TW202100625A - 液晶聚合物薄膜及液晶聚合物與聚醯亞胺的複合膜及其製法 - Google Patents
液晶聚合物薄膜及液晶聚合物與聚醯亞胺的複合膜及其製法 Download PDFInfo
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- TW202100625A TW202100625A TW108122739A TW108122739A TW202100625A TW 202100625 A TW202100625 A TW 202100625A TW 108122739 A TW108122739 A TW 108122739A TW 108122739 A TW108122739 A TW 108122739A TW 202100625 A TW202100625 A TW 202100625A
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- liquid crystal
- crystal polymer
- film
- polyimide
- composite film
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Abstract
本發明提供一種液晶聚合物薄膜及液晶聚合物與聚醯亞胺的複合膜及其製法,液晶聚合物薄膜包括63wt%至74wt%的對羥基苯甲酸、21wt%至26wt%的6-羥基-2-萘甲酸以及5wt%至11wt%的對香豆酸。其特徵是使用單層或單層以上液晶聚合物薄膜及聚醯亞胺膜經雙鋼帶熱壓機熱壓成複合膜,可增加液晶聚合物薄膜平坦性,表面粗糙度Sa為0.5μm至4μm。 複合膜生產過程,提供一種捲繞成滾筒狀時,貼合銅箔,成為加工性良好高頻基板,將聚醯亞胺膜剝離,熱壓合成形四層、六層、八層或八層以上高頻基板及其製法。
Description
本發明涉及一種液晶聚合物薄膜及液晶聚合物與聚醯亞胺的複合膜及其製法,尤指一種用於超高頻基板用的液晶聚合物薄膜及液晶聚合物與聚醯亞胺的複合膜及其製法,其可應用於120 GHz超高頻航太通訊應用領域。
隨著光電、航太、國防及行動通訊於高頻傳輸(60GHz-120GHz)等領域快速發展,針對高性能工程塑膠需求大幅提升,液晶聚合物因具備低吸濕、耐化性佳、高阻氣性、及低介電常數/介電損失(Dk/Df)等特性,成為主要開發材料之一,近年來,航太超高頻傳輸領域,開始蓬勃發展,為提升訊號傳送速度,需要提升基板的傳輸速度,及高頻的低傳輸損失。介電常數越低,信號的傳輸速度越接近高速,介電常數越低加上波形的變形越小是目前開發低介電常數的高頻基板的目標。
以往這樣的用途使用陶瓷材料,但是有加工困難、價格昂貴的問題、轉而向介電性質優良的氟樹脂(例如:PTFE)作為電絕緣層的基板,或耐熱性優良的聚醯亞胺作為電絕緣層,但聚四氟乙烯(PTFE)基板而言,氟樹脂本身具有優良的高頻特性、耐濕性,但為了提高尺寸安定性使用玻纖布等影響,基板整體的高頻特性、耐濕性降低,聚醯亞胺基板之高頻特性較PTFE更大幅度落後,且吸濕性高影響高頻基板正常訊號傳輸。
不只是導體損失,介電損失也與高頻信號的傳輸損失有關。於是,為了抑制高頻信號的傳輸損失,提升資訊處理速度與訊號傳輸速度,要求一種介電特性優異的絕緣基板材料。
使用介電損失比聚醯亞胺薄膜小的液晶聚合物薄膜作為絕緣基板,並利用熱壓合將液晶聚合物薄膜與導體層貼合而形成電路基板,市場正成形中。
先前專利TW201702067為了提高導體層之定準效應(Anchoring Effect,或稱Focalism),而增大導體層之表面粗糙度,減少熱塑性液晶聚合物薄膜等絕緣層積層,而降低形成電路基板之高頻特性。
先前專利CN103917582提供一種能應用於高溫及高濕條件下,也能顯示優良的介電特性。
先前專利CN1488489A提供一種吹塑薄膜的生產設備,包括圓形模頭、冷卻環、風環等設備,主要目的為有效控制抑制成形薄膜質量方面的變化,抑制融化態薄膜的擺動。
以吹袋方式生產塑膠膜在工業上已超過30年,包括低密度聚乙烯(LDPE)、高度聚乙烯(HDPE)、線型低密度聚乙烯(LLDPE)、聚丙烯(PP)、聚氯乙烯(PVC)、熱塑性液晶聚酯(熱塑性LCP)等,皆可使用吹袋機生產,是廣為應用的製造方法。
本發明所要解決的技術問題在於,針對現有技術的不足提供一種液晶聚合物薄膜及液晶聚合物與聚醯亞胺的複合膜及其製法。
為了解決上述的技術問題,本發明所採用的其中一技術方案是,提供一種液晶聚合物薄膜,其包括:63重量百分比(wt%)至74wt%的對羥基苯甲酸(p
-hydroxybenzoic acid)、21wt%至26wt%的6-羥基-2-萘甲酸(2-hydroxy- 6-naphthalene carboxylic acid)以及5wt%至11wt%的對香豆酸(p
-hydroxycinnamic acid)。
為了解決上述的技術問題,本發明所採用的另外一技術方案是,提供一種液晶聚合物與聚醯亞胺的複合膜,其包括:一液晶聚合物薄膜和一聚醯亞胺膜,聚醯亞胺膜設置於液晶聚合物薄膜上,液晶聚合物薄膜包括63wt%至74wt%的對羥基苯甲酸、21wt%至26wt%的6-羥基-2-萘甲酸以及5wt%至11wt%的對香豆酸。
為了解決上述的技術問題,本發明所採用的另外再一技術方案是,提供一種液晶聚合物與聚醯亞胺的複合膜的製法,其包括以下步驟:製備一液晶聚合物,所述液晶聚合物包括63wt%至74wt%的對羥基苯甲酸、21wt%至26wt%的6-羥基-2-萘甲酸以及5wt%至11wt%的對香豆酸。將所述液晶聚合物以熱壓合方式設置於一聚醯亞胺膜上,形成一液晶聚合物與聚醯亞胺的複合膜。
本發明特別適用於生產航太工業用天線系統,其中天線以銅箔/液晶聚合物/液晶聚合物/銅箔四層,或四層以上結構製造而成(如圖2、圖3所示),應用於航太工業高頻傳輸系統用天線,基本上存在高溫及高濕介電損失無法維持固定,受天候影響很大,本專利主要是應用在高頻傳輸系統如,60GHz至120GHz及以上範圍。選用液晶聚合物樹脂合成,配方包括對羥基苯甲酸、6-羥基-2-萘甲酸和對香豆酸,以特定比例經合成、造粒、吹袋等過程製造,使用單軸押出機,在285°C至300°C下對由對羥基苯甲酸、6-羥基-2-萘甲酸、對香豆酸構成的液晶聚合物樹脂進行加熱混練後,利用直徑180mm之吹袋模頭進行擠製,從而得到厚度50μm之液晶聚合物薄膜。該液晶聚合物薄膜之溶點(Tm)為279°C,吹袋製膜過程中當液晶聚合物由押出機模頭擠出時,該聚合物的分子會沿擠出方向取向,造成在薄膜縱向(以下稱為MD,機械方向),和MD垂直方向(以下稱為TD,橫向),間產生差異,也就是說縱向及橫向在物性上可以是不同的,利用縱向延伸及橫向延伸倍率之不同,可控制及調整縱向及橫向物性差異性。
吹袋製膜過程中由於產生皺摺,會影響高頻傳輸天線之介電損失,欲解決皺褶採用夾膜收卷兩側裝設夾具系統,於薄膜尚未冷卻時,橫向有夾具將膜展開,減少皺褶產生,對液晶聚合物薄膜生產具有良率提升效果,並進一步提升液晶聚合物薄膜平整性。
[UV光照射,增加交聯密度]
在照射紫外線條件下,能夠使C=C鍵和C=C鍵進行光化學反應,增加液晶聚合物交聯性,如照射波長185nm的紫外線、波長254nm的紫外線,也可以組合不同波長的紫外線,波長185nm和波長254nm的紫外線同時照射。
[熱壓合]
提供一種適用於航太行業的液晶聚合物與聚醯亞胺的複合膜製法,所述液晶聚合物與聚醯亞胺的複合膜以雙鋼帶熱壓合機(上層及下層皆有高溫鋼板,250℃、50Kg/cm2
),具有高溫熱壓效果,液晶聚合物與聚醯亞胺的複合膜之間有較好的附著力,具有可控的剝離力,剝離後液晶聚合物膜不殘留於聚醯亞胺膜,聚醯亞胺膜不殘留於液晶聚合物膜,生產過程中易熱壓成多層板,其耐熱性、耐溶劑、耐濕性及其耐候性比目前市場上的高頻材料性能有一個明顯的提升,使其可以有更廣泛的適用性。
雙鋼帶壓合機,採鏡面鋼材處理,上層及下層皆使用拋光處理鋼帶,同時具有高溫及高壓雙效熱壓合機,可有效壓合液晶聚合物薄膜及聚醯亞胺膜,機台最高溫為400°C,最高壓力為200Kg/cm2
。如圖6所示。
為了克服現有技術存在的缺點和不足,本發明的目的在於提供高平坦性液晶聚合物與聚醯亞胺的複合膜,提供易於加工性能,使高頻基板在製造過程中,易設計不同線路及加工。
本發明的目的通過下述技術實現;一種超高頻60GHz至120GHz用液晶聚合物與聚醯亞胺的複合膜,可依不同組合製造四層、六層、八層或八層以上之高頻基板。
具體來說,銅箔厚度為12μm至70μm。液晶聚合物薄膜厚度25μm至100μm。聚醯亞胺膜厚度50μm至125μm。
四層電路板(如圖2所示)為銅箔層/液晶聚合物層/液晶聚合物層/銅箔層,厚度25μm至250μm,較佳為100μm至150μm。六層電路板(如圖3所示)為銅箔層/液晶聚合物層/銅箔層/液晶聚合物層/液晶聚合物層/銅箔層,厚度75μm至300μm,較佳為150μm至200μm。八層電路板為銅箔層/液晶聚合物層/銅箔層/液晶聚合物層/銅箔層/液晶聚合物層/液晶聚合物層/銅箔層,厚度100μm至400μm,較佳為200μm至300μm。
如圖1所示,銅箔基礎板包括銅箔10、液晶聚合物薄膜20和聚醯亞胺膜30,此銅箔基礎板可進一步熱壓製成四層、六層、八層或八層以上之高頻電路板。
銅箔10可以是南亞塑膠工業股份有限公司自製型號為FR-4、FR-5的銅箔,或是型號為TLC-V、TLC-H的銅箔為主要對象,厚度12μm至70μm。
液晶聚合物薄膜採用吹袋法製作,於夾膜收袋兩側裝設夾袋設計,於左右兩側固定液晶聚合物薄膜,減少皺褶產生,並於緩慢降溫過程增加液晶聚合物薄膜的結晶性,吹袋機製膜及夾膜設備的示意圖如圖4、5所示。
藉由雙鋼帶熱壓合機,於連續捲裝的液晶聚合物及聚醯亞胺膜熱壓合,再經烘箱加熱,捲繞成滾筒狀的複合薄膜及其製法,進行此樣的操作,可達成前述目的,如圖6所示。
本發明為達到超高頻60GHz至120GHz規格,採用高度平坦雙鋼帶熱壓合機,藉由高溫250°C熱壓合,增加液晶聚合物與聚醯亞胺膜平坦性,達到低介電常數(Dk)之目的,Dk一般介於1至5,較佳為1.2至3.7,最佳為1.8至3.6,對超高頻傳輸有最佳表現。
本發明為達到超高頻60GHz-120GHz規格,採用高度平坦雙鋼帶熱壓合機,藉由高溫250°C熱壓合,增加液晶聚合物與聚醯亞胺膜平坦性,達到低介電損失(Df)之目的,Df一般介於0.0001至0.12,較佳為0.0005至0.032,最佳為0.001至0.003,對超高頻傳輸有最佳表現。
由於在下游加工高頻基板,加工性複雜,為增加效率及降低成本,將液晶聚合物及聚醯亞胺膜先製造成複合膜,增加加工便利性。
本發明的其中一有益效果在於,本發明所提供的液晶聚合物薄膜及液晶聚合物與聚醯亞胺的複合膜及其製法,其能通過“調控液晶聚合物薄膜的成分及比例”的技術方案,不僅可維持介電常數大於或等於3.0,且可使介電損耗小於或等於0.003,故可應用於高頻基板,且具有良好的加工性。
為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。
以下是通過特定的具體實施例來說明本發明所公開有關“液晶聚合物薄膜及液晶聚合物與聚醯亞胺的複合膜及其製法”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。
應當可以理解的是,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。
本發明為一種液晶聚合物薄膜,其特徵為液晶聚合物組成包含:(本文以下均為wt%) A.對羥基苯甲酸(p
-hydroxybenzoic acid) 63wt%至74wt%; B.6-羥基-2-萘甲酸(6-hydroxy-2-naphthoic acid) 21wt%至26wt%; C.對香豆酸(p
-hydroxycinnamic acid) 5wt%至11wt%。
藉由在吹袋機製膜,於連續捲裝的液晶聚合物薄膜,夾膜收袋兩側裝設夾袋設計,於左右兩側固定液晶聚合物薄膜,液晶聚合物薄膜不會因溫度降低產生皺摺形變,也不會變硬變脆,影響質感。再UV光照射,經雙鋼帶熱壓機,將液晶聚合物及聚醯亞胺膜熱壓成複合膜,經烘箱加熱後,捲繞成滾筒狀的複合膜及其製法,進行此樣的操作,可達成前述目的,液晶聚合物及聚醯亞胺複合膜性質穩定,不會隨著時間變化,這種為液晶聚合物及聚醯亞胺複合膜製法可增加平坦性,減少皺褶產生。
本發明液晶聚合物樹脂可選自含苯環、萘環、耐熱性較佳單體,包含各種苯環、萘環結構,主要反應官能基,含羥基(OH)、羧基(COOH)等官能基,有乙烯基接枝、末端己烯基接枝、末端及中間端乙烯基接枝,其中以中間端含有乙烯基對香豆酸較佳;添加量為5至11%,其選用特徵後述。
[UV光照射,增加液晶聚合物交聯密度]
於吹袋機製膜後,在照射紫外線條件下,能夠使C=C鍵和C=C鍵進行光化學反應,增加聚合物交聯性,如照射波長185nm的紫外線、波長254nm的紫外線,也可以組合不同波長的紫外線,波長185nm和波長254nm的紫外線同時照射。
本發明的特徵是:一種液晶聚合物薄膜與聚醯亞胺薄膜貼合之複合膜,而不是混合型液晶聚合物及聚醯亞胺混合膜。液晶聚合物薄膜於上述吹袋製膜後,厚度若大於150μm,有表面粗糙度較高的缺點,無法完全填平液晶聚合物薄膜表面,若小於15μm,無法提供良好低介電常數Dk,低介電損失Df等電性。
使用雙鋼帶熱壓合機,高溫熱壓合液晶聚合物及聚醯亞胺膜。可藉由在150°C至360°C熱壓合,但在200°C至320°C的範圍的溫度更佳,加熱處理5秒以上,較佳地,處理8秒以上的時間,藉此,形成複合膜。複合膜厚度為20μm至300μm,更佳者為30μm至200μm的範圍。
1.厚度測試
將液晶聚合物薄膜中央部分裁切成50mm寬幅大小,縱向(MD)測試30cm長,橫向(TD)測試30cm長,使用連續式厚度計(Fuji公司,型號:S-2268)測試薄膜厚度,平均縱向及橫向厚度。
2.厚度均勻性
將液晶聚合物薄膜中央部分裁切成50mm寬幅大小,縱向(MD)測試30cm長,橫向(TD)測試30cm長,使用連續式厚度計(Fuji公司,型號:S-2268)測試薄膜厚度,平均縱向及橫向厚度,最大值與最小值之差值為厚度均勻性分析值。
3.平均粗糙度Sa
平均粗糙度Sa是光學顯微鏡分析,使用非接觸式表面粗糙度計(Laser Micro scope VK-X1000)測定,測定條件如下: (a) 倍率:50 ⅹ 24; (b) 測定長度:282μm; (c) 測定寬度:247μm。
4.液晶聚合物薄膜皺摺
液晶聚合物薄膜樣品準備:裁剪液晶聚合物薄膜為A4大小,在液晶聚合物薄膜目視外觀皺摺,用下述基準評價。 ○:液晶聚合物薄膜平整性良好,外觀皺摺0~1條。 △:液晶聚合物薄膜平整性稍差,外觀皺摺2~3條。 ╳:液晶聚合物薄膜平整性差,外觀皺摺3條以上。
5.介電常數之量測
量測液晶聚合物薄膜的介電常數。具體而言,使用向量網路分析儀(Anritsu公司製,型式:ME7838E),以101GHz進行量測。
6.介電損失之量測
量測液晶聚合物薄膜的介電損失。具體而言,使用向量網路分析儀(Anritsu公司製,型式:ME7838E),以105GHz進行量測。
本發明藉以下實施例及比較例進一步說明,但本發明的範疇並不限於此等例子。
[實施例1]
如下組成所述,液晶聚合物樹脂組成包括,A.對羥基苯甲酸(p-hydroxybenzoic acid);B.6-羥基-2-萘甲酸(6-hydroxy-2-naphthoic acid);C.對香豆酸(p-hydroxycinnamic acid);其中A/B/C的質量比為68/24/8。
請參閱圖7所示,液晶聚合物的製備是藉由在吹袋機製膜,夾膜收袋兩側裝設夾袋設計,於左右兩側固定液晶聚合物薄膜,液晶聚合物薄膜不會因溫度降低產生皺摺形變,表面平坦無皺褶。
液晶聚合物薄膜厚度50μm先經UV光照射,增加交聯性,再與聚醯亞胺薄膜厚度50μm,所述液晶聚合物與聚醯亞胺複合層以雙鋼帶熱壓合機(上層及下層皆有高溫鋼板,250°C、50Kg/cm2
),具有高溫熱壓效果,液晶聚合物與聚醯亞胺的複合膜之間有較好的附著力,其各種物理試驗,如表1所示。
[實施例2]
實施例2以類似於實施例1的方式製備,其差異在於,實施例2的液晶聚合物樹脂中A/B/C的質量比為70/24/6,藉由在吹袋機製膜。
液晶聚合物薄膜厚度50μm先經UV光照射,增加交聯性,再與聚醯亞胺薄膜厚度75μm,所述液晶聚合物與聚醯亞胺複合層以雙鋼帶熱壓合機(上層及下層皆有高溫鋼板,230°C、100Kg/cm2
),高溫熱壓液晶聚合物與聚醯亞胺的複合膜,其各種物理試驗,如表1所示。
[實施例3]
實施例3以類似於實施例1的方式製備,其差異在於,實施例3的液晶聚合物樹脂中A/B/C的質量比為73/25/2,藉由在吹袋機製膜。
液晶聚合物薄膜厚度25μm先經UV光照射,增加交聯性,再與聚醯亞胺薄膜厚度50μm,所述液晶聚合物與聚醯亞胺複合層以雙鋼帶熱壓合機(上層及下層皆有高溫鋼板,230°C、80Kg/cm2
),具有高溫熱壓效果,液晶聚合物與聚醯亞胺的複合膜之間有較好的附著力,其各種物理試驗,如表1所示。
[比較例1]
比較例1以類似於實施例1的方式製備,其差異在於,比較例1的液晶聚合物樹脂中A/B/C的質量比為60/20/20,藉由在吹袋機製膜。
液晶聚合物薄膜厚度75μm先經UV光照射,增加交聯性,再與聚醯亞胺薄膜厚度100μm,所述液晶聚合物與聚醯亞胺複合層以雙鋼帶熱壓合機(上層及下層皆有高溫鋼板,260°C、100Kg/cm2
),具有高溫熱壓效果,液晶聚合物與聚醯亞胺的複合膜之間有較好的附著力,其各種物理試驗,如表1所示。
[比較例2]
比較例2以類似於實施例1的方式製備,其差異在於,比較例2的液晶聚合物樹脂中A/B/C的質量比為50/40/10,藉由在吹袋機製膜。
液晶聚合物薄膜厚度100μm先經UV光照射,增加交聯性,再與聚醯亞胺薄膜厚度125μm,所述液晶聚合物與聚醯亞胺複合層以雙鋼帶熱壓合機(上層及下層皆有高溫鋼板,270°C、100Kg/cm2
),具有高溫熱壓效果,液晶聚合物與聚醯亞胺的複合膜之間有較好的附著力,其各種物理試驗,如表1所示。
表1:
實施例 | 比較例 | ||||||
1 | 2 | 3 | 1 | 2 | |||
液晶聚合物薄膜 | 單體A/B/C質量比 | 68/24/8 | 70/24/6 | 73/25/2 | 60/20/20 | 50/40/10 | |
厚度(μm) | 50 | 50 | 25 | 75 | 100 | ||
厚度均勻性(μm) | 3.5 | 4 | 3.8 | 6 | 8 | ||
表面粗糙度(μm) | 2.4 | 2.8 | 2.6 | 3.1 | 4.3 | ||
皺褶 | 〇 | △ | △ | ╳ | ╳ | ||
聚醯亞胺薄膜厚度(μm) | 50 | 75 | 50 | 100 | 125 | ||
熱壓溫度(°C) | 250 | 230 | 230 | 260 | 270 | ||
熱壓壓力(Kg/cm2 ) | 50 | 100 | 80 | 100 | 100 | ||
熱壓時間(sec) | 8 | 15 | 6 | 20 | 25 | ||
101 GHz Dk | 3.4 | 3.5 | 3.6 | 3.8 | 3.9 | ||
101 GHz Df | 0.0021 | 0.0025 | 0.003 | 0.0032 | 0.0039 | ||
[結果與討論]
使用A.對羥基苯甲酸;B.6-羥基-2-萘甲酸;C.對香豆酸;其中A/B/C比例以68/24/8最佳,C.對香豆酸以添加量8wt%最佳,吹袋機製膜後,再經UV光照射,使液晶聚合物薄膜內C=C雙鍵與C=C雙鍵,進行光化學反應,增加薄膜交聯性,增加薄膜強韌性,若添加量大於20wt%,製膜後再經UV光照射,薄膜變得易脆及硬,小於5wt%,薄膜較軟。
以雙鋼帶熱壓合機(上層及下層皆有高溫鋼板),貼合液晶聚合物薄膜與聚醯亞胺薄膜,熱壓貼合成複合膜,若熱壓溫度高於熔點279°C,則液晶聚合物薄膜與聚醯亞胺薄膜無法剝離,若液晶聚合物薄膜與聚醯亞胺薄膜熱壓溫度低於100°C,則易剝離分開。
[實施例的有益效果]
本發明的其中一有益效果在於,本發明所提供的液晶聚合物薄膜及液晶聚合物與聚醯亞胺的複合膜及其製法,其能通過“調控液晶聚合物薄膜的成分及比例”的技術方案,不僅可維持介電常數大於或等於3.0,且可使介電損耗小於或等於0.003,故可應用於高頻基板,且具有良好的加工性。
以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。
10:銅箔
20:液晶聚合物薄膜
30:聚醯亞胺膜
圖1為本發明銅箔基礎板的剖面示意圖。
圖2為本發明四層電路板的剖面示意圖。
圖3為本發明六層電路板的剖面示意圖。
圖4為吹袋機製膜及夾膜設備側面示意圖。
圖5為圖4中V部分的放大示意圖。
圖6為雙鋼帶壓模機示意圖。
圖7為本發明液晶聚合物與聚醯亞胺的複合膜製法的流程圖。
10:銅箔
20:液晶聚合物薄膜
30:聚醯亞胺膜
Claims (10)
- 一種液晶聚合物薄膜,其是用於一超高頻基板,所述液晶聚合物薄膜包括: 63重量百分比至74重量百分比的對羥基苯甲酸; 21重量百分比至26重量百分比的6-羥基-2-萘甲酸;以及 5重量百分比至11重量百分比的對香豆酸。
- 如申請專利範圍第1項所述的液晶聚合物薄膜,其中,所述液晶聚合物薄膜的表面粗糙度Sa為0.1微米至10微米。
- 一種液晶聚合物與聚醯亞胺的複合膜,其包括: 一液晶聚合物薄膜,其包括63重量百分比至74重量百分比的對羥基苯甲酸、21重量百分比至26重量百分比的6-羥基-2-萘甲酸以及5重量百分比至11重量百分比的對香豆酸;以及 一聚醯亞胺膜,所述聚醯亞胺膜以熱壓方式設置於所述液晶聚合物薄膜上,其中,所述聚醯亞胺膜可自所述液晶聚合物薄膜上剝離。
- 如申請專利範圍第3項所述的液晶聚合物與聚醯亞胺的複合膜,其中,所述液晶聚合物與聚醯亞胺的複合膜的厚度為20微米至300微米。
- 如申請專利範圍第3項所述的液晶聚合物與聚醯亞胺的複合膜,其中,所述液晶聚合物與聚醯亞胺的複合膜的介電常數為1至5。
- 如申請專利範圍第3項所述的液晶聚合物與聚醯亞胺的複合膜,其中,所述液晶聚合物與聚醯亞胺的複合膜的介電損耗為0.0001至0.12。
- 一種液晶聚合物與聚醯亞胺的複合膜的製法,其包括以下步驟: 製備一液晶聚合物,所述液晶聚合物包括63重量百分比至74重量百分比的對羥基苯甲酸、21重量百分比至26重量百分比的6-羥基-2-萘甲酸以及5重量百分比至11重量百分比的對香豆酸;以及 將所述液晶聚合物以熱壓合方式設置於一聚醯亞胺膜上,形成一液晶聚合物與聚醯亞胺的複合膜。
- 如申請專利範圍第7項所述的液晶聚合物與聚醯亞胺的複合膜的製法,其中,所述熱壓合的溫度為150°C至360°C。
- 如申請專利範圍第7項所述的液晶聚合物與聚醯亞胺的複合膜的製法,其中,所述熱壓合的壓力為10Kg/cm2 至3000Kg/cm2 。
- 如申請專利範圍第7項所述的液晶聚合物與聚醯亞胺的複合膜的製法,其中,所述熱壓合的時間為5至60秒。
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JP2011116834A (ja) * | 2009-12-02 | 2011-06-16 | Toray Ind Inc | 液晶性ポリエステル、その樹脂組成物およびそれらからなる成形品 |
TWI508852B (zh) * | 2010-01-29 | 2015-11-21 | Nippon Steel & Sumikin Chem Co | 單面覆金屬積層體的製造方法 |
US10813213B2 (en) * | 2017-02-16 | 2020-10-20 | Azotek Co., Ltd. | High-frequency composite substrate and insulating structure thereof |
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2019
- 2019-06-28 TW TW108122739A patent/TWI687465B/zh not_active IP Right Cessation
- 2019-07-09 CN CN201910615534.8A patent/CN112142959A/zh active Pending
- 2019-10-24 US US16/662,272 patent/US20200407639A1/en not_active Abandoned
- 2019-12-23 JP JP2019231853A patent/JP2021008593A/ja active Pending
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US20200407639A1 (en) | 2020-12-31 |
JP2021008593A (ja) | 2021-01-28 |
CN112142959A (zh) | 2020-12-29 |
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