記SMRK,以其座標為基準而進行再次轉換。依此,取得圖15(b)所示般的合成畫像。When detecting the displacement, the control unit CNT uses a feature mark such as a positioning target mark TM on the substrate S. And again calculate the projection conversion ranks or the affine conversion ranks for synthesizing and transforming the image. At this time, the calculated projection conversion ranks or affine conversion ranks can be used to join images, but as shown in Fig. 15(a), there may be cases where the image space and the actual space cannot be matched. Therefore, the control unit CNT uses the mark SMRK on the chute SCT measured initially, and performs conversion again based on its coordinates. In this way, a composite image as shown in Figure 15(b) is obtained.
另外,由於基板P之厚度(基板P之上面之高度)使得倍率變化,高度改變時,校準變得困難。使用圖16及圖17說明減輕基板之厚度之影響的手法。In addition, since the thickness of the substrate P (the height of the upper surface of the substrate P) causes the magnification to change, calibration becomes difficult when the height is changed. The method of reducing the influence of the thickness of the substrate will be explained using FIGS. 16 and 17.
圖16為說明改變校正板之高度之方法的圖,圖16(a)表示基板被搬運且被載置於接合台上而被配置的狀態,圖16(b)表示校正板之上下移動的剖面圖。圖17為說明設置在滑槽之標記的圖,圖17(a)為表示基板被搬運且被載置於接合台上之狀態的剖面圖,圖17(b)為設置標記之滑槽之上視圖,圖17(b)為在其他例中設置標記之滑槽的剖面圖。Fig. 16 is a diagram illustrating a method of changing the height of the calibration plate. Fig. 16(a) shows a state where the substrate is transported and placed on the bonding table and arranged, and Fig. 16(b) shows a cross section of the calibration plate moving up and down picture. Fig. 17 is a diagram illustrating the marks placed on the chute, Fig. 17(a) is a cross-sectional view showing the state where the substrate is conveyed and placed on the bonding table, and Fig. 17(b) is on the chute where the mark is placed View, Figure 17(b) is a cross-sectional view of a chute with a mark set in another example.
控制部CNT係為了對應於高度位移,故使校正板CP上下微動而在每高度取得投影轉換行列。控制部CNT係算出已知之基板之厚度或漿糊高度,從晶粒厚度等算出校準圖案位置或檢查視野位置之預測高度,自動選擇要使用保持在每高度的哪個投影轉換行列。控制部CNT係在相鄰接之攝像裝置間之重複區域,進行基板上之相同點的辨識,測量高度。控制部CNT從其測量值自動選擇所使用的投影轉換行列。In order to correspond to the height displacement, the control unit CNT slightly moves the correction plate CP up and down to obtain a projection conversion row for each height. The control unit CNT calculates the thickness of the known substrate or the height of the paste, calculates the position of the calibration pattern or the predicted height of the inspection view position from the thickness of the crystal grains, etc., and automatically selects which projection conversion row to use for each height. The control unit CNT is in the overlapping area between the adjacent imaging devices to identify the same point on the substrate and measure the height. The control unit CNT automatically selects the projection conversion rank to be used from the measured value.
具體而言,在藉由最初的校準板CP進行的補正時,如圖16(b)所示般,使設置有校正板CP之接合台AS上下移動,在接合台AS之每高度測量校正板CP之交點的座標。接合台之上下機構被構成為能夠以μm單位上下移動。Specifically, at the time of correction by the first calibration plate CP, as shown in FIG. 16(b), the bonding table AS provided with the calibration plate CP is moved up and down, and the calibration plate is measured at every height of the bonding table AS The coordinates of the intersection of CP. The up and down mechanism of the bonding table is configured to be able to move up and down in units of μm.
再者,以設置在滑槽SCT上之標記SMRK設為與基板P之上面之高度相同的高度為佳。如圖17(a)、(b)所示般,在例如滑槽SCT成形深度及直徑不同的孔(穴)。表示標記SMRK之孔即使如圖17(c)所示般,依每深度個別設置亦可。標記SMRK若為基板P之上面和高度一致時,即使為孔亦可。Furthermore, it is preferable that the mark SMRK provided on the chute SCT is set to the same height as the height of the upper surface of the substrate P. As shown in Figs. 17(a) and (b), for example, holes (cavities) of different depths and diameters are formed in the chute SCT. Even if the hole with the mark SMRK is shown in Figure 17(c), it can be set individually for each depth. If the mark SMRK is the same as the upper surface of the substrate P and the height, it may be a hole.
若藉由實施型態時,具有以下一個或複數效果。 (a)因可以從幾乎正上方觀看各攝像對象物,故能夠防止在單純低倍率光學系統產生的畫像之高度方向在視野邊緣傾斜之情形。 (b)因可以檢測由於攝像裝置之熱等的主要原因所產生的固有位移,可以在晶粒接合器之運轉動作中實施攝像裝置之補正,故能夠減輕攝像裝置之歷時位移之影響。 (c)因可以對應於高度位移,故不會受到由於基板之品種所致的厚度之變化的影響,故能夠減輕品種不同的影響。 (d)藉由至少上述(a)~(c)中之任一者,可以定位精度之穩定化、檢查之穩定化。If implemented, it has one or more of the following effects. (a) Since each imaging object can be viewed from almost directly above, it is possible to prevent the height direction of an image produced by a simple low-magnification optical system from tilting at the edge of the field of view. (b) Since the inherent displacement caused by the heat of the imaging device can be detected, the correction of the imaging device can be implemented during the operation of the die bonder, so the influence of the temporal displacement of the imaging device can be reduced. (c) Since it can correspond to the height displacement, it will not be affected by the change in thickness due to the type of the substrate, so the impact of different types can be reduced. (d) By at least any one of the above (a) to (c), it is possible to stabilize the positioning accuracy and stabilize the inspection.
(變形例) 以下,針對實施型態之代表性的變形例予以例示。在以下之變形例之說明中,針對具有與在上述實施例中說明者相同的構成及功能之部分,設為能夠使用與上述實施例相同之符號者。而且,針對如此之部分的說明,設為能夠在技術性不矛盾之範圍內,適當援用在上述實施例中之說明者。再者,能夠在技術性不矛盾之範圍內,適當、複合性地適用上述實施例之一部分及複數變形例之全部或一部分。(Modification) Hereinafter, a representative modification example of the implementation form is illustrated. In the description of the following modification examples, the parts having the same configuration and function as those described in the above-mentioned embodiment are assumed to be able to use the same symbols as those in the above-mentioned embodiment. Moreover, the description of such a part is assumed to be capable of appropriately quoting the description in the above-mentioned embodiment within a technically non-contradictory range. Furthermore, it is possible to appropriately and compoundly apply all or a part of a part of the above-mentioned embodiment and a plurality of modifications within the scope of no technical contradiction.
圖18為針對變形例中之攝像裝置之多重化予以說明的斜視圖。在實施型態中,雖然說明以複數攝像裝置攝像基板S之寬度方向之1列之攝像對象物之例,但是即使在基板S之長度方向也配置複數攝像裝置,即是將複數攝像裝置配置成格子狀,攝像複數列之攝像對象物亦可。FIG. 18 is a perspective view explaining the multiplexing of the imaging device in the modified example. In the embodiment, although an example is described in which a plurality of imaging devices are used to image objects in one column in the width direction of the substrate S, even if the plurality of imaging devices are arranged in the length direction of the substrate S, the plurality of imaging devices are arranged as Grid-shaped, multiple rows of imaging objects can also be captured.
例如,如圖18所示般,配置四列攝像裝置群CM10~CM40,各攝像裝置群分別具有配置成一列的實施型態之四台之攝像裝置CM1~CM4,16台之攝像裝置被配置成格子狀。在此,在基板S,一列六個攝像對象部被配置五列,相鄰接的攝像裝置之攝像視野重複。For example, as shown in Fig. 18, four rows of camera device groups CM10~CM40 are arranged, and each camera device group has four camera devices CM1 to CM4 of the implementation type arranged in a row, and 16 camera devices are arranged as Lattice. Here, on the substrate S, six imaging target portions in one row are arranged in five rows, and imaging fields of adjacent imaging devices overlap.
如圖18所示般,因不僅基板S之第一列的全攝像對象物,也並行攝像至第二列之後的第數列為止的全攝像對象物,可以辨識合成的畫像,故比起實施型態能夠減少移動基板S而攝像的次數。 [實施例]As shown in Fig. 18, since not only the entire imaging object in the first row of the substrate S but also the entire imaging object in the second row and subsequent rows can be scanned in parallel, the synthesized image can be recognized, so it is compared with the implementation type. The state can reduce the number of times of moving the substrate S and imaging. [Example]
針對適用上述實施型態的實施例以下說明。圖19為表示在實施例中之晶粒接合器之概略的上視圖。圖20為從圖19中之箭頭A方向觀看時,說明拾取頭及接合頭之動作的圖。The following description is directed to an embodiment to which the above-mentioned implementation type is applied. Fig. 19 is a top view showing the outline of the die bonder in the embodiment. Fig. 20 is a diagram illustrating the operation of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 19.
晶粒接合器10大致具有供給安裝於基板S之晶粒D的晶粒供給部1、拾取部2、中間平台部3、預成部9、接合部4、搬運部5、基板供給部6、基板搬出部7、監視且控制各部之動作的控制部8。Y軸方向係晶粒接合器10之前後方向,X軸方向為左右方向。晶粒供給部1被配置在晶粒接合器10之前方側,接合部4被配置在深側。在此,在基板S形成成為最終一封裝體的複數製品區域(以下,稱為封裝區域P)。例如,基板S為引線框架之情況,封裝區域P具有晶粒D被載置的突片。The die bonder 10 roughly has a
首先,晶粒供給部1係供給安裝於基板S之封裝區域P的晶粒D。晶粒供給部1具有保持晶圓11之晶圓保持台12和以從晶圓11上推晶粒D之虛線所示的剝離單元13。晶粒供給部1係藉由無圖示之驅動手段在XY軸方向移動,使拾取之晶粒D移動至剝離單元13之位置。First, the
拾取部2具有拾取晶粒D之拾取頭21、使拾取頭21移動至Y軸方向之拾取頭之Y驅動部23,和使夾頭22升降、旋轉及X軸方向移動的無圖示的各驅動部,和掌握從晶圓11拾取的晶粒D之拾取位置的晶圓辨識攝影機24。拾取頭21具有將被上推的晶粒D吸附保持在前端的夾頭22(也參照圖14),從晶粒供給部1拾取晶粒D,載置於中間平台31。拾取頭21具有使夾頭22升降、旋轉及X方向移動的無圖示之各驅動部。The pick-up
中間平台部3具有暫時性地載置晶粒D之中間平台31,和用以辨識中間平台31上之晶粒D的平台辨識攝影機32。The
預成部9具有注射器91和使注射器91在Y方向及Z方向移動的驅動器93,和作為掌握注射器91之塗佈位置等之攝像裝置的黏接劑辨識攝影機94。在此,黏接劑辨識攝影機94係例如實施型態之被多重化的攝像裝置CM1~ CM4,攝像裝置CM1~CM4分別被構成為使用照明裝置LD而進行攝像。預成部9係以注射器91對藉由搬運部5被搬運來的基板S塗佈環氧樹脂等之漿糊狀黏接劑。注射器91係內部被封入漿糊狀黏接劑,被構成為藉由空氣壓,漿糊狀黏接劑從噴嘴前端被推出至基板S而被塗佈。基板S例如以橫向一列排列複數個單位引線框架而一連串地被連貫設置的多重引線框架之情況,在單位引線框架之每突片塗佈漿糊狀黏接劑。The preforming
接合部4係從中間平台31拾取晶粒D,接合於被搬運而來的基板S之塗佈有漿糊狀黏接劑之封裝區域P上。接合部4具備與拾取頭21相同將晶粒D吸附保持於前端的夾頭42(也參照圖20)的接合頭41、使接合頭41在Y軸方向移動之Y動部43,和攝影基板S之封裝區域P之位置辨識標記(無圖示),且辨識接合位置之基板辨識攝影機44。在此,基板辨識攝影機44係例如實施型態之被多重化的攝像裝置CM1~CM4,攝像裝置CM1~CM4分別被構成為使用照明裝置LD而進行攝像。藉由如此之構成,接合頭41根據平台辨識攝影機32之攝影資料而補正拾取位置、姿勢,從中間平台31拾取晶粒D,且根據基板辨識攝影機44之攝影資料將晶粒D接合於基板。The
搬運部5具有抓取搬運基板S之基板搬運爪51和基板S移動之搬運通道52。基板S係藉由利用沿著搬運通道52而設置之無圖示滾珠輪桿驅動被設置在搬運通道52之基板搬運爪51之無圖示的螺帽而移動。藉由如此之構成,基板S係從基板供給部6沿著搬運通道52而移動至接合位置,於接合後,移動至基板搬出部7,將基板S交給至基板搬出部7。The conveying
接著,針對晶粒供給部1之構成,使用圖21進行說明。圖21為表示圖19之晶粒供給部之主要部位的概略剖面圖。Next, the structure of the crystal
晶粒供給部1具備在水平方向(XY軸方向)移動的晶圓保持台12,在上下方向移動的剝離單元13。晶圓保持台12具備保持晶圓環14之擴張環15,和將被固定在晶圓環14的切割膠帶16定位成水平的支持環17。在晶圓11中,被切割成網眼狀的晶粒D被黏接固定於切割膠帶16。剝離單元13被配置在支持環17之內側。The
晶粒供給部1係於晶粒D之上推時,使保持晶圓環14之擴充環15下降。其結果,被保持在晶圓環14之切割膠帶16被拉長,晶粒D之間隔變寬,藉由剝離單元13時而從晶粒D下方上推切割膠帶16時而進行水平移動,而提升晶粒D之拾取性。When the
如圖22所示般,控制系統80具備控制部8和驅動部86和訊號部87和光學系統88。控制部8大致具有主要以CPU(Central Processor Unit)所構成之控制、運算裝置81、記憶裝置82、輸入輸出裝置83、匯流排線84、電源部85。記憶裝置82具有以記憶有處理程式等之RAM所構成之主記憶裝置82a,和以記憶有控制所需之控制資料或畫像等資料等之HDD所構成的輔助記憶裝置82b。輸入輸出裝置83具有顯示裝置狀態或資訊等之螢幕83a,和輸入操作員之指示的觸控面板83b,和操作螢幕的滑鼠83c,和擷取來自光學系統88之畫像資料的畫像擷取裝置83d。再者,輸入輸出裝置83具有控制晶粒供給部1之XY平台(無圖示)或接合頭台之ZY驅動軸等之驅動部86之馬達控制裝置83e,和從各種感測器訊號或照明裝置等之開關等之訊號部87擷取或控制訊號的I/O訊號控制裝置83f。光學系統88包含圖20所示的晶圓辨識攝影機24、黏接劑辨識攝影機94、平台辨識攝影機32、基板辨識攝影機44。控制、運算裝置81經由匯流排線84擷取所需的資料,進行運算,且進行拾取頭41等之控制,或將資訊送至螢幕83a等。As shown in FIG. 22, the
控制部8係經由畫像擷取裝識83d而將以光學系統88攝像到的畫像資料保存於記憶裝置82。依據根據保存的畫像資料而編程的軟體,使用控制、運算裝置81而進行晶粒D及基板S之定位,漿糊狀黏接劑之塗佈圖案之檢查以及晶粒D及基板S之表面檢查。根據控制、運算裝置81所算出之晶粒D及基板S之位置,藉由軟體經由馬達控制裝置83e使驅動部86移動。藉由該製程,進行晶圓11上之晶粒D之定位,以晶粒供給部1及晶粒接合部4之驅動部進行動作,將晶粒D接合於基板S上。在光學系統88使用的辨識攝影機係灰階、彩色攝影機等,使光強度予以數值化。The
接著,針對使用與實施例有關之晶粒接合器的半導體裝置之製造方法,使用圖23進行說明。圖23為表示使用圖19之晶粒接合器的半導體裝置之製造方法之流程圖。Next, a method of manufacturing a semiconductor device using the die bonder related to the embodiment will be described with reference to FIG. 23. FIG. 23 is a flowchart showing a method of manufacturing a semiconductor device using the die bonder of FIG. 19;
(步驟S51:晶圓、基板搬入工程)
將保持貼附從晶圓11被分割之晶粒D的切割膠帶16的晶圓環14儲存於晶圓卡匣(無圖示),搬入至晶粒接合器10。控制部8係將晶圓環14從填充有晶圓環14之晶圓卡匣供給至晶粒供給部1。再者,準備基板S,搬入至晶粒接合器10。控制部8係以基板供給部6將基板S安裝於基板搬運爪51。(Step S51: Wafer and substrate loading process)
The
(步驟S52:拾取工程)
控制部8係藉由晶圓保持台12以可以從晶圓環14拾取所期望的晶粒D之方式,移動晶圓環14,根據藉由晶圓辨識攝影機24攝影到的資料進行定位及表面檢查。控制部8係藉由剝離單元13從切割膠帶剝離晶粒D。(Step S52: Pick up the project)
The
控制部8係藉由拾取器21從晶圓11拾取被剝離的晶粒D。如此一來,從切割膠帶16被剝離的晶粒D被吸附、保持在拾取頭21之夾頭22而被搬運至下一個工程(步驟BS13)。而且,當將晶粒D從搬運至下一個工程的夾頭22返回至晶粒供給部1時,依照上述順序,接著的晶粒D從切割膠帶16被剝離,之後依照相同的順序,晶粒D從切割膠帶16一個一個地被剝離。The
(步驟S53:接合工程)
控制部8係藉由黏接劑辨識攝影機94而取得塗佈前之基板S之表面的畫像而確認應塗佈漿糊狀黏接劑的表面。若在應塗佈面無產生問題時,控制部8係從注射器91對藉由搬運部5被搬運的基板S塗佈漿糊狀黏接劑。基板S為多重引線框架之情況,對所有的突片塗佈漿糊狀黏接劑。控制部8係以黏接劑辨識攝影機94再次確認塗佈後漿糊狀黏接劑是否正確地被塗佈,檢查被塗佈的漿糊狀黏接劑。若塗佈無產生問題時,控制部8係藉由搬運部將基板S搬運至接合台BS,根據藉由基板辨識攝影機44攝影到的畫像資料而進行定位。(Step S53: Joining process)
The
控制部8係將從晶圓11藉由拾取頭21拾取到的晶粒D載置於中間平台31,以接合頭41從中間平台31再次拾取晶粒D,接合於被定位的基板S。控制部8係根據藉由基板辨識攝影機44攝影到的畫像資料,進行晶粒D是否被接合於期望的位置等的檢查。The
(步驟S54:基板搬出工程)
控制部8係以基板搬出部7從基板搬運爪51取出被接合晶粒D的基板S。從晶粒接合器10搬出基板S。(Step S54: Board unloading process)
The
以上,雖然根據實施型態、實施例及變形例對本發明者所創作岀之發明進行具體性說明,但是本發明並不限定於上述實施型態、變形例及實施例,當然可以做各種變更。In the above, although the invention created by the present inventors has been specifically described based on the implementation types, embodiments, and modifications, the present invention is not limited to the foregoing implementation types, modifications, and embodiments, and various modifications can of course be made.
例如,在實施例中,雖然說明以預成部在基板塗佈漿糊狀黏接劑之例,但是將晶粒黏接於基板之黏接劑,即使使用被黏接於晶圓11和切割膠帶16之間的被稱為晶粒黏接膜(DAF)的薄膜狀之黏接材料,以取代藉由注射器91被塗佈的漿糊狀黏接劑亦可。DAF適用於在基板S上之晶粒上載置許多片晶粒而構成的疊層封裝體。For example, in the embodiment, although the example of applying a paste-like adhesive on the substrate with the preformed part is described, the adhesive for bonding the die to the substrate is used even if the adhesive is bonded to the
再者,在實施例中,雖然說明在晶粒供給部1和接合部4之間,設置中間平台部3,將以拾取頭21從晶粒供給部1拾取到的晶粒D載置於中間平台31,以接合頭41從中間平台31再次拾取晶粒D,接合於被搬運來的基板S之例,但是即使以接合頭41將從晶粒供給部1拾取到的晶粒D接合於基板S亦可。Furthermore, in the embodiment, although it is described that an
10:晶粒接合器(晶粒接合裝置) AA:接合區域 CM1~CM4:攝像裝置 CNT:控制部 S:基板 SCT:滑槽(搬運路徑)10: Die Bonder (Die Bonding Device) AA: Joint area CM1~CM4: Camera device CNT: Control Department S: substrate SCT: Chute (transport path)
[圖1(a)]為表示通常視野光學系統的斜視圖,[圖1(b)]表示為寬視野光學系統的斜視圖。 [圖2(a)]為使用微透鏡之寬視野光學系統之概念圖,[圖2(b)]為使用遠心透鏡之寬視野光學系統之概念圖。 [圖3(a)]為表示漿糊之立體形狀之影像的圖,[圖3(b)]為表示以微透鏡在寬域觀看基板之時的漿糊上之譜線的圖。 [圖4(a)]係針對實施型態之攝像裝置之多重化的上視圖,[圖4(b)]為在圖4(a)從箭號A方向觀看之時的側視圖。 [圖5]為針對用於實施型態之攝像裝置的照明裝置予以說明的圖。 [圖6]為針對複數攝像裝置之攝像視野之重複而予以說明的上視圖。 [圖7]為在圖6中從箭號A方向觀看之時的側視圖。 [圖8]為針對攝像視野之重複量予以說明的圖。 [圖9]為說明影像鑲嵌和座標匹配的圖。 [圖10]為說明使用校正板的影像鑲嵌和座標轉換的示意圖。 [圖11]為說明失真的圖。 [圖12]為表示仿射轉換及投影轉換之轉換行列式的圖。 [圖13]為說明藉由基板之目標模型的影像鑲嵌和座標轉換的圖。 [圖14]為說明攝像裝置之歷時位移之影響的圖。 [圖15]為說明空間再補正的圖。 [圖16]為改變校正板之高度之方法的圖。 [圖17]為說明設置在滑槽的標記的圖。 [圖18]為針對變形例中之攝像裝置之多重化予以說明的斜視圖。 [圖19]為表示在實施例中之晶粒接合器之概略的上視圖。 [圖20]為從圖19中之箭頭A方向觀看時,說明拾取頭及接合頭之動作的圖。 [圖21]為表示圖19之晶粒供給部之主要部位的概略剖面圖。 [圖22]為說明圖19之晶粒接合器之控制系統之概略構成的方塊圖。 [圖23]係表示半導體裝置之製造方法的流程圖。[Fig. 1(a)] is an oblique view showing a normal field optical system, and [Fig. 1(b)] is an oblique view showing a wide field optical system. [Figure 2(a)] is a conceptual diagram of a wide-field optical system using micro lenses, [Figure 2(b)] is a conceptual diagram of a wide-field optical system using telecentric lenses. [Fig. 3(a)] is a diagram showing the image of the three-dimensional shape of the paste, [Fig. 3(b)] is a diagram showing the spectral lines on the paste when the substrate is viewed in a wide area with a microlens. [Fig. 4(a)] is a top view for the multiplexing of the camera device of the implementation type, [Fig. 4(b)] is a side view when viewed from the direction of arrow A in Fig. 4(a). Fig. 5 is a diagram for explaining the lighting device used in the imaging device of the implementation type. [FIG. 6] It is a top view explaining the repetition of the imaging field of view of a plurality of imaging devices. [Fig. 7] is a side view when viewed from the direction of arrow A in Fig. 6. [Fig. [Fig. 8] A diagram for explaining the amount of overlap of the imaging field of view. [Figure 9] is a diagram illustrating image mosaic and coordinate matching. [Figure 10] is a schematic diagram illustrating image mosaic and coordinate conversion using the calibration plate. [Fig. 11] is a diagram explaining distortion. [FIG. 12] A diagram showing the conversion determinants of affine conversion and projection conversion. [Figure 13] is a diagram illustrating the image mosaic and coordinate conversion of the target model by the substrate. [Fig. 14] A diagram illustrating the influence of the temporal displacement of the imaging device. [Fig. 15] is a diagram for explaining space re-correction. [Figure 16] is a diagram showing how to change the height of the calibration plate. [Fig. 17] A diagram for explaining the marks provided on the chute. Fig. 18 is a perspective view explaining the multiplexing of the imaging device in the modified example. [Fig. 19] is a top view showing the outline of the die bonder in the embodiment. [Fig. 20] is a diagram explaining the operation of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 19; [Fig. 21] is a schematic cross-sectional view showing the main part of the crystal grain supply part of Fig. 19. [Fig. [FIG. 22] A block diagram illustrating the schematic configuration of the control system of the die bonder of FIG. 19. [FIG. 23] A flowchart showing a method of manufacturing a semiconductor device.
AA11~AA16:接合區域 AA11~AA16: Joint area
CM1~CM4:攝像裝置 CM1~CM4: Camera device
CNT:控制部 CNT: Control Department
S:基板 S: substrate
IA1,IA2:攝像視野 IA1, IA2: camera field of view
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