TW201943676A - 晶粒取向之m型六方肥粒鐵、其製造方法、包含該肥粒鐵之物品及無線供電裝置 - Google Patents

晶粒取向之m型六方肥粒鐵、其製造方法、包含該肥粒鐵之物品及無線供電裝置 Download PDF

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TW201943676A
TW201943676A TW108112958A TW108112958A TW201943676A TW 201943676 A TW201943676 A TW 201943676A TW 108112958 A TW108112958 A TW 108112958A TW 108112958 A TW108112958 A TW 108112958A TW 201943676 A TW201943676 A TW 201943676A
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grain
oriented
iron
type hexagonal
mhz
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TW108112958A
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亞傑 陳
凱文 林
張力
麥克爾 S 懷特
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美商羅傑斯公司
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Abstract

一種晶粒取向之M型六方肥粒鐵具有式MeFe12O19以及一摻雜劑,該摻雜劑有效提供在一c平面中之平面磁各向異性及磁化或在六方結晶結構中之一錐面各向異性,其中Me係為Sr2+、Ba2+或Pb2+,且其中肥粒鐵晶粒之大於30%、較佳地大於80%之c軸垂直於該c平面對齊。

Description

晶粒取向之M型六方肥粒鐵、其製造方法、包含該肥粒鐵之物品及無線供電裝置
相關申請案之交叉參考:
本申請案主張於2018年4月12日提出申請之美國臨時申請案第62/656,522號之優先權及權益,該美國臨時申請案之全部內容以引用方式併入本文中。
本揭露係關於在一寬操作頻率範圍上具有高導磁率及低磁損耗之晶粒取向之M型六方肥粒鐵。
尖晶石及六方肥粒鐵具有相當大的潛力用於例如垂直磁紀錄、天線、微波吸收器及電磁干擾抑制器等各種低剖面(low-profile)電子裝置中。隨著微波通訊市場之不斷擴大,可對肥粒鐵壓塊(compact)或薄膜之磁性及微波特性進行調整以滿足各種應用之要求。
微波頻率下之高導磁率及低磁損耗將為生成用於電子通訊之電性小型天線提供材料。肥粒鐵基板之獨特磁介電性質使得能夠達成天線元件之小型化,而不會導致在高介電常數基板中經常觀察到之後續帶寬損失。因此,磁介電材料在廣泛用於個人行動電話、基站等領域中之寬帶寬天線之小型化中具有巨大之應用潛力。舉例而言,微波天線及電感器二者皆為先進微波通訊中之重要組件。
需要磁介電特性適用於微波通訊應用及其他應用之新型肥粒鐵。
在一態樣中,一種晶粒取向之M型六方肥粒鐵具有式
MeFe12 O1 9
以及一摻雜劑,該摻雜劑有效提供在一c平面中之平面磁各向異性及磁化、或在六方結晶結構中之一易錐面各向異性(easy cone anisotropy),其中Me係為Sr2+ 、Ba2+ 或Pb2+ ,且其中肥粒鐵晶粒之大於30%、較佳地大於80%之c軸垂直於該c平面對齊。
在另一態樣中,包含含有該晶粒取向之M型六方肥粒鐵之物品。
在又一態樣中,一種製造經摻雜的晶粒取向之M型六方肥粒鐵之方法包含:製備複數個肥粒鐵晶粒,該等肥粒鐵晶粒具有式
MeFe12 O19
包含一摻雜劑,該摻雜劑有效提供在一c平面中之平面磁各向異性及易磁化、或一錐面各向異性,其中Me係為 Sr2+ 、Ba2+ 或Pb2+ ;對齊該等肥粒鐵晶粒,使得該等肥粒鐵晶粒之大於30%、較佳地大於80%之c軸垂直於該c平面對齊,以提供該經摻雜的晶粒取向之M型六方肥粒鐵;以及視需要在大於800℃、較佳地800℃至1350℃之一溫度下對該經摻雜的晶粒取向之M型六方肥粒鐵進行燒結以提供密度為一理論密度之至少85%、較佳地大於一理論密度之90%之一經燒結材料。
藉由閱讀以下實施方式及隨附發明申請專利範圍,熟習此項技術者將領會並理解上述及其他特徵。
本文中所闡述的係為新型晶粒取向之M型六方肥粒鐵,該新型晶粒取向之M型六方肥粒鐵能夠用於提供在一寬操作頻率範圍(例如在30至1000 MHz之VHF頻段及300至1000 MHz之UHF頻段)上具有高導磁率及低磁損耗之磁介電材料。本文中所揭露之材料可具有大於或等於約80 MHz、100 MHz、或甚至150 MHz及以上之相對導磁率,先前對於六方肥粒鐵材料並未觀察到此種情況。
在一態樣中,一種晶粒取向之M型六方肥粒鐵具有式
MeFe12 O19
以及一摻雜劑,該摻雜劑有效提供在一c平面(即,易基平面(easy basal plane))中之平面磁各向異性及易磁化、或在六方結晶結構中之易錐面各向異性,其中Me係為Sr2+ 、Ba2+ 或Pb2+ ,且其中該肥粒鐵之大於30%、較佳地大於80%之晶粒沿晶體結構之垂直於該c平面之c軸對齊。晶粒取向之六方肥粒鐵亦被稱為織構(textured)六方肥粒鐵。
六方肥粒鐵具有一晶體結構,其中平面軸被稱為「a」(a1、a2、a3) 軸。c平面亦被稱為基平面。c軸係為c平面外之軸。純MeFe12 O19 結構中一合適的摻雜劑或摻雜劑之混合物可輕易地調整自單軸c軸至c平面或易錐平面(easy cone-plane)之一磁各向異性。因此,易磁化可自c軸修改為c平面或易錐體。同時,c軸成為一難軸,而c平面或錐平面係易磁化。本發明者開發出了在c平面或錐平面中保持易磁化的同時沿晶體結構之c軸具有出乎意料地高的對齊之M型六方肥粒鐵。在晶粒取向之肥粒鐵中,肥粒鐵之大於30%、較佳地大於80%之晶粒沿晶體結構之垂直於c平面之c軸對齊。
摻雜劑提供在c平面中之平面磁各向異性(亦即,易磁化)、或在晶體中之一易錐面各向異性。易軸被定義為磁化方向之較佳軸。本文中所述之一易錐面各向異性係为其中穩定的磁性狀態圍繞一特定對稱軸成一角度之各向異性。摻雜劑可係為單一摻雜劑或摻雜劑之一混合物。在一態樣中,摻雜劑包含Co、Ti、Zr、Sn、Ir、Sc、In、Zn、Mg、Cu、Ni、Bi、Al、Ga、La或其組合。更具體而言,摻雜劑包含Co2+ /Ti4+ 、Co2+ /Zr4+ 、Co2+ /Sn4+ 、Co2+ /Ir4+ 、Bi2+ /Co2+ /Ti4+ 、Bi2+ /Co2+ /Zr4+ 、Bi2+ /Co2+ /Sn4+ 或其組合。
在一態樣中,摻雜劑替代晶粒取向之M型六方肥粒鐵其中至少一部分Fe。
本揭露之具體晶粒取向之M型六方肥粒鐵包含具有以下式之肥粒鐵:Bix -Ba1-x (CoTi)y Fe12-2y O19 (x=0-0.8、y=0.5-1.5)、Ba (CoTi)x Fe12-2x O19 (x=0.5-1.5)、Ba (CoZr)x Fe12-2x O19 (x=0.5-1.5)、Ba(CoSn)x Fe12-2x O19 (x=0.5-1.5)、Ba(CoIr)x Fe12-2x O19 (x=0.5-1.5)、Bix Sr1-x (CoTi)y -Fe12-2y O19 (x=0-0.8、y=0.5-1.5)、Sr(CoTi)x Fe12-2x O19 (x=0.5-1.5)、Sr (CoZr)x Fe12-2x O19 (x=0.5-1.5)、Sr(CoSn)x Fe12-2x O19 (x=0.5-1.5)及Pb(CoTi)x Fe12-2x O19 (x=0.5-1.5)。較佳的晶粒取向之M型六方肥粒鐵包含具有以下式之肥粒鐵:Bix Ba1-x (CoTi)y Fe12-2y O19 (x=0-0.8、y=0.5-1.5)、Ba (CoTi)x Fe12-2x O19 (x=0.5-1.5)、Ba (CoZr)x Fe12-2x O19 (x=0.5-1.5)及Ba(CoSn)x Fe12-2x O19 (x=0.5-1.5)。一具體晶粒取向之M型六方肥粒鐵具有式(Bix Sry Ba1-x-y ) (CoTi)z Fe12-2z O19 ,其中x係為0.05至0.5,y係為0至1,且z係為0.5-2.0。在此具體肥粒鐵中,Sr替代一部分Ba。
晶粒取向之M型六方肥粒鐵可具有多種有利特性其中之一或多者。相對導磁率係為一種指示一磁性材料在高頻率應用中之效能之特性,且係為相對於自由物質與一施加磁場線性對應之材料的磁化程度之度量。相對導磁率可藉由一阻抗分析儀在1至1000 MHz上進行量測或藉由具有同軸空線固定裝置(co-axial airline fixture)之向量網路分析儀(vector network analyzer,VNA)在0.5至10 GHz上進行量測。晶粒取向之M型六方肥粒鐵可具有在50 MHz至300 MHz之一操作頻率上大於50、大於80、大於100或大於150之一面內相對導磁率。晶粒取向之M型六方肥粒較佳地可具有在100 MHz之一操作頻率下大於50、大於80、大於100或大於150之一面內相對導磁率。
磁損耗正切、介電損耗正切及介電常數亦為 一材料之磁介電特性之度量。晶粒取向之M型六方肥粒鐵可具有在100 MHz下小於0.5 、或甚至小於0.2、較佳地在100 MHz下小於0.1之一磁損耗正切。磁損耗正切可藉由阻抗分析儀或具有同軸空線固定裝置之VNA進行量測。
晶粒取向之M型六方肥粒鐵可具有在0至300 MHz上小於0.02、較佳地在30至300 MHz下小於0.03之一介電損耗正切。介電損耗正切可藉由阻抗分析儀或具有同軸空線固定裝置之VNA進行量測。
晶粒取向之M型六方肥粒鐵可具有在30至300 MHz上為10至30或在300至1000 MHz上為6至30之一介電常數。該介電常數可藉由一阻抗分析儀或具有同軸空線固定裝置之一VNA進行量測。
在一態樣中,晶粒取向之M型六方肥粒鐵具有在50至300 MHz之一操作頻率下大於80之一面內相對導磁率;以及在100 MHz下小於0.2、較佳地在100 MHz下小於0.1之一磁損耗正切。
在另一態樣中,晶粒取向之M型六方肥粒鐵具有在30至300 MHz上小於0.5或小於0.2、較佳地在30至300 MHz上小於0.1之一磁損耗正切;以及在30至300 MHz上小於0.05、較佳地在30至300 MHz上小於0.02之一介電損耗正切。
在另一態樣中,晶粒取向之M型六方肥粒鐵各自具有在50 MHz至300 MHz之一操作頻率上大於50、或在100 MHz之一操作頻率下大於50之一面內導磁率;在100 MHz下小於0.5之一磁損耗正切;在0至300 MHz上小於0.02之一介電損耗正切;以及在30至300 MHz上為10至30或在300-1000 MHz上為6至30之一介電常數。
在再一態樣中,晶粒取向之M型六方肥粒鐵各自具有在50 MHz至300 MHz之一操作頻率上大於80、或在100 MHz之一操作頻率下大於80之一面內導磁率;在100 MHz下小於0.2之一磁損耗正切;在30至300 MHz上小於0.03之一介電損耗正切;以及在30至300 MHz上為10至30或在300至1000 MHz上為6至30之一介電常數。
在再一態樣中,晶粒取向之M型六方肥粒鐵具有在50 MHz至300 MHz之一操作頻率上大於150、或在100 MHz之一操作頻率下大於150之一面內導磁率;在100 MHz下小於0.1之一磁損耗正切;在30至300 MHz下小於0.03之一介電損耗正切;以及在300至1000 MHz上為6至30之一介電常數。
在c平面中(沿a軸)晶粒取向之M型六方肥粒鐵之晶粒大小可為0.5微米(μm)至2微米、2微米至6微米、6微米至20微米、20微米至100微米、100微米至200微米或高達300微米。
在一態樣中,對晶粒取向之M型六方肥粒鐵進行燒結。燒結可在大於800°C、較佳地在800°C至1350°C之一溫度下執行。經燒結之晶粒取向之M型六方肥粒鐵可具有為一理論密度之至少85%、較佳地為一理論密度之至少90%之一燒結密度。藉由晶體結構及化學配方或X射線繞射量測來計算該理論密度。
本文中亦包括包含本文中所述之晶粒取向之M型六方肥粒鐵之一物品。實例性物品包括一電感器、一垂直磁記錄、一天線、一微波吸收器、一電磁干擾抑制器或一屏蔽材料,例如在無線供電裝置及近場通訊中之屏蔽材料。在消費電子裝置之情形中,預期經摻雜的晶粒取向之M型六方肥粒鐵在存在使用者之手或頭部之情況下提供改善的效能、更佳的吸收輻射特性等。
本文中亦包含一種製造經摻雜的晶粒取向之M型六方肥粒鐵之方法,該方法包含:製備複數個肥粒鐵晶粒,該等肥粒鐵晶粒具有式
MeFe12 O19
包含一摻雜劑,該摻雜劑有效提供在c平面中之平面磁各向異性及易磁化、或一錐面各向異性,其中Me係為Sr2+ 、Ba2+ 或Pb2+ ;對齊該等肥粒鐵晶粒,使得該等肥粒鐵晶粒之大於30%、較佳地大於80%之c軸垂直於該c平面對齊,以提供該經摻雜的晶粒取向之M型六方肥粒鐵;以及視需要在大於800℃、較佳地800℃至1350℃之一溫度下對該經摻雜的晶粒取向之M型六方肥粒鐵進行燒結以提供密度為一理論密度之至少85%、較佳地大於一理論密度之90%之一經燒結材料。
在一態樣中,該摻雜劑係藉由以CoTi、CoZr或CoSn替代一部分Fe而提供。
在一態樣中,製備單晶粒包含煅燒及燒結乾粉、一溶膠-凝膠製程、一熔鹽製程、一共沉澱製程、一溶膠-凝膠水熱製程、一水熱製程或其他化學製程。煅燒/燒結乾粉係為一種傳統的陶瓷製程。
在一傳統陶瓷製程之一實例中,BaFe12 O19 粉末係藉由對BaCo3 及Fe2 O3 粉末進行球磨、然後在900℃至1200℃下進行煅燒而製備的。舉例而言,將粉末摻雜以Bi2 O3 ,然後進行額外的球磨以摻入摻雜劑。
在一實例性溶膠-凝膠製程中,Ba(或Sr)Fe12 O19 係藉由將Ba(或Sr) (NO3 )2 及Fe (NO3 )3 ·9H2 O溶解在例如乙二醇等溶劑中、然後脫水生成凝膠、並煅燒得到BaFe12 O19 或SrFe12 O19 粉末而製備的。
在一實例性熔鹽製程中,使用例如氯化物或硫酸鹽等熔鹽。將反應物及鹽之一混合物加熱至高於鹽之熔融溫度,並形成產物顆粒。在冷卻反應物質時,使用鹽之溶劑(通常為水)除去鹽。
在一實例性共沉澱製程中,藉由將硝酸鐵及乙酸鋇粉末按一選定Fe3+ /Ba2+ 莫耳比混合並在室溫下用NaOH共沉澱而製備BaFe12 O19 粉末。然後對共沉澱產物進行煅燒以提供六方肥粒鐵。
在一實例性水熱製程中,將含有氫氧化鋇及FeOOH之一水懸浮液在例如一高壓釜中緩慢加熱至250°C至325°C之一溫度,然後冷卻至室溫以提供六方肥粒鐵。
舉例而言,由以上方法生產之六方肥粒鐵粉末其中之任一者皆可藉由添加例如Bi2 O3 等摻雜劑、然後進行球磨以摻入該摻雜劑而進行摻雜。作為另一選擇,可在合成六方肥粒鐵期間添加摻雜劑。
在一態樣中,對齊該等晶粒包含在向該等晶粒施加垂直機械壓力的同時向該等晶粒施加一旋轉面內磁場、在施加或未施加一磁場之情況下向該等晶粒施加一機械剪切力或所述二者之一組合。在向該等晶粒施加機械壓力的同時施加一旋轉磁場在對齊期間提供肥粒鐵粉末壓制。在一具體態樣中,對齊該等晶粒包含施加一旋轉面內磁場,該旋轉面內磁場具有強度大於2000奧斯特(Oersted, Oe)、較佳地大於8000奧斯特之一磁場。
在該製造經摻雜的晶粒取向之M型六方肥粒鐵之方法中,在對齊該等肥粒鐵晶粒期間,該方法視需要包含對該晶粒取向之M型六方肥粒鐵進行成型。亦即,可同時應用磁場對齊及機械按壓以提供通常被稱為一生坯(green body)之一粉末壓塊(powder compact)。在形成該生坯之後可例如在900℃至1300℃之一溫度下進行燒結2至10小時。在燒結之前,可將生坯壓塊切割成一指定尺寸。可在一模具中對該生坯壓塊進行燒結以提供包含晶粒取向之M型六方肥粒鐵之一組件之形狀。
藉由以下態樣進一步示出本發明。
態樣1:一種晶粒取向之M型六方肥粒鐵,具有式
MeFe12 O19
以及一摻雜劑,該摻雜劑有效提供在c平面中之平面磁各向異性或在六方結晶結構中之一錐面各向異性,其中Me係為Sr2+ 、Ba2+ 或Pb2+ ,且
其中該肥粒鐵之大於30%、較佳地大於80%之晶粒沿晶體結構之垂直於該c平面之c軸對齊。
態樣2:如態樣1所述之晶粒取向之M型六方肥粒鐵,其中該摻雜劑包含Co、Ti、Zr、Sn、Sc、In、Zn、Mg、Cu、Ni、Bi、Al、Ga、La或其組合。
態樣3:如態樣1所述之晶粒取向之M型六方肥粒鐵,其中該摻雜劑包含Co2+ /Ti4+ 、Co2+ /Zr4+ 、Co2+ /Sn4+ 、Bi2+ /Co2+ /Ti4+ 、Bi2+ /Co2+ /Zr4+ 、Bi2+ /Co2+ /Sn4+ 或其組合。
態樣4:如態樣1所述之晶粒取向之M型六方肥粒鐵,具有式Bix -Ba1-x (CoTi)y Fe12-2y O19 (x=0-0.8、y=0.5-1.5)、Ba (CoTi)x Fe12-2x O19 (x=0.5-1.5)、Ba (CoZr)x Fe12-2x O19 (x=0.5-1.5)、Ba(CoSn)x Fe12-2x O19 (x=0.5-1.5)、Ba(CoIr)x Fe12-2x O19 (x=0.5-1.5)、Bix Sr1-x (CoTi)y -Fe12-2y O19 (x=0-0.8、y=0.5-1.5)、Sr(CoTi)x Fe12-2x O19 (x=0.5-1.5)、Sr (CoZr)x Fe12-2x O19 (x=0.5-1.5)、Sr(CoSn)x Fe12-2x O19 (x=0.5-1.5)或Pb(CoTi)x Fe12-2x O19 (x=0.5-1.5)。
態樣5:如態樣1所述之晶粒取向之M型六方肥粒鐵,具有式Bix Ba1-x (CoTi)y Fe12-2y O19 (x=0-0.8、y=0.5-1.5)、Ba (CoTi)x Fe12-2x O19 (x=0.5-1.5)、Ba (CoZr)x Fe12-2x O19 (x=0.5-1.5)或Ba(CoSn)x Fe12-2x O19 (x=0.5-1.5)。
態樣6:如態樣1所述之晶粒取向之M型六方肥粒鐵,其中Me係由Sr部分替代Ba的Ba2+ ,且具有式(Bix Sry Ba1-x-y ) (CoTi)z Fe12-2z O19 (x=0-0.8、y=0-1、z=0.5-2.0)。
態樣7:如態樣1至6其中任一或多個態樣所述之晶粒取向之M型六方肥粒鐵,其中該晶粒取向之M型六方肥粒鐵具有至少以下其中之一
一面內導磁率
在50 MHz至300 MHz之一操作頻率上大於50、大於80、大於100或大於150,
較佳地在100 MHz之一操作頻率下大於50、大於80、大於100或大於150;
一磁損耗正切
在100 MHz下小於0.5或0.2,
較佳地在100 MHz下小於0.1;
一介電損耗正切
在0至300 MHz上小於0.02,
較佳地在30至300 MHz下小於0.03;或
一介電常數
在30至300 MHz上為10至30,或
在300至1000 MHz上為6至30。
態樣8:如態樣7所述之晶粒取向之M型六方肥粒鐵,其中該晶粒取向之M型六方肥粒鐵具有:
在30至300 MHz上小於0.2、較佳地在30至300 MHz上小於0.1之一磁損耗正切;以及
在30至300 MHz上小於0.05、較佳地在30至300 MHz上小於0.02之一介電損耗正切。
態樣9:如態樣7所述之晶粒取向之M型六方肥粒鐵,其中該晶粒取向之M型六方肥粒鐵具有
在50至300 MHz之一操作頻率下大於80之一面內導磁率;以及
在100 MHz下小於0.2、較佳地在100 MHz下小於0.1之一磁損耗正切。
態樣10:如態樣1至9其中任一或多個態樣所述之晶粒取向之M型六方肥粒鐵,其中該六方肥粒鐵具有為一理論密度之至少85%、較佳地為一理論密度之至少90%之一燒結密度。
態樣11:如態樣1至10其中任一或多個態樣所述之晶粒取向之M型六方肥粒鐵,其中在該c平面中的晶粒大小為0.5微米至2微米、2微米至6微米、6微米至20微米、20微米至100微米、100微米至200微米或高達300微米。
態樣12:一種物品,包含如態樣1至11其中任一或多個態樣所述之晶粒取向之M型六方肥粒鐵。
態樣13:如態樣12所述之物品,其中該物品係為一電感器、一垂直磁紀錄、一天線、一微波吸收器、一電磁干擾抑制器或一屏蔽材料。
態樣14:一種無線供電裝置或近場通訊裝置,包含如態樣13所述之屏蔽材料。
態樣15:一種製造如態樣1至11其中任一或多個態樣所述之經摻雜的晶粒取向之M型六方肥粒鐵的方法,該方法包含:
製備複數個肥粒鐵晶粒,該等肥粒鐵晶粒具有式
MeFe12 O19
包含一摻雜劑,該摻雜劑有效提供在c平面中之平面磁各向異性及在該c平面中之易磁化、或一易錐面各向異性,其中Me係為Sr2+ 、Ba2+ 或Pb2+
對齊該等肥粒鐵晶粒,使得大於30%、較佳地大於80%之該等肥粒鐵晶粒沿晶體結構之垂直於該c平面之c軸對齊,以提供該經摻雜的晶粒取向之M型六方肥粒鐵;以及
視需要在大於800℃、較佳地800℃至1350℃之一溫度下對該經摻雜的晶粒取向之M型六方肥粒鐵進行燒結以提供密度為一理論密度之至少85%、較佳地大於一理論密度之90%之一經燒結材料。
態樣16:如態樣15所述之方法,其中該摻雜劑係藉由以CoTi、CoZr或CoSn替代一部分Fe而提供。
態樣17:如態樣15及16其中任一或多個態樣所述之方法,其中製備單晶粒包含煅燒及燒結乾粉、一溶膠-凝膠製程、一熔鹽製程、一共沉澱製程、一水熱製程或一化學合成製程。
態樣18:如態樣15至17其中任一或多個態樣所述之方法,其中對齊該等晶粒包含在向該等晶粒施加垂直機械壓力的同時向該等晶粒施加一旋轉面內磁場、在施加或未施加一旋轉磁場之情況下向該等晶粒施加一機械剪切力或所述二者之一組合。
態樣19:如態樣18所述之方法,其中對齊該等晶粒包含施加一旋轉面內磁場,該旋轉面內磁場具有強度大於2000奧斯特、較佳地大於8000奧斯特之一磁場。
態樣20:如態樣15至19其中任一或多個態樣所述之方法,包含在對齊該等肥粒鐵晶粒期間,對該晶粒取向之M型六方肥粒鐵進行成型。
態樣21:如態樣15至20其中任一或多個態樣所述之方法,包含在燒結之前將該晶粒取向之M型六方肥粒鐵切割成一指定尺寸。
一般而言,組成物、方法及物品可作為另一選擇包含本文所揭露之任何成分、步驟或組件、由任何成分、步驟或組件組成、或者基本上由任何成分、步驟或組件組成。組成物、方法及物品可另外或作為另一選擇被配製、實施或製作成沒有或實質上不含對於達成本發明申請專利範圍之功能或目標並非必要之任何成分、步驟或組件。
使用用語「一(a及an)」及該「the」以及類似指示物(尤其是在以下發明申請專利範圍之上下文中)應被解釋為包含單數及複數二者,除非在本文中另有說明或上下文明顯矛盾。用語「或」指「及/或」,除非在本文中另有說明或上下文明顯矛盾。除非另有說明,否則用語「包含」、「具有」、「包括」、「含有」應被解釋為開放式用語(即,指「包含,但不限於」)。「其組合」係为一開放用語,其包含所命名元件至少其中之一以及視需要一或多個未命名的類似元件。
除非本文中另有說明,否則對值之範圍的陳述僅旨在用作個別提及落於該範圍內的每一單獨值之一種速記法,並且每一單獨值如同在本文中被個別陳述般倂入說明書中。所有範圍之端點皆包含在範圍內並且可獨立地組合。本文所述之所有方法皆可以適當順序執行,除非在本文中另有說明或上下文明顯矛盾。使用任何及所有實例或實例性語言(例如,「例如」)僅旨在更佳地說明本發明,而不對本發明之範圍構成限制,除非另有要求。說明書中之任何語言皆不應被解釋為指示任何未請求保護之元件對如本文中所述之本發明之實踐至關重要。
儘管已參照實例性實施例描述了本發明,但熟習此項技術者將理解,可作出各種改變,並且可在不背離本發明之範圍之情況下以等效形式替代其元件。此外,在不背離本發明之本質範圍之情況下,可作出各種修改以使特定情況或材料適應本發明之教示內容。因此,旨在使本發明不限於作為實行本發明所設想之最佳模式而揭露之特定實施例,而是旨在使本發明包含落於隨附發明申請專利範圍之範圍內的所有實施例。本發明包含上述元件在其所有可能變化中之任何組合,除非在本文中另有說明或上下文明顯矛盾。

Claims (21)

  1. 一種晶粒取向之M型六方肥粒鐵,具有式 MeFe12 O19 , 以及一摻雜劑,該摻雜劑有效提供在一c平面中之平面磁各向異性及磁化或在六方結晶結構中之一錐面各向異性,其中Me係為Sr2+ 、Ba2+ 或Pb2+ ,且 其中該肥粒鐵之大於30%之晶粒沿晶體結構之垂直於該c平面之c軸對齊。
  2. 如請求項1所述之晶粒取向之M型六方肥粒鐵,其中該摻雜劑包含Co、Ti、Zr、Sn、Ir、Sc、In、Zn、Mg、Cu、Ni、Bi、Al、Ga、La或其組合。
  3. 如請求項1所述之晶粒取向之M型六方肥粒鐵,其中該摻雜劑包含Co2+ /Ti4+ 、Co2+ /Zr4+ 、Co2+ /Sn4+ 、Co2+ /Ir4+ 、Bi2+ /Co2+ /Ti4+ 、Bi2+ /Co2+ /Zr4+ 、Bi2+ /Co2+ /Sn4+ 或其組合。
  4. 如請求項1所述之晶粒取向之M型六方肥粒鐵,具有式Bix -Ba1-x (CoTi)y Fe12-2y O19 (x=0-0.8、y=0.5-1.5)、Ba (CoTi)x Fe12-2x O19 (x=0.5-1.5)、Ba (CoZr)x Fe12-2x O19 (x=0.5-1.5)、Ba(CoSn)x Fe12-2x O19 (x=0.5-1.5)、Ba(CoIr)x Fe12-2x O19 (x=0.5-1.5)、Bix Sr1-x (CoTi)y -Fe12-2y O19 (x=0-0.8、y=0.5-1.5)、Sr(CoTi)x Fe12-2x O19 (x=0.5-1.5)、Sr (CoZr)x Fe12-2x O19 (x=0.5-1.5)、Sr(CoSn)x Fe12-2x O19 (x=0.5-1.5)或Pb(CoTi)x Fe12-2x O19 (x=0.5-1.5)。
  5. 如請求項1所述之晶粒取向之M型六方肥粒鐵,具有式Bix Ba1-x (CoTi)y Fe12-2y O19 (x=0-0.8、y=0.5-1.5)、Ba (CoTi)x Fe12-2x O19 (x=0.5-1.5)、Ba (CoZr)x Fe12-2x O19 (x=0.5-1.5)或Ba(CoSn)x Fe12-2x O19 (x=0.5-1.5)。
  6. 如請求項1所述之晶粒取向之M型六方肥粒鐵,其中Me係由Sr部分替代Ba的Ba2+ ,且具有式(Bix Sry Ba1-x-y ) (CoTi)z Fe12-2z O19 (x=0-0.8、y=0-1、z=0.5-2.0)。
  7. 如請求項1所述之晶粒取向之M型六方肥粒鐵,其中該晶粒取向之M型六方肥粒鐵具有至少以下其中之一 在50 MHz至300 MHz之一操作頻率上大於50之一面內導磁率; 在100 MHz下小於0.5之一磁損耗正切; 在0至300 MHz上小於0.02之一介電損耗正切;或 在30至300 MHz上為10至30之一介電常數。
  8. 如請求項7所述之晶粒取向之M型六方肥粒鐵,其中該晶粒取向之M型六方肥粒鐵具有: 在30至300 MHz上小於0.2之一磁損耗正切;以及 在30至300 MHz上小於0.05之一介電損耗正切。
  9. 如請求項7所述之晶粒取向之M型六方肥粒鐵,其中該晶粒取向之M型六方肥粒鐵具有 在50至300 MHz之一操作頻率下大於80之一面內導磁率;以及 在100 MHz下小於0.2之一磁損耗正切。
  10. 如請求項1所述之晶粒取向之M型六方肥粒鐵,其中該六方肥粒鐵具有為一理論密度之至少85%之一燒結密度。
  11. 如請求項1所述之晶粒取向之M型六方肥粒鐵,其中在該c平面中的晶粒大小高達300微米。
  12. 一種物品,包含如請求項1所述之晶粒取向之M型六方肥粒鐵。
  13. 如請求項12所述之物品,其中該物品係為一電感器、一垂直磁紀錄、一天線、一微波吸收器、一電磁干擾抑制器或一屏蔽材料。
  14. 一種無線供電裝置或近場通訊裝置,包含如請求項13所述之屏蔽材料。
  15. 一種製造如請求項1所述之經摻雜的晶粒取向之M型六方肥粒鐵的方法,該方法包含: 製備複數個肥粒鐵晶粒,該等肥粒鐵晶粒具有式 MeFe12 O19 , 包含一摻雜劑,該摻雜劑有效提供在c平面中之平面磁各向異性及磁化、或一錐面各向異性,其中Me係為Sr2+ 、Ba2+ 或Pb2+ ; 對齊該等肥粒鐵晶粒,使得大於30%之該等肥粒鐵晶粒沿晶體結構之垂直於該c平面之c軸對齊,以提供該經摻雜的晶粒取向之M型六方肥粒鐵;以及 視需要在大於800℃之一溫度下對該經摻雜的晶粒取向之M型六方肥粒鐵進行燒結以提供密度為一理論密度之至少85%之一經燒結材料。
  16. 如請求項15所述之方法,其中該摻雜劑係藉由以CoTi、CoZr或CoSn替代一部分Fe而提供。
  17. 如請求項15所述之方法,其中製備單晶粒包含煅燒及燒結乾粉、一 溶膠-凝膠製程、一熔鹽製程、一共沉澱製程、一水熱製程、一溶膠凝膠水熱製程或其他化學合成製程。
  18. 如請求項15所述之方法,其中對齊該等晶粒包含在向該等晶粒施加垂直機械壓力的同時向該等晶粒施加一旋轉面內磁場、在施加或未施加一磁場之情況下向該等晶粒施加一機械剪切力或所述二者之一組合。
  19. 如請求項18所述之方法,其中對齊該等晶粒包含施加一旋轉面內磁場,該旋轉面內磁場具有強度大於2000奧斯特之一磁場。
  20. 如請求項15所述之方法,包含在對齊該等肥粒鐵晶粒期間,對該晶粒取向之M型六方肥粒鐵進行成型。
  21. 如請求項15所述之方法,包含在燒結之前將該晶粒取向之M型六方肥粒鐵切割成一指定尺寸。
TW108112958A 2018-04-12 2019-04-12 晶粒取向之m型六方肥粒鐵、其製造方法、包含該肥粒鐵之物品及無線供電裝置 TW201943676A (zh)

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