TW202110777A - 銅/ 陶瓷接合體、及、絕緣電路基板 - Google Patents
銅/ 陶瓷接合體、及、絕緣電路基板 Download PDFInfo
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- TW202110777A TW202110777A TW109128780A TW109128780A TW202110777A TW 202110777 A TW202110777 A TW 202110777A TW 109128780 A TW109128780 A TW 109128780A TW 109128780 A TW109128780 A TW 109128780A TW 202110777 A TW202110777 A TW 202110777A
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- Prior art keywords
- copper
- concentration
- ceramic
- ceramic substrate
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- 239000010949 copper Substances 0.000 title claims abstract description 165
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 164
- 239000000919 ceramic Substances 0.000 title claims abstract description 154
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 140
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 51
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 51
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 23
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 22
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 22
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 22
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 22
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 12
- 238000005259 measurement Methods 0.000 claims abstract description 8
- 238000005304 joining Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 106
- 238000000441 X-ray spectroscopy Methods 0.000 claims description 18
- 238000004611 spectroscopical analysis Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 18
- 150000001879 copper Chemical class 0.000 abstract description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 50
- 239000002184 metal Substances 0.000 description 50
- 238000010438 heat treatment Methods 0.000 description 27
- 239000000463 material Substances 0.000 description 27
- 238000001816 cooling Methods 0.000 description 21
- 239000012535 impurity Substances 0.000 description 20
- 239000010936 titanium Substances 0.000 description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 239000011888 foil Substances 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004881 precipitation hardening Methods 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 229910000765 intermetallic Inorganic materials 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 description 2
- 229910018956 Sn—In Inorganic materials 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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Abstract
此銅/陶瓷接合體(10)係接合銅或銅合金所成銅構件(12、13)、和陶瓷構件(11)而成,在從銅構件(12、13)與陶瓷構件(11)之接合界面,向銅構件(12、13)側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Al、Si、Zn、Mn之合計濃度為3原子%以下。
Description
此發明係有關接合銅或銅合金所成銅構件、和陶瓷構件之銅/陶瓷接合體、及於陶瓷基板之表面,接合銅或銅合金所成銅板而成之絕緣電路基板。
本發明係根據於2019年9月2日,日本申請之日本特願2019-159566號及於2020年8月6日,日本申請之日本特願2020-134070號主張優先權,將此內容援用於此。
於功率模組、LED模組及熱電模組中,於絕緣層之一方之面,形成導電材料所成之電路層的絕緣電路基板,成為接合功率半導體元件、LED元件及熱電元件之構成。
為控制風力發電、電動車、油電混合車等所使用之大電力控制用之功率半導體元件係由於動作時之發熱量多之故,做為搭載此之基板,具備陶瓷基板、和於此陶瓷基板之一方之面,接合導電性優異之金屬板而形成電路層的絕緣電路基板,則在於以往被廣為利用。做為做為絕緣電路基板,亦有提供於陶瓷基板之另一方的面,接合金屬板形成金屬層者。
於專利文獻1中,提案有經由於陶瓷基板之一方的面及另一方的面,接合銅板,形成電路層及金屬層的絕緣電路基板。於此專利文獻1中,於陶瓷基板之一方的面及另一方的面,隔著Ag-Cu-Ti系銲材,配置銅板,經由進行加熱處理,接合銅板(所謂活性金屬硬焊法)。此活性金屬硬焊法中,使用活性金屬之含有Ti之銲材之故,可提升熔融之銲材與陶瓷基板之濕濡性,可良好接合陶瓷基板與銅板。
經由記載於專利文獻1之活性金屬硬焊法,接合陶瓷基板與銅板之時,於陶瓷基板與銅板之接合界面,形成TiN層。此TiN層係堅硬且脆之故,於冷熱周期負荷時,在於陶瓷基板會有產生破裂之疑慮。
於專利文獻2中,提案有使用Cu-Mg-Ti系銲材,接合陶瓷基板與銅板的絕緣電路基板。
於此專利文獻2中,於氮氣環境下,經由以560~800℃加熱接合而構成,Cu-Mg-Ti合金中之Mg則昇華,不殘存於接合界面,且氮化鈦(TiN)則實質上不會形成。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特許第3211856號公報
[專利文獻2]日本特許第4375730號公報
[發明欲解決之課題]
最近,搭載於絕緣電路基板之半導體元件之發熱溫度有變高之傾向,對於絕緣電路基板,相較以往,更要求可承受嚴酷冷熱周期之冷熱周期可靠性。
如專利文獻2,使用Cu-Mg-Ti系銲材之時,於接合界面會產生Cu與Mg之液相。在此,於接合界面存在許多不純物元素時,在接合界面之液相凝固之時,會析出金屬間化合物,陶瓷基板與銅板之接合界面附近則析出硬化。為此,負荷嚴酷冷熱周期之時,在於陶瓷基板會有產生破裂之疑慮。
此發明係有鑑於上述情事而成,提供即使負荷嚴酷之冷熱周期之時,可抑制陶瓷構件之破裂之產生,冷熱周期可靠性優異之銅/陶瓷接合體、及由此銅/陶瓷接合體所成絕緣電路基板為目的。
[為解決課題之手段]
為解決前述之課題,關於本發明之一形態之銅/陶瓷接合體(以下,稱「本發明之銅/陶瓷接合體」)係接合銅或銅合金所成銅構件、和陶瓷構件所成的銅/陶瓷接合體中,在從前述銅構件與前述陶瓷構件之接合界面,向前述銅構件側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Al、Si、Zn、Mn之合計濃度為3原子%以下為特徵。
根據本發明之銅/陶瓷接合體時,於接合界面中,不純物元素(Al、Si、Zn、Mn)之濃度極低,於接合界面,可抑制微細之金屬間化合物之析出,可抑制陶瓷構件與銅構件之接合界面附近被析出硬化。因此,即使負荷嚴酷之冷熱周期之時,可抑制陶瓷構件之破裂之產生。
本發明之銅/陶瓷接合體中,在從前述銅構件與前述陶瓷構件之接合界面,向前述銅構件側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Al之濃度成為2原子%以下為佳。
此時,於接合界面中,不純物元素之Al之濃度則如上述被限制之故,更可抑制陶瓷構件與銅構件之接合界面附近被析出硬化。
本發明之銅/陶瓷接合體中,在從前述銅構件與前述陶瓷構件之接合界面,向前述銅構件側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Si之濃度成為2原子%以下為佳。
此時,於接合界面中,不純物元素之Si之濃度則如上述被限制之故,更可抑制陶瓷構件與銅構件之接合界面附近被析出硬化。
本發明之銅/陶瓷接合體中,在從前述銅構件與前述陶瓷構件之接合界面,向前述銅構件側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Zn與Mn之合計濃度成為2原子%以下為佳。
此時,於接合界面中,不純物元素之Zn與Mn之合計濃度則如上述被限制之故,更可抑制陶瓷構件與銅構件之接合界面附近被析出硬化。
本發明之其他形態之絕緣電路基板(以下,稱「本發明之絕緣電路基板」)係於陶瓷基板之表面,接合銅或銅合金所成銅板而成的絕緣電路基板中,在從前述銅板與前述陶瓷基板之接合界面,向前述銅板側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Al、Si、Zn、Mn之合計濃度為3原子%以下為特徵。
根據本發明之絕緣電路基板時,於接合界面中,不純物元素(Al、Si、Zn、Mn)之濃度極低,於接合界面,可抑制微細之金屬間化合物之析出,可抑制陶瓷基板與銅板之接合界面附近被析出硬化。因此,即使負荷嚴酷之冷熱周期之時,可抑制陶瓷基板之破裂之產生,冷熱周期可靠性亦優異。
本發明之絕緣電路基板中,在從前述銅板與前述陶瓷基板之接合界面,向前述銅板側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Al之濃度成為2原子%以下為佳。
此時,於接合界面中,不純物元素之Al之濃度則如上述被限制之故,更可抑制陶瓷基板與銅板之接合界面附近被析出硬化。
本發明之絕緣電路基板中,在從前述銅板與前述陶瓷基板之接合界面,向前述銅板側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Si之濃度成為2原子%以下為佳。
此時,於接合界面中,不純物元素之Si之濃度則如上述被限制之故,更可抑制陶瓷基板與銅板之接合界面附近被析出硬化。
本發明之絕緣電路基板中,在從前述銅板與前述陶瓷基板之接合界面,向前述銅板側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Zn與Mn之合計濃度成為2原子%以下為佳。
此時,於接合界面中,不純物元素之Zn與Mn之合計濃度則如上述被限制之故,更可抑制陶瓷基板與銅板之接合界面附近被析出硬化。
[發明效果]
根據本發明之時,可提供即使負荷嚴酷之冷熱周期之時,抑制陶瓷構件之破裂之產生,冷熱周期可靠性優異之銅/陶瓷接合體、及由此銅/陶瓷接合體所成絕緣電路基板。
以下,對於本發明之實施形態,參照附件圖面加以說明。
關於本實施形態之銅/陶瓷接合體係接合做為陶瓷所成陶瓷構件的陶瓷基板11、和做為銅或銅合金所成銅構件之銅板22(電路層12)及銅板23(金屬層13)而成的絕緣電路基板10。於圖1,顯示具備本實施形態之絕緣電路基板10之功率模組1。
此功率模組1係具備配設電路層12及金屬層13之絕緣電路基板10、和於電路層12之一方的面(圖1中之上面),隔著接合層2加以接合之半導體元件3、和配置於金屬層13之另一方側(圖1中之下側)之散熱片30。
半導體元件3係以Si等之半導體材料構成。此半導體元件3與電路層12係隔著接合層2加以接合。
接合層2係例如以Sn-Ag系、Sn-In系、或Sn-Ag-Cu系之銲錫材所構成。
散熱片30係發散來自前述之絕緣電路基板10之熱。此散熱片30係銅或銅合金所構成,本實施形態中,係以磷脫氧銅所構成。於此散熱片30中,設有為流動冷卻用之流體之流路31。
於本實施形態中,散熱片30與金屬層13則經由銲錫材所成銲錫層32加以接合。此銲錫層32係例如以Sn-Ag系、Sn-In系、或Sn-Ag-Cu系之銲錫材所構成。
本實施形態之絕緣電路基板10係如圖1所示,具備陶瓷基板11、和配設於此陶瓷基板11之一方之面(圖1中之上面)的電路層12,和配設於陶瓷基板11之另一方面(圖1中之下面)之金屬層13。
陶瓷基板11係以絕緣性及散熱性優異之氮化矽(Si3
N4
)、氮化鋁(AlN)、氧化鋁(Al2
O3
)等之陶瓷所構成。本實施形態中,陶瓷基板11係尤其以散熱性優異之氮化鋁(AlN)所構成。陶瓷基板11之厚度係例如設定於0.2mm以上1.5mm以下之範圍內,本實施形態中,設定在0.635mm。
電路層12係如圖4所示,此陶瓷基板11之一方之面(圖4中之上面),經由接合銅或銅合金所成銅板22加以形成。
本實施形態中,電路層12係將無氧銅之軋板,接合於陶瓷基板11而形成。
成為電路層12之銅板22之厚度係例如設定於0.1mm以上2.0mm以下之範圍內,本實施形態中,設定在0.6mm。
銅板22之不純物(Al、Si、Zn、Mn)之合計濃度係0.1mass%以下為佳,更佳為0.04mass%以下。
做為銅板22,可使用韌煉銅。
金屬層13係如圖4所示,於陶瓷基板11之另一方之面(圖4中之下面),經由接合銅或銅合金所成銅板23加以形成。
本實施形態中,金屬層13係將無氧銅之軋板,接合於陶瓷基板11而形成。
成為金屬層13之銅板23之厚度係例如設定於0.1mm以上2.0mm以下之範圍內,本實施形態中,設定在0.6mm。
銅板23之不純物(Al、Si、Zn、Mn)之合計濃度係0.1mass%以下為佳,更佳為0.04mass%以下。
做為銅板23,可使用韌煉銅。
於陶瓷基板11與電路層12(金屬層13)之接合界面中,如圖2所示,在從陶瓷基板11與電路層12(及金屬層13)之接合界面,向前述電路層12(及金屬層13)側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Al、Si、Zn、Mn之合計濃度成為3原子%以下。由此,於接合界面中,可抑制微細之金屬間化合物之析出,可抑制陶瓷基板11與電路層12(及金屬層13)之接合界面附近被析出硬化,可抑制冷熱周期負荷時之陶瓷基板11之破裂之產生。
為了在更嚴酷之環境下,抑制陶瓷基板11破裂之產生,Al、Si、Zn、Mn之合計濃度成為2原子%以下者為佳。
於本實施形態中,如上述測定之Al之濃度成為2原子%以下為佳,更佳為1.5原子%以下。
如上述測定之Si之濃度成為2原子%以下為佳,更佳為1.5原子%以下。
如上述測定之Zn與Mn之合計濃度成為2原子%以下為佳,更佳為1原子%以下。
以下,對於關於本實施形態之絕緣電路基板10之製造方法,參照圖3及圖4加以說明。
(陶瓷基板洗淨工程S01)
首先,準備陶瓷基板11,進行此陶瓷基板11之接合面之洗淨。於本實施形態中,如圖4所示,使用處理液51,洗淨陶瓷基板11之表面。首先,陶瓷基板11之表面係於處理液51,浸漬陶瓷基板11加以洗淨亦可。處理條件係對應使用之處理液51加以設定者為佳。於以下,顯示使用各種處理液時之處理條件。
使用鹽酸之時,令HCl之濃度為8mass%以上20mass%以下,令處理溫度為28℃以上40℃以下,令處理時間為3分以上10分以下。
使用硝酸之時,令HNO3
之濃度成為5mass%以上30mass%以下之水溶液,令處理溫度為28℃以上40℃以下,令處理時間為3分以上10分以下。
使用氫氧化鈉水溶液之時,令NaOH之濃度為1mass%以上4mass%以下,令處理溫度為28℃以上40℃以下,令處理時間為1分以上5分以下。
使用碳酸氫鈉水溶液之時,令NaHCO3
之濃度為1mass%以上4mass%以下,令處理溫度為28℃以上40℃以下,令處理時間為1分以上5分以下。
(接合材配置工程S02)
接著,如圖4所示,於成為電路層12之銅板22與陶瓷基板11之間,以及成為金屬層13之銅板23與陶瓷基板11之間,各別配置接合材。
做為接合材,可使用Mg單獨,Mg與活性金屬(選自Ti、Zr、Hf、Nb之1種或2種以上)之組合、或Mg與Cu之組合之接合材。
接合材係做為電糊或箔材可配置於銅板與陶瓷基板之間。使用電糊之時,做為電糊之填料,可使用Mg(Mg粉末)或活性金屬(活性金屬粉末)。做為填料,可使用此等之氫化物。
使用箔材之時,可各別重疊配置Mg箔與活性金屬箔。又,可使用Mg與活性金屬之合金箔。更且,可將Mg箔與活性金屬箔做為覆蓋層加以使用。
可於銅板與陶瓷基板之間,配置Mg蒸鍍膜,或Mg與活性金屬之蒸鍍膜,將此做為接合材。蒸鍍膜係可設於銅板或陶瓷基板之至少一方,亦可設於雙方。成為Mg與活性金屬之蒸鍍膜之時,可進行共蒸鍍,或各別蒸鍍Mg與活性金屬,亦可做為層積之層。蒸鍍膜係例如可以濺鍍法或蒸鍍法加以形成。
做為接合材,使用活性金屬之時,活性金屬之量可成為0.4μmol/cm2
以上18.8μmol/cm2
以下加以配置。此時,Mg之量係可成為14μmol/cm2
以上86μmol/cm2
以下。
於配設活性金屬之時,經由與陶瓷基板之反應,接合界面之Al濃度及Si濃度會有上昇之疑慮之故,需充分控制陶瓷基板之清潔或配置之Mg、活性金屬、Cu之不純物量。
配置之Mg之純度係成為99.0%以上為佳,不純物(Al、Si、Zn、Mn)之合計濃度係0.1mass%以下為佳,更佳為0.3mass%以下。
配置之活性金屬之純度係成為99.2%以上為佳,不純物(Al、Si、Zn、Mn)之合計濃度係0.5mass%以下為佳,更佳為0.3mass%以下。
此等不純物之濃度及純度係可以ICP發光分光分析法加以測定。
使用Mg與Cu組合之接合材之時,可與使用活性金屬之時同樣地被使用。
本實施形態中,於銅板22與陶瓷基板11之間,以及銅板23與陶瓷基板11之間,各別配設有Mg箔25。
於Mg箔25,Al、Si、Zn、Mn之合計濃度則限制於1mass%以下。
此接合材配置工程S02中,令配置之Mg量成為7μmol/cm2
以上143μmol/cm2
以下之範圍內。
(層積工程S03)
接著,將銅板22與陶瓷基板11,隔著Mg箔25層積的同時,將陶瓷基板11與銅板23,隔著Mg箔25加以層積。
(接合工程S04)
接著,將層積之銅板22、Mg箔25、陶瓷基板11,Mg箔25、銅板23,加壓於層積方向的同時,裝入真空爐內加熱,接合銅板22與陶瓷基板11與銅板23。
接合工程S04之加壓荷重係以0.049MPa以上3.4MPa以下之範圍內為佳。
接合工程S04之加熱溫度係成為500℃以上850℃以下之範圍內為佳。加熱溫度之保持時間係成為5min以上180min以下之範圍內為佳。
接合工程S04之真空度係以1×10-6
Pa以上5×10-2
Pa以下之範圍內為佳。
如以上所述,經由陶瓷基板洗淨工程S01、和接合材配置工程S02、和層積工程S03、和接合工程S04,製造本實施形態之絕緣電路基板10。
(散熱片接合工程S05)
接著,於絕緣電路基板10之金屬層13之另一方的面側,接合散熱片30。
將絕緣電路基板10與散熱片30,隔著銲錫材加以層積層,將入加熱爐、隔著第2銲錫層32,銲錫接合絕緣電路基板10與散熱片30。
(半導體元件接合工程S06)
接著,於絕緣電路基板10之電路層12之一方的面,將半導體元件3經由銲錫接合。
經由上述之工程,製出圖1所示之功率模組1。
根據如以上構成之本實施形態之絕緣電路基板10(銅/陶瓷接合體),在從電路層12(及金屬層13)與陶瓷基板11之接合界面,向電路層12側(及金屬層13側)遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Al、Si、Zn、Mn之合計濃度成為3原子%以下之故,於接合界面,不純物元素(Al、Si、Zn、Mn)之濃度充分為低,可於接合界面抑制微細之金屬間化合物之析出,抑制陶瓷基板11與電路層12(及金屬層13)之接合界面附近被析出硬化。因此,即使負荷嚴酷之冷熱周期之時,可抑制陶瓷基板11之破裂之產生,得冷熱周期可靠性優異之絕緣電路基板10。
於本實施形態中,上述接合界面之Al之濃度限制於2原子%以下之時,或上述接合界面之Si之濃度限制於2原子%以下之時,更且上述之Zn與Mn之合計濃度限制於2原子%以下之時,更可抑制陶瓷基板11與電路層12(及金屬層13)之接合界面附近被析出硬化。
本實施形態中,於陶瓷基板洗淨工程S01中,洗淨陶瓷基板11之接合面之同時,於接合材配置工程S02,將配設之Mg之不純物(Al、Si、Zn、Mn)之合計濃度限制於1mass%以下之故,可將上述接合界面之不純物(Al、Si、Zn、Mn)之合計濃度限制於3原子%以下。
本實施形態中,於接合材配置工程S02中,令Mg量成為7μmol/cm2
以上143μmol/cm2
以下之範圍內之故,於界面反應可充分得到必要之液相。
因此,可得確實接合銅板22、23與陶瓷基板11之絕緣電路基板10(銅/陶瓷接合體)。
以上,雖對於本發明的實施形態做了說明,但本發明非限定於此,在不脫離該發明之技術思想之範圍下,可適切加以變更。
例如,本實施形態中,雖於絕緣電路基板搭載半導體元件構成功率模組者做了說明,但非限定於此。例如,可於絕緣電路基板之電路層搭載LED元件構成LED模組亦可,於絕緣電路基板之電路層搭載熱電元件構成熱電模組亦可。
本實施形態之絕緣電路基板中,就電路層與金屬層皆經由銅或銅合金所成銅板加以構成做了說明,但未限定於此。
例如只要是電路層與陶瓷基板以本發明之銅/陶瓷接合體構成,不限定金屬層之材質或接合方法,可沒有金屬層,亦可為金屬層由鋁或鋁合金所成,亦可為以銅與鋁之層積體加以構成。
另一方面,金屬層與陶瓷基板以本發明之銅/陶瓷接合體加以構成時,不限定電路層之材質或接合方法,可為電路層以鋁或鋁合金構成,亦可為以銅與鋁之層積體加以構成。
本實施形態之絕緣電路基板中,做為陶瓷基板,雖列舉以氮化鋁(AlN)構成者為例做了說明,但非限定於此,亦可使用氧化鋁(Al2
O3
)、氮化矽(Si3
N4
)等之其他之陶瓷基板。
[實施例]
以下,對於確認本發明之效果所進行之確認實驗結果加以說明。
首先,準備記載於表1、2之陶瓷基板(40mm×40mm)。厚度係AlN及Al2
O3
成為0.635mm、Si3
N4
成為0.32mm。
然後,使用示於表1、2之處理液,在以下之條件下,洗淨處理陶瓷基板之表面。
於表1、2,「HCl」係使用HCl之濃度為12mass%之鹽酸,在處理溫度35℃、處理時間5分之條件下實施。
於表1、2,「HNO3
」係使用HNO3
之濃度為10mass%之水溶液,在處理溫度35℃、處理時間7分之條件下實施。
於表1、2,「NaOH」係使用NaOH之濃度為1mass%之水溶液,在處理溫度30℃、處理時間1分之條件下實施。
於表1、2,「NaHCO3
」係使用NaHCO3
之濃度為1.5mass%之水溶液,在處理溫度30℃、處理時間1分之條件下實施。
比較例1、3、11、13中,未實施陶瓷基板之洗淨處理。
比較例2、12中,使用HNO3
之濃度為2mass%之水溶液,在處理溫度35℃、處理時間20分之條件下實施。
比較例4中,使用NaOH之濃度為8mass%之水溶液,在處理溫度30℃、處理時間3分之條件下實施。
比較例5、14中,使用HCl之濃度為3mass%之鹽酸,在處理溫度35℃、處理時間1分之條件下實施。
比較例15中,使用NaHCO3
之濃度為0.5mass%之水溶液,在處理溫度30℃、處理時間3分之條件下實施。
如上所述,於實施洗淨處理之陶瓷基板之兩面,將無氧銅所成銅板(37mm×37mm×厚0.3mm),使用表1、2所示接合材,接合銅板與陶瓷基板,得到絕緣電路基板(銅/陶瓷接合體)。接合時之真空爐之真空度為3×10-3
Pa、接合溫度成為800℃,保持時間為60分,加壓荷重為0.98MPa。
將做為接合材使用之各元素之原料之純度示於表1、2。接合材係使用箔材。
對於所得絕緣電路基板(銅/陶瓷接合體),針對接合界面附近之不純物濃度、及、冷熱周期負荷後之陶瓷基板之破裂,如以下加以評估。
(接合界面之不純物濃度)
使用掃描穿透式電子顯微鏡(FEI公司製Titan ChemiSTEM)及EDS檢測器(Thermo Scientific公司製NSS7),實施銅板與陶瓷基板之接合界面附近之濃度測定。
於加速電壓200kV,在從接合界面,向銅板側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,測定活性金屬(Ti、Zr、Nb、Hf)、Al、Si、Zn、Mn之各濃度。測定在5處所進行,將測定之5處所之平均,做為各元素之接合界面之濃度。將評估結果示於表1、2。
(冷熱周期負荷後之陶瓷基板之破裂)
對應於陶瓷基板之材質,通爐下述環境之後,經由SAT,檢查銅板與陶瓷基板之接合界面,判定陶瓷破裂之有無。將評估結果示於表1。
AlN、Al2
O3
之時:進行-78℃×2min←→350℃×2min 10次
Si3
N4
之時:進行-78℃×2min←→350℃×2min 20次
於接合界面中,Al、Si、Zn、Mn之合計濃度超過3原子%之比較例1-5及比較例11-15中,於冷熱周期負荷後,確認有陶瓷基板之破裂。
比較例1、3、11、13中,未實施陶瓷基板之表面之洗淨處理,接合材之元素純度低之故,於接合界面,Al、Si、Zn、Mn之合計濃度超過3原子%,於冷熱周期負荷後,確認有陶瓷基板之破裂。
比較例2、4、5、12、14、15中,雖實施陶瓷基板之表面處理,接合材之元素(Mg)純度低之故,於接合界面,Al、Si、Zn、Mn之合計濃度超過3原子%,於冷熱周期負荷後,確認有陶瓷基板之破裂。
對此,於接合界面中,Al、Si、Zn、Mn之合計濃度限制於3原子%以下之本發明例1-8及本發明例11-18中,於冷熱周期負荷後,未確認有陶瓷基板之破裂。
如以上結果,根據本發明例時,確認到可提供即使負荷嚴酷之冷熱周期之時,抑制陶瓷構件之破裂之產生,冷熱周期可靠性優異之銅/陶瓷接合體、及由此銅/陶瓷接合體所成絕緣電路基板。
[產業上的可利用性]
根據本發明之時,可提供即使負荷嚴酷之冷熱周期之時,抑制陶瓷構件之破裂之產生,冷熱周期可靠性優異之銅/陶瓷接合體、及由此銅/陶瓷接合體所成絕緣電路基板。
10:絕緣電路基板(銅/陶瓷接合體)
11:陶瓷基板(陶瓷構件)
12:電路層(銅構件)
13:金屬層(銅構件)
[圖1]關於使用本發明之實施形態之絕緣電路基板之功率模組之概略說明圖。
[圖2]關於本發明之實施形態之絕緣電路基板之電路層(金屬層)與陶瓷基板之接合界面的擴大說明圖。
[圖3]有關本發明的實施形態之絕緣電路基板之製造方法之流程圖。
[圖4]有關本發明的實施形態之絕緣電路基板之製造方法之概略說明圖。
11:陶瓷基板(陶瓷構件)
12:電路層(銅構件)
13:金屬層(銅構件)
Claims (8)
- 一種銅/陶瓷接合體,接合銅或銅合金所成銅構件、和陶瓷構件而成之銅/陶瓷接合體,其特徵係 在從前述銅構件與前述陶瓷構件之接合界面,向前述銅構件側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值設成為100原子%時,Al、Si、Zn、Mn之合計濃度為3原子%以下。
- 如請求項1記載之銅/陶瓷接合體,其中,在從前述銅構件與前述陶瓷構件之接合界面,向前述銅構件側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Al之濃度為2原子%以下。
- 如請求項1或請求項2記載之銅/陶瓷接合體,其中,在從前述銅構件與前述陶瓷構件之接合界面,向前述銅構件側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Si之濃度為2原子%以下。
- 如請求項1至請求項3之任一項記載之銅/陶瓷接合體,其中,在從前述銅構件與前述陶瓷構件之接合界面,向前述銅構件側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Zn與Mn之合計濃度為2原子%以下。
- 一種絕緣電路基板,於陶瓷基板之表面,接合銅或銅合金所成銅板而成的絕緣電路基板,其特徵係 在從前述銅板與前述陶瓷基板之接合界面,向前述銅板側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Al、Si、Zn、Mn之合計濃度為3原子%以下。
- 如請求項5記載之絕緣電路基板,其中,在從前述銅板與前述陶瓷基板之接合界面,向前述銅板側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Al之濃度為2原子%以下。
- 如請求項5或請求項6記載之絕緣電路基板,其中,在從前述銅板與前述陶瓷基板之接合界面,向前述銅板側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Si之濃度為2原子%以下。
- 如請求項5至請求項7之任一項記載之絕緣電路基板,其中,在從前述銅板與前述陶瓷基板之接合界面,向前述銅板側遠離1000nm之位置,經由能量散射X射線譜法,進行濃度測定,令Cu、Mg、Ti、Zr、Nb、Hf、Al、Si、Zn、Mn之合計值成為100原子%時,Zn與Mn之合計濃度為2原子%以下。
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