TWI798619B - Die bonding device and method for manufacturing semiconductor device - Google Patents
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Abstract
[課題]提供能提升複數攝像對象物之攝像條件之一致性的技術。 [解決手段]晶粒接合裝置具備:搬運路徑,其係用以搬運基板;複數攝像裝置,其係沿著基板之寬度方向以一列地被固定配設在搬運路徑之上方;及控制部,其係被構成為以複數攝像裝置攝像位於基板上的沿著寬度方向的一列複數接合區域而取得複數畫像,根據所取得的複數畫像而生成合成畫像,根據合成畫像而辨識接合區域之攝像對象物。各攝像裝置之攝像視野在基板上重複,重複的攝像視野被構成為大於接合區域。[Problem] Provide a technology that can improve the uniformity of imaging conditions of multiple imaging objects. [Solution] The die bonding apparatus includes: a transport path for transporting the substrate; a plurality of imaging devices fixedly arranged above the transport path in a row along the width direction of the substrate; and a control unit for It is configured to capture multiple images of a row of multiple bonded regions along the width direction on the substrate by a plurality of imaging devices, generate a composite image from the obtained multiple images, and recognize the imaged object in the bonded region based on the composite image. The imaging field of view of each imaging device overlaps on the substrate, and the overlapping imaging field of view is configured to be larger than the bonding area.
Description
本揭示係關於晶粒接合裝置,例如能夠適用於以複數辨識攝影機攝像接合區域的晶粒接合器。The present disclosure relates to a die bonding device, for example, a die bonder that can be applied to a plurality of camera imaging bonding regions.
半導體裝置之製造工程之一部分具有在配線基板或引線框架等(以下,單稱為基板)載置半導體晶片(以下,單稱為晶粒)而組裝封裝體之工程,組裝封裝體之工程之一部分具有從半導體晶圓(以下,單稱為晶圓)分割晶粒之工程(切割工程),和將分割後的晶粒載置在基板上之接合工程。在接合工程中所使用的半導體製造裝置為晶粒接合器等之晶粒接合裝置。Part of the manufacturing process of semiconductor devices includes the process of mounting a semiconductor chip (hereinafter simply referred to as a die) on a wiring board or lead frame (hereinafter simply referred to as a substrate) and assembling a package, a part of the process of assembling a package It includes a process (dicing process) of dividing a die from a semiconductor wafer (hereinafter simply referred to as a wafer), and a bonding process of placing the divided die on a substrate. The semiconductor manufacturing equipment used in the bonding process is a die bonding device such as a die bonder.
晶粒接合器係以樹脂漿糊、焊料、鍍金作為接合材料,將晶粒接合(載置而予以黏接)在基板或已被接合之晶粒上的裝置。例如,在將晶粒接合於基板之表面的晶粒接合器中,重覆進行使用被安裝於接合頭之前端之被稱為夾頭的吸附噴嘴,從晶圓吸附晶粒而進行拾取,且載置於基板上之特定位置,賦予推壓力,同時藉由加熱接合材,進行接合的動作(作業)。A die bonder is a device that uses resin paste, solder, and gold plating as bonding materials to bond (place and bond) die on a substrate or bonded die. For example, in a die bonder that bonds a die to the surface of a substrate, it is repeatedly picked up by suctioning a die from a wafer using a suction nozzle called a chuck attached to the front end of the bonding head, and The action (operation) of bonding by placing on a specific position on the substrate, applying a pressing force, and heating the bonding material at the same time.
使用樹脂作為接合材料之情況,使用Ag環氧及丙烯酸等之樹脂漿糊作為黏接劑(以下,稱為漿糊狀黏接劑)。將晶粒黏接於基板的漿糊狀黏接劑被封入至注射器內,該注射器相對於基板上下動作,射出漿糊狀黏接劑而予以塗佈。即是,藉由封入有漿糊狀黏接劑的注射器在特定位置塗佈特定量漿糊狀黏接劑,晶粒被壓接、烘烤而被黏接於其漿糊狀黏接劑上。在注射器之附近,安裝辨識攝影機,藉由該辨識攝影機,確認塗佈漿糊狀黏接劑之位置而進行定位,再者,確認被塗佈之漿糊狀黏接劑是否以特定形狀且僅特定量被塗佈在特定位置。When using a resin as a bonding material, a resin paste such as Ag epoxy or acrylic is used as an adhesive (hereinafter referred to as a paste adhesive). The paste-like adhesive for bonding the die to the substrate is sealed in the syringe, and the syringe moves up and down relative to the substrate to eject and apply the paste-like adhesive. That is, by applying a specific amount of paste-like adhesive at a specific position with a syringe filled with paste-like adhesive, the die is pressed, baked, and bonded to its paste-like adhesive . Install a recognition camera near the syringe, and use the recognition camera to confirm the position of the paste-like adhesive for positioning. Furthermore, it is confirmed whether the applied paste-like adhesive is in a specific shape and only A specific amount is applied at a specific location.
再者,在接合頭之附近安裝辨識攝影機,以該辨識攝影機,確認晶粒被接合的基板之位置而進行定位,再者,確認被接合的晶粒是否被接合於特定位置。 [先前技術文獻] [專利文獻]Furthermore, an identification camera is installed near the bonding head, and the identification camera is used to confirm the position of the substrate on which the die is bonded for positioning, and furthermore, it is confirmed whether the bonded die is bonded at a specific position. [Prior Art Literature] [Patent Document]
[專利文獻1]日本特開2013-197277號公報[Patent Document 1] Japanese Unexamined Patent Publication No. 2013-197277
[發明所欲解決之課題][Problem to be Solved by the Invention]
當以使用非遠心透鏡之一個攝像裝置攝像複數攝像對象物時,遠離攝像裝置之正下方的攝像對象物成為傾斜攝像,而看成立體形狀的側面。 本揭示之課題係提供能提升複數攝像對象物之攝像條件之一致性的技術。 其他之課題和新穎之特徵從本說明書之記載及附件圖面明顯可知。 [用以解決課題之手段]When a single imaging device using a non-telecentric lens is used to image a plurality of imaging objects, the imaging objects located far away from the imaging device directly below are imaged obliquely, and are viewed as side surfaces of a three-dimensional shape. The subject of this disclosure is to provide a technology capable of improving the uniformity of imaging conditions of a plurality of imaging objects. Other problems and novel features are evident from the description in this manual and the attached drawings. [Means to solve the problem]
若簡單說明本揭示中代表性之內容的概要則如同下述般。 即是,晶粒接合裝置具備:搬運路徑,其係用以搬運基板;複數攝像裝置,其係沿著上述基板之寬度方向以一列地被固定配設在上述搬運路徑之上方;及控制部,其係被構成為以上述複數攝像裝置攝像位於上述基板上的沿著上述寬度方向的一列複數接合區域而取得複數畫像,根據所取得的複數上述畫像而生成合成畫像,根據上述合成畫像而辨識上述接合區域之攝像對象物,各攝像裝置之攝像視野在上述基板上重複,重複的上述攝像視野被構成為大於上述接合區域。 [發明之效果]The summary of the representative content in this disclosure is briefly described as follows. That is, the die bonding apparatus includes: a transport path for transporting the substrate; a plurality of imaging devices fixedly arranged above the transport path in a row along the width direction of the substrate; and a control unit, It is configured to use the above-mentioned multiple imaging device to capture multiple images of a series of multiple bonding regions located on the above-mentioned substrate along the above-mentioned width direction, generate a composite image based on the obtained multiple images, and recognize the above-mentioned For the object to be imaged in the bonding area, the imaging field of view of each imaging device overlaps on the substrate, and the overlapping imaging field of view is configured to be larger than the bonding area. [Effect of Invention]
若藉由上述晶粒接合裝置時,能夠提升複數攝像對象物之攝像條件之一致性。By using the above-mentioned die bonding device, the uniformity of imaging conditions of a plurality of imaging objects can be improved.
以下,針對實施型態、變形例及實施例使用圖面進行說明。但是,在以下之說明中,有對相同構成要素賦予相同符號,省略重覆說明之情形。另外,為了使說明更明確,雖然有圖面比起實際態樣,針對各部之寬度、厚度、形狀等,以示意性表示之情形,但是此僅為一例,並非用以限定本發明之解釋。Hereinafter, embodiments, modifications, and examples will be described using drawings. However, in the following description, the same reference numerals are given to the same components, and overlapping descriptions may be omitted. In addition, in order to clarify the description, although the width, thickness, shape, etc. of each part may be schematically shown in the drawing compared with the actual state, this is only an example and is not intended to limit the interpretation of the present invention.
首先,使用圖1~圖3,針對本發明者們探討的技術予以說明。圖1(a)為表示通常視野光學系統的斜視圖,圖1(b)表示為寬視野光學系統的斜視圖。First, using FIGS. 1 to 3 , the technique studied by the present inventors will be described. FIG. 1( a ) is a perspective view showing a normal field of view optical system, and FIG. 1( b ) is a perspective view showing a wide field of view optical system.
在依序進行基板S之定位、接合(晶粒接合或漿糊塗佈)、檢查的動作中,如圖1(a)所示般,當使用使用低解像度之攝像裝置CML之通常視野光學系統時,因僅攝像比一個接合區域AA略大的區域,故需要僅有接合區域AA之數量的攝像及畫像辨識。在此,作為一例,表示在基板S,具有一列6個的接合區域AA,具有五列的接合區域之例。低解像度之攝像裝置係僅在比一個接合區域略大的區域才能以足夠的解像度攝像的攝像裝置,例如解像度約30萬~約130萬畫素之攝像裝置。In the sequential operations of positioning, bonding (die bonding or paste coating), and inspection of the substrate S, as shown in FIG. , since only an area slightly larger than one joining area AA is captured, imaging and image recognition of only the number of joining areas AA are required. Here, as an example, an example in which the substrate S has six bonding regions AA in one row and five bonding regions in five rows is shown. A low-resolution imaging device is an imaging device that can capture images with sufficient resolution only in an area slightly larger than a joint area, such as an imaging device with a resolution of about 300,000 to about 1.3 million pixels.
因此,如圖1(a)所示般,必須重覆進行使攝像裝置CML在基板S之寬度方向(Y軸方向)移動,而進行其列中之其他的接合區域之攝像及畫像辨識,並進行根據其畫像辨識的處理之動作。另外,一列的攝像後係將基板S在基板搬運方向(X軸方向)移動而進行下一列的攝像。Therefore, as shown in FIG. 1(a), it is necessary to repeatedly move the imaging device CML in the width direction (Y-axis direction) of the substrate S to perform imaging and image recognition of other bonding regions in the row, and The action of performing processing based on its image recognition. In addition, after the imaging of one row, the imaging of the next row is performed by moving the board|substrate S in a board|substrate conveyance direction (X-axis direction).
因此,需要使攝像裝置CML之支持構件(無圖示)在基板S之寬度方向移動的移動機構,攝像裝置CML之支持機構複雜化及大型化,變得昂貴。再者,因為需要用以朝攝像裝置CML之寬度方向的移動時間,並且隨著支持構件之移動產生的振動所致的攝像裝置CML之搖晃平息為止之攝像的等待時間,故無法使晶粒接合高速化。或是,為了防止振動,需要振動防止機構,並且晶粒接合變得昂貴。再者,具有在接合區域之上空且攝像裝置之下方往返動作的機構部之情況,必須斟酌藉由該機構部不遮蔽攝像視野的時機進行攝像。藉由確保該攝像時機,無法使晶粒接合高速化。Therefore, a movement mechanism for moving a supporting member (not shown) of the imaging device CML in the width direction of the substrate S is required, and the supporting mechanism of the imaging device CML becomes complicated and large in size and expensive. Furthermore, because it takes time to move in the width direction of the imaging device CML, and the waiting time for imaging until the shaking of the imaging device CML caused by the vibration generated by the movement of the supporting member subsides, it is impossible to bond the die. High speed. Or, in order to prevent vibration, a vibration prevention mechanism is required, and die bonding becomes expensive. Furthermore, if there is a mechanism part that reciprocates above the bonding area and below the imaging device, it is necessary to consider the timing when the mechanism part does not block the imaging field of view. By securing this imaging timing, it is impossible to increase the speed of die bonding.
另一方面,不每次基板之搬運後的接合重複此,如圖1(b)所示般,當使用高解像度之攝像裝置CMH之寬視野光學系統時,基板S之所有接合區域(所有突片匯集一起)或在基板之寬度方向之至少1列之接合區域攝像且進行辨識,處理時間成為效率化,可以解決上述問題點。在此,高解像度之攝像裝置係指可以至少將基板S之寬度方向一列分之所有區域一次以足夠的解像度進行攝像的攝像裝置,例如解像度約500萬畫素以上的攝像裝置。一列包含複數接合區域,例如包含4個接合區域。On the other hand, this is not repeated every time the bonding after the substrate is transported. As shown in FIG. The above-mentioned problems can be solved by improving the efficiency of processing time by imaging and identifying at least one bonding area in the width direction of the substrate. Here, a high-resolution imaging device refers to an imaging device capable of capturing at least all areas of the substrate S divided by one row in the width direction at one time with a sufficient resolution, for example, an imaging device with a resolution of about 5 million pixels or more. One column includes a plurality of joint areas, for example, four joint areas.
但是,寬視野光學系統(寬域攝影機)有以下之問題點。針對該問題點,使用圖2及圖3予以說明。圖2(a)為使用微透鏡之寬視野光學系統之概念圖,圖2(b)為使用遠心透鏡之寬視野光學系統之概念圖。圖3(a)為表示漿糊之立體形狀之影像的圖,圖3(b)為表示以微透鏡在寬域觀看基板之時的漿糊上之譜線的圖。However, the wide-field optical system (wide-field camera) has the following problems. This problem will be described using FIG. 2 and FIG. 3 . Fig. 2(a) is a conceptual diagram of a wide-field optical system using a microlens, and Fig. 2(b) is a conceptual diagram of a wide-field optical system using a telecentric lens. FIG. 3( a ) is a diagram showing the image of the three-dimensional shape of the paste, and FIG. 3( b ) is a diagram showing spectral lines on the paste when the substrate is viewed over a wide area with a microlens.
(1)遠心性之確保 雖然即使單純地僅降低微透鏡之倍率,也成為寬域,但是成為越偏離視野之中心越從斜上方觀看的狀態,如圖2(a)所示般,雖然在視野中心之攝像對象物OBC中,看不見側面,但是在左側之攝像對象物OBL中,看得見右側面,在右側之攝像對象物OBR中,看得見左側面,看成立體形狀的側面。再者,倍率藉由攝像對象物OBL之高度而變化,當高度變化時,難以進行如對準。例如,被塗佈在基板之漿糊或被疊層在基板之晶粒由於位置不同高度有所不同。(1) Guarantee of telecentricity Even if the magnification of the microlens is simply reduced, the wide area can be obtained, but the more it deviates from the center of the field of view, the more it is viewed from obliquely above, as shown in FIG. In , the side surface is not visible, but the left side of the imaging object OBL is visible, and the left side of the right imaging object OBR is visible, which is seen as a side surface of a three-dimensional shape. Furthermore, the magnification varies with the height of the imaging object OBL, and when the height changes, it is difficult to perform such alignment. For example, the paste coated on the substrate or the die stacked on the substrate have different heights due to different positions.
該些問題點藉由使用遠心透鏡可以解決。因遠心透鏡係集光平行光,故在所有的攝像對象物看不見側面。但是,在此情況,如圖2(b)所示般,一般需要口徑大於想觀看的視野的透鏡,例如確保例如100mm見方的視野時,需要其對角的141mm以上之口徑,依此,焦點距離變長。將如此大型的透鏡安裝於晶粒接合裝置,從效率性之觀點來看不理想。These problems can be solved by using telecentric lenses. Since the telecentric lens collects the parallel light, the sides cannot be seen in all the objects to be photographed. However, in this case, as shown in Figure 2(b), generally a lens with a diameter larger than the desired field of view is required. For example, to ensure a field of view of, for example, a 100mm square, a diameter of 141mm or more at the diagonal is required. Accordingly, the focal point The distance becomes longer. Mounting such a large lens on a die bonding device is not ideal from the viewpoint of efficiency.
(2)在視野內中之均勻照明的照射 在使用非遠心透鏡而確保寬域之情況,在視野之端的一方成為從斜上方觀看之狀態。因為此在視野之右端和左端,或上端和下端中,方向成為相反,故照明之照射方向容易成為不均勻。再者,即使在照射使用遠心光之平行光的情況,在攝像視野內也難取得均勻照射的畫像。例如,如圖3(a)所示般,十字形狀地被塗佈在基板之漿糊狀黏接劑PA係中心部分較高,前端部分被形成較低。以微透鏡在寬域觀看圖3(a)所示般地被塗佈有漿糊狀黏接劑的基板之情況,如圖3(b)所示般,因從正上方觀看攝像視野之中央部,故較亮,因傾斜觀看周邊部,故較暗,再者,因漿糊狀黏接劑之高度不均勻,故漿糊狀黏接劑PA上之譜線移動。在此,攝像裝置之視野中心位於圖3(b)之畫像中心。在基板S具有一列6個的作為接合區域的突片TB,表示7列。在基板S之右側的四列的突片TB,塗佈漿糊狀黏接劑PA。(2) Irradiation of uniform illumination in the field of view When using a non-telecentric lens to secure a wide area, the one at the end of the field of view is viewed from obliquely above. Since the directions are opposite at the right and left ends of the field of view, or at the upper and lower ends, the irradiation direction of the illumination tends to be uneven. Furthermore, even in the case of irradiating parallel light using telecentric light, it is difficult to obtain a uniformly irradiated image within the imaging field of view. For example, as shown in FIG. 3( a ), the center part of the paste-like adhesive PA system coated on the substrate in a cross shape is higher, and the front part is formed lower. When viewing the substrate coated with paste-like adhesive as shown in Figure 3(a) with a microlens in a wide area, as shown in Figure 3(b), because the center of the imaging field of view is viewed from directly above The part is brighter, and the peripheral part is darker because it is viewed obliquely. Furthermore, because the height of the paste-like adhesive is not uniform, the spectral line on the paste-like adhesive PA moves. Here, the center of field of view of the imaging device is located at the center of the image in FIG. 3( b ). The board|substrate S has 6 tabs TB as a bonding area in a row, and shows 7 rows. On the four rows of tabs TB on the right side of the substrate S, the paste-like adhesive PA is applied.
接著,針對解決上述問題點的實施形態,使用圖4~圖5予以說明。圖4(a)係針對實施型態之攝像裝置之多重化的上視圖,圖4(b)為在圖4(a)從箭號A方向觀看之時的側視圖。圖5係針對用於實施型態之攝像裝置的照明裝置予以說明的圖,圖5(a)係照明裝置之剖面圖,圖5(b)為側視圖。Next, an embodiment for solving the above-mentioned problems will be described using FIGS. 4 to 5 . Fig. 4(a) is a top view of the multiplexing of the imaging device of the embodiment, and Fig. 4(b) is a side view when viewed from the direction of arrow A in Fig. 4(a). Fig. 5 is a diagram for explaining the lighting device used in the imaging device of the embodiment, Fig. 5(a) is a sectional view of the lighting device, and Fig. 5(b) is a side view.
作為解決上述問題點的實施型態,進行攝像裝置之多重化(立體化)。例如,如圖4所示般,在基板S之上方,將複數攝像裝置CM1~CM4在基板S之寬度方向(Y軸方向)排成一列並予以固定地配設。在此,攝像裝置CM1~ CM4之各者係與攝像裝置CML相同程度以上的解像度之攝像裝置,無法一次以足夠的解像度攝像基板S之寬度方向之一列分的全區域的攝像裝置。再者,即使攝像裝置CM1 ~CM4之各者使用遠心透鏡亦可,以使用微透鏡等之非遠心透鏡為佳。該些攝像裝置CM1~CM4係以相同高度在水平方向隔著特定間隔,各攝像裝置CM1~CM4之光軸彼此平行並且相對於基板S呈垂直。另外,即使使攝像裝置CM1~CM4之光軸在容許攝像視野中之失焦的範圍,從對基板S之垂直線稍微傾斜亦可。As an embodiment to solve the above-mentioned problems, multiplex (three-dimensional) imaging devices are performed. For example, as shown in FIG. 4 , above the substrate S, a plurality of imaging devices CM1 to CM4 are arranged in a row in the width direction of the substrate S (Y-axis direction) and fixedly arranged. Here, each of the imaging devices CM1 to CM4 is an imaging device having a resolution equal to or greater than that of the imaging device CML, and cannot capture an entire area divided into one column in the width direction of the substrate S at a time with a sufficient resolution. Furthermore, each of the imaging devices CM1 to CM4 may use a telecentric lens, but it is preferable to use a non-telecentric lens such as a microlens. The imaging devices CM1 - CM4 are at the same height at a certain interval in the horizontal direction, and the optical axes of the imaging devices CM1 - CM4 are parallel to each other and perpendicular to the substrate S. As shown in FIG. In addition, even if the optical axes of the imaging devices CM1 to CM4 are within the allowable out-of-focus range in the imaging field of view, they may be slightly inclined from the vertical line to the substrate S.
在本實施型態中,攝像裝置CM1~CM4之各者係攝像接合區域AA11~AA14之攝像對象物。再者,攝像裝置CM1~CM4之各者的攝像視野IA1~IA4不重複。再者,藉由將基板S在搬運方向(Y軸方向)移動,依序攝像剩下之列的攝像對象物。藉由使攝像裝置多重化,可以在攝像對象物之略正上方進行攝像,可以提升攝像視野內之照明之均勻性而進行檢查。再者,藉由使攝像裝置多重化,無須移動攝像裝置,可以取得與寬視野光學系統相同的處理效率。In the present embodiment, each of the imaging devices CM1 to CM4 images the imaging objects of the joining regions AA11 to AA14. Furthermore, the imaging fields of view IA1 to IA4 of each of the imaging devices CM1 to CM4 do not overlap. Furthermore, by moving the board|substrate S in a conveyance direction (Y-axis direction), the imaging target object of the remaining row is imaged sequentially. By multiplying the imaging device, imaging can be performed slightly directly above the imaging object, and the uniformity of illumination in the imaging field of view can be improved for inspection. Furthermore, by multiplying the camera device, the same processing efficiency as that of the wide-field optical system can be obtained without moving the camera device.
在此,基板S係例如圖(a)(b)所示般,為矩形狀並且平板狀,於縱橫具有多數接合區域AA11~AA14、AA21~AA24、・・・。基板S係被構成為搬運方向(X軸方向)之長度較寬度方向(Y軸方向)之長度長。Here, the substrate S is rectangular and flat as shown in (a) (b), and has many bonding regions AA11~AA14, AA21~AA24, ・・・in vertical and horizontal directions. The substrate S is configured such that the length in the conveyance direction (X-axis direction) is longer than the length in the width direction (Y-axis direction).
多重化之攝像裝置以各者持有相同的照明系統為佳。例如,如圖5(a)所示般,在攝像裝置CM1~CM4和基板S之間,配置在內部具備面發光照明(光源)SL、半反射鏡(半透過鏡)HM的照明裝置LD。來自面發光照明SL之照射光係藉由半反射鏡HM以與攝像裝置CM1~CM4相同的光軸反射,被照射至基板S之接合區域AA11~AA14之攝像對象物。以與攝像裝置CM1~CM4相同的光軸被照射至接合區域AA11~AA14之攝像對象物的其散射光,係以接合區域AA11~AA14之攝像對象物反射,其中的正反射光穿透半反射鏡HM而到達至攝像裝置CM1~CM4,形成接合區域AA11~AA14之攝像對象物之映像。即是,照明裝置LD具有同軸落射照明(同軸照明)之機能。It is better for multiple camera devices to have the same lighting system. For example, as shown in FIG. 5( a ), between the imaging devices CM1 to CM4 and the substrate S, an illuminating device LD including a surface-emitting illumination (light source) SL and a half mirror (half mirror) HM is disposed therein. The irradiation light from the surface emission illumination SL is reflected by the half mirror HM on the same optical axis as that of the imaging devices CM1 to CM4, and is irradiated to the imaging objects in the bonding regions AA11 to AA14 of the substrate S. The scattered light irradiated to the imaging object in the bonding area AA11~AA14 with the same optical axis as the imaging device CM1~CM4 is reflected by the imaging object in the bonding area AA11~AA14, and the regular reflection light penetrates the semi-reflection The mirror HM reaches the imaging devices CM1-CM4 to form images of the imaging objects in the junction areas AA11-AA14. That is, the lighting device LD has the function of coaxial epi-illumination (coaxial lighting).
如圖5(b)所示般,面發光照明SL及半反射鏡HM之Y軸方向之長度被構成為較基板S之寬度方向中之攝像裝置CM1~CM4之攝像視野全體寬一點,面發光照明SL被分割成較攝像裝置CM1~CM4之各攝像視野寬一點的發光區域SL1~SL4,而設為各個能夠點燈/熄燈。同軸照明裝置之發光區域被區分,每攝像裝置CM1~CM4能夠調光。依此,能夠提升在攝像裝置CM1~CM4之攝像視野之所有的區域中之照明的均勻性。另外,如後述般,在攝像裝置CM1~CM4之攝像視野之各者重複之情況,發光區域SL1~ SL4也重複。As shown in FIG. 5(b), the length of the Y-axis direction of the surface-emitting illumination SL and the half mirror HM is configured to be slightly wider than the entire imaging field of view of the imaging devices CM1 to CM4 in the width direction of the substrate S, and the surface-emission Illumination SL is divided into light-emitting areas SL1 to SL4 slightly wider than the respective imaging fields of view of imaging devices CM1 to CM4, and each of them can be turned on/off. The light-emitting area of the coaxial lighting device is divided, and each camera device CM1~CM4 can be dimmed. Accordingly, the uniformity of illumination in all areas of the imaging field of view of the imaging devices CM1 to CM4 can be improved. In addition, as described later, when each of the imaging fields of view of the imaging devices CM1 to CM4 overlaps, the light emitting areas SL1 to SL4 also overlap.
接著,針對複數攝像裝置之攝像視野之重複,使用圖6至圖8予以說明。圖6為針對複數攝像裝置之攝像視野之重複而予以說明的上視圖。圖7為在圖6中從箭號A方向觀看之時的側視圖。圖8為針對攝像視野之重複量予以說明的圖。Next, repetition of imaging fields of view of a plurality of imaging devices will be described using FIGS. 6 to 8 . Fig. 6 is a top view explaining repetition of imaging fields of view of a plurality of imaging devices. FIG. 7 is a side view when viewed from the direction of arrow A in FIG. 6 . FIG. 8 is a diagram for explaining the amount of repetition of imaging fields of view.
在上述實施型態中,表示攝像裝置CM1~ CM4之各者的攝像視野IA1~IA4不重複的例。但是,於進行攝像裝置之多重化之時,因多種製品間距(接合區域之間距)和攝像裝置之間距不一定要相同,故如圖6及圖7所示般,以某程度重複攝像視野間為佳。In the said embodiment, the example which the imaging field of view IA1-IA4 of each of imaging devices CM1-CM4 does not overlap was shown. However, when multiplexing the imaging devices, since the pitch of various products (the pitch between the joining regions) and the pitch between the imaging devices do not necessarily have to be the same, as shown in FIGS. better.
在圖6及圖7中,作為一例,表示設置四台攝像裝置,在基板S之一列設置六個接合區域的例,攝像裝置之間距大於接合區域之間距。因此,使鄰接之攝像裝置之攝像視野重複,例如設為在一個攝像裝置之攝像視野,包含兩個以上之攝像對象物。依此,攝像裝置CM1~CM4之各者為解像度高於攝像裝置CML的解像度之攝像裝置。攝像裝置CM1~CM4之各者雖然係無法一次以足夠的解像度攝像基板S之寬度方向一列分的全區域的攝像裝置,但是即使為可以一次以足夠的解像度攝像基板S之寬度方向一列分之全區域的攝像裝置亦可。在此,基板S係例如圖6所示般,為矩形狀並且平板狀,且於縱橫具有多數接合區域AA11~AA16、AA21~AA26、・・・。基板S係被構成為搬運方向(X軸方向)之長度較寬度方向(Y軸方向)之長度長。6 and 7 show an example in which four imaging devices are installed and six bonding regions are provided in one row of the substrate S, and the distance between the imaging devices is greater than the distance between the bonding regions. Therefore, the imaging fields of view of adjacent imaging devices are overlapped, for example, two or more imaging objects are included in the imaging field of view of one imaging device. Accordingly, each of the imaging devices CM1-CM4 is an imaging device with a resolution higher than that of the imaging device CML. Although each of the imaging devices CM1 to CM4 is an imaging device that cannot image the entire area of the substrate S in a row in the width direction with sufficient resolution at one time, even if it can image the entire area in the width direction of the substrate S at a time with sufficient resolution Area cameras are also available. Here, the substrate S is rectangular and flat as shown in FIG. 6 , and has many bonding regions AA11 to AA16 , AA21 to AA26 , ・・・ vertically and horizontally. The substrate S is configured such that the length in the conveyance direction (X-axis direction) is longer than the length in the width direction (Y-axis direction).
攝像視野之重複區域OVL若為包含最大尺寸之攝像對象物的大小即可(若保持最大製品尺寸即可)。依此,所有的攝像對象物在任何的攝像視野捕捉其攝像對象物之全體。如圖8所示般,重複區域OVL若為捕捉攝像對象物OB2之大小時即可,例如針對次直型基板,若為最大突片尺寸之重複量時,所有的突片係其突片之全景映入任何一個的視野。The overlapping region OVL of the imaging field of view may be of a size including the imaging object of the largest size (it may be sufficient if the largest product size is maintained). Accordingly, all the imaging objects capture the entirety of the imaging objects in any imaging field of view. As shown in Figure 8, if the repeated area OVL is the size of the captured object OB2, for example, for a sub-straight substrate, if it is the repetition amount of the maximum tab size, all the tabs are among the tabs. The panorama fits into any one's field of view.
針對複數攝像畫像之合成,使用圖9至圖15予以說明。圖9為說明影像鑲嵌和座標匹配的圖。圖10為說明使用校正板的影像鑲嵌和座標轉換的示意圖。圖11為說明失真的圖。圖12為表示仿射轉換及投影轉換之轉換行列式的圖。圖13為說明藉由基板之目標模型的影像鑲嵌和座標轉換的圖。圖14為以複數攝像裝置攝像在多重引線框架之突片上塗佈漿糊狀黏接劑之狀態的畫像,圖14(a)為無歷時變異之情況之攝像畫像,圖14(b)為具有歷時變異之情況的攝像畫像。圖15為說明空間再補正的圖,圖15(a)為表示空間再補正前之狀態的圖,圖15(b)為表示空間再補正後之狀態的圖。Synthesis of multiple captured images will be described using FIGS. 9 to 15 . FIG. 9 is a diagram illustrating image mosaicing and coordinate matching. FIG. 10 is a schematic diagram illustrating image mosaicing and coordinate transformation using a calibration plate. Fig. 11 is a diagram illustrating distortion. Fig. 12 is a diagram showing transformation determinants of affine transformation and projective transformation. FIG. 13 is a diagram illustrating image mosaicking and coordinate transformation by an object model of a substrate. Fig. 14 is an image of a state in which a paste-like adhesive is coated on the protruding pieces of a multi-lead frame captured by a plurality of imaging devices. Fig. 14(a) is a photographed image without temporal variation, and Fig. 14(b) is an image with A photographic portrait of a situation that has changed over time. Fig. 15 is a diagram for explaining space recorrection, Fig. 15(a) is a diagram showing a state before space recorrection, and Fig. 15(b) is a diagram showing a state after space recorrection.
為了抑制重複量,控制部CNT係以影像鑲嵌等合成在複數攝像裝置攝像到的畫像。一般的影像鑲嵌為了將複數畫像順利地接合在一起,在原樣的狀況下會有失去畫像之校準的情況。In order to suppress the amount of overlap, the control unit CNT synthesizes the images captured by the plurality of imaging devices by video mosaic or the like. In general image mosaic, in order to join multiple images together smoothly, the calibration of the images may be lost in the original state.
於是,在實施型態中,在複數台之攝像裝置攝像到的畫像之合成中, (A)在晶粒接合裝置之出貨時或調整時,進行使用校正板之影像鑲嵌和座標轉換。 (B)晶粒接合裝置之微調整時或連續運轉中係進行基板之目標模型所致的影像鑲嵌和被配置在滑槽上之目標模型所致的座標轉換。Therefore, in the embodiment, in synthesizing images captured by a plurality of imaging devices, (A) At the time of shipment or adjustment of the die bonding device, image mosaic and coordinate conversion using the calibration board are performed. (B) During fine adjustment or continuous operation of the die bonding device, the image mosaic by the target model of the substrate and the coordinate transformation by the target model placed on the chute are performed.
針對上述(A)使用圖9至圖12予以說明。 如圖9所示般,控制部CNT係於接合裝置之調整時投射成為覆蓋被多重化之攝像裝置之所有攝像視野之標尺的座標標記CMRK,以映入至重複區域OVL範圍的座標標記CMRK之相同交叉點IP為基準,將畫像藉由投影轉換或仿射轉換等進行座標轉換,而取得將各攝像裝置間的畫像順序地接合在一起的一張畫像(合成畫像)。在此,座標標記CMRK係準備校正板作為調整治具,且標記在其平板而加以使用者,座標標記CMRK係例如格子狀者。座標轉換時需要保證全體空間之位置關係的標記。若為圖9所示之覆蓋合成視野全體的座標標記CMRK時,投影轉換等之座標轉換時可以保證全體之空間的位置關係,在各交點間距,能夠進行畫像空間座標和實際空間座標之匹配。The above (A) will be described using FIGS. 9 to 12 . As shown in FIG. 9 , the control unit CNT projects the coordinate mark CMRK as a scale covering all imaging fields of view of the multiplexed imaging device during the adjustment of the bonding device so as to be reflected on the coordinate mark CMRK in the range of the overlapping region OVL. Using the same intersection point IP as a reference, the coordinates of the image are converted by projective transformation or affine transformation, and a single image (composite image) that sequentially joins the images of each camera device is obtained. Here, the coordinate mark CMRK prepares a calibration plate as an adjustment jig, and marks it on the flat plate to be used by the user. The coordinate mark CMRK is, for example, a grid-shaped one. A mark that guarantees the positional relationship of the entire space is required for coordinate conversion. If it is the coordinate mark CMRK covering the entirety of the synthetic field of view shown in Figure 9, the spatial positional relationship of the entirety can be guaranteed during coordinate conversion such as projection transformation, and the image space coordinates can be matched with the actual space coordinates at the distances between intersection points.
如圖10所示般,控制部CNT係藉由例如三台攝像裝置區分視野而攝像持有格子狀之紋路的一個大的校正板CP。三台攝像裝置具有由於相鄰接的彼此攝像裝置而持有某程度視野重複的重複區域OV12、OV23。重複區域OV12、OV13內之格子紋路之交叉點IP以黑點表示。As shown in FIG. 10 , the control unit CNT uses, for example, three imaging devices to divide the field of view and image one large calibration plate CP having grid-like textures. The three imaging devices have overlapping areas OV12 and OV23 in which fields of view overlap to some extent due to adjacent imaging devices. The intersection points IP of the lattice pattern in the repeating regions OV12 and OV13 are represented by black dots.
首先,控制部CNT係以仿射轉換或投影轉換而將相鄰接的攝像裝置中之任一者為基準而轉換另一方的攝像裝置之畫像的畫素座標。在此,基準畫像以畫像IV1,轉換畫像以畫像IV2為例予以說明。轉換係以彼此被轉換的畫像中之交叉點IP之座標(黑點座標)對準所對應的基準畫像中之交叉點IP之座標(黑點座標)之方式,算出仿射轉換或投影轉換之轉換行列之各參數。在此,一般而言,仿射轉換之轉換行列表示於圖12之式(1),投影轉換之行列式表示於圖12之式(2)。轉換行列之算出一般若為三點座標即可,並非單義的轉換,因藉由對相當於格子狀之格子的各個部分進行,能夠更正確轉換,故以對每個格子進行轉換為佳。First, the control unit CNT converts the pixel coordinates of the image of the other imaging device with reference to any one of the adjacent imaging devices by affine transformation or projective transformation. Here, the reference image will be described as image IV1, and the converted image will be described as image IV2. The transformation is to calculate the affine transformation or projective transformation by aligning the coordinates (black dot coordinates) of the intersection point IP in the converted images with the coordinates (black dot coordinates) of the intersection point IP in the corresponding reference image. Transform the parameters of the row and column. Here, in general, the transformation matrix of the affine transformation is represented by the equation (1) of FIG. 12 , and the determinant of the projection transformation is represented by the equation (2) of FIG. 12 . The calculation of conversion ranks and columns generally needs to be three-point coordinates. It is not a univocal conversion. Since the conversion can be performed more accurately by performing the conversion on each part of the grid corresponding to the lattice shape, it is better to convert each grid.
成為基準之畫像IV1持有以圖11所示般之桶型或線軸型等為代表的失真之情況,以先使用進入視野內的校正板CP所有交點IP而將元畫像轉換成與直立的直角坐標系統對準的畫像而進行失真補正為佳(第一失真補正)。依此,重複區域OV12、OV23以外也藉由單純的倍率調整而組入合成畫像。In the case that the reference image IV1 has distortions represented by the barrel-shape or spool-shape shown in Fig. 11, the primary image is converted into a right angle to the vertical by first using all the intersection points IP of the correction plate CP that enters the field of view It is preferable to perform distortion correction on the image aligned with the coordinate system (first distortion correction). According to this, the composite image is also combined by simple magnification adjustment in areas other than the overlapping regions OV12 and OV23.
因座標對準係以畫素座標系統進行,故畫像IV2之轉換後的座標被要求成為整數值,但是以仿射轉換或投影轉換被轉換的畫素,不一定要適合該處,也有轉換後的座標成為中間之值的情況。此時,轉換後之畫像的各座標係從接近的轉換後之座標之濃淡值進行以最近相鄰內插法、雙線性內插法、雙三次內插法等為代表的濃淡值補正。Since the coordinate alignment is carried out with the pixel coordinate system, the converted coordinates of the portrait IV2 are required to be integer values, but the pixels converted by affine transformation or projective transformation do not necessarily have to be suitable for this place, and there are also transformed The coordinates of become intermediate values. At this time, each coordinate system of the converted image undergoes shade value correction typified by nearest neighbor interpolation, bilinear interpolation, bicubic interpolation, etc. from the shade values of the closest converted coordinates.
針對上述(B)使用圖13至圖15予以說明。 因生產運作前之調整作業中之轉換係在視野內畫像空間中,以多數並且等間距配置表示座標基準的校正板CP之交點IP,故比較容易進行畫像空間和實際座標空間之對準。對此,在連續運轉中或簡易調整中,不使用校正板CP而進行畫像合成和座標對準。因若畫像合成可以知道表示彼此相同處的位置即可,故利用基板上之定位用目標標記TM等。因定位用目標標記TM,作為接合(黏接或黏貼)之時的突片之定位工程,已經作成模板模型之註冊,故利用此。如圖13所示般,在複數突片進入畫像之重複區域OV12、OV23之情況,使用相鄰接之突片之定位用目標標記TM而確保三點以上的標點。在僅有一個突片進入至重複區域之情況,在一個突片事先註冊三點之定位用目標標記TM,作為模板影像模型而予以註冊。The above (B) will be described using FIGS. 13 to 15 . Since the conversion in the adjustment operation before the production operation is in the image space within the field of view, the intersection point IP of the calibration plate CP representing the coordinate reference is arranged at a plurality of equal intervals, so it is relatively easy to align the image space and the actual coordinate space. In contrast, during continuous operation or simple adjustment, image synthesis and coordinate alignment are performed without using the calibration plate CP. Since it is only necessary to know the same positions for image synthesis, the positioning target mark TM etc. on the substrate is used. Since the target mark TM for positioning is used as the positioning process of the protruding piece at the time of joining (adhesive or pasting), it has already been registered as a template model, so it is used. As shown in FIG. 13 , when a plurality of protruding pieces enter the overlapping regions OV12 and OV23 of the image, three or more punctuation points are ensured using the positioning target marks TM of adjacent protruding pieces. When only one protruding piece enters the overlapping area, three positioning target marks TM registered in advance on one protruding piece are registered as a template image model.
就以該方法而言,雖然可以藉由畫像間之座標對準進行合成,但是無法進行與實際空間的位置對準。即使將任一的畫像作為基準而予以對準,不事先進行與座標空間的對準,當以原樣地進行合成時,如圖11所示般,作為與基準畫像之畫像IV1相鄰接的畫像IV2及與畫像IV2相鄰接的畫像IV3受到畫像IV1之失真的影響。失真所致的偏離當從畫像IV1依序相鄰接時,最遠的位置的畫像IV3最放大。為了抑制該放大量,在滑槽SCT之已知的座標設置標記SMRK,從畫像再次測量設置的標記SMRK之座標,依此以合成後的畫像一起歸還。因在此的畫像之失真依存於攝像裝置之透鏡,故將最初的轉換時之轉換(第一失真補正)於實施後進行畫像合成,為了對準全體的座標,以使用滑槽SCT上之標記SMRK為佳。即是,控制部CNT係使用座標標記CMRK而進行實際空間和畫像空間之補正之後,掌握另外設置在作為搬運路徑的滑槽SCT上的標記SMRK之座標。在此,滑槽SCT位於基板S之寬度方向之兩端部之外側。In this method, although it is possible to synthesize by aligning coordinates between images, it is not possible to align with the actual space. Even if any image is aligned as a reference, if the alignment with the coordinate space is not performed in advance, when the synthesis is performed as it is, as shown in FIG. 11, the image adjacent to the image IV1 of the reference image The image IV2 and the image IV3 adjacent to the image IV2 are affected by the distortion of the image IV1. Displacement due to distortion When the image IV1 is sequentially adjacent to each other, the image IV3 at the farthest position is enlarged the most. In order to suppress the amount of enlargement, mark SMRK is set at the known coordinates of the chute SCT, and the coordinates of the set mark SMRK are measured again from the image, and returned together with the synthesized image. Since the distortion of the image here depends on the lens of the imaging device, the conversion (first distortion correction) at the time of the initial conversion is performed after the image is synthesized. In order to align the overall coordinates, the mark on the chute SCT is used. SMRK is better. That is, the control part CNT grasp|ascertains the coordinate of the mark SMRK provided separately on the chute SCT which is a conveyance path, after performing correction of real space and image space using coordinate mark CMRK. Here, the chute SCT is located outside the both ends of the width direction of the board|substrate S. As shown in FIG.
如上述般,座標標記CMRK係於晶粒接合裝置所致的生產運轉前進行對準,作為調整作業而使一致。但是,隨著開工開始,藉由攝像裝置之自發熱和其飽和狀態,或攝像裝置間之熱分布的偏差,如圖14(b)所示般,有各攝像裝置之攝像視野些許持有各者的歷時位移之情況。在此,攝像裝置CM2之攝像視野IA2內之畫像相對於攝像裝置CM1之攝像視野IA1內之畫像往右偏離。即是,攝像裝置CM2往右位移。再者,以四角形之框架包圍之處表示各突片之左下的角部附近。在要求以μm的精度的接合裝置中,無法忽視該偏離。即使在施工中,也需要補正該些微的偏離。以下,針對補正該些微的偏離的方法,使用圖15予以說明。 As mentioned above, the coordinate mark CMRK is aligned before the production operation by the die bonding apparatus, and is made to match as an adjustment operation. However, with the start of work, due to the self-heating of the imaging device and its saturation state, or the deviation of the heat distribution between the imaging devices, as shown in FIG. 14(b), the imaging fields of each imaging device have slightly different The situation of the diachronic displacement of the person. Here, the image within the imaging field of view IA2 of the imaging device CM2 deviates to the right relative to the image within the imaging field of view IA1 of the imaging device CM1. That is, the imaging device CM2 is displaced to the right. In addition, the place enclosed by the square frame shows the vicinity of the lower left corner of each protruding piece. This deviation cannot be ignored in a bonding device requiring a precision of μm. Even during construction, it is necessary to correct this slight deviation. Hereinafter, a method of correcting this slight deviation will be described using FIG. 15 .
如上述般,有當在連續施工中產生攝像裝置間之偏離時,在持有已知的間距之基板S之突片間間距產生差異之情況。控制部CNT係藉由定期性地測量該已知的突片間距,檢測出攝像裝置之熱等的主要原因所致的固有位移。再者,即使控制部CNT定期性地測量已知的滑槽SCT上之標記SMRK間之距離,亦可以檢測攝像裝置之熱等的主要原因所致的固有的位移。 As mentioned above, when a deviation occurs between imaging devices during continuous construction, there may be a difference in the pitch between the protrusions of the substrate S having a known pitch. The control unit CNT periodically measures the known pitch between the protrusions to detect the intrinsic displacement due to factors such as heat of the imaging device. Furthermore, even if the control unit CNT periodically measures the known distance between the marks SMRK on the chute SCT, it is possible to detect the inherent displacement due to factors such as heat of the imaging device.
於檢測該位移之時,控制部CNT係使用基板S上之定位用目標標記TM等之特徵標記。而再次計算將畫像予以合成轉換的投影轉換行列或仿射轉換行列。此時,求出的投影轉換行列或仿射轉換行列可以進行畫像之接合,但是如圖15(a)所示般,有無法進行畫像空間和實際空間之匹配的狀態之情況。因此,控制部CNT係使用最初測量的滑槽SCT上之標記SMRK,以其座標為基準而進行再次轉換。依此,取得圖15(b)所示般的合成畫像。 When detecting this displacement, the control unit CNT uses characteristic marks such as the target mark TM for positioning on the substrate S. Then, the matrix of projective transformation or the matrix of affine transformation for synthesizing and transforming the image is calculated again. At this time, the obtained projective transformation matrix or affine transformation matrix can join images, but as shown in FIG. 15( a ), there may be a state where the image space and the actual space cannot be matched. Therefore, the control part CNT uses the mark SMRK on the chute SCT measured first, and performs reconversion based on the coordinate. In this way, a synthetic image as shown in FIG. 15(b) is obtained.
另外,由於基板P之厚度(基板P之上面之高度)使得倍率變化,高度改變時,校準變得困難。使用圖16及圖17說明減輕基板之厚度之影響的手法。 In addition, the magnification changes due to the thickness of the substrate P (the height of the upper surface of the substrate P), and when the height changes, calibration becomes difficult. A method for reducing the influence of the thickness of the substrate will be described using FIGS. 16 and 17 .
圖16為說明改變校正板之高度之方法的圖,圖16(a)表示基板被搬運且被載置於接合台上而被配置的狀態,圖16(b)表示校正板之上下移動的剖面圖。圖17為說明設置在滑槽之標記的圖,圖17(a)為表示基板被搬運且被 載置於接合台上之狀態的剖面圖,圖17(b)為設置標記之滑槽之上視圖,圖17(b)為在其他例中設置標記之滑槽的剖面圖。 Fig. 16 is a diagram explaining the method of changing the height of the calibration plate. Fig. 16(a) shows the state where the substrate is transported and placed on the bonding table and arranged, and Fig. 16(b) shows the cross section of the calibration plate moving up and down picture. Figure 17 is a diagram illustrating the marks provided on the chute, and Figure 17(a) shows that the substrate is transported and The sectional view of the state placed on the joining table, Fig. 17(b) is a top view of the chute where the mark is set, and Fig. 17(b) is a sectional view of the chute where the mark is set in another example.
控制部CNT係為了對應於高度位移,故使校正板CP上下微動而在每高度取得投影轉換行列。控制部CNT係算出已知之基板之厚度或漿糊高度,從晶粒厚度等算出校準圖案位置或檢查視野位置之預測高度,自動選擇要使用保持在每高度的哪個投影轉換行列。控制部CNT係在相鄰接之攝像裝置間之重複區域,進行基板上之相同點的辨識,測量高度。控制部CNT從其測量值自動選擇所使用的投影轉換行列。 In order to correspond to the height displacement, the control unit CNT slightly moves the correction plate CP up and down to obtain the projection conversion matrix for each height. The control unit CNT calculates the known substrate thickness or paste height, calculates the predicted height of the calibration pattern position or inspection view position from the grain thickness, etc., and automatically selects which projection transformation row to use to maintain at each height. The control unit CNT recognizes and measures the height of the same point on the substrate in the overlapping area between adjacent imaging devices. The control CNT automatically selects the used projection conversion rank from its measured values.
具體而言,在藉由最初的校準板CP進行的補正時,如圖16(b)所示般,使設置有校正板CP之接合台AS上下移動,在接合台AS之每高度測量校正板CP之交點的座標。接合台之上下機構被構成為能夠以μm單位上下移動。 Specifically, at the time of correction by the first calibration plate CP, as shown in FIG. 16( b ), the bonding table AS on which the calibration plate CP is installed is moved up and down, and the calibration plate is measured at each height of the bonding table AS. Coordinates of the intersection point of CP. The up and down mechanism of the bonding table is configured to be able to move up and down in units of μm.
再者,以設置在滑槽SCT上之標記SMRK設為與基板S之上面之高度相同的高度為佳。如圖17(a)、(b)所示般,在例如滑槽SCT成形深度及直徑不同的孔(穴)。表示標記SMRK之孔即使如圖17(c)所示般,依每深度個別設置亦可。標記SMRK若為基板S之上面和高度一致時,即使為孔亦可。 Furthermore, it is preferable that the height of the mark SMRK provided on the chute SCT be the same as the height of the upper surface of the board|substrate S. As shown in FIG. As shown in Fig. 17(a) and (b), for example, holes (holes) having different depths and diameters are formed in the chute SCT. The holes marked SMRK can be provided individually for each depth as shown in Fig. 17(c). The mark SMRK may be a hole as long as the top surface of the substrate S is the same as the height.
若藉由實施型態時,具有以下一個或複數效果。 When implemented, it has one or more of the following effects.
(a)因可以從幾乎正上方觀看各攝像對象物,故能夠防止在單純低倍率光學系統產生的畫像之高度方向在視野邊緣傾斜之情形。 (b)因可以檢測由於攝像裝置之熱等的主要原因所產生的固有位移,可以在晶粒接合器之運轉動作中實施攝像裝置之補正,故能夠減輕攝像裝置之歷時位移之影響。 (c)因可以對應於高度位移,故不會受到由於基板之品種所致的厚度之變化的影響,故能夠減輕品種不同的影響。 (d)藉由至少上述(a)~(c)中之任一者,可以定位精度之穩定化、檢查之穩定化。 (a) Since each object to be imaged can be viewed from almost directly above, it is possible to prevent the height direction of the image produced by the simple low magnification optical system from being inclined at the edge of the field of view. (b) Since it is possible to detect the intrinsic displacement caused by the main factors such as heat of the imaging device, the correction of the imaging device can be implemented during the operation of the die bonder, so the influence of the temporal displacement of the imaging device can be reduced. (c) Since height displacement can be accommodated, it is not affected by changes in thickness depending on the type of substrate, so the influence of different types can be reduced. (d) Stabilization of positioning accuracy and stabilization of inspection can be achieved by at least any one of (a) to (c) above.
(變形例) 以下,針對實施型態之代表性的變形例予以例示。在以下之變形例之說明中,針對具有與在上述實施例中說明者相同的構成及功能之部分,設為能夠使用與上述實施例相同之符號者。而且,針對如此之部分的說明,設為能夠在技術性不矛盾之範圍內,適當援用在上述實施例中之說明者。再者,能夠在技術性不矛盾之範圍內,適當、複合性地適用上述實施例之一部分及複數變形例之全部或一部分。(Modification) Hereinafter, typical modification examples of the embodiment will be illustrated. In the description of the following modified examples, the same reference numerals as those in the above-mentioned embodiment can be used for parts having the same configuration and function as those described in the above-mentioned embodiment. In addition, regarding the description of such a portion, it is assumed that the description in the above-mentioned embodiment can be appropriately used within the range of technical compatibility. In addition, a part of the above-described embodiments and all or a part of a plurality of modified examples can be appropriately and compositely applied within a range that is not technically contradictory.
圖18為針對變形例中之攝像裝置之多重化予以說明的斜視圖。在實施型態中,雖然說明以複數攝像裝置攝像基板S之寬度方向之1列之攝像對象物之例,但是即使在基板S之長度方向也配置複數攝像裝置,即是將複數攝像裝置配置成格子狀,攝像複數列之攝像對象物亦可。Fig. 18 is a perspective view illustrating multiplexing of an imaging device in a modified example. In the embodiment, although an example in which imaging objects in a row in the width direction of the substrate S are imaged by a plurality of imaging devices is described, the plurality of imaging devices are also arranged in the longitudinal direction of the substrate S, that is, the plurality of imaging devices are arranged as It is also possible to photograph objects in a lattice shape and to photograph plural rows.
例如,如圖18所示般,配置四列攝像裝置群CM10~CM40,各攝像裝置群分別具有配置成一列的實施型態之四台之攝像裝置CM1~CM4,16台之攝像裝置被配置成格子狀。在此,在基板S,一列六個攝像對象部被配置五列,相鄰接的攝像裝置之攝像視野重複。For example, as shown in FIG. 18 , four imaging device groups CM10 to CM40 are configured, and each imaging device group has four imaging devices CM1 to CM4 arranged in a row, and 16 imaging devices are configured as lattice. Here, on the substrate S, six imaging target portions in one row are arranged in five rows, and the imaging fields of view of adjacent imaging devices overlap.
如圖18所示般,因不僅基板S之第一列的全攝像對象物,也並行攝像至第二列之後的第數列為止的全攝像對象物,可以辨識合成的畫像,故比起實施型態能夠減少移動基板S而攝像的次數。 [實施例]As shown in FIG. 18, not only the first row of imaging objects of the substrate S, but also the entire imaging objects of the second row and subsequent rows are imaged in parallel, and the synthesized image can be recognized. Therefore, compared with the implementation type This state can reduce the number of times of imaging while moving the substrate S. [Example]
針對適用上述實施型態的實施例以下說明。圖19為表示在實施例中之晶粒接合器之概略的上視圖。圖20為從圖19中之箭頭A方向觀看時,說明拾取頭及接合頭之動作的圖。Embodiments applicable to the above-mentioned implementation forms are described below. Fig. 19 is a schematic top view showing a die bonder in the embodiment. Fig. 20 is a diagram illustrating the operation of the pick-up head and the bonding head when viewed from the direction of arrow A in Fig. 19 .
晶粒接合器10大致具有供給安裝於基板S之晶粒D的晶粒供給部1、拾取部2、中間平台部3、預成部9、接合部4、搬運部5、基板供給部6、基板搬出部7、監視且控制各部之動作的控制部8。Y軸方向係晶粒接合器10之前後方向,X軸方向為左右方向。晶粒供給部1被配置在晶粒接合器10之前方側,接合部4被配置在深側。在此,在基板S形成成為最終一封裝體的複數製品區域(以下,稱為封裝區域P)。例如,基板S為引線框架之情況,封裝區域P具有晶粒D被載置的突片。The die bonder 10 roughly includes a
首先,晶粒供給部1係供給安裝於基板S之封裝區域P的晶粒D。晶粒供給部1具有保持晶圓11之晶圓保持台12和以從晶圓11上推晶粒D之虛線所示的剝離單元13。晶粒供給部1係藉由無圖示之驅動手段在XY軸方向移動,使拾取之晶粒D移動至剝離單元13之位置。First, the
拾取部2具有拾取晶粒D之拾取頭21、使拾取頭21移動至Y軸方向之拾取頭之Y驅動部23,和使夾頭22升降、旋轉及X軸方向移動的無圖示的各驅動部,和掌握從晶圓11拾取的晶粒D之拾取位置的晶圓辨識攝影機24。拾取頭21具有將被上推的晶粒D吸附保持在前端的夾頭22(也參照圖14),從晶粒供給部1拾取晶粒D,載置於中間平台31。拾取頭21具有使夾頭22升降、旋轉及X方向移動的無圖示之各驅動部。The pick-up
中間平台部3具有暫時性地載置晶粒D之中間平台31,和用以辨識中間平台31上之晶粒D的平台辨識攝影機32。The
預成部9具有注射器91和使注射器91在Y方向及Z方向移動的驅動器93,和作為掌握注射器91之塗佈位置等之攝像裝置的黏接劑辨識攝影機94。在此,黏接劑辨識攝影機94係例如實施型態之被多重化的攝像裝置CM1~ CM4,攝像裝置CM1~CM4分別被構成為使用照明裝置LD而進行攝像。預成部9係以注射器91對藉由搬運部5被搬運來的基板S塗佈環氧樹脂等之漿糊狀黏接劑。注射器91係內部被封入漿糊狀黏接劑,被構成為藉由空氣壓,漿糊狀黏接劑從噴嘴前端被推出至基板S而被塗佈。基板S例如以橫向一列排列複數個單位引線框架而一連串地被連貫設置的多重引線框架之情況,在單位引線框架之每突片塗佈漿糊狀黏接劑。The preforming
接合部4係從中間平台31拾取晶粒D,接合於被搬運而來的基板S之塗佈有漿糊狀黏接劑之封裝區域P上。接合部4具備與拾取頭21相同將晶粒D吸附保持於前端的夾頭42(也參照圖20)的接合頭41、使接合頭41在Y軸方向移動之Y動部43,和攝影基板S之封裝區域P之位置辨識標記(無圖示),且辨識接合位置之基板辨識攝影機44。在此,基板辨識攝影機44係例如實施型態之被多重化的攝像裝置CM1~CM4,攝像裝置CM1~CM4分別被構成為使用照明裝置LD而進行攝像。藉由如此之構成,接合頭41根據平台辨識攝影機32之攝影資料而補正拾取位置、姿勢,從中間平台31拾取晶粒D,且根據基板辨識攝影機44之攝影資料將晶粒D接合於基板。The
搬運部5具有抓取搬運基板S之基板搬運爪51和基板S移動之搬運通道52。基板S係藉由利用沿著搬運通道52而設置之無圖示滾珠輪桿驅動被設置在搬運通道52之基板搬運爪51之無圖示的螺帽而移動。藉由如此之構成,基板S係從基板供給部6沿著搬運通道52而移動至接合位置,於接合後,移動至基板搬出部7,將基板S交給至基板搬出部7。The
接著,針對晶粒供給部1之構成,使用圖21進行說明。圖21為表示圖19之晶粒供給部之主要部位的概略剖面圖。Next, the structure of the crystal
晶粒供給部1具備在水平方向(XY軸方向)移動的晶圓保持台12,在上下方向移動的剝離單元13。晶圓保持台12具備保持晶圓環14之擴張環15,和將被固定在晶圓環14的切割膠帶16定位成水平的支持環17。在晶圓11中,被切割成網眼狀的晶粒D被黏接固定於切割膠帶16。剝離單元13被配置在支持環17之內側。The
晶粒供給部1係於晶粒D之上推時,使保持晶圓環14之擴充環15下降。其結果,被保持在晶圓環14之切割膠帶16被拉長,晶粒D之間隔變寬,藉由剝離單元13時而從晶粒D下方上推切割膠帶16時而進行水平移動,而提升晶粒D之拾取性。When the
如圖22所示般,控制系統80具備控制部8和驅動部86和訊號部87和光學系統88。控制部8大致具有主要以CPU(Central Processor Unit)所構成之控制、運算裝置81、記憶裝置82、輸入輸出裝置83、匯流排線84、電源部85。記憶裝置82具有以記憶有處理程式等之RAM所構成之主記憶裝置82a,和以記憶有控制所需之控制資料或畫像等資料等之HDD所構成的輔助記憶裝置82b。輸入輸出裝置83具有顯示裝置狀態或資訊等之螢幕83a,和輸入操作員之指示的觸控面板83b,和操作螢幕的滑鼠83c,和擷取來自光學系統88之畫像資料的畫像擷取裝置83d。再者,輸入輸出裝置83具有控制晶粒供給部1之XY平台(無圖示)或接合頭台之ZY驅動軸等之驅動部86之馬達控制裝置83e,和從各種感測器訊號或照明裝置等之開關等之訊號部87擷取或控制訊號的I/O訊號控制裝置83f。光學系統88包含圖20所示的晶圓辨識攝影機24、黏接劑辨識攝影機94、平台辨識攝影機32、基板辨識攝影機44。控制、運算裝置81經由匯流排線84擷取所需的資料,進行運算,且進行拾取頭41等之控制,或將資訊送至螢幕83a等。As shown in FIG. 22 , the
控制部8係經由畫像擷取裝識83d而將以光學系統88攝像到的畫像資料保存於記憶裝置82。依據根據保存的畫像資料而編程的軟體,使用控制、運算裝置81而進行晶粒D及基板S之定位,漿糊狀黏接劑之塗佈圖案之檢查以及晶粒D及基板S之表面檢查。根據控制、運算裝置81所算出之晶粒D及基板S之位置,藉由軟體經由馬達控制裝置83e使驅動部86移動。藉由該製程,進行晶圓11上之晶粒D之定位,以晶粒供給部1及晶粒接合部4之驅動部進行動作,將晶粒D接合於基板S上。在光學系統88使用的辨識攝影機係灰階、彩色攝影機等,使光強度予以數值化。The
接著,針對使用與實施例有關之晶粒接合器的半導體裝置之製造方法,使用圖23進行說明。圖23為表示使用圖19之晶粒接合器的半導體裝置之製造方法之流程圖。Next, the manufacturing method of the semiconductor device using the die bonder concerning an Example is demonstrated using FIG. 23. FIG. FIG. 23 is a flowchart showing a method of manufacturing a semiconductor device using the die bonder shown in FIG. 19 .
(步驟S51:晶圓、基板搬入工程)
將保持貼附從晶圓11被分割之晶粒D的切割膠帶16的晶圓環14儲存於晶圓卡匣(無圖示),搬入至晶粒接合器10。控制部8係將晶圓環14從填充有晶圓環14之晶圓卡匣供給至晶粒供給部1。再者,準備基板S,搬入至晶粒接合器10。控制部8係以基板供給部6將基板S安裝於基板搬運爪51。(Step S51: Wafer and substrate loading process)
The
(步驟S52:拾取工程)
控制部8係藉由晶圓保持台12以可以從晶圓環14拾取所期望的晶粒D之方式,移動晶圓環14,根據藉由晶圓辨識攝影機24攝影到的資料進行定位及表面檢查。控制部8係藉由剝離單元13從切割膠帶剝離晶粒D。(Step S52: pick up project)
The
控制部8係藉由拾取器21從晶圓11拾取被剝離的晶粒D。如此一來,從切割膠帶16被剝離的晶粒D被吸附、保持在拾取頭21之夾頭22而被搬運至下一個工程(步驟BS13)。而且,當將晶粒D從搬運至下一個工程的夾頭22返回至晶粒供給部1時,依照上述順序,接著的晶粒D從切割膠帶16被剝離,之後依照相同的順序,晶粒D從切割膠帶16一個一個地被剝離。The
(步驟S53:接合工程)
控制部8係藉由黏接劑辨識攝影機94而取得塗佈前之基板S之表面的畫像而確認應塗佈漿糊狀黏接劑的表面。若在應塗佈面無產生問題時,控制部8係從注射器91對藉由搬運部5被搬運的基板S塗佈漿糊狀黏接劑。基板S為多重引線框架之情況,對所有的突片塗佈漿糊狀黏接劑。控制部8係以黏接劑辨識攝影機94再次確認塗佈後漿糊狀黏接劑是否正確地被塗佈,檢查被塗佈的漿糊狀黏接劑。若塗佈無產生問題時,控制部8係藉由搬運部將基板S搬運至接合台BS,根據藉由基板辨識攝影機44攝影到的畫像資料而進行定位。(Step S53: Joining process)
The
控制部8係將從晶圓11藉由拾取頭21拾取到的晶粒D載置於中間平台31,以接合頭41從中間平台31再次拾取晶粒D,接合於被定位的基板S。控制部8係根據藉由基板辨識攝影機44攝影到的畫像資料,進行晶粒D是否被接合於期望的位置等的檢查。The
(步驟S54:基板搬出工程)
控制部8係以基板搬出部7從基板搬運爪51取出被接合晶粒D的基板S。從晶粒接合器10搬出基板S。(Step S54: Substrate unloading process)
The
以上,雖然根據實施型態、實施例及變形例對本發明者所創作岀之發明進行具體性說明,但是本發明並不限定於上述實施型態、變形例及實施例,當然可以做各種變更。As mentioned above, although the invention created by the present inventor has been concretely described based on the embodiments, examples, and modifications, the present invention is not limited to the above embodiments, examples, and examples, and various changes are of course possible.
例如,在實施例中,雖然說明以預成部在基板塗佈漿糊狀黏接劑之例,但是將晶粒黏接於基板之黏接劑,即使使用被黏接於晶圓11和切割膠帶16之間的被稱為晶粒黏接膜(DAF)的薄膜狀之黏接材料,以取代藉由注射器91被塗佈的漿糊狀黏接劑亦可。DAF適用於在基板S上之晶粒上載置許多片晶粒而構成的疊層封裝體。
For example, in the embodiment, although the example of coating the paste-like adhesive on the substrate with the preformed part is described, the adhesive for bonding the die to the substrate is used even if the adhesive bonded to the
再者,在實施例中,雖然說明在晶粒供給部1和接合部4之間,設置中間平台部3,將以拾取頭21從晶粒供給部1拾取到的晶粒D載置於中間平台31,以接合頭41從中間平台31再次拾取晶粒D,接合於被搬運來的基板S之例,但是即使以接合頭41將從晶粒供給部1拾取到的晶粒D接合於基板S亦可。
Furthermore, in the embodiment, although it is described that an
10:晶粒接合器(晶粒接合裝置) 10: Die bonder (die bonder)
AA、AA11~AA14、AA21~AA24、AA11~AA16、AA21~AA26:接合區域 AA, AA11~AA14, AA21~AA24, AA11~AA16, AA21~AA26: junction area
CML、CMH、CM1~CM4:攝像裝置 CML, CMH, CM1~CM4: camera device
CNT、8:控制部 CNT, 8: Control Department
S:基板 S: Substrate
SCT:滑槽(搬運路徑)SCT: Chute (transport path)
[圖1(a)]為表示通常視野光學系統的斜視圖,[圖1(b)]表示為寬視野光學系統的斜視圖。 [圖2(a)]為使用微透鏡之寬視野光學系統之概念圖,[圖2(b)]為使用遠心透鏡之寬視野光學系統之概念圖。 [圖3(a)]為表示漿糊之立體形狀之影像的圖,[圖3(b)]為表示以微透鏡在寬域觀看基板之時的漿糊上之譜線的圖。 [圖4(a)]係針對實施型態之攝像裝置之多重化的上視圖,[圖4(b)]為在圖4(a)從箭號A方向觀看之時的側視圖。 [圖5]為針對用於實施型態之攝像裝置的照明裝置予以說明的圖。 [圖6]為針對複數攝像裝置之攝像視野之重複而予以說明的上視圖。 [圖7]為在圖6中從箭號A方向觀看之時的側視圖。 [圖8]為針對攝像視野之重複量予以說明的圖。 [圖9]為說明影像鑲嵌和座標匹配的圖。 [圖10]為說明使用校正板的影像鑲嵌和座標轉換的示意圖。 [圖11]為說明失真的圖。 [圖12]為表示仿射轉換及投影轉換之轉換行列式的圖。 [圖13]為說明藉由基板之目標模型的影像鑲嵌和座標轉換的圖。 [圖14]為說明攝像裝置之歷時位移之影響的圖。 [圖15]為說明空間再補正的圖。 [圖16]為改變校正板之高度之方法的圖。 [圖17]為說明設置在滑槽的標記的圖。 [圖18]為針對變形例中之攝像裝置之多重化予以說明的斜視圖。 [圖19]為表示在實施例中之晶粒接合器之概略的上視圖。 [圖20]為從圖19中之箭頭A方向觀看時,說明拾取頭及接合頭之動作的圖。 [圖21]為表示圖19之晶粒供給部之主要部位的概略剖面圖。 [圖22]為說明圖19之晶粒接合器之控制系統之概略構成的方塊圖。 [圖23]係表示半導體裝置之製造方法的流程圖。[ FIG. 1( a )] is a perspective view showing a normal field of view optical system, and [ FIG. 1( b )] is a perspective view showing a wide field of view optical system. [Fig. 2(a)] is a conceptual diagram of a wide-field optical system using a microlens, and [Fig. 2(b)] is a conceptual diagram of a wide-field optical system using a telecentric lens. [FIG. 3(a)] is a diagram showing the image of the three-dimensional shape of the paste, and [FIG. 3(b)] is a diagram showing spectral lines on the paste when the substrate is viewed in a wide area with a microlens. [FIG. 4(a)] is a top view of the multiplexing of the imaging device of the embodiment, and [FIG. 4(b)] is a side view when viewed from the arrow A direction in FIG. 4(a). [FIG. 5] It is a figure explaining the illumination device used for the imaging device of embodiment. [FIG. 6] It is a top view explaining the repetition of the imaging field of view of a plurality of imaging devices. [ Fig. 7 ] It is a side view when viewed from the arrow A direction in Fig. 6 . [FIG. 8] It is a figure explaining the repetition amount of an imaging field of view. [FIG. 9] It is a figure explaining image mosaic and coordinate matching. [ Fig. 10 ] is a schematic diagram illustrating image mosaicking and coordinate transformation using a calibration plate. [ Fig. 11 ] is a diagram illustrating distortion. [ Fig. 12 ] is a diagram showing transformation determinants of affine transformation and projective transformation. [ FIG. 13 ] is a diagram illustrating image mosaicking and coordinate transformation of an object model by a substrate. [ Fig. 14 ] is a diagram illustrating the influence of the temporal displacement of the imaging device. [FIG. 15] It is a figure explaining space re-correction. [ Fig. 16 ] A diagram showing a method of changing the height of the correction plate. [FIG. 17] It is a figure explaining the mark provided in the chute. [FIG. 18] It is a perspective view explaining the multiplexing of the imaging device in a modification. [ Fig. 19 ] is a schematic top view showing a die bonder in an embodiment. [FIG. 20] It is a figure explaining the operation|movement of a pick-up head and a bonding head seen from the direction of the arrow A in FIG. 19. [ Fig. 21] Fig. 21 is a schematic cross-sectional view showing main parts of the crystal grain supply unit shown in Fig. 19 . [FIG. 22] It is a block diagram explaining the schematic structure of the control system of the die bonder of FIG. 19. [FIG. [ Fig. 23 ] is a flow chart showing a method of manufacturing a semiconductor device.
AA11~AA16:接合區域 AA11~AA16: junction area
CM1~CM4:攝像裝置 CM1~CM4: camera device
CNT:控制部 CNT: Control Department
S:基板 S: Substrate
IA1,IA2:攝像視野 IA1,IA2: camera field of view
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