TW202033810A - SiOC膜之氧化還原 - Google Patents
SiOC膜之氧化還原 Download PDFInfo
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- TW202033810A TW202033810A TW108146878A TW108146878A TW202033810A TW 202033810 A TW202033810 A TW 202033810A TW 108146878 A TW108146878 A TW 108146878A TW 108146878 A TW108146878 A TW 108146878A TW 202033810 A TW202033810 A TW 202033810A
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- substrate processing
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- silicon
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- 230000033116 oxidation-reduction process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 239000002243 precursor Substances 0.000 claims abstract description 107
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 77
- 239000001301 oxygen Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 59
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 51
- 230000009969 flowable effect Effects 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 26
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 10
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 229910018557 Si O Inorganic materials 0.000 claims description 6
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims description 5
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 5
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- BPMGYFSWCJZSBA-UHFFFAOYSA-N C[SiH](C)O[SiH3] Chemical compound C[SiH](C)O[SiH3] BPMGYFSWCJZSBA-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 229910052714 tellurium Inorganic materials 0.000 claims 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229920000642 polymer Polymers 0.000 description 22
- 239000010410 layer Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 229910052734 helium Inorganic materials 0.000 description 8
- 150000001282 organosilanes Chemical class 0.000 description 8
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical group CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- -1 oxygen ions Chemical class 0.000 description 7
- 238000004132 cross linking Methods 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910000618 GeSbTe Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000007833 carbon precursor Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012686 silicon precursor Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- SZKKRCSOSQAJDE-UHFFFAOYSA-N Schradan Chemical group CN(C)P(=O)(N(C)C)OP(=O)(N(C)C)N(C)C SZKKRCSOSQAJDE-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- OBOXTJCIIVUZEN-UHFFFAOYSA-N [C].[O] Chemical class [C].[O] OBOXTJCIIVUZEN-UHFFFAOYSA-N 0.000 description 1
- ADKPKEZZYOUGBZ-UHFFFAOYSA-N [C].[O].[Si] Chemical compound [C].[O].[Si] ADKPKEZZYOUGBZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- C23C16/04—Coating on selected surface areas, e.g. using masks
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
在此描述的實施例大致上關於在溝槽上面形成可流動低k介電層的多種方法,該溝槽形成於圖案化基板的表面上。該等方法包括:將含矽與碳前驅物傳遞至基板處理腔室的基板處理區域中達第一段時間及第二段時間;使含氧前驅物流進電漿源的遠端電漿區域中,同時點燃遠端電漿以形成自由基氧前驅物;在經過該第一段時間之後且於該第二段時間期間,使該自由基氧前驅物以第二流速流進該基板處理區域;及在經過該第二段時間之後,將該含矽與碳介電前驅物暴露至電磁輻射達第三段時間。
Description
本案揭示內容的實施例大致上關於可流動的隙縫填充膜及其製造製程,更詳細而言,關於形成基於碳氧化矽(SiOC)的可流動膜及減少其中的氧化。
在包括淺溝槽隔離(STI)、金屬間介電(IMD)層、層間介電(ILD)層、金屬前介電(PMD)層、鈍化層和類似物的微型化半導體元件的製造中,必須以絕緣材料填充高深寬比的隙縫。隨著電晶體的特徵尺寸以及它們之間的空間已降至20nm或更小,且熱預算減少,此種微小且高深寬比的特徵的無空隙填充變得越來越有挑戰性。在已開發用於填充隙縫和溝槽的技術之其中一者中,將液相的介電前驅物傳遞到隙縫和溝槽中,隨後硬化為固相的介電膜(稱為可流動膜或隙縫填充膜)),在習知上該硬化是透過蒸汽退火、熱壓和高溫燒結達成。在許多例子中,在介電膜形成製程中所用的介電前驅物中的化學結構包括可移除的化學基團,從而在硬化後的介電膜中留下孔隙或引起介電膜的皺酸。再者,高溫下的習知硬化製程無可避免地增加了介電膜內的氧化。因此,需要仔細選擇化學處理方法,以形成具有低模數和黏度的柔軟的可流動膜,以確保隙縫和溝槽的無空隙填充以及減少的氧化,以用於諸如相變記憶體和積體電路的產線後端(BEOL)部分的元件中的應用。
再者,需要可流動膜有改善的機械性質(諸如改善的相對於熱氧化物的濕蝕刻速率WERR(>2:1))及與熱氧化物相等或比熱氧化物少的介電常數及低內應力。
在此描述的實施例大致上關於基板處理設備與基板之表面上形成介電層的方法。本案揭示內容的實施例可進一步提供一種在溝槽上面形成低k介電可流動膜的多種方法,該溝槽形成於圖案化基板的表面上。該方法包括:將含矽與碳(silicon and carbon containing)前驅物傳遞至基板處理腔室的基板處理區域中達第一段時間及第二段時間;使含氧前驅物流進電漿源的遠端電漿區域中,同時點燃遠端電漿以形成自由基氧前驅物;在經過該第一段時間之後且於該第二段時間期間,使該自由基氧前驅物以第二流速流進該基板處理區域;及在經過該第二段時間之後,將該含矽與碳介電前驅物暴露至電磁輻射達第三段時間。
本案揭示內容的實施例可以進一步提供一種在溝槽上面形成低k可流動介電膜的方法,該溝槽形成於圖案化基板的表面上。該方法包括:以第一流速將含矽與碳前驅物傳遞至第一基板處理腔室的基板處理區域中達第一段時間與第二段時間;使含氧前驅物流入電漿源的遠端電漿區域,同時點燃遠端電漿以形成自由基氧前驅物;在經過第一段時間之後並且在第二段時間期間,以第二流速使該自由基氧前驅物流進該基板處理區域中;以及在經過第二段時間之後,將該含矽與碳前驅物暴露於電磁輻射達第三段時間,同時該圖案化基板維持在40°C至500°C之間的溫度,其中該電磁輻射是以第一波長和第一功率提供。
本文描述用於在圖案化基板上形成低k介電可流動膜的方法。該低k介電可流動膜可為含有矽-碳-氧(Si-C-O)鍵的基於碳氧化矽(SiOC)的可流動膜。所形成的膜中的至少該矽和碳的成分來自含矽與碳前驅物,該前驅物也可含有一定量的氧,同時,形成低k介電可流動膜所需的反應性物種是由含氧前驅物所提供,該含氧前驅物是在遠端電漿區域中活化。
大致上,根據本案揭示內容的一些實施例,該等方法可包括將有機矽烷前驅物(也稱為介電前驅物,或含矽與碳前驅物)傳遞到圖案化基板上,該有機矽烷前驅物包括含矽與碳的聚合物(該聚合物可進一步含有氧),並且使介電前驅物內的聚合物交聯,而在圖案化基板上形成基於SiOC的可流動膜。該方法可包括在低基板溫度下固化所形成的膜以增加Si-O-Si鍵的濃度,同時降低併入所形成的膜內的氧的濃度且維持所形成的膜的期望性質。控制用於固化處理的各種條件,以減少併入到圖案化表面上形成的膜內的氧。
本文所述的製程能夠用於防止或最小化圖案化基板上或內形成的含金屬互連件的氧化量及/或記憶體元件的多個部分的氧化量,上述氧化是由於在以習知方式形成的低k介電可流動膜內常見的非期望量的氧所造成。在一或多個後續處理步驟期間,以習知方式形成的低k介電可流動膜內非期望的大量的氧將傾向於遷移至此些結構的多個部分隨後使該等部分氧化。含金屬的互連件(可含有鈦(Ti)、氮化鈦(TiN)、鉭(Ta)、氮化鉭(TaN)、鎢(W)、鈷(Co)、銅(Cu)和鋁(Al))的氧化能夠增加在一或多個形成的互連金屬層之間及之內所產生的線電阻和接觸電阻。諸如相變記憶體元件(包括含OTS(雙向閾值開關)材料之元件(例如BCTe、GeSiAsTe、GeAsSe、SeAsGeSi)及/或含GST(GeSbTe,鍺銻碲)元件)之類的記憶體元件的各部分的非期望氧化在形成時能夠對所形成的記憶體元件層的電學特性產生不利影響,從而能夠引發故障或不良的電元件效能。本文所述的形成可流動的低k介電層的方法具有顯著的優點以用於「刪減蝕刻」互連層形成製程中(在該製程中,可流動低k介電層用於填充及電隔離一個或多個圖案化金屬層的各個區域),此是由於所形成的可流動低k介電層氧化圖案化金屬層的暴露部分的傾向顯著降低所致。
圖1是說明根據一個實施例的方法100的流程圖,該方法100包括所執行的各種操作,該等操作用於在基板表面上形成基於碳氧化矽(SiOC)的可流動膜且減少其中的氧化。舉例而言,基板可包括金屬基板(諸如鋁和不鏽鋼)、半導體基板(諸如矽、絕緣體上矽(SOI)、砷化鎵)、玻璃基板和塑膠基板。圖案化基板一般包括將會以低k介電材料填充的超過一個的隙縫、溝槽、孔洞、通孔(via)或類似物。
在方塊102中,在不存在氧電漿的狀態下,介電前驅物和載氣經由氣體傳遞裝置(諸如雙通道噴頭(DCSH))流入處理腔室,而將介電前驅物傳送至基板上,該基板上形成有隙縫。
習知的可流動膜形成製程中,首先將含氧的電漿提供到處理腔室中,隨後將介電前驅物傳遞到配置在處理腔室中的圖案化基板之表面上,以將氧原子插入介電前驅物內的矽-矽鍵,而擴大形成於圖案化表面上的可流動膜的體積。藉此,在處理腔室中的電漿中所激發的氧離子和氧自由基無可避免地增加了在可流動膜的初始生長期間(亦即,在介電前驅物傳遞時)的氧濃度。具有增加的氧濃度的可流動膜傾向於氧化與可流動膜接觸的材料。另外,當介電前驅物傳遞到處理腔室中時,該介電前驅物可能會與激發的氧離子和氧自由基發生碰撞,此會非期望地改變介電前驅物的分子結構。
在本文提供的本案揭示內容的一些實施例中,為了在可流動膜的初始生長期間降低整個可流動膜內的氧濃度並且也大致上保有介電前驅物的分子結構,先將介電前驅物傳遞圖案化基板之表面,隨後才將該圖案化基板之表面暴露至電漿內形成的激發氧離子或氧自由基。
方塊102的一些實施例中,將介電前驅物傳遞到圖案化基板的表面包括,將該圖案化基板設定成約500密耳和3000密耳之間的雙通道噴頭(DSCH)間距。隨後,將介電前驅物以期望的流速(諸如介於約0.25克/分鐘(g/min)和約3g/min之間的流速,在本文中也稱為來自DSCH的每通道流速)傳遞至圖案化基板的表面。可將載氣(例如氬氣(Ar)或氦氣(He))以每DSCH之通道250sccm至約5000sccm之間的流速流入處理腔室。圖案化基板的表面能夠保持在約40°C至約150°C之間的降低的溫度下,例如在約80°C下。處理腔室的壓力可以維持於約0.5托耳至約3.0托耳之間。在一些實施例中,介電前驅物的流動可以在下一步驟(或下文論述的方塊104)開始之前的約1秒至約600秒之間開始,諸如約10至15秒之間開始。
介電前驅物可包括有機矽烷前驅物,該有機矽烷前驅物包括含矽與碳的聚合物或含矽、碳與氧的聚合物,該含矽、碳與氧的聚合物包含矽氧烷官能團(Si-O-Si)的重複單元。根據一些實施例,含矽與碳的聚合物可以擁有1或小於3的Si-O對Si的比例。此些比例與使用本文描述的方法的低k介電可流動膜的生產相關。透過計算含矽與碳前驅物中Si-O鍵的數目並除以含矽與碳前驅物中的矽原子數,計算出Si-O對Si的比例。例如,介電前驅物可以是八甲基環四矽氧烷(OMCTS(見下面的項目(1))),其Si-O:Si比為1,並且已發現與流動性程度的增加及介電常數的降低相關。一些實施例中,含矽與碳前驅物可無氮,以實現無氮的低k介電質的生產。
介電前驅物OMCTS可以以下述流速供應到處理腔室中:每DSCH之通道,每分鐘約0.25克(g/min)至約3g/min。載氣(諸如氬氣(Ar)或氦氣(He))可以以每DSCH之通道250sccm至約5000sccm之間的流速流入處理腔室。
介電前驅物TMOS可以以下述流速直接供應至處理腔室中:每DSCH之通道,每分鐘約0.05克(g/min)至約1g/min之間。載氣(例如氬氣(Ar)或氦氣(He))可以以每DSCH之通道50sccm至約1000sccm之間的流速流入處理腔室。可除了介電前驅物OMCTS之外還使用介電前驅物TMOS,或是單獨使用TMOS。
在一些範例中,介電前驅物可以是包括矽氧烷官能基團(Si-O-Si)的重複單元的其他有機矽烷,例如四甲基環四矽氧烷、六甲基二矽氧烷、四甲基二矽氧烷、二甲基二矽氧烷。在其他範例中,介電前驅物可以是不包括矽氧烷官能基團(Si-O-Si)重複單元的其他有機矽烷。在某些範例中,介電前驅物可以是其他有機矽烷,例如二甲基二氯矽烷(SiR2
Cl2
(見項目(3)),。
在一些其他範例中,介電前驅物可包括其他有機矽烷,例如聚二甲基矽氧烷(PDMS)。含矽與碳的聚合物(例如PDMS)能具有低的模數和黏度。因此,含矽和碳的聚合物可在沉積時流入隙縫且填充隙縫。含矽和碳的聚合物在低溫下進一步顯現低k介電質和化學穩定性。但是,含矽碳聚合物可能會在高溫下的其他製造製程中損失氫和碳,且轉化為二氧化矽(SiO2
)。
在方塊104,在將介電前驅物傳遞到圖案化基板的表面上後,將氧電漿與載氣(例如,Ar、He)一起提供到處理腔室中,以使傳遞到圖案化基板上的介電前驅物親水化(亦即,將羥基基團(-OH)插於該介電前驅物中)。如上文所論述,將含氧電漿傳遞到圖案化基板的表面是發生在:從將介電前驅物傳遞到圖案化基板的表面經過了一段期望時間之後。例如,在方塊102已經開始之後,在約1秒至約1800秒之間、諸如約10秒至15秒之間,將含氧的電漿傳遞到圖案化基板的表面。提供至處理腔室的處理區域中的氧電漿中所活化的氧(O2
)自由基引發在所傳遞的介電聚合物中的甲基R(-CH3
)被羥基(-OH)所置換。在方塊104中的親水化期間,可降低氧電漿中氧自由基的流速,並且可最小化氧暴露時間,以降低整個可流動膜中的氧濃度,同時最大化親水化的速率。
氧電漿能夠形成於處理腔室外的遠端電漿系統(RPS)中,其形成是藉由:離解含氧前驅物(例如分子氧(O2
)、臭氧(O3
))、氮氧化合物(例如,NO、NO2
、N2
O)、氫氧化合物(例如H2
O、H2
O2
)、碳氧化合物(CO、CO2
)。氧自由基的流速可以在每DSCH之通道約100sccm至約2000sccm之間,諸如250sccm至約2000sccm之間。載氣(例如,Ar、He)的流速可以在每DSCH之通道約0sccm至約10000sccm之間,例如500sccm至約6000sccm。在一個範例中,提供至遠端電漿源(RPS)以形成氧自由基的氧氣(O2
)的流速對氬氣(Ar)的流速之比在0.05與5之間,例如在0.1至4之間的比,或者是0.1至0.5之間的比,或者甚至是0.1至0.3之間的比。在腔室電漿區域中產生的氧自由基也可伴隨有在電漿中形成的離子化物質。在某些情況中,可能期望在遠端電漿系統中將含氧前驅物與含氮前驅物或含氫前驅物組合。氧自由基可包括O2
、H2
O、O3
、H2
O2
、N2
O、NO或NO2
中的一或多者。
在一些實施例中,在方塊104內執行處理的期間,也維持介電前驅物對氧自由基的流速的期望比例以及介電前驅物對載氣的總流速(例如,處理期間從不同的氣體源的所有氣體源提供到處理區域的所有氬氣或氦氣之流速的總和)的期望比例。在一個範例中,八甲基環四矽氧烷(OMCTS)的流速對氧自由基的流速的比為介於0.05至0.50之間,例如介於0.06到0.43之間的比,且八甲基環四矽氧烷(OMCTS)的流速對氬氣(Ar)的總流速的比介於0.01到0.08之間,例如介於0.02至0.07之間的比例。在另一範例中(除了OMCTS之外還提供TMOS),OMCTS的流速對氧自由基的流速之比在0.05至0.50之間,例如在0.06至0.43之間的比,OMCTS的流速對氬氣(Ar)的總流速的比在0.01至0.08之間,例如在0.02至0.07之間的比,且OMCTS的流速對TMOS的流速的比是在3.0至11.0之間。
在方塊106,在圖案化基板上使介電前驅物親水化之後,使介電前驅物固化,從而引起介電前驅物中聚合物之間的交聯,以形成基於碳氧化矽(SiOC)的可流動膜。在一些實施例中,執行固化製程,其中以受控的照射功率和波長將電磁輻射(例如,UV輻射)提供給介電前驅物,該介電前驅物維持在受控的處理溫度下達期望的處理持續時間。在一些實施例中,由於熱能,聚合物之間的交聯可在沒有UV輻射的情況下在同一沉積腔室中發生(例如,圖案化基板的表面可處於在約40°C至約150°C之間的溫度,例如約80°C)。作為替代方案,交聯可在介於約150°C至約500°C之間的溫度、約1托耳至約600托耳之間的壓力下在另一個腔室中發生。在一些實施例中,聚合物之間的交聯是由於熱能和利用UV輻射的UV能量而發生。執行方塊106中的製程,以最小化在製程期間的任何時刻由矽烷醇縮合反應產生的H2
O的濃度,以防止在圖案化基板上或內形成的各種特徵有非期望的氧化。相信習知的穩定化製程(例如熱穩定化製程)及/或不控制所產生的H2
O的濃度和處理溫度的製程會引發圖案化基板的多個部分有非期望的氧化,此是由於產生過量的H2
O及/或向反應產物提供過多的熱能或UV能量所致,此會導致所形成層內含氧成分的快速擴散以及下方材料的快速氧化。
如上所記載,當相鄰的介電聚合物中的矽烷醇基(Si-OH)中的羥基(-OH)反應時,相鄰的介電聚合物藉由形成Si-O-Si鍵而交聯,並且生成水(H2
O)。在方塊106中提供的介電前驅物中的聚合物的交聯降低了氧的濃度,同時增加了介電聚合物中的Si-O-Si鍵的濃度。一般而言,不希望其為限制,介電前驅物中的聚合物的親水化和交聯(方塊104和106)是在與其中執行傳遞介電前驅物(方塊102)的處理腔室不同的處理腔室中執行。大致上,該組操作(例如方塊102-106)可重複多次,以形成低k介電可流動膜的整體較厚的層,該低k介電可流動膜在整個所形成的含多層的低k介電可流動膜中有降低的氧濃度。
可在將惰性氣體提供到處理腔室中的同時執行介電前驅物的UV輻射。惰性氣體(例如,Ar或He)的流速可以在每DSCH之通道約1000sccm至約25000sccm之間。UV照射無可避免地提供能量至先前傳遞到圖案化基板的介電前驅物,此由於介電前驅物暴露於UV輻射而導致生成反應產物(例如,H2
O)。因此,必須控制介電前驅物的紫外線照射,使得該照射足夠交聯介電前驅物中的聚合物,同時防止低k介電可流動膜過早變成固體,並且防止被加熱的水蒸氣氧化圖案化基板中的下方的金屬。UV輻射的持續時間可以在約10秒至約30分之間,例如約180秒。合適的紫外光波長可以在240nm至600nm之間。用於UV輻射的UV燈功率可處於多達20W/cm2
的強度。UV輻射期間的圖案化基板的表面的溫度可維持在介於約150°C和約500°C之間,諸如在約150°C和約400°C之間,或者在約250°C至約385°C之間。在UV輻射期間處理腔室中的壓力可以維持於小於50托耳,諸如在約5托耳至約50托耳之間。介電前驅物(例如PDMS聚合物)具有耐熱性,並保持可流動、柔軟和可延展性。
沉積系統的實施例可併入用於生產積體電路晶片的更大型的製造系統。圖2顯示根據一個實施例的一個此類系統1001,該系統1001包括沉積腔室和固化腔室。在圖2中,一對前開式晶圓匣(FOUP)1002供應基板(例如,直徑為300mm的晶圓),基板由機械臂1004接收並且放置在低壓保持區域1006中。第二機械臂1010可用於在低壓保持區域1006和處理腔室1008a-f之間運輸基板。
處理腔室1008a-f可以包括一或多個系統部件,以用於在基板上沉積、固化及/或蝕刻可流動的介電膜。在一些實施例中,可以使用兩對處理腔室(例如1008c-d和1008e-f)在基板上沉積可流動的介電膜,而第三對處理腔室(例如1008a-b)可以用於UV固化所沉積的介電膜。因此,在一些實施例中,系統1001適於以下述方式執行方法100:首先在定位於兩對處理腔室之一對(例如1008c-d或1008e-f)中的兩個基板上同時執行方法100的方塊102和104,隨後,其次,將該等基板從該兩對處理腔室中的一對移送到第三對處理腔室(例如,1008a-b),其中在該等基板上執行方塊106。
一些實施例中,所有三對腔室(例如1008a-f)可用於在基板上沉積和固化可流動的介電膜。在一些替代實施例中,系統1001適於藉由以下述方式執行方法100:在定位於兩對處理腔室(例如1008a-f)之一對中的兩個基板上同時地依序執行方法100的所有方塊102-106。
另外,可以將處理腔室1008a-f之一或多者用作濕式處理腔室。此些處理腔室包括用於在包含水分的氣氛中加熱可流動的介電膜的腔室。
圖3A是根據一個實施例的具有腔室主體1164和蓋組件1165的處理腔室1101的示意圖。蓋組件1165大致上包括遠端電漿源1110、蓋1121和雙通道噴頭(DCSH)1153。遠端電漿源(RPS)1110可處理從氧氣源1181提供的含氧前驅物氣體。隨後,可以將RPS 1110中形成的氧電漿穿過耦接蓋1121的氣體入口組件1111和隔板1123傳遞,且進入腔室電漿區域1120中。諸如氬氣(Ar)、氦氣(He)及氮氣(N2
)之類的載氣及/或膜固化氣體傳遞到腔室電漿區域1120中,以從生長中或剛傳遞的膜中去除不需要的成分。蓋(亦即導電頂部部分)1121和雙通道噴頭(DCSH)1153之間配置有絕緣環1124,而容許相對於DCSH 1153將交流電位施加於蓋1121。
DCSH 1153配置在腔室電漿區域1120與基板處理區域1170之間,並且允許存在於腔室電漿區域1120內的電漿流出物(其為前驅物或其他氣體的離子化或中性衍生物,也稱為自由基)傳送通過複數個穿孔(through-hole)1156進入基板處理區域1170,而在矽與碳前驅物進入腔室電漿區域1120之前不直接激發該矽與碳前驅物。電漿流出物的流動是由圖3A中的實線箭頭「A」所指示。基板1172配置在基板支撐件1173上,該基板支撐件1173配置於基板處理區域1170內。DCSH 1153也具有一個或多個中空容積1151,該中空容積1151能夠以介電前驅物填充,該介電前驅物諸如OMCTS和TMOS,由前驅物源1182提供。介電前驅物從一或多個中空容積1151透過小型孔洞1155傳送,且進入基板處理區域1170,繞過腔室電漿區域1120。介電前驅物的流動由圖3A中的虛線箭頭所指示。排放環1161用於透過使用排放泵1183而均勻地排空處理區域1170。DCSH 1153可以比穿孔1156的最小直徑的長度更厚。透過形成部分地穿過DCSH 1153的穿孔1156的較大直徑部分,而可限制穿孔的最小直徑1150之長度,以維持從腔室電漿區域1120到基板處理區域1170的電漿流出物的流動。一些實施例中,穿孔1156的最小直徑之長度可與穿孔1156的最小直徑相同數量級或更小。
在一些實施例中,圖2中的一對處理腔室(例如,1008c-d)(稱作雙腔室)可用於在基板上沉積可流動的介電膜。該等處理腔室(例如1008c-d)之各者能夠具有圖3A所描繪的處理腔室1101的剖面結構。上述的每DCSH之通道的流速對應於經由相對應的DCSH 1153進入每個腔室(例如1008c-d)的流速。基板1172可移送到真空下的另一成對的雙腔室(例如1008a-b),以在將介電膜沉積在基板1172上之後,進行介電膜的UV固化。
圖3B是根據一個實施例的DCSH 1153的示意圖。DCSH 1153可以透過穿孔1156傳遞腔室電漿區域1120中存在的電漿流出物和載氣。
在一些實施例中,穿孔1156的數目可在約60個至約2000個之間。穿孔1156可以具有圓形或多種形狀。在一些實施例中,穿孔1156的最小直徑1150可以在約0.5mm與約20mm之間或在約1mm與約6mm之間。穿孔的剖面形狀可以作成錐形、圓柱形或兩種形狀的組合。在一些實施例中,用於將介電前驅物引入基板處理區域1170中的小型孔洞1155的數目可以在約100個至約5000個之間或在約500個至約2000個之間。小型孔洞1155的直徑可在約0.1mm至約2mm之間。
儘管前文是針對特定實施例,但可設計其他和進一步的實施例而不脫離本案揭示內容之基本範疇,並且本案揭示內容之範疇是由所附的申請專利範圍所決定。
100:方法
102~106:方塊
1001:系統
1002:前開式晶圓匣
1004:機械臂
1006:低壓保持區域
1008a~1008f:處理腔室
1010:第二機械臂
1101:處理腔室
1110:遠端電漿源
1111:氣體入口組件
1120:腔室電漿區域
1121:蓋
1123:隔板
1124:絕緣環
1150:直徑
1151:中空容積
1153:雙通道噴頭
1155:小型孔洞
1156:穿孔
1161:排放環
1164:腔室主體
1165:蓋組件
1170:基板處理區域
1172:基板
1173:基板支撐件
1181:氧氣源
1182:前驅物源
1183:排放泵
為了能夠詳細理解本案揭示內容的上述特徵的方式,可透過參考實施例(其中一些於附圖中說明)而獲得上文簡要總結的本案揭示內容的更特定的描述。然而,應注意,附圖僅說明本案揭示內容的典型實施例,因此不應被認為是對本案揭示內容之範疇的限制,因為本案揭示內容可允許其他等效的實施例。
圖1是流程圖,顯示根據一個實施例的沉積系統中的所選步驟,該沉積系統形成基於碳氧化矽(SiOC)的可流動膜且減少其中的氧化。
圖2是根據一個實施例的沉積腔室和固化腔室的系統的示意圖。
圖3A是根據一個實施例的處理腔室的示意側視剖面圖。
圖3B是根據一個實施例的噴頭的示意底視圖。
為了明確起見,只要可適用,則使用相同的元件符號指定附圖間共通的相同元件。此外,一個實施例的元件可有利地適用在本文描述的其他實施例中。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
1101:處理腔室
1110:遠端電漿源
1111:氣體入口組件
1120:腔室電漿區域
1121:蓋
1123:隔板
1124:絕緣環
1150:直徑
1151:中空容積
1153:雙通道噴頭
1155:小型孔洞
1156:穿孔
1161:排放環
1164:腔室主體
1165:蓋組件
1170:基板處理區域
1172:基板
1173:基板支撐件
1181:氧氣源
1182:前驅物源
1183:排放泵
Claims (20)
- 一種在一溝槽上面形成一低k可流動介電膜的方法,該溝槽形成於一圖案化基板的一表面上,該方法包括: 以一第一流速將一含矽與碳(silicon and carbon containing)前驅物傳遞至一第一基板處理腔室的一基板處理區域中達一第一段時間及一第二段時間; 使一含氧前驅物流進一電漿源的一遠端電漿區域中,同時點燃一遠端電漿以形成一自由基氧前驅物; 在經過該第一段時間之後且於該第二段時間期間,使該自由基氧前驅物以一第二流速流進該基板處理區域;及 在經過該第二段時間之後,將該含矽與碳介電前驅物暴露至電磁輻射達一第三段時間,其中該電磁輻射是以一第一波長及一第一功率提供。
- 如請求項1所述之方法,其中該含矽與碳前驅物具有小於3的Si-O:Si比。
- 如請求項1所述之方法,其中該含矽與碳前驅物包括:八甲基環四矽氧烷(OMCTS)、四甲基環四矽氧烷(TMCTS)、六甲基二矽氧烷(HMDSO)、四甲基二矽氧烷(TMDSO)、二甲基二矽氧烷(DMDSO)、或二甲基二氯矽烷(SiR2 Cl2 )。
- 如請求項1所述之方法,其中該自由基氧前驅物包括:O2 、H2 O、O3 、H2 O2 、N2 O、NO或NO2 。
- 如請求項1所述之方法,其中在該第二段時間期間,使該自由基氧前驅物流進該基板處理區域進一步包括: 將該第一基板處理腔室的該基板處理區域中的壓力控制為介於0.5托耳至3.0托耳之間的一壓力;及 將該圖案化基板的溫度控制為介於攝氏40度至攝氏150度之間的一溫度。
- 如請求項1所述之方法,進一步包括: 在經過該第二段時間後,將該圖案化基板從該第一基板處理腔室移送到一第二基板處理腔室,其中 將該含矽與碳介電前驅物暴露至電磁輻射達該第三段時間的方法是在該第二基板處理腔室中執行; 在該第三段時間期間,該第二基板處理腔室的該基板處理區域維持於介於1托耳至600托耳之間的一壓力;及 在該第三段時間期間,該圖案化基板維持於介於攝氏150度至攝氏500度之間的一溫度。
- 如請求項1所述之方法,其中該圖案化基板包括一金屬,該金屬選自由鈦(Ti)、鉭(Ta)、鎢(W)、鈷(Co)、銅(Cu)和鋁(Al)所組成之群組。
- 如請求項1所述之方法,其中該圖案化基板包括一材料,該材料選自由BCTe、GeSiAsTe、GeAsSe及SeAsGeSi組成之群組。
- 如請求項1所述之方法,其中該圖案化基板的至少一部分包括一材料,該材料包括鍺、銻及碲。
- 如請求項1所述之方法,其中 該第一流速介於每分鐘0.25克(g/mim)至每分鐘3克(g/min)之間,且該第一段時間介於1秒至600秒之間; 該第二流速介於100sccm至2000sccm之間,且該第二段時間介於1秒至1800秒之間;及 該第一波長介於240nm至600nm之間,且該第三段時間介於10秒至30分之間。
- 一種在一溝槽上面形成一低k可流動介電膜的方法,該溝槽形成於一圖案化基板的一表面上,該方法包括: 以一第一流速將一含矽與碳前驅物傳遞至一第一基板處理腔室的一基板處理區域中達一第一段時間與一第二段時間; 使一含氧前驅物流入一電漿源的一遠端電漿區域,同時點燃一遠端電漿以形成一自由基氧前驅物; 在經過該第一段時間之後並且在該第二段時間期間,以一第二流速使該自由基氧前驅物流進該基板處理區域中;以及 在經過該第二段時間之後,將該含矽與碳前驅物暴露於電磁輻射達一第三段時間,同時該圖案化基板維持在攝氏40度至攝氏500度之間的一溫度,其中該電磁輻射是以一第一波長和一第一功率提供。
- 如請求項11所述之方法,其中該含矽與碳前驅物具有小於3的Si-O:Si比。
- 如請求項11所述之方法,其中該含矽與碳前驅物包括:八甲基環四矽氧烷(OMCTS)、四甲基環四矽氧烷(TMCTS)、六甲基二矽氧烷(HMDSO)、四甲基二矽氧烷(TMDSO)、二甲基二矽氧烷(DMDSO)或二甲基二氯矽烷(SiR2 Cl2 )。
- 如請求項11所述之方法,其中該自由基氧前驅物包括:O2 、H2 O、O3 、H2 O2 、N2 O、NO或NO2 。
- 如請求項11所述之方法,其中在該第二段時間期間,使該自由基氧前驅物流進該基板處理區域進一步包括: 將該第一基板處理腔室的該基板處理區域中的壓力控制為介於0.5托耳至3.0托耳之間的一壓力;及 將該圖案化基板的溫度控制為介於攝氏40度至攝氏150度之間的一溫度。
- 如請求項11所述之方法,進一步包括: 在經過該第二段時間後,將該圖案化基板從該第一基板處理腔室移送到一第二基板處理腔室,其中 將該含矽與碳介電前驅物暴露至電磁輻射達該第三段時間的方法是在該第二基板處理腔室中執行; 在該第三段時間期間,該第二基板處理腔室的該基板處理區域維持於介於1托耳至600托耳之間的一壓力;及 在該第三段時間期間,該圖案化基板維持於介於攝氏150度至攝氏500度之間的一溫度。
- 如請求項11所述之方法,其中該圖案化基板包括一金屬,該金屬選自由鈦(Ti)、鉭(Ta)、鎢(W)、鈷(Co)、銅(Cu)和鋁(Al)所組成之群組。
- 如請求項11所述之方法,其中該圖案化基板包括一材料,該材料選自由BCTe、GeSiAsTe、GeAsSe及SeAsGeSi組成之群組。
- 如請求項11所述之方法,其中該圖案化基板的至少一部分包括一材料,該材料包括鍺、銻、及碲。
- 如請求項11所述之方法,其中 該第一流速介於每分鐘0.25克(g/mim)至每分鐘3克(g/min)之間,且該第一段時間介於1秒至600秒之間; 該第二流速介於100sccm至2000sccm之間,且該第二段時間介於1秒至1800秒之間;及 該第一波長介於240nm至600nm之間,且該第三段時間介於10秒至30分之間。
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