TW202105537A - 電子零件裝置的製造方法及用於其的積層膜 - Google Patents

電子零件裝置的製造方法及用於其的積層膜 Download PDF

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TW202105537A
TW202105537A TW109107306A TW109107306A TW202105537A TW 202105537 A TW202105537 A TW 202105537A TW 109107306 A TW109107306 A TW 109107306A TW 109107306 A TW109107306 A TW 109107306A TW 202105537 A TW202105537 A TW 202105537A
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adhesive layer
layer
electronic component
sealing
conductive
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TW109107306A
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TWI822970B (zh
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柴田智章
小川剛
李欣蓉
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日商日立化成股份有限公司
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Priority claimed from PCT/JP2019/029888 external-priority patent/WO2021019697A1/ja
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Abstract

本發明揭示一種電子零件的製造方法，包括：於包括支撐體、暫時固定材層、及接著層的複合基材的接著層上，使與接著層接觸的連接部介隔存在於接著層與電子零件之間同時配置多個電子零件的步驟；藉由使接著層硬化而將多個電子零件固定於複合基材的步驟；形成密封電子零件的密封層的步驟；藉由自接著層剝離暫時固定材層而獲得密封結構體的步驟；以及藉由自接著層側研磨密封結構體而形成電路面的步驟。多個電子零件包含IC晶片、及晶片型被動零件。被動零件藉由如下方法而配置於接著層上，所述方法依序包括：將圖案形成用的導電體前驅物作為連接部而配置於接著層上、將被動零件載置於導電體前驅物上、藉由對導電體前驅物進行加熱而將導電圖案形成為連接部。

Description

電子零件裝置的製造方法及用於其的積層膜
本發明是有關於一種電子零件裝置的製造方法及用於其的積層膜。
作為製造具有多個半導體晶片的半導體封裝的方法，已知如下方法：於設置於載體基板上的暫時接著劑層上排列半導體晶片（晶粒（die）），密封半導體晶片後將載體基板剝離（例如，專利文獻1）。 [現有技術文獻] [專利文獻]
[專利文獻1]國際公開第2017/057355號
[發明所欲解決之課題] 具有積體電路（integrated circuit，IC）晶片及被動零件的複合電子零件裝置亦期待可藉由如下方法來有效地製造，即以於暫時接著劑層之類的暫時固定材層上臨時固定該些構成零件的狀態形成密封層，之後剝離暫時固定材層。
但是，於形成密封層的步驟期間，存在IC晶片及被動零件自規定的位置移動的所謂的晶粒偏移的問題。特別是於一併密封尺寸及高度不同的多種電子零件的情況下，有晶粒偏移的問題更明顯之虞。因此，本發明的一個方面在於提供一種抑制電子零件裝置的製造中的晶粒偏移的方法。 [解決課題之手段]
本發明的一個方面是有關於一種電子零件裝置的製造方法，所述電子零件裝置包括含有IC晶片、及晶片型被動零件的多個電子零件。本發明的一個方面的方法包括以下步驟： 準備複合基材的步驟，所述複合基材包括支撐體、暫時固定材層、及硬化性的接著層，並且該些為依序積層； 於所述複合基材的所述接著層上，使與所述接著層接觸的連接部介隔存在於所述接著層與電子零件之間同時配置多個所述電子零件的步驟； 藉由使所述接著層硬化而將所述多個電子零件固定於所述複合基材的步驟； 於所述接著層上形成密封所述電子零件的密封層的步驟； 使所述密封層硬化的步驟； 藉由自所述接著層剝離所述暫時固定材層而獲得具有所述接著層、所述電子零件及所述密封層的密封結構體的步驟；以及 藉由自所述接著層側研磨所述密封結構體而形成所述密封層及所述連接部露出的電路面的步驟。
所述多個電子零件包含IC晶片、及晶片型被動零件。所述IC晶片具有本體部及設置於該本體部的其中一主面側的凸塊。所述IC晶片是以作為所述連接部的所述凸塊與所述接著層接觸的方向配置於所述接著層上。所述被動零件藉由如下方法而配置於所述接著層上，所述方法依序包括：將圖案形成用的導電體前驅物作為所述連接部而配置於所述接著層上、將所述被動零件載置於所述導電體前驅物上、藉由對所述導電體前驅物進行加熱而將導電圖案形成為所述連接部。
本發明的另一方面是有關於一種電子零件裝置製造用積層膜，其具有暫時固定材層、及設置於所述暫時固定材層上的硬化性的接著層，且於所述方法中用於準備所述複合基材。 [發明的效果]
於本發明的一個方面的方法中，於利用硬化的接著層將電子零件固定於複合基材的狀態下形成密封層，因此電子零件難以移動。
以下，對本發明的若干實施形態進行詳細說明。其中，本發明並不限定於以下的實施形態。
圖1的（a）～圖1的（d）、圖2的（e）～圖2的（g）、圖3的（h）～圖3的（j）及圖4是表示電子零件裝置的製造方法的一實施形態的步驟圖，所述電子零件裝置包括含有IC晶片、及晶片型被動零件的多個電子零件。
準備圖1的（a）所示的複合基材1。複合基材1包括支撐體11、暫時固定材層13、及硬化性的接著層15。暫時固定材層13及接著層15為依序積層於支撐體11上。
支撐體11只要具有能夠支撐電子零件的程度的強度及剛性即可，其材質並無特別限定。例如，支撐體11可為矽晶圓、玻璃板、或不鏽鋼板。支撐體11的厚度並無特別限制，例如可為200 μm～2000 μm。亦可於支撐體11的暫時固定材層13側的面上設置用於定位電子零件的對準標記。對準標記可使用金屬、樹脂等任意的材料來形成。於設有對準標記的情況下，暫時固定材層13及接著層15可為能夠視認對準標記的程度的透明。
接著層15包含硬化後不可逆地接著於被黏附體的硬化性接著劑。接著層15的厚度例如可為1 μm～50 μm。亦可自作為半導體用接著劑而已知者中選擇形成接著層15的硬化性接著劑（例如，參照國際公開第2017/073630號、及日本專利第3117971號公報）。
形成接著層15的硬化性接著劑例如含有熱硬化性樹脂及其硬化劑。熱硬化性樹脂是可藉由加熱來形成交聯結構的化合物。熱硬化性樹脂亦可具有10000以下的分子量。作為熱硬化性樹脂的例子，可列舉環氧樹脂、及丙烯酸樹脂。硬化劑是與熱硬化性樹脂反應並與熱硬化性樹脂一同形成交聯結構的化合物、或者使熱硬化性樹脂形成交聯結構的反應開始的化合物。作為硬化劑，例如可列舉：酚樹脂系硬化劑、酸酐系硬化劑、胺系硬化劑、咪唑系硬化劑、膦系硬化劑、偶氮化合物及有機過氧化物。硬化性接著劑亦可進而含有熱塑性樹脂、填料（例如二氧化矽）等其他成分。
暫時固定材層13具有可自硬化後的接著層15剝離的程度的剝離性。暫時固定材層13的厚度例如可為1 μm～100 μm。形成暫時固定材層13的材料可自於電子零件裝置的製造中出於暫時固定或暫時接著的目的而使用的材料中選擇（例如，參照專利文獻1）。
複合基材1例如可藉由在支撐體11上依序形成暫時固定材層13、及接著層15的方法來獲得。亦可分別準備膜狀的暫時固定材層13及接著層15，藉由熱壓接而將該些依序積層。此時，就防止氣泡的捲入的觀點而言，亦可於減壓下積層膜狀的暫時固定材層13及接著層15。或者，亦可預先製作具有暫時固定材層13及接著層15的積層膜，將該積層膜積層於複合基材1上。
圖1的（a）表示於準備的複合基材1的接著層15上配置圖案形成用的導電體前驅物21a的步驟。導電體前驅物21a的圖案包含配置有後述的被動零件的部分。導電體前驅物21a例如可藉由網版印刷之類的印刷法來配置於接著層15上。
導電體前驅物21a亦可藉由加熱而硬化來形成導電體，可自本領域技術人員通常使用的導電體前驅物中任意選擇。例如，導電體前驅物21a亦可為包含各種金屬粒子或碳粒子之類的導電性粒子的硬化性的導電性膏。導電體前驅物亦可為包含能夠進行暫態液相燒結的金屬粒子的暫態液相燒結型金屬接著劑。暫態液相燒結型金屬接著劑的詳情於後加以敘述。
圖1的（b）表示於導電體前驅物21a上載置晶片型被動零件31、被動零件32的步驟。被動零件31、被動零件32是根據電子零件裝置的設計來選擇，例如亦可為電阻、電容器或該些的組合。被動零件31、被動零件32可使用通常的晶片搭載機而載置於導電體前驅物21a上。
圖1的（c）表示於接著層15上載置IC晶片41及IC晶片42的步驟。IC晶片41及IC晶片42是具有本體部41A或本體部42A、與排列於本體部41A或本體部42A的其中一主面側的多個凸塊41B或凸塊42B的所謂的倒裝型晶片零件。IC晶片41及IC晶片42是以作為連接部發揮功能的凸塊41B或凸塊42B與接著層15接觸的方向配置於接著層15上。凸塊41B及凸塊42B的前端部可部分性地埋入接著層15中。亦可於本體部41A、本體部42A與接著層15分離的狀態下，將IC晶片41、IC晶片42配置於接著層15上。IC晶片41、IC晶片42例如可使用具有載台及搭載頭的晶片搭載機而載置於接著層15上。可藉由調整載台及搭載頭的溫度及壓力等條件來將凸塊41B及凸塊42B的前端部的一部分埋入接著層15中。
將被動零件31、被動零件32及IC晶片41、IC晶片42配置於接著層15上的順序可任意變更。於將被動零件31、被動零件32及IC晶片41、IC晶片42配置於接著層15上後，使接著層15進行硬化。於將被動零件31、被動零件32及IC晶片41、IC晶片42配置於接著層15上的時間點，接著層15亦可為B階。接著層15大多情況下藉由加熱而硬化。藉由硬化的接著層15，將被動零件31、被動零件32及IC晶片41、IC晶片42牢固地固定於複合基材1。與接著層15的硬化同時或者於接著層15硬化之後對載置有被動零件31、被動零件32的導電體前驅物21a進行加熱，藉此形成作為導電體前驅物21a的硬化體的導電圖案21。藉此，將被動零件31、被動零件32以導電圖案21介隔存在於被動零件31、被動零件32與接著層15之間的狀態加以固定。
圖1的（d）表示於接著層15上形成密封IC晶片41、IC晶片42及被動零件31、被動零件32的密封層5的步驟。密封層5形成為覆蓋IC晶片41、IC晶片42及被動零件31、被動零件32整體，並且亦填充該些電子零件與接著層15之間的間隙。其中，間隙亦可不完全填充。密封層5例如可藉由壓縮方式或轉移方式的成型機而於模具內形成。或者，亦可使用膜狀的密封材來形成密封層5（例如，參照國際公開第2015/186744號）。於所述情況下，就防止氣泡的捲入的觀點而言，亦可於減壓下積層膜狀的密封材。
圖2的（e）表示於密封層5內形成自密封層5的與接著層15為相反側的面5S朝向接著層15延伸的貫通孔5A的步驟。貫通孔5A可完全貫通密封層5，亦可於貫通孔5A的底部殘存密封層5。貫通孔5A可藉由對密封層5的與接著層15相反側的面5S將模具按入的壓印法來形成。於壓印法中，可使用具有與貫通孔5A對應的突起部的模具。可一面加熱接著層15、模具或該些兩者，一面將模具的突起部按入至面5S。通常，於形成貫通孔5A之後，藉由加熱使密封層5硬化。
圖2的（f）表示藉由在貫通孔5A中填充導電性通孔用的導電體前驅物，之後對貫通孔5A內的導電體前驅物進行加熱來形成導電性通孔22的步驟。將導電體前驅物填充至貫通孔5A的方法亦可為網版印刷等印刷法。亦可藉由多次印刷將導電體前驅物填充至貫通孔5A。亦可於減壓下將導電體前驅物填充至貫通孔5A。可藉由對貫通孔5A內的導電體前驅物進行加熱而形成作為導電體前驅物的硬化體的導電性通孔22。
貫通孔5A或導電性通孔22的最大寬度W例如可為10 μm～200 μm。貫通孔5A或導電性通孔22的高度H例如可為30 μm～500 μm。於導電性通孔22的高度H大時，換言之於導電性通孔22的縱橫比大時，亦可利用壓印法及使用導電體前驅物的方法來有效地形成導電性通孔22。
導電性通孔用的導電體前驅物可為含有多個金屬粒子及分散有該多個金屬粒子的有機黏合劑的導電性膏。作為導電性前驅物的導電性膏可為包含能夠進行暫態液相燒結的多個金屬粒子的暫態液相燒結型金屬接著劑。於所述情況下，藉由導電性膏的燒結，多個金屬粒子彼此熔合，藉此形成作為包含金屬燒結體的電體的導電性通孔22。此處，所謂「暫態液相燒結」（Transient Liquid Phase Sintering）亦稱為TLPS，一般是指藉由低熔點金屬在粒子界面的加熱引起的向液相的轉移與高熔點金屬向所形成的液相的反應擴散而進行的燒結。根據暫態液相燒結，所形成的金屬燒結體的熔點可超過用於燒結的加熱溫度。若藉由低溫加熱形成導電性通孔，則存在可特別容易地將暫時固定材層13自接著層15剝離的傾向。
能夠進行暫態液相燒結的多個金屬粒子亦可包含高熔點金屬與低熔點金屬的組合。多個金屬粒子可分別包含含有高熔點金屬粒子的第1金屬粒子及含有低熔點金屬的第2金屬粒子，高熔點金屬及低熔點金屬亦可包含於一個金屬粒子中。
於導電體前驅物包含能夠進行暫態液相燒結的多個金屬粒子的情況下，可藉由將導電體前驅物加熱至多個金屬粒子的液相轉移溫度以上來形成導電性通孔22。液相轉移溫度可藉由差示掃描熱量測定（Differential scanning calorimetry，DSC），於50 ml/min的氮氣流下，以10℃/min的昇溫速度將多個金屬粒子自25℃加熱至300℃的條件下測定。於金屬粒子包含多種金屬的情況下，於最低溫度下觀測到的液相轉移的溫度被視為金屬粒子的液相轉移溫度。例如，Sn-3.0Ag-0.5Cu合金的液相轉移溫度為217℃。
於能夠進行暫態液相燒結的多個金屬粒子包含含有高熔點金屬的第1金屬粒子與含有低熔點金屬的第2金屬粒子的組合的情況下，第1金屬粒子相對於第2金屬粒子的質量比可為2.0～4.0、或2.2～3.5。
含有高熔點金屬及低熔點金屬的金屬粒子例如可藉由利用鍍敷、蒸鍍等在包含其中一金屬的金屬粒子的表面形成包含另一金屬的層而獲得。亦可藉由碰撞等將包含其中一金屬的金屬粒子與包含另一金屬的金屬粒子加以複合。
高熔點金屬可為選自由Au、Cu、Ag、Co及Ni所組成的群組中的至少一種。低熔點金屬可為In、Sn或該些的組合。作為高熔點金屬與低熔點金屬的組合的例子，可列舉：Au與In的組合、Cu與Sn的組合、Ag與Sn的組合、Co與Sn的組合以及Ni與Sn的組合。
Cu與Sn的組合藉由燒結而生成銅-錫金屬化合物（Cu6 Sn5 ）。由於該反應於250℃附近進行，故包含Cu與Sn的組合的導電體前驅物可藉由使用回流焊爐等一般設備的加熱而燒結。Sn可作為Sn金屬單體或者作為包含Sn的合金而包含於金屬粒子中。作為包含Sn的合金的例子，可列舉Sn-3.0Ag-0.5Cu合金。Sn-3.0Ag-0.5Cu合金以合金的質量為基準，包含3.0質量%的Ag及0.5質量%的Cu。
以導電體前驅物的質量為基準，導電體前驅物中的金屬粒子的含量可為80質量%以上、85質量%以上、或88質量%以上，亦可為98質量%以下。於導電體前驅物包含後述的溶劑的情況下，此處的含量為以溶劑以外的成分的合計質量為基準的比例。
金屬粒子的平均粒徑可為0.5 μm～80 μm、1 μm～50 μm、或1 μm～30 μm。此處的平均粒徑是指藉由雷射繞射式粒度分佈計（例如，貝克曼-庫爾特（beckman-coulter）股份有限公司，LS 13 320型雷射散射繞射法粒度分佈測定裝置）而測定的體積平均粒徑。
導電體前驅物中的有機黏合劑可包含熱塑性樹脂。熱塑性樹脂可具有較金屬粒子的液相轉移溫度更低的軟化點。熱塑性樹脂的軟化點是指藉由熱機械分析法而測定的值。藉由熱機械分析法而測定的軟化點是對於將熱塑性樹脂成膜而獲得的厚度100 μm的膜以昇溫速度10℃/min加熱，同時以49 mN的應力沿厚度方向壓縮時，觀測到80 μm的位移時的溫度。作為測定裝置，例如使用熱機械分析裝置（TMA8320，理學（Rigaku）股份有限公司製造，測定用探針：壓縮加權法標準型）。
熱塑性樹脂的軟化點可為較金屬粒子的液相轉移溫度低5℃以上的溫度、低10℃以上的溫度、或低15℃以上的溫度。熱塑性樹脂的軟化點可為40℃以上、50℃以上、或60℃以上。
熱塑性樹脂例如可包含選自由聚醯胺樹脂、聚醯胺醯亞胺樹脂、聚醯亞胺樹脂及聚胺基甲酸酯樹脂所組成的群組中的至少一種。熱塑性樹脂可包含聚氧伸烷基或聚矽氧烷基。聚氧伸烷基可為聚氧伸乙基、聚氧伸丙基或該些的組合。
熱塑性樹脂可為選自由包含聚氧伸烷基鏈或聚矽氧烷鏈的聚醯胺樹脂、聚醯胺醯亞胺樹脂、聚醯亞胺樹脂及聚胺基甲酸酯樹脂所組成的群組中的至少一種樹脂。例如，藉由將具有聚氧伸烷基或聚矽氧烷基的二胺化合物、或者具有聚氧伸烷基或聚矽氧烷基的二醇化合物用作單體，可於該些樹脂中導入聚氧伸烷基或聚矽氧烷基。
以導電體前驅物的質量為基準，導電體前驅物中的熱塑性樹脂的含量可為5質量%～30質量%、6質量%～28質量%、或8質量%～25質量%。於導電體前驅物包含後述的溶劑的情況下，此處的含量為以溶劑以外的成分的合計質量為基準的比例。
有機黏合劑可包含溶劑，亦可包含溶劑及熱塑性樹脂。溶劑可為極性溶媒。溶劑的沸點可為200℃以上，亦可為300℃以下。
作為溶劑的例子，可列舉：萜品醇、硬脂醇、三丙二醇甲醚、二乙二醇、二乙二醇單乙醚（乙氧基乙氧基乙醇）、二乙二醇單己醚、二乙二醇單甲醚、二丙二醇正丙醚、二丙二醇正丁醚、三丙二醇正丁醚、1,3-丁二醇、1,4-丁二醇、丙二醇苯基醚、及2-(2-丁氧基乙氧基)乙醇等醇；檸檬酸三丁酯、γ-丁內酯、二乙二醇單乙醚乙酸酯、二丙二醇甲醚乙酸酯、二乙二醇單丁醚乙酸酯、及甘油三乙酸酯等酯；異佛爾酮等酮；N-甲基-2-吡咯啶酮等內醯胺；苯基乙腈等腈；4-甲基-1,3-二氧雜環戊烷-2-酮；以及環丁碸。溶劑可單獨使用一種或者將兩種以上組合而使用。
以導電體前驅物的質量為基準，溶劑的含量可為0.1質量%～10質量%、2質量%～7質量%、或3質量%～5質量%。
導電體前驅物中的有機黏合劑亦可進而包含熱硬化性樹脂、松香、活性劑、觸變劑等其他成分。
作為熱硬化性樹脂的例子，例如可列舉：環氧樹脂、噁嗪樹脂、雙馬來醯亞胺樹脂、酚樹脂、不飽和聚酯樹脂及矽酮樹脂。作為環氧樹脂的例子，可列舉：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、萘型環氧樹脂、聯苯酚型環氧樹脂、聯苯酚醛清漆型環氧樹脂及環式脂肪族環氧樹脂。
作為松香的例子，可列舉：脫氫松脂酸、二氫松脂酸、新松脂酸、二氫海松酸、海松酸、異海松酸、四氫松脂酸、及長葉松酸。
作為活性劑的例子，可列舉：胺基癸酸、戊烷-1,5-二羧酸、三乙醇胺、二苯基乙酸、癸二酸、鄰苯二甲酸、苯甲酸、二溴水楊酸、茴香酸、碘水楊酸、及吡啶甲酸。
作為觸變劑的例子，可列舉：12-羥基硬脂酸、12-羥基硬脂酸三甘油酯、伸乙基雙硬脂酸醯胺、六亞甲基雙油酸醯胺、及N,N'-二硬脂基己二酸醯胺。
導電體前驅物可藉由將金屬粒子與構成有機黏合劑的成分混合而獲得。用於混合的裝置例如亦可為三輥磨機、行星式混合機（planetary mixer）、行星式混合機、自轉公轉型攪拌裝置、擂潰機、雙軸混煉機、或薄層剪切分散機。
圖2的（g）表示藉由自接著層15剝離暫時固定材層13而獲得具有接著層15、被動零件31、被動零件32、IC晶片41、IC晶片42及密封層5的密封結構體50的步驟。密封結構體50的其中一主面側的再表層為接著層15。暫時固定材層13例如可藉由加熱、光照射、或機械剝離而自接著層15剝離。接著層15的一部分可分離，與暫時固定材層13一同被去除。
圖3的（h）表示自接著層15側研磨密封結構體50而去除接著層15，藉此形成露出有密封層5、導電圖案21、凸塊41B、凸塊42B及導電性通孔22的電路面CS的步驟。密封結構體50的研磨可使用通常的研磨裝置來進行。密封層5、導電圖案21、凸塊41B、凸塊42B及導電性通孔22的一部分亦可被研磨。
圖3的（i）表示於電路面CS上設置或形成再配線層6的步驟，所述再配線層6具有連接於導電圖案21、凸塊41B、凸塊42B、及導電性通孔22的配線61、與設置於配線61間的絕緣層62（絕緣膜）。配線61包含沿與再配線層6的主面平行的方向延伸存在的多層配線層61a、和沿與再配線層6的主面垂直的方向延伸存在的連結部61b。各個配線層61a的厚度並無特別限制，例如可為1 μm～30 μm。再配線層6可藉由本領域技術人員已知的通常方法來形成。關於形成再配線層的方法，例如可參照日本專利第5494766號公報。
圖3的（j）表示將連接於配線61的焊料球7配置於再配線層6上的步驟。焊料球7用作二次安裝用的連接端子。視需要進行回流焊。
圖4表示形成覆蓋密封層5的與電路面CS為相反側的面且與導電性通孔22連接的導電性屏蔽膜23的步驟。藉此，獲得目標電子零件裝置100。屏蔽膜23主要是出於電磁波屏蔽的目的而設置。屏蔽膜23可為單層或多層的金屬薄膜，該些可藉由例如濺鍍或蒸鍍之類的方法來形成。可使用與導電圖案21或導電性通孔22相同的導電體前驅物來形成屏蔽膜23。電子零件裝置100包括：密封結構體50，包含被動零件31、被動零件32、IC晶片41、IC晶片42、密封層5、導電性通孔22、及屏蔽膜23；以及再配線層6，與被動零件31、被動零件32及IC晶片41、IC晶片42連接。可使用一片複合基材1上一併形成多個電子零件裝置，並將該些分割。
如圖5、圖6、圖7及圖8所例示，亦可藉由另外準備具有再配線層的再配線結構體並將再配線結構體與密封結構體連接，於電路面上設置再配線層。於該方法的情況下，例如如圖5所示，於載體基材1B上形成再配線結構體60，所述再配線結構體60含有具有相向的兩個主面的再配線層6、以及設置於再配線層6的與載體基材1B為相反側的主面上的多個凸塊63。
載體基材1B包括支撐體11、與設置於支撐體11上的暫時固定材層13。載體基材1B的支撐體11及暫時固定材層13可具有與複合基材1的支撐體11及暫時固定材層13相同的構成。
再配線層6具有配線61、與設置於配線61間的絕緣層62。配線61包含沿與再配線層6的主面平行的方向延伸存在的多層配線層61a、和沿與再配線層6的主面垂直的方向延伸存在的連結部61b。各個配線層61a的厚度並無特別限制，例如可為1 μm～30 μm。再配線層6與圖3的再配線層同樣地，可藉由本領域技術人員已知的通常方法來形成。
例如，凸塊63具有與配線61接觸的柱狀部63a和設置於柱狀部63a上的半球部63b。柱狀部63a可由銅形成，半球部63b可由無鉛焊料（例如包含Sn及Ag的合金）形成。凸塊63的尺寸可於確保與配線61的適當的連接的範圍內調整。例如，凸塊63的寬度可為5 μm～100 μm，凸塊63的高度可為5 μm～50 μm。凸塊63可利用通常的方法形成。
亦可檢查所準備的再配線結構體60。檢查例如包括確認有無由配線61及凸塊63的斷線或短路引起的異常。藉由該檢查，可於將再配線結構體60與密封結構體50連接之前排除再配線結構體60的不良品。其結果，與在密封層內所密封的電子零件上直接形成再配線的情況相比，可降低因再配線的形成中的不良情況而排除正常的電子零件的可能性。
圖6表示使密封結構體50與再配線結構體60在介隔存在有絕緣性接著層70的同時加以連接的步驟的一例。將密封結構體50與再配線結構體60於電路面CS與凸塊63相向的方向上，介隔存在有絕緣性接著層70的同時加以接著。此時，以使連接部（導電圖案21、及凸塊41B、凸塊42B）與多個凸塊63中的一部分連接的方式，將密封結構體50及再配線結構體60對位。藉此，配線61經由凸塊63而連接於連接部（導電圖案21、及凸塊41B、凸塊42B）。為了連接部（導電圖案21、及凸塊41B、凸塊42B）與凸塊63的連接、絕緣性接著層70的硬化、或者該些兩者，亦可一面進行加熱及加壓一面將密封結構體50與再配線結構體60貼合。加熱溫度例如可為250℃～300℃，壓力可為0.5 MPa～1 MPa。藉由將連接部（導電圖案21、及凸塊41B、凸塊42B）與多個凸塊63中的一部分連接，來連接密封結構體50與再配線結構體60。於本說明書中，「連接」的表述有時是指「電性連接」。
絕緣性接著層70可為和為了將半導體晶片等與電路基板接著而通常使用的半導體接著劑相同者。絕緣性接著層70亦可包含與接著層15相同的硬化性接著劑。亦可於將密封結構體50與再配線結構體60連接之前，於密封結構體50的電路面CS上配置絕緣性接著層70。
亦可準備具有支撐膜及設置於支撐膜上的絕緣性接著層的積層膜，將該絕緣性接著層積層於電路面CS上。作為可用於此的積層膜的市售品的例子，可列舉日立化成股份有限公司製造的NCF AK系列。
圖7表示自與密封結構體50連接的再配線結構體60剝離載體基材1B的步驟的一例。載體基材1B的暫時固定材層13例如可藉由加熱、光照射、或機械剝離而自再配線層6剝離。
如圖8所示，於載體基材1B剝離後，可於再配線層6的與密封結構體50為相反側的主面上設置與配線61連接的焊料球7。焊料球7用作二次安裝用的連接端子。視需要進行回流焊。
藉由以上例示的方法來獲得電子零件裝置101。電子零件裝置100主要包括密封結構體50、再配線結構體60、以及介隔存在於密封結構體50與再配線結構體60之間並將該些加以接著的絕緣性接著層70。
電子零件裝置的製造方法並不限定於以上說明的例子，能夠根據需要進行變更。例如，亦可不設置導電性通孔22、或屏蔽膜23。
1:複合基材 1B:載體基材 5:密封層 5A:貫通孔 5S:面 6:再配線層 7:焊料球 11:支撐體 13:暫時固定材層 15:接著層 21:導電圖案 21a:導電體前驅物 22:導電性通孔 23:屏蔽膜 31、32:被動零件 41、42:IC晶片 41A、42A:本體部 41B、42B:凸塊 50:密封結構體 60:再配線結構體 61:配線 61a:配線層 61b:連結部 62:絕緣層 63:凸塊 63a:柱狀部 63b:半球部 70:絕緣性接著層 100、101:電子零件裝置 CS:電路面 H:高度 W:最大寬度
圖1的（a）～圖1的（d）是表示電子零件裝置的製造方法的一實施形態的步驟圖。 圖2的（e）～圖2的（g）是表示電子零件裝置的製造方法的一實施形態的步驟圖。 圖3的（h）～圖3的（j）是表示電子零件裝置的製造方法的一實施形態的步驟圖。 圖4是表示電子零件裝置的製造方法的一實施形態的步驟圖。 圖5是表示電子零件裝置的製造方法的一實施形態的步驟圖。 圖6是表示電子零件裝置的製造方法的一實施形態的步驟圖。 圖7是表示電子零件裝置的製造方法的一實施形態的步驟圖。 圖8是表示電子零件裝置的製造方法的一實施形態的步驟圖。
1:複合基材
5:密封層
11:支撐體
13:暫時固定材層
15:接著層
21:導電圖案
21a:導電體前驅物
31、32:被動零件
41、42:IC晶片
41A、42A:本體部
41B、42B:凸塊

Claims (9)

  1. 一種電子零件裝置的製造方法，依序包括： 準備複合基材的步驟，所述複合基材包括支撐體、暫時固定材層、及硬化性的接著層，並且該些為依序積層； 於所述複合基材的所述接著層上，使與所述接著層接觸的連接部介隔存在於所述接著層與電子零件之間同時配置多個所述電子零件的步驟； 藉由使所述接著層硬化而將所述多個電子零件固定於所述複合基材的步驟； 於所述接著層上形成密封所述電子零件的密封層的步驟； 使所述密封層硬化的步驟； 藉由自所述接著層剝離所述暫時固定材層而獲得具有所述接著層、所述電子零件及所述密封層的密封結構體的步驟；以及 藉由自所述接著層側研磨所述密封結構體而形成所述密封層及所述連接部露出的電路面的步驟， 所述多個電子零件包含積體電路晶片、及晶片型被動零件， 所述積體電路晶片具有本體部、及設置於所述本體部的其中一主面側的凸塊， 所述積體電路晶片是以作為所述連接部的所述凸塊與所述接著層接觸的方向配置於所述接著層上， 所述被動零件藉由如下方法而配置於所述接著層上，所述方法依序包括：將圖案形成用的導電體前驅物作為所述連接部而配置於所述接著層上、將所述被動零件載置於所述導電體前驅物上、藉由對所述導電體前驅物進行加熱而將導電圖案形成為所述連接部。
  2. 如請求項1所述的電子零件裝置的製造方法，其中所述方法進而包括： 於所述密封層內形成貫通孔的步驟，所述貫通孔自所述密封層的與所述接著層為相反側的面朝向所述接著層延伸； 於所述貫通孔中填充導電性通孔用的導電體前驅物的步驟；以及 藉由對所述貫通孔內的所述導電體前驅物進行加熱而形成導電性通孔的步驟， 所述密封結構體進而具有所述導電性通孔，以所述導電性通孔與所述密封層及所述連接部一同於所述電路面露出的方式，自所述接著層側對所述密封結構體進行研磨。
  3. 如請求項2所述的電子零件裝置的製造方法，其中所述貫通孔是在使所述密封層硬化的步驟之前，藉由對所述密封層的與所述接著層相反側的面將模具按入的壓印法而形成。
  4. 如請求項2或請求項3所述的電子零件裝置的製造方法，其中導電性通孔用的所述導電體前驅物含有多個金屬粒子及分散有所述多個金屬粒子的有機黏合劑， 於對所述導電體前驅物進行加熱時，所述多個金屬粒子藉由暫態液相燒結而形成金屬燒結體，藉此形成包含所述金屬燒結體的所述導電性通孔。
  5. 如請求項2至請求項4中任一項所述的電子零件裝置的製造方法，其中所述方法進而包括形成導電性屏蔽膜的步驟，所述導電性屏蔽膜覆蓋所述密封層的與所述連接部為相反側的面且與所述導電性通孔連接。
  6. 如請求項1至請求項5中任一項所述的電子零件裝置的製造方法，其中所述方法進而包括於所述電路面上設置具有連接於所述連接部的配線的再配線層的步驟。
  7. 如請求項6所述的電子零件裝置的製造方法，其中藉由如下方法將所述再配線層設置於所述電路面上，所述方法包括： 準備再配線結構體，所述再配線結構體包括具有相向的兩個主面的所述再配線層、以及設置於所述再配線層的其中一主面上的多個凸塊，所述配線連接於所述多個凸塊；以及 將所述密封結構體與所述再配線結構體以所述電路面與所述多個凸塊相向的方向、且以介隔存在絕緣性接著層的同時使所述連接部與所述多個凸塊中的至少一部分連接的方式接著，藉此將所述密封結構體與所述再配線結構體以所述配線經由所述凸塊而連接於所述連接部的方式連接。
  8. 如請求項7所述的電子零件裝置的製造方法，其中所述再配線結構體設置於包括支撐體及設置於所述支撐體上的暫時固定材層的載體基材的所述暫時固定材層上， 所述方法進而包括於所述電路面上設置所述再配線層的步驟之後，自所述再配線結構體剝離所述載體基材的步驟。
  9. 一種電子零件裝置製造用積層膜，具有暫時固定材層、及設置於所述暫時固定材層上的硬化性的接著層，且於如請求項1至請求項8中任一項所述的電子零件裝置的製造方法中用於準備所述複合基材。
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